74 results about "Silver mirror" patented technology

The invention relates to the technical field of thermal management material preparation, solves the technical problems of loose heat conduction network structure and non-uniform heat conduction direction of a flexible composite phase change material, and particularly relates to a magnetic polymer-based flexible composite phase change material and a preparation method thereof. Comprising the following steps: preparing a modified polydimethylsiloxane prepolymer from a carbon nanotube dispersion liquid and a polydimethylsiloxane prepolymer; adopting a Pickering emulsion method to mix 42 # paraffin, the modified polydimethylsiloxane prepolymer and nano cellulose to prepare a composite phase change material emulsion; silver mirror reaction is adopted to carry out surface silver plating on the magnetic neodymium iron boron particles; the magnetic polymer-based flexible composite phase change material is prepared from the composite phase change material emulsion and the surface-silvered magnetic neodymium iron boron particles. The high flexibility and magnetism of the prepared material in a normal temperature state endow the material with a more convenient installation mode and lower contact thermal resistance, the heat conduction network structure and component compatibility of the material are improved, and the application requirements of a phase change thermal management technology can be met.

The invention discloses an inverted silver mirror light-emitting diode chip and a preparation method thereof, and relates to the technical field of semiconductors. The inverted silver mirror light-emitting diode chip comprises a substrate, an epitaxial layer, a current expansion layer, a Bragg reflection layer, a metal reflection layer, a first insulating layer, a P-type metal conductive layer and an N-type metal conductive layer, the epitaxial layer comprises an N-type semiconductor layer, an active light-emitting layer and a P-type semiconductor layer; the Bragg reflection layer is provided with a Bragg reflection layer P-type through hole, the first insulating layer is provided with a first insulating layer P-type through hole, and the included angle beta between the hole wall of the first insulating layer P-type through hole and the horizontal plane is smaller than the included angle alpha between the hole wall of the Bragg reflection layer P-type through hole and the horizontal plane; the distance L between the projection edge of the P-type through hole of the first insulating layer and the projection edge of the P-type through hole of the Bragg reflection layer is 5 [mu] m-12 [mu] m. According to the invention, the structure of the flip silver mirror light-emitting diode chip is improved, so that the capability of the flip silver mirror light-emitting diode chip for resisting large current can be improved.

The invention belongs to the technical field of super-hydrophobic material underwater stability evaluation, and particularly relates to a super-hydrophobic material liquid-gas interface stability testing device and a super-hydrophobic material liquid-gas interface stability testing method. Laser is irradiated to the surface of a super-hydrophobic material by utilizing the underwater silver mirror phenomenon of the super-hydrophobic material; the stability condition of an underwater gas film of the super-hydrophobic material is explored by measuring the illumination of reflected light, the stability of the super-hydrophobic material under the hydrostatic pressure is quantitatively represented, the relation between microstructure parameters of the super-hydrophobic material and hydrostatic pressure resistance is explored, and accurate evaluation of the liquid-gas interface stability of the super-hydrophobic material under the hydrostatic pressure is achieved. A theoretical basis is provided for designing an underwater high-stability super-hydrophobic material; the device is simple in structure, the method is convenient to operate, the design is rigorous and reliable, the application range is wide, the stability of the gas layer on the surface of the super-hydrophobic material can be quantitatively represented only by measuring the reflected illuminance of a liquid-gas interface, and the error of a test result is small.

The application discloses a kind of high heat-conducting high endurance low-temperature phase change microcapsule preparation methods, comprising: step 1: using C7, C9 alkane preparation cryogenic phase change material emulsion;Step 2: using melamine resin prepolymer containing polyethylene glycol and hydrophobic silicon carbide powder containing nano silicon carbide preparation modified wall material prepolymer;Step 3: using cryogenic phase change material emulsion and modified wall material prepolymer preparation phase change microcapsule;Step 4: using silver mirror reaction to phase change microcapsule surface silver plating, obtain surface silver plating microcapsule.The low-temperature phase change microcapsule prepared, using C7, C9 low-temperature mixed alkane as microcapsule core material;Using melamine resin as microcapsule wall material, and wall material contains polyethylene glycol modified material, nano silicon carbide modified material to improve the toughness of microcapsule, thermal conductivity;Microcapsule surface silver plating to resist volatility, eliminate residual formaldehyde in wall material.The application solves the problem of low thermal conductivity and poor durability of cryogenic phase change material microcapsule.

The invention relates to the technical field of semiconductor devices, in particular to a preparation method of a flip silver mirror light-emitting diode chip and the flip silver mirror light-emitting diode chip. According to the preparation method, a preparation process of a P-type first insulating layer through hole and an N-type first insulating layer through hole is improved, a partial exposure region is arranged on a photoetching plate, partial photoresist of a P-type region opening is reserved, an insulating layer can still be reserved above the P-type region opening after etching, Cl ion corrosion is avoided, and the performance of the device is improved. And the P-type first insulating layer through hole and the N-type first insulating layer through hole can be prepared together, batch preparation is not needed, thick precious metal does not need to be prepared on the top layer of the metal reflecting layer to serve as a protective layer, and the preparation cost of the light emitting diode chip is greatly reduced.

The invention discloses a method for manufacturing a roller female die, which comprises the following steps of: providing a front roller which comprises a cylinder and a photoresist layer formed on the outer surface of the cylinder; a sputtering type nickel layer is formed on the photoresist layer towards the front roller, and the sputtering type nickel layer covers the photoresist layer and is in a circular tube shape; forming an electroplated nickel layer on the sputtering type nickel layer formed on the front roller through electroplating, wherein the electroplated nickel layer is fully distributed on the sputtering type nickel layer in a gapless manner so as to form a roller female die together with the sputtering type nickel layer; and separating the roller female die from the front roller. Therefore, according to the manufacturing method of the roller female die, a silver plating layer formed through a silver mirror reaction in the prior art is omitted through the sputtering type nickel layer formed in the nickel sputtering step, and then related problems derived from the silver plating layer are effectively avoided.

The present invention provides a flip-chip silver mirror light-emitting diode chip and a preparation method thereof. The preparation method comprises S10, providing an epitaxial wafer; S20, preparing a Bragg reflector layer; S30, coating a first photoresist on the surface of the Bragg reflector layer, and then removing a portion of the first photoresist on the Bragg reflector layer; S40, etching a Bragg reflector through hole using an inductively coupled plasma etching process; and S50, removing residues in the Bragg reflector through hole using an inductively coupled plasma etching process. The specific steps of step S40 include: S401, performing main reaction etching to form the Bragg reflector through hole; the specific steps of step S50 include: S501, cleaning byproducts generated after the main reaction etching; S502, performing oxygen ion etching to remove the first photoresist layer with fluorine ions remaining after the main reaction etching process; S503, performing argon ion etching to remove fluorine ions remaining on the sidewalls of the Bragg reflector through hole; and S504, removing residues in the Bragg reflector through hole.

The invention provides a light-emitting diode and a manufacturing method of the light-emitting diode, and belongs to the field of light-emitting devices. The light-emitting diode comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence, wherein the second semiconductor layer and the active layer are provided with grooves extending to the first semiconductor layer; the transparent conductive layer is located on the second semiconductor layer, the transparent conductive layer is provided with a first through hole corresponding to the groove and an annular second through hole surrounding the first through hole, and the projection of the groove on the bottom surface of the first semiconductor layer is located in the projection of the first through hole on the bottom surface of the first semiconductor layer; the silver mirror structure is located on the transparent conductive layer, the silver mirror structure is provided with a third through hole corresponding to the groove, and the projection of the third through hole on the bottom surface of the first semiconductor layer is located between the projection of the first through hole and the projection of the second through hole on the bottom surface of the first semiconductor layer; and the insulating layer is located in the second through hole, and the insulating layer is located between the second semiconductor layer and the silver mirror structure.

The utility model relates to the technical field of silver mirror production, and discloses a drying device for silver mirror production, which comprises a drying box and a plurality of heat dissipation grooves, a motor is fixed at the top of the drying box, a rotating shaft is fixed at the output shaft end of the motor, a placing plate I and a placing plate II are respectively fixed on the side wall of the rotating shaft, and two limiting grooves are respectively arranged on the placing plate I and the placing plate II. A plurality of through holes are formed in the limiting rods, the two ends of the limiting rods are sleeved with reset springs, limiting plates slide on the limiting rods, through grooves are formed in the first placement plate, a bearing plate is fixed to the side wall of the drying box, an air heater is fixed to the top of the bearing plate, and the air blowing end of the air heater communicates with an air blowing pipe; the other end of the air blowing pipe is communicated with a collecting pipe which is communicated with an air blowing opening. According to the utility model, the silver mirror is clamped through the cooperation of the limiting rod, the reset spring and the limiting plate, and the silver mirror is prevented from deviating due to the influence of wind power, so that the possibility that the silver mirror falls off is reduced, and the practicability of the device is improved.

This disclosure discloses a light-emitting diode (LED) chip and its fabrication method, belonging to the field of semiconductor technology. The LED chip includes an epitaxial layer and a silver mirror layer. The epitaxial layer comprises a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially. The first semiconductor layer has a first conductivity type, and the second semiconductor layer has a second conductivity type, which is different from the first conductivity type. The epitaxial layer has mesa trenches extending from the second semiconductor layer to the first semiconductor layer. The silver mirror layer covers the second semiconductor layer, the sidewalls of the mesa trenches, and the first semiconductor layer. The embodiments of this disclosure ensure that the silver mirror layer enhances the brightness of the LED chip.

The present invention relates to the technical field of lighting equipment, and particularly relates to a diffuse reflection installation structure for indoor lighting, which includes an installation frame, a finished silver mirror, a plurality of installation hooks, a plurality of elastic buckles, a plurality of limiting plates, a diffuse reflection coating metal lamp slot, a light strip and a diffuse reflection light-transmitting lens. The installation frame is in a frame shape, and a plurality of installation hooks are fixed on the back side and are used to cooperate with the limiting plates to place the diffuse reflection coating metal lamp slot. The diffuse reflection coating metal lamp slot is in a U shape, and a light strip is fixedly placed inside it. The diffuse reflection light-transmitting lens is arranged at the U-shaped opening and can be flexibly removed. The elastic buckles are used to limit the diffuse reflection coating metal lamp slot to prevent it from falling. The present invention installs and places the diffuse reflection coating metal lamp slot through the installation hooks. When the light strip is damaged, it can be taken out and replaced, without the need for full replacement, saving costs, thus solving the problem that the existing installation structure requires full replacement when the light strip is damaged, resulting in material waste and increased costs.

The utility model discloses a novel dial plate capable of realizing micron-sized grains, which comprises a base plate and a texture sheet attached to the upper surface of the base plate, a glue layer is arranged between the base plate and the texture sheet, the texture sheet comprises a silver mirror base layer and an electroformed texture layer, and the electroformed texture layer is arranged on the upper surface of the silver mirror base layer. The utility model provides the novel dial plate capable of realizing micron-sized grains, and the surface of the dial plate can show micron-sized fine grains which cannot be generated through a stamping process and a chemical etching process, so that the dial plate is more fine and exquisite.

The application belongs to the technical field of electronic materials, and particularly relates to a high-conductivity silver / graphene composite solute and a preparation method thereof. The method comprises the following steps: acidizing graphene to obtain an acidized graphene dispersion liquid; mixing the acidized graphene dispersion liquid with a formaldehyde solution to perform an aldehyde reaction, and obtaining an aldehyde graphene dispersion liquid; mixing the aldehyde graphene dispersion liquid with a silver-ammonia solution to perform a silver mirror reaction, and obtaining a silver / graphene composite solute. The graphene is subjected to acidization and aldehyde treatment, and then is subjected to a silver mirror reaction with a silver-ammonia solution to form a silver / graphene composite solute. A small amount of the prepared silver / graphene composite solute is added to commercial silver paste, which not only optimizes the conductive path of the silver paste, but also effectively reduces the porosity problem in the sintering process, thereby significantly enhancing the electron transmission performance, greatly improving the conductivity of the silver paste, and finally promoting the solar cell to achieve higher photoelectric conversion efficiency.

The utility model relates to the technical field of furniture design, and discloses a tea table which comprises a table top part and a supporting part, the supporting part is used for supporting the table top part, and the table top part comprises a bottom plate, a mercury mirror arranged above the bottom plate and an inner frame arranged on the periphery of the mercury mirror. The mercury mirror is arranged on the inner frame, the one-way photoscope is arranged above the inner frame, the mirror surface of the mercury mirror faces upwards, the reflecting surface of the one-way photoscope faces downwards, and the tea table can improve the visual crowding feeling caused by the fact that the tea table occupies a large space.

The present invention relates to silver precursor inks by which a silver mirror having excellent conductivity and reflection properties after firing may be easily formed, and which have high stability. The present invention provides silver precursor inks comprising: a carboxylic acid silver precursor compound; an acetylene-based compound; a nitrogen atom-containing compound; and a solvent.

The present invention discloses an electrochemical microsensor, comprising: a device substrate; a bottom layer of polyimide formed on the device substrate; a top layer of polyimide formed on the top surface of the bottom layer of polyimide and designed to match the pattern of a working electrode lead, a reference electrode and its lead, and a counter electrode and its lead; a silver mirror film formed on the top surface of the top layer of polyimide, respectively constituting the working electrode lead, the reference electrode and its lead, and the counter electrode and its lead; and a working electrode, which is nitrogen-oxygen co-doped laser-induced graphene formed on the bottom layer of polyimide and conductively connected to the working electrode lead. A method for preparing an electrochemical microsensor and its application for detecting nitrous acid are disclosed. The present invention has the beneficial effects of good conductivity, low detection limit, stable performance, high reusability, and a wide range of applications.

Provided are a laminate having a metal tone and colorfulness, a decorative device, a millimeter wave radar device, and a sensor device.　The laminate includes a colored clear coat layer, a base material, and a silver mirror layer in this order.

This invention relates to the field of screen printing ink technology, specifically to an IMD injection molded mirror metallic screen printing ink and its preparation method. The ink is a two-component system: Component A contains a resin liquid composed of polyvinyl butyral, nitrocellulose, modified polyester resin, and polyarylate resin, flake aluminum silver powder, and additives; Component B is a phthalic diisocyanate polymer. Ethylene glycol monobutyl ether is the main solvent, ketones / esters / aromatic hydrocarbons are prohibited, and it has no corrosive effect on polycarbonate. The mass ratio of aluminum silver powder to resin solids is controlled at 0.6:1-1.2:1. The process involves preparing the resin liquid and dispersing the aluminum silver powder and additives, followed by degassing and filtration to obtain component A; before use, component B is pre-diluted with ethylene glycol monobutyl ether, added dropwise at a low shear rate of A:B = 100:8-12, and cured. The resulting ink exhibits high mirror gloss and clarity, high-temperature adhesion resistance, and MEK wiping resistance. Under IMD injection molding conditions, it demonstrates excellent consistency in appearance and structure, making it suitable for bright silver mirror-like decoration.

The invention discloses a mirror surface antifogging material, which is prepared from the following raw materials: a perfluoro solvent, perfluoropolyether and an adhesion auxiliary agent, and the adhesion auxiliary agent is polymethyl methacrylate and / or poly (hydroxyethyl methacrylate). The mirror surface anti-fog material is suitable for visual reflectors such as glass mirror surfaces, silver mirrors and aluminum mirrors, a transparent nano hydrophobic film can be formed on the mirror surfaces through simple spraying at normal temperature, the light transmittance of the formed film layer is high, and the mirror surface anti-fog material has the advantages of clear vision, long anti-fog time, fast film forming, no peculiar smell, simple operation and the like, and is suitable for popularization and application. The anti-fog mirror can be applied to articles such as bathroom mirrors, cosmetic mirrors, glasses and the like in daily life.

The utility model provides a novel cabinet with a multi-layer mirror effect, which relates to the technical field of cabinets and comprises a bottom plate, and side plates are fixedly connected to the top of the bottom plate and close to two sides. According to the utility model, when the door is closed, the coated glass door can press the tip of the lamp wire switch control column into the top plate, the first control point is electrified, the second control point is powered off, the outer lamp strip is lightened and the inner lamp strip is not lightened in the cabinet, so that the coated glass partition plate can be used as a mirror, and the mirror can be transparent when being seen from the outside of the coated glass door to the inside; when the door is opened, the lamp wire switch control column branch tip can be popped up, the first control point is powered off, the second control point is powered on, at the moment, the inner lamp strip close to the outer lamp strip in the cabinet is not lightened, and at the moment, the inner lamp strip is lightened through the silver mirror on the inner side wall of the back plate of the cabinet body, so that the mirror surface effect is reflected to the mirror surface of the coated glass partition plate, and the multi-layer mirror effect is formed. The coated glass partition plate is transparent from outside to inside, and a mirror surface effect on the inner surface of the coated glass partition plate is reflected to the mirror surface of the back plate to form a multi-layer mirror effect.

The application discloses a flip silver mirror light emitting diode chip and a preparation method thereof, and relates to the technical field of semiconductors. According to the application, a first annular groove is formed on a Bragg reflection layer, and a region surrounded by the first annular groove forms a first protruding part. When a P-type first insulating layer via hole is prepared subsequently, the thickness of photoresist of an edge region of the P-type first insulating layer via hole can be improved in a targeted manner, so that the etching resistance of the photoresist of the edge of the P-type first insulating layer via hole is improved. In the process of ICP etching for preparing the P-type first insulating layer via hole, the defects of sawtooth deformation and optical heterochromia of the edge region of the P-type first insulating layer via hole can be effectively improved, so that the AOI detection yield of the flip silver mirror light emitting diode chip is significantly improved.

Provided is a laminate comprising a clearcoat layer, a base material, and a silver mirror layer in this order. Y (reflectance) in an XYZ color system (Yxy color system), when measured from a surface side where the clearcoat layer is provided, is 40% or more.

The invention relates to a high-precision silver electrode micron-sized patterning method, which mainly comprises the following steps of: preparing a hydrophobic molecular film on the surface of a pretreated substrate by a molecular vapor deposition method, patterning the molecular film by ultraviolet ozone photoetching, and precisely depositing a silver electrode in a pattern area by utilizing a silver mirror reaction. Therefore, the silver electrode with simplified and environment-friendly process, low equipment cost, high processing efficiency, excellent precision and strong material adaptability is prepared.

The present application relates to the field of LED, specifically relates to a kind of method for improving flip LED chip brightness, comprising the following steps: step 2: the first silicon dioxide layer is divided into reserved part and etching part;Photoresist is covered in reserved part;The structure of the obtained sapphire substrate, epitaxial layer, first silicon dioxide layer and photoresist is Wafer2;Step 3: using BOE etching Wafer2, obtains Wafer3;Silver mirror reflection layer is sputtered on the surface of Wafer3;Step 5: stripping photoresist.The beneficial effects of the present application are that: while etching the first silicon dioxide layer, the photoetching topography of silver mirror reflection layer is formed, and sputtering silver mirror radiation layer on the above photoetching topography can make the subsequent reserved silver mirror reflection layer edge adhere to the reserved part.Also, the step of photoetching silver mirror reflection layer is reduced.

An ornament includes a base material; and a silver particle layer containing silver particles and disposed on the base material, wherein the silver particle layer has surface resistivity of 104Ω / □ or more, and the silver particles are stacked in the silver particle layer in a thickness direction of the silver particle layer.

The utility model provides a float glass copper-silver mirror surface treatment polishing device, and relates to the technical field of glass copper-silver mirror production, the float glass copper-silver mirror surface treatment polishing device comprises a waste scrap collecting box, and a dust collecting pipeline is fixedly mounted on the inner wall of one side of the waste scrap collecting box; a float glass copper-silver mirror is placed on a suction cup above a float glass copper-silver mirror placing plate, and a second air pump and a connecting pipeline are controlled to adsorb air between the suction cup and the float glass copper-silver mirror, so that the float glass copper-silver mirror can be attached and fixed above the suction cup; after fixing is completed, a float glass copper-silver mirror containing plate can be placed on the top of a conveying belt, an electric telescopic rod is controlled to drive a connecting frame and a closed machining box to descend, the closed machining box slides into the inner side of a sealing groove above the float glass copper-silver mirror containing plate, and the closed machining box and the float glass copper-silver mirror containing plate can be in a closed state.

The present invention is applicable to the field of terahertz measurement technology, and provides a terahertz measurement method for the thickness of a ceramic layer based on adaptive transfer learning, comprising the following steps: constructing an analytical model considering the terahertz signal of a material color thermal barrier coating, measuring the reflection signal of a silver mirror by using a terahertz time-domain spectroscopy system, inputting the reflection signal as a reference signal into the analytical model to establish a source domain data set; measuring the terahertz experimental signal at the corresponding position by using a terahertz time-domain spectroscopy system, carrying out a metallographic experiment to extract the accurate thickness value of a sample, and constructing a target domain data set; establishing a source domain convolutional neural network and a target domain convolutional neural network to form a transfer learning framework, and realizing the measurement of the thickness of the ceramic layer of the thermal barrier coating. By exploring the propagation mechanism of terahertz waves in the thermal barrier coating, the present invention constructs a terahertz signal analytical model to generate a source domain data set, replaces part of the experimental signals to complete the training of the convolutional neural network, avoids manufacturing a large number of layer samples, and reduces the training cost.

Provided are a laminate capable of reducing a transmission attenuation amount of millimeter waves, and a decoration device, a millimeter wave radar device, and a sensor device including the laminate.SOLUTION: A laminate includes a clear coat layer, a base material, and a silver mirror layer in this order, and the clear coat layer contains particles.SELECTED DRAWING: None

The invention discloses a tissue hexamine silver staining method, and relates to the technical field of staining of animal tissue slices. The method comprises the following steps: taking a washed to-be-dyed tissue section, dropwise adding a periodate solution for treatment, soaking and washing; putting the tissue slice into a silver hexamine developing solution until the tissue slice is just immersed in the silver hexamine developing solution; heating and incubating; washing the developed tissue slice with water, and carrying out silver fixation treatment by using a sodium thiosulfate solution; and washing, dehydrating, dyeing, re-dehydrating, transparentizing with xylene, sealing and airing the tissue slice subjected to silver fixation treatment to finish dyeing. The invention provides a tissue hexamine silver staining method which solves the problem that a staining section is easy to dirty due to a silver mirror reaction in a traditional method. The developing time is short, the positive contrast after developing is strong, and the result is clear.

The utility model relates to the technical field of semiconductor crystal ingot processing, in particular to efficient detection equipment for a small surface area of a crystal ingot. The utility model aims to provide the high-efficiency detection equipment for the small surface area of the crystal ingot, the equipment shapes a laser beam into rectangular laser to be output, surface laser scanning is used for replacing point laser scanning, and a single scanning area is expanded, so that the scanning efficiency is improved, the end surface information omission of the crystal ingot is avoided, and the detection accuracy is improved. The efficiency and the resolution ratio of crystal ingot end face detection are higher; meanwhile, the light intensity distribution of the rectangular laser is obtained by adopting the silver reflector, and then the light intensity distribution of the reflected light of the crystal ingot is corrected, so that the influence of non-uniform light intensity of the rectangular laser on the light intensity distribution of the reflected light of the crystal ingot is avoided, and the measurement precision is improved.