513 results about "Wire bonding" patented technology

The invention discloses a TR assembly gold wire bonding process parameter prediction method based on a multilayer perceptron neural network, and belongs to the technical field of microwave device intelligent manufacturing. According to the method, an intelligent mapping model of gold wire bonding geometric parameters and radio frequency performance is constructed by fusing a multi-layer perceptron neural network and parameterized electromagnetic simulation. The method specifically comprises the following steps: generating 45 groups of samples in a process parameter space by adopting Latin hypercube sampling; obtaining an S parameter data set through batch processing electromagnetic simulation; box-Cox conversion and normalization preprocessing are carried out on the data; the method comprises the following steps: constructing an MLP neural network model of a 3-32-16-2 structure, and determining hyper-parameters by using Bayesian optimization; and after training is completed, rapid reverse mapping from target performance to process parameters is realized. According to the method, the number of traditional tests is reduced from more than 200 to 45, the predicted root-mean-square error of S21 is smaller than or equal to 0.12 dB, the determination coefficient is larger than or equal to 0.96, and the parameter backstepping time lt is obtained; according to the method, full-process automation from simulation, training, optimization to production and issuing is realized, and the development efficiency of the TR component is remarkably improved.

The invention relates to the technical field of semiconductors, and provides a semiconductor structure and a semiconductor device, and the semiconductor structure comprises a conductive pedestal, an electronic device, and a functional connector. Wherein one side of the conductive base is provided with an external connection piece. The electronic device and the functional connecting piece are connected to the surface of the conductive base, and the electronic device is electrically conducted with the conductive base. Wherein the functional connecting piece comprises a conductive interconnection layer and a plurality of passive devices, the conductive interconnection layer is connected to the conductive base in an insulating manner, the plurality of passive devices are connected to one side, deviating from the conductive base, of the conductive interconnection layer, the plurality of passive devices form a functional circuit through the conductive interconnection layer, a first external connection end of the functional circuit is communicated with the external connecting piece, and a second external connection end of the functional circuit is communicated with the external connecting piece. And the second external end of the functional circuit is communicated with the electronic device. Through the arrangement, the problems that in the prior art, a passive device is not provided with a wire bonding electrode, so that electrical connection cannot be achieved, and at least one of the problems that the size tolerance of the passive device is large and the wire bonding workability is poor can be solved.

The invention relates to the technical field of semiconductor packaging, and discloses a bonding wire welding method based on bare chip interconnection, and the method comprises the steps: collecting and fusing acoustic response and optical reflection signals of a bonding interface in real time through a multi-mode in-situ sensing mechanism integrating acoustic resonance and surface plasmon resonance; dynamically calculating the thickness, the mechanical coupling deformation and the energy dissipation state of the intermetallic compound layer; and the ultrasonic power and the bonding force are subjected to closed-loop adjustment in combination with a model prediction control algorithm, so that the welding process is evolved along a preset optimal physical path all the time. The system comprises a multi-mode sensing welding head, a synchronous data acquisition module, a state resolving module and a self-adaptive control module. The transparent and intelligent welding process is realized, and the bonding consistency, reliability and yield of high-density interconnection are remarkably improved.

The present disclosure provides a wire bonding apparatus, a wire bonding method and a semiconductor device. The wire bonding apparatus includes: a wire tube for containing the wire and including a wire exit; a wire heating assembly located at a side of the wire exit; and a pre-shaping assembly located at a side of the wire tube and including a wire pre-pressing face; the pre-shaping assembly having a first state in which the wire pre-pressing face of the pre-shaping assembly is configured to abut the wire tube and a second state in which the pre-shaping assembly is configured to disengage from the wire tube. The wire bonding apparatus, the wire bonding method and the semiconductor device as provided in the present disclosure can reduce or eliminate the cratering effect.

The invention relates to the technical field of continuous casting furnaces, in particular to a gold wire bonding continuous casting furnace which comprises a heating furnace, a cooling chamber and a winding chamber, a heating groove used for heating metal materials is formed in the heating furnace, a casting opening is formed in the bottom of the heating groove, a cooling pipe is arranged in the cooling chamber and divided into an outer pipe and an inner pipe, and the top end of the inner pipe communicates with the casting opening; a heat dissipation cavity is formed between the inner pipe and the outer pipe, an air cooling cavity is formed in the winding chamber, the air cooling cavity is installed at the bottom of the heat dissipation cavity and communicates with the inner pipe, a gas booster pump is fixedly installed on the outer wall of the air cooling cavity, a first heat dissipation pipe is arranged in the heat dissipation cavity, and the first heat dissipation pipe communicates with the gas booster pump and the air cooling cavity. According to the gold bonding wire cooling device, the air cooling cavity is formed, inert gas is used for being matched with the cooling pipe, the gold bonding wire is cooled through the cooling pipe and then air-cooled again, the cooling efficiency of the gold bonding wire is improved, and the cooling efficiency of the gold bonding wire is guaranteed under the condition that it is guaranteed that the gold bonding wire is clean and tidy.

The invention belongs to the field of semiconductor devices, provides a gallium nitride high-electron-mobility transistor integrated with a Schottky diode and a preparation method of the gallium nitride high-electron-mobility transistor, and aims to solve the problem that a conventional gallium nitride high-electron-mobility transistor (GaN HEMT) lacks a body diode. According to the invention, monolithic integration of the SBD and the GaN HEMT is realized through structural design, a low-impedance path is provided for reverse current, and the integration mode not only retains the original high performance characteristic of a GaN device, but also additionally endows the GaN device with reverse conduction and reverse recovery capabilities; moreover, through the structural design, the SBD can be synchronously completed on the basis of the existing GaN HEMT process, a special process or new equipment is not needed, and the cost is effectively controlled while the performance improvement is ensured; compared with an external interconnection diode scheme, parasitic inductance caused by lead bonding is eliminated, the voltage overshoot and ringing phenomena in the switching process are remarkably reduced, high-frequency switching application is facilitated, and switching loss can be greatly reduced.

The utility model discloses a tunable laser light source for spectrum sensing, which comprises a tunable DFB laser array chip, a star coupler chip, an SOA array chip and an optical fiber array which are connected through waveguides, tunable lasers in each row are connected through waveguides, the lasers with adjacent wavelengths are distributed on different waveguides, and the optical fiber array is connected with the star coupler chip. The light output end of each waveguide is provided with an SOA. According to the utility model, the star-shaped coupler is adopted to uniformly distribute energy of light with different wavelengths of the tunable laser array to each light output waveguide, and the energy respectively enters different fiber grating sensors or fiber MEMS sensors and the like to realize temperature or strain sensing at the same time and realize multiplexing tree-shaped sensing and demodulation at the same time; the energy loss in the transmission process is reduced; the chips of different material systems are coupled by adopting a photon lead bonding or butt joint growth technology, the photon lead bonding technology does not need high-precision alignment, the processing efficiency is high, low-cost hybrid integration among the chips is realized, and the device is integrally compact.

The invention relates to the technical field of wire welding machines, in particular to a bonding head assembly movement mechanism of a wire welding machine. The loudspeaker comprises a binding head assembly, a voice coil motor and elastic pieces, the tail end of the binding head assembly is connected to the power end of the voice coil motor, the power end of the voice coil motor can drive the binding head assembly to swing back and forth, and the elastic pieces are obliquely arranged on the left side and the right side of the power end of the voice coil motor respectively. The upper ends of the two elastic sheets are fixed positions, the fixed positions of the two elastic sheets are both fixed on the welding wire machine body, the lower ends of the two elastic sheets are flexible positions, and the flexible positions of the two elastic sheets are respectively connected to the left side and the right side of the power end of the voice coil motor. The voice coil motor is matched with the elastic piece to drive the bonding head assembly to achieve the same swing effect as a solid rotating shaft, interference between the solid rotating shaft and the working face of the wafer is avoided, wafer machining is not limited by the length of the bonding head assembly, the working range of the bonding head is enlarged to a large extent, and the working efficiency is improved. And the processing size of the wafer can be improved from 6 inches to 12 inches.

The invention provides an ultra wide band millimeter wave transition structure based on gold wire bonding, and relates to the technical field of millimeter wave chip packaging, and the transition structure comprises a substrate, a rectangular cavity, a chip, a parallel gold wire connection structure, a stepped grounding coplanar waveguide GCPW matching structure, and a plurality of blind holes. The substrate comprises a top dielectric layer, a middle metal layer and a bottom metal layer, the rectangular cavity is arranged on the top dielectric layer; the chip is fixed in the rectangular cavity; the parallel gold wire connecting structure is used for connecting the chip and the stepped grounding coplanar waveguide GCPW matching structure; and the plurality of blind holes vertically penetrate through the substrate, are positioned in an area right below the edge of the rectangular cavity and gold wire bonding, are connected with the middle metal layer and the bottom metal layer, and are used for suppressing self-excited oscillation. According to the method provided by the invention, the transition from the chip to the substrate with the average loss lower than 0.28 dB is realized within the frequency band of 30-100GHz.

The invention discloses a superfine pitch bonding wire chopper structure with a side wire incoming function and a using method thereof, and relates to the technical field of semiconductor packaging, the superfine pitch bonding wire chopper structure comprises a workbench, a lifting platform, a lifting counting mechanism, a switching mechanism, a pay-off pipe, a chopper mechanism and a smoke suction mechanism, and the lifting platform is slidably arranged between the workbench and a mounting frame; the lifting counting mechanism is arranged on the mounting frame, the switching mechanism is arranged on the lifting table, the chopper mechanism is arranged on the lifting table, and the smoke suction mechanism is arranged on the lifting table. By means of the arrangement mode that the lifting counting mechanism, the switching mechanism, the pay-off pipe, the chopper mechanism and the smoke suction mechanism are matched, after the designated number of times is reached, the chopper is switched through the switching mechanism, bonding quality reduction caused by abrasion is avoided, the switched chopper is cleaned, and the bonding quality is improved. And meanwhile, the smoke suction mechanism can suck cleaned impurities and possibly generated smoke, smoke and chippings are effectively collected, manual intervention is reduced in the whole process, and the production efficiency is improved.

The invention relates to the technical field of microelectronics and MEMS manufacturing, in particular to a bulk acoustic resonator with a double-layer piezoelectric film and a preparation method thereof, according to the method, a heterogeneous integrated key structure is formed by a first piezoelectric layer and a second piezoelectric layer which are deposited on the two sides of a middle electrode layer respectively, the physical and process limits of a single-layer piezoelectric film FBAR are broken through, the high-frequency band is improved, and the high-frequency band is improved. A wider bandwidth is realized; middle electrode layer tuning is combined with back silicon through hole leading-out, front routing inductance is eliminated, and the low-loss characteristic of the filter under high frequency is guaranteed; the self-heating problem under large bandwidth and high power is effectively inhibited through heat dissipation integrated packaging, and the power bearing capacity is improved; the method is compatible with a CMOS (complementary metal oxide semiconductor) process and can be directly embedded into an existing production line, so that the volume is further reduced while the bulk acoustic wave resonator with the double-layer piezoelectric film can effectively cover a frequency band of more than 3GHz, and the problem that a single-layer piezoelectric film and a matched process thereof cannot meet the requirements of a next-generation radio frequency front end on high frequency, large bandwidth, high power and wafer-level packaging is solved.

The invention discloses a microwave assembly gold wire quality visual detection method based on multi-depth-of-field image fusion. The method comprises the following steps: S1, carrying out micro-distance multi-depth-of-field photographing on a microwave assembly gold wire area; s2, processing the multi-depth-of-field images, and fusing the multi-depth-of-field images into a full-clear image of a gold wire area; s3, bonding points at the two ends of the gold wire are positioned and locally buckled and selected to serve as to-be-detected features; s4, judging the quality of the gold wire bonding point; s5, extracting the edge information of the gold wire routing; and S6, calculating to obtain data information of the edge line of the gold wire so as to judge the routing quality of the gold wire. According to the gold wire area image obtained through the multi-depth-of-field image fusion technology, the accuracy of algorithms such as follow-up target recognition and edge detection is effectively improved, the gold wire routing shape is analyzed more accurately by calculating the length, width and curvature of the edge lines of the gold wire, and whether the gold wire has quality risks or not is recognized.

A solid state drive (SSD) device includes a substrate, a first buffer chip disposed on the substrate, a second buffer chip disposed on the first buffer chip, a plurality of first non-volatile memory chips connected to the second buffer chip through wire bonding, a controller configured to send a control signal to the plurality of first non-volatile memory chips through a first channel, and a first redistribution layer disposed in the substrate and configured to electrically connect the first channel to the first buffer chip, wherein the first buffer chip is connected to the first redistribution layer through flip chip bonding, and the second buffer chip is connected to the first redistribution layer through first wires.

The application discloses a kind of semiconductor chip epoxy resin encapsulation nanoscale gap control method, it is related to semiconductor packaging technical field.The present application includes: S1, wafer is taken out from vacuum packaging and is carried out dicing processing, plasma cleaning machine is cleaned, and is carried out and leads wire;S2, after wire bonding, injection molding is carried out;S3, nanoscale gap growth film method;S4, confirm growth dense film;S5, using 150 DEG C baking 55-65 minutes, ensure that internal water vapor is normally removed;S6, normal arrangement laser overflow glue and plating process, surface water removal normal baking after plating is completed;S7, after cutting rib, arrange electrical characteristic parameter test, leakage current IR, forward voltage drop VF, VB avalanche voltage.The present application solves the problem of product reliability caused by the fact that the pressure of plastic encapsulating material and injection molding equipment is not enough due to small packaging, which is beneficial to improve the problem of high-quality miniaturization of industrial equipment, and reduces the influence of device problems on system.

The invention relates to the technical field of semiconductor packaging, in particular to a packaging structure and a packaging method for correcting a vertical routing exposed position. The packaging structure for correcting the exposed position of the vertical wire bonding comprises a substrate, and is characterized in that a plurality of packaging units are arranged on the substrate, each packaging unit comprises a step-type stacked chip group, and each chip group is bonded with the substrate through a vertical lead; and one end, close to the substrate, of the vertical lead is connected with the salient point. Compared with the prior art, the packaging structure and the packaging method for correcting the exposed position of the vertical wire bonding have the advantages that interconnected salient points are grown in situ at the exposed position of the wire bonding metal, the size of the salient points can be flexibly adjusted through a photomask on the basis of a one-time patterning process, and the abnormal bridging short circuit in the subsequent welding process can be effectively improved.

The invention relates to the technical field of semiconductor packaging and integrated circuit manufacturing, belongs to the field of ultrasonic welding in metal wire bonding, and discloses a gold wire high-strength bonding structure and method on an organic substrate. One end of the gold bonding wire is welded on the chip, the other end of the gold bonding wire is welded on the substrate, and the welding end of the gold bonding wire on the substrate is fixed between the gold wire ball unit groups through superposition. According to the invention, the technical problems of two-welding crescent exposure, low bonding strength and poor reliability in the prior art are solved.

This utility model discloses a single female connector structure with a wire bonding method, relating to the field of connector technology. It includes: a housing, an assembly assembly, a protective tube, an inner protective sleeve, and an inner sleeve. The protective tube is installed outside the inner sleeve, and the inner protective sleeve is installed on the outer wall of the protective tube. The inner protective sleeve is installed inside the housing. An assembly assembly for limiting the inner protective sleeve is installed on the side wall of the housing. An assembly opening is provided on the inner wall of the housing, and limit slots are provided on the outer walls at both the upper and lower ends of the housing. The assembly assembly includes an assembly block installed within the assembly opening. Limit extension brackets are provided at both the upper and lower ends of the assembly block, and limit blocks are provided on the outer walls of the limit extension brackets. This design solves the problems of existing female connectors having many integral components, complex and inconvenient assembly, high replacement costs, and poor stability due to the lack of limit components.

A wire bonding apparatus includes: a welding head unit having a welding head with a fixture insertion hole; a fixture for releasing the welding head from gripping a welding needle; a camera unit; and a robotic arm for exchanging welding needles. The welding head unit moves the welding head to an insertion position where the fixture aligns with the fixture insertion hole, and releases the welding needle from gripping by the fixture. With the welding needle released from gripping, the robotic arm exchanges welding needles in the insertion position.

This invention provides a leadframe packaging method and structure, relating to the field of chip packaging technology. First, a leadframe is provided. Then, wire bonding is applied to the front side of each first pseudo-pin to form a first connecting arc, achieving electrical connection between multiple first pseudo-pins and / or multiple connecting pins. Next, an adhesive layer is formed on the back side of the connecting frame, and the chip is mounted on the leadframe. Then, a molding compound is formed on the front side of the connecting frame. The adhesive layer is removed, a stepped groove is formed, and finally, a back gold layer is formed. Compared to existing technologies, this invention improves the adhesive bonding strength of the adhesive layer, effectively reducing the risk of adhesive layer detachment during molding, thereby reducing the risk of back adhesive overflow contamination during molding. Furthermore, it mitigates the skin effect during electroplating, improving electroplating quality and process efficiency, resulting in better electroplating quality and higher process efficiency.

The invention provides a frequency hopping band elimination filter which comprises a coaxial resonant cavity, a metal resonant column arranged in the coaxial resonant cavity and a digital capacitor array used for frequency tuning. The digital capacitor array comprises a plurality of capacitor chip sets, each capacitor chip set comprises a plurality of capacitor chips, each capacitor chip comprises an upper electrode and a lower electrode which are oppositely arranged, the lower electrodes are directly welded on the end surfaces of the metal resonant columns, the upper electrodes are connected with bonding wires, and the bonding wires are connected with the metal resonant columns. The bonding wire is used for being electrically connected with a control circuit. The digital capacitor is connected with the metal resonance column and the control circuit in a direct welding and gold wire bonding mode, lower and more stable insertion loss is achieved in the aspect of electrical performance, and extremely high connection consistency is ensured in the aspect of mechanical reliability; and a solid physical foundation is laid for the frequency hopping stop-band filter to realize high-Q-value, high-precision and high-reliability frequency tuning in the S wave band.

The application relates to a gold-plated palladium-copper bonding wire and a preparation method and application thereof, and relates to the technical field of semiconductor materials. The wire structure of the gold-plated palladium-copper bonding wire comprises, from inside to outside, a copper alloy core material, a palladium plating layer and a gold plating layer; the copper alloy core material contains one or more than two trace alloy elements of Be, P, Ag, Ca and Al; the composition of the copper alloy core material comprises, in terms of weight percentage, Cu >= 99.99 wt%, Be 0.0005-0.005 wt%, P 0.001-0.01 wt%, Ag 0.0005-0.005 wt%, Ca 0.0003-0.002 wt%, Al 0.001-0.01 wt% and inevitable impurities <= 0.001 wt%. The gold-plated palladium-copper bonding wire can be used for BOSB / BBOS ball placement and wire bonding, long wire tail zero false reporting, ball cutting stabilization, mechanical reliability, excellent oxidation resistance and low-cost mass production.

This invention discloses an automatic wire bonding and riveting device, including a conveying worktable and a riveting mechanism, a pre-tinning mechanism, a welding mechanism, and a unloading mechanism arranged sequentially along the conveying direction of the worktable. The riveting mechanism is used to rivet and fix the pins to the PCB board; the pre-tinning mechanism is used to pre-tin the pins fixed to the PCB board; the welding mechanism is used to weld the pre-tinned pins; and several supporting fixtures corresponding to the riveting mechanism, pre-tinning mechanism, welding mechanism, and unloading mechanism are fixed on the conveying worktable. By adding a pre-tinning mechanism before the welding mechanism, this invention can pre-form a layer of tin on the end face of the pin. On the one hand, this layer can be remelted to fill the gaps between the wire and the end face of the pin, as well as the gaps caused by unevenness of the pin end face, ensuring uniform and tight tin filling. On the other hand, it can avoid PCB board damage and uncontrolled tin content caused by excessive heating time.

A wire threading method for automatically threading a bonding wire in a wire bonding apparatus includes the following steps: feeding a length of the bonding wire from a wire spool into an air path device; tensioning the bonding wire with an airflow generated in the air path device and simultaneously guiding a wire tail of the bonding wire to an operation location with the air path device; gripping and straightening the wire tail at the operation location with a wire manipulating device; conveying the straightened wire tail to a threading location with the wire manipulating device; and threading the straightened wire tail with a wire threading device through a bonding tool of the wire bonding apparatus.

This invention relates to the field of chip technology, specifically to a packaging method and structure that prevents metal diffusion and reinforces vertical wire bonding. The method includes the following steps: S1, providing a carrier board and coating the surface of the carrier board with temporary bonding adhesive; S2, stacking chips with their functional surfaces facing upwards in a staggered, stepped manner onto the carrier board to form a chipset; S3, performing vertical wire bonding on the exposed stepped positions of the chip functional surfaces; S4, after wire bonding, performing CVD thin film deposition on the surface of the chipset and the vertical leads; S5, molding, with the height of the second molding layer exceeding the height of the vertical leads; S6, curing the second molding layer, and after curing, horizontally grinding the surface of the second molding layer until the ends of all vertical leads are exposed; S7, fabricating an RDL layer and pads on the ground surface of the second molding layer; S8, forming interconnect bumps on the surface of the pads. Compared with existing technologies, this method significantly improves the resistance of vertical lines to molding impact, reducing the offset of subsequently exposed metal points to the level of a few micrometers.

The utility model provides a semiconductor bonding wire equipment clamp which comprises a first mold and a second mold, the upper surface of the first mold is fixedly connected with a heating block, and the upper surface of the second mold is fixedly provided with a pressing plate. The heating block is designed to be made of frosted breathable materials. The bottom face of the pressing plate is designed to be a continuous pressing line, and a line pressing type structure is formed. The heating block and the pressing plate are arranged, the heating block is designed to be a frosted breathable material instead of an original vacuum hole design, the problem that the size and position design of the vacuum hole is poor can be effectively solved, the compatibility is high, the bottom cannot be suspended, and it is guaranteed that the frame is stable; the pressing plate is changed into a linear pressing structure from an original point pressing structure, the surface of the frame can be contacted to the maximum extent, the existing design is easy to machine, convenient to use and not prone to abrasion in the using process, pressing can be guaranteed, cost is saved, and working efficiency is improved.

The invention relates to a semiconductor routing and packaging method and semiconductor routing and packaging equipment. The method comprises the following steps: preparing a plurality of conductive wires; a bonding device is provided, the bonding device is provided with a mesh array, and the radial size of meshes in the mesh array is larger than the maximum radial size of the conductive wires; filling conductive wires into meshes of the mesh array in the bonding device; aligning the bonding device filled with the conductive wires to a packaging substrate; wherein a plurality of first bonding pads are arranged on the packaging substrate; the conductive wires are in one-to-one alignment with the first bonding pads; a conductive wire is bonded to the first bonding pad; and removing the bonding device. The semiconductor packaging structure is used for realizing high-density routing of the semiconductor packaging structure, and meanwhile, the productivity per unit hour and the bonding uniformity and the bonding quality of the conductive wires are improved, so that the production efficiency, the production yield and the reliability of the semiconductor packaging structure are improved.

The utility model discloses a wire welding device of a winding machine, which relates to the field of wire welding devices and comprises a mounting platform, a mounting plate is fixedly mounted at the top of the mounting platform, a guide rail is arranged on one side of the mounting plate, a sliding base is sleeved on the guide rail, a transverse plate is arranged at one end of the sliding base, and the transverse plate is arranged on the mounting plate. A hydraulic rod is arranged on one side of the transverse plate, a mounting base is arranged at one end of the hydraulic rod, and a first sliding groove and a second sliding groove are sequentially formed in the side edge of the mounting base. The wire welding device of the winding machine solves the problem that an existing wire welding device of the winding machine in the background technology is poor in use effect, the installation plate is arranged, the sliding base movably installed on one side of the installation plate is started, the installation base is made to move to a designated position, and then the first sliding block and the second sliding block which are arranged on the side edge of the installation base in a sleeving mode are started. A first clamping plate is arranged at one end of the first sliding block, and a second clamping plate is arranged at one end of the second sliding block.

Provided is a method for manufacturing a semiconductor device and a manufacturing apparatus, which can improve the degree of freedom of wire shape. The method for manufacturing a semiconductor device includes: a bonding step of bonding a wire to an electrode (35a); a loop wire forming step of forming a loop wire (50a) by looping the wire from the electrode (35a) to a dummy electrode (34); a pressing step of pressing a portion of the wire; a moving step of moving the pressed portion of the wire to directly above the electrode; and a wire separating step of separating the wire from a wire supply source at the portion, as a leg wire (55a) extending vertically upward from the electrode (35a). The loop wire forming step adjusts the loop height of the wire to adjust the length of the loop wire to a prescribed length.

The invention discloses a tungsten filament wire binding force improving method and aims to solve the technical problems of insufficient binding force, high wire consumption and poor production stability in the existing tungsten filament thinning process. According to the method, electrolyte including quaternary ammonium base, absolute ethyl alcohol, 2-methyl-1-hexene, sodium sulfate and the balance deionized water in a specific proportion is adopted, a pit-shaped microcosmic rough structure is formed on the surface of the tungsten filament through the five steps of S1, electrolyte preparation, S2, equipment arrangement and inspection, S3, workpiece clamping, S4, core polishing and S5, aftertreatment and quality inspection, and meanwhile the diameter error is controlled. According to the method, the binding force of the tungsten filament and the diamond particles is remarkably improved, the wire consumption is remarkably reduced, the wire breakage rate is reduced to be lower than 5%, and the method is suitable for large-scale production of the diamond wire base material for photovoltaic silicon wafer cutting, high in stability and remarkable in economic value.

The application discloses a wafer and substrate wire bonding point quality test system, which comprises a chip assembly guide platform and a wire bonding point quality test unit on the chip assembly guide platform; the wire bonding point quality test unit comprises a straight linear expander which is perpendicular to the guide direction of the chip assembly guide platform, and further comprises a pull rod which is parallel to the telescopic rod of the straight linear expander, and one end of the pull rod is fixedly connected with the end of the telescopic rod through a connecting arm; the wire bonding point quality test unit further comprises an electromagnet which is coaxial with the pull rod; the wire bonding point quality test unit has simple structure and can form consistent and same height wire bonding point quality tests on all arch-shaped wire bonding arrays at one time.