1 results about "Si doped" patented technology

This invention discloses a multilayer TOPCon structure for the interface of perovskite / silicon tandem solar cells and its fabrication method. The multilayer TOPCon structure comprises, from bottom to top: a silicon substrate, multiple alternating layers of SiO2. x The tunneling layer and the poly-Si doped layer, wherein: SiO x The tunneling layer consists of 1 to 5 layers, with a single layer thickness of 0.8 to 1.2 nm, and SiO₂. x The total thickness of the tunneling layer is ≤3nm; and SiO x The tunneling layer is doped with nitrogen (N), with an N / O atomic ratio of 0.05–0.15; the number of poly-Si doped layers is related to the SiO₂ content. x The tunneling layer is consistent, and the total thickness of the poly-Si doped layer is 60~150 nm. P is used as the main dopant in the poly-Si doped layer, with an average concentration of activated P atoms of 1×10⁻⁶. 20 ~1×10 21 cm ‑3 Furthermore, the P doping concentration in the poly-Si doped layer increases in a gradient from the side closest to the silicon substrate to the side furthest from the silicon substrate. In this invention, the combination of multilayer TOPCon architecture and precise doping modification optimizes the carrier transport between the top and bottom cells, and the multilayer poly-Si structure effectively reduces total optical parasitics and improves the light capture efficiency of the tandem cell.