113 results about "Evanescent wave" patented technology

The present application relates to a kind of method and kit for detecting methylation cysteine total amount, belong to the field of biotechnology and analytical test.Utilize nucleic acid aptamer with high response to free Hcy, with moderate corresponding state Hcy to construct evanescent wave optical fiber sensor.Complementary strand and tHcy of fluorescently labeled are combined with the nucleic acid aptamer fixed on optical fiber with competition.Fluorescence signal drop value is positively correlated with tHcy concentration in serum.According to the percentage of fluorescence reduction, the tHcy concentration in serum is calculated.The present application detects tHcy only needs 1 microliter serum, after diluting 1000 times, detection is carried out, and the detection result is consistent with commercial enzyme cycle method.Compared with enzyme cycle method, the present application has the advantages of low price, optical fiber can be reused more than 30 times, detection speed is fast, fastest 5 minutes, does not need enzyme, equipment miniaturization, simple operation, etc., has excellent clinical application value.

This application provides a self-injection-locked narrow-linewidth laser with a quasi-continuous locking region, comprising: a semiconductor laser source for generating an initial linewidth laser and outputting it via end-face coupling; a photonic integrated microcavity chip including a bus waveguide and a microring resonator coupled to it via an evanescent wave, for receiving the initial linewidth laser and providing feedback light to the semiconductor laser through Rayleigh backscattering of the microring resonator to excite a self-injection-locking effect; the microring resonator is a compact folded waveguide microcavity with an ultra-low free spectral range, the free spectral range of which is less than a preset threshold, so that when the driving current of the semiconductor laser is changed for wavelength tuning, the self-injection-locking regions of adjacent resonant modes in the cavity physically overlap or are closely spliced ​​in the current tuning parameter space, so that the semiconductor laser can continuously transition between adjacent modes without experiencing permanent unlocking during continuous current tuning, forming a quasi-continuous locking region.

The invention relates to the field of optical fibers, in particular to a D-type optical fiber based on Fe3GaTe2 nanosheets and a preparation method and application of the D-type optical fiber. The invention discloses a D-type optical fiber based on a Fe3GaTe2 nanosheet. The D-type optical fiber comprises a D-type optical fiber and a Fe3GaTe2 layer deposited on a D-type plane of the D-type optical fiber. By utilizing the evanescent field characteristic of the D-type optical fiber, the Fe3GaTe2 nanosheet is deposited on the D-type plane of the D-type optical fiber, and magnetic anisotropy change (such as magnetization direction switching) is generated under the action of an external magnetic field, so that the effective refractive index of the optical fiber is changed; the change is converted into an optical path difference in the Michelson interferometer. Finally, the magnetic field intensity can be inverted by measuring the FSR change of the interference spectrum. The room-temperature MA adjustability of the Fe3GaTe2 nanosheets provides a larger refractive index change range (superior to that of magnetic fluid), and the nanosheets are not easy to degrade, so that the D-type optical fiber has higher sensitivity and temperature performance.

The present application relates to a kind of based on micro-nano fiber and scattering medium substrate coding element and speckle spectrometer.The coding element includes sealed cavity, micro-nano fiber and scattering medium substrate;Including drawstring transition zone and waist zone in the body of micro-nano fiber, drawstring transition zone forms leaky mode, waist zone generates evanescent field, the body of micro-nano fiber penetrates sealed cavity, so that drawstring transition zone and waist zone are located in sealed cavity;Scattering medium substrate is fixed in sealed cavity, and the waist zone of micro-nano fiber is overlapped on scattering medium substrate, scattering medium substrate is used to receive evanescent field and is coupled leaky mode to obtain scattering pattern information;Wherein, in the direction parallel to waist zone, scattering medium substrate includes more than two scattering zones, and the light transmittance of each scattering zone is different, and the difference between maximum light transmittance and minimum light transmittance is 20%~80%.Speckle spectrometer using the coding element of the present application has the advantages of small size, low cost while high spectral resolution.

The application provides a visual micro-nano optical waveguide refractive index sensing system, and a hardware part comprises a nano fiber taper coupled fluorescent doped polymer microwire; the nano fiber taper coupled fluorescent doped polymer microwire is coupled by a nano fiber taper and a fluorescent doped polymer microwaveguide; the nano fiber taper is obtained by adopting a flame tapering method from a standard single-mode optical fiber; the fluorescent doped polymer microwaveguide is directly prepared by wire drawing from a mixed solution doped with a fluorescent dye; the nano fiber taper and the fluorescent doped polymer microwaveguide placed in a channel of an optical substrate jointly form an evanescent wave coupling structure; a signal analysis part enhances, edge extracts, smoothes and peak extracts a fluorescent image of the microwire through an image analysis algorithm, obtains an oscillation period of a fluorescent light path in the microwire under a current environment, establishes a response relationship between the light path period and the environmental refractive index, realizes direct real-time obtaining of environmental change conditions from optical images of a sensing unit shot by a camera, and thus obtains the change of the refractive index.

This application discloses a fiber optic fluorescence level sensor based on evanescent waves, relating to the field of fiber optic sensing. The sensor includes: a light source module that outputs excitation light, which is sent to a fiber optic sensing unit to generate a fluorescence signal; a transmission fiber responsible for bidirectional signal transmission; a fiber optic sensing unit comprising a fiber optic strip D-groove structure, an encapsulation structure, a sensitive material, and a floating piston. The piston divides the encapsulation structure into two sections: the lower section contains the liquid to be measured, and the upper section integrates the sensitive material and the fiber optic strip D-groove structure. The piston floats synchronously with the liquid surface, changing the effective contact area between the sensitive material and the fiber optic strip D-groove structure, causing a regular change in the fluorescence intensity excited by the evanescent wave; a fiber optic spectrometer to acquire wavelength-intensity spectral information; and a computer module to perform data visualization, achieving real-time liquid level monitoring based on changes in fluorescence intensity. This sensor can improve upon the problems of existing fiber optic level sensors, such as complex fabrication, high cost, limited range, high equipment requirements, and poor adaptability to harsh environments.

Optical states in TIR-based image displays may be modulated by movement of electrophoretically mobile particles into and out of the evanescent wave region at the interface of a high refractive index convex protrusions and a low refractive index medium. The movement of particles into the evanescent wave region may frustrate TIR and form dark states at pixels. Movement of particles out of the evanescent wave region may allow for TIR of incident light to form bright states at pixels. The movement of the particles may be controlled by employing the drive methods of pulse width modulation, voltage modulation or a combination thereof.

Implantable devices and / or sensors can be wirelessly powered by controlling and propagating electromagnetic waves in a patient's tissue. Such implantable devices / sensors can be implanted at target locations in a patient, to stimulate areas such as the heart, brain, spinal cord, or muscle tissue, and / or to sense biological, physiological, chemical attributes of the blood, tissue, and other patient parameters. The propagating electromagnetic waves can be generated with sub-wavelength structures configured to manipulate evanescent fields outside of tissue to generate the propagating waves inside the tissue. Methods of use are also described.

The application provides a photoelectric detector and a manufacturing method thereof, the photoelectric detector comprising: a waveguide arranged on a substrate and composed of a first material; and a light absorption layer arranged on a surface of the waveguide; the light absorption layer comprises a first material part and a second material part, the first material part is provided with a recess part, the second material part is arranged in the recess part, the first material part is composed of the first material, the second material part is composed of a second material, and the refractive index of the first material is smaller than that of the second material for the light of the predetermined wavelength. According to the application, the light absorption layer of the photoelectric detector is arranged in a structure formed by alternately arranging two materials with different refractive indexes, thereby increasing the absorption rate of the evanescent wave in the absorption layer, and high responsivity and high bandwidth are achieved.

The invention provides an optical waveguide and heterojunction two-dimensional material integrated nonvolatile storage structure and an application method, and relates to the technical field of photoelectron integration. A heterojunction two-dimensional material layer is arranged in an evanescent field area of an optical waveguide layer, so that when an electric field pulse is applied to the heterojunction two-dimensional material layer through a positive electrode layer and a negative electrode layer, the heterojunction two-dimensional material layer is not subjected to evanescent field pulse; the heterojunction two-dimensional material layer can generate various non-volatile heterojunction polarization states, so that the optical constant and the optical state of the non-volatile storage structure are changed, the optical state can be stored by utilizing the non-volatility, and the optical memory function is realized. Even under the condition of power failure, the stored optical state cannot be lost, and ultra-low static power consumption can be realized. The overturning of the polarization state of the heterojunction is realized by the overturning of the heterojunction domain, so that the power consumption of the nonvolatile storage structure is far lower than the heat power consumption required by a phase change memory or a thermo-optic device.

The present application relates to the technical field of optical fiber sensor, more particularly, to a kind of acoustic wave sensor based on micro-nano fiber evanescent field coupling and preparation method thereof, the purpose of the present application is to provide acoustic wave sensor with low cost, demodulation simple, photoelectric system compatibility good many aspects of advantages.The acoustic wave sensor of the present application includes substrate, transducer diaphragm, thin film modulation layer and bipyramidal micro-nano fiber;Substrate is provided with through hole, transducer diaphragm is pasted on the upper surface of substrate;Thin film modulation layer is pasted and fixed on the upper surface of transducer diaphragm, bipyramidal micro-nano fiber is fixed on thin film modulation layer, the waist region of bipyramidal micro-nano fiber is suspended above transducer diaphragm, and the position corresponds with through hole, coupling modulation space is formed between the waist region of bipyramidal micro-nano fiber and transducer diaphragm.The present application also provides a kind of method for preparing the acoustic wave sensor.

The invention provides a waveguide light collecting switch unit and an array thereof, the waveguide light collecting switch unit comprises a first bus waveguide, a second bus waveguide and a light switch structure, bridge waveguides, the first bus waveguide and the second bus waveguide are arranged in a one-to-one correspondence mode and combined to form a waveguide set with L > 1 light transmission paths, and in the waveguide set, L is larger than 1. The bridge waveguides operate synchronously under the action of the driving part, and switching of evanescent field coupling states of optical signals in the L optical transmission paths is achieved. According to the invention, through the waveguide set with L > 1 optical transmission paths, the device can be well adapted to an interface with a plurality of optical transmission paths, and has the advantages of simple control, large port density and high optical signal transmission capability; and the waveguide light-collecting switch array formed by combining the waveguide light-collecting switch units can also realize the function of any routing between the input port and the output port.

The invention provides a cold atom control platform. The platform comprises a waveguide and a gold film, wherein the gold film is located below the waveguide; the gold film is used for enhancing an evanescent field above the waveguide; the waveguide comprises a first dielectric body, a second dielectric body and a third dielectric body; the second medium body and the third medium body are communicated with the same end of the first medium body to form a first transmission channel and a second transmission channel; and the first transmission channel and the second transmission channel are used for bidirectionally transmitting red detuned light and unidirectionally transmitting blue detuned light so as to control cold atom transmission.

The invention provides a novel micro-structure polymer optical fiber tetracycline sensor based on C3N4-MIL-53 sensitive material modification, which can realize low-cost, high-sensitivity and rapid detection of tetracycline concentration in water. The optical fiber probe is characterized in that the optical fiber probe is composed of a side-cast area and a microgroove area, and the surface of the side-cast area is sequentially coated with a layer of Canadian resin and a C3N4-MIL-53 sensitive film. Through the microgroove structure, most of light transmitted by the optical fiber can be concentrated in a specific angle range for transmission, so that the intensity of evanescent waves is effectively enhanced, and the sensitivity of the sensor is improved. The C3N4-MIL-53 sensitive material is adopted for modification, and the specific adsorption effect of the C3N4-MIL-53 sensitive material on tetracycline is utilized, so that the rapid, high-sensitivity and high-selectivity detection function of the sensor on the concentration of tetracycline in water is realized.

The invention discloses an on-chip stimulated Raman photo-thermal gas sensing system and method, and particularly relates to the technical field of gas analysis and measurement. Pump light and Stokes light interact with gas to be detected in a sensing waveguide evanescent field area to excite gas molecules to generate a stimulated Raman process and generate local temperature rise through thermal relaxation, so that the refractive index change of the gas is caused, and probe light generates a phase modulation signal related to the refractive index change. Phase modulation signals and background phase disturbance related to the gas photothermal effect are distinguished and differentiated, so that phase background noise is suppressed, and the signal-to-noise ratio and sensitivity of gas measurement are improved. Functional units such as the laser, the sensing waveguide and the detector are integrated into a single chip to form a gas measurement system which is compact in structure, low in power consumption and high in anti-noise capability, and the problems of weak signal, high background noise and low integration level in traditional waveguide Raman gas measurement are effectively solved.

The invention relates to a membrane component (79) for arrangement on an ATR measuring element (24) conducting a measurement radiation at a distance from a sensor surface (26) of the ATR measuring element (24) intended to form an evanescent field, wherein the membrane component (79) comprises: - a membrane (84) which is permeable to a target liquid (ZF) and is made of a membrane material (83), and - a sacrificial component (86) which is arranged on one side of the membrane (84) and is formed from a sacrificial material (87) which is different from the membrane material (83) and is soluble by the target liquid (ZF).

The invention provides a liquid injection microstructure photonic crystal fiber capable of realizing temperature and solution refractive index dual-parameter sensing. A cladding of the optical fiber adopts a multi-layer air hole structure to enhance light field constraint, and a liquid injection hole is formed in the center of a fiber core to enhance interaction between an evanescent field and liquid to be detected; a fiber core region adopts a design of doping two layers of GeO2 with different concentrations, so that a fundamental mode LP01 is coupled with a plurality of acoustic modes to generate a multi-peak Brillouin spectrum, and the multi-peak Brillouin spectrum can be used for realizing dual-parameter sensing. According to the invention, synchronous measurement in a temperature range (20-70 DEG C) and a refractive index range (1.317-1.342) is realized by utilizing bimodal Brillouin frequency shift coupled by an LP01 mode and an L01 and L03 acoustic mode. Meanwhile, parameters such as the doping concentration of the fiber core and the radius of the liquid injection hole are optimized through numerical simulation, and the influence rule of the parameters on the refractive index sensitivity and the double-peak characteristic is revealed. Compared with a tapered optical fiber or a D-shaped optical fiber and other structures for refractive index sensing, the optical fiber provided by the invention can realize higher refractive index sensitivity and temperature-refractive index dual-parameter sensing, and has good application potential.

The application provides a kind of MNF magnetic field test method and device based on NSiV double color heart, it includes optical fiber laser (1), magnetic field testing device (2), photoelectric conversion module (3), ADC module (4), microprocessor (5), computer (6).The application adopts the principle of evanescent field enhancement Mach-Zehnder, through diamond NSiV double color heart nanometer material coating MNF for sensing, the light source output by optical fiber laser excites diamond NSiV double color heart nanometer material to make it produce fluorescence, and interference occurs with the light beam in sensing unit.When the magnetic field changes, the spectrometer will detect different interference spectrum, define new average sensitivity as the judgment standard of sensor performance, so as to realize real-time monitoring of magnetic field.The application takes magnetic field detection as the target, effectively solves the problems of traditional magnetic field sensor, such as magnetic hysteresis, flammable, large volume, not easy to operate, etc., and realizes real-time measurement of magnetic field.

Disclosed are embodiments photonic integrated circuits with photo-switchable components. Embodiments are illustrated in the form evanescent field perturbation sensors in which receptor molecules are patterned onto the sensor substrate with precision. In particular, light patterning and molecular-based photo-responsive motifs allow for the positioning of receptor molecules on the operational elements of the evanescent field perturbation sensors. Receptor molecules are further detachable from the sensor and capable of replacement with additional receptor molecules of the same type, or one or more alternative receptor molecules capable of receiving the same or different analyte receptor molecules. In certain embodiments the light sources for patterning and receptor molecule interchange may integrated within the sensor and / or sensor platform itself. In certain embodiments a method of recharging and / or reconfiguring the receptor molecules, and a machine for carrying out the method is disclosed.

This invention provides an optical chip for exciting fluorescence signals, comprising: a fluorescence excitation structure, a polarization rotation reflection module, and a substrate; the fluorescence excitation structure is formed on the substrate and includes a transmission waveguide and a sample well; the transmission waveguide outputs a first excitation light to the polarization rotation reflection module; the polarization rotation reflection module is used to polarize and rotate the first excitation light by 90 degrees to generate a second excitation light, and transmits the second excitation light to the transmission waveguide. This invention also provides a fluorescence detection method, wherein a first excitation light is emitted into the transmission waveguide, and a sample is placed within the evanescent field of the light transmitted through the transmission waveguide; the first excitation light is polarized and rotated by 90 degrees to generate a second excitation light, and the second excitation light is transmitted back to the transmission waveguide; based on the first and second excitation light, the fluorescence signal excited by the sample in the sample well is detected. Therefore, this invention superimposes two excitation lights with mutually orthogonal polarization states, improving the signal-to-noise ratio of the fluorescence signal without generating standing waves.

The invention belongs to the technical field of on-chip integrated sensing, and provides a chip sensing assembly and a trace gas detection device. The chip sensing assembly comprises a first mode field coupler, a power beam splitter, a non-uniform free spectral range micro-ring resonator array, a power beam combiner and a second mode field coupler which are sequentially connected in series; wherein the non-uniform free spectral range micro-ring resonator array is formed by connecting N micro-ring resonators with different resonant ring lengths in parallel, an evanescent field of an annular waveguide of each micro-ring resonator is exposed to the surface environment of the chip, and the micro-ring resonator array is used for capturing absorption information of gas molecules by using a plurality of evanescent fields; and outputting N paths of detection light carrying absorption information of gas molecules to a power beam combiner. Through a plurality of micro-ring resonators with different ring lengths, the spectrum sampling interval is greatly compressed equivalently, and the limitation of the free spectrum range of a single micro-ring is broken through, so that the on-chip system has the capability of detecting narrow line width absorption characteristics of gas molecules.

This application relates to a display panel and display device, including a substrate; a light-emitting device disposed on one side of the substrate; and an encapsulation structure disposed on the side of the light-emitting device away from the substrate. The encapsulation structure includes a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer stacked together. At least one of the first and third encapsulation layers includes at least one combined film layer, which includes a first film layer and a second film layer. In the same combined film layer, the first film layer is located on the side of the second film layer away from the light-emitting device. The refractive index of the first film layer is less than that of the second film layer, and the thickness of the first film layer is less than that of the second film layer. In this application, when the light emitted by the light-emitting device undergoes total internal reflection at the interface between the second and first film layers, its electromagnetic field penetrates into the first film layer in the form of an evanescent wave. Because the thickness of the first film layer is designed to be sufficiently thin, the evanescent wave can penetrate the first film layer, thereby disrupting the conditions for total internal reflection.

The application discloses a chipped wavelength standard device and a preparation method thereof, and belongs to the field of wavelength standards. The device comprises a frequency discrimination module, a pumping module, a locking module and a substrate. The frequency discrimination module comprises a MEMS atomic gas chamber, a micro-ring resonant cavity and a photodetector; the pumping module mainly comprises a laser and a control circuit thereof; the locking module comprises a phase-locked amplifier, a reference signal source and a PID circuit. The substrate comprises a copper or ceramic heat sink and a TEC temperature controller. The application combines the micro-ring resonant cavity and the MEMS atomic gas chamber, directly pumps the micro-ring resonant cavity integrated optical path by the laser, locks the laser wavelength on the micro-ring resonant cavity resonance peak based on the micro-cavity self-injection locking method, reduces the laser noise and realizes the laser linewidth compression. The micro-cavity evanescent field excites the atomic transition in the atomic gas chamber, and the frequency is discriminated by detecting the fluorescence. The laser frequency is locked by controlling the laser current and the micro-cavity temperature through the frequency discrimination signal, and the chip-level wavelength metrology and value traceability are realized.

The application provides a micro-ring resonance gas concentration detection system and method based on a quantum ringing effect, which can be applied to the technical field of gas concentration detection. The system comprises: an optical frequency comb emitting a first laser beam; a micro-ring resonance cavity enabling the first laser beam to interact with a gas based on an evanescent field effect to obtain a modulated light beam; a double-swing solid angle mirror interferometer delaying a reference light beam and a signal light beam corresponding to the modulated light, and adjusting the frequency of the signal light beam during the delay process, so that the delayed reference light beam and the signal light beam interfere with each other; a detector detecting the interference light beam to obtain a detection signal; a processor performing band-pass filtering on data corresponding to sampling points in the detection signal; performing envelope detection on the detection signal component obtained by filtering to obtain a decay time; and obtaining the concentration of the measured gas according to a plurality of decay times corresponding to a plurality of laser frequencies, thereby improving the gas concentration detection precision and reducing the system volume.

The invention relates to a GaSb-based 2.3 m single-frequency semiconductor laser and a working method thereof, and belongs to the technical field of semiconductors. The GaSb-based 2.3 m single-frequency semiconductor laser comprises a GaSb-based semiconductor laser and an external cavity structure; the GaSb-based semiconductor laser is provided with a main waveguide, the end face away from the outer cavity is provided with a high-reflection layer, and the end face close to the outer cavity is provided with a partial-reflection layer. The outer cavity structure is provided with a micro-ring resonant cavity, the micro-ring resonant cavity is coupled and connected to the main waveguide through a lateral evanescent field, and the high reflection layers and the partial reflection layers on the two sides and the micro-ring resonant cavity form a composite resonant system. The micro-ring resonant cavity and the coating reflection structure are integrated in the GaSb-based semiconductor laser, continuous oscillation of light between the reflection layers at the two ends is achieved, and stable single-frequency 2.3 m laser output is finally obtained by means of the resonance mode selection effect of the micro-ring resonant cavity.

The application discloses a deep-shift frequency super-resolution microscopic chip based on a nonlinear evanescent field and an imaging method thereof, and belongs to the field of shift frequency super-resolution microscopic imaging. The deep-shift frequency super-resolution imaging chip comprises, from bottom to top, a substrate layer, a nonlinear optical material film layer, a surface plasmon film system and a microstructure layer which are sequentially stacked. A polygonal hole slot is entirely provided in the central region of the surface plasmon film system and the microstructure layer, and the exposed part of the nonlinear optical material film layer serves as an imaging sample placement area. A plurality of groups of microstructures are engraved on the upper surface of the microstructure layer around the polygonal hole slot. The application utilizes the nonlinear four-wave mixing effect to excite, control and enhance the super-large wave vector evanescent field and applies the super-large wave vector evanescent field to shift frequency super-resolution imaging, solves the problem that the wave vector of the evanescent field provided by a natural waveguide material is limited and the larger the wave vector is, the weaker the signal is, and breaks through the resolution upper limit of the existing linear shift frequency super-resolution imaging technology under the premise of ensuring the imaging quality.

The invention relates to a quantum sensing microsystem and method. Comprising optical coupling between a light source and a grating coupler, integration of the grating coupler on a main optical waveguide, evanescent field coupling between the main optical waveguide and a diamond NV color center, near-field coupling between the main optical waveguide and an optical filter, and evanescent field coupling between the optical filter and a photodiode. The light source is used for emitting laser and enabling the laser to enter the grating coupler; the grating coupler is used for transmitting the laser to the diamond NV color center through the main optical waveguide, and the diamond NV color center emits fluorescent light according to laser excitation; the optical filter is used for filtering laser and coupling fluorescence to the photodiode through an evanescent field; the photodiode is used for generating a corresponding digital signal based on the fluorescence, and the digital signal is used for calculating a magnetic field measurement result of the to-be-measured magnetic field where the quantum sensing microsystem is located. According to the invention, the size of the quantum sensing system can be reduced.

The application discloses a large-scale and reconfigurable three-dimensional integrated optical neural network chip, and belongs to the field of optical neural networks, and comprises an optical information input layer, a reconfigurable hidden layer, a detection output layer and a feedback control structure; the reconfigurable hidden layer comprises a plurality of cascaded waveguide structures, wherein each waveguide structure comprises an independent modulation area and a continuous coupling area, the optical waveguides of the independent modulation area are independently transmitted and independently modulated by a light modulator; after reaching the continuous coupling area, the evanescent waves of the waveguide array are continuously coupled with each other in the transmission direction and are integrally modulated by the light modulator; and the feedback control structure adjusts a light modulator loading signal according to the detected output light intensity spatial distribution information, so that the reconfigurable hidden layer identifies the current input signal. The application can greatly improve the actual computing power of the current on-chip integrated optical neural network, and also provides a solution to the problems of low reconfigurability and large system size of the current three-dimensional spatial diffraction optical neural network.

The application relates to the technical field of optical devices, and discloses a hetero-integrated thin-film lithium niobate wafer coupling structure, a preparation method and an optical device. The application comprises a thin-film lithium niobate photonic chip, and the thin-film lithium niobate photonic chip is integrated with a III-V active waveguide layer through a hetero-integrated wafer bonding technology; the thin-film lithium niobate photonic chip is provided with a lithium niobate waveguide layer, and the output end of the lithium niobate waveguide layer is coupled with the input end of the III-V active waveguide layer in a vertical evanescent wave mode; and the III-V active waveguide layer is covered with an N-type metal electrode and a P-type metal electrode. The III-V active waveguide layer is integrated onto the lithium niobate photonic chip through the hetero-integrated wafer bonding technology, and the function of on-chip light detection of the thin-film lithium niobate platform is realized. The III-V active waveguide layer and the thin-film lithium niobate photonic chip are optically interconnected in a vertical evanescent wave coupling mode through an III-V / LN mode spot converter which is designed in an optimized mode, and high-efficiency coupling between the III-V active waveguide layer and the lithium niobate waveguide is realized.