36 results about "Linear region" patented technology

The application discloses a gain-controllable power amplifier, a power amplifier structure and a multi-channel transmitter system. The amplifier adopts an amplification circuit of a Doherty architecture, and two DAC voltage control circuits are used to control the working states of two amplification branches of the amplification circuit to control the output power of the amplifier for different loads. The output power of the amplifier is determined by the output power of each amplification branch and the impedance matching of each amplification branch in a power synthesis circuit. Specifically, when the main and auxiliary amplification branches are controlled to be in a saturated output state, the output power is the highest; when the main and auxiliary amplification branches are controlled to be in a power back-off state, the output power is high; when the main and auxiliary amplification branches are controlled to be in a power back-off state and a linear region state respectively, the output power is medium; when the main and auxiliary amplification branches are controlled to be in a linear region state and a closed state respectively, the output power is low; and when the main and auxiliary amplification branches are controlled to be in a closed state, there is no output power. Therefore, the output power of the amplifier can match different loads.

The application relates to the technical field of electric machines, and particularly discloses an electric machine driving and control anti-interference method and system based on an isolator, which can accurately perceive the space-time distribution characteristics of the ground potential difference by constructing a global potential difference dynamic matrix in real time and calculating the common-mode voltage drift amount; based on this, the system no longer maintains the fixed working state of the isolator, but iteratively optimizes the bias current and the gain coefficient of the photoelectric isolator according to the real-time common-mode voltage drift amount, and dynamically reconstructs the transmission parameters; so that the isolator always works in the optimal linear region, effectively avoids signal saturation or cutoff distortion caused by ground potential difference fluctuation, and fundamentally solves the problem that the fixed working point cannot adapt to dynamic common-mode interference.

The invention discloses a gradient coil design method and system for a rotary surface. The method comprises the following steps: providing a wiring surface required by a gradient coil to be designed and the structure and size of a target area; representing a bus on the wiring surface in a parameter equation form; representing a flow function of the current as series expansion located on the wiring surface; setting a to-be-solved target field and an allowable error, wherein the target field of the linear region is set based on the coefficient of the magnetic field spherical harmonic wave; establishing a spherical harmonic magnetic field sensitivity matrix and a power consumption matrix based on the stream function and the target area; establishing an optimization problem by taking coil power consumption as an optimization objective function and target field deviation as a constraint, and solving the optimization problem to obtain stream function distribution; and discretization is carried out based on stream function distribution to obtain coil wiring characteristics. The method can be suitable for the design of the gradient coil on the complex curved surface only by using a small number of variables, greatly improves the calculation and parameter optimization efficiency of the coil, and facilitates the reduction of the discomfort of a matrix.

This invention discloses a radio frequency millimeter-wave phase-to-voltage converter, belonging to the field of radio frequency microwave integrated circuit technology. The converter includes: a first and second frequency divider chain for dividing two input signals to achieve phase compression; a first and second quadrature generator for providing a -90° linearized bias; a three-state coupling network connected between the two frequency divider chains to eliminate phase mode ambiguity introduced by the frequency dividers through reconfigurable coupled phase; and a symmetrical phase detector for converting the linearized phase difference into a voltage signal output. This invention compresses the ±180° phase difference to a small angle range using phase compression technology, combined with linearized bias to allow the phase detector to operate in the linear region, and utilizes the three-state coupling network to achieve unambiguous detection across the entire 360° phase range. Implemented using a 40nm CMOS process, it requires no external clock, has no inductor design, a core area of ​​only 0.016mm², power consumption of 22mW, a response speed of 120ns, and a linearity of 1.05% FSR.

The invention relates to the technical field of aeronautical communication systems, and discloses a temperature compensation method based on a radio frequency transceiver circuit in a wide-temperature environment, which comprises the following steps: estimating the maximum gain change caused by the wide-temperature change of a transceiver channel amplifier; obtaining the resistance value of the second resistor under the wide-temperature condition; fixed resistors are connected in parallel to the two ends of the thermistor in the attenuator to obtain a temperature compensation attenuator circuit, and the temperature compensation attenuator circuit is optimized; engineering testing and iterative optimization of the temperature compensation attenuator circuit are executed until the receiving gain index is met; and integrating the insertion loss of each level of device to enable the amplifier to work under a preset gain so as to ensure that a signal works in a linear region and complete the temperature compensation of the radio frequency transceiver circuit. The system is simple in structure, high in reliability, small in size, low in power consumption, low in cost, small in test data amount, simple in control process, easy to operate and easy to integrate, and is not only suitable for communication of a common airborne platform, but also suitable for communication of a miniaturized, low-power-consumption and high-consumption type unmanned aerial vehicle or missile-borne platform.

The invention discloses a linear AMR sensor for Z-direction magnetic field detection. The technical problems that an AMR sensor cannot distinguish the Z-direction magnetic field direction and is poor in linearity are mainly solved. The ferromagnetic layer is in a magnetic vortex state without external magnetic field interference, and the conducting layers are correspondingly arranged on the two sides of the ferromagnetic layer. The conductive layer comprises a conductive column arranged in the center of any side of the ferromagnetic layer and at least one conductive ring which is concentric with the conductive column and is sequentially arranged on the two sides of the ferromagnetic layer in a staggered mode. According to the Z-direction magnetic field detection linear AMR sensor, the conductive columns and the corresponding guide rings are concentrically arranged on the two sides of the ferromagnetic layer, so that the direction of current in the ferromagnetic layer can be changed, the sensor works in a linear area, the linear characteristic of sensor output is achieved, and the detection precision is improved. And meanwhile, the sensor shows different resistance values when the external Z-direction magnetic field intensity is the same and the directions are different, so that effective distinguishing of the Z-direction magnetic field directions is realized.

The application provides a MOSFET reliability model parameter extraction method based on an OMI mode, comprising the following steps: for threshold opening voltage Vtlin, a first LifeTime model is adopted for characterization; for linear region drain current Idlin, a second LifeTime model is adopted for characterization; for saturation region drain current Idsat, a third LifeTime model is adopted for characterization, and model parameters needing data fitting in the three LifeTime models are different. According to the application, the electrical indicators of different working states of the MOSFET can be accurately fitted, so that the model precision is greatly improved.

This application discloses a supercapacitor measurement method and system, relating to the field of supercapacitor testing technology. The method employs segmented discharge combined with dynamic threshold determination. First, a large current is rapidly passed through the nonlinear region. Then, the effective measurement range is adjusted in real time based on temperature, discharge current, and internal resistance. Finally, a small current is switched to complete high-precision sampling. Therefore, this method solves the technical problems of traditional measurement methods, such as susceptibility to operating condition fluctuations, inaccurate linear region determination, large nonlinear region errors, and poor measurement consistency. It achieves high measurement accuracy, strong adaptability, stable and reliable results, and faster detection speed.

The application discloses an automatic gain control circuit of a trans-impedance amplifier, comprising a basic TIA circuit, an NMOS tube Q4, a voltage clamping module and a gain control module; the basic TIA circuit comprises NMOS tubes Q1, Q2 and Q3, resistors R1, R2, R3 and R4 and a capacitor C1; the source end of the NMOS tube Q4 is connected with the drain end of the NMOS tube Q2, and the drain end thereof is connected with the gate end of the NMOS tube Q1; the voltage clamping module is used for clamping the drain-source voltage of the NMOS tube Q4 at a fixed value, so that the NMOS tube Q4 works in a linear region; the gain control module is used for adjusting the gate end voltage of the NMOS tube Q4 according to the change of input optical power, so as to change the equivalent linear resistance of the NMOS tube Q4, realize continuous adjustment of the trans-impedance gain and elimination of direct current offset. The application introduces the NMOS tube Q4 working in the linear region, innovatively multiplexes the direct current offset circuit into the automatic gain control circuit, realizes continuous adjustment of the trans-impedance gain, reduces the parasitic capacitance introduced by the AGC circuit and optimizes the AGC circuit with continuous adjustable gain, so that the problem of difficult adjustment of a damping factor caused by the traditional gain continuous adjustable AGC circuit is solved.

The invention discloses a zinc-bromine flow battery SOC efficient evaluation method suitable for voltage / current sampling distortion and missing working conditions, and the method comprises the following steps: 1, building a battery output voltage / current sampling distortion and missing working condition evaluation mechanism based on distortion rate real-time evaluation, and deducing a corresponding high-precision equivalent circuit evaluation model; 2, voltage and current sample variable parameters required by identification and a target identification function are defined, and a tester is used for carrying out 24-hour real-time monitoring on an experiment platform to obtain a curve of SOC, battery voltage and current data changing along with discharge time; 3, preprocessing the sampling data, dividing the sampling data of the redox flow battery into a linear region and a nonlinear region, and highlighting partition processing of output voltage, current and SOC sampling data of the battery; and 4, inputting the processed data into the CNN-LSTM neural network model to carry out SOC estimation. According to the method, the SOC calculation precision of the ZBFB in the nonlinear discharge region can be effectively improved.

The application relates to the technical field of electric machines, and particularly discloses an electric machine driving and control anti-interference method and system based on an optoelectronic isolator, which can accurately perceive the space-time distribution characteristics of the ground potential difference by constructing a global potential difference dynamic matrix in real time and calculating the common-mode voltage drift amount; based on this, the system no longer maintains the fixed working state of the optoelectronic isolator, but iteratively optimizes the bias current and the gain coefficient of the optoelectronic isolator according to the real-time common-mode voltage drift amount, and dynamically reconstructs the transmission parameters; so that the optoelectronic isolator always works in the optimal linear region, effectively avoids signal saturation or cutoff distortion caused by ground potential difference fluctuation, and fundamentally solves the problem that the fixed working point cannot adapt to dynamic common-mode interference.

The present disclosure relates to a method for starting a phase-locked loop and a corresponding integrated circuit. In a start-up sequence of the phase-locked loop, a voltage-controlled oscillator is operated in a linear region by a first voltage, and a first count of a register of a frequency divider is read. Then, the voltage-controlled oscillator is controlled by a second voltage having a second voltage offset from the first voltage, and a second count of the register is read. A slope of the linear region is then determined from a difference between the first and second counts and the offset of the first and second voltages. A determination of a third voltage required to reach a target frequency of an output signal is made in dependence on the slope and a deviation between a current value of the register count and a target value corresponding to the target frequency. The voltage-controlled oscillator is then controlled with the third voltage.

To provide a semiconductor device capable of improving breakdown voltage characteristics.SOLUTION: A first potential region (11) including a drain region (14) extending in a first direction (Y), a second potential region (12) surrounding the first potential region, and a drift region, a field insulating film covering the drift region, and a field resistance film provided on the field insulating film, wherein the first potential region is continuously connected to a first linear region (111) and a first end portion (111a) of the first linear region, and an end portion region (112A) having a curved first outer edge (1121), the second end portion (11a) of the first potential region is located on the first outer edge, and a length (14a) between the third end portion (d2) and the second end portion of the drain region is shorter than a length (d1) between the drain region and the second outer edge (111c) of the first linear region in the second direction (X).SELECTED DRAWING: Figure 7

The invention discloses a method for speculating a duty ratio-flow characteristic based on a duty ratio-frequency response characteristic of a high-speed switch valve, and belongs to the technical field of high-speed switch valves. The method comprises the following steps: firstly, acquiring a duty ratio-frequency response characteristic curve of the high-speed switching valve in a target driving mode, extracting corresponding controllable duty ratio upper and lower limits under different working frequencies based on the curve, and determining a linear region range of the duty ratio-flow characteristic curve according to a duty ratio range determined by the upper and lower limits; furthermore, actual flow data at two end points in the range are detected, and a linear flow prediction straight line under the frequency is obtained through fitting, so that a linear region of a complete duty ratio-flow characteristic curve can be rapidly predicted without point-by-point detection. According to the method, only one duty ratio-frequency response characteristic curve needs to be obtained, the flow linear regions under all the working frequencies can be predicted, the duty ratio-flow characteristic detection efficiency is remarkably improved, and the problems that a traditional method is long in detection time consumption and low in precision are solved.

The invention discloses a semiconductor device, and the semiconductor device comprises a semiconductor main body which is provided with a first groove and a second groove; a first conductive structure and a second conductive structure; wherein the top of the first conductive structure is a first area exposed out of the semiconductor main body, the top of the second conductive structure is a second area exposed out of the semiconductor main body, the first area is defined by a plurality of first linear areas and a plurality of first corner areas, and the second area is defined by a plurality of second linear areas and a plurality of second corner areas. The second area is defined by a plurality of second linear areas and a plurality of second corner areas, and the distance between the outer side edge of each second corner area and the first corner area is gradually increased from the middle to the two sides. By optimizing the layout of the semiconductor device, the effective utilization area of the surface of the device can be increased, the stress and the breakdown voltage at the corner of the device can be improved, the method can be compatible with the existing semiconductor groove process, and the risk of device failure caused by photoresist falling in the process is avoided.

The invention provides a VSG transient stability discrimination method and system based on trajectory sensitivity. The method comprises the following steps: constructing a VSG trajectory sensitivity model; determining a transient stability index of the VSG based on the VSG trajectory sensitivity model; in the linear region of the critical value of the stability boundary of the system, two different parameter values are taken, and transient stability indexes, corresponding to the two different parameter values, of the VSG are calculated; obtaining a system parameter critical value according to the transient stability indexes of the VSG corresponding to the two different parameter values; and if the parameter reaches the critical value, the transient instability phenomenon occurs in the system, and the VSG transient stability is judged. And the design of related control strategies and electrical parameters of the VSG grid-connected system is guided.

The invention relates to a vertical magneto-sensitive TMR sensor with a continuously adjustable linear region, belongs to the technical field of magnetic sensors, and solves the problems that a vertical magnetic field is difficult to measure and the linear region of the same sensor cannot be regulated and controlled in the prior art. The sensor comprises a Si substrate, a piezoelectric film layer, an electrode layer, a seed layer, a vertical magnetic free layer, a tunneling barrier layer, a vertical magnetic fixed layer and a protective layer from bottom to top, and the vertical magnetic free layer sequentially comprises a first magnetic material layer, a first ultrathin metal layer and a second magnetic material layer from bottom to top. And the vertical magnetic fixed layer comprises a ferromagnetic layer, a second ultrathin metal layer and an antiferromagnetic coupling layer from bottom to top. According to the sensor, the vertical magnetic anisotropy of the vertical magnetic free layer of the vertical magneto-sensitive TMR sensor is regulated and controlled by utilizing the stress generated by the piezoelectric material, continuous regulation and control in a linear range can be realized, the application scene of the sensor is remarkably expanded, and the preparation process is good in compatibility, convenient to package, low in cost and suitable for large-scale mass production.

The invention provides a storage unit erasing method and device, electronic equipment and a storage medium, and relates to the technical field of storage, and the method comprises the following steps: obtaining an erasing operation curve of a storage unit; and according to the erasing operation curve, determining the minimum operation time required for enabling the threshold voltage change of the storage unit to enter the linear region. Initial erasing voltage is applied to the storage unit, and the operation time of the initial erasing voltage is not less than the minimum operation time, so that the threshold voltage change of the storage unit enters a linear region. And after the storage unit is in the linear region, continuously applying a plurality of step-increasing erasing voltage pulses to the storage unit, and enabling the operation time of each erasing voltage pulse to be not less than the minimum operation time until the threshold voltage of the storage unit reaches the target threshold voltage. According to the storage unit erasing method provided by the invention, the erasing speed and reliability of the storage unit can be effectively improved.

This invention discloses a packaging inspection method and system based on high dynamic range 3D imaging, relating to the field of semiconductor packaging inspection technology. The method includes: acquiring multi-exposure images of the packaged device surface; pre-classifying the point cloud into metal pads, molding compounds, and pin regions based on the curvature coefficient of the saturation region and the dynamic range width of the linear region of the brightness response curve; calculating the normal vector dispersion index to extract complete point cloud layers for each material; constructing a weighted spatial transformation error function using this index as dynamic weights, and fusing multiple point clouds into a high-density complete point cloud; calculating a weighted fusion value of the local surface curvature change rate and depth gradient modulus, matching it with defect feature intervals to identify cold solder joints, warpage, and cracks, and outputting their locations; calculating a dynamic threshold based on the fusion value and the normal vector dispersion index, outputting a pass / fail conclusion, and generating an inspection report. This invention significantly improves the defect detection accuracy and reliability of complex surface packaging by adaptively adjusting parameters.

The invention discloses a high-precision fractional memory polynomial digital predistortion method and device, and the method comprises the steps: carrying out the synchronous sampling of an input signal of a predistorter and an output signal of a power amplifier, and obtaining a sampling sequence; substituting the sampling sequence into a pre-constructed fractional memory polynomial power amplifier expression, deriving a fractional memory polynomial power amplifier coefficient by adopting a least square theory, and solving by adopting characteristic decomposition; the fractional memory polynomial power amplification coefficient is subjected to predistortion compensation through an adaptive learning device; according to the fractional memory polynomial power amplifier model provided by the invention, the characteristics of a linear region and a saturation region of the power amplifier are fitted at the same time, and a good linearization effect on the power amplifier is achieved; the fractional memory polynomial power amplifier model can directly solve a numerator and denominator combination coefficient by using a characteristic decomposition theory, and can update a fractional polynomial power amplifier coefficient in real time on orbit.

The application belongs to the technical field of motor modeling, and discloses a fractional order modeling and identification method of a motor driving system and application thereof, which comprises the following steps: (1) a fractional order transfer function model of an electromagnetic link of a PMSM servo system is established; meanwhile, a nonlinear sigmoid function model of an inverter is established, and unknown parameters of the sigmoid function model are confirmed; the nonlinear of the inverter is preliminarily compensated based on the sigmoid function model, so that a new sigmoid function model is obtained, and parameters in the new sigmoid function model are confirmed; (2) a linear region of d-q axis voltage and current is obtained based on the obtained sigmoid function model, current sampling of the d-q axis is carried out in the obtained linear region, and unknown parameters in the fractional order transfer function model are calculated based on the obtained sampling data. The application simultaneously considers the dead zone nonlinearity of the inverter and the system delay existing in the digital system, and the accuracy is improved.

This invention relates to the field of aviation communication system technology and discloses a temperature compensation method for radio frequency transceiver circuits under wide temperature conditions. The method includes estimating the maximum gain change caused by wide temperature variations in the transmit / receive channel amplifier; obtaining the resistance value of a second resistor under wide temperature conditions; connecting a fixed resistor in parallel across the thermistor in the attenuator to obtain a temperature-compensated attenuator circuit, and optimizing the temperature-compensated attenuator circuit; performing engineering testing and iterative optimization of the temperature-compensated attenuator circuit until the receive gain target is met; and considering the insertion loss of each stage of the components to ensure the amplifier operates at a preset gain, thereby ensuring the signal operates in the linear region and completing the temperature compensation of the radio frequency transceiver circuit. This invention features a simple structure, high reliability, small size, low power consumption, low cost, small test data volume, simple and easy-to-operate control process, and easy integration. It is suitable not only for ordinary airborne platform communication but also for miniaturized, low-power, high-consumption UAVs or missile-borne platform communication.

The application discloses a kind of transient dose rate radiation effect TCAD model calibration method and system, the method steps include: step S1: the initial TCAD model of transistor is constructed;Step S2: extracting the electrical characteristic parameter under standard model;Step S3: the parameter in model is adjusted in turn, the linear region transfer characteristic curve of transistor is simulated;Step S4: the saturation region transfer characteristic curve of transistor is simulated, and the source / drain contact resistance parameter in model is adjusted;Step S5: the output characteristic curve of transistor is simulated, and the saturation velocity and high field mobility degradation parameter in model are adjusted;Step S6: according to calibration model information, simulation is carried out, and the distribution data and concentration of electron hole pair are obtained;Step S7: the connection mode of transistor is adjusted in model parameter, to simulate the process that transient radiation acts on the transistor without applying bias voltage.The application has the advantages of simple implementation method, low cost, calibration precision and efficiency etc..

The application belongs to the technical field of analog integrated circuits, and discloses a high-linearity switching circuit and a control method thereof.The circuit comprises a voltage-boosting circuit, a battery voltage monitoring module, a comparator, a control module and a cross-coupled circuit, the power supply voltage is monitored, and the charge pump is started to boost when the voltage is lower than a preset value, so that a stable gate control voltage is provided for the switching tube, and the linearity of the switching tube working in a deep linear region is ensured;an intermittent monitoring and fast output voltage establishment mechanism is adopted, so that the system power consumption is significantly reduced, the battery life is prolonged, and the application is suitable for long-term working measurement systems such as sensors, flow meters and the like.The application has the advantages of high linearity, low power consumption, fast response speed and the like.

The application provides a power control method and device based on a peak detection circuit, equipment and a medium. The method comprises: obtaining a coupling signal of a power amplifier output end through a coupler; performing power detection on the coupling signal by using a peak detection circuit to obtain a correlation curve of the input power and the output voltage of the peak detection circuit; identifying a linear interval and a nonlinear interval of the correlation curve; performing a first curve fitting on the linear interval, and performing a second curve fitting on the nonlinear interval; and determining a power control signal for the input end of the power amplifier according to the first curve fitting result and the second curve fitting result. The scheme can provide a three-section curve fitting method, different function fittings are used in the linear region and the nonlinear region according to the characteristics of the power amplifier and the detection circuit, a low-cost peak detection circuit is used, and the normalization of different signal bandwidths is completed by using a bandwidth compensation method.

The invention relates to the technical field of gas photoelectric detection, and particularly discloses a dual-channel gain adaptive photoelectric detection and processing method for gas detection, and the method comprises the following steps: collecting a reference channel voltage signal and a measurement channel voltage signal outputted by a photoelectric detection module; and executing a linear response judgment step, namely judging whether the real-time amplitude of the voltage signal of the measurement channel is within a preset linear response interval or not. Whether the signal amplitude of the measurement channel deviates from the linear response interval or not is monitored in real time, and the amplification factor is adaptively adjusted by adopting a progressive strategy, so that the signal is always in the optimal working linear area of the detector no matter under extremely low concentration or high concentration, and the problems that a small signal is submerged and a large signal is saturated are effectively solved.

Embodiments of the present application relate to the field of signal processing, and disclose a method for reducing peak-to-average ratio of Wi-Fi signal, an electronic device and a storage medium, wherein the method comprises: interpolating a to-be-transmitted Wi-Fi signal to expand the out-of-band signal bandwidth of the Wi-Fi signal and increase the sampling frequency; adding noise in the out-of-band signal of the Wi-Fi signal after the bandwidth is expanded, and the Wi-Fi signal after the noise is added meets the preset spectrum template requirement. The scheme can reduce the peak-to-average ratio of the Wi-Fi signal, so that the power amplifier works better in the linear region and is not easy to enter the saturation state, thereby avoiding possible signal peak distortion, reducing the increase of signal spectrum expansion, energy leakage and out-of-band interference.

An apparatus for a drive for an externally excited synchronous machine. The apparatus sets a value for a stator flux linkage reference so as to enable operation in a linear region of a d-axis magnetizing inductance without saturation. The apparatus causes the drive to drive the externally excited synchronous machine with a speed within a linear modulation range using said value. During the driving, the apparatus adjusts a rotor excitation current reference to determine a minimum-load value of a rotor excitation current and causes increasing or decreasing of the rotor excitation current until a stator current is within a pre-defined range. Then, the apparatus determines operating values for the stator and rotor excitation currents and calculates a rotor-to-stator reduction factor based on the minimum-load and operating values of the rotor excitation current, the operating value of the stator current and the value for the stator flux linkage reference.

The application discloses an analog fast automatic gain control circuit for a transimpedance amplifier, and belongs to the field of optical communication transimpedance amplifiers. The technical scheme introduces a gain compensation unit in a feedback loop, and comprises an operational amplifier A2, a resistor R2, a MOS tube M1, a MOS tube M2, a resistor R1, a current source, a MOS tube M3, a resistor R3, and a capacitor C2. When the MOS tube M1 works in a linear region, the equivalent resistance is reduced, and the source stage negative feedback circuit cooperates to compensate for the transconductance reduction of the controlled gain adjustment element, so that the open loop gain of the automatic gain control loop is maintained stable. The scheme solves the problem that the response time of the traditional analog automatic gain control is inconsistent when the input signal amplitude changes, realizes consistent loop response time under different input amplitudes, significantly improves the upper limit of the circuit response speed design, avoids the defect that the output amplitude suddenly changes when the digital gain control scheme is switched, and ensures the output stability and high-speed performance.

The invention belongs to the technical field of semiconductor manufacturing, and provides a plasma power supply pulse control method and device, and the method comprises the steps: carrying out the remapping of a benchmark reference waveform when a pulse parameter changes, and generating a new reference waveform; and the iterative learning device is updated in parallel independently in each time period, and the optimal adaptive learning gain and the update control quantity are determined. According to the method, a single pulse period is decomposed into a plurality of time periods, and through combination of iterative learning control and an annealing algorithm, gain and learning weight are controlled in a time-segmented differentiation manner, so that precise compensation of a nonlinear region is realized; independent parallel iterative learning is carried out in each time period, so that rising / falling edge overshoot-free, flat-top period rapid convergence and extremely low fluctuation are finally realized, and high-precision and high-consistency tracking of a full-period waveform is realized; the time duty ratio (DC%) of each stage is finely adjusted or the power gain is modulated into a multi-stage pulse, so that the free radical density and the ion bombardment intensity can be independently controlled, and accurate control on the plasma in the etching process is realized.