9results about How to "Improve light output efficiency" patented technology

The invention discloses a semi-polar gallium nitride-based LED based on an in-situ SiNx insertion layer. According to the structure of the semi-polar gallium nitride-based LED, an AlN buffer layer, a u-GaN layer, the SiNx insertion layer, a u-GaN layer, an n-GaN layer, a multi-layer quantum well structure, a p-GaN layer and a p +-GaN layer are sequentially deposited on a sapphire substrate from bottom to top. According to the method, the silicon nitride (SiNx) intermediate layer is inserted through in-situ growth, and the growth mode of converting 3D into 2D is combined, so that the crystal quality of the semipolar (11-22) GaN template is improved, and the pressure stress on the sapphire substrate of the semipolar (11-22) GaN template can be effectively released; the method has good expansibility for large-area growth of the semi-polar GaN-based LED, and a possible solution is provided for large-scale manufacturing of the long-wavelength LED.

This invention relates to the field of lighting technology, and in particular to a white light supercontinuum fiber combiner, a light-emitting unit, and a method for fabricating the same, including N 2 One first input optical fiber, (N-1) 2 The first input fibers consist of a second input fiber and a square output fiber. Multiple first input fibers are arranged in a square array. One or more second input fibers are respectively disposed in the gaps formed between the multiple first input fibers. The square output fiber is fused to the tapered fused ends of the first and second input fibers. N is a natural number greater than or equal to 2. This invention's white light supercontinuum fiber combiner can transmit spectral energy with high quality, offering superior color reproduction compared to traditional white light illumination. It also meets the application requirements for high illumination brightness, effectively solving the problem of insufficient brightness in existing lighting devices.

This invention belongs to the field of optoelectronic technology, specifically relating to a method for fabricating a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. The method includes the following steps: Step 1: Obtaining a patterned microporous substrate; Step 2: Pre-wetting and seed layer construction; Step 3: Deposition of the main perovskite layer; Step 4: Slow-release controllable crystallization; The spin-coated wet film is placed in a vapor atmosphere of a good solvent for treatment, followed by thermal annealing to form a perovskite thin film within the patterned micropores; Step 5: Fabrication of a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. This invention, using pre-wetting, seed guidance, slow-release crystallization, and vapor annealing on a patterned microporous substrate, achieves precise control over the entire process of film nucleation and growth kinetics within the confined space of the micropores, thereby achieving high-quality, uniform fabrication of perovskite thin films within micron-scale micropores, and ultimately obtaining a high-performance, highly uniform microarray perovskite light-emitting device.

The invention provides a laterally buried grating DFB laser and a preparation method thereof, through stacked arrangement of an N-type contact layer, an N-type limiting layer, an active layer, a P-type limiting layer and a P-type contact layer, lateral gratings are buried at two sides of a ridge waveguide and are close to the active layer, and by using a transverse coupling mechanism of the lateral gratings and an active layer light field, the lateral optical field of the N-type contact layer and the P-type limiting layer is formed. The grating coupling coefficient mainly depends on the lateral distance instead of the etching depth, so that the sensitivity of the device performance to the etching depth is reduced, and the performance stability of the laser is remarkably improved. Meanwhile, an additional etching stop layer does not need to be introduced in the preparation process of the structure, the epitaxial growth and etching process is simplified, the manufacturing cost is reduced, lattice mismatch, interface defects and additional light absorption loss caused by the etching stop layer are avoided, and the light output efficiency and long-term reliability of the laser can be effectively improved.

The present invention provides an optical splitter based on silicon nitride photonic crystal and a preparation method thereof, the optical splitter comprising: a silicon layer, a silicon oxide layer and a silicon nitride waveguide layer arranged in sequence from bottom to top; a two-dimensional silicon nitride photonic crystal waveguide is formed in the middle part of the silicon nitride waveguide layer, and grating emitters are formed at both ends; the two-dimensional silicon nitride photonic crystal waveguide comprises a row of circular grooves arranged periodically along the length direction of the silicon nitride waveguide layer and a silicon nitride waveguide layer in the middle part; the grating emitter is a semicircular concentric surrounding grating and has two semicircular hollow holes. The applicable bandwidth of silicon nitride material is large, and the silicon nitride grating designed with two semicircular hollow holes has low optical loss and high light emission efficiency; in addition, the optical beam splitter can realize the collection of off-chip light waves while transmitting and splitting light waves to form off-chip emitted light; finally, the preparation method is well compatible with CMOS technology, the process is simple, and it is easy to mass produce.

An anti-reflective waveguide, comprising a planar waveguide; a plurality of diffractive optical elements disposed upon a first surface of the waveguide, the second surface opposing the first surface being flat; and an anti-reflective coating (664) disposed upon a second surface of the waveguide, wherein the waveguide is planar and configured to propagate light by total internal reflection between the plurality of diffractive optical elements and the anti-reflective coating (664) in a substantially first direction, and outcouple light in a second direction substantially orthogonal to the first direction, wherein the light propagating by total internal reflection comprises an s polarization component and a p polarization component, wherein the anti-reflective coating (662) is configured to reduce phase retardation between the two components such that an angle of incidence of the s component is substantially similar to that of the p component through the waveguide for a select color of the light.

The invention relates to a light emitting diode structure and a manufacturing method. The solar cell comprises a substrate, a back reflector, a buffer layer, a first semiconductor layer, an active layer and a second semiconductor layer, a Mesa structure extending to the first semiconductor layer is arranged along the second semiconductor layer, and the Mesa structure comprises a step surface and a groove which enable part of the first semiconductor layer to be exposed; the transparent conducting layer is arranged on the second semiconductor layer; the current blocking layer comprises a first insulating layer I and a first insulating layer II; the first bonding pad partially penetrates through the transparent conductive layer and the first insulating layer and is respectively contacted with the transparent conductive layer, the first insulating layer and the second semiconductor layer, and the second bonding pad partially contacts with the bottom wall of the groove; the second insulating layer is at least partially arranged on the transparent conductive layer; and the plurality of micro-disc resonant cavity structures are distributed on the surface of the second insulating layer and are in contact with the surface of the transparent conductive layer through the micropores. By introducing the micro-disc resonant cavity structure, the optical coupling efficiency and the light extraction efficiency are remarkably improved.

A display device according to an embodiment may include: a substrate including a light emitting area and a non-light emitting area; a plurality of light emitting elements disposed on the substrate; a first electrode and a second electrode spaced apart from each other and electrically connected to the plurality of light emitting elements; a cap layer disposed on the first electrode and the second electrode; and a color conversion layer disposed on the cap layer. Here, the cap layer may include a plurality of sub-insulating layers, each of which includes a first layer and a second layer stacked in this order. The first layer and the second layer may have different refractive indices.

The flip COB packaging structure comprises a substrate, a copper circuit is arranged on the substrate, and the copper circuit comprises a plurality of chip bonding pads and wires electrically connected with the adjacent chip bonding pads; each chip bonding pad is welded with a flip LED chip electrically connected with the chip bonding pad through a die bonding solder; the outer contour size of the chip bonding pad is larger than the outer contour size of the flip LED chip corresponding to the chip bonding pad and the outer contour size of the solid crystal welding flux, so that the outer edge of the chip bonding pad protrudes out of the outer edge of the flip LED chip and the outer edge of the solid crystal welding flux. High-reflection white glue is filled between the adjacent chip bonding pads, the top of the high-reflection white glue protrudes upwards, and the highest point of the high-reflection white glue is higher than the top surfaces of the chip bonding pads; the substrate is further provided with fluorescent powder glue used for sealing the copper circuit, the flip LED chip and the high-reflection white glue. The invention has the advantage of improving the lighting effect and reliability of the light source.