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6 results about "Silver mirror" patented technology

Light Emitting Diode Chips and Their Fabrication Methods

PendingCN122094265AGuaranteed brightness improvement effectachieve full coverageActive layerLight-emitting diode
This disclosure discloses a light-emitting diode (LED) chip and its fabrication method, belonging to the field of semiconductor technology. The LED chip includes an epitaxial layer and a silver mirror layer. The epitaxial layer comprises a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially. The first semiconductor layer has a first conductivity type, and the second semiconductor layer has a second conductivity type, which is different from the first conductivity type. The epitaxial layer has mesa trenches extending from the second semiconductor layer to the first semiconductor layer. The silver mirror layer covers the second semiconductor layer, the sidewalls of the mesa trenches, and the first semiconductor layer. The embodiments of this disclosure ensure that the silver mirror layer enhances the brightness of the LED chip.
Owner:HC SEMITEK ZHEJIANG CO LTD

Silver precursor inks

PCT designated stageWO2026155533A1Carboxylic acidAcetylene
The present invention relates to silver precursor inks by which a silver mirror having excellent conductivity and reflection properties after firing may be easily formed, and which have high stability. The present invention provides silver precursor inks comprising: a carboxylic acid silver precursor compound; an acetylene-based compound; a nitrogen atom-containing compound; and a solvent.
Owner:PESOLVE CO LTD

Improved method for making hollow laser fiber for mid-infrared lasers

PendingCN122151276AOptical fibre with multilayer core/claddingOptical waveguide light guideMiddle infraredMid infrared laser
The application discloses an improved preparation method of a hollow laser fiber for middle infrared laser. The fiber comprises a silica glass tube and a polymer layer, a single Ag layer and an AgI layer arranged on the inner surface of the glass tube in sequence. The preparation method comprises the following steps: firstly, coating a PMMA or PVA polymer layer on the inner wall of the glass tube; secondly, injecting a silver ammine complex and a dextrose reducing agent solution into the tube at the same time, and rotating the glass tube at a speed of 0.1-2 revolutions per minute during the injection process, so as to form a uniform and dense single Ag layer on the polymer layer in situ through a silver mirror reaction; and finally, injecting an iodine / cyclohexane solution to form an AgI layer on the surface of the Ag layer. Through the introduction of the polymer layer and the dynamic rotation silver plating process, the adhesion, uniformity and density of the plating layer are significantly enhanced. The obtained fiber shows extremely low transmission loss and high power resistance (can withstand 30W power continuous transmission) when transmitting 9300-10600nm wavelength laser, and is particularly suitable for medical laser equipment for cutting hard connective tissue.
Owner:萧嘉昀

Flip chip silver mirror light emitting diode chip and method of manufacturing the same

The application provides a flip silver mirror light emitting diode chip and a preparation method thereof. The flip silver mirror light emitting diode chip comprises, from bottom to top, a substrate, an epitaxial layer, a current spreading layer, a first SiO2 film layer and a first semiconductor layer; the epitaxial layer comprises, from bottom to top, an N-type semiconductor layer, an active light emitting layer and a P-type semiconductor layer, and an N-type semiconductor layer conductive step is further arranged on the top of the N-type semiconductor layer; and an isolation groove is arranged outside the epitaxial layer; wherein the included angle between the sidewall of the first SiO2 film layer and the top of the N-type semiconductor layer is an acute angle, the angle β of the isolation groove is between 88° and 90°, the bottom width L of the isolation groove is between 2 um and 4 um, and the distance L1 between the projection of the sidewall of the isolation groove in the horizontal plane and the projection of the sidewall of the active light emitting layer in the horizontal plane is between 2 um and 5 um.
Owner:JIANGXI ZHAO CHI SEMICON CO LTD

abyss mirror cabinet

The embodiment of the application relates to the technical field of furniture, and particularly relates to a deep abyss mirror cabinet, which comprises a cabinet body for being hung on a wall, a cabinet door connected to the cabinet body through upturning hardware, and a plated glass used to form a positive light transmission and reverse mirror surface; wherein one end of a side plate of the cabinet body towards the cabinet door is provided with a placing groove, the upturning hardware is arranged in the placing groove, and a supporting rod of the upturning hardware extends out of the placing groove and rotates to support the cabinet door in the case of overturning the cabinet door; a silver mirror is pasted on one side of a back plate of the cabinet body towards an opening of the cabinet body, the silver mirror and the positive light transmission and reverse mirror surface constitute a deep abyss mirror; and an adjusting part is arranged in the upturning hardware, the upturning hardware is fixed in the placing groove by adjusting the adjusting part. The upturning hardware is hidden, the infinite loop of the upturning hardware image caused by the deep abyss mirror characteristic is avoided, and the aesthetic degree is improved. Moreover, the upturning hardware is prevented from being separated from the placing groove in the case of overturning the cabinet door, the cabinet door cannot be overturned, and the reliability is improved.
Owner:NINGBO BAICHU INTEGRATION KITCHEN

Waveguide integrated terahertz wave radar

The present application relates to the technical field of terahertz wave radar, in particular to a waveguide integrated terahertz wave radar. The terahertz wave radar adopts a low-loss flexible terahertz wave waveguide tube as a signal transmission pipeline; the preparation method of the low-loss flexible terahertz wave waveguide tube comprises the following steps: S1: activating the inner wall of a polymer matrix tube; S2: modifying the inner wall by amino silane coupling agent; S3: depositing a silver plating layer on the inner wall through a silver mirror reaction. The terahertz wave radar comprises a central processing unit, a low-loss terahertz wave waveguide network and a plurality of remote antenna arrays; the present application adopts a terahertz wave waveguide as a signal transmission pipeline, the medium loss is extremely low, and the detection distance and precision of the radar are improved. Moreover, the closed structure of the waveguide has excellent shielding performance, the system is more stable, and it is more convenient to perform maintenance, system updating and heat dissipation arrangement.
Owner:SICHUAN UNIV