2 results about "Si doped" patented technology

The utility model discloses an InAs / GaSb superlattice medium / long wave double-color infrared detector based on an nBn structure, which belongs to the technical field of optoelectronic devices and comprises a GaSb substrate, a non-doped GaSb buffer layer, a 14ML InAs / 7ML GaSb superlattice Si doped layer, a 14ML InAs / 7ML GaSb superlattice unintentional doped layer, a 4ML InAs / 7ML GaSb superlattice unintentional doped layer, a 8ML InAs / 6ML GaSb superlattice unintentional doped layer and a 8ML InAs / 6ML GaSb superlattice Si doped layer which are sequentially arranged from bottom to top. The medium / long wave absorption layers of 14ML InAs / 7ML GaSb superlattices and 8ML InAs / 6ML GaSb superlattices are combined, so that high absorption efficiency and low crosstalk of medium / long wave band response are realized, and low dark current and wide temperature range working capability are realized.

This invention discloses a multilayer TOPCon structure for the interface of perovskite / silicon tandem solar cells and its fabrication method. The multilayer TOPCon structure comprises, from bottom to top: a silicon substrate, multiple alternating layers of SiO2. x The tunneling layer and the poly-Si doped layer, wherein: SiO x The tunneling layer consists of 1 to 5 layers, with a single layer thickness of 0.8 to 1.2 nm, and SiO₂. x The total thickness of the tunneling layer is ≤3nm; and SiO x The tunneling layer is doped with nitrogen (N), with an N / O atomic ratio of 0.05–0.15; the number of poly-Si doped layers is related to the SiO₂ content. x The tunneling layer is consistent, and the total thickness of the poly-Si doped layer is 60~150 nm. P is used as the main dopant in the poly-Si doped layer, with an average concentration of activated P atoms of 1×10⁻⁶. 20 ~1×10 21 cm ‑3 Furthermore, the P doping concentration in the poly-Si doped layer increases in a gradient from the side closest to the silicon substrate to the side furthest from the silicon substrate. In this invention, the combination of multilayer TOPCon architecture and precise doping modification optimizes the carrier transport between the top and bottom cells, and the multilayer poly-Si structure effectively reduces total optical parasitics and improves the light capture efficiency of the tandem cell.