244results about How to "Improve light output efficiency" patented technology

We describe a road vehicle contact-analogue head up display (HUD) comprising: a laser-based virtual image generation system to provide a 2D virtual image; exit pupil expander optics to enlarge an eye box of the HUD; a system for sensing a lateral road position relative to the road vehicle and a vehicle pitch or horizon position; a symbol image generation system to generate symbology for the HUD; and an imagery processor coupled to the symbol image generation system, to the sensor system and to said virtual image generation system, to receive and process symbology image data to convert this to data defining a 2D image for display dependent on the sensed road position such that when viewed the virtual image appears to be at a substantially fixed position relative to said road; and wherein the virtual image is at a distance of at least 5 m from said viewer.

The invention is a light emitting diode that exhibits high reflectivity to incident light and high extraction efficiency for internally generated light. The light emitting diode includes a reflecting layer that reflects both the incident light and the internally generated light. A multi-layer semiconductor structure is deposited on the reflecting layer. The multi-layer semiconductor structure has an active layer that emits the internally generated light. An array of light extracting elements extends at least part way through the multi-layer semiconductor structure and improves the extraction efficiency for internally generated light. The light extracting elements can be an array of trenches, an array of holes, an array of ridges or an array of etched strips. The light emitting diode improves the efficiency of light recycling illumination systems.

An inorganic-light-emitter display includes a display substrate and a plurality of spatially separated inorganic light emitters distributed on the display substrate in a light-emitter layer. A light-absorbing layer located on the display substrate in the light-emitter layer is in contact with the inorganic light emitters. Among other things, the disclosed technology provides improved angular image quality by avoiding parallax between the light emitters and the light-absorbing material, increased light-output efficiency by removing the light-absorbing material from the optical path, improved contrast by increasing the light-absorbing area of the display substrate, and a reduced manufacturing cost in a mechanically and environmentally robust structure using micro transfer printing.

A light-emitting device including a light-emitting element emitting excitation light for exciting a fluorescent body, a dispersion body having the fluorescent body dispersed therein, which fluorescent body emits fluorescent light having a wavelength different from that of the excitation light, and a lead frame holding the light-emitting element and the dispersion body, wherein at least a portion of the fluorescent light emitted from the fluorescent body in the dispersion body is output to the outside from a side of the dispersion body receiving the excitation light. With this, a light-emitting device having high light output efficiency and an illumination apparatus and a display apparatus using the light-emitting device are provided.

A semiconductor light emitting device is provided which allows emission light from a light source to efficiently outgo from the semiconductor light emitting device so that the light emission intensity of the semiconductor light emitting device is increased. A penetrating opening is formed in the substantially central part of a cap member to communicate the interior side to the exterior side the cap member. The penetrating opening has an inclined portion. The inclined portion is opposed to and spaced away from a semiconductor light emitting element and includes a light entering portion through which emission light from the semiconductor light emitting element passes. The opening width of the inclined portion is getting wider from the light entering portion in the light traveling direction so that the inclined portion is tapered. The emission light from the semiconductor light emitting element can effectively outgo from the semiconductor light emitting device.

Projectile apparatus is provided employing light and sound that may be dispersed over a large area with high intensity to produce a non-lethal, visible and audible countermeasure to temporarily blind and / or disorient one or multiple potential adversaries. The apparatus is suitable for use in tactical scenarios by military, police, and special operations personnel. The apparatus is also suitable for use in training operations for military, police, and special operations personnel. For amusement or recreation, the apparatus may be used in simulated warfare or in games such as paintball.

An inorganic-light-emitter display includes a display substrate and a plurality of spatially separated inorganic light emitters distributed on the display substrate in a light-emitter layer. A light-absorbing layer located on the display substrate in the light-emitter layer is in contact with the inorganic light emitters. Among other things, the disclosed technology provides improved angular image quality by avoiding parallax between the light emitters and the light-absorbing material, increased light-output efficiency by removing the light-absorbing material from the optical path, improved contrast by increasing the light-absorbing area of the display substrate, and a reduced manufacturing cost in a mechanically and environmentally robust structure using micro transfer printing.

A light emitting device is constructed on a substrate. The device includes an n-type semiconductor layer in contact with the substrate, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver in contact with the p-type semiconductor layer. A bonding layer is formed overlying the silver layer to make an electrical connection to the silver layer. The silver layer may be thin and transparent or thicker (greater than 20 nm) and reflective.

A semiconductor light-emitting device includes: a light-emitting semiconductor element arranged on a lead frame; a transparent resin mold covering the light-emitting semiconductor element and the lead frame except a terminal portion of the lead frame; and a reflective surface formed on a bent portion of part of the lead frame. The terminal portion of the lead frame has a terminal structure, which can serve as a combination of a top-view type and a side-view type.

A lens for distribution of light from a light emitter having an emitter axis and defining an emitter plane. The lens including an emitter-adjacent base end forming an opening to an inner cavity surrounding the emitter. An inner-cavity surface includes an axis-adjacent first inner region configured for refracting emitter light rays away from the axis, a second inner region spaced from the first inner region and configured for refracting emitter light rays toward the axis, and a middle inner region joining and substantially cross-sectionally asymptotical to the first and second inner regions. The middle inner region is positioned with respect to the emitter to refract light away from the axis by progressively lesser amounts at positions progressively closer to the second inner region. The lens further has an outer surface including output regions each configured for refracting the light from a corresponding one of the inner regions such that at the outer surface light from each inner region is refracted substantially without overlapping light from the other inner regions.

A light-emitting device, including a substrate and a first electrode formed over the substrate. A light-emitting layer is formed over the first electrode. A second electrode is formed over the light-emitting layer. At least one of the first and second electrodes is transparent. A light-scattering layer comprising electrically-conductive, light-scattering particles is located in physical and electrical contact with the first or second electrode. The light-scattering layer is formed on a side of the first or second electrode, and opposite the light-emitting layer.

The invention relates to a light emitter, such as an LED sealed with a resin, in particular, an LED wherein irregularities in a surface of a sealing resin can be formed through a simpler process in order to improve the light output efficiency of the LED. The LED is an LED wherein a liquid sealing resin is mixed with a solid transparent resin different from the sealing resin in specific gravity and subsequently the mixture is injected into a package into which an LED chip is integrated and then cured, thereby sealing the chip, characterized in that the solid transparent resin is fixed to the sealing resin to be partially naked to the sealing-resin-side surface of the LED through which light from the LED chip is emitted to the outside, and be partially embedded in the sealing resin, thereby being projected into the form of convexes. This LED is used for an LED displayer, an LCD backlight source, a lighting device or the like.

A light-emitting heat-dissipating device includes at least one light-emitting chip and a circuit board. The circuit board has at least one recess and at least one thermally conducting element disposed in the recess. The light-emitting chip is disposed on the thermally conducting element and connected to the circuit board via contact pads electrically connected to a circuit layout of the circuit board. In addition, the light-emitting chip is package by a filler on the circuit board. A packaging method of the light-emitting heat-dissipating device is also disclosed.

In a method of making a semiconductor light generating device, a GaN-based semiconductor portion is formed on a GaN or AlGaN substrate. The GaN-based semiconductor portion includes a light generating film. An electrode film is formed on the GaN-based semiconductor film. A conductive substrate is bonded to a surface of the electrode film using a conductive adhesive. After bonding the conductive substrate, the GaN or AlGaN substrate is separated from the GaN-based semiconductor portion to form the semiconductor light generating device.

An organic light emitting display device includes a substrate and a plurality of pixels defined in the substrate. A pixel includes red subpixel, green subpixel, blue subpixel, and white subpixel. The organic light emitting display device includes an anode electrode formed on the substrate, a cathode electrode opposing the anode electrode, and a red common emission layer, a green common emission layer, and a blue common emission layer formed across each of the red, green, blue and white subpixel areas. The blue common emission layer is disposed above and adjacent to the anode electrode, the green common emission layer is disposed above the blue common emission layer, and the red common emission layer is disposed above the green common emission layer and adjacent to the cathode electrode.

An organic light emitting device (OLED) having increased light output efficiency and a wide color gamut, and a color display apparatus employing the OLED, includes: a substrate; a reflective electrode formed on the substrate; an organic light emitting layer formed on the reflective electrode; a semi-transparent or transparent electrode formed on the organic light emitting layer; and an optical path control layer formed on the semi-transparent or transparent electrode and formed of a light transmitting material. In the OLED, resonators are formed between the reflective electrode and the semi-transparent or transparent electrode, between the reflective electrode and the top surface of the optical path control layer, and between the top surface of the semi-transparent or transparent electrode and the top surface of the optical path control layer, respectively, therefore, as an optical mode output to the exterior of the optical path control layer, at least two multiple resonances are generated.

Projectile apparatus is provided employing light and sound that may be dispersed over a large area with high intensity to produce a non-lethal, visible and audible countermeasure to temporarily blind and / or disorient one or multiple potential adversaries. The apparatus is suitable for use in tactical scenarios by military, police, and special operations personnel. The apparatus is also suitable for use in training operations for military, police, and special operations personnel. For amusement or recreation, the apparatus may be used in simulated warfare or in games such as paintball.

A liquid crystal display includes: a display panel; and a color conversion layer positioned on the display panel, wherein the color conversion layer includes a scattering layer including a color conversion media layer and scatterers.

The invention discloses a quantum dot light-emitting diode (QLED) and a preparation method therefor, and a display, and aims to block electron injection in the QLED, strengthen carrier injection balance in the QLED, improve optical output efficiency and resistance to water and oxygen erosion of a device in the QLED, and improve the luminance, working efficiency and service life of the QLED. The invention provides the QLED, wherein the QLED comprises a first electrode layer, a second electrode layer, a hole transport layer arranged between the first electrode layer and the second electrode layer, a quantum dot light-emitting layer arranged between the hole transport layer and the second electrode layer, an electron transport layer arranged between the quantum dot light-emitting layer and the second electrode layer, and an electron buffer layer arranged between the electron transport layer and the second electrode layer.

A light emitting device includes a lower semiconductor layer of a first conductivity type; an optical emission layer formed on said lower semiconductor layer; an upper semiconductor layer of a second conductivity type opposite to said first conductivity type, said upper semiconductor layer being formed on said optical emission layer; a lower side electrode electrically connected to said lower semiconductor layer; and an upper side electrode electrically connected to said upper semiconductor layer, wherein said upper side electrode is formed on said upper semiconductor layer, and said upper semiconductor layer has a mesh pattern defining a plurality of sections each surrounded by said upper side electrode, and wherein at least one dent is disposed in at least one of said sections, said dent having a bottom reaching at least an upper surface of said lower semiconductor layer and having an opening with an upper edge spaced apart from said upper side electrode.

The present invention discloses a highly efficient light emitting diode with directional properties comprising a light cavity of semiconductor material. A portion of the surface of the light cavity acts as a parabolic shaped reflector. A light generation zone is located substantially at the focal point of this paraboloid reflector. The light out-coupling interface of the cavity is close to the focal point allowing both downward and upward generated photons to escape from the semiconductor cavity. Photons reach the out-coupling interface in perpendicular way within the out-coupling cone of the semiconductor-surrounding medium interface.

The invention provides a highly-efficiently luminescent electroluminescent device. The highly-efficiently luminescent electroluminescent device comprises a transparent base, an intensifier structure and an LED (Light Emitting Diode) unit, wherein the LED unit comprises a transparent electrode, a light emitting component with at least one light emitting layer and a reflecting electrode layer; and the intensifier structure comprises a light scattering layer with a layer of high-refractive-index particles, a surface smoothing layer with high refractive index and a protecting layer, the surface smoothing layer comprises two elements as follows: one element is a high-refractive-index inorganic nanometer particle coated with a small organic molecule, and the other element is a polymerizable monomer or a macromolecular polymer. The highly-efficiently luminescent electroluminescent device disclosed by the invention has the following advantages of: (1) improving light output efficiency; and (2) reducing production cost.

The light-emitting element emits light itself. The element includes a light-emitting portion having a higher refractive index than a refractive index of air and a diffraction grating structure provided to a light-emitting side surface of the light-emitting portion. The function that a minimum light-emission value is equal to or less than 50% of a maximum light-emission value when white light is emitted from the light-emitting portion is realized. The function is obtained by further including a color-separation filter provided between the light-emitting portion and the light-emitting side surface and making a minimum value of a spectral product obtained from a light-emission waveform of the white light emitted from the light-emitting portion and a spectral transmittance of said color-separation filter equal to or less than 50% of a maximum value thereof, or by adjusting a light-emission ratio of the light-emitting materials for said at least two primary colors among the light-emitting materials for the three primary colors.

The invention discloses a hyperbolic metamaterial composite grating-enhanced high-frequency quantum-dot single photon source. The hyperbolic metamaterial composite grating-enhanced high-frequency quantum-dot single photon source comprises a substrate, a hyperbolic metamaterial and quantum dots, wherein a grating microstructure is arranged on a surface of the hyperbolic metamaterial or in the hyperbolic metamaterial, the hyperbolic metamaterial is of a one-dimensional periodic structure formed by alternatively arranging dielectric thin films and metal thin films or the dielectric thin films and metal-like thin films, and the quantum dots are arranged in the one-dimensional periodic structure or a near field of the hyperbolic metamaterial. Spontaneous radiation enhancement of wideband of the quantum dots is achieved by the hyperbolic metamaterial, the light emergent efficiency is improved by simultaneously combining directional coupling output characteristic of the grating, the photon generation ratio and the collection and utilization ratio of the quantum-dot single photon source are greatly improved, and the high-frequency, high-brightness and directional-emission quantum-dot single photon source of GHz or above can be achieved; and meanwhile, two excitation modes of optical pumping and electric pumping are compatible, and the quantum-dot single photon source is suitable for various wave bands to an infrared band from an ultraviolet band and can be widely applied to related fields of quantum information, quantum computation, quantum imaging, quantum authentication and quantum precision measurement.

The invention is a light emitting diode that exhibits high reflectivity to incident light and high extraction efficiency for internally generated light. The light emitting diode includes a reflecting layer that reflects both the incident light and the internally generated light. A multi-layer semiconductor structure is deposited on the reflecting layer. The multi-layer semiconductor structure has an active layer that emits the internally generated light. An array of light extracting elements extends at least part way through the multi-layer semiconductor structure and improves the extraction efficiency for internally generated light. The light extracting elements can be an array of trenches, an array of holes, an array of ridges or an array of etched strips. The light emitting diode improves the efficiency of light recycling illumination systems.

Discussed is an organic light emitting display device. The organic light emitting display device includes a substrate in which red, green, and blue pixel areas are defined, a first electrode and a first hole transporting layer that are formed on the substrate, first to third emission common layers formed in each of the pixel areas on the first hole transporting layer, and an electron transporting layer and a second electrode that are formed on the third emission common layer. Accordingly, color mixture is prevented, limitations due to a defective mask are overcome, a process is simplified, and the manufacturing cost is saved.

A light emitting device includes a lower semiconductor layer of a first conductivity type; an optical emission layer formed on said lower semiconductor layer; an upper semiconductor layer of a second conductivity type opposite to said first conductivity type, said upper semiconductor layer being formed on said optical emission layer; a lower side electrode electrically connected to said lower semiconductor layer; and an upper side electrode electrically connected to said upper semiconductor layer, wherein said upper side electrode is formed on said upper semiconductor layer, and said upper semiconductor layer has a mesh pattern defining a plurality of sections each surrounded by said upper side electrode, and wherein at least one dent is disposed in at least one of said sections, said dent having a bottom reaching at least an upper surface of said lower semiconductor layer and having an opening with an upper edge spaced apart from said upper side electrode.

A light-emitting device is disclosed comprising an organic light-emitting diode structure and an encapsulation comprising a light-transmitting window with at least a first inorganic layer, an organic layer and a second inorganic layer, the organic layer comprising domains of a dispersed first organic component embedded by a second component, the first and the second component having a mutually different refractive index, the organic layer being sandwiched between the first and the second inorganic layer.

This light emitting device is provided with: a light emitting element which emits excitation light; and a far-red phosphor which is excited by the light of the light emitting element and emits light that has a peak wavelength within the range of 700-800 nm. The far-red phosphor has a median diameter within the range of 1-20 μm.