335 results about "High energy particle" patented technology

Holey optical fibers (e.g. photonic fibers, random-hole fibers) are fabricated with quantum dots disposed in the holes. The quantum dots can provide light amplification and sensing functions, for example. When used for sensing, the dots will experience altered optical properties (e.g. altered fluorescence or absorption wavelength) in response to certain chemicals, biological elements, radiation, high energy particles, electrical or magnetic fields, or thermal / mechanical deformations. Since the dots are disposed in the holes, the dots interact with the evanescent field of core-confined light. Quantum dots can be damaged by high heat, and so typically cannot be embedded within conventional silica optical fibers. In the present invention, dots can be carried into the holes by a solvent at room temperature. The present invention also includes solid glass fibers made of low melting point materials (e.g. phosphate glass, lead oxide glass) with embedded quantum dots.

A single crystal having the general composition, Ce2x(Lu1-yYy)2(1-x)SiO5 where x=approximately 0.00001 to approximately 0.05 and y=approximately 0.0001 to approximately 0.9999; preferably where x ranges from approximately 0.0001 to approximately 0.001 and y ranges from approximately 0.3 to approximately 0.8. The crystal is useful as a scintillation detector responsive to gamma ray or similar high energy radiation. The crystal as scintillation detector has wide application for the use in the fields of physics, chemistry, medicine, geology and cosmology because of its enhanced scintillation response to gamma rays, x-rays, cosmic rays and similar high energy particle radiation.

Holey optical fibers (e.g. photonic fibers, random-hole fibers) are fabricated with quantum dots disposed in the holes. The quantum dots can provide light amplification and sensing functions, for example. When used for sensing, the dots will experience altered optical properties (e.g. altered fluorescence or absorption wavelength) in response to certain chemicals, biological elements, radiation, high energy particles, electrical or magnetic fields, or thermal / mechanical deformations. Since the dots are disposed in the holes, the dots interact with the evanescent field of core-confined light. Quantum dots can be damaged by high heat, and so typically cannot be embedded within conventional silica optical fibers. In the present invention, dots can be carried into the holes by a solvent at room temperature. The present invention also includes solid glass fibers made of low melting point materials (e.g. phosphate glass, lead oxide glass) with embedded quantum dots.

A plasma source for processing or imaging a substrate, for ion source for proton therapy, for ion thrusters, or for high energy particle accelerators includes a coolant circuit passing adjacent to a plasma ion reactor chamber and RF antenna coils. In a method for operating the plasma ion source having an induction coil adjacent to a reaction chamber for inductively coupling power into the plasma from a radio frequency power source, the method comprises pumping a dielectric fluid into contact with induction coils of the plasma ion source along the coolant circuit. Use of the dielectric fluid both electrically insulates the plasma chamber, so that it can be biased to 30 kV and up, and efficiently transfers heat away from the plasma chamber.

The cut laminate edges of aircraft fuel tanks formed of carbon fiber reinforced polymers are sealed to prevent the exposure of carbon fibers to combustible fuel. The edge seal is produced from a prepreg form using a thermosetting resin matched to the characteristics of the resin used in the laminate. The prepreg form can be applied to the cut laminate edges either before or after the laminate is cured. The edge seal acts a dielectric layer that both electrically insulates the cut laminate edges from the fuel and mechanically contains energetic particles produced at the edges due to lighting strikes or other sources of electrical charges.

A particle therapy system for irradiating a volume of a patient to be irradiated with high-energy particles is provided. The system includes a radiation outlet of a radiation delivery and acceleration system from which a particle beam exits in order to interact with the patient positioned in an irradiation position; an imaging device for verifying the position of the volume to be irradiated in relation to the particle beam; and a patient-positioning device with which the patient can be brought into the irradiation position for irradiation. The imaging device checks the position of the volume to be irradiated in an imaging position of the patient that is spatially remote from the irradiation position, and the patient-positioning device automatically changes position between imaging position and irradiation position.

The present invention provides an array of pixels for the detection of a flash of electromagnetic radiation or a cloud of impinging high energy particles. Each pixel in the array comprises a radiation receptor for converting the electromagnetic radiation or impinging high energy particles into a radiation signal, and a converter for converting the radiation signal into pulses. The array further comprises a circuit for comparing one or more of the criteria pulse amplitude, pulse arrival time, time to convert a pulse in a digital signal, pulse duration time, pulse rise and fall time or integral of pulse over time for pulses coinciding on pixels in a predetermined neighborhood. The array also comprises a circuit for suppressing those pulses that are compared negatively versus the corresponding pulses in another pixel of the neighborhood for the same one or more criteria. A corresponding method is also provided.

A pixel for the detection of electromagnetic radiation or high energy particles or charge packets, in particular for detecting X-ray photons, comprises a radiation receptor for converting the radiation into a sensing signal, the pixel being adapted for performing both pulse detection and integration of the same sensing signal.

A method for fabricating free standing thickness of materials using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III / IV materials, and others. In a specific embodiment, the present method includes providing a semiconductor substrate having a surface region and a thickness. The method includes subjecting the surface region of the semiconductor substrate to a first plurality of high energy particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature. In a specific embodiment, the method includes subjecting the surface region of the semiconductor substrate to a second plurality of high energy particles generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level. In a preferred embodiment, the semiconductor substrate is maintained at a second temperature, which is higher than the first temperature. The method frees the thickness of detachable material using a cleaving process, e.g., controlled cleaving process.

A pixel for the detection of electromagnetic radiation or impinging high energy particles, in particular for detecting X-ray photons, comprises a radiation receptor for converting the electromagnetic radiation or impinging high energy particles into a radiation signal, a converter for converting the radiation signal into a pulse train, and an analog accumulator for accumulating the pulses of a pulse train to an analog signal for readout. The analog accumulator is adapted such that the analog signal is non-linearly proportional to the pulse count. Such non-linear analog accumulator has the advantage of an large dynamic range.

The invention relates to a multidirectional high energy particle detector. The detector includes a direction sensor which includes semiconductor detectors, the semiconductor detectors are staggeredly arranged in four rows on a side cylinder of a cylindrical pedestal which has a semi-circular cross section, and the semiconductor detectors are positioned with an interval angle of 11.25 degrees; a high energy electron spectrum sensor which includes three different conductor detectors; a high energy particle spectrum sensor which includes three different semiconductor detectors; main amplifiers; peak value retainers; ADC collection circuits; an FPGA processing chip; wherein the output terminals of preposing amplifiers are connected with the corresponding output terminals of the main amplifiers respectively via forming circuits, the output terminals of main discharge circuits are connected with the corresponding output terminals of the peak value retainers respectively, the output terminals of the peak value retainers are connected with the corresponding output terminals of the ADC collection circuits respectively, and the output terminals of the ADC collection circuits are connected with the output terminal of the FPGA processing chip after the analog-digital conversion. The detector detects the flux of the high energy particle along a 180 degrees sector direction, and also detects the power spectrum of the high energy particle along a vertical sector direction.

The invention discloses a luminescent material doped with niobate, tantalate and the mischcrystal thereof, and a crystal growth method thereof for the melt process. The molecular formula of the compound is (RExRE'y) M1-x-y-z-deltaM'z (Ta1-u+delta' Nbu+delta') O4+delta (x equals to 0 to 0.5, y equals to 0 to 0.5, 0 is smaller than x+y and x+y is smaller than and equal to 0.5, z equals to 0 to 0.5, delta equals to -0.4 to 0.4, and delta'+delta' equals to delta), wherein, the RE and the RE' are Yb, Nd, Er, Tm, Ho, Ce, Pr, Eu, Bi, Ti and Cr, and the M and the M' are Sc, Y, Gd and Lu. The well prepared raw material becomes the starting material of crystal growth after uniformly mixing, pressing molding and high temperature sintering; the starting material for crystal growth is put into a crucible and sufficiently heated and fused to form an initial melt for melt process growth, and then the melt methods can be used for crystal growth such as a Czochralski method, a Bridgman-Stockbarge method, a TGT method and other melt methods; and the (RExRE'y) M1-x-y-z-deltaM'z (Ta1-u+delta' Nbu+delta') O4+delta can be used as the detection material for the working laser material, the high-energy rays, the high-energy particle, and the like.

A method for fabricating free standing thickness of materials using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III / IV materials, and others. In a specific embodiment, the present method includes providing a semiconductor substrate having a surface region and a thickness. The method includes subjecting the surface region of the semiconductor substrate to a first plurality of high energy particles provided at a first implant angle generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature. In a specific embodiment, the method includes subjecting the surface region of the semiconductor substrate to a second plurality of high energy particles at a second implant angle generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level. In a preferred embodiment, the semiconductor substrate is maintained at a second temperature, which is higher than the first temperature. The method frees the thickness of detachable material using a cleaving process, e.g., controlled cleaving process.

Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy α-particles or γ-photons generated by neutron interaction.

A method enhances a process and profile simulator algorithm to predict the surface profile that a given plasma process will create. The method first tracks an energetic particle and then records the ion fluxes produced by the energetic particle. A local etch rate and a local deposition rate are computed from neutral fluxes, surface chemical coverage, and surface material type that are solved simultaneously.

The present invention provides an array of pixels for the detection of a flash of electromagnetic radiation or a cloud of impinging high energy particles. Each pixel in the array comprises a radiation receptor for converting the electromagnetic radiation or impinging high energy particles into a radiation signal, and a converter for converting the radiation signal into pulses. The array further comprises a circuit for comparing one or more of the criteria pulse amplitude, pulse arrival time, time to convert a pulse in a digital signal, pulse duration time, pulse rise and fall time or integral of pulse over time for pulses coinciding on pixels in a predetermined neighborhood. The array also comprises a circuit for suppressing those pulses that are compared negatively versus the corresponding pulses in another pixel of the neighborhood for the same one or more criteria. A corresponding method is also provided.

The invention provides an integrated radiation effect detector for three-dimensional high-energy particles. The detector comprises an LET spectrum detector, a radiation dose detector, a different potential detector, a digital data collection circuit, a data processing unit and a communication module; the LET spectrum detector, the radiation dose detector and the different potential detector measure the particle radiation LET spectrum, the radiation dose and the satellite surface different potential respectively, a generated voltage signal is converted into a digital signal by the digital signal collection circuit, and the digital signal is output to the data processing unit, the data processing unit analyzes the voltage amplitude and trend of the digital signal, data reflecting the LET spectrum, the radiation dose and the satellite surface different potential information is obtained, and the data processing unit makes data interaction with a satellite after being connected to the satellite via the communication module. According to the detector, three independent space detection functions are integrated to detect different indexes of the space environment in an integrated manner, the integrated degree is improved, and the cost and weight are reduced.

Free standing thickness of materials are fabricated using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III / IV materials, and others. A semiconductor substrate is provided having a surface region and a thickness. The surface region of the semiconductor substrate is subjected to a first plurality of high energy particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature. The surface region of the semiconductor substrate is subjected to a second plurality of high energy particles generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level.

The invention discloses a novel static random access memory (SRAM) storage unit preventing a single particle from turning. The storage unit comprises a first input / output port, a first potential turning recovery driving circuit, a voltage retaining circuit, a second potential turning recovery driving circuit and a second input / output port which are connected in series with one another sequentially. An automatic recovery function for voltage turning when a sensitive node is impacted by a high-energy particle can be realized; according to a simulation result of a TSMC 0.18 mu_m process, a turning threshold value LETth is more than 500 MeV / (mg.cm<2>); compared with the conventional storage unit preventing the single particle from turning, the SRAM storage unit has the characteristic of high writing speed; the recovery time can be effectively shortened; by adopting a unidirectional clock and a small-clock amplitude, a clock network is relatively simple and relatively high in reliability; the clock is only connected with the gate of a read-write transistor, and the clock load is relatively small; and the sensitive node can be used for reinforcing multi-node turning of the single particle, which is caused by drains positioned on a P-type tube and an N-type tube..

An external accessory for a portable fan including a base having an air inlet located in a side wall of the base, and an air outlet detachably connectable to the base, the accessory including a high energy particle arrester filter and connectors for detachably connecting the accessory to the fan so that the filter is located upstream from the air inlet of the fan.

A method of designing an integrated circuit to be Single Event Upset (SEU) immune by converting one or more Single Event Transient (SET) sensitive transistors into at least two serially connected transistors, and spacing the transistors sufficiently far apart so that the probability of a specified high-energy particle striking both transistors at the same time is remote.

The invention discloses a water body metallic element real-time online detecting device. In the invention, high voltage is utilized to realize gas breakdown between a water sample to be detected and a metal anode, atmosphere pressure plasma is produced, metallic elements in the water sample enters into the plasma and are excitated to a high energy level under the action of high energy particles of the plasma and emit respective characteristic atomic spectrums in a process of transiting to a ground state from the high energy level, and selection of the metallic element characteristic atomic spectrums is realized by converting transmission wavelength of a narrow band pass filter. The types of the metallic elements in the water body are determined by analyzing wavelengths of spectrum lines, and information of element concentration can be obtained by analyzing intensity of the spectrum lines. In the invention, real-time online discriminant analysis on multiple metallic elements in the water body sample can be realized by adopting only one device, thus a detection analysis program is greatly shortened and detection efficiency and measuring accuracy are improved; and the water body metallic element real-time online detecting device disclosed by the invention is applicable to metallic ion detection of drinking water source, an industrial drain outlet and the like.

The invention relates to a device for eliminating volatile organic compounds and producing hydrogen simultaneously by utilizing non-equilibrium plasma; the device comprises a high-voltage power supply, a cylinder central electrode, an external electrode of a Laval nozzle and a tangential gas tube, etc.; breakdown arc light column is formed by utilizing potential difference among the electrodes; the arc light column rotates with high speed between the cylinder central electrode and the external electrode under the driving of the swirling eddy led in by the tangential gas tube; the arc light column is rapidly pushed to the downstream when rotating and extinguished so as to generate rotary discharging non-equilibrium plasma flow with low pressure, low-temperature expansion state and large area of glow and corona regions; the non-equilibrium plasma flow comprises numerous high energy electrons and active particles such as O, O2<->, O3, H, OH and HO2, etc.; through bombardment of high energy particles and oxidization of active particles, the C-H chain is cut so as to eliminate the organic compounds and produce the hydrogen simultaneously and avoid generation of nitrogen oxide.

A pixel for the detection of electromagnetic radiation or impinging high energy particles, in particular for detecting X-ray photons, including a radiation receptor for converting the electromagnetic radiation or impinging high energy particles into a radiation signal, a converter for converting the radiation signal into a pulse train, and an analog accumulator for accumulating the pulses of a pulse train to an analog signal for readout. The analog accumulator is adapted such that the analog signal is non-linearly proportional to the pulse count. Such non-linear analog accumulator has the advantage of an large dynamic range.

A particle therapy system for irradiating a volume of a patient to be irradiated with high-energy particles is provided. The system includes a radiation outlet of a radiation delivery and acceleration system from which a particle beam exits in order to interact with the patient positioned in an irradiation position; an imaging device for verifying the position of the volume to be irradiated in relation to the particle beam; and a patient-positioning device with which the patient can be brought into the irradiation position for irradiation. The imaging device checks the position of the volume to be irradiated in an imaging position of the patient that is spatially remote from the irradiation position, and the patient-positioning device automatically changes position between imaging position and irradiation position.

A method for treating material surface utilizing atomic hydrogen. The method includes utilizing atomic hydrogen by mixing halogen and / or halide to a gas which is used for generating, atomic hydrogen in the plasma. The present method also includes utilizing a characteristics of plasma downstream (11) in which the objective surface is prevented from physical damage caused by high energy particle and undesirable reactive species are controlled so as to avoid their influence. In an alternative embodiment, the present invention includes a method for a material surface treatment utilizing atomic hydrogen without the influence of atomic oxygen by using a gas, as a plasma source, containing the molecule and / or compound of chlorine, bromine and / or iodine and not containing molecules with oxygen atom.

The invention relates to a power source low-level all-digital amplitude phase control system for a high-energy particle accelerator and an implementation method thereof. The method comprises cooperation of signal preprocessing, digital signal processing and digital loop control. An analog circuit component of the signal preprocessing comprises six signal processing channels and one clock processing channel integrated on an analog part, wherein each signal processing channel comprises an attenuator, an amplifier and a filter; and the clock processing channel comprises an attenuator, an amplifier, a filter, a frequency multiplier and a frequency divider. A digital circuit component of the digital signal processing and the digital loop control comprises three A / D (Analog to Digital) converters for sampling six paths of signals, one D / A (Digital to Analog) converter for generating signals and one FPGA (Field Programmable Gate Array) for the digital signal processing and the digital loop control, wherein the three A / D converters, the D / A converter and the FPGA are integrated on a digital part. Through adoption of the power source low-level all-digital amplitude phase control system, the physical structural parameters of a super conduction cavity can be controlled, and high stability of the amplitude and phase of a super conduction cavity driving energy field can be kept.

The present invention refers to a radiation or high energy particles detector, which can be used in obtaining digital radiographic images. The detector is composed of two parts: a scintillator matrix (30) embedded in walls manufactured from a reflector material (10), and a matrix of image elements (pixels), where each element is constituted by a photodetector (21) and an analog to digital converter. The walls manufactured from the reflector material (10) form light guides that prevent the dispersion of the visible light produced by the scintillators (30) and the consequent interference between each pixel and its neighbors.