55results about How to "Improve injection balance" patented technology

The invention discloses a quantum dot light-emitting diode (QLED) and a preparation method therefor, and a display, and aims to block electron injection in the QLED, strengthen carrier injection balance in the QLED, improve optical output efficiency and resistance to water and oxygen erosion of a device in the QLED, and improve the luminance, working efficiency and service life of the QLED. The invention provides the QLED, wherein the QLED comprises a first electrode layer, a second electrode layer, a hole transport layer arranged between the first electrode layer and the second electrode layer, a quantum dot light-emitting layer arranged between the hole transport layer and the second electrode layer, an electron transport layer arranged between the quantum dot light-emitting layer and the second electrode layer, and an electron buffer layer arranged between the electron transport layer and the second electrode layer.

The invention discloses a composite hole transport layer with a multi-layer periodic doping structure, an LED device structure and application and preparation method of the LED device structure. By doping a metal oxide material in a hole organic transport layer of a quantum-dot light emitting device, the hole transport layer (HTL) taking the doping organic layer as a structural unit and with multi-layer periodic doping is fabricated, the hole injection capability of the device is remarkably improved, so that the carrier injection balance in the device is improved. Meanwhile, the influence of the doping proportion of the metal oxide doping material in the HTL on the light emitting property of the device is symmetrically researched. The structure is not limited to a quantum-dot LED, and the device structure can be implanted to other types of photoelectric devices.

The invention discloses an organic-inorganic hybrid electroluminescent device and a preparation method thereof. The organic-inorganic hybrid electroluminescent device comprises a transparent conductive substrate, a ZnO seed crystal layer, a ZnO nanometer array, an organic-inorganic hybrid light emitting layer, an organic hole transportation layer and a metal anode, wherein the transparent conductive substrate, the ZnO seed crystal layer, the ZnO nanometer array, the organic-inorganic hybrid light emitting layer, the organic hole transportation layer and the metal anode are successively arranged from bottom to top. The preparation method comprises the steps of preparing ZnO quantum dot solution according to a solution method, performing spin coating of the ZnO quantum dot solution on the transparent conductive substrate for acquiring a wafer which carries the ZnO seed crystal layer, growing the ZnO nanometer array according to a hydro-thermal method, preparing the organic-inorganic hybrid light emitting layer through the solution method, performing spin coating of the organic hole transportation layer, evaporating the metal anode, and obtaining the organic-inorganic hybrid electroluminescent device. The organic-inorganic hybrid electroluminescent device has advantages of effectively improving electronic and hole injection balance of the device, improving light emitting efficiency of the device and improving stability and service life of the device. The preparation method of the device has advantages of low preparation cost, easy realization of large-area production, and wide application in the electroluminescent device field.

The invention relates to an nc-Si based luminescent device based on a controllable asymmetric quantum well structure doping with voltage barrier and a preparation method thereof, which belongs to the technical field of nano-electronics and nano-photoelectronic device material. The luminescent device is deposited with an amorphous carborundum thin film doping with boron as a cavity barrier layer on a semiconductor substrate; the cavity barrier layer is deposited with an nc-Si film which is generated by the anneal of an amorphous silicon film and is used as a luminescent active layer; the luminescent active layer is deposited with an amorphous silicon dioxide thin film doping with phosphor which is used as an electronic barrier layer; the electronic barrier layer is deposited with a conductive film which is left with an optical window and used as the cathode of the luminescent device, while the back side of the semiconductor substrate is deposited with a conductive film which is used as the anode of the luminescent device. The technical process of the invention relates to that a multi-layer film with the quantum well structure is prepared; then annealing and crystallization are processed and the electrodes of the device are prepared. The luminescent device has the advantages of high efficient and balanced current carrier injection structure and the Si / SiO2 luminescent system, which provides the possibility of the realization of a high efficient Si-based luminescent device.

The invention discloses a quantum dot light-emitting layer, a preparation method thereof and a quantum dot device. The quantum dot light-emitting layer comprises at least one quantum dot composite structure, the quantum dot composite structure comprises a first quantum dot layer, a first polymer bridging layer and a second quantum dot layer arranged in sequence, or the quantum dot composite structure comprises a first polymer bridging layer, a first quantum dot layer and a second quantum dot layer set arranged in sequence, and the first polymer bridging layer and the adjacent quantum dot layers are connected by acting force. The quantum dot light-emitting layer of the invention combines quantum dots of different functions in a layered manner, so that the hole injection capability and electron injection capability of the quantum dots on two sides of the quantum dot light-emitting layer can be separately adjusted according to actual needs, the balance of the carrier injection of the quantum dot light-emitting layer is facilitated when the quantum dot light-emitting layer is applied to a QLED device, and therefore, the efficiency and life of the QLED device are improved.

The invention discloses an inorganic perovskite light emitting diode and a preparation method thereof. According to the method, a passivation layer (PVP) not only can improve the surface morphology ofthe perovskite and reduce the leakage current of the light emitting diode, but also can passivate surface defects of zinc oxide (ZnO), reduce the non-radiative recombination at the interface betweenthe perovskite and the zinc oxide and thus improve the radiative recombination efficiency, and can also improve the injection balance between electrons and holes at the same time. In addition, a composite perovskite light emitting material (Cs0.87MA0.13PbBr3) which is almost hole-free and very compact can be obtained by doping a small amount of MABr into CsPbBr3, thereby being also capable of effectively suppressing the generation of a non-radiative recombination center of elementary lead in CsPbBr3 while reducing the leakage current. The external quantum efficiency of the perovskite light emitting diode can be effectively improved according to the invention.

The invention discloses a quantum dot, a preparation method thereof, a quantum dot light-emitting device and related devices. The outermost shell layer of the quantum dot provided by the invention isa hole transport material, so that the quantum dot with the structure can be applied to the preparation of a QLED (Quantum dot Light-Emitting Diode) device. On the one hand, the hole transport material on the outermost layer of the quantum dot can serve as a hole transport layer in the QLED device, thereby reducing the process of independently manufacturing the hole transport layer, and effectively simplifying the device structure and the technological process; and on the other hand, the hole transport material on the outermost layer of the quantum dot is contacted with an electron transport layer in the QLED device to serve as an electron blocking layer, thereby being capable of blocking part of the electron transmission. The quantum dot disclosed by the invention solves a problem that electrons are enabled to become majority carriers in the QLED device due to more efficient electron transport in the prior art, thereby effectively promoting the electron-hole injection balance, and improving the efficiency and life of the QLED device.

The invention discloses a preparation method of quantum dots, wherein the preparation method comprises the steps: preparing ZnCdSe seed crystals, growing a ZnSe transition layer on the ZnCdSe seed crystals, and sequentially coating the ZnSe transition layer with a ZnSe shell layer and a ZnS shell layer. The invention also discloses the quantum dots prepared by the preparation method. Through the arrangement of the ZnSe transition layer, the relationship between a core and the shell layers is consolidated, the transition between the core and each shell layer is effectively controlled, and the defects between crystal lattices are reduced; the formation of other seed crystals in the quantum dots is inhibited through fatty acid so as to control the components, size and uniformity of the seed crystals of the quantum dots, anions are supplemented to carry out growth nucleation of the seed crystals, a quantum dot core structure with the ZnSe transition layer on the surface is formed, and then epitaxial growth of the ZnSe shell layer and the ZnS shell layer are sequentially carried out; lattice stress between components of the mixed crystal structure core and lattice stress between the core and the shell are reduced, and the prepared quantum dots are adjustable in peak position in visible light, narrow in half-peak width and high in quantum efficiency.

The invention provides a benzo-carbazole compound and an organic light-emitting device thereof, belongs to the technical field of organic light-emitting materials, and solves the problems of low light-emitting efficiency and short service life of a device in the prior art. Carrier injection balance is improved by adjusting groups R1, R2, Ar1 and Ar2 on benzo-carbazole, and the recombination rate of electrons and holes on a light-emitting layer is increased. The organic light-emitting device prepared by the benzo-carbazole compound, particularly a main material serving as the light-emitting layer of the organic light-emitting device has the advantages of higher light-emitting efficiency and obviously prolonged service life, and the organic light-emitting device is superior to an existing common OLED (organic light emitting diode) device.

The invention provides bicarbazole derivatives and an organic light emitting device thereof, and belongs to the technical field of organic light emitting materials. The bicarbazole derivatives solve technical problems in the prior art that luminous performance is poor, for example, luminous efficiency is low, and service life is short. According to the invention, 3 and 3' positions of two carbazole structures are connected to form a bicarbazole structure, charge carrier injection balance is improved through adjusting groups of R1, R2, Ar1, and Ar2, and the recombination ratio of electrons andelectron holes in a luminous layer is improved. The bicarbazole derivatives provided by the invention can be used for the organic light emitting device, and especially used as host materials of a luminescent layer in the organic light-emitting device to exhibit the advantages of higher luminous efficiency and obviously-increased service life; and the organic light emitting device provided by the invention is superior to a current common OLED (organic light emitting diode) device.

The invention provides ink. On the basis that the total weight of the ink is 100%, the ink is prepared from the following components by weight percent: 0.01-5.0% of magnetic nanoparticles, 0.01-30.0%of an electrode material and 65.0-99.0% of an organic solvent. The ink provided by the invention is formed by adding the magnetic nanoparticles into the electrode material and dispersing into the organic solvent, so that the magnetic nanoparticles are contained in a magnetic electrode formed by the ink-jet printing of the ink. The magnetic nanoparticles have a long-range ordered magnetic moment, and the movement of a carrier is subject to magneton, phonon and ferromagnetic / nonmagnetic interface scattering effect, so that the migration rate of the carrier is changed, and the carrier injection balance in a device is improved.

The invention provides a terpolymer and an electric storage device prepared by using the terpolymer as an organic layer. The prepared electric storage device is low in turn-on voltage, high in switchcurrent ratio, rapid in response, capable of performing repeated cyclic reading and writing, and excellent in performance. The terpolymer is simple in synthesis method and stable in electric storage device preparation process, has ternary electric storage performance, can realize industrial production, and has a good application prospect in the field of information storage.

The invention provides ink. On the basis that the total weight of the ink is 100%, the ink is prepared from the following components by weight percent: 0.01-30.0% of a magnetic carrier transport material and 70-99.9% of an organic solvent, wherein the magnetic carrier transport material has a core-shell structure, an inner core of the core-shell structure is prepared from magnetic nanoparticles, an outer shell of the core-shell structure is prepared from a carrier transport material, and the carrier transport material is an inorganic semiconductor material.

The invention belongs to the technical field of quantum dots, and particularly relates to an electrode and a QLED device. The electrode comprises an electrode material and a magnetic material, whereinthe electrode material is an anode material or a cathode material. The magnetic material in the electrode can adjust the carrier mobility; when the electrode material is an anode, the magnetic material can adjust the hole mobility, and when the electrode material is a cathode, the magnetic material can adjust the hole mobility, so that the injection balance of carriers is improved; and therefore,when the electrode is used for preparing the QLED device, the luminous efficiency and the stability of the device can be effectively improved.

The invention provides a fluorenyl terpolymer / ferric oxide nanoparticle composite material and a preparation method thereof. The composite material can be used for preparing an electric storage device. The electric storage device has the advantages of excellent ternary electric storage performance, low turn-on voltage, high switch current ratio, high storage density, quick response, repeated cyclic reading and writing and excellent performance. The preparation method of the fluorenyl terpolymer / ferric oxide nanoparticle composite material is simple; the preparation process of the electric storage device is stable, the operation is simple, and the fluorenyl terpolymer / ferric oxide nanoparticle composite material has a good application prospect in the field of information storage.

The invention belongs to the technical field of display, and particularly relates to an ink, a quantum dot film and a quantum dot light emitting diode. The ink comprises an organic solvent, quantum dots and a block copolymer, wherein the quantum dots and the block copolymer are dispersed in the organic solvent, the molecular general formula of the block copolymer is sulfydryl-polystyrene-A-R, A comprises a block chain as shown in a formula I and / or a formula II in the specification, R is an aliphatic group or an aromatic group, and in the formula I and the formula II, x and y are positive integers. The ink containing the specific block copolymer can improve the film-forming property and light emitting property of an ink-jet printing quantum dot light emitting semiconductor.

The invention belongs to the technical field of quantum dots, and particularly relates to a composite material and a QLED device. The QLED device comprises an anode, a quantum dot luminescent layer and a cathode that are stacked, an electronic functional layer is arranged between the cathode and the quantum dot luminescent layer, and the electronic functional layer contains an electronic functional material and a magnetic material, wherein the electronic functional material is an electron injection material or an electron transport material. According to the QLED device of the invention, sincethe electron mobility can be adjusted by the magnetic material, the injection balance of carriers can be improved, and therefore, the QLED device has excellent luminous efficiency and stability.

The invention discloses a composite material, a preparation method thereof and a quantum dot light-emitting diode. The preparation method of the composite material comprises the steps that a quantum dot solution is provided, the surfaces of quantum dots are combined with first ligands, and the first ligands are organic ligands containing carboxyl; a ligand solution in which a second ligand is dispersed is provided, the second ligand is polyaniline, and a solvent of the ligand solution and a solvent of the quantum dot solution are mutually soluble; and the quantum dot solution is mixed with the ligand solution, and carrying out ligand exchange reaction on the surfaces of the quantum dots to obtain the composite material. The polyaniline and the quantum dots are combined together, on one hand, the hole transmission capacity of the quantum dot light-emitting layer is improved through the hole transmission capacity of the polyaniline, and injection balance of carriers is improved; and on the other hand, polyaniline serves as a surface ligand of the quantum dots, agglomeration of the quantum dots can be reduced, electron injection can be hindered, injection balance of carriers is further improved, and the device performance is improved.

The invention belongs to the technical field of display, and particularly relates to an ink, a quantum dot film and a quantum dot light emitting diode. The ink comprises an organic solvent, quantum dots and a block copolymer, wherein the quantum dots and the block copolymer are dispersed in the organic solvent, the molecular general formula of the block copolymer is sulfydryl-polystyrene-A-R, A comprises a block chain as shown in a formula I and / or a formula II in the specification, R is an aliphatic group or an aromatic group, and in the formula I and the formula II, x and y are positive integers. The ink containing the specific block copolymer can improve the process film-forming property and light emitting property of an ink-jet printing quantum dot light-emitting semiconductor.

The invention belongs to the technical field of quantum dots, and particularly relates to a QLED device and a preparation method thereof. The QLED device comprises an anode, a quantum dot light-emitting layer and a cathode which are arranged in a stacked mode; an electron adjusting layer is also arranged between the cathode and the quantum dot light-emitting layer; and the electron adjusting layercomprises a magnetic material. According to the QLED device, the electron adjusting layer containing the magnetic material is arranged between the cathode and the quantum dot light-emitting layer; due to the fact that when the magnetic material is used as an interface in the QLED device, the magnetic moments and orientation of the magnetic materials are different in size, so that different barrier heights need to be overcome when carriers pass through the interface, the change of the vacuum energy level is caused consequently, and the electron injection potential barrier can be reduced by changing the vacuum energy level, and therefore the carrier injection balance in the QLED device is improved, and the luminous efficiency and the stability of the device are further improved.

The invention discloses a quantum dot luminescent layer, a preparation method thereof and a quantum dot device. Wherein the quantum dot light-emitting layer includes at least one quantum dot composite structure, the quantum dot composite structure includes a first quantum dot layer, a first polymer bridging layer and a second quantum dot layer arranged in sequence, or the quantum dot composite structure includes a first quantum dot layer arranged in sequence The polymer bridging layer, the first quantum dot layer and the second quantum dot layer, the first polymer bridging layer is connected to the adjacent quantum dot layer through force. The quantum dot light-emitting layer of the present invention combines quantum dots with different functions in a layered manner, so that the hole injection ability and electron injection ability of the quantum dots on both sides of the quantum dot light-emitting layer can be adjusted respectively according to actual needs. When the dot light-emitting layer is applied to a QLED device, it is beneficial to balance the carrier injection of the quantum dot light-emitting layer, thereby improving the efficiency and life of the QLED device.

The invention belongs to the technical field of organic electrical storage materials, and discloses a terpolymer of an alkoxy group-containing triphenylamine donor group, an electrical storage device and the preparation thereof. The terpolymer has the following structure, wherein, R is an alkoxy group; R 1 is an alkyl group; m is an integer from 20 to 300; n is an integer from 20 to 300. The electrical storage device includes an organic layer, and the organic layer is the terpolymer; and also includes a substrate, a cathode and an anode. The invention also discloses the preparation method of the terpolymer and the electric storage device. The terpolymer of the invention has strong conjugation degree and hole transport ability, reduces the turn-on voltage, improves the switching current ratio, and improves the storage density, and the copolymer is easy to form a film. The prepared electrical storage device has low turn-on voltage, low energy consumption, high switching current ratio, high resolution, low misread rate, fast response, multiple cycles of reading and writing, and excellent performance.

The invention provides a nano material. The nano material is a nano material with a core-shell structure and comprises a NiO nano particle and a PEDOT shell layer which coats the surface of the NiO nano particle. According to the nano material with the core-shell structure provided by the embodiment of the invention, the surface of the NiO nano particle is coated with the PEDOT shell layer, and the PEDOT shell layer plays a role of a carrier, so that agglomeration among the NiO nano particle can be blocked, the nano particle with uniform size distribution is obtained, and the stability of the NiO / PEDOT core-shell nano material is improved. Meanwhile, the PEDOT has a lower empty orbital energy level relative to the NiO, so that after the NiO and the PEDOT are compounded, a relatively large number of electrons are transferred from the HOMO energy level of the NiO to the empty orbital of the PEDOT, thereby forming a large number of free holes and improving the hole transmission performance of the nano material.

The present invention provides a QLED, comprising a first electrode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a second electrode stacked in sequence, and the hole transport layer and the A first ferroelectric dipole moment material layer is arranged between the quantum dot light emitting layer; and / or a second ferroelectric dipole moment material layer is arranged between the quantum dot light emitting layer and the electron transport layer, wherein, The first ferroelectric dipole moment material layer and the second ferroelectric dipole moment material layer are material layers obtained by setting the dipole moment of the ferroelectric material with a preset external electric field.

The invention provides ink. On the basis that the total weight of the ink is 100%, the ink is prepared from the following components by weight percent: 0.01-15.0% of magnetic nanoparticles, 0.2-40.0%of a carrier transport material and 45.0-99.0% of an organic solvent, wherein the carrier transport material is prepared from an organic material.

The invention relates to the technical field of display, and provides a quantum dot light emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises an anode and a cathode which are oppositely arranged, a quantum dot light-emitting layer arranged between the anode and the cathode, and an electron transport layer arranged between the quantum dot light-emitting layer and the cathode. Wherein the electron transport layer contains an electron transport material and an active material, and the active material is selected from at least one of organic hydrocarbon with at least one hydrogen atom substituted by carboxyl, organic ester containing a carbon-carbon double bond or a carbon-carbon triple bond or a benzene ring, and unsaturated ketone. The positive aging effect of the quantum dot light-emitting diode is improved by introducing the active material into the electron transport layer.

The invention provides a carbazolyl conjugated polymer, and an electric storage device prepared by using the carbazolyl conjugated polymer as an organic layer. The device has excellent electric storage performance. The prepared electric storage device has the advantages of further reduced turn-on voltage, high switching current ratio, large storage density, quick response, repeated cyclic read-write and excellent performance. A synthesis method of the carbazolyl conjugated polymer is simple, the preparation process of the electric storage device is stable, the operation is simple, industrial production can be realized, and the prepared electric storage device shows ternary electric storage performance and has a good application prospect in the field of information storage.

The invention discloses a method for synthesizing quantum dots with a heterojunction structure, comprising: providing first quantum dots of a first conductivity type; forming second nanoparticles of a second conductivity type on the surface of the first quantum dots, and making The second nanoparticles cooperate with the first quantum dots to form a heterojunction. The invention also discloses a quantum dot light emitting diode device and a manufacturing method thereof, including the steps of manufacturing a first electrode, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a second electrode. Compared with the prior art, the present invention uses nanoparticles and quantum dots to form a heterojunction structure, which improves the matching degree and hole volume between the quantum dot layer and the hole transport layer, thereby improving the hole transport and hole volume of the QLED device , improve the recombination rate of electrons and holes, improve the injection balance of electrons and holes, make the QDs layer and the hole transport layer have a better combination, and solve the problem of QLED devices.

The invention relates to the technical field of display, and provides a quantum dot light emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises an anode and a cathode which are oppositely arranged, a quantum dot light-emitting layer arranged between the anode and the cathode, and an electronic function layer arranged between the quantum dot light-emitting layer and the cathode. The surface, adjacent to the cathode, of the electronic functional layer is treated by an active material, or an interface layer is arranged between the electronic functional layer and the cathode, and the material of the interface layer contains the active material. Wherein the active material is selected from at least one of organic hydrocarbon with at least one hydrogen atom substituted by carboxyl, organic ester containing a carbon-carbon double bond or a carbon-carbon triple bond or a benzene ring, and unsaturated ketone. According to the invention, the active material is introduced into the quantum dot light-emitting layer, so that the positive aging effect of the quantum dot light-emitting diode is improved.