40 results about "Silver mirror" patented technology

The application discloses a kind of high heat-conducting high endurance low-temperature phase change microcapsule preparation methods, comprising: step 1: using C7, C9 alkane preparation cryogenic phase change material emulsion;Step 2: using melamine resin prepolymer containing polyethylene glycol and hydrophobic silicon carbide powder containing nano silicon carbide preparation modified wall material prepolymer;Step 3: using cryogenic phase change material emulsion and modified wall material prepolymer preparation phase change microcapsule;Step 4: using silver mirror reaction to phase change microcapsule surface silver plating, obtain surface silver plating microcapsule.The low-temperature phase change microcapsule prepared, using C7, C9 low-temperature mixed alkane as microcapsule core material;Using melamine resin as microcapsule wall material, and wall material contains polyethylene glycol modified material, nano silicon carbide modified material to improve the toughness of microcapsule, thermal conductivity;Microcapsule surface silver plating to resist volatility, eliminate residual formaldehyde in wall material.The application solves the problem of low thermal conductivity and poor durability of cryogenic phase change material microcapsule.

The invention relates to the technical field of semiconductor devices, in particular to a preparation method of a flip silver mirror light-emitting diode chip and the flip silver mirror light-emitting diode chip. According to the preparation method, a preparation process of a P-type first insulating layer through hole and an N-type first insulating layer through hole is improved, a partial exposure region is arranged on a photoetching plate, partial photoresist of a P-type region opening is reserved, an insulating layer can still be reserved above the P-type region opening after etching, Cl ion corrosion is avoided, and the performance of the device is improved. And the P-type first insulating layer through hole and the N-type first insulating layer through hole can be prepared together, batch preparation is not needed, thick precious metal does not need to be prepared on the top layer of the metal reflecting layer to serve as a protective layer, and the preparation cost of the light emitting diode chip is greatly reduced.

The utility model relates to the technical field of silver mirror production, and discloses a drying device for silver mirror production, which comprises a drying box and a plurality of heat dissipation grooves, a motor is fixed at the top of the drying box, a rotating shaft is fixed at the output shaft end of the motor, a placing plate I and a placing plate II are respectively fixed on the side wall of the rotating shaft, and two limiting grooves are respectively arranged on the placing plate I and the placing plate II. A plurality of through holes are formed in the limiting rods, the two ends of the limiting rods are sleeved with reset springs, limiting plates slide on the limiting rods, through grooves are formed in the first placement plate, a bearing plate is fixed to the side wall of the drying box, an air heater is fixed to the top of the bearing plate, and the air blowing end of the air heater communicates with an air blowing pipe; the other end of the air blowing pipe is communicated with a collecting pipe which is communicated with an air blowing opening. According to the utility model, the silver mirror is clamped through the cooperation of the limiting rod, the reset spring and the limiting plate, and the silver mirror is prevented from deviating due to the influence of wind power, so that the possibility that the silver mirror falls off is reduced, and the practicability of the device is improved.

This disclosure discloses a light-emitting diode (LED) chip and its fabrication method, belonging to the field of semiconductor technology. The LED chip includes an epitaxial layer and a silver mirror layer. The epitaxial layer comprises a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially. The first semiconductor layer has a first conductivity type, and the second semiconductor layer has a second conductivity type, which is different from the first conductivity type. The epitaxial layer has mesa trenches extending from the second semiconductor layer to the first semiconductor layer. The silver mirror layer covers the second semiconductor layer, the sidewalls of the mesa trenches, and the first semiconductor layer. The embodiments of this disclosure ensure that the silver mirror layer enhances the brightness of the LED chip.

The utility model discloses a novel dial plate capable of realizing micron-sized grains, which comprises a base plate and a texture sheet attached to the upper surface of the base plate, a glue layer is arranged between the base plate and the texture sheet, the texture sheet comprises a silver mirror base layer and an electroformed texture layer, and the electroformed texture layer is arranged on the upper surface of the silver mirror base layer. The utility model provides the novel dial plate capable of realizing micron-sized grains, and the surface of the dial plate can show micron-sized fine grains which cannot be generated through a stamping process and a chemical etching process, so that the dial plate is more fine and exquisite.

The application belongs to the technical field of electronic materials, and particularly relates to a high-conductivity silver / graphene composite solute and a preparation method thereof. The method comprises the following steps: acidizing graphene to obtain an acidized graphene dispersion liquid; mixing the acidized graphene dispersion liquid with a formaldehyde solution to perform an aldehyde reaction, and obtaining an aldehyde graphene dispersion liquid; mixing the aldehyde graphene dispersion liquid with a silver-ammonia solution to perform a silver mirror reaction, and obtaining a silver / graphene composite solute. The graphene is subjected to acidization and aldehyde treatment, and then is subjected to a silver mirror reaction with a silver-ammonia solution to form a silver / graphene composite solute. A small amount of the prepared silver / graphene composite solute is added to commercial silver paste, which not only optimizes the conductive path of the silver paste, but also effectively reduces the porosity problem in the sintering process, thereby significantly enhancing the electron transmission performance, greatly improving the conductivity of the silver paste, and finally promoting the solar cell to achieve higher photoelectric conversion efficiency.

The present invention relates to silver precursor inks by which a silver mirror having excellent conductivity and reflection properties after firing may be easily formed, and which have high stability. The present invention provides silver precursor inks comprising: a carboxylic acid silver precursor compound; an acetylene-based compound; a nitrogen atom-containing compound; and a solvent.

This invention relates to the field of screen printing ink technology, specifically to an IMD injection molded mirror metallic screen printing ink and its preparation method. The ink is a two-component system: Component A contains a resin liquid composed of polyvinyl butyral, nitrocellulose, modified polyester resin, and polyarylate resin, flake aluminum silver powder, and additives; Component B is a phthalic diisocyanate polymer. Ethylene glycol monobutyl ether is the main solvent, ketones / esters / aromatic hydrocarbons are prohibited, and it has no corrosive effect on polycarbonate. The mass ratio of aluminum silver powder to resin solids is controlled at 0.6:1-1.2:1. The process involves preparing the resin liquid and dispersing the aluminum silver powder and additives, followed by degassing and filtration to obtain component A; before use, component B is pre-diluted with ethylene glycol monobutyl ether, added dropwise at a low shear rate of A:B = 100:8-12, and cured. The resulting ink exhibits high mirror gloss and clarity, high-temperature adhesion resistance, and MEK wiping resistance. Under IMD injection molding conditions, it demonstrates excellent consistency in appearance and structure, making it suitable for bright silver mirror-like decoration.

The application discloses a flip silver mirror light emitting diode chip and a preparation method thereof, and relates to the technical field of semiconductors. According to the application, a first annular groove is formed on a Bragg reflection layer, and a region surrounded by the first annular groove forms a first protruding part. When a P-type first insulating layer via hole is prepared subsequently, the thickness of photoresist of an edge region of the P-type first insulating layer via hole can be improved in a targeted manner, so that the etching resistance of the photoresist of the edge of the P-type first insulating layer via hole is improved. In the process of ICP etching for preparing the P-type first insulating layer via hole, the defects of sawtooth deformation and optical heterochromia of the edge region of the P-type first insulating layer via hole can be effectively improved, so that the AOI detection yield of the flip silver mirror light emitting diode chip is significantly improved.

Provided is a laminate comprising a clearcoat layer, a base material, and a silver mirror layer in this order. Y (reflectance) in an XYZ color system (Yxy color system), when measured from a surface side where the clearcoat layer is provided, is 40% or more.

The invention relates to a high-precision silver electrode micron-sized patterning method, which mainly comprises the following steps of: preparing a hydrophobic molecular film on the surface of a pretreated substrate by a molecular vapor deposition method, patterning the molecular film by ultraviolet ozone photoetching, and precisely depositing a silver electrode in a pattern area by utilizing a silver mirror reaction. Therefore, the silver electrode with simplified and environment-friendly process, low equipment cost, high processing efficiency, excellent precision and strong material adaptability is prepared.

The present application relates to the field of LED, specifically relates to a kind of method for improving flip LED chip brightness, comprising the following steps: step 2: the first silicon dioxide layer is divided into reserved part and etching part;Photoresist is covered in reserved part;The structure of the obtained sapphire substrate, epitaxial layer, first silicon dioxide layer and photoresist is Wafer2;Step 3: using BOE etching Wafer2, obtains Wafer3;Silver mirror reflection layer is sputtered on the surface of Wafer3;Step 5: stripping photoresist.The beneficial effects of the present application are that: while etching the first silicon dioxide layer, the photoetching topography of silver mirror reflection layer is formed, and sputtering silver mirror radiation layer on the above photoetching topography can make the subsequent reserved silver mirror reflection layer edge adhere to the reserved part.Also, the step of photoetching silver mirror reflection layer is reduced.

An ornament includes a base material; and a silver particle layer containing silver particles and disposed on the base material, wherein the silver particle layer has surface resistivity of 104Ω / □ or more, and the silver particles are stacked in the silver particle layer in a thickness direction of the silver particle layer.

The utility model provides a float glass copper-silver mirror surface treatment polishing device, and relates to the technical field of glass copper-silver mirror production, the float glass copper-silver mirror surface treatment polishing device comprises a waste scrap collecting box, and a dust collecting pipeline is fixedly mounted on the inner wall of one side of the waste scrap collecting box; a float glass copper-silver mirror is placed on a suction cup above a float glass copper-silver mirror placing plate, and a second air pump and a connecting pipeline are controlled to adsorb air between the suction cup and the float glass copper-silver mirror, so that the float glass copper-silver mirror can be attached and fixed above the suction cup; after fixing is completed, a float glass copper-silver mirror containing plate can be placed on the top of a conveying belt, an electric telescopic rod is controlled to drive a connecting frame and a closed machining box to descend, the closed machining box slides into the inner side of a sealing groove above the float glass copper-silver mirror containing plate, and the closed machining box and the float glass copper-silver mirror containing plate can be in a closed state.

Provided are a laminate capable of reducing a transmission attenuation amount of millimeter waves, and a decoration device, a millimeter wave radar device, and a sensor device including the laminate.SOLUTION: A laminate includes a clear coat layer, a base material, and a silver mirror layer in this order, and the clear coat layer contains particles.SELECTED DRAWING: None

The present application relates to the field of semiconductor electronic technology, particularly relates to a kind of LED silver mirror chip manufacturing method.The manufacturing method is evaporated on GaN epitaxial wafer ITO conductive layer, then deposit a layer of etching mask, the Mesa step surface is obtained by etching mask photolithography, etching, then using photoresist covers Mesa step surface, etching gets cutting path;BOE solution is used to etch the remaining silicon dioxide, then evaporate silver mirror after photolithography again, obtain current expansion layer and reflective layer, finally, silicon dioxide protective layer and metal electrode pad layer are prepared in sequence.The manufacturing method is prepared by adjusting steps, one-time photolithography is realized, the area of GaN layer and the area of ITO on it can be maximized to retain, and its luminous efficiency is increased.

The invention discloses an LED and a preparation method thereof. The method comprises the following steps: providing a first substrate and a second substrate; microstructures arranged in an array are arranged on one side of the first substrate; forming a buffer layer on the surface of one side of the microstructure; preparing an epitaxial layer on the surface of one side, deviating from the first substrate, of the buffer layer; stripping the first substrate to enable a complementary structure of the microstructure to be located on the surface of one side, deviating from the buffer layer, of the epitaxial layer; the epitaxial layer and the buffer layer are transferred to a second substrate, so that the epitaxial layer and the buffer layer which are stacked in sequence are arranged on the surface of one side of the second substrate; plating silver on the surface of one side, deviating from the epitaxial layer, of the complementary structure of the microstructure to form a silver mirror; and preparing electrodes on two sides of the epitaxial layer to form the LED. By using the method, the secondary reflection of the emergent light of the epitaxial layer is increased, and the light reflectivity is greater than 95%, so that the extraction efficiency of the light is increased, and the brightness and the luminous efficiency of the LED are improved.

The present application relates to the technical fields of semiconductor preparation, in particular to a flip car lamp LED chip electrode structure and a generating method thereof, comprising the following steps: S1: evaporating Cr on the silver mirror protective layer body of the LED; S2: stopping evaporating Cr; evaporating Pt; S3: stopping evaporating Pt, evaporating Cr; S4: stopping evaporating Cr, evaporating Pt; S5: stopping evaporating Pt, evaporating Au; S6: stopping evaporating Au, evaporating Ti; stopping evaporating Ti, to obtain the flip car lamp LED chip electrode structure. The flip car lamp LED chip electrode structure provided by the present application and the generating method thereof provide multiple protection for the silver mirror reflection layer, and the corrosion resistance to the silicon dioxide corrosion liquid is excellent, and the anti-aging property and reliability are excellent.

The application discloses an improved preparation method of a hollow laser fiber for middle infrared laser. The fiber comprises a silica glass tube and a polymer layer, a single Ag layer and an AgI layer arranged on the inner surface of the glass tube in sequence. The preparation method comprises the following steps: firstly, coating a PMMA or PVA polymer layer on the inner wall of the glass tube; secondly, injecting a silver ammine complex and a dextrose reducing agent solution into the tube at the same time, and rotating the glass tube at a speed of 0.1-2 revolutions per minute during the injection process, so as to form a uniform and dense single Ag layer on the polymer layer in situ through a silver mirror reaction; and finally, injecting an iodine / cyclohexane solution to form an AgI layer on the surface of the Ag layer. Through the introduction of the polymer layer and the dynamic rotation silver plating process, the adhesion, uniformity and density of the plating layer are significantly enhanced. The obtained fiber shows extremely low transmission loss and high power resistance (can withstand 30W power continuous transmission) when transmitting 9300-10600nm wavelength laser, and is particularly suitable for medical laser equipment for cutting hard connective tissue.

The utility model relates to the technical field of intelligent magic mirrors, and discloses a mirror cabinet door structure based on a buckle step hidden interface, which is characterized by comprising a silver mirror glass plate, a middle frame, a rear cover and a loudspeaker, the back surface of the middle frame is connected with the rear cover, and the right side of the rear cover is provided with a hinge mounting position; one side, the upper side and the lower side of the middle frame far away from the hinge mounting positions are respectively provided with hand clasping steps, the inner sides of the hand clasping steps of the upper side and the lower side are respectively provided with a loudspeaker mounting position communicated with the hand clasping steps, a loudspeaker is mounted on the loudspeaker mounting position located on the lower portion of the middle frame, the front face of the middle frame is connected with a silver mirror glass plate, and the silver mirror glass plate covers the loudspeaker mounting position. According to the utility model, a loudspeaker and a sensor can be installed in a compatible manner while a left opening door / a right opening door are compatible, and the sound outlet and the exposed interface are both hidden at the step of the buckle, so that water and dust can be prevented, and the influence on the appearance of a mirror cabinet door can be reduced.

The utility model relates to the technical field of intelligent mirrors, and discloses a splicing type intelligent magic mirror structure based on silver mirror glass. Comprising a silver mirror glass cover plate, a non-guide mirror surface glass cover plate, a decorative front frame, an aluminum alloy lamp frame, a metal plate mounting plate, an intelligent magic mirror rear shell, a metal plate mounting plate double-faced adhesive tape, an intelligent magic mirror front shell, a waterproof interface and an intelligent magic mirror front shell double-faced adhesive tape, and the metal plate mounting plate is mounted on the silver mirror glass cover plate through the metal plate mounting plate double-faced adhesive tape; the intelligent magic mirror rear shell is connected with the metal plate mounting plate, the intelligent magic mirror rear shell is connected with the silver mirror glass cover plate through the waterproof adhesive tape, the intelligent magic mirror rear shell is connected with the intelligent magic mirror front shell in a sealed mode, the non-guide mirror surface glass cover plate is connected with the intelligent magic mirror front shell through the intelligent magic mirror front shell double faced adhesive tape, and the decoration front frame wraps the non-guide mirror surface glass cover plate. The decoration front frame is clamped with the intelligent magic mirror front shell, the aluminum alloy lamp frame is installed on the silver mirror glass cover plate, and the waterproof connector is installed on the intelligent magic mirror front shell. According to the utility model, the production cost is reduced and the waterproof performance is improved.

The utility model discloses teaching experiment equipment, which is used for an ethanol catalytic oxidation reaction and acetaldehyde inspection, and comprises an injector used for accommodating ethanol liquid; the heating device comprises a heating core, the heating core is inserted into the glass tube, and a copper piece is arranged on the heating core; the ventilation device is connected with the two balls and is used for introducing air into the glass tube; the first test tube with the branch is connected with the glass tube and is filled with a newly prepared copper hydroxide solution; and the second test tube with the branch contains a silver-ammonia solution. In the teaching experiment equipment, the ethanol liquid, the copper piece and oxygen in the air can react to generate acetaldehyde, the acetaldehyde reacts with the medicine in the test tube with the branch tube to respectively generate brick-red cuprous oxide sediment and a bright silver mirror, and the heating core is inserted into the glass tube, so that the safety is higher; by observing brick-red cuprous oxide precipitate and generation of a silver mirror, acetaldehyde generated by reaction in the glass tube can be accurately confirmed.

Provided are a laminate capable of reducing a transmission attenuation amount of millimeter waves and having excellent aesthetic appearance, and a decoration device, a millimeter wave radar device, and a sensor device including the laminate.SOLUTION: A laminate comprising: a clear coat layer; a substrate; and a silver mirror layer in this order, wherein Y (reflectance) in an XYZ color system (Yxy color system) is 40% or more when measured from a surface side on which the clear coat layer is provided.SELECTED DRAWING: None

Provided is a laminate comprising a clearcoat layer, a base material, and a silver mirror layer in this order. The clearcoat layer contains particles.

This invention relates to a pulse-broadened transient Raman detection system for studying electrocatalytic processes at electrodes, belonging to the field of Raman spectroscopy technology. It includes a resistor, digital oscilloscope, computer, electrochemical workstation, signal generator, femtosecond laser, silver mirror one, silver mirror two, crystal, dichroic mirror, pulse broadener, aperture, narrowband filter, silver mirror six, Raman filter one, reflection to aperture, objective lens, pulse delayer, silver mirror seven, Raman filter two, cemented doublet lens, electrolytic cell, and charge-coupled device. Its advantages lie in using transient Raman spectroscopy with a pulse broadener, combined with electrical excitation and time-resolved measurement methods during the electrochemical reaction process, to detect reaction intermediates on and around the electrode surface with high temporal and spatial resolution. It can detect Raman signals of reaction intermediates on the electrode surface on a femtosecond timescale, thus providing a new approach to understanding the mechanism of electrocatalytic reactions.

The application provides a silver mirror, a silver mirror preparation method and an LED chip. The silver mirror comprises a stress buffer layer, the stress buffer layer is a periodic structure in which a Ti layer and a Pt layer are sequentially stacked, the stress of the existing silver mirror can be greatly reduced through the structure, the problem of silver mirror falling off is solved, the yield of the light emitting diode chip is improved, and specifically, the stress of the silver mirror can be changed by adjusting the thickness of the Ti layer and the Pt layer.

The application provides a MetaSPR optical detection sensor for detecting metabolites in human body fluids, and belongs to the technical field of MetaSPR sensors. The MetaSPR optical detection sensor comprises a MetaSPR chip; the application is characterized in that a metal film with a silver mirror effect is deposited on the back of the MetaSPR chip, and a Ti3C2T x The mixed solution of MXene and graphene oxide is dried to obtain the MGMSPR sensor; when the MGMSPR sensor is used for detecting metabolites in human body fluids, corresponding enzymes and protective layers are added first, then the sample to be detected is added, and the corresponding products are detected by an optical or electrochemical method to realize quantitative analysis. The MGMSPR sensor prepared by the application has a unique nanoscale 3D structure on the surface, has higher sensitivity and specificity, and has a lower detection limit compared with traditional MetaSPR sensors, is suitable for detecting lower concentration samples, and has a wide application potential in the field of small molecule metabolites in human body fluids.

The application provides a flip silver mirror light emitting diode chip and a preparation method thereof. The flip silver mirror light emitting diode chip comprises, from bottom to top, a substrate, an epitaxial layer, a current spreading layer, a first SiO2 film layer and a first semiconductor layer; the epitaxial layer comprises, from bottom to top, an N-type semiconductor layer, an active light emitting layer and a P-type semiconductor layer, and an N-type semiconductor layer conductive step is further arranged on the top of the N-type semiconductor layer; and an isolation groove is arranged outside the epitaxial layer; wherein the included angle between the sidewall of the first SiO2 film layer and the top of the N-type semiconductor layer is an acute angle, the angle β of the isolation groove is between 88° and 90°, the bottom width L of the isolation groove is between 2 um and 4 um, and the distance L1 between the projection of the sidewall of the isolation groove in the horizontal plane and the projection of the sidewall of the active light emitting layer in the horizontal plane is between 2 um and 5 um.

The invention relates to the technical field of millimeter wave waveguides, and particularly provides a preparation method of a low-loss flexible millimeter wave hollow-core waveguide and the waveguide. The preparation method comprises the following steps: S1, activating the inner wall of the polymer matrix tube; s2, carrying out amination modification on the inner wall by adopting an amino silane coupling agent; and S3, a silver coating is deposited on the inner wall through a silver mirror reaction. According to the method, the coupling agent is used for replacing traditional palladium-based activation, the cost and the environmental risk are reduced, meanwhile, the binding force of the silver layer and the polymer matrix is remarkably improved, and the problems that a silver film is peeled off and the roughness is too high are solved. According to the waveguide prepared by the method, the surface roughness Ra is smaller than 12nm, and the skin depth requirement is met; the length of the waveguide can reach 8 meters, the waveguide has industrial popularization potential, the transmission loss can reach 0.73 dB / m under 220 GHz and is close to a theoretical calculation value, and the performance of the waveguide is superior to that of most existing flexible waveguides. And under the condition that the bending radius is 20 cm, the transmission loss is still kept to be lower than 0.9 dB / m, and the application requirements of flexibility and miniaturization are met.

The invention provides a light emitting diode and a preparation method. The light-emitting diode comprises a first epitaxial structure, a second epitaxial structure, a connecting electrode, an insulating structure, a first silver mirror structure and a second silver mirror structure, the first epitaxial structure is connected in series with the second epitaxial structure through the connecting electrode; the insulating structure comprises a first insulating reflecting layer and a second insulating reflecting layer, and the first insulating reflecting layer covers the first epitaxial structure, the second epitaxial structure and the connecting electrode; the first silver mirror structure and the second silver mirror structure are located on the first insulating reflecting layer and correspond to the first epitaxial structure and the second epitaxial structure respectively; the second insulating reflecting layer covers the first insulating reflecting layer, the first silver mirror structure and the second silver mirror structure; the sum of the area of the first silver mirror structure and the area of the second silver mirror structure is 32000-34000 [mu] m < 2 >.