607results about How to "Increase strain" patented technology

Systems and methods for noninvasive assessment of cardiac tissue properties and cardiac parameters using ultrasound techniques are disclosed. Determinations of myocardial tissue stiffness, tension, strain, strain rate, and the like, may be used to assess myocardial contractility, myocardial ischemia and infarction, ventricular filling and atrial pressures, and diastolic functions. Non-invasive systems in which acoustic techniques, such as ultrasound, are employed to acquire data relating to intrinsic tissue displacements are disclosed. Non-invasive systems in which ultrasound techniques are used to acoustically stimulate or palpate target cardiac tissue, or induce a response at a cardiac tissue site that relates to cardiac tissue properties and/or cardiac parameters are also disclosed.

The present invention provides devices and structures and methods of use thereof in electrochemical actuation. This invention provides electrochemical actuators, which are based, inter-alia, on an electric field-driven intercalation or alloying of high-modulus inorganic compounds, which can produce large and reversible volume changes, providing high actuation energy density, high actuation authority and large free strain.

An implantable vessel filter having an integrated sensing capability for monitoring the condition of the vessel filter. In one variation, the vessel filter comprises a plurality of legs that would themselves perform as a sensor device for detecting distention, which would indicate the presence of a clot or thrombus therein. A passive electrical circuit may be implemented on the vessel filter to receive electromagnetic energy and transmit signals indicative of the condition of the implanted vessel filter. In another variation, a miniaturized sensor is adapted for measuring the strain and/or other physical parameters of the filter legs.

A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer of improved epitaxial quality deposited on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 10<5>, nitrogen source material partial pressure in a range of from about 1 to about 10<3 >torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 10<2 >microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.

The present invention relates to a method of measuring motion of an object such as a heart by magnetic resonance imaging. A pulse sequence is applied to spatially modulate a region of interest of the object and at least one first spectral peak is acquired from the Fourier domain of the spatially modulated object. The inverse Fourier transform information of the acquired first spectral-peaks is computed and a computed first harmonic phase image is determined from each spectral peak. The process is repeated to create a second harmonic phase image from each second spectral peak and the strain is determined from the first and second harmonic phase images. In a preferred embodiment, the method is employed to determine strain within the myocardium and to determine change in position of a point at two different times which may result in an increased distance or reduced distance. The method may be employed to determine the path of motion of a point through a sequence of tag images depicting movement of the heart. The method may be employed to determine circumferential strain and radial strain.

The present invention recites a new method for manufacturing Group III-N field-effect devices, such as HEMT, MOSHFET, MISHFET devices or MESFET devices, grown by Metal-Organic Vapor Phase Expitaxy, with higher performance (power), by covering the surface with a thin SiN layer on the top AlGaN layer, in the reactor where the growth takes place at high temperature, prior cooling down the structure and loading the sample out of the reactor, as well as a method to produce some HEMT transistors on those heterostructures, by depositing the contact on the surface without any removal of the SiN layer by MOCVD. The present invention recites also a device.

This invention discloses a new technology related to cellulose fiber reinforced cement composite materials using the loaded cellulose fibers. This invention discloses four aspects of the technology: fiber treatment, formulation, method and final product. This technology advantageously provides fiber cement building materials with the desirable characteristics of reduced water absorption, reduced rate of water absorption, lower water migration, and lower water permeability. This invention also impart the final products improved freeze-thaw resistance, reduced efflorescence, reduced chemical dissolution and re-deposition, and improved rot and fire resistances, compared to conventional fiber cement products. These improved attributes are gained without loss in dimensional stability, strength, strain or toughness.

Novel gels and articles are formed from one or more copolymers having at least one poly(ethylene) components and high levels of one or more plasticizers, said gels having an amount of crystallinity, glassy components, and selected plasticizers sufficient to achieve improvements in one or more physical properties including improved crack propagation resistance, improved tear resistance, improved resistance to fatigue, resistance to catastrophic failure, and exhibiting high strain under elongations not obtainable in amorphous gels which high strain making the gel suitable for use as film layers for artificial muscles.

Devices, kits and methods described herein may be for wound healing, including the treatment, amelioration, or prevention of scars and/or keloids by applying and/or maintaining a pre-determined strain in an elastic skin treatment device that is then affixed to the skin surface using skin adhesives to transfer a generally planar force from the bandage to the skin surface. Applicators are used to apply and/or maintain the strains, and some of the applicators are further configured to provide at least some mechanical advantage to the user when exerting loads onto the skin treatment device.

An inventive energy harvesting apparatus may include a ferromagnetic material and/or a shape memory alloys to convert thermal energy to mechanical energy to electrical energy. The apparatus is subjected to a thermal gradient to cause beams to bend thus creating stress/strain in a piezoelectric material, or creating magnetic flux in a magnetic path. The charges created in this process can be transferred to electrical batteries.

Provided is lithium secondary battery comprising a cathode, an anode, and an electrolyte or separator-electrolyte assembly disposed between the cathode and the anode, wherein the anode comprises: (a) a foil or coating of lithium or lithium alloy; and (b) a thin layer of a high-elasticity polymer disposed between the foil/coating and the electrolyte (or separator-electrolyte assembly), having a recoverable tensile strain no less than 2%, a lithium ion conductivity no less than 10⁻⁶ S/cm at room temperature, and a thickness from 1 nm to 10 μm, wherein the high-elasticity polymer contains a cross-linked network of polymer chains having an ether linkage, nitrile-derived linkage, benzo peroxide-derived linkage, ethylene oxide linkage, propylene oxide linkage, vinyl alcohol linkage, cyano-resin linkage, triacrylate monomer-derived linkage, tetraacrylate monomer-derived linkage, or a combination thereof in the cross-linked network of polymer chains.

Recesses are formed in the drain and source regions of an MOS transistor. The recesses are formed using two anisotropic etch processes and first and second sidewall spacers. The recesses are made up of first and second recesses, and the depths of the first and second recesses are independently controllable. The recesses are filled with a stressed material to induce strain in the channel, thereby improving carrier mobility. The widths and depths of the first and second recesses are selectable to optimize strain in the channel region.

The present invention provides a dynamic stabilization device positionable about a portion of a spinal column. The stabilization device may generally include a first component and a second component, where the first and second components are movably coupled to one another to define an arcuate path of motion. The stabilization device may also include one or more adjustment elements positionable within first and second adjustment openings to affect the path of motion between the first and second components and/or the behavior and characteristics of the movement. In addition, one or more resistive elements may be adjustably positionable within either and/or both of the first and second adjustment openings to provide resistance and/or dampening of the forces experienced as the first and second components move relative to one another. The stabilization device may further define a joint having three degrees of freedom to adapt to movement of a spinal column.

Disclosed are DNA segments encoding <DEL-S DATE="20010821" ID="DEL-S-00001">hyaluronic acid synthase which are employed to construct recombinant cells useful in the production of hyaluronate synthase or hyaluronic acid (HA)<DEL-E ID="DEL-S-00001"> <INS-S DATE="20010821" ID="INS-S-00001">the recombinant DNA segment identified in FIG. 5. <INS-E ID="INS-S-00001">In preferred aspects, chromosomal DNA from Streptococcus equisimilis is partially digested with EcoRI and the resultant fragments are ligated to form recombinant vectors. These vectors are useful in the transformation of host cells such as E. coli and or Streptococcal hosts. <DEL-S DATE="20010821" ID="DEL-S-00002">Resultant transformants are screened by the novel screening assays to identify colonies which have incorporated HA synthase DNA in a form that is being actively transcribed into the corresponding HA synthase enzyme. These colonies may be selected and employed in the production of the enzyme itself or its product, HA.<DEL-E ID="DEL-S-00002"> <INS-S DATE="20010821" ID="INS-S-00002">The recombinant DNA segment identified in FIG. 5 is then inserted into a recombinant Streptococcal host for the production of hyaluronic acid (HA).<INS-E ID="INS-S-00002">

Provided is anode active material layer for a lithium battery, comprising multiple particulates of an anode active material, wherein a particulate is composed of one or a plurality of particles of a high-capacity anode active material being embraced or encapsulated by a thin layer of a high-elasticity polymer having a recoverable tensile strain no less than 10% when measured without an additive or reinforcement, a lithium ion conductivity no less than 10^-5 S/cm at room temperature, and a thickness from 0.5 nm (or a molecular monolayer) to 10 μm (preferably less than 100 nm), and wherein the high-capacity anode active material has a specific lithium storage capacity greater than 372 mAh/g (e.g. Si, Ge, Sn, SnO₂, Co₃O₄, etc.).

A solder joint comprising a solder capture pad on a substrate having a circuit; and a lead free solder selected from the group comprising Sn—Ag—Cu solder and Sn—Ag solder adhered to the solder capture pad; the solder selected from the group comprising between 0.1 to 2.0% by weight Sb or Bi, and 0.5 to 3.0% Ag. Formation of voids at an interface between the solder and the solder capture pad is suppressed, by including Zn. Interlayer dielectric delamination is suppressed, and electromigration characteristics are greatly improved. Methods for forming solder joints using the solders.

A semiconductor structure of strained MOSFETs, comprising both PMOSFETs and NMOSFETS, and a method for fabricating strained MOSFETs are disclosed that optimize strain in the MOSFETs, and more particularly maximize the strain in one kind (P or N) of MOSFET and minimize and relax the strain in another kind (N or P) of MOSFET. A strain inducing CA nitride coating having an original full thickness is formed over both the PMOSFETs and the NMOSFETs, wherein the strain inducing coating produces an optimized full strain in one kind of semiconductor device and degrades the performance of the other kind of semiconductor device. The strain inducing CA nitride coating is etched to a reduced thickness over the other kind of semiconductor devices, wherein the reduced thickness of the strain inducing coating relaxes and produces less strain in the other MOSFETs.

A mechanical splice fiber optic connector installation tool operable for performing splice terminations and verifying an acceptable splice termination includes a power source, a connector holder, an integrated Visual Fault Locater having an optical transmission element and a display for displaying the status of the termination. An adapter configured to receive the connector and align the connector with the optical transmission element, such that the optical transmission element is spaced apart from the connector at a predetermined distance and is in optical communication with the connector for propagating light energy through the adapter and along the stub optical fiber to a termination area of the connector.

A method of forming a semiconductor device comprising providing a substrate comprising a first device region, implanting a source/drain region in the first device region, forming a strained capping layer on the source/drain region, super annealing and crystallizing the source/drain region, and removing substantially all of the strained capping layer is provided. The method further includes pre-amorphizing the source/drain region before the super annealing. The strained capping layer may further be formed on a pre-amorphized gate electrode, and the gate electrode is super annealed. The strain is generated and preserved after the removal of the strained capping layer.

By recessing drain and source regions, a highly stressed layer, such as a contact etch stop layer, may be formed in the recess in order to enhance the strain generation in the adjacent channel region of a field effect transistor. Moreover, a strained semiconductor material may be positioned in close proximity to the channel region by reducing or avoiding undue relaxation effects of metal silicides, thereby also providing enhanced efficiency for the strain generation. In some aspects, both effects may be combined to obtain an even more efficient strain-inducing mechanism.

A coaxial connector with a connector body is provided with a connector body bore. An annular coupling groove is provided in the connector body bore open to a cable end of the connector body. A clamp sidewall of the coupling grove is angled inward from a bottom of the coupling groove. A slip ring seated within the coupling body bore is provided with a grip surface. An annular compression body is positioned between the slip ring and a compression surface of the coupling body. The connector body and the coupling body are coupled together via threads. The slip ring is dimensioned for axial advancement of the coupling body along the threads to exert a compression force against the compression body to clamp a leading edge of the outer conductor between the slip ring and the clamp sidewall.