The invention discloses a vertical-cavity surface-emitting
laser which comprises a substrate, a first Bragg reflector, a first limiting layer, an active region, a second limiting layer, a second Bragg reflector and an
Ohmic contact layer which are arranged in a laminated manner, wherein the active region adopts a
quantum well structure, a potential
barrier layer is made of InGaAlAs, and a
potential well layer is made of InGaAsN; a heavily-doped
tunnel junction and a third limiting layer are also arranged between the second limiting layer and the second Bragg reflector; an oxidized limiting layer is also arranged in the second limiting layer. The invention also provides a preparation method of the
laser. The
laser has the advantages that the laser uses an InGaAsN / InGaAlAs
material system as the active region, has large
conduction band order ratio and can effectively limit injected carriers, so that the
threshold current is reduced, and the laser
gain is improved; on an isometric
wavelength band of 1550 nm, the content of N required by an active region material is lower, and devices with high
material quality are easy to obtain.