89results about How to "Low working voltage" patented technology

The invention provides a light-emitting diode chip and a preparation method thereof, and the preparation method of the light-emitting diode chip comprises the steps: providing a substrate needed by growth, and sequentially depositing an N-type semiconductor layer, an active light-emitting layer and a P-type semiconductor layer on the substrate; preparing an N-type conductive through hole in the P-type semiconductor layer; preparing a current expansion layer on the P-type semiconductor layer and the N-type conductive through hole; preparing a current blocking layer on the current expansion layer, the P-type semiconductor layer which is not covered by the current expansion layer and the N-type conductive through hole which is not covered by the current expansion layer; preparing a current blocking layer through hole in the current blocking layer; preparing a first semiconductor layer on the current blocking layer and the current blocking layer through hole; stripping the substrate to completely expose the bottom of the N-type semiconductor layer; preparing a second semiconductor layer at the bottom of the N-type semiconductor layer; and preparing an N-type bonding pad on the first semiconductor layer.

The invention discloses a neuromorphic transistor taking lithium niobate or lithium tantalate single crystal as a gate medium and a preparation method of the neuromorphic transistor, and belongs to the technical field of semiconductor devices. The neuromorphic transistor comprises a substrate layer, a bottom gate electrode layer, a gate dielectric layer and a patterned electrode assembly which are arranged from top to bottom. The material of the substrate layer comprises single crystal LiNbO3 (0001) or single crystal LiTaO3 (0001); the bottom gate electrode layer comprises a single crystal ZnSnO3 thin film; and the gate dielectric layer comprises a single crystal LiNbO3 film or a single crystal LiTaO3 film. A gate dielectric layer can be directly deposited after a single crystal ZnSnO3 thin film is epitaxially grown on the single crystal LiNbO3 (0001) or single crystal LiTaO3 (0001) substrate, the situation of lattice mismatch is effectively avoided, meanwhile, introduction of a buffer layer is reduced, thin film growing methods in a device structure are physical vapor deposition methods, safety is higher, and process cost is lower.

This invention relates to the field of semiconductor optoelectronic device technology, specifically to a method and application for reducing the contact resistance of high-Al-content n-AlGaN materials in device manufacturing processes. The method involves surface atom adsorption and annealing of the n-AlGaN layer under a protective gas atmosphere; the atoms are Si and N atoms. This method significantly increases the carrier concentration on the material surface, thereby contributing to excellent ohmic contact performance and reducing the material's contact resistivity. It solves the problem of difficult ohmic contact preparation for high-Al-content n-AlGaN materials, especially the difficulty in forming ohmic contacts after etching. The method is simple and reproducible, effectively avoiding the complexity and instability of existing processes such as acid / alkali corrosion or high-temperature annealing. It ensures large-scale mass production and has no adverse effects on subsequent device fabrication, exhibiting good process compatibility.

The present invention relates to the technical field of semiconductor materials, and discloses an epitaxial wafer of a light-emitting diode and a preparation method thereof, wherein the epitaxial wafer comprises a substrate, a buffer layer, a non-doped GaN layer, an n-type semiconductor layer, a multi-quantum well layer, an electron blocking layer and a p-type semiconductor layer stacked in sequence on the substrate; wherein the n-type semiconductor layer comprises a C-Si co-doped gallium-containing nitride layer, a first Si-doped / second Si-doped gallium-containing nitride layer, a BN / Mg-doped AlScN layer and a SiN / gallium-containing nitride layer stacked in sequence from bottom to top. The implementation of the present invention can provide a sufficient Si doping concentration, while helping to reduce line defects, blocking and changing the upward extension of line dislocations, thereby making the crystal quality of the n-type semiconductor layer high, the brightness of the LED device high, and the luminous efficiency high.

The application discloses a compound and application thereof, and belongs to the technical field of display. A chemical structural formula of the compound is shown in the following formula: wherein Z1 and Z2 are independently O, S or Se; R1 and R2 are independently ; or one of R1 and R2 is ; Z3 to Z6 are independently N or CR4; the other of R1 and R2, R3 and R4 are independently hydrogen, deuterium, fluorine, cyano, C1-C10 alkyl, C1-C10 perfluoroalkyl, C1-C10 perfluoroalkoxy, C1-C10 perfluoroalkylthio, pentafluorothio, one of substituted or unsubstituted C6-C30 aryl, or substituted or unsubstituted C3-C30 heteroaryl; and A is O, S, S=O, SO2 or Se. The compound has high charge transfer capacity and thermal stability, and an OLED device prepared based on the compound has low working voltage, high efficiency and long cycle life.

This invention discloses an epitaxial wafer for a deep ultraviolet (UV) light-emitting diode (LED) and its fabrication method, relating to the field of semiconductor optoelectronic devices. The UV LED epitaxial wafer includes a substrate and a buffer layer, an N-type AlGaN layer, an active layer, an electron blocking layer, and a P-type AlGaN layer sequentially grown on the substrate. The active layer has a periodic structure, with each period comprising a sequentially stacked quantum well layer and a quantum barrier layer, and the number of periods in the active layer is ≥2. The quantum barrier layer comprises a sequentially stacked AlInGaN layer and a P-AlInGaN layer. Implementing this invention can effectively improve the luminous efficiency of deep ultraviolet LEDs.

The invention discloses a magnetic random access memory unit, a magnetic random access memory, a phase inverter and a memory, and the magnetic random access memory unit comprises a substrate; the free layer structure is located on the substrate, the free layer structure comprises one or more layers of stacked structures, the stacked structures comprise a first free layer and a plurality of second free layers which are located in the first free layer and are separated from each other, and the first free layer and the second free layers are made of different materials; the multiple layers of stacked structures are stacked in the direction perpendicular to the surface of the substrate; a tunnel layer on the free layer structure; and the fixed layer is positioned on the tunnel layer. The magnetic random storage unit can be used as a basic unit of a logic device and a memory, so that the logic device and the memory have relatively low power consumption, relatively low working voltage and high-temperature reliability.

The invention discloses an opening and closing mechanism and a control method and device thereof, a storage medium and a household appliance, the opening and closing mechanism comprises an opening and closing clamping plate, the opening and closing clamping plate is opened and closed through a motor, and the control method comprises the following steps: acquiring position information of the opening and closing clamping plate in the closing process of the opening and closing clamping plate; when it is determined that the opening and closing clamping plate is located at a first preset position according to the position information, the working voltage of the motor is controlled to be reduced by a preset voltage threshold value, and whether the motor generates locked-rotor current or not is judged; if the motor generates the locked-rotor current, the motor is controlled to rotate reversely until the opening and closing clamping plate is located at a second preset position, and then the motor is controlled to rotate forwards to close the opening and closing clamping plate; and if the motor does not generate the locked-rotor current and the opening and closing clamping plate is located at a third preset position, the working voltage of the motor is controlled to be increased to a preset voltage threshold value until the opening and closing clamping plate is closed, so that the anti-pinch function of the opening and closing mechanism is achieved, the service life of the opening and closing mechanism is prolonged, the use safety of the opening and closing mechanism is improved, and meanwhile the personal safety of a user is guaranteed.

The invention discloses a MINI RGB LED lamp bead with a built-in resistor and a preparation method of the MINI RGB LED lamp bead, and relates to the technical field of LEDs, the MINI RGB LED lamp bead with the built-in resistor comprises a substrate, a first chip, a second chip, a third chip and a chip resistor; the front surface of the substrate is provided with a front circuit, the back surface of the substrate is provided with a back circuit, and the front circuit and the back circuit are connected through a through hole; the front circuit comprises a die bonding area, a bonding wire area, an insulating area and a groove area; the die bonding area comprises a first die bonding area, a second die bonding area and a third die bonding area which are separated from one another, the first chip is arranged in the first die bonding area, the second chip is arranged in the second die bonding area, and the third chip is arranged in the third die bonding area; a groove is formed in the groove area, and the chip resistor is arranged in the groove and connected with the first chip in series. According to the invention, burning of the lamp beads and caterpillars on the display screen due to water vapor permeation can be reduced, so that the process yield and the display effect are improved.

The invention belongs to the related technical field of microelectronic devices, and discloses a ferroelectric vertical transistor based on an oxide semiconductor and a preparation method thereof, and the ferroelectric vertical transistor comprises a substrate, a gate metal electrode, a gate ferroelectric layer, a gate insulating dielectric layer, an island-shaped source electrode, the oxide semiconductor, a source electrode contact electrode and a top drain electrode. According to the invention, the hafnium oxide-based ferroelectric material is used as the gate ferroelectric material, so that the information writing and reading can be realized, the regulation effect of the gate voltage on the channel is amplified, the ratio of the gate capacitance to the channel capacitance is reduced, and the working voltage of the transistor is reduced, thereby reducing the power consumption of the ferroelectric vertical transistor. Besides, a gate insulating dielectric layer is prepared on the gate ferroelectric film to promote the formation of a ferroelectric phase, and the introduction of the insulating dielectric layer can inhibit the injection of charges, so that the polarization state of the hafnium oxide-based ferroelectric material is adjusted, and the overall performance of the ferroelectric transistor is improved.

The invention discloses an N-channel enhanced gallium nitride transistor structure and a manufacturing method thereof, and relates to the technical field of integrated circuit manufacturing, the transistor structure comprises an epitaxial wafer, a gate dielectric layer, a barrier layer, a gate, a gate sidewall, a source and a drain; the manufacturing method comprises the steps of 1, providing an epitaxial wafer, 2, depositing a gate dielectric layer and a gate, 3, oxidizing polycrystalline silicon, and removing a silicon nitride dielectric in a source and drain region, 4, carrying out secondary epitaxial growth of a barrier layer, 5, depositing to form a gate side wall, and carrying out back etching, 6, depositing a source and drain metal layer, and forming a source and a drain. 7, depositing an intermetallic dielectric layer, and then completing a back-end process; polycrystalline silicon is used as gate metal, and a side wall process and a self-alignment process are combined to form small-size gate-source and gate-drain structures, so that the size of the device is reduced, and the working voltage of the device is reduced.

The application provides a host material, a double-host-containing organic electroluminescent material and an organic electroluminescent device, the host material has a structure shown in general formula 1, and the host material or the double-host-containing organic electroluminescent material of the application is applied to the organic electroluminescent device, so that the driving voltage of the device can be reduced, the luminous efficiency is improved, and the service life is prolonged.

The invention provides an oscillating circuit of an MEMS resonator. A bias circuit provides direct current bias voltage and tail current source bias voltage of PMOS cross coupling pair transistors for a main oscillator core circuit; therefore, each branch in the main oscillator core circuit can be connected in series with only three transistors, and the three transistors can realize the function of generating oscillation sine wave signals by the main oscillator core circuit without stacking more transistors; the number of series transistors is small, the working voltage of the main oscillator core circuit is correspondingly reduced, the main oscillator core circuit can work in a low power supply voltage environment, the power consumption of the main oscillator core circuit is reduced, and in other words, the oscillation circuit of the MEMS resonator provided by the invention can improve the reliability of the MEMS resonator on the premise of ensuring low phase noise and providing the same negative resistance. Therefore, the power consumption of the oscillator is reduced, and the quality factor of the oscillator is improved.

The invention belongs to the technical field of memristors, and relates to a preparation method of a spider silk memristor for simulating nerve synapses, which specifically comprises the following steps: coating a conductive layer with a NaOH-spider silk protein solution to obtain a functional layer, and depositing an electrode layer on the functional layer to obtain the spider silk memristor for simulating nerve synapses. The preparation process of the NaOH-spider silk protein solution comprises the steps that degummed spider silk is dissolved in a NaOH aqueous solution, suction filtration and centrifugal treatment are directly carried out, the NaOH-spider silk protein solution is obtained, and the concentration of the NaOH aqueous solution is 50-200 mM. The memristor prepared by the method disclosed by the invention has a bionic nerve synapse characteristic, is stable in signal transmission, and can realize multiple stable erasing processes from a high resistance state to a low resistance state, so that the stability, durability and consistency of the memristor are remarkably improved.

According to the field effect transistor based on component and gate voltage combined regulation and control and the preparation method thereof, a silicon dioxide layer is arranged on an intrinsic low-resistance silicon substrate, a source metal electrode and a drain metal electrode are arranged on the silicon dioxide layer, the source metal electrode and the drain metal electrode are metal composite electrodes and comprise a chromium electrode and a gold electrode, the bottom layer filled with channels of the source electrode and the drain electrode is a bismuth-selenium-oxygen nanosheet, and the bottom layer filled with the bismuth-selenium-oxygen nanosheet is a bismuth-selenium-oxygen nanosheet. A black arsenic-phosphorus nanosheet and a top gate bismuth-selenium-oxygen nanosheet dielectric layer are arranged on the bismuth-selenium-oxygen nanosheet, and the source electrode, the drain electrode and the gate electrode are connected with corresponding lead electrodes and are used for being connected with an external test circuit. According to the field effect transistor based on combined regulation and control of the components and the gate voltage and the preparation method of the field effect transistor, through packaging of the bismuth-selenium-oxygen nanosheets, the components of black arsenic and phosphorus and the gate voltage of the top gate are adjusted, so that the photoelectric performance of the device in the visible light, near-infrared and medium-wave infrared ranges is optimized.

The present invention relates to diaza-dibenzofuran and diaza-dibenzothiophene derivatives and to electronic devices containing these compounds, in particular organic electroluminescent devices containing these compounds in the form of a host material, optionally in combination with other host materials and suitable phosphorescent emitters, the invention also relates to suitable mixtures and formulations of said compounds.

The present invention discloses an energy conversion / storage system based on high-conductivity / thermal-conductivity ultra-high-performance concrete and its application, which belongs to the field of intelligent / multifunctional cement-based material preparation and application. The present invention uses molybdenum-chromium stainless steel microwires with micron-level diameter, excellent electrical and thermal conductivity, high mechanical and stainless properties and ultra-high-performance concrete to synergistically prepare high-conductivity / thermal-conductivity ultra-high-performance concrete, and then develops an energy conversion / storage system based on the high-performance concrete with high conversion / storage efficiency, good long-term stability, excellent mechanical properties, and meeting the requirements of small-section / thin-plate component size. It can be directly used to develop bridge panels, road panels, airport road panels, steps and tunnel entrances that melt snow and ice through electric heating, for farms and household floor heating that use electric heating for heating, for bridge panels, road panels and airport road panels that collect thermoelectric energy by themselves; it can also be used as a solar thermal storage module to improve the collection and utilization rate of new energy.

The invention relates to the technical field of semiconductors, and discloses an LED epitaxial wafer for ultra-large current and a preparation method thereof, the LED epitaxial wafer comprises a substrate, and an AlN layer, a buffer layer, a first GaN layer, a second GaN layer, an N-type GaN layer, a stress release layer, a multi-quantum well layer, an electron barrier layer and a P-type GaN layer are sequentially arranged on the substrate; the stress release layer is of a periodic structure, each periodic structure comprises a third GaN layer, an In < x > Ga < 1-x > N layer and an Al < y > Ga < 1-y > N layer which are stacked in sequence, the third GaN layer, the In < x > Ga < 1-x > N layer and the Al < y > Ga < 1-y > N layer are subjected to recrystallization treatment after growth, and the recrystallization treatment is carried out in the atmosphere of N2 and NH3 at the temperature higher than or equal to 800 DEG C. By implementing the LED epitaxial wafer, stress can be released, the growth quality of the multi-quantum well layer is improved, and the luminous efficiency is ensured. Meanwhile, the working voltage of the LED chip under the ultra-large current can be reduced, and the luminance and the reliability are improved.

This invention discloses a compound and its application, belonging to the field of display technology. The chemical structural formula of the compound is shown below: ; wherein, Ar1 and Ar2 are both; or, one of Ar1 and Ar2 is, and the other of Ar1 and Ar2 is a substituted or unsubstituted C6-C12 aryl, substituted or unsubstituted C3-C12 heteroaryl; Ar3 is a halogen, cyano, substituted or unsubstituted C6-C12 aryl, substituted or unsubstituted C3-C12 heteroaryl, substituted or unsubstituted C1-C60 alkyl or alkoxy; A is O, S or Se; L represents a single bond, a substituted or unsubstituted C6-C12 arylene, or a substituted or unsubstituted C3-C12 heteroarylene; Z1 to Z4 are each independently N or CR5. OLED devices prepared based on this compound have lower operating voltage, higher efficiency, and longer cycle life.

The present specification relates to a compound of Chemical Formula 1 and an organic light-emitting device comprising the same. The compound may improve efficiency, low operating voltage, and / or lifespan characteristics of an organic light emitting device. In particular, the compounds described in the present disclosure may be used as materials for light emitting layers. Further, it provides effects of reducing an operating voltage, improving high efficiency, and / or improving a long lifetime compared to an existing organic light-emitting device.

The invention provides an anion exchange membrane electrolyzed water cathode electrode and a preparation method thereof. The anion exchange membrane electrolyzed water cathode electrode comprises a carbon fiber substrate and cathode catalyst slurry cured on the surface of the carbon fiber substrate, and the cathode catalyst slurry comprises the following components in parts by mass: 20 parts of an anion ionomer, 10 parts of a catalyst, 5-9 parts of a 5% binder solution and 250-300 parts of a solvent; wherein a binder in the 5% binder solution is selected from at least one of polytetrafluoroethylene, polyvinylidene fluoride, polyethylene, polyvinyl alcohol and polyvinylpyrrolidone. The high-molecular binder and the anion ionomer are introduced to form a composite network, the binding force between the catalyst layer and the porous transmission layer is improved, the attenuation rate is low, the stability is high, and the problems of stripping and pulverization of the catalyst layer under the working conditions of strong alkalinity and high gas-liquid flow rate can be effectively solved.

This invention discloses a spiro compound and its applications, belonging to the field of display technology. The chemical structural formula of the compound is as follows: ; wherein, Ar1 to Ar4 are each independently one of a substituted or unsubstituted C6-C60 aryl group or a substituted or unsubstituted C3-C30 heteroaryl group; Ar5, Ar6, and R are each independently one of a substituted or unsubstituted C6-C60 aryl group or a substituted or unsubstituted C3-C30 heteroaryl group; at least one of Z1 to Z3 is N, and the rest are CH; L is one of the following groups: , , ; R1 to R 10 Each of these compounds is independently one of hydrogen, halogen, cyano, nitro, C1-C8 alkyl, C1-C12 alkoxy, substituted or unsubstituted C6-C30 aryl, or substituted or unsubstituted C3-C30 heteroaryl. This compound exhibits excellent electron transport properties, which is beneficial for improving the voltage, efficiency, and lifetime of devices.

The invention discloses an organic light-emitting device which comprises a first electrode, a second electrode, an organic layer and a covering layer structure, the organic layer comprises a light-emitting layer, and the light-emitting layer comprises a compound shown in the formula I: # imgabs0 # substituent Ar1 is selected from non-deuterated phenanthryl, partially deuterated phenanthryl or completely deuterated phenanthryl; a substituent group Ar2 is selected from partially deuterated or fully deuterated phenyl and partially deuterated or fully deuterated naphthyl; only one of the substituent group Ar1 and the substituent group Ar2 can generate dihedral angle change of more than 180 degrees relative to anthryl at normal temperature and normal pressure; the covering layer structure comprises a first covering layer and a second covering layer, the refractive index of the first covering layer is lower than that of the second covering layer, and the first covering layer comprises a fluorine-free compound and / or a fluorine-containing compound. The organic light-emitting device provided by the invention has relatively high efficiency and relatively long service life.

The application provides a comparator and a decision feedback equalization circuit. The comparator comprises a first-stage circuit, a second-stage circuit, a first switch circuit and a second switch circuit. The first-stage circuit comprises a first input circuit and a second input circuit. The first switch circuit and the second switch circuit are respectively used for controlling the conduction of the first input circuit and the second input circuit according to a first feedback signal, a second feedback signal and a clock signal. The first input circuit is used for generating a first differential signal according to an input signal and a first reference signal in a sampling stage when conducting. The second input circuit is used for generating a second differential signal according to the input signal and a second reference signal in the sampling stage when conducting. The second-stage circuit is used for amplifying and latching the first differential signal or the second differential signal in a regeneration stage to output a comparison signal. The application can eliminate the influence of inter-symbol interference and reduce the working voltage of the comparator.

The invention discloses a P-channel enhanced gallium nitride transistor structure and a manufacturing method thereof, and relates to the technical field of integrated circuit manufacturing, the transistor structure comprises an epitaxial wafer, a gate dielectric layer, a second channel layer, a gate, a gate side wall, a source and a drain; the manufacturing method comprises the steps of 1, providing an epitaxial wafer, 2, depositing a gate dielectric layer and a gate, 3, oxidizing polycrystalline silicon, and removing a silicon nitride dielectric in a source / drain region, 4, carrying out secondary epitaxial growth of a second channel layer, 5, depositing to form a gate side wall and carrying out back etching, 6, depositing a source / drain metal layer, forming a source and a drain, and 5, carrying out back etching. 7, depositing an intermetallic dielectric layer, and then completing a back-end process; two-dimensional hole gas is formed on two sides of gate metal by using a secondary epitaxial process to serve as gate-source and gate-drain connection regions, and a small-size P-channel enhanced gallium nitride transistor is formed by combining a side wall process and a self-alignment process, so that the working voltage of a device is reduced.

The present invention relates to the technical field of organic electroluminescent materials, and in particular to a silyfluorene derivative as shown in Formula I and an organic electroluminescent element comprising the same. The compound shown in Formula I provided by the present invention improves the thermal stability of the material and the ability to transport carriers. The material of the present invention can be used in an organic electroluminescent element to significantly reduce the driving voltage, improve the luminous efficiency and lifespan.

The invention discloses a radio frequency power supply circuit and electronic equipment. The radio frequency power supply circuit comprises a power supply module, a first inductor, a power tube, a peak value detection module and a control module. The first end of the first inductor is connected with the power module; the first end of the power tube is connected with the second end of the first inductor and coupled with a load, the second end of the power tube is grounded, and the control end of the power tube is configured to input a radio frequency signal; the peak detection module is connected with the first end of the power tube, and the peak detection module is configured to obtain the peak voltage of the first end of the power tube; the control module is connected with the peak value detection module and the power supply module, and the control module is configured to control the power supply module to reduce the output voltage when the peak value voltage is larger than a first voltage threshold value. Through the above mode, the mismatch risk of the power tube can be effectively reduced, and the overvoltage protection of the power tube can be realized.

An organic metal compound represented by the following chemical formula 1 is disclosed. The organic metal compound is used as a dopant for the light-emitting layer of an organic light-emitting diode. Therefore, the operating voltage of the diode is reduced, and the light-emitting efficiency and life are improved: [Chemical Formula 1] Ir(L A ) m (L B ) n In chemical formula 1, L A represents a primary ligand and is one selected from the group consisting of Chemical Formula 2-1, Chemical Formula 2-2, and Chemical Formula 2-3, L B represents the auxiliary ligand represented by Chemical Formula 3, m and n each represent the number of ligands bound to Ir (iridium), m is 1, 2 or 3, n is 0, 1 or 2, and the sum of m and n is 3.

This invention discloses a memory device and its fabrication method, belonging to the field of semiconductor manufacturing technology. By employing a composite functional layer containing group III nitrides and co-doped metals, and directly depositing the film at room temperature using magnetron sputtering, suitable microstructures and defect distributions can be formed within the functional layer during growth. This allows the device to achieve stable resistive state transitions without additional electroforming processing, effectively reducing the device's operating voltage and significantly improving its reliability and state consistency under small-size conditions. The room-temperature magnetron sputtering fabrication method eliminates the need for high-temperature deposition or high-temperature annealing, allowing for strict control of the process temperature to meet the thermal budget requirements of CMOS back-end processes. This enables three-dimensional monolithic integration with logic circuits, simplifying the fabrication process, reducing process complexity, effectively lowering manufacturing costs, and increasing integration density.