755 results about "Wire bonding" patented technology

The invention discloses a TR assembly gold wire bonding process parameter prediction method based on a multilayer perceptron neural network, and belongs to the technical field of microwave device intelligent manufacturing. According to the method, an intelligent mapping model of gold wire bonding geometric parameters and radio frequency performance is constructed by fusing a multi-layer perceptron neural network and parameterized electromagnetic simulation. The method specifically comprises the following steps: generating 45 groups of samples in a process parameter space by adopting Latin hypercube sampling; obtaining an S parameter data set through batch processing electromagnetic simulation; box-Cox conversion and normalization preprocessing are carried out on the data; the method comprises the following steps: constructing an MLP neural network model of a 3-32-16-2 structure, and determining hyper-parameters by using Bayesian optimization; and after training is completed, rapid reverse mapping from target performance to process parameters is realized. According to the method, the number of traditional tests is reduced from more than 200 to 45, the predicted root-mean-square error of S21 is smaller than or equal to 0.12 dB, the determination coefficient is larger than or equal to 0.96, and the parameter backstepping time lt is obtained; according to the method, full-process automation from simulation, training, optimization to production and issuing is realized, and the development efficiency of the TR component is remarkably improved.

The invention relates to the technical field of advanced process control, in particular to an intelligent gold bonding wire real-time monitoring and optimizing method and system driven by the Internet of Things, and the method comprises the following steps: collecting the pressure and temperature data of a gold bonding wire, and obtaining the real-time data of the pressure and temperature of the gold wire; and based on the real-time data of the gold wire pressure and temperature, data verification is carried out, abnormal values are eliminated, and a preliminary data verification result is generated. The pressure and temperature data of the gold bonding wire are collected in real time, abnormal values are recognized and eliminated in time, the reliability of the data is guaranteed, and the accuracy of data analysis is improved; on the basis that reliable data are obtained, real-time data are compared with standard parameters, the deviation degree is rapidly positioned, and precise monitoring of the gold wire bonding process is achieved; furthermore, according to the deviation analysis result, the pressure and temperature parameters of the bonding equipment are adjusted in time, so that the actual production condition better meets the technological standard requirement.

A miniaturized interferometric integrated photonic gyroscope structure with top silicon oxide, middle silicon oxide and bottom silicon oxide deposited on a silicon substrate comprises broadband optical source or a semiconductor optical amplifier with silicon nitride ring resonator wavelength filter, connected with a thin film lithium niobate or piezoelectrically actuated silicon nitride phase modulator vertically coupled with a silicon nitride waveguide spiral loop. The silicon nitride waveguide spiral loop is patterned on thin bottom oxide layer with air trenches below it and connected with a germanium detector either through photonic wire bonding or vertically integrated through reflecting mirror embedded into silicon wafer. Various methods of coupling alternative materials are described and the potential of connecting several spiral waveguides for enhanced sensitivity in a gyroscope application.

The invention discloses a thin film light-transmitting bead black light sensor ToF packaging structure which comprises a substrate, a vertical cavity surface emitting laser, an ASIC chip, black plastic packaging glue and light-transmitting beads. The vertical cavity surface emitting laser and the ASIC chip are arranged on the substrate and are electrically connected with the substrate through routing, and light-transmitting beads are arranged on a first emitting end of the vertical cavity surface emitting laser and a first receiving end of the ASIC chip; the black plastic packaging adhesive is packaged on the vertical cavity surface emitting laser, the ASIC chip and the light-transmitting beads, the tops of the two light-transmitting beads protrude out of the top surface of the black plastic packaging adhesive, and the black plastic packaging adhesive forms an isolation retaining wall between the vertical cavity surface emitting laser and the ASIC chip, so that light emitted by the vertical cavity surface emitting laser penetrates through the light-transmitting beads and then is emitted out. The ASIC chip receives the reflected light passing through the light-transmitting bead. The invention relates to the technical field of semiconductor packaging, and can solve the technical problems of a traditional transparent optical sensor packaging structure.

The invention relates to the technical field of buzzer manufacturing, in particular to a buzzer continuous full-automatic wire welding mechanism which comprises a base, a hollow shaft motor is arranged in the center of the base, and a rotating disc station mechanism is fixedly installed on a hollow shaft of the hollow shaft motor. A supporting disc is fixedly installed at the position, located at the axis of a hollow shaft of the hollow shaft motor, of the base through a supporting base, a feeding mechanism and a discharging mechanism which are perpendicular to each other are arranged at the top end of the base around the outer ring of the rotary disc station mechanism, and an empty disc mechanical arm is arranged between the feeding mechanism and the discharging mechanism. A guide mechanism, a wire stroking mechanism, two sets of wire welding mechanisms and a steering mechanism are sequentially arranged between the feeding mechanism and the discharging mechanism in the rotating direction of the rotating disc station mechanism, and the problem that in the buzzer manufacturing process, a traditional wire welding technology mainly depends on manual operation, and the production efficiency is high is solved. The production efficiency is low, and the welding quality is unstable.

An original substrate structure is rearranged, a bonding pad comprises a bonding wire part and a die bonding part matched with the bonding wire part, the die bonding part comprises a common electrode part arranged in the center of a substrate and four die bonding sub-parts arranged in the circumferential direction of the common electrode part, and the die bonding sub-parts are used for bearing RGB chips. Wherein the arrangement mode of the RGB chips is changed into circumferential arrangement from linear arrangement, lamp bead abnormity caused by poor die bonding in the manufacturing process is reduced, meanwhile, each die bonding sub-part is electrically connected with the corresponding wire bonding part through a bonding wire, and the wire bonding parts and the common electrode parts are electrically connected with the corresponding pins, so that five pins exist on the back of the substrate, and the reliability of the substrate is improved. And finally, a bowl cup is fixedly arranged on the substrate and used for delineating any die bonding sub-part and the corresponding wire bonding part, the delineating die bonding sub-part is used for die bonding of the blue light chip, and the bowl cup is filled with white light packaging glue and used for displaying white light and improving the overall brightness of the lamp bead.

The application discloses a kind of partitioned packaging structure of laser light source for dTOF ranging system, the light-emitting hole of the laser light source is divided into multiple groups, each group corresponds to a light-emitting area respectively;Each area has several rows of light-emitting holes, and the rows of light-emitting holes in all areas are periodically interleaved arranged;Each row of light-emitting holes is communicated with the wire bonding area of the side edge of laser light source, and the wire bonding area is electrically connected with the pad of the corresponding peripheral power supply circuit by gold wire;The wire bonding areas connected by the multiple rows of light-emitting holes belonging to the same area are connected to the same pad.The partitioned packaging of the laser light source of the application is simple and compact, makes full use of the limited total area of light source light-emitting, and is easy to package, manufacture and produce.

The utility model relates to the technical field of magnetic ring winding and stranding, and discloses a multi-station rotary table stranding mechanism which comprises a base, a rotary table is arranged above the base, a rotary motor is arranged on the base, the rotary table is connected to the output end of the rotary motor through a rotary main shaft, and the rotary table is connected to the output end of the rotary motor. A clamping and positioning jig is arranged on each station arm on the rotating table, the base is provided with a wire bonding rod assembly, a twisted wire assembly and a photographing and detecting assembly corresponding to the clamping and positioning jigs, and each clamping and positioning jig comprises a magnetic ring fixing seat and a wire clamping block arranged on the side of the magnetic ring fixing seat. The magnetic ring fixing base clamps and positions a magnetic ring, the wire bonding rod assembly and the wire clamping block are matched to place a needed coil on the clamping and positioning jig for wire clamping, and then the remaining coil is twisted through the twisted wire twisting assembly.

The utility model discloses a MINI RGB (Red, Green, Blue) LED (Light Emitting Diode) lamp bead, which relates to the technical field of LEDs and comprises a substrate, a first chip, a second chip and a third chip, the front surface of the substrate is provided with a front surface circuit, the back surface of the substrate is provided with a back surface circuit, and the front surface circuit and the back surface circuit are connected through a through hole; the front circuit comprises a die bonding area, a wire bonding area and an insulating area, and the die bonding area and the wire bonding area are electrically connected through a bonding wire; the die bonding area comprises a first die bonding area, a second die bonding area and a third die bonding area which are separated from one another, the first chip is arranged in the first die bonding area, the second chip is arranged in the second die bonding area, and the third chip is arranged in the third die bonding area. According to the utility model, burning of the lamp beads and caterpillars on the display screen caused by water vapor permeation of the lamp beads can be reduced, so that the process yield and the display effect are improved.

A semiconductor device includes a semiconductor chip having a chip pad; a redistribution line disposed on the semiconductor chip; and a first dielectric layer disposed on the semiconductor chip and the redistribution line. The redistribution line is connected to the chip pad and has a wire bonding pad section. The first dielectric layer has a first opening that exposes the wire bonding pad section. The redistribution line includes a copper layer, a nickel layer on the copper layer, and a gold layer on the nickel layer. The nickel layer comprises a side surface protruding beyond a side surface of the copper layer.

The invention relates to the technical field of semiconductors, and provides a semiconductor structure and a semiconductor device, and the semiconductor structure comprises a conductive pedestal, an electronic device, and a functional connector. Wherein one side of the conductive base is provided with an external connection piece. The electronic device and the functional connecting piece are connected to the surface of the conductive base, and the electronic device is electrically conducted with the conductive base. Wherein the functional connecting piece comprises a conductive interconnection layer and a plurality of passive devices, the conductive interconnection layer is connected to the conductive base in an insulating manner, the plurality of passive devices are connected to one side, deviating from the conductive base, of the conductive interconnection layer, the plurality of passive devices form a functional circuit through the conductive interconnection layer, a first external connection end of the functional circuit is communicated with the external connecting piece, and a second external connection end of the functional circuit is communicated with the external connecting piece. And the second external end of the functional circuit is communicated with the electronic device. Through the arrangement, the problems that in the prior art, a passive device is not provided with a wire bonding electrode, so that electrical connection cannot be achieved, and at least one of the problems that the size tolerance of the passive device is large and the wire bonding workability is poor can be solved.

The invention relates to the technical field of semiconductor packaging, and discloses a bonding wire welding method based on bare chip interconnection, and the method comprises the steps: collecting and fusing acoustic response and optical reflection signals of a bonding interface in real time through a multi-mode in-situ sensing mechanism integrating acoustic resonance and surface plasmon resonance; dynamically calculating the thickness, the mechanical coupling deformation and the energy dissipation state of the intermetallic compound layer; and the ultrasonic power and the bonding force are subjected to closed-loop adjustment in combination with a model prediction control algorithm, so that the welding process is evolved along a preset optimal physical path all the time. The system comprises a multi-mode sensing welding head, a synchronous data acquisition module, a state resolving module and a self-adaptive control module. The transparent and intelligent welding process is realized, and the bonding consistency, reliability and yield of high-density interconnection are remarkably improved.

The invention belongs to the technical field of aluminum wire bonding, and particularly relates to an aluminum wire bonding and pressing device which comprises a bonding machine body, the bonding machine body comprises a feeding mechanism and a paying-off welding mechanism, the feeding mechanism and the paying-off welding mechanism are communicated through a conveying mechanism, and the conveying mechanism comprises a mounting table communicated with the feeding mechanism. An up-and-down abutting piece is installed at the position, matched with the paying-off welding mechanism, in the mounting table, a first conveying assembly and a second conveying assembly are symmetrically installed on the mounting table through the up-and-down abutting piece, the first conveying assembly comprises a pushing piece and a conveying piece, and L-shaped protection tables are fixedly installed at the upper end of the mounting table in a front-and-back symmetry mode; according to the invention, in the process of abutting and limiting the chips through the up-and-down movement of the up-and-down abutting piece, the transportation piece transports the subsequent chips to make the subsequent chips abut against the previous chips, and then when the up-and-down abutting piece moves upwards to be lifted, the pushing piece accurately pushes the chips which abut against each other towards the direction welding mechanism to make the chips be aligned with the up-and-down abutting piece.

The present disclosure provides a wire bonding apparatus, a wire bonding method and a semiconductor device. The wire bonding apparatus includes: a wire tube for containing the wire and including a wire exit; a wire heating assembly located at a side of the wire exit; and a pre-shaping assembly located at a side of the wire tube and including a wire pre-pressing face; the pre-shaping assembly having a first state in which the wire pre-pressing face of the pre-shaping assembly is configured to abut the wire tube and a second state in which the pre-shaping assembly is configured to disengage from the wire tube. The wire bonding apparatus, the wire bonding method and the semiconductor device as provided in the present disclosure can reduce or eliminate the cratering effect.

The invention relates to the technical field of continuous casting furnaces, in particular to a gold wire bonding continuous casting furnace which comprises a heating furnace, a cooling chamber and a winding chamber, a heating groove used for heating metal materials is formed in the heating furnace, a casting opening is formed in the bottom of the heating groove, a cooling pipe is arranged in the cooling chamber and divided into an outer pipe and an inner pipe, and the top end of the inner pipe communicates with the casting opening; a heat dissipation cavity is formed between the inner pipe and the outer pipe, an air cooling cavity is formed in the winding chamber, the air cooling cavity is installed at the bottom of the heat dissipation cavity and communicates with the inner pipe, a gas booster pump is fixedly installed on the outer wall of the air cooling cavity, a first heat dissipation pipe is arranged in the heat dissipation cavity, and the first heat dissipation pipe communicates with the gas booster pump and the air cooling cavity. According to the gold bonding wire cooling device, the air cooling cavity is formed, inert gas is used for being matched with the cooling pipe, the gold bonding wire is cooled through the cooling pipe and then air-cooled again, the cooling efficiency of the gold bonding wire is improved, and the cooling efficiency of the gold bonding wire is guaranteed under the condition that it is guaranteed that the gold bonding wire is clean and tidy.

An electronic module for generating light pulses includes an electronic card or interposer, a LASER-diode lighting module, and a LASER-diode driver module. The interposer has an edge recess in which the lighting module is completely inserted. The driver module is arranged on top of the interposer and the lighting module. The electrical connections for driving the LASER diodes are obtained without resorting to wire bonding in order to reduce the parasitic inductances.

The invention belongs to the field of semiconductor devices, provides a gallium nitride high-electron-mobility transistor integrated with a Schottky diode and a preparation method of the gallium nitride high-electron-mobility transistor, and aims to solve the problem that a conventional gallium nitride high-electron-mobility transistor (GaN HEMT) lacks a body diode. According to the invention, monolithic integration of the SBD and the GaN HEMT is realized through structural design, a low-impedance path is provided for reverse current, and the integration mode not only retains the original high performance characteristic of a GaN device, but also additionally endows the GaN device with reverse conduction and reverse recovery capabilities; moreover, through the structural design, the SBD can be synchronously completed on the basis of the existing GaN HEMT process, a special process or new equipment is not needed, and the cost is effectively controlled while the performance improvement is ensured; compared with an external interconnection diode scheme, parasitic inductance caused by lead bonding is eliminated, the voltage overshoot and ringing phenomena in the switching process are remarkably reduced, high-frequency switching application is facilitated, and switching loss can be greatly reduced.

The invention discloses an intelligent bonding silver wire equipment control method and system based on the Internet of Things, and relates to the technical field of equipment control. An intelligent bonding silver wire equipment control system based on the Internet of Things comprises an equipment data acquisition module, an equipment abnormity judgment module and an equipment linkage control module. According to the method, the bonding external environment data, the bonding production process data and the bonding equipment state data are collected in real time, and the silver wire surface data are combined, so that the precise control on the bonding silver wire equipment can be realized, the production parameters can be optimized, and the bonding quality can be improved; in combination with dynamic equipment control analysis and dynamic silver wire state analysis, an environment control factor, a production process control factor, an equipment state control factor and a silver wire bonding process influence factor can be adjusted in real time, so that equipment can adapt to different production conditions, and the production flexibility is improved.

The utility model discloses a tunable laser light source for spectrum sensing, which comprises a tunable DFB laser array chip, a star coupler chip, an SOA array chip and an optical fiber array which are connected through waveguides, tunable lasers in each row are connected through waveguides, the lasers with adjacent wavelengths are distributed on different waveguides, and the optical fiber array is connected with the star coupler chip. The light output end of each waveguide is provided with an SOA. According to the utility model, the star-shaped coupler is adopted to uniformly distribute energy of light with different wavelengths of the tunable laser array to each light output waveguide, and the energy respectively enters different fiber grating sensors or fiber MEMS sensors and the like to realize temperature or strain sensing at the same time and realize multiplexing tree-shaped sensing and demodulation at the same time; the energy loss in the transmission process is reduced; the chips of different material systems are coupled by adopting a photon lead bonding or butt joint growth technology, the photon lead bonding technology does not need high-precision alignment, the processing efficiency is high, low-cost hybrid integration among the chips is realized, and the device is integrally compact.

The utility model discloses a light emitting component and a light module. The light emitting component comprises an emitting shell. A first through hole is formed in one side of the light emitting shell, and an electric connector is arranged on the side wall opposite to the first through hole. The optical fiber adapter is connected with the first through hole. One side of the electric connector is located inside the transmitting shell, and the other side of the electric connector is located outside the transmitting shell. A first bonding pad area and a second bonding pad area which are different in height are arranged on the side, located in the transmitting shell, of the electric connector. The semiconductor cooler is located in the emission shell and connected with the bottom of the emission shell. The semiconductor cooler comprises a first substrate and a second substrate, wherein the first substrate is connected with the bottom of the emission shell. And a refrigerator electrode is arranged on the upper surface of the first substrate. The first bonding pad area is electrically connected with the refrigerator electrode. The thickness of the first substrate is larger than that of the second substrate, the height difference between the first bonding pad area and the refrigerator electrode is reduced, and the routing length between the first bonding pad area and the refrigerator electrode is reduced.

According to one embodiment, a controller of a wire bonding apparatus is configured to calculate a height of a bump based on a diameter of a ball-shaped portion detected by a diameter detecting part, a first position of a bonding tool detected by a position detecting part when a load sensor detects a load at a first bonding point, and a second position of the bonding tool when the bonding tool is lowered at the first bonding point, and to bond a wire based on the calculated height of the bump.

The invention relates to the technical field of wire welding machines, in particular to a bonding head assembly movement mechanism of a wire welding machine. The loudspeaker comprises a binding head assembly, a voice coil motor and elastic pieces, the tail end of the binding head assembly is connected to the power end of the voice coil motor, the power end of the voice coil motor can drive the binding head assembly to swing back and forth, and the elastic pieces are obliquely arranged on the left side and the right side of the power end of the voice coil motor respectively. The upper ends of the two elastic sheets are fixed positions, the fixed positions of the two elastic sheets are both fixed on the welding wire machine body, the lower ends of the two elastic sheets are flexible positions, and the flexible positions of the two elastic sheets are respectively connected to the left side and the right side of the power end of the voice coil motor. The voice coil motor is matched with the elastic piece to drive the bonding head assembly to achieve the same swing effect as a solid rotating shaft, interference between the solid rotating shaft and the working face of the wafer is avoided, wafer machining is not limited by the length of the bonding head assembly, the working range of the bonding head is enlarged to a large extent, and the working efficiency is improved. And the processing size of the wafer can be improved from 6 inches to 12 inches.

The invention provides an ultra wide band millimeter wave transition structure based on gold wire bonding, and relates to the technical field of millimeter wave chip packaging, and the transition structure comprises a substrate, a rectangular cavity, a chip, a parallel gold wire connection structure, a stepped grounding coplanar waveguide GCPW matching structure, and a plurality of blind holes. The substrate comprises a top dielectric layer, a middle metal layer and a bottom metal layer, the rectangular cavity is arranged on the top dielectric layer; the chip is fixed in the rectangular cavity; the parallel gold wire connecting structure is used for connecting the chip and the stepped grounding coplanar waveguide GCPW matching structure; and the plurality of blind holes vertically penetrate through the substrate, are positioned in an area right below the edge of the rectangular cavity and gold wire bonding, are connected with the middle metal layer and the bottom metal layer, and are used for suppressing self-excited oscillation. According to the method provided by the invention, the transition from the chip to the substrate with the average loss lower than 0.28 dB is realized within the frequency band of 30-100GHz.

The invention discloses an eSSD packaging structure, which increases the product capacity requirement, and improves the routing reliability while meeting the higher stacking requirement. The display panel includes: a first substrate; a second substrate; a plurality of Nand storage chip assemblies, wherein each Nand storage chip assembly comprises a Nand storage chip and a chip adhesion film; and a control chip. The control chip is attached to the back face of the first substrate and packaged through a first plastic package layer, the two sides of the front face of the first substrate are each provided with two stacked storage chip sets, Nand storage chip assemblies of each stacked chip set are arranged in a staggered mode, connecting welding spots are exposed, the second substrate is located on the upper layer of the stacked storage chip sets, and the second substrate is located on the lower layer of the stacked storage chip sets. The connection and welding of each group of Nand storage chip components are connected with corresponding welding spots right above the second substrate through vertical gold wires, the height areas of the front surface of the first substrate and the bottom surface of the second substrate are packaged through a second plastic packaging layer, the front surface of the second substrate is provided with a plurality of upwards convex solder balls, and the solder balls are used for carrying out connection operation.

The invention discloses a semi-automatic deep-cavity fine aluminum wire bonding machine, and relates to the technical field of semiconductor processing equipment, the semi-automatic deep-cavity fine aluminum wire bonding machine comprises a machine body, a hydraulic cylinder and a transverse plate, the top end of the inner side of the machine body is provided with the hydraulic cylinder through the transverse plate, and the bottom end of the hydraulic cylinder is provided with a feeding mechanism. The limiting mechanism A is used for automatically and accurately limiting the side wall of the packaging substrate to ensure that the packaging substrate is stably and accurately aligned in the horizontal direction, and the limiting mechanism B is used for automatically and accurately limiting the top wall of the packaging substrate to further improve the positioning accuracy in the vertical direction; by means of the double limiting, the step of manual alignment is omitted, the production efficiency is remarkably improved, the bonding precision is greatly improved, the bonding quality of the thin aluminum wires and the reliability and performance of a whole semiconductor packaging product are guaranteed, meanwhile, the structure is flexible and adjustable, the structure can easily adapt to packaging substrates of different sizes, and the production cost is reduced. And the application range of the equipment is greatly expanded.

The invention discloses a superfine pitch bonding wire chopper structure with a side wire incoming function and a using method thereof, and relates to the technical field of semiconductor packaging, the superfine pitch bonding wire chopper structure comprises a workbench, a lifting platform, a lifting counting mechanism, a switching mechanism, a pay-off pipe, a chopper mechanism and a smoke suction mechanism, and the lifting platform is slidably arranged between the workbench and a mounting frame; the lifting counting mechanism is arranged on the mounting frame, the switching mechanism is arranged on the lifting table, the chopper mechanism is arranged on the lifting table, and the smoke suction mechanism is arranged on the lifting table. By means of the arrangement mode that the lifting counting mechanism, the switching mechanism, the pay-off pipe, the chopper mechanism and the smoke suction mechanism are matched, after the designated number of times is reached, the chopper is switched through the switching mechanism, bonding quality reduction caused by abrasion is avoided, the switched chopper is cleaned, and the bonding quality is improved. And meanwhile, the smoke suction mechanism can suck cleaned impurities and possibly generated smoke, smoke and chippings are effectively collected, manual intervention is reduced in the whole process, and the production efficiency is improved.

The invention relates to the technical field of microelectronics and MEMS manufacturing, in particular to a bulk acoustic resonator with a double-layer piezoelectric film and a preparation method thereof, according to the method, a heterogeneous integrated key structure is formed by a first piezoelectric layer and a second piezoelectric layer which are deposited on the two sides of a middle electrode layer respectively, the physical and process limits of a single-layer piezoelectric film FBAR are broken through, the high-frequency band is improved, and the high-frequency band is improved. A wider bandwidth is realized; middle electrode layer tuning is combined with back silicon through hole leading-out, front routing inductance is eliminated, and the low-loss characteristic of the filter under high frequency is guaranteed; the self-heating problem under large bandwidth and high power is effectively inhibited through heat dissipation integrated packaging, and the power bearing capacity is improved; the method is compatible with a CMOS (complementary metal oxide semiconductor) process and can be directly embedded into an existing production line, so that the volume is further reduced while the bulk acoustic wave resonator with the double-layer piezoelectric film can effectively cover a frequency band of more than 3GHz, and the problem that a single-layer piezoelectric film and a matched process thereof cannot meet the requirements of a next-generation radio frequency front end on high frequency, large bandwidth, high power and wafer-level packaging is solved.

The present invention discloses a method for fabricating an intelligent label chip molded packaging module by Au-Sn eutectic soldering, which utilizes the Au bump joints of the intelligent label chip itself to form reliable Au-Sn eutectic soldering with the tin plating layer on the carrier tape or lead frame. The method for fabricating an intelligent label chip molded packaging module by Au-Sn eutectic soldering of the present invention neither requires the commonly used silver plating layer on the metal carrier tape or lead frame, nor requires wire bonding interconnection between the chip Au bump joints and the carrier tape or lead frame, which can reduce the cost of using precious metals, greatly reduce the thickness of the entire intelligent label chip module, has excellent reliability, and can perform high-density intelligent label chip molded packaging on the carrier tape. The present invention also discloses an application of the method for fabricating an intelligent label chip molded packaging module by Au-Sn eutectic soldering.

The invention discloses a microwave assembly gold wire quality visual detection method based on multi-depth-of-field image fusion. The method comprises the following steps: S1, carrying out micro-distance multi-depth-of-field photographing on a microwave assembly gold wire area; s2, processing the multi-depth-of-field images, and fusing the multi-depth-of-field images into a full-clear image of a gold wire area; s3, bonding points at the two ends of the gold wire are positioned and locally buckled and selected to serve as to-be-detected features; s4, judging the quality of the gold wire bonding point; s5, extracting the edge information of the gold wire routing; and S6, calculating to obtain data information of the edge line of the gold wire so as to judge the routing quality of the gold wire. According to the gold wire area image obtained through the multi-depth-of-field image fusion technology, the accuracy of algorithms such as follow-up target recognition and edge detection is effectively improved, the gold wire routing shape is analyzed more accurately by calculating the length, width and curvature of the edge lines of the gold wire, and whether the gold wire has quality risks or not is recognized.