6results about How to "Simple growth process" patented technology

This invention discloses a samarium-lanthanum co-doped calcium oxyborate yttrium nonlinear optical crystal material, its preparation method, and its applications. The samarium-lanthanum co-doped calcium oxyborate yttrium nonlinear optical crystal material belongs to the monoclinic crystal system, has a space group of Cm, and a chemical formula of Sm. 0.3 La 0.1 :Y 0.6 Ca4O(BO3)3 has a second harmonic response intensity of 0.89 × KDP, and exhibits transmittance exceeding 80% in the 500–1000 nm and 1600–2400 nm wavelength ranges. It also has a strong absorption peak in the 1000–1600 nm wavelength range. Therefore, the samarium-lanthanum co-doped calcium oxyborate yttrium nonlinear optical crystal can be considered as a nonlinear optical crystal material with broad application prospects in the field of optics.

The invention relates to the field of semiconductor micro-nano light-emitting devices, in particular to a high-density AlN penetrating dislocation ultraviolet light-emitting device and a preparation method thereof, which are suitable for high-integration, small-size and high-luminous-intensity micro-nano light-emitting devices. The method comprises the following steps: firstly, epitaxially growing a high-quality AlN thin film on an Al2O3 substrate by a pulse laser deposition method, and then measuring the luminescence behavior of penetrating dislocation in the AlN thin film by utilizing a cathode fluorescence spectrum. Due to the fact that large lattice mismatch exists between the AlN thin film and the Al2O3 substrate, a high-density penetrating dislocation array is formed in the grown AlN thin film. And due to the change of coordination number and bond length penetrating through the dislocation core, the dislocation shows a high-brightness ultraviolet light-emitting phenomenon, and a micro-nano light-emitting device taking dislocation as a light-emitting unit is formed. The invention provides a new thought for the application of nano-scale dislocation in the field of functional devices, and lays a foundation for the development of novel micro-nano light-emitting devices in the fields related to high-resolution displays, quantum communication and micro photoelectric sensors.

The invention discloses a lanthanum ion doped oxygen calcium yttrium borate nonlinear optical crystal material and a preparation method thereof, the lanthanum ion doped oxygen calcium yttrium borate nonlinear optical crystal material belongs to a monoclinic system, the space group is Cm, the chemical formula is La0.1: Y0. 9Ca4O (BO3) 3, the frequency multiplication coefficient is 2 * KDP, the ultraviolet cut-off edge is less than 200 nm, and no absorption peak with the intensity greater than or equal to 0.2 cm <-1 > exists in the range of 200-2500 nm. Therefore, the lanthanum ion doped yttrium calcium oxide borate crystal can be used as a nonlinear optical material with a wide application prospect in the field of optical parameter chirped pulse amplification.

The invention relates to an epitaxial device and a forming method of an epitaxial layer. The epitaxy apparatus includes: a processing chamber; an injection pipeline; the first doping structure comprises a first transmission pipeline which is connected with the first doping source and the injection pipeline; the second doping structure comprises a second transmission pipeline and a first mixer, the second transmission pipeline is connected with a first gas outlet of the first mixer and the injection pipeline, a first gas inlet of the first mixer is connected with a second doping source, and a second gas inlet of the first mixer is connected with a dilution source; the third doping structure comprises a third transmission pipeline, a second mixer and a third mixer, the third transmission pipeline is connected with a third gas outlet of the third mixer and the injection pipeline, a fifth gas inlet of the third mixer is connected with the second gas outlet, and a sixth gas inlet of the third mixer is connected with a dilution source; a third gas inlet of the second mixer is connected with a third doping source, and a fourth gas inlet is connected with a dilution source. According to the invention, the growth process of the epitaxial layer is simplified, and the growth cost of the epitaxial layer is reduced.

This invention relates to the field of organic functional crystal growth technology, specifically a method for growing organic crystals based on the control of the included angle of the inner wall of a crucible. The method employs a quartz crucible with an axisymmetric conical inner cavity, and controls the included angle β of the inner wall of the crucible to be 10°–30°, preferably 15°–20°. After loading the organic crystal raw material into the crucible, a vacuum of 1×10⁻⁶ is applied. ‑2 After being sealed by welding, and after passing the pre-growth inspection and sealing, the melt is placed in a Bridgman crystal growth furnace for heating and melting and held at that temperature for 24 hours. The axial temperature gradient is controlled, and the melt is directionally solidified and grown from bottom to top at a rate of 1-1.5 mm / h. The organic single crystal is then slowly cooled to obtain the organic single crystal. This invention optimizes the melt flow field and solid-liquid interface by adjusting the crucible angle, reduces the radial temperature gradient, reduces defects such as crystal cracks and dislocations, and improves crystal integrity and optical uniformity. The process is simple, has good repeatability, and is suitable for large-size, high-quality growth of organic scintillation crystals and organic optoelectronic crystals.

The invention belongs to the technical field of semiconductor devices, and particularly discloses a high-electron-mobility transistor with an InGaN insertion layer and a double-barrier cap layer and a preparation method of the high-electron-mobility transistor. The high-electron-mobility transistor comprises a substrate, a nucleating layer, an AlGaN gradient buffer layer, a GaN channel layer, an InGaN insertion layer, an AlGaN barrier layer, a barrier protection layer, a double-barrier cap layer (an AlGaN layer, a GaN layer and an AlGaN layer) and a gate electrode which are sequentially arranged in a contact mode. Ohmic contact regions are arranged on the two sides of the AlGaN barrier layer and the barrier protection layer respectively and are electrically connected with the source electrode and the drain electrode respectively. By introducing the specific epitaxial layer combination and doping design, the distribution and control of two-dimensional electron gas are optimized, the confinement to electrons is increased, the output characteristic of the device is improved, the current collapse effect is inhibited, the leakage current is reduced, and the threshold voltage stability and switching characteristic of the device are improved.