116 results about "Electric properties" patented technology

This invention discloses a high-voltage ceramic capacitor with a reinforced concave structure, aiming to solve the problem of insufficient edge breakdown withstand voltage in traditional ceramic capacitors due to edge effects. The capacitor includes a ceramic core composed of a ceramic dielectric. Its innovation lies in the fact that the upper and lower electrode surfaces of the ceramic core are not planar, but rather form a concave structure that curves inward from the center, causing the ceramic body thickness to gradually increase from the center to the edge. This structure significantly improves the edge breakdown withstand capability through the synergistic effect of electric field homogenization and improved molding density. This invention significantly improves the power frequency withstand voltage of the capacitor to over 3.5kV per millimeter, while also exhibiting excellent comprehensive electrical performance such as low loss, high insulation, and high partial discharge initiation voltage. Furthermore, the manufacturing process is simple, does not increase volume, and has strong industrial applicability.

The application provides a base glass, a preparation method of the base glass, a glass powder, a granulation powder, a glass insulator and a temperature sensor glass sealing workpiece. 3 The base glass comprises BaO 50-80 parts, B2O3 5-30 parts, SrO 1-10 parts, SiO2 1-25 parts, Al2O3 1-15 parts, CaF2 0.1-10 parts, TiO2 0.1-5 parts, rare earth oxide 0.7-3.1 parts and Nb2O5 0.1-3 parts; the rare earth oxide comprises La2O3 and Y2O3. The glass raw material of the application is lead-free, has high strength and air tightness, the lead-free microcrystalline glass system meets the insulation requirement of high-temperature sensors under long-time high-temperature environment, is resistant to repeated temperature impact and will not crack, the electric property does not attenuate, the problem of high-temperature resistance of metal sealing parts is solved, and the performance requirements of high-temperature resistance and high insulation are met.

This invention relates to a method for assessing the defect risk of epoxy-impregnated paper bushing cores under rapid temperature rise conditions, belonging to the field of bushing core insulation condition assessment. This invention aims to solve the problem that existing technologies cannot assess the impact of bushing core defects on partial discharge and dielectric properties under rapid temperature rise scenarios. The technical solution includes: constructing a feature parameter dataset and determining defect classification thresholds; conducting performance parameter tests before and after rapid temperature rise; comparing and analyzing the defect discharge characteristic spectrum of the bushing core, the sensitivity of partial discharge under different voltage measurement methods, and the changes in high-voltage broadband dielectric spectrum characteristic parameters under cyclic voltage excitation; and finally achieving defect risk classification assessment. This invention can comprehensively assess the electrical performance reliability of bushing cores, effectively identify potential defect risks within the core, and provide technical support for the safe and stable operation of ultra-high voltage transmission systems under extreme temperature environments.

Provided are a test element group (TEG) device and a cryogenic intrinsic characteristic analysis method for quantitatively assessing impact of a high-k-based passivation layer on an electrical characteristic of a device in a two-dimensional (2D) field effect transistor (FET) structure. Herein, to analyze a FET device that includes a channel of a 2D material and a passivation layer of a high-k material, a first FET device in which the passivation layer is arranged in a first direction with respect to the channel and a second FET device in which the passivation layer is arranged in a second direction different from the first direction with respect to the channel may be prepared. The first and second charge amounts trapped in the passivation layers in the first and second FET devices, respectively, may be compared to assess quantitative impact of the shape of the passivation layer on the FET device.

This invention discloses a multi-physics in-situ testing platform for aramid-synthetic ester composite insulating materials. The method includes: pre-treating an aramid substrate by drying and impregnation to obtain a composite sample; clamping the sample between test electrodes; applying a stable and controllable temperature field and an electric field to the sample sequentially or simultaneously; and measuring the dielectric constant, dielectric loss factor, and conductivity of the sample in situ under stable thermo-electric coupling conditions. The testing platform includes test electrodes for clamping the sample, a temperature control module for applying the temperature field, an electric field loading module for applying and adjusting the electric field, and a data acquisition module for in-situ data collection. By optimizing the sample pre-treatment process and the synchronous loading control of multi-physics fields, this invention achieves high-precision and highly repeatable in-situ testing of the dielectric properties of materials under actual service conditions within a wide temperature and field strength range. It is particularly suitable for evaluating the performance evolution of composite insulating materials under thermo-electric coupling.

The application discloses a kind of electrical performance test method, testing device, testing system and storage medium, wherein, electrical performance test method is used to the combination of heterogeneous class carrier board, including: the PAD point in IC part to be tested is short-circuited to form a network;The electrical performance of the part except the middle point in network in network is tested in section.This electrical performance test method of the application improves the electrical performance test ability of the combination of heterogeneous class carrier board, and can provide new detection ideas for other products.

The present invention relates to an audio device with a housing, a microphone arm and a detector for determining an orientation of the microphone arm relative to the housing. The invention may advantageously be applied in audio devices having a microphone arm, such as headsets, earphones, hearing protectors and other audio devices used for sound pickup.The audio device comprises a housing, a microphone arm that is mechanically and movably connected to the housing, a microphone unit arranged at or in the microphone arm and configured to pick up sound from the environment of the audio device and provide a corresponding microphone audio signal, a signal processor arranged at or in the housing and configured to provide electric power to the microphone unit, and a flexible substrate extending in a length direction between a first end mechanically connected to the housing and a second opposite end mechanically connected to the microphone arm.The flexible substrate is configured to bend in dependence on the microphone arm moving relative to the housing and comprises one or more electrical conductors electrically connecting the microphone unit and the signal processor to convey the electric power from the signal processor to the microphone unit and / or the microphone audio signal from the microphone unit to the signal processor.The flexible substrate further comprises a bend sensor that is configured to change the value of an electric property in dependence on a bending of a first portion of the flexible substrate, and the audio device further comprises a bend detector electrically connected to the bend sensor and configured to estimate an orientation of the microphone arm relative to the housing in dependence on the value of the electric property of the bend sensor.Arranging the bend sensor at or in the flexible substrate may provide a both reliable and cost-effective estimation of the orientation of the microphone arm.

The application belongs to the technical field of electronic ceramic materials, and particularly relates to a high-performance Y5P type barium titanate-based ceramic material sintered in air atmosphere and a preparation method thereof. The ceramic material takes BaTiO3 as a main raw material, is supplemented with MgCO3, ZnO, MnCO3, ZrO2, Nb2O5 and La2O3 as composite modification additives, and after sintering in air atmosphere, the ceramic material forms a dense and uniform microstructure, has excellent dielectric properties: a dielectric constant (ε) is 2800-3500, a dielectric loss tangent (tan δ) is as low as 1.1% or below, a volume resistivity (ρ) is 1.0*10 12 Ω·cm or above, a content temperature change rate is-9.8%-+9.1% in a temperature range of-30 DEG C to 85 DEG C, and meets a Y5P type temperature characteristic standard (ΔC / C 25 ℃≤±10%). The material can realize high insulation resistance, low loss and stable temperature characteristics by being directly sintered in air, does not need a complex reduction and reoxidation process, is suitable for preparing ceramic capacitors with high reliability and low cost, and is particularly suitable for the fields of consumer electronics and industrial electronics with medium-high voltage and high stability requirements.

Provided is a semiconductor device that has favorable electrical properties. The present invention relates to a method for forming a metal oxide film including a first layer and a second layer. The method for forming a metal oxide film includes: a first step for forming the first layer using an atomic layer deposition method; and a second step for forming the second layer on the first layer using the atomic layer deposition method. In the first step, a first sequence is performed one or more times. In the second step, a second sequence is performed one or more times. The first sequence and the second sequence each include a first step for introducing a first precursor into a chamber and a second step of introducing a first reactant into the chamber. The first precursor contains a metal. The first reactant is an oxidizing agent. The duration of the second step in the first sequence is shorter than the duration of the second step in the second sequence.

The application provides a simulation method and device for the moisture aging electrical performance of a zinc oxide varistor, comprising: establishing a grain boundary micro-topology structure of the zinc oxide varistor, the grain boundary micro-topology structure comprising a plurality of conductive grains and grain boundaries between adjacent grains; establishing corresponding equivalent branches for the grain boundaries, mapping the grain boundary micro-topology structure into an electrical network model composed of a plurality of conductive nodes and equivalent branches; determining physical parameters representing moisture degradation according to a moisture aging test of the zinc oxide varistor, and updating the electrical network model by adjusting the physical parameters while keeping the grain boundary micro-topology structure unchanged to obtain the voltage-current characteristic curve and micro-current distribution under the corresponding moisture state. The application realizes quantitative correlation between the moisture degradation state and the micro-grain boundary electrical characteristics, thereby realizing high-precision simulation of the voltage-current characteristic curve and micro-current distribution under the corresponding moisture state, and significantly improving the physical authenticity of the simulation results.

The utility model relates to material identification equipment technical field, concretely relates to a material identification device, including the terminal equipment and collection equipment of electric property link, and the front side and the back side of terminal equipment are provided with main screen and vice screen respectively, collection equipment includes the collection board, the collection camera of alignment collection board is provided with in the top of collection board, the middle part positioning edge that is used for dividing the high side and low side of the upper side of collection board is provided with in the middle part of collection board, and the edge positioning strip that is parallel or perpendicular with middle part positioning edge is provided with in the position of the protruding arrangement of high side near the edge. The upper side of collection board is divided into high side and low side by middle part positioning edge, can when scanning the card or some small bill of small volume such as identity card, can make material edge alignment through the edge of material and make material edge alignment, and can be convenient for centering. When scanning this area larger material of A4 paper size or so, make material edge alignment through the edge of material and edge positioning strip alignment.

The application discloses a PZT-based textured piezoelectric ceramic and a phase transition assisted polarization preparation method and application thereof, and belongs to the technical field of piezoelectric materials. The preparation method comprises the following steps: preparing PMeN-PZT matrix powder; preparing a textured piezoelectric ceramic; and sequentially polishing the textured piezoelectric ceramic, sintering silver electrodes and performing phase transition assisted polarization to obtain the PZT-based textured piezoelectric ceramic; wherein the phase transition assisted polarization step is: heating the textured piezoelectric ceramic after sintering silver electrodes to a polarization temperature, the polarization temperature is higher than the trigonal-tetragonal phase transition temperature and lower than the Curie temperature, and the polarization is performed under a polarization electric field of 300 V / mm-1000 V / mm, then the polarization is naturally cooled to room temperature, and the electric field is removed. The technical problems of low piezoelectric / electromechanical / dielectric performance caused by insufficient polarization in traditional heating polarization and the technical problem that piezoelectric materials are difficult to have high piezoelectric performance and high Curie temperature at the same time are solved.

This utility model relates to a sensing device for analyzing the degree of aging and degradation of liquid or paste-like materials and the impurity content in the materials, and a wind power generation device. The sensing device includes: a vibration unit, which includes a crystal oscillator that applies shear vibration to the materials under an excitation voltage; a sensing unit, which includes at least one sensor composed of interdigitated electrodes arranged on the vibration unit to detect changes in the dielectric properties of the materials under shear vibration; and a calculation unit, which is communicatively connected to the vibration unit and the sensing unit, respectively. The calculation unit receives and processes a first signal from the vibration unit and a second signal from the sensing unit, and determines the aging and degradation of the materials and the impurity content in the materials based on the first and second signals.

The application provides application of a carbon-silicon composite component chiral heterojunction membrane in chiral molecule / ion sieving, and belongs to the technical field of membrane science and technology.The application has the following characteristics: the carbon-silicon composite component chiral heterojunction membrane is used to selectively recognize and sieve chiral molecules or ions by using the concentration difference driving force, and the carbon-silicon composite component chiral heterojunction membrane is composed of a macroporous anodic aluminum oxide array and a chiral mesoporous carbon-silicon composite nanomaterial.Compared with the prior art, the carbon-silicon composite component chiral heterojunction membrane has asymmetric chemical composition, asymmetric pore structure, asymmetric surface charge distribution and enhanced surface electric property, and is used to sieve chiral molecules or ions under the action of a concentration gradient, so that the operation is simple, the sieving effect is good, and the carbon-silicon composite component chiral heterojunction membrane has considerable application prospect in the field of chiral sieving.

To provide solid polyurethane particles with excellent flexibility, featuring low dielectric constant and low dielectric loss tangent. [Solution] The above problem is solved by using polyurethane particles having a dielectric loss tangent of 0.0001 to 0.01 at 10 GHz.

The present invention provides an electrostatic chuck having satisfactory electrical characteristics (discharge suppression, electrostatic characteristics, etc.). This electrostatic chuck (10) has a recess (12) in a placement surface (11), and is provided with: one or a plurality of electrodes (13) disposed along the placement surface (11); a base (14); and a dielectric layer (15) in which the electrodes (13) are stacked between the base (14) and the placement surface (11). The electrostatic chuck has a region in which the recess (12) and the electrodes (13) overlap in a plan view as seen from a direction perpendicular to the placement surface (11).

There is provided an electrophotographic photosensitive member, a process cartridge, and an image forming apparatus with superior electrical characteristics. The electrophotographic photosensitive member includes a conductive base and a photosensitive layer. The photosensitive layer is provided on the conductive base. The photosensitive layer contains a base material, a charge generation material, a dispersing aid, a hole transport agent, and an electron transport agent. The base material is a polyarylate resin having repeating units represented by the following formula (1), formula (2), formula (3), and formula (4), in which a content ratio of the repeating units represented by the formula (3) with respect to a total number of the repeating units represented by the formula (1) and formula (3) is greater than 0% and less than 20%. The charge generation material is titanyl phthalocyanine. The dispersion aid includes a compound represented by the following formula (5) or formula (6). The hole transport agent includes a compound represented by the following formula (7) or formula (8).

The invention discloses a medium-entropy high-temperature dielectric ceramic and a preparation method thereof, and belongs to the technical field of functional ceramics, the chemical general formula of the ceramic material is (RE1, RE2, RE3) 3Al5O12, RE1, RE2 and RE3 are three different trivalent rare earth ions, and the key characteristic is that the ion radiuses of the three rare earth ions respectively belong to a large range, a medium range and a small range. According to the design, controllable maximum lattice distortion is introduced, the ion and electron polarizability of the material is remarkably enhanced on the premise that a garnet single-phase structure is not damaged, so that the intrinsic dielectric constant of the material is improved, and the medium entropy design ensures excellent high-temperature phase stability and dielectric property temperature stability of the material. The prepared medium-entropy high-temperature dielectric wave-absorbing ceramic can work in a high-temperature environment of 0-800 DEG C, not only has the characteristics of low heat conductivity and high temperature resistance, but also has excellent wave-absorbing performance in an X wave band, the lowest reflection loss of the medium-entropy high-temperature dielectric wave-absorbing ceramic can reach-58 GHz, and the effective absorption bandwidth of the medium-entropy high-temperature dielectric wave-absorbing ceramic can reach 2.8 GHz.

The application discloses a preparation method of Bi-doped N-type PbSe-based thermoelectric material and belongs to the technical field of thermoelectric materials. PbSe-based nanoparticles are synthesized by doping with a heterogeneous element Bi through a solvothermal method, a small amount of a strong reducing agent N2H4H2O is additionally added to optimize the doping effect, bulk thermoelectric material is prepared by combining a hot-pressing sintering process, and is denoted as Pb 1‑ x Bi x Se-y, wherein y is the volume of 85% mass concentration N2H4H2O, and the unit is mL. The preparation of N-type PbSe-based thermoelectric material in a wide temperature range is realized by doping with the heterogeneous element Bi, the strong reducing property of hydrazine inhibits the hydrolysis or oxidation side reaction of Bi 3+ , the coordination effect can control the crystallization kinetics of the precursor, promotes the uniform doping of Bi in the PbSe crystal lattice, and significantly improves the effective doping concentration of Bi. The carrier concentration is greatly improved, and the thermoelectric performance of the PbSe-based thermoelectric material is significantly improved, and the ZT value of the obtained Pb 0.98 Bi 0.02 Se-0.2 sample thermoelectric material is 1.06 at 823 K. The process is simple, has the advantages of low energy consumption and short cycle compared with the traditional solid-phase melting method.

The application relates to the technical field of thermoelectric materials, in particular to a MnTe alloying-regulated AgSbTe2-based thermoelectric material and preparation and application thereof. Through the MnTe alloying strategy, local composition fluctuation and lattice distortion are induced in the AgSbTe2 matrix, sub-micron scale Ag2Te second phases and Mn-Te enrichment regions are formed, intrinsic Ag / Sb cation disorder is combined, a multi-scale phonon scattering network is constructed, the propagation of phonons with different frequencies is effectively inhibited, the lattice thermal conductivity is significantly reduced, meanwhile, through carrier concentration optimization and Fermi level regulation, the Seebeck coefficient is effectively improved while the reasonable electrical conductivity is maintained, the power factor of the material is obviously improved, and therefore, the thermoelectric performance of the MnTe solid solution sample is significantly improved.

The present invention relates to an audio device with a housing, a microphone arm and a detector for determining an orientation of the microphone arm relative to the housing. The invention may advantageously be applied in audio devices having a microphone arm, such as headsets, earphones, hearing protectors and other audio devices used for sound pickup. The audio device (1) comprises a housing (2), a microphone arm (3) that is mechanically and movably connected to the housing (2), a microphone unit (4) arranged at or in the microphone arm (3) and configured to pick up sound (5) from the environment of the audio device (1) and provide a corresponding microphone audio signal (M), a signal processor (5) arranged at or in the housing (2) and configured to provide electric power (P) to the microphone unit (4), and a flexible substrate (6) extending in a length direction (L) between a first end (7) mechanically connected to the housing (2) and a second opposite end (8) mechanically connected to the microphone arm (3). The flexible substrate (6) is configured to bend in dependence on the microphone arm (3) moving relative to the housing (2) and comprises one or more electrical conductors (9) electrically connecting the microphone unit (4) and the signal processor (5) to convey the electric power (P) from the signal processor (5) to the microphone unit (4) and / or the microphone audio signal (M) from the microphone unit (4) to the signal processor (5). The flexible substrate (6) further comprises a bend sensor (10) that is configured to change the value of an electric property in dependence on a bending of a first portion (11) of the flexible substrate (6), and the audio device (1) further comprises a bend detector (12) electrically connected to the bend sensor (10) and configured to estimate an orientation (O) of the microphone arm (3) relative to the housing (2) in dependence on the value of the electric property of the bend sensor (10). Arranging the bend sensor (10) at or in the flexible substrate (6) may provide a both reliable and cost-effective estimation of the orientation (O) of the microphone arm (43).

To accurately measure the dielectric properties of dielectric materials and the conductivity of conductors that make up a wiring board. [Solution] The resonator comprises a pair of conductor layers, a plate-shaped dielectric located between the pair of conductor layers, and a plurality of first via conductors and a plurality of second via conductors extending within the dielectric in a direction intersecting the conductor layers. In a plan view, each of the plurality of first via conductors is located at a predetermined interval on the outer periphery of a predetermined region. In a plan view, each of the plurality of second via conductors is located inside the predetermined region. Each of the plurality of first via conductors is mechanically connected to each of the pair of conductor layers. The dielectric is located between each of the plurality of second via conductors and each of the pair of conductor layers.

The application discloses a kind of low dielectric ultra-low loss high temperature stability neodymium oxide and zinc niobate co-doped barium titanate ceramic and preparation method.The general formula of the ceramic material is (1-x) BaTiO3-xZnNb2O6-xNd2O3, wherein x is 0.1-0.2, and is prepared by traditional solid-phase sintering method, with simple process, good repeatability and high yield.The application introduces Zn 2+ , Nb 5+ And Nd 3+ A / B site collaborative doping is carried out in BaTiO3 matrix, so that the obtained ceramic material realizes excellent comprehensive performance in the range of x=0.145-0.155 while maintaining moderate dielectric constant: extremely low dielectric loss (tanδ≤0.001), excellent temperature stability (ΔC / C 20°C ≤±0.5%, -150-250°C) and high breakdown field strength (E b ≥280kV / cm).The ceramic material is suitable for scenes with strict requirements on dielectric properties, temperature stability and breakdown field strength, and can be applied in fields such as aerospace extreme environment electronic components, new energy vehicle power modules and precision high-frequency sensing equipment, with significant application value and market potential.

The utility model discloses a continuous PCBA electric property testing arrangement belongs to PCBA electric property testing technical field, including testing machine, the end fixedly connected with of testing machine has the placement utensil, the inner wall rotationally connected with of placement utensil has two -way screw rod, one end fixedly connected with of two -way screw rod has servo motor, still include protection mechanism, the protection mechanism includes the sliding frame of sliding connection in the inner wall both sides of placement utensil, the inner wall sliding connection with of sliding frame has rubber block, the inner wall screw connection of sliding frame is in the surface of two -way screw rod, both sides fixedly connected with of sealing sleeve of sliding frame, the other end fixedly connected with of sealing sleeve is at one side of placement utensil, one side fixedly connected with of sliding frame has pressure sensor. Through above -mentioned mode, the surface of two -way screw rod is protected through sealing sleeve, avoids two -way screw rod to be exposed to the air, and then reduces the abrasion between two -way screw rod and sliding frame, thereby accurately controls the clamping intensity to PCBA.

This invention relates to the field of coating preparation technology, specifically to a current-carrying friction and wear protective coating with good electrical conductivity, its preparation method, and its application. The coating is prepared by granulation, sintering, and sieving of Ti2AlC powder. The coating raw materials are Ti2AlC powder and metallic Cu powder, with the Ti2AlC phase ratio being 10%~40%. A composite coating is prepared on the surface of boiler steel using supersonic flame spraying technology. The spraying process parameters are: kerosene flow rate 23~29 L / h, oxygen flow rate 53 m³ / h. 3 With a powder feed rate of 30 g / min, a step size of 3 mm, a spraying distance of 320 mm, and a spray gun moving speed of 800 mm / min, the application of Ti2AlC phase-reinforced Cu-based composite coating under current-carrying friction and wear conditions is realized. This provides a method to improve the current-carrying friction protection performance of Cu alloy surfaces without affecting the coating conductivity, which helps to improve the reliability, efficiency, lifespan, and safety of related equipment.

The application provides a novel chalcogenide compound and a preparation method and application thereof, and the chemical general formula is M 3Bi4 Q 9, wherein M one or two selected from metals Pd and Pt, Q one or two or more combinations of chalcogen elements S, Se and Te. The series of materials belong to the trigonal system, R -3 space group, with a three-dimensional extended crystal structure, and are a novel thermoelectric material. In the structure, M 6 Q 12 ] 12‑ The "hard clusters" are dispersed in Bi- Q The "soft lattice" forms a unique crystal structure of "soft in hard", which has good thermoelectric performance on the basis of ensuring unobstructed electric transport characteristics. Through proper carrier doping, excellent thermoelectric performance can be achieved, and the material is expected to be used in waste heat recovery, thermoelectric refrigeration, thermoelectric power generation and other thermoelectric conversion related fields.

This utility model relates to the field of electronic material testing equipment technology, and in particular to an adjustable electronic material dielectric property testing fixture, including a support assembly, comprising a support frame with a design that is narrower at the top and wider at the bottom, the top of the outer wall of the support frame being hollow; and an adjustment assembly, comprising a fixed frame fixedly connected to the top of the inner wall of the support frame, a trapezoidal block provided on the inner side of the fixed frame, and plug-in blocks integrally formed on both sides of the outer wall of the trapezoidal block; the support assembly also includes a base integrally formed at the bottom of the support frame, the outer wall of the base having mounting holes for positioning the support assembly; it can stably support the adjustment assembly and clamping structure through the integrated support assembly; at the same time, the clamping range of the clamping plate can be controlled by the adjustment assembly, so as to clamp according to different devices to be tested, meet the clamping requirements under different conditions, and improve the practicality of the device.