55 results about "Linear region" patented technology

The utility model relates to the technical field of radio frequency and microwave, in particular to a linearization circuit of a power amplifier, which comprises the power amplifier used for amplifying an input signal and providing required output power; the bias circuit is used for providing bias voltage for the power amplifier and controlling the change characteristic of a quiescent operating point of the power amplifier along with the temperature and the power; the active feedback circuit comprises a first connection point P1, a second connection point P2 and a third connection point P3, the active feedback circuit effectively reduces nonlinear distortion of the power amplifier through a negative feedback mechanism, and the nonlinear distortion of the power amplifier is effectively reduced by adjusting a first resistor R5, a second resistor R4, a third resistor R1 and a fourth resistor R3. The feedback circuit can be controlled to work in a critical region of a saturation region and a linear region, so that the linearity of the power amplifier can be optimized.

The invention discloses a voltage source type disturbance generation method and system based on disturbance sequence linear interval fitting, and the method comprises the steps: obtaining different types of voltage amplitude disturbance or frequency amplitude disturbance, and constructing a time-disturbance value sequence corresponding to each type of voltage amplitude disturbance or frequency amplitude disturbance; dividing each time-disturbance value sequence according to the size of a specified interval to obtain time sequences and disturbance value sequences of different intervals, and constructing the time sequences and disturbance value sequences of different intervals into corresponding parameter blocks; traversing the parameter blocks of different voltage amplitude perturbations or frequency amplitude perturbations to perform linear region fitting of the perturbation values, constructing voltage source type perturbation according to the fitting result of the perturbation values, and then selecting the phase and the perturbation type of the voltage source type perturbation to obtain final voltage source perturbation and outputting the final voltage source perturbation. According to the invention, the generation of multi-type voltage and frequency disturbance is realized under a unified framework, and the integrity of a test scene and the test efficiency are remarkably improved.

The application discloses a gain-controllable power amplifier, a power amplifier structure and a multi-channel transmitter system. The amplifier adopts an amplification circuit of a Doherty architecture, and two DAC voltage control circuits are used to control the working states of two amplification branches of the amplification circuit to control the output power of the amplifier for different loads. The output power of the amplifier is determined by the output power of each amplification branch and the impedance matching of each amplification branch in a power synthesis circuit. Specifically, when the main and auxiliary amplification branches are controlled to be in a saturated output state, the output power is the highest; when the main and auxiliary amplification branches are controlled to be in a power back-off state, the output power is high; when the main and auxiliary amplification branches are controlled to be in a power back-off state and a linear region state respectively, the output power is medium; when the main and auxiliary amplification branches are controlled to be in a linear region state and a closed state respectively, the output power is low; and when the main and auxiliary amplification branches are controlled to be in a closed state, there is no output power. Therefore, the output power of the amplifier can match different loads.

The application relates to the technical field of electric machines, and particularly discloses an electric machine driving and control anti-interference method and system based on an isolator, which can accurately perceive the space-time distribution characteristics of the ground potential difference by constructing a global potential difference dynamic matrix in real time and calculating the common-mode voltage drift amount; based on this, the system no longer maintains the fixed working state of the isolator, but iteratively optimizes the bias current and the gain coefficient of the photoelectric isolator according to the real-time common-mode voltage drift amount, and dynamically reconstructs the transmission parameters; so that the isolator always works in the optimal linear region, effectively avoids signal saturation or cutoff distortion caused by ground potential difference fluctuation, and fundamentally solves the problem that the fixed working point cannot adapt to dynamic common-mode interference.

The invention discloses a gradient coil design method and system for a rotary surface. The method comprises the following steps: providing a wiring surface required by a gradient coil to be designed and the structure and size of a target area; representing a bus on the wiring surface in a parameter equation form; representing a flow function of the current as series expansion located on the wiring surface; setting a to-be-solved target field and an allowable error, wherein the target field of the linear region is set based on the coefficient of the magnetic field spherical harmonic wave; establishing a spherical harmonic magnetic field sensitivity matrix and a power consumption matrix based on the stream function and the target area; establishing an optimization problem by taking coil power consumption as an optimization objective function and target field deviation as a constraint, and solving the optimization problem to obtain stream function distribution; and discretization is carried out based on stream function distribution to obtain coil wiring characteristics. The method can be suitable for the design of the gradient coil on the complex curved surface only by using a small number of variables, greatly improves the calculation and parameter optimization efficiency of the coil, and facilitates the reduction of the discomfort of a matrix.

This invention discloses a radio frequency millimeter-wave phase-to-voltage converter, belonging to the field of radio frequency microwave integrated circuit technology. The converter includes: a first and second frequency divider chain for dividing two input signals to achieve phase compression; a first and second quadrature generator for providing a -90° linearized bias; a three-state coupling network connected between the two frequency divider chains to eliminate phase mode ambiguity introduced by the frequency dividers through reconfigurable coupled phase; and a symmetrical phase detector for converting the linearized phase difference into a voltage signal output. This invention compresses the ±180° phase difference to a small angle range using phase compression technology, combined with linearized bias to allow the phase detector to operate in the linear region, and utilizes the three-state coupling network to achieve unambiguous detection across the entire 360° phase range. Implemented using a 40nm CMOS process, it requires no external clock, has no inductor design, a core area of ​​only 0.016mm², power consumption of 22mW, a response speed of 120ns, and a linearity of 1.05% FSR.

The present disclosure provides a method for detecting channel mobility and photolithography variation of a MOS device, comprising: preparing a first MOS device and a second MOS device; obtaining a difference ΔR1 between the on-resistance R1 of a linear region of the first MOS device and the on-resistance R2 of a linear region of the second MOS device; obtaining M1 based on the number and unit length of first gate trenches and the width of the first gate trenches; and plotting a curve of ΔR1 and M1 to determine the slope K2 and intercept r of the curve. s M2 is obtained based on the capacitance per unit area of ​​the gate electrode contact, the voltage applied at the gate electrode contact point, and the threshold voltage of the first MOS device / second MOS device with the N-drift layer as the channel. The accumulation channel mobility of the MOS device is obtained using K2 and M2. This disclosure effectively avoids the influence of processes such as photolithography and etching on the accuracy of the extracted channel mobility, enriching the detection methods for the channel mobility of MOS devices.

The invention discloses an analog fast automatic gain control circuit for a transimpedance amplifier, which belongs to the field of optical communication transimpedance amplifiers, and adopts the technical scheme that a gain compensation unit is introduced into a feedback loop, the analog fast automatic gain control circuit comprises an operational amplifier A2, a resistor R2, an MOS (Metal Oxide Semiconductor) tube M1, an MOS tube M2, a resistor R1, a current source, an MOS tube M3, a resistor R3 and a capacitor C2, the equivalent resistance of the MOS tube M1 is reduced when the MOS tube M1 works in a linear region, and the equivalent resistance of the MOS tube M2 is reduced when the MOS tube M2 works in a linear region; under the synergistic effect of the source negative feedback circuit, the transconductance reduction of the controlled gain adjusting element is compensated, so that the open-loop gain stability of an automatic gain control loop is maintained; according to the scheme, the problem that the response time is inconsistent when the amplitude of the input signal is changed in the traditional analog automatic gain control is solved, the loop response time is consistent under different input amplitudes, the design upper limit of the circuit response speed is remarkably improved, meanwhile, the defect that the output amplitude is suddenly changed when a digital gain control scheme is switched is avoided, and the circuit reliability is improved. And the output stability and the high-speed performance are ensured.

The invention provides a control method and device of a double-pulse testing device, a testing system and a storage medium, and relates to the technical field of electronic device testing. The method comprises the following steps: sending a first pulse to a to-be-tested IGBT device; the first pulse is used for controlling the to-be-tested IGBT device to be turned off after saturation conduction; continuously sending a plurality of second pulses to the to-be-measured IGBT device until the device temperature of the to-be-measured IGBT device rises to the target temperature, and measuring the switching characteristic of the to-be-measured IGBT device at the target temperature; wherein the pulse width of the second pulse is smaller than that of the first pulse, and the to-be-tested IGBT device works in a linear region within the duration of the pulse width of the second pulse. According to the invention, the performance test of the IGBT device in the high-temperature state can be realized by using the double-pulse test device.

The invention relates to the technical field of aeronautical communication systems, and discloses a temperature compensation method based on a radio frequency transceiver circuit in a wide-temperature environment, which comprises the following steps: estimating the maximum gain change caused by the wide-temperature change of a transceiver channel amplifier; obtaining the resistance value of the second resistor under the wide-temperature condition; fixed resistors are connected in parallel to the two ends of the thermistor in the attenuator to obtain a temperature compensation attenuator circuit, and the temperature compensation attenuator circuit is optimized; engineering testing and iterative optimization of the temperature compensation attenuator circuit are executed until the receiving gain index is met; and integrating the insertion loss of each level of device to enable the amplifier to work under a preset gain so as to ensure that a signal works in a linear region and complete the temperature compensation of the radio frequency transceiver circuit. The system is simple in structure, high in reliability, small in size, low in power consumption, low in cost, small in test data amount, simple in control process, easy to operate and easy to integrate, and is not only suitable for communication of a common airborne platform, but also suitable for communication of a miniaturized, low-power-consumption and high-consumption type unmanned aerial vehicle or missile-borne platform.

Embodiments of this disclosure relate to sub-device field-effect transistor architectures for integrated circuits. This disclosure describes various aspects of sub-device field-effect transistor architectures for integrated circuits. In some aspects, an integrated field-effect transistor (FET) is implemented using multiple FET sub-devices. During operation, the source-side FET sub-devices of the integrated FET can operate in a linear region rather than a saturation region. Operating in the linear region, the source-side FET sub-devices of the integrated FET can exhibit lower threshold voltage or current sensitivity than other drain-side FET sub-devices operating in saturation. The device layout of the integrated FET can be designed such that less sensitive source-side FET sub-devices surround or protect other more sensitive drain-side sub-devices from random variations or density issues at the edges of the device layout. By doing so, the threshold voltage or current sensitivity of the integrated FET can be reduced, thereby improving the matching between the integrated FET devices.

The invention discloses a linear AMR sensor for Z-direction magnetic field detection. The technical problems that an AMR sensor cannot distinguish the Z-direction magnetic field direction and is poor in linearity are mainly solved. The ferromagnetic layer is in a magnetic vortex state without external magnetic field interference, and the conducting layers are correspondingly arranged on the two sides of the ferromagnetic layer. The conductive layer comprises a conductive column arranged in the center of any side of the ferromagnetic layer and at least one conductive ring which is concentric with the conductive column and is sequentially arranged on the two sides of the ferromagnetic layer in a staggered mode. According to the Z-direction magnetic field detection linear AMR sensor, the conductive columns and the corresponding guide rings are concentrically arranged on the two sides of the ferromagnetic layer, so that the direction of current in the ferromagnetic layer can be changed, the sensor works in a linear area, the linear characteristic of sensor output is achieved, and the detection precision is improved. And meanwhile, the sensor shows different resistance values when the external Z-direction magnetic field intensity is the same and the directions are different, so that effective distinguishing of the Z-direction magnetic field directions is realized.

The application provides a MOSFET reliability model parameter extraction method based on an OMI mode, comprising the following steps: for threshold opening voltage Vtlin, a first LifeTime model is adopted for characterization; for linear region drain current Idlin, a second LifeTime model is adopted for characterization; for saturation region drain current Idsat, a third LifeTime model is adopted for characterization, and model parameters needing data fitting in the three LifeTime models are different. According to the application, the electrical indicators of different working states of the MOSFET can be accurately fitted, so that the model precision is greatly improved.

The invention discloses a current transformer saturation identification method using a difference current cross-interval alternating characteristic. The method comprises the following steps: collecting current data; differential current is calculated, and whether differential protection is started or not is determined; calculating an accumulated difference charge quantity, and determining whether the accumulated difference charge quantity meets a linear region criterion; and detecting whether the differential current meets a saturation region criterion or not, and opening differential protection or locking. According to the current transformer saturation identification method based on the difference current cross-interval alternating characteristic, firstly, a traditional amplitude threshold value is replaced with integral quantization during difference charge quantity analysis, and the current transformer saturation recovery characteristic is better met; the sliding window integration can restrain high-frequency noise, and the integration process is equivalent to low-pass filtering; and thirdly, an alternating characteristic verification mechanism of linear region triggering and saturation region tracking is introduced, so that the problem of misoperation locking can be solved, timely locking protection can be carried out along with a saturation region after a linear region during external saturation, and misoperation locking can be avoided due to a non-saturation region after low current during internal faults.

The invention belongs to the technical field of analog integrated circuits, and discloses a high-linearity switching circuit and a control method thereof.The circuit comprises a booster circuit, a battery voltage monitoring module, a comparator, a control module and a cross coupling circuit, the voltage of a power source is monitored, and a charge pump is started to boost the voltage when the voltage is lower than a preset value; stable grid control voltage is provided for the switching tube, and the working linearity of the switching tube in a deep linear region is ensured; intermittent monitoring and rapid voltage output are adopted to establish a mechanism, the system power consumption is remarkably reduced, the service life of the battery is prolonged, and the system is suitable for long-term working measuring systems such as sensors and flowmeters. The circuit has the advantages of high linearity, low power consumption, high response speed and the like.

This application discloses a supercapacitor measurement method and system, relating to the field of supercapacitor testing technology. The method employs segmented discharge combined with dynamic threshold determination. First, a large current is rapidly passed through the nonlinear region. Then, the effective measurement range is adjusted in real time based on temperature, discharge current, and internal resistance. Finally, a small current is switched to complete high-precision sampling. Therefore, this method solves the technical problems of traditional measurement methods, such as susceptibility to operating condition fluctuations, inaccurate linear region determination, large nonlinear region errors, and poor measurement consistency. It achieves high measurement accuracy, strong adaptability, stable and reliable results, and faster detection speed.

The application discloses an automatic gain control circuit of a trans-impedance amplifier, comprising a basic TIA circuit, an NMOS tube Q4, a voltage clamping module and a gain control module; the basic TIA circuit comprises NMOS tubes Q1, Q2 and Q3, resistors R1, R2, R3 and R4 and a capacitor C1; the source end of the NMOS tube Q4 is connected with the drain end of the NMOS tube Q2, and the drain end thereof is connected with the gate end of the NMOS tube Q1; the voltage clamping module is used for clamping the drain-source voltage of the NMOS tube Q4 at a fixed value, so that the NMOS tube Q4 works in a linear region; the gain control module is used for adjusting the gate end voltage of the NMOS tube Q4 according to the change of input optical power, so as to change the equivalent linear resistance of the NMOS tube Q4, realize continuous adjustment of the trans-impedance gain and elimination of direct current offset. The application introduces the NMOS tube Q4 working in the linear region, innovatively multiplexes the direct current offset circuit into the automatic gain control circuit, realizes continuous adjustment of the trans-impedance gain, reduces the parasitic capacitance introduced by the AGC circuit and optimizes the AGC circuit with continuous adjustable gain, so that the problem of difficult adjustment of a damping factor caused by the traditional gain continuous adjustable AGC circuit is solved.

The invention discloses a zinc-bromine flow battery SOC efficient evaluation method suitable for voltage / current sampling distortion and missing working conditions, and the method comprises the following steps: 1, building a battery output voltage / current sampling distortion and missing working condition evaluation mechanism based on distortion rate real-time evaluation, and deducing a corresponding high-precision equivalent circuit evaluation model; 2, voltage and current sample variable parameters required by identification and a target identification function are defined, and a tester is used for carrying out 24-hour real-time monitoring on an experiment platform to obtain a curve of SOC, battery voltage and current data changing along with discharge time; 3, preprocessing the sampling data, dividing the sampling data of the redox flow battery into a linear region and a nonlinear region, and highlighting partition processing of output voltage, current and SOC sampling data of the battery; and 4, inputting the processed data into the CNN-LSTM neural network model to carry out SOC estimation. According to the method, the SOC calculation precision of the ZBFB in the nonlinear discharge region can be effectively improved.

The invention discloses a motor parameter detection method based on frequency domain analysis and related equipment. The method comprises the following steps: inputting a first voltage signal to a specified phase of a motor based on a preset rule, and determining a second voltage signal which enables the motor to be in a linear region in the first voltage signal; inputting an injection voltage signal determined based on the second voltage signal to the designated phase when the motor is in the linear region; acquiring a current response signal for the injection voltage signal in the specified phase; dividing the current response signal into multiple segments of current response data based on the frequency of the injection voltage signal; the current response data comprises the injection voltage signal and the current response signal corresponding to the frequency; and determining the motor parameters based on the multiple segments of current response data, wherein the motor parameters comprise a phase resistance value and / or a phase inductance value of the motor. The accuracy of motor parameter detection can be improved, and accurate control over the motor is facilitated.

The application discloses a lightning arrester leakage current multi-sensor cooperative monitoring method and system suitable for a UAV platform. Through the UAV carrying multiple sensors, multi-physical field data is synchronously collected and time-space alignment is performed. The Fourier transform is performed on the signal to extract the fundamental wave characteristic phase difference and the third and fifth harmonic content, and a nonlinear correction model based on the four-dimensional mapping model of conductivity-electric field-temperature-frequency is constructed. The temperature drift and edge distortion error are removed by using infrared inversion junction temperature and electric field inversion potential distribution, and the equivalent characteristic phase is output. Combined with the monitoring work point moving track of the digital twin, false alarms are excluded based on the confidence weighted and cross-validation mechanism, and after determining the thermal breakdown risk, the high-speed recording mode is switched to store the fault waveform. The application realizes early and accurate warning of the lightning arrester from the linear region to the pre-breakdown region, and improves the accuracy and reliability of the UAV monitoring in complex environments.

The application relates to the technical field of electric machines, and particularly discloses an electric machine driving and control anti-interference method and system based on an optoelectronic isolator, which can accurately perceive the space-time distribution characteristics of the ground potential difference by constructing a global potential difference dynamic matrix in real time and calculating the common-mode voltage drift amount; based on this, the system no longer maintains the fixed working state of the optoelectronic isolator, but iteratively optimizes the bias current and the gain coefficient of the optoelectronic isolator according to the real-time common-mode voltage drift amount, and dynamically reconstructs the transmission parameters; so that the optoelectronic isolator always works in the optimal linear region, effectively avoids signal saturation or cutoff distortion caused by ground potential difference fluctuation, and fundamentally solves the problem that the fixed working point cannot adapt to dynamic common-mode interference.

The present disclosure relates to a method for starting a phase-locked loop and a corresponding integrated circuit. In a start-up sequence of the phase-locked loop, a voltage-controlled oscillator is operated in a linear region by a first voltage, and a first count of a register of a frequency divider is read. Then, the voltage-controlled oscillator is controlled by a second voltage having a second voltage offset from the first voltage, and a second count of the register is read. A slope of the linear region is then determined from a difference between the first and second counts and the offset of the first and second voltages. A determination of a third voltage required to reach a target frequency of an output signal is made in dependence on the slope and a deviation between a current value of the register count and a target value corresponding to the target frequency. The voltage-controlled oscillator is then controlled with the third voltage.

To provide a semiconductor device capable of improving breakdown voltage characteristics.SOLUTION: A first potential region (11) including a drain region (14) extending in a first direction (Y), a second potential region (12) surrounding the first potential region, and a drift region, a field insulating film covering the drift region, and a field resistance film provided on the field insulating film, wherein the first potential region is continuously connected to a first linear region (111) and a first end portion (111a) of the first linear region, and an end portion region (112A) having a curved first outer edge (1121), the second end portion (11a) of the first potential region is located on the first outer edge, and a length (14a) between the third end portion (d2) and the second end portion of the drain region is shorter than a length (d1) between the drain region and the second outer edge (111c) of the first linear region in the second direction (X).SELECTED DRAWING: Figure 7

The invention discloses a method for speculating a duty ratio-flow characteristic based on a duty ratio-frequency response characteristic of a high-speed switch valve, and belongs to the technical field of high-speed switch valves. The method comprises the following steps: firstly, acquiring a duty ratio-frequency response characteristic curve of the high-speed switching valve in a target driving mode, extracting corresponding controllable duty ratio upper and lower limits under different working frequencies based on the curve, and determining a linear region range of the duty ratio-flow characteristic curve according to a duty ratio range determined by the upper and lower limits; furthermore, actual flow data at two end points in the range are detected, and a linear flow prediction straight line under the frequency is obtained through fitting, so that a linear region of a complete duty ratio-flow characteristic curve can be rapidly predicted without point-by-point detection. According to the method, only one duty ratio-frequency response characteristic curve needs to be obtained, the flow linear regions under all the working frequencies can be predicted, the duty ratio-flow characteristic detection efficiency is remarkably improved, and the problems that a traditional method is long in detection time consumption and low in precision are solved.

The invention discloses a semiconductor device, and the semiconductor device comprises a semiconductor main body which is provided with a first groove and a second groove; a first conductive structure and a second conductive structure; wherein the top of the first conductive structure is a first area exposed out of the semiconductor main body, the top of the second conductive structure is a second area exposed out of the semiconductor main body, the first area is defined by a plurality of first linear areas and a plurality of first corner areas, and the second area is defined by a plurality of second linear areas and a plurality of second corner areas. The second area is defined by a plurality of second linear areas and a plurality of second corner areas, and the distance between the outer side edge of each second corner area and the first corner area is gradually increased from the middle to the two sides. By optimizing the layout of the semiconductor device, the effective utilization area of the surface of the device can be increased, the stress and the breakdown voltage at the corner of the device can be improved, the method can be compatible with the existing semiconductor groove process, and the risk of device failure caused by photoresist falling in the process is avoided.

The invention provides a VSG transient stability discrimination method and system based on trajectory sensitivity. The method comprises the following steps: constructing a VSG trajectory sensitivity model; determining a transient stability index of the VSG based on the VSG trajectory sensitivity model; in the linear region of the critical value of the stability boundary of the system, two different parameter values are taken, and transient stability indexes, corresponding to the two different parameter values, of the VSG are calculated; obtaining a system parameter critical value according to the transient stability indexes of the VSG corresponding to the two different parameter values; and if the parameter reaches the critical value, the transient instability phenomenon occurs in the system, and the VSG transient stability is judged. And the design of related control strategies and electrical parameters of the VSG grid-connected system is guided.

The invention relates to a vertical magneto-sensitive TMR sensor with a continuously adjustable linear region, belongs to the technical field of magnetic sensors, and solves the problems that a vertical magnetic field is difficult to measure and the linear region of the same sensor cannot be regulated and controlled in the prior art. The sensor comprises a Si substrate, a piezoelectric film layer, an electrode layer, a seed layer, a vertical magnetic free layer, a tunneling barrier layer, a vertical magnetic fixed layer and a protective layer from bottom to top, and the vertical magnetic free layer sequentially comprises a first magnetic material layer, a first ultrathin metal layer and a second magnetic material layer from bottom to top. And the vertical magnetic fixed layer comprises a ferromagnetic layer, a second ultrathin metal layer and an antiferromagnetic coupling layer from bottom to top. According to the sensor, the vertical magnetic anisotropy of the vertical magnetic free layer of the vertical magneto-sensitive TMR sensor is regulated and controlled by utilizing the stress generated by the piezoelectric material, continuous regulation and control in a linear range can be realized, the application scene of the sensor is remarkably expanded, and the preparation process is good in compatibility, convenient to package, low in cost and suitable for large-scale mass production.

The invention provides a storage unit erasing method and device, electronic equipment and a storage medium, and relates to the technical field of storage, and the method comprises the following steps: obtaining an erasing operation curve of a storage unit; and according to the erasing operation curve, determining the minimum operation time required for enabling the threshold voltage change of the storage unit to enter the linear region. Initial erasing voltage is applied to the storage unit, and the operation time of the initial erasing voltage is not less than the minimum operation time, so that the threshold voltage change of the storage unit enters a linear region. And after the storage unit is in the linear region, continuously applying a plurality of step-increasing erasing voltage pulses to the storage unit, and enabling the operation time of each erasing voltage pulse to be not less than the minimum operation time until the threshold voltage of the storage unit reaches the target threshold voltage. According to the storage unit erasing method provided by the invention, the erasing speed and reliability of the storage unit can be effectively improved.

This invention discloses a packaging inspection method and system based on high dynamic range 3D imaging, relating to the field of semiconductor packaging inspection technology. The method includes: acquiring multi-exposure images of the packaged device surface; pre-classifying the point cloud into metal pads, molding compounds, and pin regions based on the curvature coefficient of the saturation region and the dynamic range width of the linear region of the brightness response curve; calculating the normal vector dispersion index to extract complete point cloud layers for each material; constructing a weighted spatial transformation error function using this index as dynamic weights, and fusing multiple point clouds into a high-density complete point cloud; calculating a weighted fusion value of the local surface curvature change rate and depth gradient modulus, matching it with defect feature intervals to identify cold solder joints, warpage, and cracks, and outputting their locations; calculating a dynamic threshold based on the fusion value and the normal vector dispersion index, outputting a pass / fail conclusion, and generating an inspection report. This invention significantly improves the defect detection accuracy and reliability of complex surface packaging by adaptively adjusting parameters.

The invention discloses a high-precision fractional memory polynomial digital predistortion method and device, and the method comprises the steps: carrying out the synchronous sampling of an input signal of a predistorter and an output signal of a power amplifier, and obtaining a sampling sequence; substituting the sampling sequence into a pre-constructed fractional memory polynomial power amplifier expression, deriving a fractional memory polynomial power amplifier coefficient by adopting a least square theory, and solving by adopting characteristic decomposition; the fractional memory polynomial power amplification coefficient is subjected to predistortion compensation through an adaptive learning device; according to the fractional memory polynomial power amplifier model provided by the invention, the characteristics of a linear region and a saturation region of the power amplifier are fitted at the same time, and a good linearization effect on the power amplifier is achieved; the fractional memory polynomial power amplifier model can directly solve a numerator and denominator combination coefficient by using a characteristic decomposition theory, and can update a fractional polynomial power amplifier coefficient in real time on orbit.