31results about "Using seed in melt" patented technology

The utility model discloses a tungsten-copper alloy heater for sapphire crystal growth, and relates to the technical field of sapphire crystal growth equipment. The heating device comprises a mounting seat, a supporting frame is fixedly connected to the bottom of the mounting seat, a heating rod is arranged at the bottom of the mounting seat, a tungsten-copper alloy electrode is arranged at the top of the mounting seat, a clamping device is arranged at the top of the mounting seat, the clamping device comprises a sliding groove, the sliding groove is formed in the top of the mounting seat, and the tungsten-copper alloy electrode is arranged in the sliding groove. The inner wall of the sliding groove is fixedly connected with a mounting block. The birdcage heater made of the tungsten copper alloy is not prone to deformation, meanwhile, a good temperature gradient and a uniform and stable temperature field are provided for sapphire crystal growth, stable crystal growth is achieved, meanwhile, the service life of the heater is prolonged, equipment damage caused by improper operation can be reduced, and the service life of the heater is prolonged. And the maintenance cost caused by frequent misoperation is reduced.

The invention relates to the technical field of sapphire crystal growth, and discloses a high-temperature measuring device for a crystal growth furnace, which comprises a base, an outer furnace body is arranged on the upper end surface of the base, a bracket is arranged at the upper end part of a connecting arm, a high-precision servo motor is arranged on the bracket, a material pulling channel is connected between the bracket and a sealing plate, and the material pulling channel is communicated with the outer furnace body. An inner furnace body is arranged in the outer furnace body, an inert gas cavity is formed in the inner furnace body, a high-frequency inductance heating frame is arranged in the middle of the bottom of the inert gas cavity, and a quartz crucible is arranged at the upper end of the high-frequency inductance heating frame. The movement attribute of the extension inner pipe is fully utilized, the cooling cavity is filled with the cooling medium, when the extension inner pipe extends into the gap between the inner furnace body and the outer furnace body, the cooling medium is liquefied to release heat, and when the extension inner pipe is located in the inner furnace body, the cooling medium is vaporized to release heat, so that heat in the movable measuring seat is absorbed, and the purpose of cooling is achieved; and circulating cooling is realized.

The invention discloses a growth method for preparing a high-strength sapphire crystal through a kyropoulos method, and belongs to the technical field of artificial crystal growth. The mechanical strength and damage resistance of the sapphire single crystal are remarkably improved by optimizing the kyropoulos growth process. The invention particularly relates to a technology for obtaining a sapphire crystal with high bending strength, high fracture toughness and excellent thermal shock resistance by regulating and controlling thermal field distribution, an interface stress state and a defect evolution behavior in a growth process.

To provide an apparatus for manufacturing oxide single crystals, a method for manufacturing gallium oxide single crystals using the apparatus, and a gallium oxide single crystal manufactured thereby. [Solution] By applying a method that uses the oxide pellet itself, which is to be made into a single crystal, as the crucible without using a separate crucible, the problem of impurities entering due to the crucible is minimized. Furthermore, by applying a method that mixes hydrocarbon fuel gas and oxygen gas and generates heat using a flame, the growth atmosphere for the oxide single crystal can be maintained in a high-oxygen atmosphere, enabling the production of high-quality oxide single crystals with few defects.

The invention relates to a sapphire single crystal (4) and a method and apparatus (1) for producing it, wherein the sapphire single crystal (4) comprises a plurality of layers (11) arranged in a C-axis (7), wherein each layer (11) has a cross-sectional topography (12), wherein the cross-sectional topographies (12) of the layers (11) repeat with respect to geometric patterns (13) formed in the cross-sectional topographies (12), wherein the geometric patterns (13) are predominantly composed of polygonal rings, in particular of concentric hexagonal or concentric hexagonal rings.

This invention discloses a barium borate crystal, its preparation method, and its applications. The barium borate crystal has the chemical formula Ba₂BeB₂O₆, a non-centrosymmetric structure, belongs to the orthorhombic crystal system, has the space group Pca₂₁, and its cell parameters are α = 90°, β = 90°, and γ = 90°. This barium borate crystal exhibits extremely low birefringence from the ultraviolet to the infrared band, and its extremely low birefringence supports its application on zero-order glass slides.

A method for growing a periodically poled nonlinear crystal may comprise introducing a seed crystal into a melt to form a seed-melt mixture, wherein the seed crystal may comprise strontium tetraborate (SBO) and / or lithium triborate (LBO), and wherein the melt comprises a mixture of Sr, B, and O and / or a mixture of Li, B, and O. The method may further comprise heating the seed-melt mixture to a predetermined temperature until the periodically poled nonlinear crystal forms.

To provide a garnet-structured aluminate scintillating material doped with a transition metal element having an ionic radius and electronegativity similar to Al3+, and an outer electron configuration of [Ar]3dn4s1-2 (n≥5), as well as a preparation method and application thereof.SOLUTION: The chemical formula of the transition metal element doped garnet-structured aluminate scintillating material is RE3-x-aCexAaAl5-y-zDyMzO12, wherein x is 0<x≤0.15, y is 0≤y≤3, z is 0<z≤0.1, and a is 0≤a≤0.1; the rare earth element RE is at least one selected from Gd, Lu, Y, Sc, La, Nd, Eu, Tb, Dy, Ho, Er, Tm, and Yb, the A is at least one selected from Li, Mg, Ca, K, and Na, the D is at least one selected from Ga and In, and the M is a transition metal element, which is at least one selected from Cr, Mn, Fe, Co, and Ni.SELECTED DRAWING: Figure 1

The present invention provides a lead barium boron nitrogen oxide compound and a lead barium boron nitrogen oxide nonlinear optical crystal as well as a preparation method and use thereof. The chemical formula of the compound is Pb2Ba3(BO3)3(NO3), the molecular weight is 1039.98, and the compound is prepared by a solid phase synthesis method or a vacuum packaging method. The chemical formula of the crystal compound is Pb2Ba3(BO3)3(NO3), the molecular weight is 1039.98, and the crystal belongs to the orthorhombic system with a space group of C 2221, the unit cell parameters are a =10.4818(5)Å, b =14.4102(7)Å, c =8.0332(4)Å, α= 90°, β= 90°, c= 90°, the unit cell volume is 1213.37(10)Å 3 The frequency doubling effect of the crystal is about 3.2 times that of KH2PO4 (KDP), and the ultraviolet cutoff edge is about 320 nm. The crystal is grown by melt method, high-temperature melt method, or vacuum packaging method. The crystal has good chemical stability and can be used as a short-wavelength ultraviolet nonlinear optical crystal in all-solid-state lasers.

In one embodiment, there is provided an apparatus for growing a silicon (Si) single crystal ingot, the apparatus comprising: a chamber; a crucible which is provided in the chamber and accommodates a Si melt; the heating unit is arranged on the periphery and / or the lower part of the crucible; a first water-cooled tube fixed to an upper portion in the chamber and provided on the periphery of a Si single crystal ingot grown and raised from the Si melt; a heat insulating member provided in an adjacent region of the crucible; a thermal barrier disposed on the crucible and an upper portion of the thermal insulation member; a lifting member for lifting the thermal barrier; a second water-cooled tube connected to the lifting member to be lifted up and down, and provided on the thermal barrier; and a current measuring unit for measuring a current between the lifting member and the heat insulating member.

A method for growing a periodically polarized nonlinear crystal may include placing a seed crystal in a melt to form a seed crystal melt mixture, the seed crystal comprising at least one of strontium tetraborate (SBO) or lithium triborate (LBO), and the melt comprising at least one of a mixture of Sr, B, and O or a mixture of Li, B, and O. The method may further include heating the seed crystal melt mixture to a predetermined temperature until a periodically polarized nonlinear crystal is formed.

Disclosed herein is a rare earth oxyorthosilicate crystal having a formula (1): Lu2(1-a-b-c-d)A2aB2bC2c D2dSi(1-x+y)EyO5(1-z), wherein Lu is lutetium; A comprises a trivalent ionic substitution selected from La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Sc, Y, Al, Ga, B, In, Bi, Sb, Au, Rh, or a combination thereof; B comprises a non-trivalent ionic substitution selected from Mg, Ca, Sr, Ba, Li, Na, K, Rb, Mn, Cu, Zn, or a combination thereof; C comprises an activating cation substitution selected from Ce3+, Ce4+, Pr3+, or a combination thereof; D comprises a monovalent halogen anion substitution selected from F, Cl, Br, or a combination thereof; E comprises a trivalent ion substitution selected from La, Sc, Y, Al, Ga, In, B, In, Bi, Sb, Au, Rh, or any combination of thereof.

The application discloses a crystal growth furnace and a seed crystal replacement process, relates to the technical field of crystal growth, and has the technical scheme that the crystal growth furnace comprises an isolation bin, a furnace body, a crystal supply assembly, the crystal supply assembly comprises a receiving cylinder, seed crystals are stacked in the receiving cylinder, a push plate is arranged in the receiving cylinder, a pushing mechanism is arranged on one side of the push plate, a driving assembly is arranged, the driving assembly comprises a driving sleeve, a plurality of extension frames are fixedly arranged on the driving sleeve, a clamping mechanism is arranged on one side of the extension frame, and the driving assembly further comprises a power mechanism; a heat insulation mechanism is arranged and is used for preventing heat from being lost to the isolation bin through the feeding pipe; and a discharging mechanism is arranged and is used for discharging the waste seed crystals. According to the technical scheme, the receiving cylinder and the pushing mechanism are arranged, the seed crystals can be received and placed in a space-saving vertical stacking mode, the seed crystals are pushed upward through the push plate, the damage probability of the seed crystals is greatly reduced, and the integrity of the seed crystals is guaranteed.

The present invention relates to an apparatus for preparing an oxide single crystal, a method for preparing a gallium oxide single crystal using the same, and a gallium oxide single crystal prepared according to the method, and more particularly, to an apparatus for preparing a single crystal and a method for preparing a gallium oxide single crystal using the same, according to the present invention, a method in which oxide particles for producing a single crystal are used as a melting furnace instead of oxide particles per se for producing a single crystal is used as the melting furnace, thereby minimizing the problem of impurity inflow through the melting furnace, and the growth atmosphere of the oxide single crystal is maintained at a high oxygen atmosphere by using a method in which a hydrocarbon fuel gas and oxygen are mixed and heat is released by spark. Therefore, the high-quality oxide single crystal can be prepared.

To obtain a sapphire single crystal having less defects and easily machined.SOLUTION: In a method for manufacturing a sapphire single crystal, a single crystal sapphire seed crystal 1 has a rhombohedral system crystal structure defining three crystal axes [A], [C] and [M] perpendicular to each other and perpendicular to crystal planes A(11-20), C(0001) and M(10-10), respectively; the single crystal sapphire seed crystal 1 is a plate 2 having a boundary formed of two flat surfaces 4 parallel to each other and separately extended; and the single crystal sapphire plate 2 is obtained by cutting the initial sapphire single crystal so that any of the crystal axis [A], [C] or [M] of the single crystal sapphire plate 2 forms the normal D1 of the flat surface 4 of the single crystal sapphire plate 2 and an angle (α) of 5-85°.SELECTED DRAWING: Figure 1

This invention belongs to the field of crystal material preparation technology and discloses a method for growing large-size, high-purity PMN single crystals using a top-seeded crystal growth method. It employs a gradient molten salt single crystal furnace equipped with a hollow oxygen-bearing seed crystal rod and a bidirectional rotation mechanism. The seed crystal rod and crucible rotate in opposite directions. By optimizing the composite flux ratio and identifying the drawbacks of excessively high / low ratios, adopting an extremely low cooling rate adapted to the temperature sensitivity of PMN, and designing a staged speed control strategy that precisely correlates crystal outline size with rotation speed, combined with temperature field optimization due to the opposite rotation of the seed crystal and crucible, and nucleation control through oxygen-bearing at the seed crystal to create a cold end, the crystal outline size is observed at high temperature, and process parameters are adjusted in real time to achieve high-purity growth of large-size PMN single crystals. The final obtained PMN single crystals are verified by XRD, scanning electron microscopy, EDS energy dispersive spectroscopy, and dielectric temperature spectroscopy to be free of impurities and have a pure crystal form. The single crystal size breaks through the large-size level and has good formability, meeting the application requirements of devices in the fields of electronics, piezoelectrics, and optics.

The invention provides a compound lithium barium boron oxygen fluorine nitro and a lithium barium boron oxygen fluorine nitro nonlinear optical crystal and a preparation method and application thereof, the chemical formula of the compound is LiBa3B9O16FNO3, the molecular weight is 853.27, and the compound is prepared by adopting a solid-phase synthesis method; the chemical formula of the compound of the crystal is LiBa3B9O16FNO3, the molecular weight is 853.27, the compound belongs to a trigonal system, the space group is P31c, the cell parameters are as follows: a = 10.1393 (7), b = 10.1393 (7), c = 8.6977 (8), alpha = 90 degrees, beta = 90 degrees, gamma = 120 degrees, the unit cell volume is 774.37 (13) 3, the frequency-doubled effect of the crystal is about 1-3 times that of KH2PO4 (KDP), the ultraviolet cut-off edge is about 208 nm, the crystal is grown by adopting a melt method, a high-temperature melt method or a vacuum packaging method, the chemical stability of the crystal is good, and the crystal is suitable for industrial production. The crystal can be used as a short-wavelength ultraviolet nonlinear optical crystal in an all-solid-state laser.

The present disclosure relates to an apparatus for producing an oxide single crystal, a method of producing a gallium oxide single crystal using the same, and a gallium oxide single crystal produced thereby. More specifically, the present disclosure relates to an apparatus for producing a single crystal and a method for producing a gallium oxide single crystal using the same, which may minimize the problem of impurities being introduced by a crucible, by applying a method of using the oxide pellets themselves, which are to be made into a single crystal, as a crucible without using a separate crucible, and maintain the growth atmosphere of the oxide single crystal at a high-oxygen atmosphere by applying a method of generating heat using a flame consisting of a mixture of a hydrocarbon fuel gas and oxygen gas, thereby producing a high-quality oxide single crystal with few defects.

The utility model discloses a heater for crystal growth, which comprises a base, a heating box is arranged on one side of the top end of the base, a box cover is arranged above the heating box, a heat insulation plate is arranged at the bottom end in the heating box, side seat bodies are arranged on the inner walls of the two sides of the heating box above the heat insulation plate, and rotary driving pieces are arranged on the inner walls of the lower ends of the side seat bodies through supports. The top end of the rotary driving piece penetrates through the heat insulation plate and is provided with a lead screw, limiting rails are arranged on the inner walls of the side base bodies on the two sides of the lead screw, and a linkage base is installed on the outer wall of the lower end of the lead screw in a threaded mode. According to the utility model, crystals can be heated in a closed manner, the phenomenon of heat energy loss is reduced, the heating effect of the heater on the crystals is ensured, the energy-saving property of the heater is improved, and the crystals can be easily fed, discharged and heated, so that the convenience of the heater in use is improved; and moreover, air in the heating box can be easily, efficiently and uniformly heated, so that the heating effect of the heater on the crystal is further improved.

This invention belongs to the field of multi-component crystal preparation technology, and discloses a crystal growth method and apparatus. It uses the pure melt bubble growth method to grow multi-component crystals, where the multi-component crystals are binary or higher-order oxides. The crystal growth apparatus includes a furnace chamber, a support base, a crucible, a seed crystal rod, an outlet pipe, an inlet pipe, and three sets of annular heating components. The furnace chamber includes a furnace body and a furnace cover, with the furnace cover sealing the top opening of the furnace body. The interior of the furnace body has a heating zone surrounded by insulating material. The support base and crucible are both located within the heating zone. The seed crystal rod extends into the crucible. The three sets of annular heating components are located on the inner wall of the heating zone, and are arranged from top to bottom as an upper heating component, a middle heating component, and a lower heating component. The crucible is located in the intermediate temperature zone surrounded by the middle heating component. This invention can avoid polycrystalline phenomena and internal defects, grow larger-sized, high-quality multi-component crystals, and reduce manufacturing costs.

The utility model discloses a novel graphite composite sapphire thermal field, which relates to the technical field of sapphire crystal growth, and comprises a furnace cylinder and a crucible arranged in the furnace cylinder, a heating mechanism is arranged in the furnace cylinder, the crucible is positioned in the heating mechanism, a zirconia brick is arranged at the bottom of the furnace cylinder, a pot body supporting block is arranged in the zirconia brick, and the pot body supporting block is arranged in the furnace cylinder. The top of the pot body supporting block is attached and fixed to the crucible; a group of holes are formed in the pot body supporting block, a gas transmission mechanism is arranged in the pot body supporting block, the top end of the gas transmission mechanism is located in the heating mechanism, and the top of the zirconia brick is fixedly connected with the heating mechanism. Through the arrangement of a graphite hard felt cylinder and a tungsten cylinder which are arranged in the heating mechanism, heat dissipated by the heater can be effectively reserved, and through the arrangement of the gas transmission mechanism, the equipment can be more convenient to transmit hot flow gas or processing gas, so that the maneuverability of the equipment is improved.

The invention relates to the technical field of crystal growth, in particular to a fluxing agent for growing SrB4O7 crystals and application of the fluxing agent. According to the invention, by introducing a specific fluxing agent system composed of one or two of Li2O and Sr2V2O7, the growth mode of the SrB4O7 crystal is changed from the traditional melt method growth to the fluxing agent method growth. The fluxing agent is effectively introduced, so that the actual growth temperature of the crystal is greatly reduced. Meanwhile, the fluxing agent system enhances the capability of resisting external tiny temperature disturbance of the melt, so that the crystal growth process can be stably carried out in a wider and easier-to-control temperature range, the harsh requirement on the temperature control precision is greatly reduced, and the stability and repeatability of the process are improved.

The invention relates to a compound sulfur-gallium-aluminum and sulfur-gallium-aluminum infrared nonlinear optical crystal and a preparation method and application thereof, the molecular formula of the compound is AlGaS3, the molecular weight is 192.88 g / mol, the compound has an asymmetric center, is crystallized in a Cc space group of a monoclinic system, and the cell parameters are as follows: a = 11.1401 (5), b = 6.4092 (3), c = 7.0147 (3), beta = 121.417 (2) degrees, Z = 4, and the volume is 427.42 (3) 3. The crystal is prepared by adopting a high-temperature melt method, a chemical vapor transport method, a fluxing agent method or a Bridgman-Stockbarger method. The crystal has the advantages of being high in laser damage resistance, moderate in nonlinear optical effect, wide in light-transmitting wave band, large in hardness, good in mechanical performance, not prone to fragmentation and deliquescence, easy to process and store and the like, and can be used for manufacturing infrared nonlinear optical devices.

The present invention belongs to the technical field of the growth of sapphire crystals, and specifically relates to a method for controlling impurities during the growth of sapphire crystals, and a crucible for crystal growth. The method for controlling impurities during the growth of sapphire crystals comprises the following steps: crucible impurity removal, involving spraying an aluminum oxide solution onto the inner wall of a molybdenum crucible, placing the crucible into a crystal growing furnace, sealing a furnace body, and then starting heating for sintering, followed by cooling; and crystal growing, involving filling the treated crucible with a raw material powder, i.e. aluminum oxide, sealing the furnace body, then starting heating to melt the raw material, performing seeding and crystal growing after the raw material has melted, and after the growth of crystals is completed, cooling same and then taking out the crystals. Mainly by designing and controlling the reaction of aluminum oxide at different temperatures, a crucible for crystal growth is obtained by means of an impurity removal operation on the crucible, thereby preventing impurity elements in a new crucible from being introduced into the growth process of sapphire crystals; therefore, impurities during the growth of sapphire crystals are controlled, and the quality and consistency of crystal growth are improved.

Disclosed herein is a rare earth oxyorthosilicate crystal of formula (1) Lu2 (1-a-b-c-d) A2aB2bC2c D2 dSi (1-x + y) EyO5 (1-z) (1) wherein Lu is lutetium; a comprises a trivalent ion substitution selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Sc, Y, Al, Ga, B, In, Bi, Sb, Au, Rh, or a combination thereof; b comprises a non-trivalent ion substitution selected from the group consisting of Mg, Ca, Sr, Ba, Li, Na, K, Rb, Mn, Cu, Zn, or a combination thereof; c comprises an activating cation substitution selected from Ce < 3 + >, Ce < 4 + >, Pr < 3 + >, or a combination thereof; d comprises a monovalent halogen anion substitution selected from F, Cl, Br, or a combination thereof; e comprises a trivalent ion substitution selected from the group consisting of La, Sc, Y, Al, Ga, In, B, In, Bi, Sb, Au, Rh, or any combination thereof.

A method for growing a periodically poled nonlinear crystal may include placing a seed crystal into a melt to form a seed crystal melt mixture, where the seed crystal may include at least one of strontium tetraborate (SBO) or lithium triborate (LBO), and where the melt includes at least one of a mixture of Sr, B, and O or a mixture of Li, B, and O. The method may further include heating the seed melt mixture to a predetermined temperature until the periodically poled nonlinear crystal is formed.

The present invention relates to a high quality factor transition metal element doped garnet structure aluminate scintillating material and its preparation method and application. The chemical formula of the transition metal element doped garnet structure aluminate scintillating material is: RE 3‑x‑a Ce x A a Al 5‑y‑ z D y M z O 12 ; wherein 0<x≤0.15, 0≤y≤3, 0<z≤0.1, 0≤a≤0.1; the rare earth element RE is selected from at least one of Gd, Lu, Y, Sc, La, Nd, Eu, Tb, Dy, Ho, Er, Tm, and Yb; the A is selected from at least one of Li, Mg, Ca, K, and Na; the D is selected from at least one of Ga and In; the M is a transition metal element, selected from at least one of Cr, Mn, Fe, Co, and Ni.

The present invention relates to compounds and their nonlinear optical (NLO) crystals of A2REB3O6F2 (A=Rb, Cs, NH4; RE=Sc, Y, La), their producing method and uses thereof. The series of compounds have a chemical formula of A2REB3O6F2 (A=Rb, Cs, NH4; RE=Sc, Y, La), which are namely Rb2ScB3O6F2, Cs2ScB3O6F2, (NH4)2ScB3O6F2, Rb2YB3O6F2, Cs2YB3O6F2, (NH4)2YB3O6F2, Rb2LaB3O6F2, Cs2LaB3O6F2 and (NH4)2LaB3O6F2. The series of NLO crystals having the chemical formula of A2REB3O6F2 (A=Rb, Cs, NH4; RE=Sc, Y, La), belong to orthorhombic crystal system, and have a space group of Amm2, crystal cell parameters of a=2.7182(4)−4.9617(8)Å, b=7.7013(5)−9.9742(6)Å, c=10.2634(1)−12.904(3)Å, Z=2. A2REB3O6F2 (A=Rb, Cs, NH4; RE=Sc, Y, La) compounds were prepared by a solid-state reaction method or a hydrothermal method, and A2REB3O6F2 (A=Rb, Cs, NH4; RE=Sc, Y, La) NLO crystals were prepared by a high-temperature solution method, a hydrothermal method, or a solution method. They meet the requirements for the frequency conversion of UV wavelength lasers and could be used to prepare nonlinear optical devices.

The present invention relates to a transition metal element-doped garnet-type aluminate scintillation material with high-quality factor and preparation method and application thereof. The transition metal element-doped garnet-type aluminate scintillation material has a chemical formula of RE3-x-aCexAaAl5-y-zDyMzO12, wherein 0<x≤0.15, 0≤y≤3, 0<z≤0.1, and 0≤a≤0.1; RE is a rare earth element selected from at least one of Gd, Lu, Y, Sc, La, Nd, Eu, Tb, Dy, Ho, Er, Tm, and Yb; A is selected from at least one of Li, Mg, Ca, K, and Na; D is selected from at least one of Ga and In; and M is a transition element selected from at least one of Cr, Mn, Fe, Co, and Ni.

A crystal growth method and a crystal growth device, relating to the technical field of multi-component crystal preparation. A pure melt Kyropoulos method is used to grow multi-component crystals, and the multi-component crystals are binary and higher oxides. The crystal growth device comprises a furnace, a supporting seat, a crucible, a seed rod, an air outlet pipe, an air inlet pipe, and three annular heating assemblies, wherein the furnace comprises a furnace body and a furnace cover, the furnace cover seals a top opening of the furnace body, and a heating zone enclosed by a thermal insulation material is provided inside the furnace body; the supporting seat and the crucible are both arranged in the heating zone; the seed rod extends into the crucible; the three annular heating assemblies are arranged on the inner wall of the heating zone, the three heating assemblies are respectively an upper heating assembly, a middle heating assembly and a lower heating assembly which are arranged at intervals from top to bottom, and the crucible is located in a medium-temperature zone surrounded by the middle heating assembly. The crystal growth method can avoid the polycrystalline phenomenon and internal defects, grow larger-size and high-quality multi-component crystals, and reduce production and manufacturing costs.