The application belongs to the technical field of electronic technology information sensing, and particularly relates to a proximity and contact
signal identification method of a piezoelectric
transistor dual-mode sensor. A piezoelectric
capacitor is combined with a
transistor to construct a piezoelectric
transistor device to realize the integration of
proximity sensing and contact sensing. However, the piezoelectric transistor cannot effectively distinguish the source of the sensing
signal when working. The application proposes a dual-gate piezoelectric transistor proximity / contact dual-mode sensing device with an expanded gate structure, which is constructed by combining a dual-gate transistor with a piezoelectric
capacitor. The piezoelectric
capacitor serves as a sensing end of proximity and contact signals. The top
electrode of the piezoelectric capacitor device is electrically connected with the gate
electrode of the dual-gate transistor, and both are connected with the ground through a switching circuit. The other
electrode of the piezoelectric capacitor device is connected with the other gate electrode of the transistor. Through the difference between the source-
drain current signal response rules of
proximity sensing and contact sensing in the periodic on / off process of the switching circuit, the effective distinction of the
proximity sensing and contact sensing signals is realized.