The invention discloses a
semiconductor structure and a corresponding
chip and product. The structure comprises a
silicon-based
integrated circuit and a bump structure arranged on the
silicon-based
integrated circuit. The bump structure sequentially comprises a UBM layer, a
copper conductor layer, a
nickel conductor layer and a gold conductor layer. The exposed side walls of the UBM layer, the
copper conductor layer and the
nickel conductor layer are coated with a
metal protection layer composed of
palladium,
palladium alloy,
platinum or
platinum alloy, and the
protection layer does not cover the gold conductor layer. According to the preparation method, the step-shaped side wall is formed through
etching steps in a specific sequence, selective self-growth of the protective layer on the
titanium /
copper /
nickel side wall is achieved through
chemical plating based on
metal equilibrium potential difference, and the protective layer is not deposited on the
gold surface. The problems of poor
welding and
short circuit caused by
oxide generated by side wall oxidation and copper
diffusion of the copper-nickel-gold bump are effectively solved, the long-term reliability is remarkably improved, meanwhile, the using amount of
precious metal is small, the technology is ingenious, and the method is particularly suitable for the high-end display field of
liquid crystal driving chips and the like.