The present invention relates to the technical field of
silicon-based OLEDs. Disclosed are a
mask manufacturing method and a
mask. The
mask manufacturing method comprises: providing a
silicon-based substrate; forming a
metal seed layer on the surface of the
silicon-based substrate; forming a first
photoresist layer on the surface of the
metal seed layer; forming, on the surface of the first
photoresist layer, a plurality of first windows exposing part of the
metal seed layer; forming, on the surface of the metal seed layer facing the first windows, a
mask layer filling the first windows by an
electroforming process; and removing the first
photoresist layer, the silicon-based substrate, and the metal seed layer to obtain a mask. In the present invention, the mask is manufactured by combining a
photolithography process and the
electroforming process, wherein the opening width of the mask depends on the precisions of
exposure, development and photoresist removal during the
photolithography process. Compared with the existing
calendering and
etching processes, the manufacturing method provided by the present application can reduce the minimum opening dimension of the mask, such that the mask can be applied to manufacturing of silicon-based
OLED display devices with higher PPI.