Integrated melt method for crystal growth

A technique for growing crystal and melt method, applied in the field of melt growth and crystal growth

Inactive Publication Date: 2004-11-10
长治虹源科技晶体有限公司
View PDF4 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there is no growth method that combines multip

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Integrated melt method for crystal growth
  • Integrated melt method for crystal growth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Embodiment 1 grows sapphire

[0026] Use domestic single crystal furnace (such as manufactured by Xi'an University of Technology factory, with computer control, upper load cell), molybdenum crucible, medium frequency induction heating, zirconia insulation material, the specific configuration is as follows figure 1 shown.

[0027]Put 2,500 grams of sintered alumina into a Φ100mm crucible, vacuumize to 10-2Pa, and then fill with hydrogen to 0.8atm. Heat up and melt, lower the seed rod to preheat the seed crystal, the seed crystal rotates at 30rpm, let the seed crystal touch the liquid surface of the melt, pull it at 3mm / hr after heat balance; close the neck and put the shoulder. After the crystal diameter is about 15mm, gradually reduce the pulling speed and rotation speed, respectively to 1.5mm / hr and 15rpm until the crystal diameter is 30mm, further gradually reduce the pulling speed and rotation speed according to the enlargement of the crystal diameter, and stop pull...

Embodiment 2

[0033] Example 2 Growth of chromium-doped ruby

[0034] With the same steps and equipment as in Example 1, 2500 grams of alumina and 3.0 wt% chromium oxide according to the total amount were put into a molybdenum crucible for growth. The difference is that the seeding shouldering speed is gradually changed from 2.5 to 1.0mm / hr, and the rotation speed is kept at 10rpm. A ruby ​​with excellent quality is obtained, and the light extraction efficiency reaches more than 1.0%.

Embodiment 3

[0035] Example 3 Growth of titanium-doped sapphire

[0036] With the same steps and equipment as in Example 1, 2500 grams of alumina and 0.2wt% titanium oxide according to the total amount were put into a crucible for growth. The difference is that the iridium crucible and iridium crucible cover are used, the gas filled is nitrogen, the seeding shoulder speed is gradually changed from 2.5 to 1.0mm / hr, and the rotation speed is kept at 10rpm. Sapphire with excellent quality is also obtained, with low dislocation density, low scattering, high structural integrity, and optical uniformity Δn=9×10-7. The method of measuring the length of 20mm titanium sapphire crystal by double optical path and light incident on the surface of the crystal at Brewster's angle, the FOM value of the crystal is determined to be 150.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Dislocation densityaaaaaaaaaa
Transmittanceaaaaaaaaaa
Login to view more

Abstract

The invention provides a synthetic melting body method of growing crystal, using pulling method to seed, shrink neck, and extend shoulder, as the growth at equal diameter, adopting soaking method and/or temperature gradient method. It can grow large-sized high-quality crystals, especially oxide crystals like sapphire substrate crystal, doped or undoped aluminum oxide crystal, aluminate crystal, etc. It has the advantages of adopting pulling, soaking and temperature gradient methods: able to grow large-sized crystals, a little pollution, and able to observe the liquid surface and the growing situation of crystal; able to use the original pulling devices; the crystal quality is good, and has low dislocation density and good integrity and optical uniformity, easy to industrialize.

Description

technical field [0001] The invention relates to crystal growth, in particular to melt growth, in particular to a comprehensive melt growth method combined with multiple growth modes such as pulling, kyropoulos and temperature gradient. technical background [0002] At present, growing crystals from melts is the most common and important method for preparing crystals. Most of the single crystal materials required in modern technology applications such as electronics and optics are prepared by the melt growth method. For example: Si, Ge, CaAs, GaP, LiNbO3, Nd:YAG, Nd:Cr:GsGG, Al2O3 and Ti:Al2O3 crystals, etc., and some halogen compounds of alkali metals and alkaline earth metals, etc. Many crystals have already entered industrial production on various scales. [0003] There are many ways to grow crystals in the melt, such as the pulling method. First, a seed crystal is introduced into the melt to form a single crystal nucleus, and then atoms or mole...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B11/00C30B15/00C30B17/00C30B29/20C30B29/24C30B29/28
Inventor 陈迎春肖俊李明远
Owner 长治虹源科技晶体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap