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83 results about "Semiconductor waveguides" patented technology
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Single-mode vertical integration of active devices within passive semiconductor waveguides, a method and its applications for use in planar wdm components
InactiveUS20040096175A1Improve manufacturabilityOptical waveguide light guideSemiconductor devicesSemiconductor materialsCommunications system
The invention discloses a method for monolithic integration of active devices within passive semiconductor waveguides and the application of this method for use in InP-based planar wavelength division multiplexing components of optical communication systems. The epitaxial device is grown in a single run and comprises a number of layers, such that the lower part of the structure acts as a single mode passive waveguide while the upper part of the structure contains a planar PIN diode. The PIN structure is present only in the active waveguide portion and absent in all the passive waveguide portions. The active and passive waveguide portions have substantially similar guiding properties with the exception of a mode tail above a top surface of the passive waveguide portion within the active waveguide portion. As a result, an optical signal portion penetrates the I-layer of the PIN structure and interacts with semiconductor material therein for actively affecting an intensity of the optical signal with no substantial changes in guiding properties of the semiconductor waveguide. Embodiments of invention in the form of monolithically integrated waveguide photodetector, electro-absorptive attenuator and semiconductor optical amplifier are disclosed in terms of detailed epitaxial structure, layout and performance characteristics of the device.
Owner:ENABLENCE
Integrated dielectric waveguide and semiconductor layer and method therefor
ActiveUS20150226918A1Low costReduce disadvantagesSemiconductor/solid-state device manufacturingOptical waveguide light guideHydrogenSemiconductor waveguides
A method for realizing a semiconductor waveguide and an ultra-low-loss dielectric waveguide disposed on the same substrate is disclosed. The method includes forming a partial dielectric waveguide structure on the substrate, wherein the dielectric waveguide is annealed to reduce hydrogen incorporation, and wherein the top cladding of the dielectric waveguide is only partially formed by a first dielectric layer. A second substrate comprising a semiconductor layer having a second dielectric layer disposed on its top surface is bonded to the first substrate such that the first and second dielectric layers collectively form the complete top cladding for the dielectric waveguide. The second substrate is then removed and the semiconductor layer is patterned to define the semiconductor waveguide core.
Owner:RGT UNIV OF CALIFORNIA
Vertical integration of active devices within passive semiconductor waveguides
InactiveUS7095938B2Optical waveguide light guideSemiconductor devicesElectricitySemiconductor materials
Owner:ENABLENCE
Semiconductor waveguide based high speed all optical wavelength converter
A semiconductor-based all optical wavelength converter is disclosed. An apparatus according to aspects of the present invention includes an optical waveguide disposed in semiconductor material. An optical pump source is optically coupled to direct an optical pump beam having a first wavelength into the optical waveguide. The optical waveguide is further optically coupled to receive an input optical beam having a second wavelength. The optical waveguide is optically coupled to generate an output optical beam having a third wavelength in response to the optical pump beam and the input optical beam in the optical waveguide. A diode structure is disposed in the optical waveguide. The diode structure includes at least P and N regions. The diode structure is biased to generate an electric field to remove free carriers from an optical path through the optical waveguide generated in response to two photon absorption in the optical waveguide.
Owner:INTEL CORP
High speed semiconductor waveguide phase-shifter
ActiveUS20060045522A1Increase speedReduce light lossOptical multiplexOptical waveguide light guidePotential wellLow voltage
A semiconductor waveguide includes a section containing free charge, either electrons or holes, which can be steered into or removed from the path of the beam under the control of electrical signals. The mobile charges come from a potential well which may be either filled or depleted under electrical control. When the well is filled, the charges speed the beam propagation, introducing a phase change. When the well is emptied the beam propagates with extra delay. The phase shifter allows very high speed modulation of the beam using low voltage and low power electronics. The device can be created using standard silicon processing techniques, and integrated with other optical components such as splitters and combiners to create amplitude modulators, attenuators and other optical devices.
Owner:INFRARED NEWCO +2
Temperature control device for optoelectronic devices
ActiveUS20110007761A1Improve performanceThermoelectric device manufacture/treatmentSemiconductor/solid-state device manufacturingDiffusionTemperature control
Current may be passed through an n-doped semiconductor region, a recessed metal semiconductor alloy portion, and a p-doped semiconductor region so that the diffusion of majority charge carriers in the doped semiconductor regions transfers heat from or into the semiconductor waveguide through Peltier-Seebeck effect. Further, a temperature control device may be configured to include a metal semiconductor alloy region located in proximity to an optoelectronic device, a first semiconductor region having a p-type doping, and a second semiconductor region having an n-type doping. The temperature of the optoelectronic device may thus be controlled to stabilize the performance of the optoelectronic device.
Owner:GLOBALFOUNDRIES US INC
Semiconductor photonoic nano communication link method
InactiveUS7907848B1Improved photonic modulationPromote absorptionSemiconductor/solid-state device manufacturingFibre transmissionElectro-absorption modulatorSignal on
An optical signal low energy method for coupling electrical signals on-chip between component circuits of for example a CMOS circuit array. The described coupling method employs infrared signals communicated along a nano-scale resonant semiconductor waveguide between for example PIN diode signal transducers. The coupling may employ an electrically pumped laser, an electro absorption modulator and a photodetector all for typically the 1.5 to 2.0 micrometer spectral region with each formed using for example PIN heterodiode semiconductor devices. Each of these three devices includes active semiconductor crystal material situated in a resonator within a strip waveguide. The resonator is defined by two fabricated mirrors having a tapered location one dimensional photonic crystal lattice of oxide hole or slot apertures. Each semiconductor device is for example a heterodiode pumped or controlled by laterally disposed wings enclosing the resonator to form a lateral PIN structure for current injection or high E-field generation. CMOS compatible ten gigabit per second signals of low energy use per transmitted bit are achieved.
Owner:AIR FORCE US SEC THE THE
Optical phase modulator and optical phase modulating device
ActiveUS20110064351A1Reduce the impactReduce impactCoupling light guidesElectromagnetic transmissionSemiconductor waveguidesMach–Zehnder interferometer
The optical phase modulator of the present invention comprises: a main Mach-Zehnder interferometer having first and second main optical waveguide path arms, and whose initial phase difference in the used wavelength is π; a first sub Mach-Zehnder interferometer having first and second sub optical waveguide path arms that are formed in said first main optical waveguide path arm, and whose initial phase difference in the used wavelength is 0; and a second sub Mach-Zehnder interferometer having third and fourth sub optical waveguide path arms that are formed in said second main optical waveguide path arm, and whose initial phase difference in the used wavelength is 0. Of each of the main optical waveguide path arms and first through fourth sub optical waveguide path arms, at least the portions where high-frequency electrodes are formed is constructed using semiconductor waveguide paths, and are capable of reducing the effects of frequency chirping caused by an orthogonal component that occurs due to light absorption in the semiconductor.
Owner:FURUKAWA ELECTRIC CO LTD
Ferromagnetic-semiconductor composite isolator and method
InactiveUS7065265B2Low costReliably and efficiency interfacingMaterial analysis by optical meansMicroscopesUltrasound attenuationOptical isolator
An exemplary optical isolator, such as a magnetic-semiconductor composite optical isolator, and method for making the same, is provided that includes a semiconductor waveguide and a magnetic-semiconductor composite layer. The semiconductor waveguide includes a guide layer, a first clad layer and a second clad layer. The guide layer includes one or more layers with a first end, a second end, a top, and a bottom, the guide layer allows a light wave incident the first end of the guide layer to propagate in a positive propagation direction, and allows a light wave incident the second end of the guide layer to propagate in a negative propagation direction. The first clad layer and the second clad layer are provided, respectively, relative to the bottom and the top of the guide layer, and the second clad layer has a thickness to allow an optical field penetration through the second clad layer. The magnetic-semiconductor composite layer is provided in the presence of a magnetic field oriented in a desired direction and is positioned relative the second clad layer and at a thickness and index of refraction to receive the optical field penetration through the second clad layer and to attenuate a light wave that propagates in the negative propagation direction more than the attenuation of a light wave that propagates in the positive propagation direction. The magnetic-semiconductor composite optical isolator may be integrated with a semiconductor laser, such as on the same semiconductor substrate.
Owner:KELTON CAPITAL L L C
Quantum dot based semiconductor waveguide devices
ActiveUS7769062B2High optical signal-to-noise ratioBroadened gain spectrumLaser detailsNanoopticsSemiconductor waveguidesQuantum dot
Methods and devices for providing a multiwavelength laser which may be used for multicasting and other optical communications uses. The present invention provides a quantum dot based multiwavelength laser with a monolithic gain block. The Fabry-Perot gain block has both upper and lower InP cladding layers. The laser system has a middle quantum dot layer with multiple stacked layers of InAs quantum dots embedded in InGaAsP. When provided with a CW injection current, the laser system produces an output spectra with equally spaced multiple emission peaks. With an input optical data signal applied to the laser system, the laser system duplicates the data in the input signal across multiple different wavelengths.
Owner:CANADA NAT RES COUNCIL OF
Optical integrated circuit and optical integrated circuit module
ActiveUS7561765B2Enhanced couplingEasy to implementOptical waveguide light guideAudio power amplifierSemiconductor waveguides
An optical integrated circuit 1 according to the present invention includes a planar lightwave circuit 2, and a semiconductor element 3, which are fixed at one contact surface 12. A semiconductor optical amplifier (SOA) 9 is formed on a semiconductor substrate 8. A semiconductor waveguide 10 and a semiconductor waveguide 11 are formed on an input side and an output side of SOA 9, respectively. The semiconductor waveguide 11 has a turnaround portion 11a turned around on the semiconductor substrate 8. Respective ends of the optical waveguides 5 and 6 on a PLC platform 4 and respective ends of semiconductor waveguides 10 and 11 are optically coupled with each other at the contact surface 12.
Owner:FURUKAWA ELECTRIC CO LTD
System comprising optical semiconductor waveguide device
InactiveUS6888863B1Simpler and less-expensive to packageWide bandwidthLaser optical resonator constructionCladded optical fibreGratingExternal cavity laser
An improved optical communication system is provided, the system particularly suited for so-called short-haul applications, e.g., applications involving transmission over distances less than 100 km, such as metro applications. The system uses an external cavity laser made up of a gain medium that comprises an active region, a beam expanding region, and an antireflective layer, an optical waveguide located adjacent the gain medium, and a Bragg grating integral with or coupled to the optical waveguide. The medium and the optical waveguide, due to the beam expanding region, exhibit a coupling efficiency of at least 40%, advantageously at least 50%, even in the absence of coupling optics, and the laser is configured and operated to emit at least two modes.
Owner:LUCENT TECH INC
Integrated waveguide gratings by ion implantation
Integrated semiconductor waveguide gratings, methods of manufacture thereof and methods of apodizing thereof are described. A semiconductor waveguide grating includes a substrate, a cladding layer disposed on the substrate, a guide structure that includes a plurality of discrete transverse sections implanted with ions disposed between adjacent transverse sections substantially free of implanted ions.
Owner:INTEL CORP
Integrated dielectric waveguide and semiconductor layer and method therefor
ActiveUS9285540B2Low costReduce disadvantagesCoupling light guidesOptical waveguide light guideHydrogenSemiconductor waveguides
A method for realizing a semiconductor waveguide and an ultra-low-loss dielectric waveguide disposed on the same substrate is disclosed. The method includes forming a partial dielectric waveguide structure on the substrate, wherein the dielectric waveguide is annealed to reduce hydrogen incorporation, and wherein the top cladding of the dielectric waveguide is only partially formed by a first dielectric layer. A second substrate comprising a semiconductor layer having a second dielectric layer disposed on its top surface is bonded to the first substrate such that the first and second dielectric layers collectively form the complete top cladding for the dielectric waveguide. The second substrate is then removed and the semiconductor layer is patterned to define the semiconductor waveguide core.
Owner:RGT UNIV OF CALIFORNIA
Integrated waveguide gratings by ion implantation
InactiveUS20030206698A1Diffraction gratingsCoupling light guidesSemiconductor waveguidesIon implantation
Integrated semiconductor waveguide gratings, methods of manufacture thereof and methods of apodizing thereof are described. A semiconductor waveguide grating includes a substrate, a cladding layer disposed on the substrate, a guide structure that includes a plurality of discrete transverse sections implanted with ions disposed between adjacent transverse sections substantially free of implanted ions.
Owner:INTEL CORP
Optical integrated circuit and optical integrated circuit module
ActiveUS20080240645A1Enhanced couplingEasy to implementOptical waveguide light guideAudio power amplifierSemiconductor waveguides
An optical integrated circuit 1 according to the present invention includes a planar lightwave circuit 2, and a semiconductor element 3, which are fixed at one contact surface 12. A semiconductor optical amplifier (SOA) 9 is formed on a semiconductor substrate 8. A semiconductor waveguide 10 and a semiconductor waveguide 11 are formed on an input side and an output side of SOA 9, respectively. The semiconductor waveguide 11 has a turnaround portion 11a turned around on the semiconductor substrate 8. Respective ends of the optical waveguides 5 and 6 on a PLC platform 4 and respective ends of semiconductor waveguides 10 and 11 are optically coupled with each other at the contact surface 12.
Owner:FURUKAWA ELECTRIC CO LTD
Quantum dot based semiconductor waveguide devices
Methods and devices for providing a multiwavelength laser which may be used for multicasting and other optical communications uses. The present invention provides a quantum dot based multiwavelength laser with a monolithic gain block. The Fabry-Perot gain block has both upper and lower InP cladding layers. The laser system has a middle quantum dot layer with multiple stacked layers of InAs quantum dots embedded in InGaAsP. When provided with a CW injection current, the laser system produces an output spectra with equally spaced multiple emission peaks. With an input optical data signal applied to the laser system, the laser system duplicates the data in the input signal across multiple different wavelengths.
Owner:CANADA NAT RES COUNCIL OF
Semiconductor optical integrated device
InactiveUS20150331298A1Easy to understandSemiconductor lasersNon-linear opticsSemiconductor waveguidesWaveguide
A semiconductor optical integrated device including: a substrate having a first area, a second area and a third area arranged in a waveguiding direction; a laser portion disposed on the third area the laser portion including a laser waveguide and a heater thereon; a semiconductor waveguide disposed on the second area, the semiconductor waveguide including a core layer and a cladding layer disposed on the core layer; a Mach-Zehnder modulator portion disposed on the first area, the Mach-Zehnder modulator portion including a first arm and a second arm; a buried region embedding the laser waveguide, the semiconductor waveguide, and the first and second arms; a groove disposed on the second area, the groove extending in a direction intersecting the waveguiding direction to across the semiconductor waveguide to the buried region; and a resin body disposed on the Mach-Zehnder modulator portion. The laser portion is optically coupled to the Mach-Zehnder modulator portion via the semiconductor waveguide. The groove has a bottom on a surface of the core layer of the semiconductor waveguide.
Owner:SUMITOMO ELECTRIC IND LTD
Methods of producing strain in a semiconductor waveguide and related devices
ActiveUS9261647B1Increase strainLow sectionOptical waveguide light guideNon-linear opticsPhotonicsWaveguide
Quasi-phase matched (QPM), semiconductor photonic waveguides include periodically-poled alternating first and second sections. The first sections exhibit a high degree of optical coupling (abbreviated “X2”), while the second sections have a low X2. The alternating first and second sections may comprise high-strain and low-strain sections made of different material states (such as crystalline and amorphous material states) that exhibit high and low X2 properties when formed on a particular substrate, and / or strained corrugated sections of different widths. The QPM semiconductor waveguides may be implemented as silicon-on-insulator (SOI), or germanium-on-silicon structures compatible with standard CMOS processes, or as silicon-on-sapphire (SOS) structures.
Owner:NAT TECH & ENG SOLUTIONS OF SANDIA LLC
Hybrid integrated optical module
InactiveUS20110110622A1Coupling efficiency is highSuppressing connection lossCoupling light guidesOptical waveguide light guideOptical ModuleSemiconductor waveguides
The present invention provides a hybrid integrated optical module having a high coupling efficiency by suppressing a connection loss between waveguides. A hybrid integrated optical module according to an embodiment of the present invention is an optical module which integrates a semiconductor chip and a PLC chip. The semiconductor chip has a semiconductor waveguide and is mounted on a Si bench. The PLC chip includes a PLC substrate and an optical waveguide formed on the PLC substrate. An end face of the semiconductor chip protrudes from an end face of the Si bench toward the PLC chip side by a protrusion amount X. Gap adjustment (adjustment of a distance D) between the semiconductor waveguide and the optical waveguide becomes possible by setting a position where the end face of the semiconductor chip is brought into contact with an end face of the PLC chip to be a reference position (zero point).
Owner:FURUKAWA ELECTRIC CO LTD
Semiconductor polarization mode converter having a diffraction grating
InactiveUS6104850ALaser optical resonator constructionOptical resonator shape and constructionSelective reflectionSemiconductor waveguides
A semiconductor TE / TM mode converter comprises a semiconductor waveguide layer including a compressive-strained first region and a tensile-strained second region, and a diffraction grating formed on the first region. The first region and second region are reversed-biased and forward-biased, respectively. TE mode light incident on the facet of the first region generates TM mode light outgoing from the facet of the second region. The diffraction grating in the first region has selective reflectance against TM mode light and reflects the TM mode light toward the second region, to lower the lasing threshold of TM mode light and raise the conversion efficiency.
Owner:NEC CORP
High speed semiconductor waveguide phase-shifter
ActiveUS7308160B2Increase speedReduce light lossOptical multiplexOptical waveguide light guidePotential wellLow voltage
Owner:INFRARED NEWCO +2
High-speed semiconductor waveguide phase-shifter
An optical phase shifter (100) comprises a semiconductor waveguide (105) includes a core region (116) and a doped region (115a, 115b) containing free charges (electrons or holes), which can be steered into or removed from the wave guide, where an optical beam (150) propagates. A semiconductor structure (PN junction 112, 114) allows the control of the amount of free charges in the doped region, which constitutes a potential well. When the well is filled, the charges speed the beam propagation, introducing a phase change. When the well is emptied, (under application of a reverse bias to the junction 112, 114), the beam propagates with extra delay. The phase shifter allows very high speed modulation of the beam using low voltage and low power electronics. The device can be created using standard silicon processing techniques, and integrated with other optical components such as splitters and combiners to create amplitude modulators, attenuators and other optical devices.
Owner:LUCENT TECH INC
Integrated photonic polarisation rotator and splitter and related method
ActiveUS20170315294A1CompactMore compactOptical waveguide light guideSemiconductor waveguidesPhotonics
In an integrated polarization splitting and rotating photonic device comprising at least one first waveguide; a second waveguide, both said waveguides extending from an input section to an output section; a top cladding; a bottom cladding and a symmetry-breaking layer so as to form an optical guiding structure in a wafer chip, said top and bottom claddings extending throughout the whole optical guiding structure sandwiching said waveguides therebetween, said symmetry-breaking layer extends in the optical guiding structure at least over the whole guiding structure length, and, at the input section, the at least one first waveguide core has a predetermined width through the optical guiding structure to the output section, receiving an input light signal, and further, the second waveguide core, both at the input and the output section, has a width narrower than said predetermined width of the first waveguide core; so that the optical guiding structure guides a first mode substantially confined within said at least one first waveguide core and a second mode substantially confined within said second semiconductor waveguide core said first and said second modes having the same polarization at the output section.
Owner:CONSORZIO NAZI INTERUNIV PER LE TELECOMM (CNIT) +1
Method And System For A Vertical Junction High-Speed Phase Modulator
Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.
Owner:CISCO TECH INC
Method and system for all-optical signal regeneration
InactiveUS7010235B2Increase the injection currentImprove signal-to-noise ratioTime-division optical multiplex systemsCoupling light guidesPhase shiftedSemiconductor waveguides
A system for all-optical signal regeneration is provided, which makes it possible to exhibit desired intensity noise suppressing function with respect to pulsed input signal light without increasing the injection current of semiconductor optical amplifiers even if the magnitude of nonlinear phase shift of the input signal light is less than π. The output light of the first delay interference unit is subjected to phase shift in the first nonlinear semiconductor waveguide and then, applied to the second delay interference unit along with the clock light. In the second delay interference unit, the first interfered light is generated from the output light while the second interfered light is generated from the clock light having an opposite logic to the input light. The second interfered light is subjected to phase shift by the first interfered light in the second nonlinear semiconductor waveguide and then, applied to the third delay interference unit. The third interfered light having an opposite logic to the input light is generated from the second interfered light in the third delay interference unit. The third interfered light is the output light of the system.
Owner:NEC CORP
Temperature Feedback for Electro-optic Phase-shifters
ActiveUS20190227351A1Radiation pyrometryThermometers using electric/magnetic elementsPhase shiftedPhotonic Chip
A transmitter for an optical device includes semi-conductor waveguides, each incorporating an electro-optic phase-shifter in the semi-conductor waveguide that is operable to change the refractive index of the waveguide to thereby introduce a phase shift in the light propagated through the waveguide. The electro-optic is connected to a phase shift controller and to a temperature measurement component, such as a PTAT circuit, that is integrated into the electronic or photonic chip carrying the waveguide. Temperature measurement by the measurement component can be multiplexed with the normal operation of the phase-shifter so that the temperature measurement function does not interfere with the phase shifting function.
Owner:ROBERT BOSCH GMBH
Optical waveguide with layered core and methods of manufacture thereof
InactiveUS6864512B2Reduce dispersionSolid-state devicesSemiconductor/solid-state device manufacturingSemiconductor waveguidesNitrogen
A semiconductor waveguide is disclosed which includes a substrate coated with a cladding. A core is embedded in the cladding. The core includes a plurality of discreet stacked layers of core material surrounded by cladding material. The cladding and core layers each include silica and silicon nitride with the core layers having a higher nitrogen content than the cladding material. The core is fabricated by carefully manipulating the process parameters of a PECVD process.
Owner:INTEL CORP
Optical modulation device
InactiveUS20180039152A1Improve characteristic impedanceImproving Impedance AccuracyLaser detailsElectromagnetic transmissionAudio power amplifierSemiconductor waveguides
An optical modulation device includes: a Mach-Zehnder modulator including a semiconductor waveguide; a plurality of phase modulators that are spaced from each other; a first amplifier that is coupled with an input transmission line transmitting an electrical signal, has an input impedance substantially equal to a characteristic impedance of the input transmission line; a first interconnection that is coupled to the first amplifier and transmits the electrical signal to a first end of one of the plurality of phase modulators that is provided on an input side of the Mach-Zehnder modulator; a second interconnection that is coupled to the first amplifier and transmits the electrical signal to a first end of the other of the plurality of phase modulators that is provided on an output side of the Mach-Zehnder modulator; and a plurality of termination resistors respectively coupled to second ends of the plurality of phase modulators.
Owner:SUMITOMO ELECTRIC IND LTD
Photonic integrated device with dielectric structure
InactiveUS20170141539A1Slow changeProvide performanceLaser detailsLaser optical resonator constructionSemiconductor waveguidesPhotonics
A photonic integrated device (PID) for generating single and multiple wavelength optical signals is provided. The PID includes first and second reflective structures having first and second predetermined reflectivities, respectively. A common waveguide is optically coupled to the first reflective structure, and at least one semiconductor waveguide is optically coupled to the second reflective structure. The PID further includes at least one active gain region that is disposed between the first and second reflective structures. In various embodiments, the PID includes at least one of a dielectric waveguide based wavelength dependent element and a dielectric Bragg stack.
Owner:POET TECH
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