Luminescent material doped with niobate, tantalate and the mischcrystal thereof, and crystal growth method thereof for the melt process
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A technology for luminescent materials and crystal growth, which is applied in the direction of polycrystalline material growth, crystal growth, luminescent materials, etc., and can solve problems such as the difficulty of obtaining high-quality and large-sized crystals
Inactive Publication Date: 2009-06-03
ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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[0003] In the laser field, YVO 4 、GdVO 4 It is a high-efficiency laser substrate, and it is usually grown by the pulling method, but due to the volatilization of V during the growth process, it is difficult to obtain high-quality and large-sized crystals
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[0023] Rare earth Yb, Nd, Er, Tm, Ho, Ce, Pr, Eu doped, and non-rare earth Bi, Ti, Cr doped scandium niobate, scandium tantalate, yttrium niobate, yttrium tantalate, gadolinium niobate, Luminescent materials of gadolinium tantalate, lutetium niobate, lutetium tantalate and their mixed crystals, the molecular formula of the compound is expressed as:
[0024] (RE x RE' y ) M 1-x-y-z-δ M' z (Ta 1-u+δ′ Nb u+δ" )O 4+δ , where: RE, RE' represent rare earth Yb, Nd, Er, Tm, Ho, Ce, Pr, Eu and non-rare earth Bi, Ti, Cr, M' and M are Sc, Y, Gd, Lu, the value of x The range is 0~0.5, the value range of y is 0~0.5, and 0
[0025] Compound (RE x RE' y ) M 1-x-y-z-δ M' z (Ta 1-u+δ′ Nb u+δ" )O 4+δ The melt crystal growth method:
[0026] (1)(RE x RE' y ) M 1-x-y-z-δ M' z (Ta 1-u+δ′ Nb u+δ" )O 4+δ Ingredients for crystal growth raw materials:
[0027...
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Abstract
The invention discloses a luminescent material doped with niobate, tantalate and the mischcrystal thereof, and a crystal growth method thereof for the melt process. The molecular formula of the compound is (RExRE'y) M1-x-y-z-deltaM'z (Ta1-u+delta' Nbu+delta') O4+delta (x equals to 0 to 0.5, y equals to 0 to 0.5, 0 is smaller than x+y and x+y is smaller than and equal to 0.5, z equals to 0 to 0.5, delta equals to -0.4 to 0.4, and delta'+delta' equals to delta), wherein, the RE and the RE' are Yb, Nd, Er, Tm, Ho, Ce, Pr, Eu, Bi, Ti and Cr, and the M and the M' are Sc, Y, Gd and Lu. The well prepared raw material becomes the starting material of crystal growth after uniformly mixing, pressing molding and high temperature sintering; the starting material for crystal growth is put into a crucible and sufficiently heated and fused to form an initial melt for melt process growth, and then the melt methods can be used for crystal growth such as a Czochralski method, a Bridgman-Stockbarge method, a TGT method and other melt methods; and the (RExRE'y) M1-x-y-z-deltaM'z (Ta1-u+delta' Nbu+delta') O4+delta can be used as the detection material for the working laser material, the high-energy rays, the high-energy particle, and the like.
Description
technical field [0001] The invention relates to the field of luminescent materials and crystal growth, rare earth Yb, Nd, Er, Tm, Ho, Ce, Pr, Eu doping, and non-rare earth Bi, Ti, Cr doped scandium niobate, scandium tantalate, niobate Luminescent materials of yttrium, yttrium tantalate, gadolinium niobate, gadolinium tantalate, lutetium niobate, lutetium tantalate and mixed crystals thereof, and a crystal growth method of the melt method. Background technique [0002] Finding new laser materials and scintillator materials with excellent performance is an important topic in the fields of solid-state laser technology, nuclear physics, nuclear medicine, and laser medicine. [0003] In the laser field, YVO 4 、GdVO 4 It is a high-efficiency laser substrate, and it is usually grown by the pulling method, but due to the volatilization of V during the growth process, it is difficult to obtain high-quality and large-sized crystals. In addition, Yb, Nd, Er, Tm, Ho, Pr, Eu ions are ...
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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/78C30B29/30
Inventor 张庆礼殷绍唐孙敦陆刘文鹏丁丽华谷长江秦清海李为民
Owner ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI