The invention relates to a method for preparing a large-scale two-dimensional nanomaterial graphite, comprising the following steps of: plating a nickel film with the thickness of 100-300nm on the surface of monocrystal silicon, and then injecting carbon element into the nickel film by adopting an ion implantation mode; annealing for 15min-1h at a high temperature between 600 DEG C and 1,000 DEG C and a vacuum degree of from (10-5)Pa to 1Pa, and cooling to room temperature so that carbon atoms are separated out from the nickel film and recombined. Therefore, a layer of graphite film (the film thickness depends on various experiment parameters, such as carbon injection content, and the like) can be formed on the surface of the nickel film. When a sample is put into a FeCl3 solution, the nickel film can be corroded, and the graphite film can be separated out and floats on the surface of the liquid; and at the moment, the graphite film can be transferred away from the liquid with any substrate. Therefore, the large-scale graphite film with the size of several centimeters can be prepared.