44results about "Using seed in melt" patented technology

GaAs IR window slabs having largest dimensions that are greater than 8 inches, and preferably greater than 12 inches, are grown using the Horizontal Gradient Freeze (HGF) method. Heat extraction is simplified by using a shallow horizontal boat that is only slightly deeper than the desired window thickness, thereby enabling growth of large slabs while also minimizing material waste and fabrication cost as compared to slicing and shaping thick plates from large, melt-grown boules. Single crystal seeds can be used to optimize the final orientation of the slabs and minimize secondary nucleation, thereby maximizing yield. A conductive doped GaAs layer can be applied to the IR window slab to provide EMI shielding. The temperature gradient during HGF can be between 1° C. / cm and 3° C. / cm, and the directional solidification can be at a rate of between 0.25 mm / h and 2.5 mm / h.

The utility model discloses a tungsten-copper alloy heater for sapphire crystal growth, and relates to the technical field of sapphire crystal growth equipment. The heating device comprises a mounting seat, a supporting frame is fixedly connected to the bottom of the mounting seat, a heating rod is arranged at the bottom of the mounting seat, a tungsten-copper alloy electrode is arranged at the top of the mounting seat, a clamping device is arranged at the top of the mounting seat, the clamping device comprises a sliding groove, the sliding groove is formed in the top of the mounting seat, and the tungsten-copper alloy electrode is arranged in the sliding groove. The inner wall of the sliding groove is fixedly connected with a mounting block. The birdcage heater made of the tungsten copper alloy is not prone to deformation, meanwhile, a good temperature gradient and a uniform and stable temperature field are provided for sapphire crystal growth, stable crystal growth is achieved, meanwhile, the service life of the heater is prolonged, equipment damage caused by improper operation can be reduced, and the service life of the heater is prolonged. And the maintenance cost caused by frequent misoperation is reduced.

The invention relates to the technical field of sapphire crystal growth, and discloses a high-temperature measuring device for a crystal growth furnace, which comprises a base, an outer furnace body is arranged on the upper end surface of the base, a bracket is arranged at the upper end part of a connecting arm, a high-precision servo motor is arranged on the bracket, a material pulling channel is connected between the bracket and a sealing plate, and the material pulling channel is communicated with the outer furnace body. An inner furnace body is arranged in the outer furnace body, an inert gas cavity is formed in the inner furnace body, a high-frequency inductance heating frame is arranged in the middle of the bottom of the inert gas cavity, and a quartz crucible is arranged at the upper end of the high-frequency inductance heating frame. The movement attribute of the extension inner pipe is fully utilized, the cooling cavity is filled with the cooling medium, when the extension inner pipe extends into the gap between the inner furnace body and the outer furnace body, the cooling medium is liquefied to release heat, and when the extension inner pipe is located in the inner furnace body, the cooling medium is vaporized to release heat, so that heat in the movable measuring seat is absorbed, and the purpose of cooling is achieved; and circulating cooling is realized.

The invention discloses a growth method for preparing a high-strength sapphire crystal through a kyropoulos method, and belongs to the technical field of artificial crystal growth. The mechanical strength and damage resistance of the sapphire single crystal are remarkably improved by optimizing the kyropoulos growth process. The invention particularly relates to a technology for obtaining a sapphire crystal with high bending strength, high fracture toughness and excellent thermal shock resistance by regulating and controlling thermal field distribution, an interface stress state and a defect evolution behavior in a growth process.

To provide an apparatus for manufacturing oxide single crystals, a method for manufacturing gallium oxide single crystals using the apparatus, and a gallium oxide single crystal manufactured thereby. [Solution] By applying a method that uses the oxide pellet itself, which is to be made into a single crystal, as the crucible without using a separate crucible, the problem of impurities entering due to the crucible is minimized. Furthermore, by applying a method that mixes hydrocarbon fuel gas and oxygen gas and generates heat using a flame, the growth atmosphere for the oxide single crystal can be maintained in a high-oxygen atmosphere, enabling the production of high-quality oxide single crystals with few defects.

The invention relates to a sapphire single crystal (4) and a method and apparatus (1) for producing it, wherein the sapphire single crystal (4) comprises a plurality of layers (11) arranged in a C-axis (7), wherein each layer (11) has a cross-sectional topography (12), wherein the cross-sectional topographies (12) of the layers (11) repeat with respect to geometric patterns (13) formed in the cross-sectional topographies (12), wherein the geometric patterns (13) are predominantly composed of polygonal rings, in particular of concentric hexagonal or concentric hexagonal rings.

This invention discloses a barium borate crystal, its preparation method, and its applications. The barium borate crystal has the chemical formula Ba₂BeB₂O₆, a non-centrosymmetric structure, belongs to the orthorhombic crystal system, has the space group Pca₂₁, and its cell parameters are α = 90°, β = 90°, and γ = 90°. This barium borate crystal exhibits extremely low birefringence from the ultraviolet to the infrared band, and its extremely low birefringence supports its application on zero-order glass slides.

A method for growing a periodically poled nonlinear crystal may comprise introducing a seed crystal into a melt to form a seed-melt mixture, wherein the seed crystal may comprise strontium tetraborate (SBO) and / or lithium triborate (LBO), and wherein the melt comprises a mixture of Sr, B, and O and / or a mixture of Li, B, and O. The method may further comprise heating the seed-melt mixture to a predetermined temperature until the periodically poled nonlinear crystal forms.

To provide a garnet-structured aluminate scintillating material doped with a transition metal element having an ionic radius and electronegativity similar to Al3+, and an outer electron configuration of [Ar]3dn4s1-2 (n≥5), as well as a preparation method and application thereof.SOLUTION: The chemical formula of the transition metal element doped garnet-structured aluminate scintillating material is RE3-x-aCexAaAl5-y-zDyMzO12, wherein x is 0<x≤0.15, y is 0≤y≤3, z is 0<z≤0.1, and a is 0≤a≤0.1; the rare earth element RE is at least one selected from Gd, Lu, Y, Sc, La, Nd, Eu, Tb, Dy, Ho, Er, Tm, and Yb, the A is at least one selected from Li, Mg, Ca, K, and Na, the D is at least one selected from Ga and In, and the M is a transition metal element, which is at least one selected from Cr, Mn, Fe, Co, and Ni.SELECTED DRAWING: Figure 1

The invention belongs to the technical field of crystal growth, and discloses a temperature control method and system for a large-size crystal growth furnace, and the method comprises the steps: setting system time, melting point temperature, moving step length, waiting time, a preset distance between an upper temperature measurement point and a lower temperature measurement point, an initial position and an end position; collecting the temperature of an upper temperature measuring point and the temperature of a lower temperature measuring point in each preset unit time; based on the temperature of the upper temperature measuring point and the temperature of the lower temperature measuring point, calculating the temperature difference of each preset unit time, and calculating the gradient of each preset unit time; generating an alarm signal according to a preset gradient interval based on the gradient of each preset unit time, and if the alarm signal is not generated, regulating and controlling the temperature by using a temperature controller based on the temperature difference of each preset unit time, and eliminating the temperature difference between the temperature of the upper temperature measurement point and the temperature of the melting point; according to the invention, the traditional temperature control logic is broken through, and accurate regulation and control and efficient and safe management of the crystal growth process are realized.

The utility model belongs to the technical field of crystal preparation, and discloses a Kyropoulos method crystal growth device which comprises a hearth, and a heating area is arranged in the hearth; the bearing seat and the crucible are arranged in the heating area; the seed rod extends into the crucible; at least two groups of annular heating assemblies are arranged on the inner wall of the heating area, the at least two groups of heating assemblies are mutually independent and adjacently arranged in the vertical direction, and each group of heating assemblies is provided with a temperature control thermocouple; when the number of the heating assemblies is two, the two heating assemblies are the upper heating assembly and the lower heating assembly respectively, and the crucible is located in the area surrounded by the lower heating assembly. When the number of the heating assemblies is three, the three heating assemblies are the upper heating assembly, the middle heating assembly and the lower heating assembly respectively, and the crucible is located in the area surrounded by the middle heating assembly. The kyropoulos method crystal growing device can avoid polycrystals and internal defects, and can grow crystals with larger sizes.

The present invention provides a lead barium boron nitrogen oxide compound and a lead barium boron nitrogen oxide nonlinear optical crystal as well as a preparation method and use thereof. The chemical formula of the compound is Pb2Ba3(BO3)3(NO3), the molecular weight is 1039.98, and the compound is prepared by a solid phase synthesis method or a vacuum packaging method. The chemical formula of the crystal compound is Pb2Ba3(BO3)3(NO3), the molecular weight is 1039.98, and the crystal belongs to the orthorhombic system with a space group of C 2221, the unit cell parameters are a =10.4818(5)Å, b =14.4102(7)Å, c =8.0332(4)Å, α= 90°, β= 90°, c= 90°, the unit cell volume is 1213.37(10)Å 3 The frequency doubling effect of the crystal is about 3.2 times that of KH2PO4 (KDP), and the ultraviolet cutoff edge is about 320 nm. The crystal is grown by melt method, high-temperature melt method, or vacuum packaging method. The crystal has good chemical stability and can be used as a short-wavelength ultraviolet nonlinear optical crystal in all-solid-state lasers.

The invention relates to a fluorine-doped cesium zinc chloride scintillator single crystal and a preparation method and application thereof. The chemical formula of the fluorine-doped cesium zinc chloride scintillator single crystal is Cs2ZnCl4: xF, wherein the element F is F <->; wherein x represents the atomic ratio of doping elements, and x is less than or equal to 50at%.

In one embodiment, there is provided an apparatus for growing a silicon (Si) single crystal ingot, the apparatus comprising: a chamber; a crucible which is provided in the chamber and accommodates a Si melt; the heating unit is arranged on the periphery and / or the lower part of the crucible; a first water-cooled tube fixed to an upper portion in the chamber and provided on the periphery of a Si single crystal ingot grown and raised from the Si melt; a heat insulating member provided in an adjacent region of the crucible; a thermal barrier disposed on the crucible and an upper portion of the thermal insulation member; a lifting member for lifting the thermal barrier; a second water-cooled tube connected to the lifting member to be lifted up and down, and provided on the thermal barrier; and a current measuring unit for measuring a current between the lifting member and the heat insulating member.

A method for growing a periodically polarized nonlinear crystal may include placing a seed crystal in a melt to form a seed crystal melt mixture, the seed crystal comprising at least one of strontium tetraborate (SBO) or lithium triborate (LBO), and the melt comprising at least one of a mixture of Sr, B, and O or a mixture of Li, B, and O. The method may further include heating the seed crystal melt mixture to a predetermined temperature until a periodically polarized nonlinear crystal is formed.

Disclosed herein is a rare earth oxyorthosilicate crystal having a formula (1): Lu2(1-a-b-c-d)A2aB2bC2c D2dSi(1-x+y)EyO5(1-z), wherein Lu is lutetium; A comprises a trivalent ionic substitution selected from La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Sc, Y, Al, Ga, B, In, Bi, Sb, Au, Rh, or a combination thereof; B comprises a non-trivalent ionic substitution selected from Mg, Ca, Sr, Ba, Li, Na, K, Rb, Mn, Cu, Zn, or a combination thereof; C comprises an activating cation substitution selected from Ce3+, Ce4+, Pr3+, or a combination thereof; D comprises a monovalent halogen anion substitution selected from F, Cl, Br, or a combination thereof; E comprises a trivalent ion substitution selected from La, Sc, Y, Al, Ga, In, B, In, Bi, Sb, Au, Rh, or any combination of thereof.

The application discloses a crystal growth furnace and a seed crystal replacement process, relates to the technical field of crystal growth, and has the technical scheme that the crystal growth furnace comprises an isolation bin, a furnace body, a crystal supply assembly, the crystal supply assembly comprises a receiving cylinder, seed crystals are stacked in the receiving cylinder, a push plate is arranged in the receiving cylinder, a pushing mechanism is arranged on one side of the push plate, a driving assembly is arranged, the driving assembly comprises a driving sleeve, a plurality of extension frames are fixedly arranged on the driving sleeve, a clamping mechanism is arranged on one side of the extension frame, and the driving assembly further comprises a power mechanism; a heat insulation mechanism is arranged and is used for preventing heat from being lost to the isolation bin through the feeding pipe; and a discharging mechanism is arranged and is used for discharging the waste seed crystals. According to the technical scheme, the receiving cylinder and the pushing mechanism are arranged, the seed crystals can be received and placed in a space-saving vertical stacking mode, the seed crystals are pushed upward through the push plate, the damage probability of the seed crystals is greatly reduced, and the integrity of the seed crystals is guaranteed.

The present invention relates to an apparatus for preparing an oxide single crystal, a method for preparing a gallium oxide single crystal using the same, and a gallium oxide single crystal prepared according to the method, and more particularly, to an apparatus for preparing a single crystal and a method for preparing a gallium oxide single crystal using the same, according to the present invention, a method in which oxide particles for producing a single crystal are used as a melting furnace instead of oxide particles per se for producing a single crystal is used as the melting furnace, thereby minimizing the problem of impurity inflow through the melting furnace, and the growth atmosphere of the oxide single crystal is maintained at a high oxygen atmosphere by using a method in which a hydrocarbon fuel gas and oxygen are mixed and heat is released by spark. Therefore, the high-quality oxide single crystal can be prepared.

The invention discloses a crystal growth furnace and a seed crystal replacement process, and relates to the technical field of crystal growth, the technical scheme is that the crystal growth furnace comprises an isolation bin, a furnace body and a crystal supply assembly, the crystal supply assembly comprises a storage cylinder, seed crystals are stacked in the storage cylinder, a push plate is arranged in the storage cylinder, a push mechanism and a driving assembly are installed on one side of the push plate, and the driving assembly comprises a driving sleeve; a plurality of extending frames are fixedly mounted on the driving sleeve, a clamping mechanism is mounted on one side of each extending frame, and the driving assembly further comprises a power mechanism; the heat insulation mechanism is used for preventing heat from being dissipated into the insulation bin through the feeding pipe; and the unloading mechanism is used for unloading the waste seed crystals. According to the technical scheme, by arranging the storage barrel and the pushing mechanism, the seed crystals can be stored in a space-saving vertical stacking mode, meanwhile, the seed crystals are pushed upwards through the pushing plate, the damage probability of the seed crystals is greatly reduced, and the completeness of the seed crystals is guaranteed.

The present invention belongs to the technical field of crystal growth, and particularly relates to a method for growing large-size titanium-doped sapphire crystals by the Kyropoulos method. The method includes steps of raw material preparation and loading, heating up to melt the material, temperature adjustment and seeding, crystal growth, in-situ annealing during crystal cooling, and wafer H2 annealing. The present invention uses high-purity graphite materials to construct the thermal field, reducing thermal field pollution, precisely controlling the temperature distribution through a double heating body, and forming a stable temperature gradient field; during heating, a mixed gas of Ar and CO is introduced as a protective gas to inhibit adverse reactions in the furnace and maintain the stable existence of Ti 3+ ions in the melt; during the crystal growth process by the Kyropoulos method, it does not contact the crucible, reducing stress concentration, improving crystal uniformity, and realizing an efficient growth method for large-size, high-quality, and low-defect titanium-doped sapphire crystals, meeting the manufacturing requirements of high-end lasers and optical devices.

To obtain a sapphire single crystal having less defects and easily machined.SOLUTION: In a method for manufacturing a sapphire single crystal, a single crystal sapphire seed crystal 1 has a rhombohedral system crystal structure defining three crystal axes [A], [C] and [M] perpendicular to each other and perpendicular to crystal planes A(11-20), C(0001) and M(10-10), respectively; the single crystal sapphire seed crystal 1 is a plate 2 having a boundary formed of two flat surfaces 4 parallel to each other and separately extended; and the single crystal sapphire plate 2 is obtained by cutting the initial sapphire single crystal so that any of the crystal axis [A], [C] or [M] of the single crystal sapphire plate 2 forms the normal D1 of the flat surface 4 of the single crystal sapphire plate 2 and an angle (α) of 5-85°.SELECTED DRAWING: Figure 1

The invention provides a compound lead-barium-boron-oxygen-fluorine and a lead-barium-boron-oxygen-fluorine nonlinear optical crystal as well as a preparation method and application thereof, the chemical formula of the compound is Pb1. 23Ba3. 77 (BO3) 3F, the molecular weight is 968.05, and the compound is prepared by adopting a solid-phase synthesis method or a vacuum packaging method; the chemical formula of the compound of the crystal is Pb1.23Ba3.77 (BO3) 3F, the molecular weight is 968.05, the crystal belongs to an orthorhombic system, the space group is C2221, the cell parameters are as follows: a = 10.346 (8), b = 14.759 (11), c = 7.632 (6), alpha = 90 degrees, beta = 90 degrees, gamma = 90 degrees, the unit cell volume is 1165.4 (15) 3, the frequency-doubled effect of the crystal is about 2.8 times that of KH2PO4 (KDP), the ultraviolet cut-off edge is about 280 nm, the crystal is grown by adopting a melt method, a high-temperature melt method or a vacuum packaging method, the chemical stability of the crystal is good, and the crystal is suitable for large-scale production. The crystal can be used as a short-wavelength ultraviolet nonlinear optical crystal in an all-solid-state laser.

This invention belongs to the field of crystal material preparation technology and discloses a method for growing large-size, high-purity PMN single crystals using a top-seeded crystal growth method. It employs a gradient molten salt single crystal furnace equipped with a hollow oxygen-bearing seed crystal rod and a bidirectional rotation mechanism. The seed crystal rod and crucible rotate in opposite directions. By optimizing the composite flux ratio and identifying the drawbacks of excessively high / low ratios, adopting an extremely low cooling rate adapted to the temperature sensitivity of PMN, and designing a staged speed control strategy that precisely correlates crystal outline size with rotation speed, combined with temperature field optimization due to the opposite rotation of the seed crystal and crucible, and nucleation control through oxygen-bearing at the seed crystal to create a cold end, the crystal outline size is observed at high temperature, and process parameters are adjusted in real time to achieve high-purity growth of large-size PMN single crystals. The final obtained PMN single crystals are verified by XRD, scanning electron microscopy, EDS energy dispersive spectroscopy, and dielectric temperature spectroscopy to be free of impurities and have a pure crystal form. The single crystal size breaks through the large-size level and has good formability, meeting the application requirements of devices in the fields of electronics, piezoelectrics, and optics.

The invention provides a compound lead-barium-boron-nitrogen-oxygen and a lead-barium-boron-nitrogen-oxygen nonlinear optical crystal as well as a preparation method and application thereof, the chemical formula of the compound is Pb2Ba3 (BO3) 3 (NO3), the molecular weight is 1039.98, and the compound is prepared by adopting a solid-phase synthesis method or a vacuum packaging method; the chemical formula of the compound of the crystal is Pb2Ba3 (BO3) 3 (NO3), the molecular weight is 1039.98, the crystal belongs to an orthorhombic system, the space group is C2221, the cell parameters are as follows: a = 10.4818 (5), b = 14.4102 (7), c = 8.0332 (4), alpha = 90 degrees, beta = 90 degrees, gamma = 90 degrees, the unit cell volume is 1213.37 (10) 3, the frequency-doubled effect of the crystal is about 3.2 times that of KH2PO4 (KDP), the ultraviolet cut-off edge is about 320 nm, the crystal is grown by adopting a melt method, a high-temperature melt method or a vacuum packaging method, the chemical stability of the crystal is good, and the crystal is suitable for industrial production. The crystal can be used as a short-wavelength ultraviolet nonlinear optical crystal in an all-solid-state laser.

Provided are a method of producing single crystal AlN, single crystal AlN, and a single crystal AlN production apparatus with which single crystal AlN can be cheaply and continuously produced. The method of producing single crystal AlN includes a melt formation step of heating and melting an alloy containing Al to form a melt of the alloy and a deposition step of cooling a portion of the melt and providing a temperature gradient in the melt while causing deposition of single crystal AlN. In the deposition step, a nitrogen-containing gas is brought into contact with a high-temperature portion of the melt and a single crystal AlN seed crystal or a substrate for crystal growth is held in a low-temperature portion of the melt so as to continue to take nitrogen into the melt in the high-temperature portion while causing deposition of single crystal AlN on the AlN seed crystal or substrate and continuous growth of single crystal AlN in the low-temperature portion.

The invention provides a compound lithium barium boron oxygen fluorine nitro and a lithium barium boron oxygen fluorine nitro nonlinear optical crystal and a preparation method and application thereof, the chemical formula of the compound is LiBa3B9O16FNO3, the molecular weight is 853.27, and the compound is prepared by adopting a solid-phase synthesis method; the chemical formula of the compound of the crystal is LiBa3B9O16FNO3, the molecular weight is 853.27, the compound belongs to a trigonal system, the space group is P31c, the cell parameters are as follows: a = 10.1393 (7), b = 10.1393 (7), c = 8.6977 (8), alpha = 90 degrees, beta = 90 degrees, gamma = 120 degrees, the unit cell volume is 774.37 (13) 3, the frequency-doubled effect of the crystal is about 1-3 times that of KH2PO4 (KDP), the ultraviolet cut-off edge is about 208 nm, the crystal is grown by adopting a melt method, a high-temperature melt method or a vacuum packaging method, the chemical stability of the crystal is good, and the crystal is suitable for industrial production. The crystal can be used as a short-wavelength ultraviolet nonlinear optical crystal in an all-solid-state laser.

The present disclosure relates to an apparatus for producing an oxide single crystal, a method of producing a gallium oxide single crystal using the same, and a gallium oxide single crystal produced thereby. More specifically, the present disclosure relates to an apparatus for producing a single crystal and a method for producing a gallium oxide single crystal using the same, which may minimize the problem of impurities being introduced by a crucible, by applying a method of using the oxide pellets themselves, which are to be made into a single crystal, as a crucible without using a separate crucible, and maintain the growth atmosphere of the oxide single crystal at a high-oxygen atmosphere by applying a method of generating heat using a flame consisting of a mixture of a hydrocarbon fuel gas and oxygen gas, thereby producing a high-quality oxide single crystal with few defects.

The utility model discloses a heater for crystal growth, which comprises a base, a heating box is arranged on one side of the top end of the base, a box cover is arranged above the heating box, a heat insulation plate is arranged at the bottom end in the heating box, side seat bodies are arranged on the inner walls of the two sides of the heating box above the heat insulation plate, and rotary driving pieces are arranged on the inner walls of the lower ends of the side seat bodies through supports. The top end of the rotary driving piece penetrates through the heat insulation plate and is provided with a lead screw, limiting rails are arranged on the inner walls of the side base bodies on the two sides of the lead screw, and a linkage base is installed on the outer wall of the lower end of the lead screw in a threaded mode. According to the utility model, crystals can be heated in a closed manner, the phenomenon of heat energy loss is reduced, the heating effect of the heater on the crystals is ensured, the energy-saving property of the heater is improved, and the crystals can be easily fed, discharged and heated, so that the convenience of the heater in use is improved; and moreover, air in the heating box can be easily, efficiently and uniformly heated, so that the heating effect of the heater on the crystal is further improved.

The present invention provides a method for growing gallium oxide single crystal by kyropoiesis, and the method for growing gallium oxide single crystal by kyropoiesis includes S01, furnace loading: loading gallium oxide raw material with a weight of M1 and a purity of 5N into a crucible, and placing the crucible with the raw material into a single crystal growth furnace; placing a plurality of heat preservation screens at intervals above the crucible; placing a seed crystal with a [010] crystal orientation on the top, and closing the single crystal growth furnace door; S02, heating and melting: heating and keeping the temperature until the gallium oxide raw material is completely melted; S03, seeding and growing; S04, cooling and crystal taking: after the growth is completed, the crystal temperature is lowered to room temperature and the crystal is taken out. In the method for growing gallium oxide single crystal by kyropoiesis provided by the present invention, after the heat preservation screen is set, the flow velocity of the volatile gas of the raw material can be blocked, the axial temperature gradient of the thermal field can be reduced and stabilized, and it is more conducive to optimizing the growth quality of gallium oxide crystal by kyropoiesis.

This invention belongs to the field of multi-component crystal preparation technology, and discloses a crystal growth method and apparatus. It uses the pure melt bubble growth method to grow multi-component crystals, where the multi-component crystals are binary or higher-order oxides. The crystal growth apparatus includes a furnace chamber, a support base, a crucible, a seed crystal rod, an outlet pipe, an inlet pipe, and three sets of annular heating components. The furnace chamber includes a furnace body and a furnace cover, with the furnace cover sealing the top opening of the furnace body. The interior of the furnace body has a heating zone surrounded by insulating material. The support base and crucible are both located within the heating zone. The seed crystal rod extends into the crucible. The three sets of annular heating components are located on the inner wall of the heating zone, and are arranged from top to bottom as an upper heating component, a middle heating component, and a lower heating component. The crucible is located in the intermediate temperature zone surrounded by the middle heating component. This invention can avoid polycrystalline phenomena and internal defects, grow larger-sized, high-quality multi-component crystals, and reduce manufacturing costs.