The invention relates to an aluminum
oxide CMP
polishing solution for rough
polishing of
silicon carbide wafers and a
polishing method of the aluminum
oxide CMP polishing solution, and the aluminum
oxide CMP polishing solution comprises the following components in percentage by weight: 2-10wt% of nano aluminum oxide
abrasive; 0.2 to 2 wt.% of a dispersant; 0.001 to 0.01 wt% of a pH
regulator; the concentration of the
oxidizing agent is 1-5wt.%. By adopting the compound oxidant,
potassium permanganate is utilized to oxidize a reduction product
manganese dioxide on the surface of the
silicon carbide wafer to activate
potassium persulfate, so that a large amount of
sulfate free radicals are generated in the polishing solution, the oxidability of the
sulfate free radicals is extremely high, the polishing solution can be promoted to generate chain oxidation reaction, and the surface of the
silicon carbide wafer is further oxidized; and an oxide layer with low
hardness is formed on the surface of the
silicon carbide and is finally removed under the mechanical action of the aluminum oxide
abrasive, so that the ultra-smooth and damage-free surface of the
silicon carbide wafer is formed. The
surface roughness of the obtained optimal
silicon carbide wafer is 0.125 nm, and the
material removal rate is 3.5 [mu] m / h. Compared with an existing aluminum oxide polishing solution, the polishing solution has the
advantage that the surface quality and the polishing efficiency of the silicon carbide wafer are remarkably improved.