439results about "Semiconductor laser optical device" patented technology

To reduce the wiring inductance when establishing electrical connection between a semiconductor laser and a laser driver in a semiconductor laser driving apparatus. A semiconductor laser driving apparatus includes a substrate, a laser driver, and a semiconductor laser. The substrate incorporates the laser driver. The semiconductor laser is mounted on one surface of the substrate. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. A shield suppresses flow of electromagnetic waves to / from an outside of the semiconductor laser driving apparatus for at least one of the semiconductor laser and the laser driver.

A laser apparatus includes: one or more laser diodes and two or more optical combiners. Further, output sides of the one or more laser diodes are connected to an input side of one optical combiner among the two or more optical combiners, and an output side of the one optical combiner is connected to an input side of an optical combiner other than the one optical combiner.

The invention provides a packaging structure, an optical module and optical communication equipment, the packaging structure is a transistor-shaped packaging structure, and the packaging structure comprises a tube cap which is provided with a transparent window; the tube seat is matched with the tube cap to form a cavity structure; the HCSEL chip is arranged in the cavity structure, the plane where the HCSEL chip is located is parallel to the bearing surface of the tube seat, and an optical signal emitted by the HCSEL chip faces the transparent window; wherein a detection unit is arranged in the HCSEL chip, and the detection unit is used for detecting the power of an optical signal emitted by the HCSEL chip. The horizontal cavity surface laser chip integrated with the detection unit is arranged in the packaging structure, so that the most simplified packaging form is realized, the packaging process is simplified, and the packaging volume is reduced.

The invention relates to an external cavity high-power narrow-linewidth laser based on weak feedback, and the laser comprises a sub-light source output part which is used for outputting a sub-light source; the laser output part is used for outputting narrow linewidth laser; the isolator is arranged between the sub light source output part and the laser output part; the multi-layer reflecting film assembly is plated at the input end of the isolator or the output end of the sub light source output part and is used for filtering the sub light sources to form transmission light and feedback light; the rear end of the isolator outputs the transmission light to the laser output part, so that the transmission light is output as narrow-linewidth laser; and the sub light source output part is also used for receiving the feedback light so as to realize self-injection locking, and the laser has the advantages of high-power narrow-linewidth laser output, simple structure, low cost, simple process, relatively small packaging size and convenience in laser packaging.

A coherent optical injection locking (COIL) apparatus generates multiple optical source outputs from a single optical source generated by a parent laser. The COIL apparatus includes a plurality of optical source generators each having a child laser, of lesser performance than the parent laser, that is injection locked to the single optical source. The optical source generators may have one or both of a shared configuration and a cascaded configuration that replicates the single optical source, or a single wavelength of the single optical source when it is a comb source.

The present application relates to an external cavity narrow linewidth laser assembly, comprising: a substrate, to which a gain chip for emitting laser light is fixedly connected; a first light-transmitting reflector and a second light-transmitting reflector, spaced in sequence and located in the direction of the laser emitting end of the gain chip, are also connected to the substrate; the first light-transmitting reflector is spaced apart from the gain chip and together form a first external optical resonant cavity; the second light-transmitting reflector is spaced apart from the first light-transmitting reflector and together with the gain chip form a second external optical resonant cavity. The first and second external optical resonant cavities of the external cavity narrow linewidth laser assembly of the present application significantly increase the resonant cavity length within the limited tube shell space. The longer the resonant cavity length, the longer the coherent light length, and thus the narrower the linewidth, achieving higher performance while maintaining a low cost.

An infrared-laser source device (10) provided with an external housing (11), said external housing (11) comprising: a light output interface (12) arranged in a front part (F) of the external housing (11), at least one infrared-laser source (14) arranged in a rear part (R) of the external housing (11) and configured to emit an IR-laser beam (B) providing a first emitting area (C1) at the light output interface (12), and a first light distributing element (15) configured to diverge light at the light output interface (12), wherein said infrared-laser source device further comprises a second light distributing element (16) separated from the first light distributing element (15) and providing, at the light output interface (12), a second emitting area (C2) larger than the first emitting area (C1).

The invention discloses a beat frequency comparison device mediated by an optical frequency comb. The beat frequency comparison device comprises the optical frequency comb, a first frequency stabilized laser, a first beat frequency device, a first frequency mixer, a first high-pass filter, a second frequency stabilized laser, a second beat frequency device, a second frequency mixer, a second high-pass filter, a DDS signal generator, a third frequency mixer and a low-pass filter. Frequency-stabilized lasers output by the first frequency-stabilized laser and the second frequency-stabilized laser and an optical frequency comb output by the optical frequency comb are subjected to beat frequency in the first beat frequency device and the second beat frequency device respectively, and first beat frequency and second beat frequency are obtained; the first beat frequency and the second beat frequency are mixed with the carrier envelope offset frequency of the optical frequency comb, and a first sum frequency and a second sum frequency are filtered out; the first sum frequency obtains a synthetic frequency through direct digital frequency synthesis; the second sum frequency and the synthetic frequency are mixed in the third mixer, and then the difference frequency is filtered out through the low-pass filter. According to the invention, beat frequency comparison of frequency-stabilized lasers with different wavelengths can be realized, and the influence of the stability of the optical frequency comb is avoided.

A semiconductor laser and a photonic nonlinear circuit chip are integrated together. The nonlinear circuit chip may include a nonlinear waveguide configured or controlled to enable sum-frequency generation, difference-frequency generation, second-harmonic generation, parametric amplification, or other nonlinear processes. Coupling between the semiconductor laser and the nonlinear circuit may be optimized by mode-matching, while back-reflections are minimized by diverting the reflections so that optical isolators are not needed. The integration of the semiconductor laser and the nonlinear photonic circuit chip enables nonlinear optical processing using a compact and scalable platform in a flexible manner that is compatible with different types of semiconductor lasers and different operation regimes. An additional input is provided so users can input an optical signal into the photonic chip for processing therein. In some examples, the photonic chip is configured with pump resonators, such as racetrack resonators. Method and device examples are described herein.

The invention discloses a multi-wavelength laser based on an MEMS galvanometer, a multi-gas laser detector and a detection method. The multi-wavelength laser comprises a laser tube shell, N laser chips, a light path assembly and the MEMS galvanometer, wherein the N laser chips, the light path assembly and the MEMS galvanometer are arranged in the laser tube shell; the optical path assembly comprises N lens groups and N optical isolators; the N laser chips are distributed in the laser tube shell in an array mode, and laser emitted by each laser chip is collimated by one lens group and stabilized by one optical isolator, and then is input into the MEMS galvanometer; and the MEMS galvanometer selectively outputs the laser with different optical axes as a detection light beam for measuring different gas components. The multi-gas laser detector comprises a multi-wavelength laser based on the MEMS galvanometer, a photoelectric detector, a laser driving unit, a signal conditioning unit and a controller. The device is simple in structure, small in size, low in power consumption and capable of achieving multi-component atmospheric environment gas detection.

A multi-junction laser-diode module includes (a) a multi-junction laser diode having a plurality of laser junctions stacked in a vertical dimension parallel to the fast-axes of the laser beams emitted by the laser junctions, (b) a fast-axis cylindrical lens collimating each laser beam in the fast axis, whereby the laser beams emerge from the fast-axis cylindrical lens with mutually nonparallel propagation directions, (c) a transmissive beam-deflecting element that deflects the laser beams in the fast-axis dimension after the fast-axis cylindrical lens to make their propagation directions parallel, and (d) a slow-axis cylindrical lens configured to collimate each laser beam in the slow axis. The transmissive beam-deflecting element corrects for the propagation-direction discrepancy between the laser beams, in the fast-axis dimension, caused by fast-axis collimation. The multi-junction laser-diode module can thereby produce a laser beam bundle suitable for high-brightness fiber-coupling.

A light emitting device includes: a base member including a mounting surface, a first light-emitting element that is disposed on the mounting surface and emits light passing along a first optical axis, a second light-emitting element that is disposed on the mounting surface and emits light passing along a second optical axis, a third light-emitting element that is disposed on the mounting surface and emits light passing along a third optical axis, and one or more light reflective members including a first light reflective surface that includes a first position to be irradiated with the light passing along the first optical axis, a second light reflective surface that includes a second position to be irradiated with the light passing along the second optical axis and, and a third light reflective surface that includes a third position to be irradiated with the light passing along the third optical axis.

A stepless semiconductor laser device (10), comprising a chip base (11), a plurality of laser chips (119), a plurality of fast-axis collimating mirrors (12), a plurality of slow-axis collimating mirrors (13), a plurality of first reflecting mirrors (14) and a beam-combining assembly, wherein the plurality of laser chips (119) are arranged on a surface of one side of the chip base (11), and the plurality of laser chips (119) have the same height in a direction perpendicular to the surface of the chip base (11); the plurality of laser chips (119) are divided into two rows and respectively serve as a first light-emitting assembly (111) and a second light-emitting assembly (112), and the plurality of laser chips (119) in the first light-emitting assembly (111) and the plurality of laser chips (119) in the second light-emitting assembly (112) are arranged in a staggered manner; in the light emission direction of each laser chip (119), a fast-axis collimating mirror (12), a slow-axis collimating mirror (13) and a first reflecting mirror (14) are arranged in sequence; and the beam-combining assembly is located on light reflection paths of the first reflecting mirrors (14) and is configured to perform beam combination on laser light that passes through the first reflecting mirrors (14).

A light-emitting device array includes a first light-emitting device, a second light-emitting device, and a third light-emitting device. A first beam shaping structure of the first light-emitting device is configured to convert light emitted by a first light-emitting structure of first light-emitting device into first structured light. A second beam shaping structure of the second light-emitting device is configured to convert light emitted by a second light-emitting structure of second light-emitting device into second structured light. Speckle patterns and spatial distributions of the first structured light and the second structured light on a projection plane are the same. A third beam shaping structure of the third light-emitting device is configured to convert light emitted by a third light-emitting structure of third light-emitting device into third structured light.

An optical semiconductor device includes a substrate on which an optical semiconductor element is mounted, a first optical system that is mounted on a first surface of the substrate and changes a direction of an optical axis of the optical semiconductor element to a direction passing through the substrate; and a second optical system that is mounted on a second surface of the substrate opposite to the first surface and coupled to the optical axis passing through the substrate.

The invention relates to the technical field of semiconductor laser control, and discloses a laser stable power control device for an array atom magnetometer and a control method of the laser stable power control device. The laser light splitting optical path is arranged at the output end of the amplification laser; the double-ring active anti-interference stable power control board card is connected with a photoelectric detector in the laser light splitting light path, and the double-ring active anti-interference stable power control board card is used for receiving a light power signal of the measuring light provided by the laser light splitting light path so as to obtain the magnitude of compensation current needed by an amplification laser; the digital laser controller is used for injecting current into the amplification laser and controlling the temperature of the amplification laser; the beam splitter is connected with one end, far away from the amplification laser, of the laser splitting light path; and the array type atom magnetometer is used for carrying out array type measurement on a space magnetic field. The power stability of the amplification laser is improved.

The invention provides a high-power external cavity tunable quantum cascade laser output module. The high-power external cavity tunable quantum cascade laser output module comprises a first lens, a first half-wave plate and a first mid-infrared grid polaroid which are sequentially arranged along a light path of a first laser; a second lens, a second half-wave plate, a second mid-infrared grid polarizer and a third half-wave plate are sequentially arranged along the light path of the second laser; emergent light of the first mid-infrared grid polaroid and the third half-wave plate is converged on different surfaces of the third mid-infrared grid polaroid, the first blazed grating is arranged on a reflection light path of the first mid-infrared grid polaroid, and the second blazed grating is arranged on a reflection light path of the second mid-infrared grid polaroid. According to the invention, the problems of wavelength locking and low polarization beam combination efficiency caused by insufficient polarization state of the quantum cascade laser can be effectively solved, narrow linewidth output and wavelength tuning of the quantum cascade laser can be realized, and even high-power dual-wavelength tunable output can be realized through polarization beam combination structure expansion.

The invention discloses an atomic sensing laser collimation rounding method based on a function multiplexing metasurface. Through the metasurface phase regulation and control technology, a metasurface unit library meeting the collimation phase configuration requirement and circular polarization combined regulation and control is designed, and dual-function integration of collimation of emergent light of the atomic sensing laser and conversion from linear polarization to circular polarization is achieved. A highly circularly polarized collimated light beam is provided for atom system comprehensive polarization through a single-layer metasurface device. According to the technology, the size of a pumping light path in an atom sensing system can be remarkably reduced, the integration degree of a collimation circular polarization light path system is improved, and the technology is suitable for the optical regulation and control requirement of a miniaturized chip atom sensor.

Optical frequency combs and related methods, devices, and systems are described. An example device can comprise a waveguide configured to optically couple to an optical source and at least one optical resonator optically coupled to the waveguide. The one or more of the at least one optical resonator can be tuned such that an optical frequency comb is generated based on mode interaction between two different modes of the at least one optical resonator. The device can comprise an output coupled to the waveguide and configured to output the optical frequency comb.

The present disclosure relates to a laser system / package that is configured to enable the detection of a change in an optical device that is intended to alter light emitted from the laser. The system is designed to measure an electric or magnetic field that is affected by the optical device. As a result, changes in the optical device, for example because the optical device has been damaged or dislodged or removed, should be detected by a corresponding change in the electric or magnetic field.

A laser assembly (10) that generates a first beam (40) includes an emitter (16), a transmission grating assembly (20), and a redirector assembly (22). The emitter (16) emits an emitter beam (16a) from a first facet (16c). The transmission grating assembly (20) is positioned in the path of the emitter beam (16a), and the transmission grating assembly (20) diffracts the emitter beam (16a) into the first beam (40) and a second beam (42) during transmission through the transmission grating assembly (20). The redirector assembly (22) receives the second beam (42) and directs a redirected beam (44) at the transmission grating assembly (20) to form an external cavity.

A device includes a multiple-wavelength (e.g., dual wavelength) vertical-cavity surface-emitting laser (VCSEL) array including a first VCSEL set including one or more first VCSEL to emit first VCSEL radiation at a first wavelength, and a second VCSEL set including one or more second VCSEL to emit second VCSEL radiation at a second wavelength different than the first wavelength. The device includes upstream optics to upstream optics to (a) collimate the first VCSEL radiation emitted by the first VCSEL set and (b) collimate the second VCSEL radiation emitted by the second VCSEL set. The device also includes a vapor cell to receive the collimated first VCSEL radiation and the collimated second VCSEL radiation and to provide an output beam as a function of the received collimated first VCSEL radiation and collimated second VCSEL radiation, and measurement circuitry to analyze the output beam provided by the vapor cell.

A frequency sweep control method and apparatus are provided. The method includes: outputting a first optical signal of a first laser unit, where a first frequency sweep range of the first optical signal is determined based on a first reference light emitting frequency and a first frequency variation upper limit; and switching to output a second optical signal of a second laser unit when a first frequency variation of the first optical signal is greater than or equal to a first threshold, where a second frequency sweep range of the second optical signal is determined based on a second reference light emitting frequency and a second frequency variation upper limit, and the first threshold is less than the first frequency variation upper limit.

A laser light source module includes a laser chip, a wedge structure, a plano-convex lens, and an optical fiber. The laser chip is configured to emit a first light beam and a second light beam. The wedge structure is configured to refract the first light beam and the second light beam into a third light beam and make the first light beam and the second light beam overlap each other. The wedge structure is located between the laser chip and the plano-convex lens. The plano-convex lens is located between the wedge structure and the optical fiber.

A light-emitting device includes a laser element array having a quadrangular planar shape, a pair of capacitors that supply an electric current for light emission of the laser element array, and a driving unit that drives the laser element array by turning on and off the electric current for light emission of the laser element array. The pair of capacitors are disposed beside two sides of the laser element array that face each other so as to sandwich the laser element array, and the driving unit is disposed beside another side of the laser element array.

Disclosed in the embodiments of the present application is a spatial beam combining method for semiconductor laser modules. The method comprises: acquiring a first radius of curvature of a second lens and a second radius of curvature of a third lens to determine a first adjustment instruction and a second adjustment instruction; on the basis of the first adjustment instruction and the second adjustment instruction, adjusting the second lens and the third lens; controlling a first light beam emitted by a first semiconductor laser chip to be transmitted into a polarizing beam splitter via a first lens and the adjusted second lens; and controlling a second beam emitted by a second semiconductor laser chip to be transmitted into the polarizing beam splitter successively via the first lens, the adjusted third lens and a reflector, such that by means of the polarizing beam splitter, the first light beam and the second light beam are polarization-combined into a third optical path to form a third light beam, the third light beam being coupled into an optical fiber via a fourth lens.

An optical apparatus includes: a base; a light emitting element arranged on the base and configured to output laser light; a plurality of optical components arranged on the base and configured to guide the laser light output from the light emitting element to an optical fiber, and couple the laser light with the optical fiber; and a shielding unit arranged on the base and configured to block stray light deviated from a predetermined optical path in a first optical component as the optical component and traveling to a second optical component as the optical component, and reflect the stray light in a direction deviating from the first optical component.

A line-field optical coherence tomography (OCT) system and an absorbance spectroscopy system are provided that use a tunable or swept laser architecture in a cat's eye configuration with a tilt-tuned thin-film interference filter, preferably a transmissive tilt-tuned thin-film interference filter. [Solution] The optical coherence tomography system 200 of the present invention comprises a tunable laser 100 including a gain chip 110, a collimating lens 118 that collimates light from the gain chip 110, an end reflector 122, a focusing lens 120 that focuses the collimated light 124 onto the end reflector 122, a thin-film bandpass filter 130 between the collimating lens 118 and the focusing lens 120, and at least one angle control actuator 132 that changes the angle of the thin-film filter 130 relative to the collimated light 124, an interferometer having a reference arm 212 and a measurement arm 214 that receives light from the laser 100, and a sensor 230 that detects an interference signal between the light from the reference arm 212 and the light from the measurement arm 214.

A method for manufacturing an optoelectronic structure and a package structure are provided. The method includes providing a substrate and a light source module and a photonic component over the substrate; and adjusting a lens structure to a unit specific position related to the substrate to couple an optical signal from the light source module to the photonic component.