83 results about "Nonlinear element" patented technology

The utility model relates to a high-capacity wavelength division multiplexing fiber bragg grating sensing system in the field of fiber sensing. The high-capacity wavelength division multiplexing fiber bragg grating sensing system comprises a mode-locked fiber laser, a spectrum expansion module, a three-port optical circulator, a fiber bragg grating array, a dispersion module, a photoelectric detector, a data acquisition module and a data processing module. The spectrum expansion module is composed of an optical fiber amplifier, a nonlinear element and a polarization controller; the optical fiber amplifier is composed of an optical isolator, an erbium-doped optical fiber, a wavelength division multiplexer and a pump light source. According to the sensing system, the dispersion Fourier transform technology is applied, the offset of the center wavelength of the fiber bragg grating is mapped into the offset of time delay between time domain reflected light pulses, and the demodulation rate and precision of the fiber bragg grating sensing system are improved; and by adding a spectrum expansion module, the spectrum of pulse data output by the light source laser is expanded into a super-continuum spectrum by using a nonlinear effect, and the simultaneous measurement of hundreds of fiber bragg grating sensors can be theoretically supported.

A Floquet mode traveling wave parametric amplifier (TWPA) is disclosed. The Floquet mode TWPA comprises a plurality of stages, where each stage is made up of a nonlinear element and a shunt capacitor. The nonlinear elements may be Josephson junctions, or a combination of series and / or parallel Josephson junctions. The Floquet mode TWPA is designed such that the critical current of the nonlinear elements in each stage is not constant. In some embodiments, the ratio of the largest critical current to the smallest critical current in the Floquet mode TWPA is at least 2:1. In some embodiments, the nonlinear elements with the largest critical current are disposed at or near the input or output of the amplifier. In this way, reflections and backward amplification may be minimized. Further, the TWPA is formed using planar capacitors on a high resistivity substrate, or using low loss parallel plate capacitors.

The utility model discloses an overvoltage protection assembly and system formed by voltage-sensitive nonlinear elements. The assembly comprises an insulating core tube, a plurality of nonlinear elements, a first electrode, a second electrode, an insulating cylinder, a cooling fan and a temperature sensor. The assembly can perform forced air cooling on the nonlinear element, and is timely in response, good in cooling effect, simple and compact in structure and easy to integrate.

The invention discloses a transformer current rising experiment method, which comprises the following steps of forming an experiment transformer through parallel compensation of a capacitor and a transformer, and providing capacitor current response for the experiment transformer by using the capacitor; constructing an equivalent inductance model and an equivalent capacitance model; applying an initial current response according to a rated current response of the transformer, calculating a capacitor current response, and adding a nonlinear element to obtain a nonlinear voltage response; updating the capacitor current response based on the nonlinear voltage response to obtain an updated capacitor current response; under the condition of considering the temperature effect, updating the updated capacitor current response again based on an equivalent inductance model to obtain a final capacitor current response; performing asynchronous frequency modulation, and updating the voltage response to obtain an updated voltage response; and calculating an experiment result based on the updated voltage response. The device is suitable for the transformer current rising experiment.

A coupler includes first and second electrodes and a nonlinear element including a Josephson junction. The first and second electrodes are spaced apart from a ground plane surrounding peripheries thereof and arranged opposed to each other. The first / second electrode includes two opposing portions extended toward first and second qubits / third and fourth qubits. At least either one of a gap between the first electrode and the ground plane facing the first electrode and a gap between the second electrode and the ground plane facing the second electrode, includes a gap width of at least a value of a same extent as or a fraction of a size of the first electrode or the second electrode.

A superconducting quantum circuit includes first to fourth qubits, and a coupler including first and second electrodes and a nonlinear element bridging the first and second electrodes, wherein each of the first to fourth qubits includes a resonator including a SQUID loop circuit and a capacitor connected in parallel to the loop circuit, the first and second qubits and the third and fourth qubits capacitively coupled to the first and second electrodes of the coupler, respectively, wherein a magnitude relationship among a capacitance value C of a capacitive coupling between each of the first to fourth qubits and the coupler, a capacitance value CJ of the capacitor connected in parallel to the loop circuit for each of the first to fourth qubits, and a capacitance value Cg between the first and second electrodes of the coupler, is set to CJ>Cg>C.

The present invention relates to a method for measuring the observability of a cat qubit. The quantum system includes a command circuit and a nonlinear superconducting quantum circuit including a nonlinear element and a resonant portion. Each of the nonlinear superconducting quantum circuits has a resonant frequency f a and f b It has first and second modes. The method is a) by a command circuit, frequency f b The method includes (1) delivering microwave radiation to drive a second mode, thereby causing a nonlinear element to operate a jump operator [Equation 1] that stabilizes a two-dimensional manifold hosting a cat qubit (900), (2) mapping a measurement of the observable under measurement to a Pauli operator Z in a cat qubit manifold of a size value whose square coefficient is 2 or greater (910), and (3) measuring the value of the Pauli operator Z (920).

The present application discloses an electrochemical impedance test equivalent circuit and fitting method, which relates to the field of battery technology and can accurately fit the electrochemical impedance spectrum inside the battery, thereby accurately reflecting the working state of the battery. An electrochemical impedance test equivalent circuit includes: an electrolyte membrane resistor; at least two-order equivalent circuits connected in series with the electrolyte membrane resistor, each of the at least two-order equivalent circuits is connected in series, and each of the equivalent circuits includes linear elements and nonlinear elements.

An analog neural network is described comprising a plurality of layers interconnected to form an electrical circuit having an input adapted to receive an electrical signal corresponding to an input example and an output corresponding to an output of the neural network. Each layer comprises elements connected to each other, where the elements comprise: at least one programmable electronic element representing a weight of the neural network; at least one nonlinear element; at least one amplifier module; and an error element. Each layer also includes a measuring element for measuring a change in an electrical signal on the error element.

Disclosed is a sub-harmonic mixer module including a dielectric circuit unit and a ground conductor. The dielectric circuit unit includes a dielectric substrate, a first conversion probe, a second conversion probe, a nonlinear element, and an RF / DC ground circuit. The first conversion probe converts an RF electromagnetic wave into a first electrical signal. The second conversion probe converts an LO electromagnetic wave into a second electrical signal. The nonlinear element switches depending on the second electrical signal and generates a third electrical signal. The ground conductor is connected with the RF / DC ground circuit and provides ground voltage. The first conversion probe, the second conversion probe, the nonlinear element, and the RF / DC ground circuit are formed on one surface of the dielectric substrate. The ground conductor is disposed to make contact with the one surface of the dielectric substrate and is position-adjustable.

The invention discloses a UModel + NSTSM (U mode + nonsingular terminal sliding mode) control method for self-balancing of an unmanned bicycle. According to the method, an internal optimization-external enhancement control framework is constructed, in the internal optimization link, two U-mode controllers of a transverse roller system and a handlebar subsystem of the unmanned bicycle are linearly connected in series by introducing a transition function, in the external enhancement link, a nonsingular terminal sliding mode is adopted as a compensator of a UModel controller, and the non-singular terminal sliding mode is adopted as the compensator of the UModel controller. And therefore, an edge enhancement control system framework controlled by the UModel is constructed. According to the UModel control, a large number of nonlinear elements of a bicycle system are absorbed by utilizing technologies such as inverter dynamic inversion, the amplitude of a switching item of NSTSM control is reduced, and inherent buffeting of NSTSM control is reduced; the NSTSM designs a nonlinear sliding mode through a state error, so that the dependence of UModel control on the precision of a bicycle dynamics model is weakened; the interaction of the two effectively inhibits the nonlinearity and uncertainty of the self-balancing system of the unmanned bicycle. According to the method, the balance robustness of the unmanned bicycle can be remarkably improved, the requirement for the precision of the bicycle kinetic model is low, the control frame structure is clear, engineering implementation is easy, and the method has very high engineering significance.

The application discloses a multi-constraint geometric nonlinear level set topology optimization method, device and medium, and aims to solve the problem that the current linear condition level set method is difficult to well optimize the large deformation of a to-be-optimized component. The method divides a design domain corresponding to the to-be-optimized component into a plurality of finite element units, and establishes corresponding level set radial basis functions based on volume constraints; according to the relationship between the element strain increment and the node displacement increment of the finite element unit, displacement constraint terms and frequency constraint terms are introduced to extend the Lagrange function; according to the nonlinear element unbalanced force, the element thermal load and the overall thermal load are calculated; based on the extended Lagrange function and the overall thermal load of the to-be-optimized component under the set temperature, the design domain is topologically optimized. The application considers the displacement constraint and the frequency constraint under the nonlinearity, is suitable for the to-be-optimized component under the large deformation condition, and can achieve an optimal topology result.

A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

This invention provides an analytical method for a two-zone frequency full response model considering nonlinear elements, belonging to the field of analytical analysis of power system frequency response. First, considering the influence of nonlinear elements, a single-machine frequency full response model considering nonlinear elements is established. A piecewise modeling method for nonlinear elements and a full response analysis theory are proposed to achieve analytical analysis. Second, considering the influence of frequency spatiotemporal distribution characteristics, a two-zone equivalent frequency response model is established. An analytical method based on the model's vibration equation is proposed to achieve analytical analysis of regional frequencies. Finally, a two-zone frequency full response model considering nonlinear elements is established to achieve dynamic analytical characterization of the system's frequency response. This invention improves the accuracy of the model's description of the dynamic frequency characteristics of power systems after large disturbances, providing a new approach to solving the frequency security problem of power systems under the coupled influence of nonlinear elements and frequency spatiotemporal distribution characteristics, and contributing to the safe and stable operation of power systems.

To provide a display device with a structure suitable as a protection circuit, and a method for stabilizing an operation by increasing a function of the protection circuit.SOLUTION: A protection circuit is formed using a nonlinear element 170a including a gate insulating layer 102 that covers a gate electrode 101, a first oxide semiconductor layer 103 that overlaps with the gate electrode 101 on the gate insulating layer 102, a channel protection layer that covers a region overlapping with a channel formation region in the first oxide semiconductor layer 103, and a pair of a first wiring layer 38 and a second wiring layer 39 in which an end part overlaps with the gate electrode on the channel protection layer and a second oxide semiconductor layer 104a and a conductive layer 105a are stacked. By forming a junction between the oxide semiconductor layers with different physical properties on the gate insulating layer 102, a stable operation becomes possible as compared to Schottky junction, junction leakage is reduced, and characteristics of the nonlinear element 170a can be improved.SELECTED DRAWING: Figure 5

The invention discloses a DC micro-grid attack detection method and system considering nonlinear elements. The method comprises the following steps: grouping quantity measurement of a DC micro-grid system; a non-linear element in the direct-current micro-grid is considered, grouped quantity measurement is input into a sub-region non-linear estimation unit, a non-linear state estimation algorithm is executed, and sub-region estimation is obtained; calculating a sub-region state deviation according to the sub-region estimation, comparing the sub-region state deviation with a set critical value, if the sub-region state deviation is greater than the set critical value, detecting an attack, isolating the attack, and performing global estimation on the sub-region nonlinear estimation unit after the attack isolation; if the state deviation of the sub-regions is smaller than a set critical value, global estimation is carried out on the non-linear estimation units of the sub-regions without attack influence; and the global estimation is distributed to the sub-region nonlinear estimation units, the nonlinear state estimation algorithm is executed again until the maximum number of iterations is reached, and finally, an attack detection result of the micro-grid is obtained.

A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

In one embodiment, the bridge includes a first magnetoresistive element having a first reference angle, a second magnetoresistive element in series with the first magnetoresistive element having a second reference angle, a third magnetoresistive element in parallel with the first magnetoresistive element having the first reference angle, and a fourth magnetoresistive element in series with the third magnetoresistive element having the second reference angle. The output of the bridge has a linear response over a range of horizontal magnetic field values ​​having non-zero values, with horizontal magnetic field strength values ​​in the range associated with vertical magnetic field strength values ​​having zero Oersted (Oe) values. The reference angle indicates the angle at which the magnetoresistive elements are most sensitive to changes in the magnetic field.

A Josephson traveling wave parametric amplifier (JTWPA) comprising an input for receiving a signal, an output for providing an amplified output of the signal and one or more circuit segments in series between the input and the output and is configured for receiving a pump tone for transferring energy from the pump tone to the signal and to an idler tone. Each of the one or more circuit segments comprises, in series, one or more superconducting nonlinear elements in series, and a first resonator with a first fundamental resonance frequency configured for phase matching the pump tone with the signal and the idler tone and a second resonator with a second fundamental resonance frequency configured for mitigating pump depletion at a frequency corresponding to a higher harmonic of the pump tone with the second fundamental resonance frequency being higher than the first fundamental resonance frequency.

The present application relates to a method, apparatus, and device for designing a miniaturized tag for an insect tracking harmonic radar. The method comprises: simulating multiple nonlinear elements at a preset insect tag operating frequency using first preset simulation software based on a preset Schottky diode equivalent circuit to obtain a first simulation result, and selecting a target nonlinear element that meets a first preset condition based on the first simulation result; establishing a geometric model of the tag antenna in second preset simulation software based on the target nonlinear element, running a simulation on the geometric model to obtain a second simulation result, and evaluating the performance of the tag antenna based on the second simulation result. If the performance of the tag antenna meets the second preset condition, an insect tag is manufactured according to the design parameters of the tag antenna. This method solves the problem that existing insect tags have difficulty meeting both size and conversion efficiency requirements simultaneously, effectively reducing the tag size and improving the tag conversion efficiency.

The invention relates to a method for measuring observable quantity of cat quantum bits. A quantum system includes a command circuit and a non-linear superconducting quantum circuit including a non-linear element and a resonant portion. The non-linear superconducting quantum circuit has first and second modes with respective resonant frequency sums. The method comprises: a) delivering (900), by the command circuit, microwave radiation at a frequency to drive the second mode so that the nonlinear element constructs a hopping operator that stabilizes a two-dimensional manifold carrying the cat qubits, b) mapping (910) the observable quantity to be measured to a Fouli operator Z in a cat qubit manifold having a square modulus of magnitude greater than or equal to 2, and c) measuring (920) the value of the Fouli operator Z.

The invention relates to a quantum system (1) for stabilizing Bose quantum bits, said system comprising: an instruction circuit (5) comprising three microwave sources (11, 13, 15), and a nonlinear superconducting quantum circuit (3) comprising a four-wave hybrid nonlinear element (7) and a resonant section (9), the quantum circuit (3) has a first mode having a first resonant frequency and a second mode having a second resonant frequency. The quantum circuit (3) is arranged to design a Hamiltonian H expressed as, by dissipation in the second mode, produce an effective dissipater that stabilizes the Bose quantum bits. To this end, the first microwave source (11) delivers frequency-equal radiation, the second microwave source (13) delivers frequency-equal radiation, and the third microwave source (15) delivers frequency-equal radiation to drive the second mode.

A quantum system for executing a CNOT gate includes a control circuit that provides radiation, a target cat qubit device and a control qubit device that are linearly coupled. The target cat quantum bit comprises a non-linear element, namely ATS, and has two purposes: the first purpose is to design two-photon conversion Hamiltonian for cat quantum bit stabilization, and the second purpose is to design CNOT Hamiltonian for executing a CNOT gate together with a quantum bit control device. At any time point, the ATS plays a role of cat quantum bit stabilization or plays a role of a CNOT gate.

A phase shifter and frequency multiplier circuit, comprising a resonant tank tuned to a harmonic of an injection signal, a plurality of parallel cascaded switch banks, wherein each of said plurality of switch banks is arranged to receive a distinct phase shifted variation of said injection signal (Q+, Q-, I+, I-), wherein each of said plurality of switch banks comprises a contribution unit wherein said contribution unit comprises a non-linear element for receiving said distinct phase shifted variation of said injection signal (Q+, Q-, I+, I-) and for providing a harmonic of said corresponding received distinct phase shifted variation of said injection signal, a switch connected in series with said non-linear element and connected to said resonant tank and a controller arranged for controlling said switches of said contribution units of each of said plurality of switch banks.

The present invention is entitled "Dual-Mode Frequency Multiplier" and provides an exemplary dual-mode frequency multiplier embodiment, which includes: a first nonlinear element and a second nonlinear element, a summing node and a switchable phase shifter. The first nonlinear element and the second nonlinear element are driven by a differential signal to generate a first branch signal and a second branch signal, each having even harmonics and odd harmonics, the even harmonics being in phase and the odd harmonics being out of phase. The first branch signal and the second branch signal are combined at the summing node to form a combined signal. The switchable phase shifter couples the first nonlinear element to the summing node, thereby providing a phase shift switchable between 0° and 180° to the first branch signal to suppress odd harmonics or even harmonics from the combined signal.

A photonic integrated circuit includes an optical input configured to receive pump radiation, and a plurality of nonlinear elements connected to the optical input. The plurality of nonlinear elements are configured to generate broadband radiation upon receiving the pump radiation. At least two of the plurality of nonlinear elements differ in at least a material and / or a dimension.

The present disclosure is directed to a display circuit that can be formed on a flexible substrate. The circuit includes a voltage divider formed from first and second nonlinear resistor devices or first and second transistors connected in a diode configuration. The circuit includes a driving thin film transistor connected to the voltage divider. The nonlinear resistor device may include a bottom electrode that is an amorphous metal or a crystalline metal. The first and second transistors connected in a diode configuration may have a bottom electrode that is an amorphous metal. The top electrode may be a crystalline metal. The driving thin film transistor may have a bottom electrode that is an amorphous metal or a crystalline metal.

To provide a protection circuit with a suitable structure in order to take advantage of characteristics of a display device including an oxide semiconductor that has excellent operation characteristics and can be manufactured at low temperature.SOLUTION: A nonlinear element 30a forming a protection circuit includes a gate insulating layer 37 that covers a gate electrode 15, a pair of a first wiring layer 38 and a second wiring layer 39 in which an end part overlaps with the gate electrode 15 on the gate insulating layer 37 and a second oxide semiconductor layer 40 and a conductive layer 41 are stacked, and a first oxide semiconductor layer 36 that overlaps with at least the gate electrode 15 and is in contact with a part of a side surface part and an upper surface part of the conductive layer 41 in the gate insulating layer 37, the first wiring layer 38, and the second wiring layer 39 and a side surface part of the second oxide semiconductor layer 40. By forming a junction between the oxide semiconductor layers with different physical properties on the gate insulating layer 37, a stable operation becomes possible as compared to Schottky junction, junction leakage is reduced, and characteristics of the nonlinear element 30a can be improved.SELECTED DRAWING: Figure 5

An optical logic gate is provided, comprising signal providing means (1.1, 1.2) for providing first and second optical signals having the same phase. The optical logic gate further comprises phase modulation means (2.1, 2.2) and interference means (3). The optical logic gate also comprises an optical nonlinear element (1.3) configured to interact with a pump signal, and to interact with the first and second optical signals whose phases have been shifted by the phase modulation means (2.1, 2.2) and interfered by the interference means (3), and to combine an optical output signal as a result of this nonlinear interaction as a logic output signal.

The surge protection device comprises a shell, a nonlinear element, a first wiring board, a second wiring board and a thermal disengagement assembly, the nonlinear element comprises a first pin and a second pin, the surge protection device further comprises an elastic piece and an indicating piece which are installed in the shell, the thermal disengagement assembly comprises the elastic piece and the indicating piece, and the second pin is electrically connected with the second wiring board through the elastic piece. The elastic sheet comprises a movable part and a fixed part electrically connected with the second wiring board, the movable part is welded with the second pin through a hot-melting welding part, and the movable part is laminated and fixed on the indicating piece in the thickness direction of the surge protection device; the indicating pieces are arranged on the nonlinear element at intervals in a stacked mode in the thickness direction of the surge protection device and can move between a first position and a second position in the thickness direction of the surge protection device. According to the surge protection device, the elastic sheet integrates multiple functions. The assembling method of the surge protection device is used for assembling the surge protection device. According to the assembling method, the steps are few, assembling is simple, and all the steps are stacked type assembling.