1407 results about "Electric properties" patented technology

The invention belongs to the technical field of copper-clad plates, and relates to a low-dielectric high-heat-resistance copper-clad plate and a preparation method thereof. By introducing the POSS resin, the dielectric constant of the copper-clad plate is effectively reduced, which is crucial for reducing signal delay and improving signal transmission efficiency. The introduction of the POSS resin not only improves the dielectric properties of the material, but also improves the glass transition temperature (Tg) of the material, which means that the physical and chemical properties of the material can be kept unchanged at a higher temperature, and the material is suitable for wider environmental conditions. By using the resin and the inorganic filler in a specific ratio, the copper-clad plate shows excellent copper foil peel strength, and ensures that the bonding force between the copper foil and the base material is not easily weakened under long-term use or severe conditions. Meanwhile, the material also has excellent CAF (conductive anode wire) resistance, can effectively prevent internal short circuit caused by moisture, and prolongs the service life of an electronic product.

The invention discloses an inertial microsystem thermal coupling analysis method based on a physical information neural network, and the method comprises the steps: S1, setting material parameters and boundary conditions of an inertial microsystem, and building a thermal coupling analysis model; s2, performing electrothermal coupling analysis to obtain temperature distribution of the inertial microsystem; s3, thermal stress distribution of the microsystem is obtained through thermal-mechanical coupling simulation analysis; s4, predicting a temperature field of the microsystem through the physical information neural network; s5, taking the temperature field as a boundary condition of mechanical simulation of the microsystem to obtain mechanical properties such as stress and strain of the microsystem; and S6, performing mechanical-electric coupling simulation analysis, and analyzing the influence of structural deformation on each parameter in electrical performance. According to the method, the neural network solving precision is improved through the improved adaptive weight strategy, the complete polynomial basis function is combined with the neural network, the state dimension is reduced by introducing the expansion basis function, the calculation cost and time are reduced, accurate prediction of the micro-system multi-moment temperature field is achieved, and the micro-system performance under electric heating power multi-physics field coupling is calculated.

The invention relates to the technical field of intelligent manufacturing, in particular to an HTCC ceramic defect automatic identification method based on industrial model assistance, which comprises the following steps: step 1, collecting sintering temperature gradient, lamination pressure and green body water content process parameters in the HTCC production process in real time; step 2, performing non-contact dielectric property scanning on the sintered HTCC substrate on a production line conveyor belt; 3, based on the coordinates of the dielectric abnormal region, controlling an annular polarization light source to inhibit the incident angle reflected by the metallization layer from irradiating the target region; 4, inputting the dielectric anomaly frequency band feature vector and the defect image texture feature in the step 3 into a cross-modal attention network to generate a fusion feature map; and 5, establishing an association mapping library of the defect type and the process deviation type. Through accurate real-time monitoring, intelligent defect identification and classification, automatic process adjustment and a continuously optimized feedback mechanism, the efficiency, quality and intelligent level of the ceramic production process are greatly improved.

The invention relates to a charge accumulation characteristic analysis method for a polyimide material, and the method comprises the steps: applying a multi-stress synergistic effect to the polyimide material based on the multi-stress state of the polyimide material in the electric field, temperature, mechanical stress and irradiation in a deep space environment; a dynamic charge migration model of the polyimide material under the multi-stress synergistic effect is constructed, and the charge accumulation characteristic of the polyimide material is analyzed. According to the invention, based on the multi-stress state of electric field, temperature, mechanical stress and irradiation of the polyimide material in a deep space environment, a multi-stress synergistic effect is applied to the polyimide material, so that the problem of distortion of traditional single-stress or pairwise combined stress measurement is solved; through a dynamic charge migration model, charge accumulation characteristics of the polyimide material under the action of an electric field, temperature, mechanical stress and irradiation are analyzed, and accurate prediction, regulation and control for researching the electrical performance of the polyimide material are realized.

The invention belongs to the technical field of dielectric materials, and particularly relates to a dielectric material based on polybenzocyclobutene as well as a preparation method and application of the dielectric material. According to the multi-benzocyclobutene-based dielectric material provided by the invention, different halogenated hydrocarbon, olefin and other raw materials are used, and on the basis of containing more than two benzocyclobutene groups, a specific group can be introduced into a connecting group so as to improve the dielectric property and thermal stability of the material; meanwhile, specific groups can be introduced into R2 and R3 through secondary Heck reaction to further improve the dielectric property and thermal stability of the material, so that the dielectric material with excellent comprehensive properties such as dielectric property and thermal stability is provided, and the technical problem of lack of dielectric materials for high-frequency and high-speed printed circuit boards (PCBs) in the prior art can be solved.

The invention discloses a method and system for testing the electrical performance of a semiconductor chip, and the method comprises the steps: building a mapping relation between dielectric loss and loss frequency through obtaining the dielectric loss data, internal material characteristics and dynamic load power factors of the chip under each frequency band, recognizing a loss abnormal region, and analyzing the influence of the loss abnormal region on the performance of the chip; correcting test data by adopting a minimum mean square error algorithm, and optimizing the impedance of the power supply network and the dynamic switching characteristic of a functional module; calculating the breakdown voltage distribution of each layer in the chip, identifying a high-voltage risk region, optimizing the voltage distribution by using a gradient descent algorithm, and dynamically adjusting the working voltage and current; power factor fluctuation is analyzed through a sliding window algorithm, an abnormal area is identified, a power factor is optimized through a PID algorithm, and the working state and transient response of a chip in a dynamic load are improved. According to the method, the problems of nonlinearity of high-frequency dielectric loss, non-uniform breakdown voltage distribution and unstable power factor response under a dynamic load are solved, and comprehensive and accurate evaluation and optimization of chip performance are realized.

The invention relates to a wave-absorbing honeycomb composite material with absorbents in spatial gradient distribution and a preparation method of the wave-absorbing honeycomb composite material, and belongs to the technical field of preparation of wave-absorbing materials. In combination with the characteristics of a multi-layer wave-absorbing honeycomb, wave-absorbing adhesive film layers with different electromagnetic properties are pressed into pores of a semi-cured honeycomb core material according to the electrical property design, and the electromagnetic properties change in a gradient manner along the pore direction to obtain an impedance matching structure; the wave-absorbing honeycomb is attached to the surface (curved surface) of a product or a mold for curing, and a heat-set wave-absorbing honeycomb core material is obtained; the upper surface and the lower surface are respectively bonded with the wave-transparent skin, so that the wave-absorbing honeycomb composite material with excellent performance is obtained, and the stealth requirement of curved-surface products is met. According to the wave-absorbing honeycomb composite material and the preparation method thereof, the process is easy to control, the wave-absorbing performance and the mechanical performance are excellent, the wave-absorbing honeycomb composite material can be used for curved surface forming, and the absorbent space gradient distribution is achieved, and the wave-absorbing honeycomb composite material has the excellent wave-absorbing performance in the ultra-wide frequency range.

The invention discloses spherical silicon dioxide, a high-frequency high-speed copper-clad plate and a preparation method of the spherical silicon dioxide. The dielectric constant Dk of the spherical silicon dioxide is 3.5 F / m-4. 0F / m, the dielectric loss Df is 0.0001-0.005, the amorphous state proportion is larger than or equal to 99%, the spheroidization rate is larger than or equal to 99%, and the porosity is 0.1%-2%. During preparation, the hydrolysis degree is controlled till partial polycondensation is achieved, then under the oxygen introduction condition, pre-oxidation is conducted at the low temperature to remove alkyl, gradient calcination is conducted at the high temperature, local crystallization influence and defect influence caused by powder spontaneous combustion are prevented, meanwhile, viscous bodies in the microspheres are accurately controlled to flow to fill nanoscale pores, and the particle size is reduced. The spherical silicon dioxide with high purity, high spheroidization rate and low dielectric loss is obtained, the dielectric property of the high-frequency and high-speed copper-clad plate can be met, and the high thermal stability and high reliability of the high-frequency and high-speed copper-clad plate are improved.

The invention discloses a mobile phone data line performance test and fault prediction method and system, and belongs to the technical field of electronic product detection and fault prediction. The power-on resistance, the voltage stability, the charging current response and the data transmission rate of a target data line are collected, and under the conditions of different bending angles, insertion and extraction cycles and environment temperatures, the data transmission rate of the target data line is calculated; acquiring stress response data, and extracting multi-dimensional stress principal component characteristics; the electrical property and stress data are fused, a performance degradation correlation model is established, and coupling modeling of data line internal structure damage and electrical property degradation is achieved; historical use data are input, analogue simulation is carried out through the model, and residual performance indexes are generated; judging whether a fault risk exists or not according to a set threshold value, and outputting early warning information if the fault risk is lower than the threshold value; meanwhile, a fault position and a mode type are inferred in combination with an internal characteristic spectrum of the model; the method has high prediction precision, strong structural adaptability and good expansibility, and is suitable for quality control and intelligent diagnosis of consumer electronic cable products.

The invention discloses an interface covalently bonded core-shell structure boron nitride polypropylene composite dielectric material and a method. The interface covalently bonded core-shell structure boron nitride polypropylene composite dielectric material comprises a maleic anhydride grafted polypropylene matrix and a core-shell structure filler dispersed in the maleic anhydride grafted polypropylene matrix, the core-shell structure filler comprises hydroxylated boron nitride nanoparticles covalently grafted on a polymer shell layer on the surface of the core-shell structure filler; the polymer shell layer is polyglycidyl methacrylate; the epoxy group of the polymer shell layer reacts with the anhydride group of the maleic anhydride grafted polypropylene matrix to form a covalent bond. The invention has the characteristics of strong interface bonding force, uniform filler dispersion, and excellent comprehensive electrical properties and processability.

The invention provides a surface modified carbon fiber as well as a preparation method and application thereof, and belongs to the technical field of battery materials. Physical or chemical treatment on the surface of the carbon fiber is realized by performing one or more of accurate plasma treatment, chemical etching, coupling agent treatment and nano particle deposition on the surface of the carbon fiber, so that functional groups are introduced or a rough nano structure is formed; a functional layer with a specific functional group and a rough structure which are beneficial to attachment of positive electrode material slurry are formed on the surface of the carbon fiber, and then a stable and well-attached surface modified layer is obtained through heat treatment, so that the surface modified carbon fiber is prepared. According to the method disclosed by the invention, the surface roughness and the functional group richness can be improved on the premise that the mechanical property of the fiber is not obviously damaged, so that the adhesiveness and the electrical property of the positive electrode material slurry are enhanced, and a foundation is laid for the preparation of a carbon fiber positive electrode material and a structure-energy storage integrated composite structure.

An additive manufacturing method based on micro-selective laser melting technology. By using a spot size of 30 μm or less, a metal powder layer thickness of 10 μm or less and ultrafine metal powders having a D90 particle size of 30 μm or less, and in combination with the control of a scanning laser power, a scanning rate, a linear energy density and a volumetric energy density within specific ranges, the method can print complex-structured metal parts having extremely high resolutions and surface smoothness, and can obtain a high-density internal structure of a component even under a relatively low energy density or power condition, thereby effectively protecting an optical system. Moreover, a printed component exhibits a defect-free microstructure, and has excellent electrical properties, thermal properties and mechanical properties. Particularly, ultrafine grains and a high dislocation density provide superior mechanical properties compared to conventional manufacturing materials. An infrared laser device can be used, thereby achieving low costs.

The invention relates to a degradable epoxy resin curing process regulation and control method based on dielectric parameter real-time monitoring, and the method specifically comprises the following steps: S1, weighing raw materials according to a ratio, and mixing the raw materials to obtain an epoxy resin prepreg; s2, pouring epoxy resin prepreg in the electric field module, and connecting a power supply to monitor dielectric parameters; s3, placing the epoxy resin prepreg with the sensor in a set curing process environment, carrying out a curing procedure, and calculating to obtain a change curve of dielectric parameter values of different materials along with time; s4, regulating and optimizing a curing process to obtain an optimized curing process; and obtaining a change curve of the conductivity value along with time. A more reasonable heating rate and a temperature platform are set, so that the curing process is more uniform, the stress concentration in the material is reduced, the formation probability of microdefects is reduced, the cross-linking reaction is more sufficient, the internal structure of the material is more stable, the density of a formed cross-linked network is higher, and the overall mechanical property and dielectric property are further improved.

The invention provides a p-type AgSbSe2-based thermoelectric material with low thermal conductivity and a preparation method and application thereof, the chemical composition of the p-type AgSbSe2-based thermoelectric material with low thermal conductivity is Ag1 + ySb1-x-yBixSe2, x is more than 0 and less than or equal to 0.09, y is more than or equal to 0.01 and less than or equal to 0.02, and x and y are the ratio of the amount of substance. The preparation method of the thermoelectric material comprises the following steps: performing vacuum tube sealing on Ag particles, Bi particles, Sb particles and Se particles according to the mass ratio, sintering the sealed quartz tube in a muffle furnace, and cooling to obtain an alloy ingot; and grinding the alloy ingot to obtain powder, and sintering the powder to obtain the p-type AgSbSe2-based thermoelectric material. The p-type AgSbSe2-based thermoelectric material with low thermal conductivity has good conductivity and Zebeck coefficient, and low lattice thermal conductivity at low temperature, and the thermoelectric performance of the thermoelectric material is significantly improved.

A sensing device and a method for sensing an electrical property of a test sample is provided. The sensing device includes a substrate, and a closed loop resonator and an open loop resonator arranged on the substrate, and are arranged in a cascade configuration, the open loop resonator including a first loop end and a second loop end arranged at an edge of the substrate and are configured to be in contact with the test sample. In this regard, the closed loop resonator is configured to couple in an input excitation and to transfer the input excitation towards the open loop resonator. Furthermore, the open loop resonator is configured to generate localized electric fields between the first loop end and the second loop end propagating through the test sample.

The purpose of the present invention is to provide a device and method for testing the millimeter wave dielectric properties of liquid crystal materials under electrical orientation, which belongs to the field of microwave testing technology. In the dielectric constant test of liquid crystal materials, the present invention designs a liquid crystal box composed of multiple layers of dielectrics, and innovatively uses multiple layers of dielectrics to form a top-bottom symmetrical TM 0n0 The mode double-sided circular patch resonator, and the electric field distribution inside it passes through the multi-layer medium to be tested and is perpendicular to the metal disc. Therefore, by utilizing its internal field distribution characteristics, the structure can use a mode with a higher resonant frequency, greatly broadening the test frequency range, and the test frequency can reach 110GHz. Therefore, the dielectric property test device of the present invention can realize the wide-band dielectric property test of liquid crystal materials in the millimeter wave frequency band, and the test device is simple and easy to implement.

The invention relates to a hollow silicon dioxide microsphere and a preparation method and application thereof, the hollow silicon dioxide microsphere has a dielectric constant less than or equal to 2.5, a dielectric loss tangent angle less than or equal to 0.001, a purity greater than 95%, a sphericity rate greater than or equal to 99%, a wall thickness greater than 0 and less than or equal to 0.42 [mu] m, and an average diameter of 0.1 [mu] m-5 [mu] m, and the hollow rate, the wall thickness and the average particle size satisfy a relational expression, eta is the hollow rate, t is the wall thickness, and R is 1 / 2 of the average particle size. The hollow silicon dioxide microspheres provided by the invention are high in spherical rate, firm in wall thickness, uniform in particle size distribution, high in purity, relatively excellent in dielectric property and extremely low in content of metal impurities, and can meet the application requirements of high-speed and high-frequency substrates, in addition, the preparation method provided by the invention is few in adopted raw materials, simple in preparation process, low in cost and high in efficiency.

The invention discloses a lead zirconate titanate film material with an ultrahigh voltage coefficient as well as a preparation method and application of the lead zirconate titanate film material, and belongs to the technical field of electronic material development and film materials. The preparation of the lead zirconate titanate film material is realized by adopting a sol-gel spin-coating method and controlling the annealing times. The piezoelectric film material provided by the invention can be directly deposited on a Si substrate coated with metal Pt, does not need to introduce an additional buffer layer or dope any element, is short in annealing time and simple in preparation process, all required raw materials are cheap and easy to obtain, and the piezoelectric film material particularly has high orientation degree, low coercive voltage and excellent ferroelectric and piezoelectric properties, is suitable for preparing large-size (2-4 inches) wafers, and has a wide application prospect. And huge application potential is shown in the field of piezoelectric micro-electro-mechanical system (MEMS) devices.

The invention belongs to the technical field of energy materials, relates to a thermoelectric material, and particularly provides a high-performance n-type PbS-based medium-entropy thermoelectric material and a preparation method thereof, which are used for solving the problem of poor thermoelectric performance of a PbS-based material in the practical application process of the thermoelectric field. The medium-entropy thermoelectric material PbS (1-x) Sex-yTey is obtained by performing solid solution on a designed amount of Se element and Te element in a PbS-based material, x is more than or equal to 0.48 and less than or equal to 0.5, y is more than or equal to 0.15 and less than or equal to 0.25, and the thermal conductivity of the PbS-based material is effectively reduced; the preparation method comprises the following steps: preparing a medium-entropy thermoelectric material PbS (1-x) Sex-yTey, performing gap doping on the medium-entropy thermoelectric material PbS (1-x) Sex-yTey with a designed amount of Cu element to optimize the carrier concentration, and finally obtaining the high-performance n-type PbS-based medium-entropy thermoelectric material, the room-temperature ZT value and the average ZT value of the material are up to 0.53 and 1.08 respectively, and the material has excellent thermoelectric performance; meanwhile, the high-performance n-type PbS-based medium-entropy thermoelectric material has the obvious advantage of low cost, and wide application of the thermoelectric technology is promoted.

The invention discloses a method for preparing an electrode slurry for a high-purity alumina electrostatic chuck, which belongs to the technical field of electrostatic chucks and comprises the following steps: S1: mixing metal Mo powder, an organic carrier and a ceramic powder in proportion and then ball milling them for a certain period of time, and obtaining a mixed powder A after mixed ball milling, wherein the ceramic powder is any one of AL2O3, MgO, SiO2, CaCO3 and CaO, or a mixture of any two or more of any two; S2: mixing the mixed material A with an organic solvent, a dispersant and the like in proportion, putting the mixed material A into a high-speed stirring device, grinding and stirring the mixed material A, and obtaining a dispersed mixture B; S3: putting the mixture B into a three-roll mill for rolling to obtain Mo slurry with required viscosity and fineness; during the rolling process, sampling and measuring the slurry fineness, and stopping the rolling until the fineness meets the requirements; S4: after the Mo slurry is obtained, measuring its viscosity and fineness to confirm that they are both within the required range; printing, laminating and sintering are performed on the ceramic green body, and measuring its resistance to confirm whether the electrical performance is qualified.

The invention discloses an Ag2Se-based thermoelectric material and a preparation method thereof, and belongs to the technical field of thermoelectric materials. The preparation method comprises the steps that Ag powder and Se powder are mixed and ground according to the molar ratio of (1.9-2.1): 1, and mixed powder is obtained; the mixed powder is subjected to cold pressing to form blocks, and prefabricated blocks are obtained; the prefabricated block is subjected to heat preservation for 20-120 minutes under the conditions that the pressure is 1-5 GPa and the temperature is 400-1000 DEG C, and an Ag2Se initial product is generated through reaction; crushing the primary product, and grinding into fine powder; and sintering the fine powder for 5-30 minutes under the conditions that the pressure is 1-5 GPa and the temperature is 300-900 DEG C, so as to obtain the composite material. The sample is prepared through high temperature and high pressure for the first time, the method is simple, operation is easy to control, the preparation period can be greatly shortened, and the energy utilization rate is increased; the electroacoustic transport performance of Ag2Se is effectively regulated and controlled by changing the pressure and the temperature, and finally the thermoelectric performance is effectively improved.

The invention belongs to the technical field of metal powder materials, and particularly relates to a method for coating nickel powder with barium titanate, which comprises the following steps: preparing an inner shell of nickel oxide and / or sulfide; dispersing the nickel powder with the inner shell in the dispersion liquid; sequentially adding a barium compound and a titanium compound into the dispersion liquid; the nickel powder with the inner shell and the barium compound and the titanium compound adsorbed on the surface is dried, and the barium compound and the titanium compound on the surface react to form a barium titanate coated outer shell; and dispersing the dried coated powder to form the barium titanate coated nickel powder with the double-shell structure. According to the nickel powder with the double-shell structure prepared by the technical scheme, the co-firing property of the nickel powder and a dielectric material is improved through the barium titanate shell of the outer shell, the combination degree of nickel and the dielectric material can be better improved through the nickel oxide and / or the nickel sulfide of the inner shell, and the dielectric property of the dielectric material is improved. Therefore, the yield of the nickel powder and the dielectric material in the process of preparing the electronic component is improved, and the electrical property of the electronic component is improved.

The invention discloses a method for accurately measuring the dielectric constant of a nonlinear insulating medium, and relates to the technical field of electrical insulation testing. In order to solve the technical defect that in the prior art, a measuring method capable of effectively eliminating the thickness influence and accurately obtaining the real dielectric constant of the nonlinear insulating medium does not exist, the technical scheme provided by the invention comprises the following steps: constructing an equivalent circuit model; collecting dielectric constant measurement values of the samples with different thicknesses, and performing relative dielectric constant testing on the samples with different thicknesses at a plurality of frequency points by using a broadband dielectric spectrometer to obtain data of dielectric constants changing along with the thicknesses; judging whether the dielectric constant has thickness dependence or not; if the thickness dependence exists, the dielectric constant measurement value is substituted into the equivalent circuit model for nonlinear fitting, and the real dielectric constant value of the material is extracted; and outputting a real dielectric constant. The method can be applied to dielectric property accurate measurement and insulation structure design analysis work of nonlinear insulation materials.

The invention relates to a metal oxide and application thereof. The metal oxide is of a face-centered cubic structure, the space group is Fd-3m, the lattice constant a of the metal oxide is # imgabs 0 # to # imgabs 1 #, and the tensile residual stress F1 in the metal oxide is 0.105 MPa to 5.51 MPa, or the compressive residual stress F2 in the metal oxide is 1.05 MPa to 8.6 MPa; the metal oxide is prepared by a spray pyrolysis method, and the pyrolysis rate K is 0.361 to 48.611. The metal oxide provided by the invention not only has relatively high crystallinity and stability, but also has high activity, and is beneficial to improving the intercalation of sodium ions or lithium ions when the positive electrode material is prepared, so that the comprehensive electrical property is improved.

The invention discloses a composite current collector and a forming process method and application thereof. The composite current collector is characterized in that one or more polymer curing layers are formed on a first metal layer through thermal evaporation or coating curing, and second metal layers are formed between the polymer curing layers and / or on the polymer curing layers through evaporation; the forming process method comprises the following steps: forming a polymer curing layer on a first metal layer through thermal evaporation or coating; and repeating thermal evaporation or coating curing and evaporation processes to form a multi-layer stacked structure. The resistivity of the composite current collector is effectively reduced, and the production efficiency of the composite current collector is improved; the metal layer is made of common metal materials in the market, sputtering points do not exist on the metal layer formed through evaporation, the polymer layer is formed through thermal evaporation or coating and then through electron beam or ultraviolet curing, the adhesive force between the metal layer and the polymer layer is effectively improved, and the problems that the electric performance of the composite current collector is reduced, and the service life of the composite current collector is prolonged are solved.

The invention relates to an electrical performance flexibility automatic testing device and method for initiating explosive devices, the device comprises a device control box and a feeding mechanism, a carrying mechanism, a visual mechanism and a testing mechanism which are arranged on the device control box, the mechanisms are electrically connected, and the feeding mechanism is used for stacking trays; the carrying mechanism moves to a grabbing point according to program setting, and parts are grabbed and rotated; the visual mechanism is used for reading two-dimensional codes or character information of the parts and can identify the number, distribution and angles of contact pins in the parts; the testing mechanism is used for testing the electrical performance of the initiating explosive device part. According to the invention, the whole process automation of the electrical performance test of the initiating explosive device part is realized, the automatic feeding and discharging can be realized, the product information can be efficiently and accurately identified, the electrical performance test can be performed, the labor cost can be saved, the process of the electrical performance test of the initiating explosive device is simplified, and the risks of manual missing detection, wrong detection and the like are reduced.

The invention discloses a composite positive electrode, a preparation method thereof and an all-solid-state battery. The composite positive electrode comprises a composite solid electrolyte and a positive electrode active material. The composite solid electrolyte comprises a first solid electrolyte and a second solid electrolyte, wherein the molecular structural formula of the first solid electrolyte is Li < 2 + > (4-a) < x > Zr < 1-x > A < x > Cl < 6-by > By; the second solid electrolyte is selected from one or more of sulfide solid electrolytes; the selection of the metal element A and the non-metal element B meets the condition that XIC * x + (1-x) * 1.687 is less than 1.6; and [(6-by) * 3.16 + y * Xp] / [(6-by + y) * (XIC * x + (1-x) * 1.687)] > = 1.9; wherein the valence state of the metal element A is + a, and the valence state of the non-metal element B is-b; xIC represents the electronegativity of the metal element A, and Xp represents the electronegativity of the non-metal element B. According to the invention, the material forming the composite positive electrode is selected based on the electronegativity of the contained elements, so that the stability and the electrical performance are improved.

The invention relates to the technical field of polypropylene compositions and modified polymer materials thereof, and discloses a high-performance polypropylene-based green energy-saving cable insulation layer composition which comprises an isotactic polypropylene matrix, a maleic anhydride grafted polyolefin elastomer distributed in a dispersed phase and an amide nucleating agent distributed on a non-polar phase interface, an anchoring structure is constructed on a phase interface through hydrogen bond interaction, a matrix molecular chain is induced to grow to form a radial needle-shaped crystal cluster penetrating through the phase interface, and a three-dimensional interpenetrating crystal bridging network is constructed. Through the crystal bridging network, interface deep traps are converted into continuous shallow trap diversion channels, charges are guided to migrate orderly, space charge accumulation is inhibited, and the three-dimensional interpenetrating crystal bridging network is constructed. And the steric effect generated by the interface anchoring structure cooperatively restrains the thermal expansion of the dispersed phase, so that the high-temperature dimensional stability and dielectric property of the material are improved.

The invention relates to the field of electronic material technology and lightning protection, in particular to a progressive impedance thin film material compatible with lightning protection / edge scattering control. The passive protection method based on the Faraday cage concept is applied to lightning stroke protection of a typical edge scattering suppression structure, the surface of the typical edge scattering suppression structure is covered with the whole full-covering periodic hollow impedance film, and the original electrical performance is not negatively influenced by setting the parameter value of each hollow pattern through calculation; and the lightning protection progressive impedance film can effectively guide away lightning current injected into the target body, so that the lightning current smoothly flows into the conductor to well protect the wave-absorbing material below the conductor, thereby achieving a good lightning protection effect and achieving the lightning protection effect at the same time. The method is simple in process, high in operability, easy to implement industrially and suitable for popularization.

The invention discloses a power type negative temperature coefficient thermistor and method for suppressing surge current, and relates to the technical field of negative temperature coefficient thermistors, the thermistor comprises a core body and pins, the pins are respectively arranged on electrodes on two sides of the core body by adopting a multi-contact-surface structure, and the pins are arranged on the two sides of the core body. The core body is made of a Mn-Co-Ni-La oxide with a nano composite gradient structure; the Mn-Co-Ni-La oxide with the nano-composite gradient structure determines the upper limits of core capabilities such as surge suppression, wide temperature stability and low power consumption of the thermistor, and the redesign of the pin is the key of performance transfer, so that the electrical properties (low contact resistance and high surge tolerance) of the Mn-Co-Ni-La oxide with the nano-composite gradient structure are not counteracted by structural defects; the arrangement of the bracket prevents the Mn-Co-Ni-La oxide with the nano-composite gradient structure from losing the effect due to heat accumulation and physical damage through thermal management and mechanical protection, and the three components supplement one another and cooperate with one another, so that the performance of the thermistor of the Mn-Co-Ni-La oxide with the nano-composite gradient structure is guaranteed.