2results about How to "Improve light output efficiency" patented technology

This invention belongs to the field of optoelectronic technology, specifically relating to a method for fabricating a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. The method includes the following steps: Step 1: Obtaining a patterned microporous substrate; Step 2: Pre-wetting and seed layer construction; Step 3: Deposition of the main perovskite layer; Step 4: Slow-release controllable crystallization; The spin-coated wet film is placed in a vapor atmosphere of a good solvent for treatment, followed by thermal annealing to form a perovskite thin film within the patterned micropores; Step 5: Fabrication of a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. This invention, using pre-wetting, seed guidance, slow-release crystallization, and vapor annealing on a patterned microporous substrate, achieves precise control over the entire process of film nucleation and growth kinetics within the confined space of the micropores, thereby achieving high-quality, uniform fabrication of perovskite thin films within micron-scale micropores, and ultimately obtaining a high-performance, highly uniform microarray perovskite light-emitting device.

The invention provides a laterally buried grating DFB laser and a preparation method thereof, through stacked arrangement of an N-type contact layer, an N-type limiting layer, an active layer, a P-type limiting layer and a P-type contact layer, lateral gratings are buried at two sides of a ridge waveguide and are close to the active layer, and by using a transverse coupling mechanism of the lateral gratings and an active layer light field, the lateral optical field of the N-type contact layer and the P-type limiting layer is formed. The grating coupling coefficient mainly depends on the lateral distance instead of the etching depth, so that the sensitivity of the device performance to the etching depth is reduced, and the performance stability of the laser is remarkably improved. Meanwhile, an additional etching stop layer does not need to be introduced in the preparation process of the structure, the epitaxial growth and etching process is simplified, the manufacturing cost is reduced, lattice mismatch, interface defects and additional light absorption loss caused by the etching stop layer are avoided, and the light output efficiency and long-term reliability of the laser can be effectively improved.