2081results about How to "Low working voltage" patented technology

A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage.

An electroluminescent device comprised of an anode, a hole transporting layer, a light emitting layer, and a cathode, wherein said light emitting layer contains a component of the formula wherein Ar1, Ar2, Ar3, and Ar4 are each independently aryl or optionally aliphatic; R1 and R2 are independently selected from the group consisting of hydrogen, aliphatic, halogen, and cyano; L is a suitable linking group; and n is a number of from 0 to about 3.

This invention relates to liquid crystal (LC) displays comprising cells of well-defined shape, size and aspect ratio which cells are filled with a liquid crystal composition preferably containing dichroic dye(s), and novel processes for their manufacture.

A high performance GAA FET is described in which vertically stacked silicon nanowires carry substantially the same drive current as the fin in a conventional FinFET transistor, but at a lower operating voltage, and with greater reliability. One problem that occurs in existing nanowire GAA FETs is that, when a metal is used to form the wrap-around gate, a short circuit can develop between the source and drain regions and the metal gate portion that underlies the channel. The vertically stacked nanowire device described herein, however, avoids such short circuits by forming insulating barriers in contact with the source and drain regions, prior to forming the gate. Through the use of sacrificial films, the fabrication process is almost fully self-aligned, such that only one lithography mask layer is needed, which significantly reduces manufacturing costs.

It is an object to provide a semiconductor device in which power consumption can be reduced. It is another object to provide a highly reliable semiconductor device using a programming cell, such as a programmable logic device (PLD). In accordance with a change in a configuration of connections between basic blocks, power supply voltage furnishing to the basic blocks is changed. That is, when the structure of connections between the basic blocks is such that a basic block does not contribute to a circuit, the supply of the power supply voltage to this basic block is stopped. Further, the supply of the power supply voltage to the basic blocks is controlled using a programming cell formed using a field effect transistor whose channel formation region is formed using an oxide semiconductor, the field effect transistor having extremely low off-state current or extremely low leakage current.

An electroluminescent device containing an anode, an organic electroluminescent element, and a cathode wherein the electroluminescent element contains, for example, a fluorescent hydrocarbon component of Formula (I) wherein R1 and R2 are substituents, which are selected from the group consisting of hydrogen, an alkyl, an alicyclic alkyl, an alkoxy, a halogen, and a cyano; Ar1 and Ar2 are each independently an aromatic component or an aryl group comprised of a from about 4 to about 15 conjugate-bonded or fused benzene rings.

A high data availability write-caching storage controller has a volatile memory with a write cache for caching write cache data, a non-volatile memory, a capacitor pack for supplying power for backing up the write cache to the non-volatile memory in response to a loss of main power, and a CPU that determines whether reducing an operating voltage of the capacitor pack to a new value would cause the capacitor pack to be storing less energy than required for backing up the current size write cache to the non-volatile memory. If so, the CPU reduces the size of the write cache prior to reducing the operating voltage. The CPU estimates the capacity of the capacitor pack to store the required energy based on a history of operational temperature and voltage readings of the capacitor pack, such as on an accumulated normalized running time and warranted lifetime of the capacitor pack.

A method of forming a composite gate structure for a planar MOSFET device, as well as for vertical, double gate, FINFET device, has been developed. The method features a composite gate structure comprised of an overlying silicon gate structure shape, and an underlying titanium nitride gate structure shape. The titanium nitride component allows a lower work function, and thus lower device operating voltages to be realized when compared to counterpart gate structures formed with only polysilicon. A novel, two step gate structure definition procedure, featuring an anisotropic first etch procedure for definition of the polysilicon gate structure shape, followed by a wet or dry isotopic second etch procedure for definition of the titanium nitride gate structure shape, is employed.

A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a <0001> direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.

An OLED device including a cathode, an anode, one or more light-emitting layers disposed between the anode and cathode to produce white light and a layer disposed between the light-emitting layer(s) and the cathode. The layer includes a polycyclic aromatic hydrocarbon compound that has the lowest LUMO value of the compounds in the layer, in an amount greater than or equal to 10% by volume and less than 100% by volume of the layer; at least one second compound exhibiting a higher LUMO value than the polycyclic aromatic hydrocarbon compound, where at least one of the second compounds is a low voltage electron-transporting material, and the total amount of such second compounds(s) is less than or equal to 90% by volume of the layer; and a metallic material based on a metal having a work function less than 4.2 eV.

A spatial light modulator has: a support substrate that has an electrode layer; and a movable thin film that has at least an electrode layer, and that is opposingly placed above the support substrate with being separated by a predetermined gap distance in a manner that the movable thin film is flexurally deformable toward the support substrate, and in which a predetermined driving voltage is applied between the electrode layer of the support substrate and the electrode layer of the movable thin film to cause the movable thin film to be deflected toward the support substrate by an electrostatic force acting between the electrode layers. A returning electrode is disposed on an side of the movable thin film opposite to the side which is opposed to the support substrate to apply an electrostatic force of attracting the movable thin film when a driving voltage is applied.

A sonic actuator including a multi-layer membrane having a non-metallic elastomeric dielectric polymer layer with a first surface and a second surface, a first compliant electrode layer contacting the first surface of the polymer layer, and a second compliant electrode layer contacting the second surface of the polymer layer. The actuator further includes a support structure in contact with the sonic actuator film. Preferably, the non-metallic dielectric polymer is selected from the group consisting essentially of silicone, fluorosilicone, fluoroelastomer, natural rubber, polybutadiene, nitrile rubber, isoprene, and ethylene propylene diene. Also preferably, the compliant electrode layer is made from the group consisting essentially of graphite, carbon, and conductive polymers. The support structure can take the form of grid having a number of circular apertures. When a voltage is applied to the electrodes, portions of the film held at the aperture of the support structure can bulge due to the electrostriction phenomenon. The resultant “bubbles” can be modulated to generate sonic vibrations, or can be used to create a variable surface for airflow control.

Efficiency of leading out light released from an active layer, i.e. the external quantum efficiency, can be improved remarkably by processing a light lead-out surface to have an embossment. A layer containing a p-type dopant like magnesium (Mg) is deposited near the surface of a p-type GaN layer to diffuse it there, and a p-side electrode is made on the p-type GaN layer after removing the deposited layer. This results in ensuring ohmic contact with the p-side electrode, preventing exfoliation of the electrode and improving the reliability.

A method of forming a non-volatile memory device may include forming a fin protruding from a substrate, forming a tunnel insulating layer on portions of the fin, and forming a floating gate on the tunnel insulting layer so that the tunnel insulating layer is between the floating gate and the fin. A dielectric layer may be formed on the floating gate so that the floating gate is between the dielectric layer and the fin, and a control gate electrode may be formed on the dielectric layer so that the dielectric layer is between the control gate and the fin. Related devices are also discussed.

An electroluminescent (EL) is provided comprising an anode, an organic electroluminescent element, and a cathode wherein the electroluminescent element contains, for example, a fluorescent 1,1′-binaphthyl derivative component of Formula (I)

wherein R₁, R₂, R₃ and R₄ are individual substituents or a group of substituents, each of which may be selected from the group consisting of hydrogen, or alkyl of from 1 to about 25 carbon atoms; an alicyclic alkyl of from 3 to 15 carbon atoms; an aryl or substituted aryl with about 6 to about 30 carbon atoms; carbon atoms from 4 to 24 necessary to complete a fused aromatic ring of naphthalene, anthracene, perylene and the like; an alicyclic alkyl group with from about 3 to about 15 carbon atoms; a silicon atom which can be substituted with a trimethyl, diphenylmethyl, triphenyl group and the like; heteroaryl or substituted heteroaryl of from 5 to 24 carbon atoms, carbon atoms necessary to complete a fused heteroaromatic ring of furyl, thienyl, pyridyl, quinolinyl and other heterocyclic systems; an alkoxy, amino, alkyl amino or aryl amino of from 1 to about 25 carbon atoms; a halogen, a cyano group, and the like.

A semiconductor memory device comprises writing means for performing a first writing action for shifting an electric resistance of a variable resistance element from a first state to a second state by applying a first voltage between both ends of a memory cell and a gate potential to a gate of a cell access transistor, and a second writing action for shifting the electric resistance from the second state to the first state by applying a second voltage having a polarity opposite to that of the first voltage between both ends of the memory cell and a gate potential to the gate of the cell access transistor, and the polarity and absolute value of the voltage to be applied to both ends of the variable resistance element in the memory cell to be written in the first writing action is different from those in the second writing action.

A frequency-voltage mechanism for power management including first and second PLLs, select logic, control logic, and voltage control logic. The first PLL generates a first source clock signal at a first frequency based on a bus clock signal. The second PLL generates a second source clock signal at a second frequency based on a first frequency control signal and the bus clock signal. The select logic selects between the first and second source clock signals to provide a core clock signal based on a select signal. The clock control logic detects power conditions via at least one power sense signal, provides the first frequency control signal according to power conditions, and provides the select signal. The voltage control logic adjusts the operating voltage commensurate with frequency of the core clock signal. Power consumption is dynamically adjusted without undue delay while providing significant power efficiency benefits.

An oral cavity cleaning tool for the purpose of sterilization of the inside of oral cavity is provided that carries out efficient sterilization by using effective chlorine that is obtained through electrolysis. The oral cavity cleaning tool comprises a block handle, a head section extending from the block handle, a pair of electrodes provided on the head section and a power source that supplies electric current to the pair of electrodes, wherein the electrodes are put into contact with an oral fluid that contains chloride ions thereby to cause electric current to flow between the electrodes, so that the chloride ions are transformed into effective chlorine.