65results about "Using seed in melt" patented technology

A method for growing a periodically-poled nonlinear crystal may include placing a seed crystal into a melt to form a seed crystal melt mixture, where the seed crystal may include at least one of strontium tetraborate (SBO) or lithium triborate (LBO), and where the melt includes at least one of a mixture of Sr, B, and O or a mixture of Li, B, and O. The method may further include heating the seed crystal melt mixture to a predetermined temperature until the periodically-poled nonlinear crystal forms.

GaAs IR window slabs having largest dimensions that are greater than 8 inches, and preferably greater than 12 inches, are grown using the Horizontal Gradient Freeze (HGF) method. Heat extraction is simplified by using a shallow horizontal boat that is only slightly deeper than the desired window thickness, thereby enabling growth of large slabs while also minimizing material waste and fabrication cost as compared to slicing and shaping thick plates from large, melt-grown boules. Single crystal seeds can be used to optimize the final orientation of the slabs and minimize secondary nucleation, thereby maximizing yield. A conductive doped GaAs layer can be applied to the IR window slab to provide EMI shielding. The temperature gradient during HGF can be between 1° C. / cm and 3° C. / cm, and the directional solidification can be at a rate of between 0.25 mm / h and 2.5 mm / h.

The invention belongs to the technical field of multi-component crystal preparation, and discloses a crystal growth method and a crystal growth device, multi-component crystals are grown by using a pure melt kyropoulos method, and the multi-component crystals are binary and more oxides. The crystal growth device comprises a hearth, a bearing seat, a crucible, a seed rod, a gas outlet pipe, a gas inlet pipe and three groups of annular heating assemblies, the hearth comprises a furnace body and a furnace cover, the furnace cover seals an opening in the top of the furnace body, and a heating area defined by a thermal insulation material is arranged in the furnace body; the bearing seat and the crucible are arranged in the heating area; the seed rod extends into the crucible; the three groups of annular heating assemblies are arranged on the inner wall of the heating area, the three groups of heating assemblies are respectively an upper heating assembly, a middle heating assembly and a lower heating assembly which are arranged at intervals from top to bottom, and the crucible is positioned in a middle-temperature area surrounded by the middle heating assembly. According to the invention, the polycrystal phenomenon and internal defects can be avoided, the multi-component crystal with larger size and high quality can be grown, and the production and manufacturing cost can be reduced.

The utility model provides a supporting device and sapphire crystal growth equipment. The supporting device comprises a supporting structure and a first isolation structure, and the supporting structure is made of a graphite material and is provided with a first supporting surface; the first isolation structure is made of inert materials and arranged on the first supporting face, and the surface, away from the first supporting face, of the first isolation structure is a second supporting face. The supporting structure supports the first isolation structure and the crucible on the first isolation structure, and the supporting structure is made of graphite materials, so that the supporting structure is low in melting point and small in density, and the probability of deformation of the supporting structure in a high-temperature environment can be reduced due to the characteristic of the low melting point; furthermore, the crucible and the crystal in the crucible can be well supported, and the probability that the manufacturing process is abnormal is reduced; due to the characteristic of small density, the weight of the supporting structure can be reduced under the condition that the supporting structure has the same size as a supporting structure in the prior art, and more labor and time are saved during installation and maintenance of the supporting structure.

The utility model discloses a tungsten-copper alloy heater for sapphire crystal growth, and relates to the technical field of sapphire crystal growth equipment. The heating device comprises a mounting seat, a supporting frame is fixedly connected to the bottom of the mounting seat, a heating rod is arranged at the bottom of the mounting seat, a tungsten-copper alloy electrode is arranged at the top of the mounting seat, a clamping device is arranged at the top of the mounting seat, the clamping device comprises a sliding groove, the sliding groove is formed in the top of the mounting seat, and the tungsten-copper alloy electrode is arranged in the sliding groove. The inner wall of the sliding groove is fixedly connected with a mounting block. The birdcage heater made of the tungsten copper alloy is not prone to deformation, meanwhile, a good temperature gradient and a uniform and stable temperature field are provided for sapphire crystal growth, stable crystal growth is achieved, meanwhile, the service life of the heater is prolonged, equipment damage caused by improper operation can be reduced, and the service life of the heater is prolonged. And the maintenance cost caused by frequent misoperation is reduced.

The invention relates to the technical field of sapphire crystal growth, and discloses a high-temperature measuring device for a crystal growth furnace, which comprises a base, an outer furnace body is arranged on the upper end surface of the base, a bracket is arranged at the upper end part of a connecting arm, a high-precision servo motor is arranged on the bracket, a material pulling channel is connected between the bracket and a sealing plate, and the material pulling channel is communicated with the outer furnace body. An inner furnace body is arranged in the outer furnace body, an inert gas cavity is formed in the inner furnace body, a high-frequency inductance heating frame is arranged in the middle of the bottom of the inert gas cavity, and a quartz crucible is arranged at the upper end of the high-frequency inductance heating frame. The movement attribute of the extension inner pipe is fully utilized, the cooling cavity is filled with the cooling medium, when the extension inner pipe extends into the gap between the inner furnace body and the outer furnace body, the cooling medium is liquefied to release heat, and when the extension inner pipe is located in the inner furnace body, the cooling medium is vaporized to release heat, so that heat in the movable measuring seat is absorbed, and the purpose of cooling is achieved; and circulating cooling is realized.

The invention discloses a growth method for preparing a high-strength sapphire crystal through a kyropoulos method, and belongs to the technical field of artificial crystal growth. The mechanical strength and damage resistance of the sapphire single crystal are remarkably improved by optimizing the kyropoulos growth process. The invention particularly relates to a technology for obtaining a sapphire crystal with high bending strength, high fracture toughness and excellent thermal shock resistance by regulating and controlling thermal field distribution, an interface stress state and a defect evolution behavior in a growth process.

To provide an apparatus for manufacturing oxide single crystals, a method for manufacturing gallium oxide single crystals using the apparatus, and a gallium oxide single crystal manufactured thereby. [Solution] By applying a method that uses the oxide pellet itself, which is to be made into a single crystal, as the crucible without using a separate crucible, the problem of impurities entering due to the crucible is minimized. Furthermore, by applying a method that mixes hydrocarbon fuel gas and oxygen gas and generates heat using a flame, the growth atmosphere for the oxide single crystal can be maintained in a high-oxygen atmosphere, enabling the production of high-quality oxide single crystals with few defects.

The invention relates to a sapphire single crystal (4) and a method and apparatus (1) for producing it, wherein the sapphire single crystal (4) comprises a plurality of layers (11) arranged in a C-axis (7), wherein each layer (11) has a cross-sectional topography (12), wherein the cross-sectional topographies (12) of the layers (11) repeat with respect to geometric patterns (13) formed in the cross-sectional topographies (12), wherein the geometric patterns (13) are predominantly composed of polygonal rings, in particular of concentric hexagonal or concentric hexagonal rings.

This invention discloses a barium borate crystal, its preparation method, and its applications. The barium borate crystal has the chemical formula Ba₂BeB₂O₆, a non-centrosymmetric structure, belongs to the orthorhombic crystal system, has the space group Pca₂₁, and its cell parameters are α = 90°, β = 90°, and γ = 90°. This barium borate crystal exhibits extremely low birefringence from the ultraviolet to the infrared band, and its extremely low birefringence supports its application on zero-order glass slides.

A method for growing a periodically poled nonlinear crystal may comprise introducing a seed crystal into a melt to form a seed-melt mixture, wherein the seed crystal may comprise strontium tetraborate (SBO) and / or lithium triborate (LBO), and wherein the melt comprises a mixture of Sr, B, and O and / or a mixture of Li, B, and O. The method may further comprise heating the seed-melt mixture to a predetermined temperature until the periodically poled nonlinear crystal forms.

To provide a garnet-structured aluminate scintillating material doped with a transition metal element having an ionic radius and electronegativity similar to Al3+, and an outer electron configuration of [Ar]3dn4s1-2 (n≥5), as well as a preparation method and application thereof.SOLUTION: The chemical formula of the transition metal element doped garnet-structured aluminate scintillating material is RE3-x-aCexAaAl5-y-zDyMzO12, wherein x is 0<x≤0.15, y is 0≤y≤3, z is 0<z≤0.1, and a is 0≤a≤0.1; the rare earth element RE is at least one selected from Gd, Lu, Y, Sc, La, Nd, Eu, Tb, Dy, Ho, Er, Tm, and Yb, the A is at least one selected from Li, Mg, Ca, K, and Na, the D is at least one selected from Ga and In, and the M is a transition metal element, which is at least one selected from Cr, Mn, Fe, Co, and Ni.SELECTED DRAWING: Figure 1

The invention belongs to the technical field of crystal growth, and discloses a temperature control method and system for a large-size crystal growth furnace, and the method comprises the steps: setting system time, melting point temperature, moving step length, waiting time, a preset distance between an upper temperature measurement point and a lower temperature measurement point, an initial position and an end position; collecting the temperature of an upper temperature measuring point and the temperature of a lower temperature measuring point in each preset unit time; based on the temperature of the upper temperature measuring point and the temperature of the lower temperature measuring point, calculating the temperature difference of each preset unit time, and calculating the gradient of each preset unit time; generating an alarm signal according to a preset gradient interval based on the gradient of each preset unit time, and if the alarm signal is not generated, regulating and controlling the temperature by using a temperature controller based on the temperature difference of each preset unit time, and eliminating the temperature difference between the temperature of the upper temperature measurement point and the temperature of the melting point; according to the invention, the traditional temperature control logic is broken through, and accurate regulation and control and efficient and safe management of the crystal growth process are realized.

The present invention belongs to the technical field of sapphire crystal growth, and specifically relates to a method for controlling impurities in sapphire crystal growth and a crucible for crystal growth. A method for controlling impurities in sapphire crystal growth, comprising the following steps: removing impurities from the crucible, spraying an aluminum oxide solution on the inner wall of a molybdenum crucible, placing the crucible in a crystal growth furnace, and starting to heat up and sinter after the furnace body is sealed and cool down; growing crystals, filling aluminum oxide raw material powder into the treated crucible, and starting to heat up and melt the raw material after the furnace body is sealed, and seeding and crystal growth are performed after the raw material is melted, and after the crystal growth is completed, the crystal is cooled and taken out. The present invention mainly utilizes the reaction design and control of aluminum oxide at different temperatures, and obtains a crucible for crystal growth through a crucible removal operation, so as to avoid the introduction of impurity elements in the new crucible into the sapphire crystal growth process, thereby controlling the impurities of the sapphire crystal growth and improving the quality and consistency of the crystal growth.

The utility model belongs to the technical field of crystal preparation, and discloses a Kyropoulos method crystal growth device which comprises a hearth, and a heating area is arranged in the hearth; the bearing seat and the crucible are arranged in the heating area; the seed rod extends into the crucible; at least two groups of annular heating assemblies are arranged on the inner wall of the heating area, the at least two groups of heating assemblies are mutually independent and adjacently arranged in the vertical direction, and each group of heating assemblies is provided with a temperature control thermocouple; when the number of the heating assemblies is two, the two heating assemblies are the upper heating assembly and the lower heating assembly respectively, and the crucible is located in the area surrounded by the lower heating assembly. When the number of the heating assemblies is three, the three heating assemblies are the upper heating assembly, the middle heating assembly and the lower heating assembly respectively, and the crucible is located in the area surrounded by the middle heating assembly. The kyropoulos method crystal growing device can avoid polycrystals and internal defects, and can grow crystals with larger sizes.

The present invention provides a lead barium boron nitrogen oxide compound and a lead barium boron nitrogen oxide nonlinear optical crystal as well as a preparation method and use thereof. The chemical formula of the compound is Pb2Ba3(BO3)3(NO3), the molecular weight is 1039.98, and the compound is prepared by a solid phase synthesis method or a vacuum packaging method. The chemical formula of the crystal compound is Pb2Ba3(BO3)3(NO3), the molecular weight is 1039.98, and the crystal belongs to the orthorhombic system with a space group of C 2221, the unit cell parameters are a =10.4818(5)Å, b =14.4102(7)Å, c =8.0332(4)Å, α= 90°, β= 90°, c= 90°, the unit cell volume is 1213.37(10)Å 3 The frequency doubling effect of the crystal is about 3.2 times that of KH2PO4 (KDP), and the ultraviolet cutoff edge is about 320 nm. The crystal is grown by melt method, high-temperature melt method, or vacuum packaging method. The crystal has good chemical stability and can be used as a short-wavelength ultraviolet nonlinear optical crystal in all-solid-state lasers.

The invention relates to a fluorine-doped cesium zinc chloride scintillator single crystal and a preparation method and application thereof. The chemical formula of the fluorine-doped cesium zinc chloride scintillator single crystal is Cs2ZnCl4: xF, wherein the element F is F <->; wherein x represents the atomic ratio of doping elements, and x is less than or equal to 50at%.

In one embodiment, there is provided an apparatus for growing a silicon (Si) single crystal ingot, the apparatus comprising: a chamber; a crucible which is provided in the chamber and accommodates a Si melt; the heating unit is arranged on the periphery and / or the lower part of the crucible; a first water-cooled tube fixed to an upper portion in the chamber and provided on the periphery of a Si single crystal ingot grown and raised from the Si melt; a heat insulating member provided in an adjacent region of the crucible; a thermal barrier disposed on the crucible and an upper portion of the thermal insulation member; a lifting member for lifting the thermal barrier; a second water-cooled tube connected to the lifting member to be lifted up and down, and provided on the thermal barrier; and a current measuring unit for measuring a current between the lifting member and the heat insulating member.

A method for growing a periodically polarized nonlinear crystal may include placing a seed crystal in a melt to form a seed crystal melt mixture, the seed crystal comprising at least one of strontium tetraborate (SBO) or lithium triborate (LBO), and the melt comprising at least one of a mixture of Sr, B, and O or a mixture of Li, B, and O. The method may further include heating the seed crystal melt mixture to a predetermined temperature until a periodically polarized nonlinear crystal is formed.

The present invention relates to a preparation method and use of a lithium niobium telluride compound and a nonlinear optical crystal thereof, wherein the chemical formula of the lithium niobium telluride compound is LiNbTeO5. Specifically, the lithium niobium telluride compound is a polycrystalline powder or a nonlinear optical crystal, and the lithium niobium telluride nonlinear optical crystal has a wide transmission range, a strong frequency doubling effect, a high laser damage threshold, stable physical and chemical properties, is not easy to deliquesce, and is easy to cut, polish and store.

Disclosed herein is a rare earth oxyorthosilicate crystal having a formula (1): Lu2(1-a-b-c-d)A2aB2bC2c D2dSi(1-x+y)EyO5(1-z), wherein Lu is lutetium; A comprises a trivalent ionic substitution selected from La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Sc, Y, Al, Ga, B, In, Bi, Sb, Au, Rh, or a combination thereof; B comprises a non-trivalent ionic substitution selected from Mg, Ca, Sr, Ba, Li, Na, K, Rb, Mn, Cu, Zn, or a combination thereof; C comprises an activating cation substitution selected from Ce3+, Ce4+, Pr3+, or a combination thereof; D comprises a monovalent halogen anion substitution selected from F, Cl, Br, or a combination thereof; E comprises a trivalent ion substitution selected from La, Sc, Y, Al, Ga, In, B, In, Bi, Sb, Au, Rh, or any combination of thereof.

The application discloses a crystal growth furnace and a seed crystal replacement process, relates to the technical field of crystal growth, and has the technical scheme that the crystal growth furnace comprises an isolation bin, a furnace body, a crystal supply assembly, the crystal supply assembly comprises a receiving cylinder, seed crystals are stacked in the receiving cylinder, a push plate is arranged in the receiving cylinder, a pushing mechanism is arranged on one side of the push plate, a driving assembly is arranged, the driving assembly comprises a driving sleeve, a plurality of extension frames are fixedly arranged on the driving sleeve, a clamping mechanism is arranged on one side of the extension frame, and the driving assembly further comprises a power mechanism; a heat insulation mechanism is arranged and is used for preventing heat from being lost to the isolation bin through the feeding pipe; and a discharging mechanism is arranged and is used for discharging the waste seed crystals. According to the technical scheme, the receiving cylinder and the pushing mechanism are arranged, the seed crystals can be received and placed in a space-saving vertical stacking mode, the seed crystals are pushed upward through the push plate, the damage probability of the seed crystals is greatly reduced, and the integrity of the seed crystals is guaranteed.

The present invention relates to an apparatus for preparing an oxide single crystal, a method for preparing a gallium oxide single crystal using the same, and a gallium oxide single crystal prepared according to the method, and more particularly, to an apparatus for preparing a single crystal and a method for preparing a gallium oxide single crystal using the same, according to the present invention, a method in which oxide particles for producing a single crystal are used as a melting furnace instead of oxide particles per se for producing a single crystal is used as the melting furnace, thereby minimizing the problem of impurity inflow through the melting furnace, and the growth atmosphere of the oxide single crystal is maintained at a high oxygen atmosphere by using a method in which a hydrocarbon fuel gas and oxygen are mixed and heat is released by spark. Therefore, the high-quality oxide single crystal can be prepared.

The invention provides a method for growing a gallium oxide single crystal by a kyropoulos method, which comprises the following steps of: S01, charging: charging a gallium oxide raw material with the weight of M1 and the purity of 5N into a crucible, and putting the crucible filled with the raw material into a single crystal growth furnace; a plurality of heat preservation screens are arranged above the crucible at intervals; a seed crystal with [010] crystal orientation is arranged at the top end, and a single crystal growth furnace door is closed; s02, heating and melting: heating and preserving heat until the gallium oxide raw material is completely melted; s03, seeding and growing; and S04, cooling and crystal taking: after the growth is completed, cooling the crystal to room temperature, and taking out the crystal. According to the method for growing the gallium oxide single crystal through the kyropoulos method, after the heat preservation screen is arranged, the flowing speed of raw material volatile gas can be blocked, the axial temperature gradient of a thermal field can be reduced and stabilized, and the growth quality of the gallium oxide crystal through the kyropoulos method can be better optimized.

The utility model provides a crystal furnace and a sapphire substrate production system. The crystal furnace comprises a furnace body, a heat preservation screen assembly, a supporting piece and a sheath. The heat preservation screen assembly is arranged on the bottom wall in the furnace body. The supporting piece is arranged in the heat preservation screen assembly in the furnace body in a penetrating mode in the height direction of the furnace body, the first end of the supporting piece abuts against the bottom wall of the furnace body, and the second end of the supporting piece penetrates out of the heat preservation screen assembly to form a bearing end. The sheath and the supporting piece are coaxially arranged between the heat preservation screen assembly and the supporting piece, the heat conductivity coefficient of the sheath is smaller than that of the heat preservation screen assembly and that of the supporting piece, and the melting point of the sheath is higher than the working temperature of the furnace body.

The invention discloses a crystal growth furnace and a seed crystal replacement process, and relates to the technical field of crystal growth, the technical scheme is that the crystal growth furnace comprises an isolation bin, a furnace body and a crystal supply assembly, the crystal supply assembly comprises a storage cylinder, seed crystals are stacked in the storage cylinder, a push plate is arranged in the storage cylinder, a push mechanism and a driving assembly are installed on one side of the push plate, and the driving assembly comprises a driving sleeve; a plurality of extending frames are fixedly mounted on the driving sleeve, a clamping mechanism is mounted on one side of each extending frame, and the driving assembly further comprises a power mechanism; the heat insulation mechanism is used for preventing heat from being dissipated into the insulation bin through the feeding pipe; and the unloading mechanism is used for unloading the waste seed crystals. According to the technical scheme, by arranging the storage barrel and the pushing mechanism, the seed crystals can be stored in a space-saving vertical stacking mode, meanwhile, the seed crystals are pushed upwards through the pushing plate, the damage probability of the seed crystals is greatly reduced, and the completeness of the seed crystals is guaranteed.

A sapphire crystal growing furnace belongs to the technical field of sapphire crystal processing and comprises a furnace body, a cover body, a heating mechanism, a crucible dismounting mechanism and a crucible, the furnace body and the cover body are detachably arranged, the heating mechanism is arranged on the cover body and fixedly connected with the cover body, the lower portion of the heating mechanism extends into the furnace body, and the heating mechanism is configured to be capable of lifting and rotating in the furnace body. The crucible dismounting mechanism is arranged on the furnace body, the crucible dismounting mechanism serves as a clamping tool of the crucible and is used for mounting and dismounting the crucible relative to the furnace body, and an exhaust pipe and an air inlet pipe are arranged on the furnace body. According to the sapphire crystal growing furnace provided by the invention, automatic adjustment of a thermal field is realized through cooperation of the rotating assembly and the height adjusting assembly, the heating uniformity of the crucible is improved, and the requirements of sapphire crystals on the longitudinal position of the thermal field in different growth stages are met; and meanwhile, through the arrangement of the crucible dismounting mechanism, the crucible can be conveniently mounted and dismounted, and sapphire crystals growing in the crucible can be conveniently taken out.

The present invention belongs to the technical field of crystal growth, and particularly relates to a method for growing large-size titanium-doped sapphire crystals by the Kyropoulos method. The method includes steps of raw material preparation and loading, heating up to melt the material, temperature adjustment and seeding, crystal growth, in-situ annealing during crystal cooling, and wafer H2 annealing. The present invention uses high-purity graphite materials to construct the thermal field, reducing thermal field pollution, precisely controlling the temperature distribution through a double heating body, and forming a stable temperature gradient field; during heating, a mixed gas of Ar and CO is introduced as a protective gas to inhibit adverse reactions in the furnace and maintain the stable existence of Ti 3+ ions in the melt; during the crystal growth process by the Kyropoulos method, it does not contact the crucible, reducing stress concentration, improving crystal uniformity, and realizing an efficient growth method for large-size, high-quality, and low-defect titanium-doped sapphire crystals, meeting the manufacturing requirements of high-end lasers and optical devices.

To obtain a sapphire single crystal having less defects and easily machined.SOLUTION: In a method for manufacturing a sapphire single crystal, a single crystal sapphire seed crystal 1 has a rhombohedral system crystal structure defining three crystal axes [A], [C] and [M] perpendicular to each other and perpendicular to crystal planes A(11-20), C(0001) and M(10-10), respectively; the single crystal sapphire seed crystal 1 is a plate 2 having a boundary formed of two flat surfaces 4 parallel to each other and separately extended; and the single crystal sapphire plate 2 is obtained by cutting the initial sapphire single crystal so that any of the crystal axis [A], [C] or [M] of the single crystal sapphire plate 2 forms the normal D1 of the flat surface 4 of the single crystal sapphire plate 2 and an angle (α) of 5-85°.SELECTED DRAWING: Figure 1

The utility model relates to an isolation sand paving auxiliary piece and an isolation sand paving assembly, the isolation sand paving auxiliary piece is used for being matched with a scraping plate to flatly pave isolation sand on a crucible tray of a sapphire single crystal furnace, and the isolation sand paving auxiliary piece comprises a positioning part, a through hole and a collecting part; the positioning part is used for being placed on a crucible tray, the positioning part is provided with a first surface and a second surface which are opposite in the vertical direction, the first surface and the second surface are both planes parallel to the horizontal plane, and the second surface is used for making contact with the top face of the crucible tray; the through hole is formed in the positioning part and penetrates through the first surface and the second surface in the vertical direction, the hole diameter of the through hole is set to be smaller than the diameter of the crucible tray, the through hole is used for allowing isolation sand to pass through so that the isolation sand can be laid on the top face of the crucible tray, and the first surface is used for making contact with the scraper blade in the process that the scraper blade scrapes the isolation sand; the collecting part is connected to the positioning part and provided with a collecting groove, and the collecting groove is located outside the through hole and is constructed to be capable of collecting falling isolation sand in the process that the isolation sand is scraped by the scraper.