35 results about "Semiconductor waveguides" patented technology

A semiconductor structure including a semiconductor waveguide layer over a second dielectric layer and between sidewalls of a first dielectric layer. A first cladding layer is between the sidewalls of the first dielectric layer and directly over the semiconductor waveguide layer. A second cladding layer is between sidewalls of the second dielectric layer and directly under the semiconductor waveguide layer. A difference between a refractive index of the semiconductor waveguide layer and a refractive index of the first cladding layer is less than a difference between the refractive index of the semiconductor waveguide layer and a refractive index of the first dielectric layer. A difference between the refractive index of the semiconductor waveguide layer and a refractive index of the second cladding layer is less than a difference between the refractive index of the semiconductor waveguide layer and a refractive index of the second dielectric layer.

A semiconductor optical waveguide is provided. The semiconductor optical waveguide has a semiconductor substrate. The semiconductor substrate defines opposing top and bottom surfaces, and an optical TSV extending substantially perpendicular to the top and bottom surfaces. The semiconductor waveguide further includes a waveguide optical circuit on the semiconductor substrate and optically connected to the optical TSV.

An optical semiconductor integrated device (1) is provided with an optical modulation unit (4), and a semiconductor waveguide element unit (3) connected to the optical modulation unit (4). The light modulation unit (4) includes an active layer (42), an upper cladding layer (43), and a first semiconductor region (44) having the same conductivity type as the upper cladding layer (43). The first semiconductor region (44) is disposed in a portion between the active layer (42) and the upper cladding layer (43). A first collision ionization coefficient of the first semiconductor region (44) is smaller than a collision ionization coefficient of the upper cladding layer (43).

A semiconductor optical device includes n-doped, p-doped, and active layers, an optical waveguide structure, and drive current structure(s). The waveguide structure defines optical mode(s); the drive current structure defines a drive current path. One or both of those structures are arranged to result in a selected (or maximized) degree of overlap between lateral profiles of current density and optical intensity. The optical device can be arranged as a diode laser or optical amplifier.

The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula:⋀=m⁢λ2*neff;in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula:⋀=o⁢λ2*neff.Wherein, ∧ is the length of grating period, λ is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2. The first grating region is a first-order grating region, and the second grating region is a second-order grating region, so as to form a hybrid grating structure in the grating layer. The surface emitting laser emits laser light perpendicularly from a light-emitting surface defined by the second grating region.

An integrated chip including a semiconductor waveguide layer. A core portion of the semiconductor waveguide layer protrudes upward from a base portion of the semiconductor waveguide layer. A first heat radiator is spaced over the semiconductor waveguide layer and laterally spaced from the core portion in a first direction. A second heat radiator is spaced over the semiconductor waveguide layer and laterally spaced from the core portion in a second direction. A first dielectric layer is between the first heat radiator and the semiconductor waveguide layer and between the second heat radiator and the semiconductor waveguide layer. A distance between the first heat radiator and the semiconductor waveguide layer is less than a distance between the first heat radiator and the core portion. A distance between the second heat radiator and the semiconductor waveguide layer is less than a distance between the second heat radiator and the core portion.

The invention provides a grating-integrated semiconductor light-emitting structure and a preparation method thereof, the grating-integrated semiconductor light-emitting structure comprises a semiconductor substrate layer, a gain structure and a grating waveguide dielectric structure, and the junction of the grating waveguide dielectric structure and the gain structure is provided with an anti-reflection structure; the gain structure is located on one side of a part of the semiconductor substrate layer in the fast axis direction, and the gain structure comprises a first semiconductor limiting layer, a first semiconductor waveguide layer, an active layer, a second semiconductor waveguide layer and a second semiconductor limiting layer which are sequentially arranged in the fast axis direction; the grating waveguide dielectric structure is located on one side of a part of the semiconductor substrate layer in the fast axis direction and located on one side of the gain structure in the cavity length direction, and a grating is integrated in the grating waveguide dielectric structure. And the wavelength temperature drift coefficient of the semiconductor light-emitting structure of the integrated grating is reduced.

The embodiment of the utility model provides an integrated crystal grain. An integrated die includes a substrate, a semiconductor waveguide layer, a conductive heater wire, a first heater contact, and a second heater contact. The semiconductor waveguide layer is over the substrate. A base portion of the semiconductor waveguide layer extends across over the substrate. The ridge portion of the semiconductor waveguide layer protrudes upward beyond the base portion. Conductive heater lines are spaced over the ridge portion of the semiconductor waveguide layer. First and second heater contacts extend from the conductive heater wire to a base portion of the semiconductor waveguide layer on opposite sides of the ridge portion of the semiconductor waveguide layer.

Structures for a waveguide and methods of forming a waveguide. The structure comprises a substrate, a waveguide core comprising a compound semiconductor material, and a layer disposed on the substrate. The layer comprises the compound semiconductor material, and the layer includes a cavity positioned beneath the waveguide core.

Photonic integrated circuit (PIC) devices are disclosed. Such PIC devices include a substrate and a semiconductor waveguide on a surface of the substrate. A p-type semiconductor layer is on the surface of the substrate, with the p-type semiconductor layer being on a first side of the semiconductor waveguide. An n-type semiconductor layer is on the surface of the substrate, with the n-type semiconductor layer being on a second side of the semiconductor waveguide so that a region of the semiconductor waveguide is between the p-type and n-type semiconductor layers. Moreover, the p-type semiconductor layer, the n-type semiconductor layer, and the region of the semiconductor waveguide between the n-type and p-type semiconductor layers define a radiation emitting diode configured to emit radiation through the semiconductor waveguide.

Provided is a semiconductor light source element or an optical device including a semiconductor optical waveguide of a high-mesa semi-insulated embedded structure having a window structure made of the same material as an overclad layer at a light emission end, and a method for manufacturing thereof, in which an active layer at a portion of the window structure is removed, and then the same layer as the overclad layer is formed.

The application relates to a polarization-independent conversion device and belongs to the technical field of semiconductor waveguide communication devices. The application comprises, from bottom to top, a wafer substrate, a buried oxygen layer of the wafer, a device layer and a SiO2 upper cladding layer of the device. The device layer comprises an input optical waveguide, a polarization beam splitting rotator, a phase shifter assembly, an optical beam splitting assembly, a Y-branch waveguide, a cross waveguide and an output optical waveguide. The polarization beam splitting rotator is used for converting TM mode in the optical signal in the input optical waveguide into TE mode; the phase shifter assembly makes the phase difference of the optical waves entering the two multimode interference coupler input ends of the optical beam splitting assembly be 0; the optical beam splitting assembly is used for optical equal power division; the Y-branch waveguide superimposes signals, and finally outputs TE mode. The application realizes that, no matter whether the polarization state of the input light is TE mode or TM mode, the output is TE mode, a polarization conversion independent of the input polarization state is realized, and the device structure is excellent in performance, simple in structure and small in size.

A semiconductor optical device includes n-doped, p-doped, and active layers, an optical waveguide structure, and drive current structure(s). The waveguide structure defines optical mode(s); the drive current structure defines a drive current path. One or both of those structures are arranged to result in a selected (or maximized) degree of overlap between lateral profiles of current density and optical intensity. The optical device can be arranged as a diode laser or optical amplifier.

A semiconductor optical device includes n-doped, p-doped, and active layers, an optical waveguide structure, and drive current structure(s). The waveguide structure defines optical mode(s); the drive current structure defines a drive current path. One or both of those structures are arranged to result in a selected (or maximized) degree of overlap between lateral profiles of current density and optical intensity. The optical device can be arranged as a diode laser or optical amplifier.

An integrated chip including a base dielectric layer and a multi-tiered semiconductor waveguide layer over the base dielectric layer. The multi-tiered semiconductor waveguide layer has a first waveguide tier having a first width at a first height over the base dielectric layer. The multi-tiered semiconductor waveguide layer has a second waveguide tier having a second width, greater than the first width, at a second height, less than the first height, over the base dielectric layer. A cladding layer is over the multi-tiered semiconductor waveguide layer. A multi-tiered conductive heater layer is over the cladding layer. The multi-tiered conductive heater layer has a first heater tier over the first waveguide tier. The multi-tiered conductive heater layer has a pair of second heater tiers at the first height, over the second waveguide tier, and on opposite sides of the first waveguide tier.

A part of a photonic integrated circuit comprising: a semiconductor waveguide, an electrically conductive n-type semiconductor layer, and a photodiode. The semiconductor waveguide is on a substrate. The electrically conductive n-type semiconductor layer is between the semiconductor waveguide and the substrate. A portion of the electrically conductive n-type semiconductor layer has been removed by etching between the semiconductor waveguide and the substrate. The photodiode is optically connected to the semiconductor waveguide.

An integrated chip includes a substrate, a semiconductor waveguide layer, a conductive heater line, a first heater contact, and a second heater contact. The semiconductor waveguide layer is over the substrate. A base portion of the semiconductor waveguide layer extends laterally over the substrate. A ridge portion of the semiconductor waveguide layer protrudes upward from the base portion. The conductive heater line is spaced over the ridge portion of the semiconductor waveguide layer. The first heater contact and the second heater contact extend from the conductive heater line to the base portion of the semiconductor waveguide layer on opposite sides of the ridge portion of the semiconductor waveguide layer.

The method includes: performing a first etch on a substrate, where the substrate includes six cross sections arranged in sequence to define five partitions along a first direction, where the first etch forms a first protruding region extending from first to fifth partitions and two first connection regions on both sides of the first protruding region; performing second etching on the two first connection areas to form a strip waveguide along the sixth cross section; performing third etching on the two first connection areas to form a rib waveguide along a third cross section; and performing fourth etching on the two first connection regions to form the deep-rib waveguide along the first cross section. The embodiment of the invention also relates to a semiconductor waveguide device and a forming method thereof.

A semiconductor optical device includes n-doped, p-doped, and active layers, an optical waveguide structure, and drive current structure(s). The waveguide structure defines optical mode(s); the drive current structure defines a drive current path. One or both of those structures are arranged to result in a selected (or maximized) degree of overlap between lateral profiles of current density and optical intensity. The optical device can be arranged as a diode laser or optical amplifier.

A semiconductor optical device includes n-doped, p-doped, and active layers, an optical waveguide structure, and drive current structure(s). The waveguide structure defines optical mode(s); the drive current structure defines a drive current path. One or both of those structures are arranged to result in a selected (or maximized) degree of overlap between lateral profiles of current density and optical intensity. The optical device can be arranged as a diode laser or optical amplifier.

A part of a photonic integrated circuit comprises a semiconductor waveguide 216, an electrically conductive n-type semiconductor layer 214, and a photodiode 228. The waveguide 216 is formed on a substrate 212. The n-type semiconductor layer 214 is between the waveguide 216 and the substrate 212. A portion 230 of the n-type semiconductor layer 214 is removed by etching between the waveguide 216 and the substrate 212. The photodiode 228 is optically connected to the waveguide 216. In place of the portion 230 of the n-type semiconductor layer 214, material with an electrical conductivity less than that of the n-type semiconductor layer may be formed. The waveguide may comprise a semiconductor layer comprising an n-type semiconductor portion on a first surface of the n-type semiconductor layer and a p-type semiconductor portion on a second surface of the n-type semiconductor layer. An intrinsic semiconductor layer may be formed on the semiconductor layer and a p-type semiconductor layer may be formed on the intrinsic semiconductor layer, the intrinsic semiconductor layer being between the semiconductor layer and the p-type semiconductor layer and the semiconductor layer being between the intrinsic semiconductor layer and the electrically conductive n-type semiconductor layer.

To provide an optical phase modulation module comprising a laser light source 13 and an optical phase modulation element 16 integrated on one substrate, which reduces operational instability of the optical phase modulation element 16 due to rise in temperature of the laser light source 13.SOLUTION: An optical phase modulation module is provided, comprising a support substrate 10 having at least two electrical insulation layers with different thermal conductivities on a surface thereof, a light input unit 15 consisting of a laser light source 13 mounted on a first electrical insulation layer 11 with a higher thermal conductivity of the at least two electrical insulation layers, an optical phase modulation element 16 made of an electro-optical material and formed on a second electrical insulation layer 12 with a lower thermal conductivity of the at least two electrical insulation layers connected to the light input unit via a waveguide, and an optical phase modulation unit 17 consisting of a conductive semiconductor waveguide.SELECTED DRAWING: Figure 1

An integrated chip including a multi-level semiconductor waveguide and a multi-level conductor heater includes a base dielectric layer and a multi-level semiconductor waveguide layer on the base dielectric layer. The multi-level semiconductor waveguide layer has a first waveguide layer having a first width at a first height on the base dielectric layer. The multi-level semiconductor waveguide layer has a second waveguide layer having a second width greater than the first width at a second height on the base dielectric layer, the second height being less than the first height. The cladding layer is on the multi-level semiconductor waveguide layer. A multi-level conductor heater layer is on the cladding layer. The multi-level conductor heater layer has a first heater layer on the first waveguide layer. The multi-level conductor heater layer has a pair of second heater layers at the first height above the second waveguide layer and on opposite sides of the first waveguide layer.

A silicon-based hybrid integrated laser and chip, the silicon-based hybrid integrated laser comprising: a silicon substrate, an oxidation buried layer, a silicon optical waveguide, a dielectric layer, a III-V semiconductor waveguide, a plurality of metal electrodes, and one or more heat dissipation structures; along a first direction, the silicon substrate, the oxidation buried layer, the silicon optical waveguide, the dielectric layer, and the III-V semiconductor waveguide are stacked; the III-V semiconductor waveguide comprises an N-type semiconductor, a multiple quantum well active layer, and a P-type semiconductor stacked along the first direction, and the N-type semiconductor is in conductive connection with the metal electrode; the heat dissipation structure is accommodated in the oxidation buried layer and the dielectric layer, one end of the heat dissipation structure along the first direction is in thermal connection with the metal electrode, and the other end of the heat dissipation structure along the first direction is in thermal connection with the silicon substrate. The silicon-based hybrid integrated laser and chip provided by the embodiments of the present application can improve the heat dissipation and communication performance of the chip in which the silicon-based hybrid integrated laser is located.

A method of modifying a photonic chip having a semiconductor waveguide is described. The method generally has directing a focus of a correction laser beam into a portion of the photonic chip, the portion being one of a portion proximate to the semiconductor waveguide and a portion within the semiconductor waveguide, the correction laser beam having a center wavelength greater than a bandgap wavelength of the semiconductor waveguide, the guide modifies an effective refractive index of a portion of the semiconductor waveguide; performing a test routine on the semiconductor waveguide, including determining a parameter indicative of a performance of the semiconductor waveguide; and upon determining that the parameter does not match a reference parameter associated with a reference photonic chip, repeating the steering and the test routine until the parameter matches the reference parameter within a given tolerance.

The present invention discloses a controllable wavelength laser simulation device and simulation method for an optical module, which relates to the laser of the optical module and includes a resonant cavity unit, and also includes a PN semiconductor waveguide; the resonant cavity unit has an annular structure, the PN semiconductor waveguide has an annular structure with the same outer diameter size as that of the resonant cavity unit, and the PN semiconductor waveguide is horizontally and fixedly connected with the resonant cavity unit to form a shape structure. In the present invention, on the one hand, the output part of the laser uses a PN semiconductor waveguide with a variable refractive index and an annular structure, and the light of a required specific wavelength can be screened out by changing the magnitude of the input current, further improving the emission stability of the laser; on the other hand, the resonant cavity unit has an annular structure, and the photons can simulate total reflection therein, improving the utilization rate of the photons, and the filtered stray light can continue to excite the gain medium to generate photons, further improving the working efficiency of the laser.

A structure 10 for a photonic integrated circuit comprising a substrate 103, a semiconductor waveguide 101, and a metal layer 111. The semiconductor waveguide 101 is on a first portion of the substrate 103-1, the first portion 103-1 between a second portion of the substrate 103-2 and a third portion of the substrate 103-3, a length of the semiconductor waveguide 101 corresponding with a light propagation axis LPA between a first end of the semiconductor waveguide (figure 1, 102a) and a second end of the semiconductor waveguide (figure 1, 102b). The metal layer 111 spans between the second portion 103-2 and the third portion 103-3 of the substrate 103 and is configured to at least partially enclose the semiconductor waveguide 101 between the metal layer 111 and the first portion of the substrate 103-1 substantially along the length of the semiconductor waveguide 101.

The invention relates to an optoelectronic component (1) suitable for integration into an optoelectronic circuit, the component (1) comprising: - a III-V semiconductor membrane comprising: • a P-doped layer (2) called P layer; • an intrinsic layer (3) deposited on the P layer (2); and • an N-doped layer called N layer deposited on the intrinsic layer (3); - an asymmetric photonic-crystal waveguide (6, 16, 26) called PhC waveguide formed in the membrane by a two-dimensional photonic crystal on one longitudinal side and by a total internal reflection face on the other longitudinal side; - electrical contacts (10, 11) arranged respectively on either side of the PhC waveguide (6, 16, 26) in the plane of the membrane, suitable for injecting charge carriers laterally relative to the membrane into the PhC waveguide (6, 16, 26); the layers (2, 3, 4) being arranged so that the intrinsic layer and the N layer (3, 4) only partially cover the P layer (2), forming a lateral face (5) extending perpendicularly from the surface of the P layer (2), part of the lateral face (5) forming the total internal reflection face of the PhC waveguide; the PhC waveguide (6, 16, 26) being arranged to be evanescently coupled to a passive semiconductor waveguide (12) in at least one coupling region.

A semiconductor photonic device includes a semiconductor waveguide, a cladding structure surrounding the semiconductor waveguide, and an optical isolation structure disposed in the cladding structure. A top surface of the optical isolation structure is lower than a top surface of the semiconductor waveguide, and a bottom surface of the optical isolation structure is higher than a bottom surface of the semiconductor waveguide.

A method for fabricating a sensor comprises: (a) providing a wafer comprising a substrate, a dielectric layer on the substrate, and a semiconductor adlayer on the dielectric layer; (b) enacting microlithographic processing on the semiconductor adlayer to define: (i) a curved and elongate semiconductor waveguide confined to the dielectric layer, (ii) an in-coupling window arranged at a first end of the waveguide and configured to couple optically to an optical source, and (iii) an out-coupling window arranged at a second end of the waveguide and configured to couple optically to an optical detector; and (c) selectively etching the dielectric layer to define: (iv) a first dielectric region that supports and encloses the first end of the waveguide; (v) a second dielectric region that supports and encloses the second end of the waveguide; and (vi) a third dielectric region that supports but does not enclose a middle segment of the waveguide.