4results about How to "Simple growth process" patented technology

This invention discloses a samarium-lanthanum co-doped calcium oxyborate yttrium nonlinear optical crystal material, its preparation method, and its applications. The samarium-lanthanum co-doped calcium oxyborate yttrium nonlinear optical crystal material belongs to the monoclinic crystal system, has a space group of Cm, and a chemical formula of Sm. 0.3 La 0.1 :Y 0.6 Ca4O(BO3)3 has a second harmonic response intensity of 0.89 × KDP, and exhibits transmittance exceeding 80% in the 500–1000 nm and 1600–2400 nm wavelength ranges. It also has a strong absorption peak in the 1000–1600 nm wavelength range. Therefore, the samarium-lanthanum co-doped calcium oxyborate yttrium nonlinear optical crystal can be considered as a nonlinear optical crystal material with broad application prospects in the field of optics.

The invention discloses a lanthanum ion doped oxygen calcium yttrium borate nonlinear optical crystal material and a preparation method thereof, the lanthanum ion doped oxygen calcium yttrium borate nonlinear optical crystal material belongs to a monoclinic system, the space group is Cm, the chemical formula is La0.1: Y0. 9Ca4O (BO3) 3, the frequency multiplication coefficient is 2 * KDP, the ultraviolet cut-off edge is less than 200 nm, and no absorption peak with the intensity greater than or equal to 0.2 cm <-1 > exists in the range of 200-2500 nm. Therefore, the lanthanum ion doped yttrium calcium oxide borate crystal can be used as a nonlinear optical material with a wide application prospect in the field of optical parameter chirped pulse amplification.

This invention relates to the field of organic functional crystal growth technology, specifically a method for growing organic crystals based on the control of the included angle of the inner wall of a crucible. The method employs a quartz crucible with an axisymmetric conical inner cavity, and controls the included angle β of the inner wall of the crucible to be 10°–30°, preferably 15°–20°. After loading the organic crystal raw material into the crucible, a vacuum of 1×10⁻⁶ is applied. ‑2 After being sealed by welding, and after passing the pre-growth inspection and sealing, the melt is placed in a Bridgman crystal growth furnace for heating and melting and held at that temperature for 24 hours. The axial temperature gradient is controlled, and the melt is directionally solidified and grown from bottom to top at a rate of 1-1.5 mm / h. The organic single crystal is then slowly cooled to obtain the organic single crystal. This invention optimizes the melt flow field and solid-liquid interface by adjusting the crucible angle, reduces the radial temperature gradient, reduces defects such as crystal cracks and dislocations, and improves crystal integrity and optical uniformity. The process is simple, has good repeatability, and is suitable for large-size, high-quality growth of organic scintillation crystals and organic optoelectronic crystals.

The invention belongs to the technical field of semiconductor devices, and particularly discloses a high-electron-mobility transistor with an InGaN insertion layer and a double-barrier cap layer and a preparation method of the high-electron-mobility transistor. The high-electron-mobility transistor comprises a substrate, a nucleating layer, an AlGaN gradient buffer layer, a GaN channel layer, an InGaN insertion layer, an AlGaN barrier layer, a barrier protection layer, a double-barrier cap layer (an AlGaN layer, a GaN layer and an AlGaN layer) and a gate electrode which are sequentially arranged in a contact mode. Ohmic contact regions are arranged on the two sides of the AlGaN barrier layer and the barrier protection layer respectively and are electrically connected with the source electrode and the drain electrode respectively. By introducing the specific epitaxial layer combination and doping design, the distribution and control of two-dimensional electron gas are optimized, the confinement to electrons is increased, the output characteristic of the device is improved, the current collapse effect is inhibited, the leakage current is reduced, and the threshold voltage stability and switching characteristic of the device are improved.