901 results about "Wire bonding" patented technology

The invention discloses a bonding silver wire quality detection method and system, and relates to the technical field of bonding quality detection.The bonding silver wire quality detection method comprises the steps that a thermal infrared imager is adopted to scan a bonding area, and temperature field distribution data in the bonding process is obtained; scanning the bonding area by adopting a magnetic conductivity measuring probe to obtain magnetic conductivity distribution data of the bonding area; performing 10 * 10 grid division on the bonding area, and performing feature extraction on the temperature field distribution data and the magnetic conductivity distribution data based on divided grids to obtain thermal feature parameters and magnetic feature parameters; and calculating a bonding silver wire quality score according to the thermal characteristic parameters and the magnetic characteristic parameters, and judging the bonding quality of the silver wire according to a score result to obtain a bonding quality evaluation result. According to the method, the limitation of traditional single parameter detection is broken through, the accuracy and reliability of bonding quality evaluation are remarkably improved, and a systematic technical support is provided for improvement of the bonding process level.

Silicon photonics technologies adds integrated optics functionality to CMOS integrated circuits thereby leveraging high volume manufacturing. Independent of geometry or technology these silicon photonic devices require packaging with single mode optical fibers to interface to the optical network and / or co-packaging with active semiconductor devices, discrete microoptoelectromechanical systems (MOEMS) s or monolithically integrated MOEMS. Stringent performance constraints and minimizing manufacturing costs / times are consistent demands on such photonic circuits. Accordingly, there is a demand for low-cost and low-loss optical coupling technologies for packaging that can easily be scaled for mass production that overcome limitations in the prior art. The inventors have established design methodologies, packaging schemes and component designs that leverage automated passive assembly techniques for speed / cost in combination with directly written optical interconnects that allow for offsetting the losses that would arise from the manufacturing tolerances of these passive assembly techniques.

The invention discloses a TR assembly gold wire bonding process parameter prediction method based on a multilayer perceptron neural network, and belongs to the technical field of microwave device intelligent manufacturing. According to the method, an intelligent mapping model of gold wire bonding geometric parameters and radio frequency performance is constructed by fusing a multi-layer perceptron neural network and parameterized electromagnetic simulation. The method specifically comprises the following steps: generating 45 groups of samples in a process parameter space by adopting Latin hypercube sampling; obtaining an S parameter data set through batch processing electromagnetic simulation; box-Cox conversion and normalization preprocessing are carried out on the data; the method comprises the following steps: constructing an MLP neural network model of a 3-32-16-2 structure, and determining hyper-parameters by using Bayesian optimization; and after training is completed, rapid reverse mapping from target performance to process parameters is realized. According to the method, the number of traditional tests is reduced from more than 200 to 45, the predicted root-mean-square error of S21 is smaller than or equal to 0.12 dB, the determination coefficient is larger than or equal to 0.96, and the parameter backstepping time lt is obtained; according to the method, full-process automation from simulation, training, optimization to production and issuing is realized, and the development efficiency of the TR component is remarkably improved.

The invention relates to the technical field of advanced process control, in particular to an intelligent gold bonding wire real-time monitoring and optimizing method and system driven by the Internet of Things, and the method comprises the following steps: collecting the pressure and temperature data of a gold bonding wire, and obtaining the real-time data of the pressure and temperature of the gold wire; and based on the real-time data of the gold wire pressure and temperature, data verification is carried out, abnormal values are eliminated, and a preliminary data verification result is generated. The pressure and temperature data of the gold bonding wire are collected in real time, abnormal values are recognized and eliminated in time, the reliability of the data is guaranteed, and the accuracy of data analysis is improved; on the basis that reliable data are obtained, real-time data are compared with standard parameters, the deviation degree is rapidly positioned, and precise monitoring of the gold wire bonding process is achieved; furthermore, according to the deviation analysis result, the pressure and temperature parameters of the bonding equipment are adjusted in time, so that the actual production condition better meets the technological standard requirement.

In an aspect, an integrated circuit (IC) package includes a base structure, an IC component disposed on the base structure, a plurality of interposer connection structures disposed on the base structure, and an interposer structure disposed over the IC component and the plurality of interposer connection structures. The plurality of interposer connection structures is configured to connect the base structure and the interposer structure. Each interposer connection structure of the plurality of interposer connection structures includes a bond ball portion that is connected to the base structure, and a bond wire portion that is coupled to the bond ball portion and extends toward the interposer structure. A width of the bond ball portion is greater than a width of the bond wire portion.

A miniaturized interferometric integrated photonic gyroscope structure with top silicon oxide, middle silicon oxide and bottom silicon oxide deposited on a silicon substrate comprises broadband optical source or a semiconductor optical amplifier with silicon nitride ring resonator wavelength filter, connected with a thin film lithium niobate or piezoelectrically actuated silicon nitride phase modulator vertically coupled with a silicon nitride waveguide spiral loop. The silicon nitride waveguide spiral loop is patterned on thin bottom oxide layer with air trenches below it and connected with a germanium detector either through photonic wire bonding or vertically integrated through reflecting mirror embedded into silicon wafer. Various methods of coupling alternative materials are described and the potential of connecting several spiral waveguides for enhanced sensitivity in a gyroscope application.

The invention discloses a thin film light-transmitting bead black light sensor ToF packaging structure which comprises a substrate, a vertical cavity surface emitting laser, an ASIC chip, black plastic packaging glue and light-transmitting beads. The vertical cavity surface emitting laser and the ASIC chip are arranged on the substrate and are electrically connected with the substrate through routing, and light-transmitting beads are arranged on a first emitting end of the vertical cavity surface emitting laser and a first receiving end of the ASIC chip; the black plastic packaging adhesive is packaged on the vertical cavity surface emitting laser, the ASIC chip and the light-transmitting beads, the tops of the two light-transmitting beads protrude out of the top surface of the black plastic packaging adhesive, and the black plastic packaging adhesive forms an isolation retaining wall between the vertical cavity surface emitting laser and the ASIC chip, so that light emitted by the vertical cavity surface emitting laser penetrates through the light-transmitting beads and then is emitted out. The ASIC chip receives the reflected light passing through the light-transmitting bead. The invention relates to the technical field of semiconductor packaging, and can solve the technical problems of a traditional transparent optical sensor packaging structure.

An optical semiconductor chip of the present disclosure includes a high frequency line between an electrode pad receiving a modulation signal and a modulation electrode on the optical waveguide having a light absorption layer. The depletion layer capacitance generated in the light absorption layer is canceled by an inductor component of the high frequency line. When a portion directly below the high frequency line is embedded with a low-dielectric-constant material or is made hollow, the parasitic capacitance is further reduced. The high frequency line may have a zigzag shape as well as a linear shape. The electrode pad on the optical semiconductor chip can be connected to other substrates including RF lines for modulation signal input by bumps or wire bonding.

The invention relates to the technical field of buzzer manufacturing, in particular to a buzzer continuous full-automatic wire welding mechanism which comprises a base, a hollow shaft motor is arranged in the center of the base, and a rotating disc station mechanism is fixedly installed on a hollow shaft of the hollow shaft motor. A supporting disc is fixedly installed at the position, located at the axis of a hollow shaft of the hollow shaft motor, of the base through a supporting base, a feeding mechanism and a discharging mechanism which are perpendicular to each other are arranged at the top end of the base around the outer ring of the rotary disc station mechanism, and an empty disc mechanical arm is arranged between the feeding mechanism and the discharging mechanism. A guide mechanism, a wire stroking mechanism, two sets of wire welding mechanisms and a steering mechanism are sequentially arranged between the feeding mechanism and the discharging mechanism in the rotating direction of the rotating disc station mechanism, and the problem that in the buzzer manufacturing process, a traditional wire welding technology mainly depends on manual operation, and the production efficiency is high is solved. The production efficiency is low, and the welding quality is unstable.

An original substrate structure is rearranged, a bonding pad comprises a bonding wire part and a die bonding part matched with the bonding wire part, the die bonding part comprises a common electrode part arranged in the center of a substrate and four die bonding sub-parts arranged in the circumferential direction of the common electrode part, and the die bonding sub-parts are used for bearing RGB chips. Wherein the arrangement mode of the RGB chips is changed into circumferential arrangement from linear arrangement, lamp bead abnormity caused by poor die bonding in the manufacturing process is reduced, meanwhile, each die bonding sub-part is electrically connected with the corresponding wire bonding part through a bonding wire, and the wire bonding parts and the common electrode parts are electrically connected with the corresponding pins, so that five pins exist on the back of the substrate, and the reliability of the substrate is improved. And finally, a bowl cup is fixedly arranged on the substrate and used for delineating any die bonding sub-part and the corresponding wire bonding part, the delineating die bonding sub-part is used for die bonding of the blue light chip, and the bowl cup is filled with white light packaging glue and used for displaying white light and improving the overall brightness of the lamp bead.

The application discloses a kind of partitioned packaging structure of laser light source for dTOF ranging system, the light-emitting hole of the laser light source is divided into multiple groups, each group corresponds to a light-emitting area respectively;Each area has several rows of light-emitting holes, and the rows of light-emitting holes in all areas are periodically interleaved arranged;Each row of light-emitting holes is communicated with the wire bonding area of the side edge of laser light source, and the wire bonding area is electrically connected with the pad of the corresponding peripheral power supply circuit by gold wire;The wire bonding areas connected by the multiple rows of light-emitting holes belonging to the same area are connected to the same pad.The partitioned packaging of the laser light source of the application is simple and compact, makes full use of the limited total area of light source light-emitting, and is easy to package, manufacture and produce.

A package is disclosed. The package includes a carrier that comprises a first conductive layer on a first side and a second conductive layer on a second side opposite the first side. The first conductive layer comprises wire bonding pads. The package also includes a semiconductor die that is flip chip mounted on the first side of the carrier.

The utility model relates to the technical field of magnetic ring winding and stranding, and discloses a multi-station rotary table stranding mechanism which comprises a base, a rotary table is arranged above the base, a rotary motor is arranged on the base, the rotary table is connected to the output end of the rotary motor through a rotary main shaft, and the rotary table is connected to the output end of the rotary motor. A clamping and positioning jig is arranged on each station arm on the rotating table, the base is provided with a wire bonding rod assembly, a twisted wire assembly and a photographing and detecting assembly corresponding to the clamping and positioning jigs, and each clamping and positioning jig comprises a magnetic ring fixing seat and a wire clamping block arranged on the side of the magnetic ring fixing seat. The magnetic ring fixing base clamps and positions a magnetic ring, the wire bonding rod assembly and the wire clamping block are matched to place a needed coil on the clamping and positioning jig for wire clamping, and then the remaining coil is twisted through the twisted wire twisting assembly.

The utility model discloses a MINI RGB (Red, Green, Blue) LED (Light Emitting Diode) lamp bead, which relates to the technical field of LEDs and comprises a substrate, a first chip, a second chip and a third chip, the front surface of the substrate is provided with a front surface circuit, the back surface of the substrate is provided with a back surface circuit, and the front surface circuit and the back surface circuit are connected through a through hole; the front circuit comprises a die bonding area, a wire bonding area and an insulating area, and the die bonding area and the wire bonding area are electrically connected through a bonding wire; the die bonding area comprises a first die bonding area, a second die bonding area and a third die bonding area which are separated from one another, the first chip is arranged in the first die bonding area, the second chip is arranged in the second die bonding area, and the third chip is arranged in the third die bonding area. According to the utility model, burning of the lamp beads and caterpillars on the display screen caused by water vapor permeation of the lamp beads can be reduced, so that the process yield and the display effect are improved.

A semiconductor device includes a semiconductor chip having a chip pad; a redistribution line disposed on the semiconductor chip; and a first dielectric layer disposed on the semiconductor chip and the redistribution line. The redistribution line is connected to the chip pad and has a wire bonding pad section. The first dielectric layer has a first opening that exposes the wire bonding pad section. The redistribution line includes a copper layer, a nickel layer on the copper layer, and a gold layer on the nickel layer. The nickel layer comprises a side surface protruding beyond a side surface of the copper layer.

The invention relates to the technical field of semiconductors, and provides a semiconductor structure and a semiconductor device, and the semiconductor structure comprises a conductive pedestal, an electronic device, and a functional connector. Wherein one side of the conductive base is provided with an external connection piece. The electronic device and the functional connecting piece are connected to the surface of the conductive base, and the electronic device is electrically conducted with the conductive base. Wherein the functional connecting piece comprises a conductive interconnection layer and a plurality of passive devices, the conductive interconnection layer is connected to the conductive base in an insulating manner, the plurality of passive devices are connected to one side, deviating from the conductive base, of the conductive interconnection layer, the plurality of passive devices form a functional circuit through the conductive interconnection layer, a first external connection end of the functional circuit is communicated with the external connecting piece, and a second external connection end of the functional circuit is communicated with the external connecting piece. And the second external end of the functional circuit is communicated with the electronic device. Through the arrangement, the problems that in the prior art, a passive device is not provided with a wire bonding electrode, so that electrical connection cannot be achieved, and at least one of the problems that the size tolerance of the passive device is large and the wire bonding workability is poor can be solved.

The invention relates to the technical field of semiconductor packaging, and discloses a bonding wire welding method based on bare chip interconnection, and the method comprises the steps: collecting and fusing acoustic response and optical reflection signals of a bonding interface in real time through a multi-mode in-situ sensing mechanism integrating acoustic resonance and surface plasmon resonance; dynamically calculating the thickness, the mechanical coupling deformation and the energy dissipation state of the intermetallic compound layer; and the ultrasonic power and the bonding force are subjected to closed-loop adjustment in combination with a model prediction control algorithm, so that the welding process is evolved along a preset optimal physical path all the time. The system comprises a multi-mode sensing welding head, a synchronous data acquisition module, a state resolving module and a self-adaptive control module. The transparent and intelligent welding process is realized, and the bonding consistency, reliability and yield of high-density interconnection are remarkably improved.

A wire bonding system is provided. The wire bonding system includes (i) a bond head assembly configured to carry a wire bonding tool; and (il) a wire bonding tool replacement system for replacement of the wire bonding tool with another wire bonding tool.

The invention provides a deep ultraviolet LED device packaging technology, and relates to the technical field of semiconductor photoelectric device packaging. The deep ultraviolet LED device packaging process comprises the following steps: carrying out cleaning and surface treatment on a deep ultraviolet LED chip; selecting a packaging substrate, and carrying out surface metallization treatment on the packaging substrate; fixing the pretreated deep ultraviolet LED chip at a preset position on the packaging substrate by using silver colloid, and connecting an electrode of the deep ultraviolet LED chip with the corresponding packaging substrate by adopting a gold wire bonding process; the periphery of the deep ultraviolet LED chip is filled with an organic silicon material, and a quartz glass cover plate covers the organic silicon material; and installing a metal radiating fin on the back surface of the packaging substrate. By selecting the quartz glass cover plate with high light transmittance and the fluorine-containing organic silicon resin filling material with low refractive index, the total reflection of light in the packaging part is reduced, the light emitting efficiency is improved, and compared with the traditional packaging process, the light emitting efficiency can be improved by 20-30%.

The invention belongs to the technical field of aluminum wire bonding, and particularly relates to an aluminum wire bonding and pressing device which comprises a bonding machine body, the bonding machine body comprises a feeding mechanism and a paying-off welding mechanism, the feeding mechanism and the paying-off welding mechanism are communicated through a conveying mechanism, and the conveying mechanism comprises a mounting table communicated with the feeding mechanism. An up-and-down abutting piece is installed at the position, matched with the paying-off welding mechanism, in the mounting table, a first conveying assembly and a second conveying assembly are symmetrically installed on the mounting table through the up-and-down abutting piece, the first conveying assembly comprises a pushing piece and a conveying piece, and L-shaped protection tables are fixedly installed at the upper end of the mounting table in a front-and-back symmetry mode; according to the invention, in the process of abutting and limiting the chips through the up-and-down movement of the up-and-down abutting piece, the transportation piece transports the subsequent chips to make the subsequent chips abut against the previous chips, and then when the up-and-down abutting piece moves upwards to be lifted, the pushing piece accurately pushes the chips which abut against each other towards the direction welding mechanism to make the chips be aligned with the up-and-down abutting piece.

The present disclosure provides a wire bonding apparatus, a wire bonding method and a semiconductor device. The wire bonding apparatus includes: a wire tube for containing the wire and including a wire exit; a wire heating assembly located at a side of the wire exit; and a pre-shaping assembly located at a side of the wire tube and including a wire pre-pressing face; the pre-shaping assembly having a first state in which the wire pre-pressing face of the pre-shaping assembly is configured to abut the wire tube and a second state in which the pre-shaping assembly is configured to disengage from the wire tube. The wire bonding apparatus, the wire bonding method and the semiconductor device as provided in the present disclosure can reduce or eliminate the cratering effect.

The invention relates to the technical field of continuous casting furnaces, in particular to a gold wire bonding continuous casting furnace which comprises a heating furnace, a cooling chamber and a winding chamber, a heating groove used for heating metal materials is formed in the heating furnace, a casting opening is formed in the bottom of the heating groove, a cooling pipe is arranged in the cooling chamber and divided into an outer pipe and an inner pipe, and the top end of the inner pipe communicates with the casting opening; a heat dissipation cavity is formed between the inner pipe and the outer pipe, an air cooling cavity is formed in the winding chamber, the air cooling cavity is installed at the bottom of the heat dissipation cavity and communicates with the inner pipe, a gas booster pump is fixedly installed on the outer wall of the air cooling cavity, a first heat dissipation pipe is arranged in the heat dissipation cavity, and the first heat dissipation pipe communicates with the gas booster pump and the air cooling cavity. According to the gold bonding wire cooling device, the air cooling cavity is formed, inert gas is used for being matched with the cooling pipe, the gold bonding wire is cooled through the cooling pipe and then air-cooled again, the cooling efficiency of the gold bonding wire is improved, and the cooling efficiency of the gold bonding wire is guaranteed under the condition that it is guaranteed that the gold bonding wire is clean and tidy.

An electronic module for generating light pulses includes an electronic card or interposer, a LASER-diode lighting module, and a LASER-diode driver module. The interposer has an edge recess in which the lighting module is completely inserted. The driver module is arranged on top of the interposer and the lighting module. The electrical connections for driving the LASER diodes are obtained without resorting to wire bonding in order to reduce the parasitic inductances.

A wire welding machine with an automatic wire winding function relates to the technical field of semiconductor sealing testing and is used for welding a workpiece, the workpiece comprises a support bonding pad and a device bonding pad, the wire welding machine comprises a wire welding machine body, a wire welding mechanism and a control panel, the left side and the right side of the wire welding machine body are respectively provided with a feeding mechanism and a discharging mechanism, and the control panel is connected with the feeding mechanism and the discharging mechanism. A conveying channel is communicated between the feeding mechanism and the discharging mechanism, a welding plate used for bearing workpieces is arranged on the conveying channel, and the wire welding mechanism comprises a machine body, a ceramic nozzle, a welding wire, a driving piece used for driving the ceramic nozzle to conduct winding motion relative to a device welding disc and an ignition box used for melting the welding wire at the tail end of the ceramic nozzle into a metal ball. By adopting the technical scheme, the welding between the three-dimensional vertical device bonding pad such as a cylinder and the bracket bonding pad can be realized, the welding quality between the device bonding pad and the bracket bonding pad is improved, and the performance and the reliability of the semiconductor device are ensured.

An optical transmission module is provided, including: a substrate, a transmitting side and a receiving side. The substrate defines a thickness direction and includes a optical transmission channel and two refractive portions located at two opposite sides of the optical transmission channel, and each of the two refractive portions is provided with a progressive refractive index progressively increased or decreased in the thickness direction. The transmitting side includes an optical transmitter and a driver, and the optical transmitter is electrically connected with the driver by wire bonding. The receiving side includes an optical receiver and a transimpedance amplifier, and the optical receiver is electrically connected with the transimpedance amplifier by wire bonding. At least one of the optical transmitter and the optical receiver includes a light transmission face and a conductive surface, and each said light transmission face faces toward one of the two refractive portions.

The invention belongs to the field of semiconductor devices, provides a gallium nitride high-electron-mobility transistor integrated with a Schottky diode and a preparation method of the gallium nitride high-electron-mobility transistor, and aims to solve the problem that a conventional gallium nitride high-electron-mobility transistor (GaN HEMT) lacks a body diode. According to the invention, monolithic integration of the SBD and the GaN HEMT is realized through structural design, a low-impedance path is provided for reverse current, and the integration mode not only retains the original high performance characteristic of a GaN device, but also additionally endows the GaN device with reverse conduction and reverse recovery capabilities; moreover, through the structural design, the SBD can be synchronously completed on the basis of the existing GaN HEMT process, a special process or new equipment is not needed, and the cost is effectively controlled while the performance improvement is ensured; compared with an external interconnection diode scheme, parasitic inductance caused by lead bonding is eliminated, the voltage overshoot and ringing phenomena in the switching process are remarkably reduced, high-frequency switching application is facilitated, and switching loss can be greatly reduced.

A chip preparation method, comprising the steps of: bonding a cover plate layer (100) to a device layer (200); etching the device layer (200) to form an elastic structure (211) on the device layer (200); etching the cover plate layer (100) to remove part of a first insulating layer (120), such that a cover plate wafer (110) of the cover plate layer (100) is partially exposed; and bonding the side of the device layer (200) facing away from the cover plate layer (100) to a substrate layer (300), wherein the device layer (200) can be grounded by means of the substrate layer (300), and the elastic structure (211) can abut against the exposed cover plate wafer (110) under the action of the substrate layer (300). There is no need to perform additional wire bonding on the cover plate wafer (110), thereby avoiding increase of the packaging thickness and generating no additional stress problem, ensuring the performance of the chip. Further provided is a chip.

An optical module (200). The optical module (200) comprises a circuit board (300) and a light emission component (400). The light emission component (400) comprises a substrate (910), a laser chip (920), and an adapter board (980). The power supply connection and signal connection between the substrate (910) and the laser chip (920) are achieved by means of the adapter board (980), thereby avoiding the use of wire bonding to achieve the connection between the substrate (910) and the laser chip (920). The laser chip (920) comprises a first optical waveguide (9212), a second optical waveguide (9214), and a third optical waveguide (9213). The passive third optical waveguide (9213) is butt-joined to the second optical waveguide (9214) at an output end of the first optical waveguide (9212); and the transition connection between the first optical waveguide (9212) and the second optical waveguide (9214) is achieved by means of the third optical waveguide (9213), so as to reduce the end face reflection between the first optical waveguide (9212) and the second optical waveguide (9214). By controlling the thickness and width of a waveguide core layer (9226) in the second optical waveguide (9214), the effective refractive index difference between the waveguide core layer (9226) and a cladding layer of the second optical waveguide (9214) is made smaller than the effective refractive index difference between a waveguide core layer (9221) and a cladding layer of the first optical waveguide (9212), so as to optimize the spot shape and far-field divergence angle of the laser chip (920).

An example apparatus includes: a wire bond tool including a bond wire capillary having a central opening configured for receiving a bond wire in the central opening; a first laser path formed in the capillary configured to focus a first laser beam on the end of the bond wire to form a free air ball; and a second laser path formed in the capillary configured to focus a second laser beam on a bonding location beneath the capillary.

The invention discloses an intelligent bonding silver wire equipment control method and system based on the Internet of Things, and relates to the technical field of equipment control. An intelligent bonding silver wire equipment control system based on the Internet of Things comprises an equipment data acquisition module, an equipment abnormity judgment module and an equipment linkage control module. According to the method, the bonding external environment data, the bonding production process data and the bonding equipment state data are collected in real time, and the silver wire surface data are combined, so that the precise control on the bonding silver wire equipment can be realized, the production parameters can be optimized, and the bonding quality can be improved; in combination with dynamic equipment control analysis and dynamic silver wire state analysis, an environment control factor, a production process control factor, an equipment state control factor and a silver wire bonding process influence factor can be adjusted in real time, so that equipment can adapt to different production conditions, and the production flexibility is improved.