6 results about "Waveguide photodetector" patented technology

A waveguide photodetector includes a slab over a substrate, first and second contact portions protruding upward from the slab, and a ridge protruding upward from the slab between the first and second contact portions. A first semiconductor layer is over the substrate and includes a first doped region in the first contact portion, a second doped region in the slab between the first contact portion and the ridge, a third doped region and a sixth doped region in the ridge, a fourth doped region in the second contact portion, a fifth doped region in the slab between the second contact portion and the ridge, a first intrinsic region between the sixth and third doped regions, and a second intrinsic region between the sixth and fifth doped regions. A second semiconductor layer is over the first intrinsic region and between the sixth and third doped regions.

The invention relates to the technical field of photoelectric detectors, in particular to a waveguide type photoelectric detector based on a double-distributed Bragg reflector resonant cavity. The ridge waveguide is etched to the n-type doped layer of the epitaxial layer; the electrode is arranged at the middle section of the ridge waveguide; the double distributed Bragg reflector resonant cavity structure DBR comprises a first distributed Bragg reflector and a second distributed Bragg reflector, and the first distributed Bragg reflector and the second distributed Bragg reflector are arranged on the two sides of the area where the electrodes are located respectively. The first distributed Bragg reflector allows light to be transmitted from the incident end to the emergent end and reflects light from the emergent end to the incident end at the same time, so that a resonant cavity is formed by the first distributed Bragg reflector and the second distributed Bragg reflector. Therefore, the problem of tradeoff between responsivity and bandwidth in a traditional photoelectric detector is solved, and the problems of insufficient manufacturing flexibility of a DBR structure and the like are solved.

The present invention provides an antenna-integrated waveguide photodetector and system, and a method for transmitting a signal, including a photodetector, N optical waveguides, and an antenna, where N is a positive integer, the antenna being provided on a substrate, and a feed gap being provided on the symmetrical axis of both arms of the antenna, the photodetector being provided within the feed gap, and the N optical waveguides being formed on the substrate, the photodetector being connected to the optical waveguides to acquire an optical carrier radio frequency signal transmitted through the optical waveguides. By providing a feed gap on the symmetrical axis of both arms of the antenna and providing the photodetector within the feed gap, the present invention allows the antenna and the photodetector to be integrated on the same device of the same chip, thereby improving the integration degree of optical integrated circuits and systems.

A waveguide photodetector for reducing retro-reflection and increasing bandwidth is provided. The waveguide photodetector comprises: a waveguide photodiode having: a main waveguide, an absorbing waveguide integrated with the main waveguide, and an input facet at the absorbing waveguide; and an input waveguide for transmitting light to the waveguide photodiode, an input angle between the input waveguide and the input facet comprising an acute interface angle.

A waveguide photodetector includes a slab over a substrate, first and second contact portions protruding upward from the slab, and a ridge protruding upward from the slab between the first and second contact portions. A first semiconductor layer is over the substrate and includes a first doped region in the first contact portion, a second doped region in the slab between the first contact portion and the ridge, a third doped region and a sixth doped region in the ridge, a fourth doped region in the second contact portion, a fifth doped region in the slab between the second contact portion and the ridge, a first intrinsic region between the sixth and third doped regions, and a second intrinsic region between the sixth and fifth doped regions. A second semiconductor layer is over the first intrinsic region and between the sixth and third doped regions.

The application relates to the field of photoelectric technology and provides a monolithic integrated resonant cavity enhanced waveguide photodetector which comprises a semi-insulating substrate, a waveguide photodetector epitaxial layer, an N metal electrode and a P metal electrode; the waveguide photodetector epitaxial layer comprises a waveguide layer and a photodetector epitaxial layer; the semi-insulating substrate, the waveguide layer, the photodetector epitaxial layer and the P metal electrode are sequentially arranged along the Z-axis direction; the N metal electrode is connected with the waveguide layer; the waveguide photodetector epitaxial layer has a first end and a second end which are opposite to each other along the X-axis direction; the photodetector epitaxial layer is provided with a first groove; the waveguide photodetector epitaxial layer is provided with a second groove; the first groove is arranged close to the first end; the second groove is arranged close to the second end; and the first groove and the second groove are arranged along the Y-axis direction; the first groove and the second groove are arranged to form a resonant cavity composed of a distributed Bragg reflector, so that good responsivity and relatively fast response speed can be simultaneously satisfied.