The invention relates to a dual-layer
perovskite light emitting diode and a preparation method therefor. The dual-layer
perovskite light emitting diode comprises the following components from the bottom up separately: ITO conductive glass is used as a positive
electrode; a layer of poly 3, 4-ethylenedioxythiophene-polystyrolsulfon acid (PEDOT-PSS) with a thickness of about 20nm is used as a
hole transport layer; a dual-layer
perovskite light emitting layer is prepared by a spin-
coating method in two times; the adopted dual-layer perovskite light emitting layer can be perovskite with different
halogen ratios; a layer of
calcium-doped
zinc oxide (Ca:ZnO) with the thickness of about 50nm is spin-coated on the perovskite layer to be used as an
electron transport layer; and finally
metal calcium and aluminum are evaporated to be used as a negative
electrode. According to the dual-layer perovskite
light emitting diode and the preparation method therefor, on one hand, by regulating and controlling the Ca concentration in the Ca:ZnO, an optimal
band gap is obtained, so that the barrier between the
electron transport layer and the perovskite is reduced, and the
cut-in
voltage of the light emitting
diode is lowered consequently, and the light emitting efficiency and internal
quantum efficiency of the light emitting
diode are improved at the same time; and on the other hand, by regulating the
halogen ratios in the perovskite,
light emission with different colors can be realized.