55results about How to "Improve injection balance" patented technology

The invention discloses a quantum dot light-emitting diode (QLED) and a preparation method therefor, and a display, and aims to block electron injection in the QLED, strengthen carrier injection balance in the QLED, improve optical output efficiency and resistance to water and oxygen erosion of a device in the QLED, and improve the luminance, working efficiency and service life of the QLED. The invention provides the QLED, wherein the QLED comprises a first electrode layer, a second electrode layer, a hole transport layer arranged between the first electrode layer and the second electrode layer, a quantum dot light-emitting layer arranged between the hole transport layer and the second electrode layer, an electron transport layer arranged between the quantum dot light-emitting layer and the second electrode layer, and an electron buffer layer arranged between the electron transport layer and the second electrode layer.

The invention discloses a composite hole transport layer with a multi-layer periodic doping structure, an LED device structure and application and preparation method of the LED device structure. By doping a metal oxide material in a hole organic transport layer of a quantum-dot light emitting device, the hole transport layer (HTL) taking the doping organic layer as a structural unit and with multi-layer periodic doping is fabricated, the hole injection capability of the device is remarkably improved, so that the carrier injection balance in the device is improved. Meanwhile, the influence of the doping proportion of the metal oxide doping material in the HTL on the light emitting property of the device is symmetrically researched. The structure is not limited to a quantum-dot LED, and the device structure can be implanted to other types of photoelectric devices.

The invention discloses an inorganic perovskite light emitting diode and a preparation method thereof. According to the method, a passivation layer (PVP) not only can improve the surface morphology ofthe perovskite and reduce the leakage current of the light emitting diode, but also can passivate surface defects of zinc oxide (ZnO), reduce the non-radiative recombination at the interface betweenthe perovskite and the zinc oxide and thus improve the radiative recombination efficiency, and can also improve the injection balance between electrons and holes at the same time. In addition, a composite perovskite light emitting material (Cs0.87MA0.13PbBr3) which is almost hole-free and very compact can be obtained by doping a small amount of MABr into CsPbBr3, thereby being also capable of effectively suppressing the generation of a non-radiative recombination center of elementary lead in CsPbBr3 while reducing the leakage current. The external quantum efficiency of the perovskite light emitting diode can be effectively improved according to the invention.

The invention discloses a quantum dot, a preparation method thereof, a quantum dot light-emitting device and related devices. The outermost shell layer of the quantum dot provided by the invention isa hole transport material, so that the quantum dot with the structure can be applied to the preparation of a QLED (Quantum dot Light-Emitting Diode) device. On the one hand, the hole transport material on the outermost layer of the quantum dot can serve as a hole transport layer in the QLED device, thereby reducing the process of independently manufacturing the hole transport layer, and effectively simplifying the device structure and the technological process; and on the other hand, the hole transport material on the outermost layer of the quantum dot is contacted with an electron transport layer in the QLED device to serve as an electron blocking layer, thereby being capable of blocking part of the electron transmission. The quantum dot disclosed by the invention solves a problem that electrons are enabled to become majority carriers in the QLED device due to more efficient electron transport in the prior art, thereby effectively promoting the electron-hole injection balance, and improving the efficiency and life of the QLED device.

The invention discloses a preparation method of quantum dots, wherein the preparation method comprises the steps: preparing ZnCdSe seed crystals, growing a ZnSe transition layer on the ZnCdSe seed crystals, and sequentially coating the ZnSe transition layer with a ZnSe shell layer and a ZnS shell layer. The invention also discloses the quantum dots prepared by the preparation method. Through the arrangement of the ZnSe transition layer, the relationship between a core and the shell layers is consolidated, the transition between the core and each shell layer is effectively controlled, and the defects between crystal lattices are reduced; the formation of other seed crystals in the quantum dots is inhibited through fatty acid so as to control the components, size and uniformity of the seed crystals of the quantum dots, anions are supplemented to carry out growth nucleation of the seed crystals, a quantum dot core structure with the ZnSe transition layer on the surface is formed, and then epitaxial growth of the ZnSe shell layer and the ZnS shell layer are sequentially carried out; lattice stress between components of the mixed crystal structure core and lattice stress between the core and the shell are reduced, and the prepared quantum dots are adjustable in peak position in visible light, narrow in half-peak width and high in quantum efficiency.

The invention provides bicarbazole derivatives and an organic light emitting device thereof, and belongs to the technical field of organic light emitting materials. The bicarbazole derivatives solve technical problems in the prior art that luminous performance is poor, for example, luminous efficiency is low, and service life is short. According to the invention, 3 and 3' positions of two carbazole structures are connected to form a bicarbazole structure, charge carrier injection balance is improved through adjusting groups of R1, R2, Ar1, and Ar2, and the recombination ratio of electrons andelectron holes in a luminous layer is improved. The bicarbazole derivatives provided by the invention can be used for the organic light emitting device, and especially used as host materials of a luminescent layer in the organic light-emitting device to exhibit the advantages of higher luminous efficiency and obviously-increased service life; and the organic light emitting device provided by the invention is superior to a current common OLED (organic light emitting diode) device.

The invention provides ink. On the basis that the total weight of the ink is 100%, the ink is prepared from the following components by weight percent: 0.01-30.0% of a magnetic carrier transport material and 70-99.9% of an organic solvent, wherein the magnetic carrier transport material has a core-shell structure, an inner core of the core-shell structure is prepared from magnetic nanoparticles, an outer shell of the core-shell structure is prepared from a carrier transport material, and the carrier transport material is an inorganic semiconductor material.

The invention belongs to the technical field of quantum dots, and particularly relates to an electrode and a QLED device. The electrode comprises an electrode material and a magnetic material, whereinthe electrode material is an anode material or a cathode material. The magnetic material in the electrode can adjust the carrier mobility; when the electrode material is an anode, the magnetic material can adjust the hole mobility, and when the electrode material is a cathode, the magnetic material can adjust the hole mobility, so that the injection balance of carriers is improved; and therefore,when the electrode is used for preparing the QLED device, the luminous efficiency and the stability of the device can be effectively improved.

The invention provides a fluorenyl terpolymer/ferric oxide nanoparticle composite material and a preparation method thereof. The composite material can be used for preparing an electric storage device. The electric storage device has the advantages of excellent ternary electric storage performance, low turn-on voltage, high switch current ratio, high storage density, quick response, repeated cyclic reading and writing and excellent performance. The preparation method of the fluorenyl terpolymer/ferric oxide nanoparticle composite material is simple; the preparation process of the electric storage device is stable, the operation is simple, and the fluorenyl terpolymer/ferric oxide nanoparticle composite material has a good application prospect in the field of information storage.

The invention belongs to the technical field of display, and particularly relates to an ink, a quantum dot film and a quantum dot light emitting diode. The ink comprises an organic solvent, quantum dots and a block copolymer, wherein the quantum dots and the block copolymer are dispersed in the organic solvent, the molecular general formula of the block copolymer is sulfydryl-polystyrene-A-R, A comprises a block chain as shown in a formula I and/or a formula II in the specification, R is an aliphatic group or an aromatic group, and in the formula I and the formula II, x and y are positive integers. The ink containing the specific block copolymer can improve the film-forming property and light emitting property of an ink-jet printing quantum dot light emitting semiconductor.

The invention belongs to the technical field of quantum dots, and particularly relates to a composite material and a QLED device. The QLED device comprises an anode, a quantum dot luminescent layer and a cathode that are stacked, an electronic functional layer is arranged between the cathode and the quantum dot luminescent layer, and the electronic functional layer contains an electronic functional material and a magnetic material, wherein the electronic functional material is an electron injection material or an electron transport material. According to the QLED device of the invention, sincethe electron mobility can be adjusted by the magnetic material, the injection balance of carriers can be improved, and therefore, the QLED device has excellent luminous efficiency and stability.

The invention discloses a composite material, a preparation method thereof and a quantum dot light-emitting diode. The preparation method of the composite material comprises the steps that a quantum dot solution is provided, the surfaces of quantum dots are combined with first ligands, and the first ligands are organic ligands containing carboxyl; a ligand solution in which a second ligand is dispersed is provided, the second ligand is polyaniline, and a solvent of the ligand solution and a solvent of the quantum dot solution are mutually soluble; and the quantum dot solution is mixed with the ligand solution, and carrying out ligand exchange reaction on the surfaces of the quantum dots to obtain the composite material. The polyaniline and the quantum dots are combined together, on one hand, the hole transmission capacity of the quantum dot light-emitting layer is improved through the hole transmission capacity of the polyaniline, and injection balance of carriers is improved; and on the other hand, polyaniline serves as a surface ligand of the quantum dots, agglomeration of the quantum dots can be reduced, electron injection can be hindered, injection balance of carriers is further improved, and the device performance is improved.

The invention belongs to the technical field of display, and particularly relates to an ink, a quantum dot film and a quantum dot light emitting diode. The ink comprises an organic solvent, quantum dots and a block copolymer, wherein the quantum dots and the block copolymer are dispersed in the organic solvent, the molecular general formula of the block copolymer is sulfydryl-polystyrene-A-R, A comprises a block chain as shown in a formula I and/or a formula II in the specification, R is an aliphatic group or an aromatic group, and in the formula I and the formula II, x and y are positive integers. The ink containing the specific block copolymer can improve the process film-forming property and light emitting property of an ink-jet printing quantum dot light-emitting semiconductor.

The invention provides ink. On the basis that the total weight of the ink is 100%, the ink is prepared from the following components by weight percent: 0.01-15.0% of magnetic nanoparticles, 0.2-40.0%of a carrier transport material and 45.0-99.0% of an organic solvent, wherein the carrier transport material is prepared from an organic material.

The invention relates to the technical field of display, and provides a quantum dot light emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises an anode and a cathode which are oppositely arranged, a quantum dot light-emitting layer arranged between the anode and the cathode, and an electron transport layer arranged between the quantum dot light-emitting layer and the cathode. Wherein the electron transport layer contains an electron transport material and an active material, and the active material is selected from at least one of organic hydrocarbon with at least one hydrogen atom substituted by carboxyl, organic ester containing a carbon-carbon double bond or a carbon-carbon triple bond or a benzene ring, and unsaturated ketone. The positive aging effect of the quantum dot light-emitting diode is improved by introducing the active material into the electron transport layer.

The invention provides a carbazolyl conjugated polymer, and an electric storage device prepared by using the carbazolyl conjugated polymer as an organic layer. The device has excellent electric storage performance. The prepared electric storage device has the advantages of further reduced turn-on voltage, high switching current ratio, large storage density, quick response, repeated cyclic read-write and excellent performance. A synthesis method of the carbazolyl conjugated polymer is simple, the preparation process of the electric storage device is stable, the operation is simple, industrial production can be realized, and the prepared electric storage device shows ternary electric storage performance and has a good application prospect in the field of information storage.

The invention relates to the technical field of display, and provides a quantum dot light emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises an anode and a cathode which are oppositely arranged, a quantum dot light-emitting layer arranged between the anode and the cathode, and an electronic function layer arranged between the quantum dot light-emitting layer and the cathode. The surface, adjacent to the cathode, of the electronic functional layer is treated by an active material, or an interface layer is arranged between the electronic functional layer and the cathode, and the material of the interface layer contains the active material. Wherein the active material is selected from at least one of organic hydrocarbon with at least one hydrogen atom substituted by carboxyl, organic ester containing a carbon-carbon double bond or a carbon-carbon triple bond or a benzene ring, and unsaturated ketone. According to the invention, the active material is introduced into the quantum dot light-emitting layer, so that the positive aging effect of the quantum dot light-emitting diode is improved.