This invention belongs to the field of optoelectronic technology, specifically relating to a method for fabricating a controllable
crystallization micron-scale
perovskite light-emitting device based on solution pretreatment. The method includes the following steps: Step 1: Obtaining a patterned microporous substrate; Step 2: Pre-
wetting and seed layer construction; Step 3: Deposition of the main
perovskite layer; Step 4: Slow-release controllable
crystallization; The spin-coated wet film is placed in a vapor
atmosphere of a good
solvent for treatment, followed by thermal annealing to form a
perovskite thin film within the patterned micropores; Step 5: Fabrication of a controllable
crystallization micron-scale perovskite light-emitting device based on solution pretreatment. This invention, using pre-
wetting, seed guidance, slow-release crystallization, and vapor annealing on a patterned microporous substrate, achieves precise control over the entire process of film
nucleation and growth
kinetics within the
confined space of the micropores, thereby achieving high-quality, uniform fabrication of perovskite thin films within micron-scale micropores, and ultimately obtaining a high-performance, highly uniform
microarray perovskite light-emitting device.