296results about How to "Inhibition strength" patented technology

A multi-chip package (MCP) is provided. The MCP comprises a plurality of stacked semiconductor chips, each including a chip pad and a first insulating layer overlying the chip pad with an opening to expose a portion of the chip pad. Each chip additionally includes a pad redistribution line formed on the first insulating layer and a second insulating layer covering the pad redistribution line. A via hole is formed through the chip, the first insulating layer, a pad redistribution line and the second insulating layer. The MCP further includes a protective layer formed on the bottom of the lowest semiconductor chip. The protective layer includes a conductive pad formed opposite the bottom of the lowest semiconductor chip. A conductive bar extends through the via holes of the stacked semiconductor chips, from the conductive pad, and is electrically connected to the pad redistribution line of the stacked semiconductor chips.

As a treatment for angiostenosis, angioplasty (PTA or PTCA) of expanding a small-sized balloon in a vessel has been commonly conducted. However, this treatment easily causes repeated stenosis (restenosis) after the treatment. Placement of a stent in a vessel is also effective in decreasing restenosis, but this treatment may also cause restenosis. The present invention provides a stent containing a poly (lactide-co-glycolide) or both a poly (lactide-co-glycolide) and an immunosuppressive agent in at least a portion of a surface of the stent, and further containing a material nondegradable in vivo.

In a semiconductor device in which a semiconductor chip is stacked on a substrate, an interposer chip having wirings is provided under the semiconductor chip. A bonding pad of the semiconductor chip is electrically connected to a bonding terminal provided on the substrate via the interposer chip by wire bonding. The interposer chip prevents a semiconductor element formed in the semiconductor chip from deteriorating in terms of an electric property and from being physically damaged. Further, the wire bonding strength does not drop. Moreover, it is possible to form a fine wiring pitch for relaying a wire-bonding wire.

The present invention is a friction stir welding machine adapted to perform solid phase welding on a welding portion of materials to be welded, by pressing a welding tool against the welding portion of the materials to be welded while rotating the welding tool, and forcing the welding tool to be advanced into a softened portion which is softened by a frictional heat while stirring the softened portion, wherein a coating made of aluminum nitride is formed on at least a region of the welding tool to be in contact with the materials to be welded.

PCT No. PCT/JP96/02685 Sec. 371 Date Mar. 25, 1998 Sec. 102(e) Date Mar. 25, 1998 PCT Filed Sep. 18, 1996 PCT Pub. No. WO97/12010 PCT Pub. Date Apr. 3, 1997A delayed-tack adhesive composition exhibiting a high tack strength even for adherends made of non-polar materials such as polyethylene and polypropylene, which comprises a (co)polymer prepared by the use of a radical-polymerizable monomer having a straight-chain or branched alkyl group having 9 to 18 carbon atoms and a plasticizer being solid at ordinary temperatures.

A membrane-catalyst layer assembly with reinforcing films including a solid polymer electrolyte membrane 2, a catalyst layer 3 formed on each surface of the electrolyte membrane 2, and a reinforcing film 4 located on each surface of a membrane-catalyst layer assembly having the electrolyte membrane and the catalyst layers. Each of the reinforcing films 4 has a frame shape with a central opening 41. Each of the catalyst layers 3, except for an outer edge portion 31, is exposed through the opening 41. Each reinforcing film 4 has a first bonding layer 43 bonded to a membrane-catalyst layer assembly 10, and a gas barrier layer 42 formed on the first bonding layer 43 to prevent passage of a fuel gas and an oxidant gas.

A rare earth garnet sintered compact which is produced by subjecting a rare earth garnet powder such as YAG to a pre-sintering, sintering the pre-sintered product by HIP, and annealing the sintered product at 1100° C. to 1600° C. in a whole oxygen atmosphere under a whole pressure of 4.5 MPa or more, and has an average crystallite diameter of 0.9 to 9 μm, an optical loss coefficient of 0.002 cm⁻¹ or less and a strain of a transmitted wave of 0.05 λ cm⁻¹ or less.

A first quick connector is provided with a connector housing and a wire retainer. The connector housing has a retainer mounting portion which is formed with engagement slits. The wire retainer is mounted on the retainer mounting portion such that engagement arms enter the engagement slits and project in the retainer mounting portion. Each of the engagement slits has a first slit part on one circumferential end and a second slit part on the other circumferential end with intervening a divider portion therebetween.

In a conventional UBM made of, for example, Cu, Ni, or NiP, there has been a problem that when an electronic component is held in high-temperature conditions for an extended period, the barrier characteristic of the UBM is lost and the bonding strength decreases due to formation of a brittle alloy layer at a bonding interface. The present invention improves the problem of decrease in long-term connection reliability of a solder connection portion after storage at high temperatures. An electronic component comprises the electronic component includes an electrode pad formed on a substrate or a semiconductor element and a barrier metal layer formed to cover the electrode pad and the barrier metal layer comprises a CuNi alloy layer on the side opposite the side in contact with the electrode pad, the CuNi alloy layer containing 15 to 60 at % of Cu and 40 to 85 at % of Ni.

A wafer is divided by setting the focal point of a laser beam inside the wafer at positions corresponding to division lines, thereby forming modified layers inside the wafer along the division lines. Each modified layer has a thickness ranging from the vicinity of the front side of the wafer to the vicinity of the back side of the wafer. An etching gas or an etching liquid is supplied to the wafer to erode the modified layers, thereby dividing the wafer into individual devices. The modified layers are not crushed, so fine particles are not generated in dividing the wafer. Accordingly, fine particles do not stick to the surface of each device and cause a reduction in quality. Further, since the modified layers are removed by etching, it is possible to prevent a reduction in die strength of each device due to the remainder of the modified layers.

A first opening through which an end anchor of a seat belt is inserted from above is formed in a side shield member that covers a side portion of a seat cushion. A plug member that plugs up the first opening and has a belt guide hole through which a belt portion of the seat belt is inserted is fit into the first opening. A reinforcing member having a second opening in a portion corresponding to the first opening is arranged on an inside surface of the side shield member.

The present invention provides an anti-reflection film which has excellent optical properties at a low production cost. The anti-reflection film of the present invention has a low refractive index hard coat layer having low refractive index particles and a binder matrix which is formed by curing an ionizing radiation curable material on a transparent substrate. It is a feature of the anti-reflection film of the present invention that the low refractive index hard coat layer has two optically distinguishable layers from the transparent substrate side, namely, an intermediate layer and a localized layer wherein the low refractive index particles are localized, and the refractive index and optical thickness of the localized layer are in the range of 1.29-1.43 and in the range of 100-200 nm, respectively.

The preparation method for vycor glass that emits green light comprises, using porous glass with SiO2 content over 95wt%, wherein, the aperture is 1.0-10nm and pore takes up volume of 23-28%; dipping the said glass into solution that contains rare-earth ion, such as Tb ion, or Tb ion and Ce ion, or gadolinium ion and Yt ion; sintering at temperature more than 1050Deg. The product has green light of 545nm when activating by ultraviolet light of 254nm.

A protective undergarment, such as trousers or a shirt intended for use under other clothing, employs seamless welding to permanently affix one or more protective pad segments to the main body of material. An ultrasonic welding process may be employed. Thus, a welding material, such as a suitable polymeric film, may be used to fuse a small-area fabric member to the main body material of the undergarment, so as to form a pocket for a pad segment. To ensure that the pad segment does not fold or otherwise move within the pocket, at least one channel may be formed within the pad segment to allow welding within the interior of the pad segment.

A single-piece manifold for use with a residential or other building sprinkler system is disclosed which comprises a body having an inlet in communication with a water supply and an outlet that communicates with a sprinkler system having a conduit adapted for fluid flow formed between the inlet and the outlet. The body includes a main valve that provides a means of manually shutting off communication with the water supply and a combination pressure relief and test valve for draining and testing the sprinkler system. A pair of check valves are positioned across the conduit for preventing fluid flow therethrough when the sprinkler system is inactive with a space being defined between the first and second check valves for communication with a vent passageway. The vent passageway communicates with atmosphere and prevents false alarms due to water surges in the supply line.

An electro-optical device includes an element substrate having a plurality of pixel regions; thin-film transistors, arranged in the pixel regions, including gate electrodes, portions of a gate insulating layer, and semiconductor layers; pixel electrodes electrically connected to drain regions of the thin-film transistors; and storage capacitors including lower electrodes and upper electrodes that are opposed to the lower electrodes with insulating layers disposed therebetween, the insulating layers being made of the same material as that for forming the gate insulating layer. The upper electrodes overlap with some of end portions of the lower electrodes. The gate insulating layer has thin portions located in inner portions of regions overlapping with the lower and upper electrodes and thick portions which are located in regions overlapping with the upper electrodes and the end portions of the lower electrodes and which have a thickness greater than that of the thin portions.

The invention discloses a method for cemented filling of phosphogypsum in a mine goaf. The method mainly comprises the following steps: mixing the following materials in weight ratio: 0.8 to 1.2 percent of cement, 1.2 to 0.8 percent of water quenched iron (steel) slag, 10 to 14 percent of the phosphogypsum, and 0.4 to 0.8 percent of lime; adding water to the mixture and stirring the mixture to form filling slurry with the weight concentration of between 55 and 65 percent; conveying the filling slurry to the mine goaf; and curing the filling slurry to form a high-strength filling material. The method can significantly reduce the curing time of the filling slurry taking the phosphogypsum as the main raw material, is suitable for various mining techniques and the cement filling for various types of mine goafs, and has strong economic and social benefits.

A terminal box includes: a main body (101); at least one pair of terminal strips (106) which are connectable to a positive electrode and a negative electrode of a solar cell module; and a backflow prevention diode (118) bridged between the terminal strips (106) to connect the terminal strips (106). The terminal strip (106) and the backflow prevention diode (118) are contained in the main body (101). The terminal strip (106) includes: a supporting part (S) for supporting a lead wire (118a) of the backflow prevention diode (118) in a mounted state; a pinching part (K) for supporting the lead wire (118a) in a pinched state; and a recess (119B) which is provided between the supporting part (S) and the pinching part (K) and configured to position a connecting solder upon connecting the lead wire (118a) and the terminal strip (106).

A reticulate heater has a net-mesh-like-structured heat generator 2 including a plurality of heater wires 20 each having the same wire diameter of from 0.02 to 0.12 mm. The plurality of heater wires 20 are formed into the net-mesh-like-structured heat generator 2 by a tricot knitting technique wherein loops are vertically formed by vertically knitting the heater wire on a continuous and planar basis. The knit meshes of the tricot knitting each have a pitch of 0.5 to 5 mm. Also, the heater wires may be the ones prepared by covering the heater bare wires with a for-enamel-wire coating. Further, the net-mesh-like-structured heat generator 2 may be the one including a plurality of first heater wires each consisting of a heater bare wire only and a plurality of second heater wires each prepared by covering the heater bare wire with a for-enamel-wire coating, the first and second heater wires being formed into the net-mesh-like-structured heat generator by a tricot knitting technique. As a result of this, the reticulate heater can be close adhered also to a complex curved surface. In addition, the reticulate heater can be also brought to a state of its being electrically very stable. Also, it can be arranged that a prescribed amount of heat generated be obtained.

A method and an apparatus includes using a planar plotting mask which can continuously change a mask image; continuously moving the planar plotting mask with reference to the surface of the photocurable resin composition and exposing the surface of a photocurable resin composition to light by way of the planar plotting mask while continuously changing a mask image of the planar plotting mask in accordance with a cross-sectional profile pattern of an optically-cured resin layer to be formed and in synchronism with movement of the planar plotting mask, to thus form an optically-cured resin layer having a predetermined cross-sectional profile pattern; and performing building operation such that boundary areas among adjacent plotted areas in the optically-cured resin layer become unnoticeable in a finally-obtained stereolithographic three-dimensional object.

The invention discloses a Czochralski crystal growth furnace, belongs to Czochralski crystal growth devices, and solves the problems of instability caused by the asymmetric flowing of cooling gas in the existing Czochralski crystal growth furnace and aggregation of inclusion impurities in melt in crystals. The Czochralski crystal growth furnace comprises a furnace body, a base, an inner thermal insulating layer, an electromagnetic induction heater, a furnace cover, a crucible, a crucible cover and a seed rod, wherein a crucible rectifying tube is fixed in the crucible; rectangular holes are uniformly formed in the lower end of the crucible rectifying tube along a circumference; the lower part of the seed rod is connected with a heat insulating ring through ribs which are uniformly and radially distributed in the radial direction; the heat insulating ring is annular; the outer diameter of the heat insulating ring is matched with the inner diameter of the inner thermal insulating layer. The Czochralski crystal growth furnace is simple and reliable in design, can effectively adjust the flow field of the cooling gas and the melt, further improve the temperature field, and improve the stability in the growth process, is beneficial to improving of the growth efficiency of high-quality crystals, reduces the cost, and is applied to the crystal preparation in various different temperature gradient growth conditions.