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Ink and preparation method thereof

An ink and carrier technology, applied in ink, semiconductor/solid-state device manufacturing, application, etc., can solve the problem of unbalanced carrier injection, affecting the luminous efficiency and stability of the device, and achieve the improvement of device performance and carrier performance. Carrier injection balance, effect of improving injection balance

Pending Publication Date: 2019-10-01
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The ink and its preparation method aim to solve the problem of unbalanced carrier injection in existing light-emitting diode devices, thereby affecting the luminous efficiency and stability of the device

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0045] Another aspect of the embodiments of the present invention provides a method for preparing ink, comprising the following steps:

[0046] S01. Provide each component according to the formula of the above-mentioned ink;

[0047] S02. Disperse the magnetic carrier transport material in the organic solvent, or disperse the magnetic carrier transport material and a surfactant in the organic solvent to obtain an ink.

[0048] The preparation method of the ink provided in the embodiment of the present invention only needs to disperse the magnetic carrier transport material in an organic solvent, or disperse the magnetic carrier transport material and a surfactant in an organic solvent, and the operation is simple and easy to control. It does not require harsh conditions and can be mass-produced.

[0049] Specifically, in the above-mentioned step S01, the ink formula, the ratio of each component, the material and its preferred situation are as described above, and in order to ...

Embodiment 1

[0060] A method for preparing ink, comprising the steps of:

[0061] 0.1g of Fe 3 o 4 Disperse in a mixed solution of 30ml of ethanol and 20ml of deionized water by ultrasonic treatment for 1h, heat to 90°C, add 1.6mol / L triethanolamine and 0.02mol / L Zn(Ac) after 10min 2 2H 2 O solution, and continued to stir at 90 °C for 1 h, the brown product was collected and washed with deionized water to obtain the inner core as Fe 3 o 4 , the core-shell structure material with the outer shell of ZnO (Fe 3 o 4 @ZnO).

[0062] Take 0.1g of Fe 3 o 4 @ZnO nanoparticles are dispersed in 80ml deionized water, 0.30g / 0.823mmol cetyltrimethylamine bromide, 1.00g, 28wt% concentrated ammonia solution, 60ml ethanol solution, and stirred for 0.5h to disperse uniform. Subsequently, 10 ml of ethylene glycol diacetate was added to the solution to adjust the surface tension of the solution, thereby obtaining a core-shell magnetic N-type semiconductor composite ink.

Embodiment 2

[0064] A QLED device, including the following material layers sequentially stacked and combined: ITO / PEDOT:PSS (poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid) / TFB / green QDs (quantum dots) / Fe 3 o 4 @ZnO / Al electrode.

[0065] The preparation method of the QLED device is:

[0066] Provide an ITO substrate, and sequentially prepare a PEDOT:PSS layer, a TFB layer, and a green QDs layer on the ITO substrate;

[0067] The core-shell magnetic N-type semiconductor composite ink prepared in Example 1 is printed on the green QDs layer by an inkjet printing device as an electron transport layer;

[0068] An Al electrode is prepared on the electron transport layer.

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Abstract

The invention provides ink. On the basis that the total weight of the ink is 100%, the ink is prepared from the following components by weight percent: 0.01-30.0% of a magnetic carrier transport material and 70-99.9% of an organic solvent, wherein the magnetic carrier transport material has a core-shell structure, an inner core of the core-shell structure is prepared from magnetic nanoparticles, an outer shell of the core-shell structure is prepared from a carrier transport material, and the carrier transport material is an inorganic semiconductor material.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to an ink and a preparation method thereof. Background technique [0002] Quantum Dot Light Emitting Diodes (Quantum Dot Light Emitting Diodes QLED) is a light-emitting device based on inorganic nanocrystal quantum dot materials. A strong contender for next-generation display technology. [0003] In a QLED device, the movable holes are usually transferred from the anode to the light-emitting layer through the hole injection and transport layer, and recombine with the electrons transferred from the cathode through the electron injection and transport layer to form excitons, and then the excitons radiate and emit photons. The problem of carrier balance has become an important factor affecting the luminous efficiency of QLED devices, especially multilayer QLED devices. However, it is worth noting that too many holes or electrons will generate a three-particle system, which will caus...

Claims

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Application Information

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IPC IPC(8): C09D11/30C09D11/38H01L51/50H01L51/56
CPCC09D11/30C09D11/38H10K71/135H10K50/115H10K71/00
Inventor 王雄志向超宇朱佩
Owner TCL CORPORATION
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