LED epitaxial structure and growth method therefor

Abstract

The invention aims to provide an LED epitaxial structure and a growth method therefor. The growth method specifically comprises the steps of processing a substrate, enabling a low-temperature GaN core-forming layer, a high-temperature GaN buffer layer, a non-doped u-GaN layer, a Si-doped n-GaN layer, a multi-period quantum well (MQW) light emitting layer, a P type AlGaN layer, a P type GaN layer and a P type GaN contact layer to be grown, and then reducing temperature and cooling, wherein the step of growing a p type GaN layer is performed by the steps of enabling the P type GaN layer to be grown at a low temperature in N<2> atmosphere firstly, then enabling the P type GaN layer to be grown at a high temperature in H<2> atmosphere, and finally enabling the P type GaN layer to be grown at a high temperature in N<2>/H<2> mixed gas so as to lower the working voltage of the LED and improve the light emitting efficiency of the LED. The invention also aims to provide the LED epitaxial structure produced by the growth method for the epitaxial structure; according to the structure, the conventional high-temperature p type GaN layer structure is changed into the p type GaN layer structure with the variable atmospheres of low-temperature N<2> atmosphere, high-temperature H<2> atmosphere and high-temperature N<2>/H<2> mixed gas, so that the problems that the luminous power of the LED is limited by P layer hole concentration and the driving voltage is limited by P layer hole mobility are solved.

Description

technical field [0001] The present application relates to the technical field of LED epitaxial design application, in particular, to an LED epitaxial structure and a growth method thereof. Background technique [0002] At present, LED (Light Emitting Diode, light-emitting diode) is a kind of solid-state lighting. The advantages of small size, low power consumption, long service life, high brightness, environmental protection, and durability are recognized by consumers. The scale of domestic production of LEDs is also gradually expanding; the market The demand for LED brightness and luminous efficiency is increasing day by day. How to grow better epitaxial wafers has been paid more and more attention. Because of the improvement of the quality of epitaxial layer crystals, the performance of LED devices can be improved. The ability and stability will increase with the improvement of the crystal quality of the epitaxial layer. [0003] The traditional LED epitaxial structure gr...

AI Technical Summary

Problems solved by technology

High optical efficiency means high optical power and low driving voltage, but the optical power is limited by the hole concentration of the P layer to a certain extent, and the driving voltage is limited by the hole mobility of the P layer to a certain extent. The recombination efficiency of holes and electrons in the layer increases, the high optical power increases, and the hole mobility of the P layer increases to reduce the driving voltage.

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