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Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in the manufacturing/processing of organic light-emitting devices, organic light-emitting devices, semiconductor/solid-state device manufacturing, etc. , the effect of high flexibility

Inactive Publication Date: 2017-10-20
广州琉芯光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, at present, quantum dot light-emitting diodes are mostly spin-coated on the surface of conductive substrates layer by layer by spin-coating evaporation method, which is not only cumbersome, but also difficult to ensure uniformity in a large area

Method used

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  • Quantum dot light-emitting diode and preparation method thereof

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preparation example Construction

[0026] The invention provides a method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0027] (1) The mixed organic solution comprising polyethylenedioxythiophene and polystyrene sulfonate, the organic solution comprising triphenyldiamine polymer, the organic solution comprising quantum dots and the organic solution comprising zinc oxide are sprayed The ink printing method sequentially prints on the surface of the conductive substrate to obtain the primary quantum dot light-emitting diode;

[0028] The mass ratio of polyethylenedioxythiophene and polystyrenesulfonate to the organic solvent in the mixed organic solution comprising polyethylenedioxythiophene and polystyrenesulfonate is (10-15):100;

[0029] The volume ratio of the total mass of the triphenyldiamine polymer to the organic solvent in the organic solution comprising the triphenyldiamine polymer is (5-10) mg: (1-2) mL;

[0030] The volume ratio of the mass of quantum dots in the ...

Embodiment 1

[0057] Mix Poly-TPD and chlorobenzene at a ratio of 6mg / ml to get Poly-TPD ink; mix quantum dot n-hexane solution at a ratio of 5mg / ml to get quantum dot ink; mix ZnO and ethanol at a ratio of 10mg / ml Prepared to obtain zinc oxide ink; PEDOT:PSS and ethanol are prepared in 12.5% ​​ratio to obtain PEDOT:PSS ink, wherein the mass ratio of PEDOT and PSS is 5:20;

[0058] Fill the obtained PEDOT:PSS ink, Poly-TPD ink, quantum dot ink and zinc oxide ink into the ink cartridge in sequence, and use computer control to perform inkjet printing layer by layer on the surface of ITO conductive glass according to the preset pattern. After inkjet printing, it is left to stand still, and the organic solvent in the ink is volatilized during the static process, and a 0.01mm thick hole injection layer, a 0.01mm hole transport layer, a 0.01mm quantum dot light emitting layer and a 0.01mm electron transport layer are obtained. Quantum dot light-emitting diode; wherein, the volume ratio of the spr...

Embodiment 2

[0061] Mix Poly-TPD and chlorobenzene at a ratio of 6mg / ml to obtain Poly-TPD ink; prepare quantum dot n-hexane solution at a ratio of 15mg / ml to obtain quantum dot ink; prepare ZnO ethanol solution at a ratio of 10mg / ml After mixing, zinc oxide ink is obtained; PEDOT:PSS and ethanol are mixed according to a ratio of 12.5%, to obtain PEDOT:PSS ink, wherein the mass ratio of PEDOT and PSS is 5:20.

[0062]Fill the obtained PEDOT:PSS ink, Poly-TPD ink, quantum dot ink and zinc oxide ink into the ink cartridge in sequence, and use computer control to perform inkjet printing layer by layer on the surface of ITO conductive glass according to the preset pattern. After inkjet printing, it is left to stand still, and the organic solvent in the ink is volatilized during the static process, and a 0.02mm thick hole injection layer, a 0.02mm hole transport layer, a 0.02mm quantum dot light emitting layer and a 0.02mm electron transport layer are obtained. Quantum dot light-emitting diode;...

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Abstract

The invention provides a quantum dot light-emitting diode and preparation method thereof. The preparation method includes printing a mixed organic solution including poly(3,4-ethylenedioxythiophene) and polystyrolsulfon acid salt, an organic solution including a triphenyl diamine polymer, an organic solution including quantum dots and an organic solution including zinc oxide on a conductive substrate surface in sequence through an ink-jet printing method to obtain a primary quantum dot light-emitting diode; and depositing an electrode on the non-conductive substrate side of the obtained primary quantum dot light-emitting diode to obtain the quantum dot light-emitting diode. The preparation method realizes large-area simple preparation of quantum dot light-emitting diode by adoption of an ink-jet printing technology combined with a defined proportion of ink, and the operation is simple; and the ink used by the preparation method contributes to improvement of printing resolution, ensures uniformity of printing, and facilitates electric conduction light emission of the diode.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to a quantum dot light emitting diode and a preparation method thereof. Background technique [0002] Quantum dots are quasi-zero-dimensional nanomaterials composed of a small number of atoms. Quantum dots belong to inorganic semiconductor materials, which have more stable photochemical stability than organic materials, and can realize the regulation of fluorescence wavelength and emission spectrum by adjusting the size of quantum dots, and have excellent fluorescence quantum yield. Due to their excellent properties, quantum dots have attracted widespread attention and are widely used in the field of display technology. [0003] Quantum dot light-emitting diode (QLED) is a quantum dot organic light-emitting device that uses quantum dots as the light-emitting layer and can generate and emit light of any visible wavelength. Quantum dot light-emitting diodes have many a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K71/00
Inventor 纪丽珊张虚谷王凛烽蒋杰李丹阳张青松银子凯
Owner 广州琉芯光电科技有限公司
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