26results about How to "Low working voltage" patented technology

This invention relates to the field of semiconductor optoelectronic device technology, specifically to a method and application for reducing the contact resistance of high-Al-content n-AlGaN materials in device manufacturing processes. The method involves surface atom adsorption and annealing of the n-AlGaN layer under a protective gas atmosphere; the atoms are Si and N atoms. This method significantly increases the carrier concentration on the material surface, thereby contributing to excellent ohmic contact performance and reducing the material's contact resistivity. It solves the problem of difficult ohmic contact preparation for high-Al-content n-AlGaN materials, especially the difficulty in forming ohmic contacts after etching. The method is simple and reproducible, effectively avoiding the complexity and instability of existing processes such as acid / alkali corrosion or high-temperature annealing. It ensures large-scale mass production and has no adverse effects on subsequent device fabrication, exhibiting good process compatibility.

This invention discloses an epitaxial wafer for a deep ultraviolet (UV) light-emitting diode (LED) and its fabrication method, relating to the field of semiconductor optoelectronic devices. The UV LED epitaxial wafer includes a substrate and a buffer layer, an N-type AlGaN layer, an active layer, an electron blocking layer, and a P-type AlGaN layer sequentially grown on the substrate. The active layer has a periodic structure, with each period comprising a sequentially stacked quantum well layer and a quantum barrier layer, and the number of periods in the active layer is ≥2. The quantum barrier layer comprises a sequentially stacked AlInGaN layer and a P-AlInGaN layer. Implementing this invention can effectively improve the luminous efficiency of deep ultraviolet LEDs.

The application provides a host material, a double-host-containing organic electroluminescent material and an organic electroluminescent device, the host material has a structure shown in general formula 1, and the host material or the double-host-containing organic electroluminescent material of the application is applied to the organic electroluminescent device, so that the driving voltage of the device can be reduced, the luminous efficiency is improved, and the service life is prolonged.

This invention discloses a compound and its application, belonging to the field of display technology. The chemical structural formula of the compound is shown below: ; wherein, Ar1 and Ar2 are both; or, one of Ar1 and Ar2 is, and the other of Ar1 and Ar2 is a substituted or unsubstituted C6-C12 aryl, substituted or unsubstituted C3-C12 heteroaryl; Ar3 is a halogen, cyano, substituted or unsubstituted C6-C12 aryl, substituted or unsubstituted C3-C12 heteroaryl, substituted or unsubstituted C1-C60 alkyl or alkoxy; A is O, S or Se; L represents a single bond, a substituted or unsubstituted C6-C12 arylene, or a substituted or unsubstituted C3-C12 heteroarylene; Z1 to Z4 are each independently N or CR5. OLED devices prepared based on this compound have lower operating voltage, higher efficiency, and longer cycle life.

The present specification relates to a compound of Chemical Formula 1 and an organic light-emitting device comprising the same. The compound may improve efficiency, low operating voltage, and / or lifespan characteristics of an organic light emitting device. In particular, the compounds described in the present disclosure may be used as materials for light emitting layers. Further, it provides effects of reducing an operating voltage, improving high efficiency, and / or improving a long lifetime compared to an existing organic light-emitting device.

The invention provides an anion exchange membrane electrolyzed water cathode electrode and a preparation method thereof. The anion exchange membrane electrolyzed water cathode electrode comprises a carbon fiber substrate and cathode catalyst slurry cured on the surface of the carbon fiber substrate, and the cathode catalyst slurry comprises the following components in parts by mass: 20 parts of an anion ionomer, 10 parts of a catalyst, 5-9 parts of a 5% binder solution and 250-300 parts of a solvent; wherein a binder in the 5% binder solution is selected from at least one of polytetrafluoroethylene, polyvinylidene fluoride, polyethylene, polyvinyl alcohol and polyvinylpyrrolidone. The high-molecular binder and the anion ionomer are introduced to form a composite network, the binding force between the catalyst layer and the porous transmission layer is improved, the attenuation rate is low, the stability is high, and the problems of stripping and pulverization of the catalyst layer under the working conditions of strong alkalinity and high gas-liquid flow rate can be effectively solved.

This invention discloses a spiro compound and its applications, belonging to the field of display technology. The chemical structural formula of the compound is as follows: ; wherein, Ar1 to Ar4 are each independently one of a substituted or unsubstituted C6-C60 aryl group or a substituted or unsubstituted C3-C30 heteroaryl group; Ar5, Ar6, and R are each independently one of a substituted or unsubstituted C6-C60 aryl group or a substituted or unsubstituted C3-C30 heteroaryl group; at least one of Z1 to Z3 is N, and the rest are CH; L is one of the following groups: , , ; R1 to R 10 Each of these compounds is independently one of hydrogen, halogen, cyano, nitro, C1-C8 alkyl, C1-C12 alkoxy, substituted or unsubstituted C6-C30 aryl, or substituted or unsubstituted C3-C30 heteroaryl. This compound exhibits excellent electron transport properties, which is beneficial for improving the voltage, efficiency, and lifetime of devices.

The application provides a comparator and a decision feedback equalization circuit. The comparator comprises a first-stage circuit, a second-stage circuit, a first switch circuit and a second switch circuit. The first-stage circuit comprises a first input circuit and a second input circuit. The first switch circuit and the second switch circuit are respectively used for controlling the conduction of the first input circuit and the second input circuit according to a first feedback signal, a second feedback signal and a clock signal. The first input circuit is used for generating a first differential signal according to an input signal and a first reference signal in a sampling stage when conducting. The second input circuit is used for generating a second differential signal according to the input signal and a second reference signal in the sampling stage when conducting. The second-stage circuit is used for amplifying and latching the first differential signal or the second differential signal in a regeneration stage to output a comparison signal. The application can eliminate the influence of inter-symbol interference and reduce the working voltage of the comparator.

This invention discloses a memory device and its fabrication method, belonging to the field of semiconductor manufacturing technology. By employing a composite functional layer containing group III nitrides and co-doped metals, and directly depositing the film at room temperature using magnetron sputtering, suitable microstructures and defect distributions can be formed within the functional layer during growth. This allows the device to achieve stable resistive state transitions without additional electroforming processing, effectively reducing the device's operating voltage and significantly improving its reliability and state consistency under small-size conditions. The room-temperature magnetron sputtering fabrication method eliminates the need for high-temperature deposition or high-temperature annealing, allowing for strict control of the process temperature to meet the thermal budget requirements of CMOS back-end processes. This enables three-dimensional monolithic integration with logic circuits, simplifying the fabrication process, reducing process complexity, effectively lowering manufacturing costs, and increasing integration density.

The lifting device comprises at least one continuous anode, the periphery of the continuous anode is sleeved with a clamping frame, a plurality of anode guide rods are arranged between the clamping frame and the continuous anode, and a pressing mechanism enabling the anode guide rods to make contact with the continuous anode is installed on the clamping frame. A lifting mechanism is arranged at the upper end of the clamping frame and comprises a first driver, a second driver and a lifter, a lifter connector connected with the second driver is arranged on the upper portion of an output shaft of the lifter, an anode bus is arranged on the outer side of the anode guide rod, and a soft belt connected with the anode bus and the anode guide rod closest to the anode bus is arranged between the anode bus and the anode guide rod. According to the invention, the synchronism of the continuous anodes is ensured, the accuracy of electrode distance and cell voltage control is improved, the thermal balance of the electrolytic cell is maintained, the energy consumption is reduced, the current efficiency is improved, and the technical problems in controlling the electrode distance and regulating and controlling the distance between an anode guide rod and an aluminum oxide crust are thoroughly solved.

This invention relates to an organic electron transport material containing naphthalene and benzyl nitrile groups and its applications. By introducing benzyl and triazine groups at the 1,4 positions of naphthalene, this invention improves the material's thermal stability and film-forming properties, and increases its electron mobility. The organic electroluminescent compound provided by this invention exhibits high thermal stability and film-forming properties, as well as strong electron mobility. Organic electroluminescent devices fabricated using this compound demonstrate excellent luminous efficiency and longer device lifetime.

The present application relates to an organic compound, and electronic elements and electronic devices using the same. The organic compound has a structure shown in Formula I, and application of the organic compound to an organic electroluminescent device can significantly improve the performance of the device.

The embodiment of the present disclosure relates to the field of semiconductor circuit design, in particular to an amplification circuit and a memory, comprising: a pull-up module, an input end of which is coupled with a first node, one output end of which is coupled with a bit line, and another output end of which is coupled with a complementary bit line; a pull-up control module, an input end of which is used for receiving a first control signal, and an output end of which is coupled with the pull-up module, and the pull-up control module is configured to drive the potential of the bit line or the complementary bit line of the pull-up module based on the first control signal; a pull-down module, an input end of which is coupled with a second node, one output end of which is coupled with the bit line, and another output end of which is coupled with the complementary bit line; and a pull-down control module, an input end of which is used for receiving a second control signal, and an output end of which is coupled with the pull-down module, and the pull-down control module is configured to drive the potential of the bit line or the complementary bit line of the pull-down module based on the second control signal; the embodiment of the present disclosure improves the efficiency of the sensing amplification circuit in amplifying the voltage difference between the bit line and the complementary bit line through a new sensing amplification circuit structure.

The invention provides a light emitting diode and a light emitting device. The light-emitting diode comprises an active layer, and a first semiconductor layer and a second semiconductor layer which are oppositely arranged on two sides of the active layer, wherein the active layer comprises well layers and barrier layers which are periodically and alternately stacked; wherein in at least one period, the barrier layer is provided with a first doping layer and a second doping layer which are sequentially stacked, the second doping layer is closer to the second semiconductor layer than the first doping layer, the first doping layer and the second doping layer are both doped with dopants, and the concentration of the dopants in the first doping layer is smaller than that of the dopants in the second doping layer. According to the light-emitting diode, the built-in electric field of the well layer is effectively weakened while lower working voltage is achieved, and the light-emitting efficiency of the light-emitting diode is improved by enhancing electron hole wave function overlapping.

The invention discloses a benzo pentacyclic compound and application thereof, and belongs to the technical field of display. The chemical structural formula of the compound is shown in the specification, wherein Ar, R1 to R6 are respectively and independently hydrogen, deuterium, halogen, cyano, nitro, alkyl of C1-C18, alkoxy of C1-C12, substituted or unsubstituted aryl of C6-C30 or substituted or unsubstituted heteroaryl of C3-C30, and R1 to R6 are respectively and independently selected from hydrogen, deuterium, halogen, cyano, nitro, alkyl of C1-C18, alkoxy of C1-C12, substituted or unsubstituted aryl of C6-C30 or substituted or unsubstituted heteroaryl of C3-C30; ar1 and Ar2 are respectively and independently a substituted or unsubstituted C6-C30 aryl group or a substituted or unsubstituted C3-C30 heteroaryl group; each of L1 to L3 independently represents a single bond, a substituted or unsubstituted C6-C60 arylene group, or a substituted or unsubstituted C3-C30 heteroarylene group; at least one of Z1 to Z3 is N, and the balance is CH; a is O, S, Se or CR7R8. The compound has excellent electron transmission performance, and is beneficial to improving the voltage, efficiency and service life of a device.

The application provides a double-substituted seven-membered spiro derivative, an electron transport layer containing the same and an organic electroluminescent element, the double-substituted seven-membered spiro derivative has the structure shown in the following formula (I). The double-substituted seven-membered spiro derivative provided in the application takes a rigid structure as a mother nucleus, introduces a substituted or unsubstituted nitrogen-containing heteroaryl group, and further improves the electron transport capacity of the compound. The double-substituted seven-membered spiro derivative can be used as an electron transport material of an organic electroluminescent element, can effectively reduce the working voltage of the organic electroluminescent element, and improves the luminous efficiency.

The application discloses a double dielectric layer field effect transistor and a preparation method thereof. The device comprises a glass substrate, source-drain electrodes, a semiconductor layer, a dielectric layer and a gate electrode. The dielectric layer comprises a low-k dielectric layer in contact with the semiconductor layer and a high-k dielectric layer located on the low-k dielectric layer. The low-k dielectric layer is formed by coating a low-k dielectric layer solution on the semiconductor layer. The low-k dielectric layer solution is prepared by dissolving polystyrene in an organic solvent, and the concentration of the polystyrene is 5-20 mg / mL. The application uses a double dielectric layer structure to improve the device performance, uses a low-k polymer to suppress the energy disorder caused by polarons in the high-k dielectric layer, improves the charge transport in the interface, and effectively reduces the working voltage of the device by using the oxide Al2O3 as the high-k dielectric layer. When the concentration of the low-k polymer is in the range of 10-20 mg / mL, the threshold voltage and the mobility of the device are optimally matched.

The application belongs to the technical field of organic electroluminescence, and relates to a nitrogen-containing compound, an organic electroluminescent device and an electronic device. The nitrogen-containing compound has a structure as shown in formula 1. When the nitrogen-containing compound is used in an organic electroluminescent device, the performance of the organic electroluminescent device can be significantly improved.

This invention relates to a method for fabricating a light-emitting element based on an ultra-smooth interface composite functional transparent conductive layer, comprising the following steps: (1) providing a substrate and performing epitaxial growth; (2) growing a composite functional layer with a thickness of 5-10 nm on the surface of the epitaxial structure; (3) polishing the composite functional layer to ensure that the surface roughness Ra < 0.2 nm; (4) defining the photonic crystal pattern and etching photonic crystal pre-holes in the composite functional layer; (5) depositing the composite transparent conductive layer: firstly, using an atomic layer deposition system (ALD), filling the photonic crystal pre-holes with an ITO material of an indium-tin weight ratio of 90:10, and then growing a second ITO layer with a thickness of 30 nm and an indium-tin weight ratio of 95:5 as a current diffusion layer by sputtering or ion beam deposition, and finally performing high-temperature thermal annealing; this invention optimizes the light extraction efficiency and current diffusion performance of the device by combining fundamental planarization of the substrate interface with the precise fabrication of nanophotonic structures.

This invention relates to the field of semiconductor technology, and provides a green GaN epitaxial wafer and its fabrication method. The epitaxial wafer includes a substrate, and a buffer layer, a first strain control layer, an undoped GaN layer, a second strain control layer, a third strain control layer, a multiple quantum well layer, an electron blocking layer, and a P-type GaN layer sequentially deposited on the substrate. The first strain control layer is a superlattice layer composed of periodically alternating first AlGaN layers and GaN layers; the second strain control layer is a superlattice layer composed of periodically alternating N-type GaN layers and AlN layers; the third strain control layer is a superlattice layer composed of periodically alternating C / Si co-doped AlInGaN layers and InGaN layers; the electron blocking layer includes Si-doped AlGaN layers and AlGaN / Al... x In y Ga 1‑x‑y N-composite superlattice layer, wherein the AlGaN / Al x In y Ga 1‑x‑y The N-composite superlattice layer consists of a second AlGaN layer and Al x In y Ga 1‑x‑y The N-layers are periodically alternating. The green GaN epitaxial wafer and its preparation method provided by this invention can effectively release the stress of the epitaxial layer, improve the crystal quality of the epitaxial layer, and enhance the luminescence efficiency.

The application belongs to the technical field of electrocatalysis, and particularly relates to application of a spinel catalyst in a benzylamine oxidation reaction for preparing nitrile. The catalyst is a spinel type copper-doped cobalt-based oxide CuCo2O4 catalyst supported on a foamed nickel, and the CuCo2O4 forms a nano-sheet array structure. The catalyst is used as a working electrode to perform an electrocatalytic oxidation reaction in an alkaline electrolyte containing benzylamine, and benzyl cyanide is generated. 2+ / Co 3+ / Co 4+ reversible conversion of multiple valence states, so that the high-valence cobalt active species is generated at a lower potential and remains stable, the potential window of the efficient oxidation reaction of benzylamine is widened, and the selectivity and Faraday efficiency of benzyl cyanide generation are improved. Meanwhile, the catalyst is used in the oxidation reaction of benzylamine and coupled with a cathode hydrogen evolution reaction, so that hydrogen is generated while the working voltage of the electrolytic cell is significantly reduced, and excellent energy utilization efficiency and comprehensive electrocatalytic performance are exhibited.

The invention discloses an organic compound, an organic layer, application of the organic layer and an organic electroluminescent device, and relates to the technical field of organic electroluminescent materials.The general formula of the organic compound is shown in the formula (I) or the formula (II), and the molecular structure of the organic compound has a large plane conjugated structure, so that the organic compound has good charge transfer capacity; the molecular structure of the organic compound is very stable, and when the organic compound is applied to the organic electroluminescent device, the efficiency of the device can be improved, the service life of the device can be prolonged, and the working voltage of the device can be reduced.

This application discloses an organic compound and an organic layer, their applications, an organic electroluminescent device, and a display or lighting device, wherein the organic compound has the structural formula shown in Formula I: In Formula I, L1 and L2 are independently selected from substituted or unsubstituted C6-C30 aryl groups and substituted or unsubstituted C3-C30 heteroaryl groups; Ar1, Ar2, and Ar3 are independently selected from substituted or unsubstituted C6-C30 aryl groups and substituted or unsubstituted C3-C30 heteroaryl groups. X is selected from O, S, NR1, CR2R3, and SiR4R5, and R1 to R5 are independently selected from substituted or unsubstituted straight-chain or branched C1 to C30 alkyl groups, substituted or unsubstituted C3 to C30 cycloalkyl groups, substituted or unsubstituted C1 to C30 heteroalkyl groups, substituted or unsubstituted C1 to C30 heterocycloalkyl groups, substituted or unsubstituted C6 to C30 aryl groups, substituted or unsubstituted C3 to C30 heteroaryl groups, or formed into a ring with adjacent atoms. When this organic compound is applied to organic electroluminescent devices, it can significantly improve the current efficiency and lifetime of the device and reduce the operating voltage of the device.

This application provides a display device and its driving method. The display device includes a display panel. The display panel includes a plurality of pixel units. Each pixel unit includes a first sub-pixel and at least one second sub-pixel. The first sub-pixel includes a first driving circuit and a first light-emitting diode. The first driving circuit includes a first pulse amplitude modulation control module, a first transistor, and a second transistor. The second sub-pixel includes a second driving circuit and a second light-emitting diode. The second driving circuit includes a second pulse amplitude modulation control module, a second pulse width modulation control module, a third transistor, and a fourth transistor. The technical solution of this application reduces the number of data signal lines, lowers the complexity of the driving circuit, improves color point stability and brightness uniformity, reduces transient current peaks, and improves the reliability of the display device.

This invention relates to novel materials and organic electroluminescent devices, such as OLEDs (organic light-emitting diodes), comprising these materials, for example, as electron transport materials and / or optionally in combination with another matrix material. The invention also relates to mixtures and formulations containing these novel materials.