3 results about "Waveguide photodetector" patented technology

The present invention provides an antenna-integrated waveguide photodetector and system, and a method for transmitting a signal, including a photodetector, N optical waveguides, and an antenna, where N is a positive integer, the antenna being provided on a substrate, and a feed gap being provided on the symmetrical axis of both arms of the antenna, the photodetector being provided within the feed gap, and the N optical waveguides being formed on the substrate, the photodetector being connected to the optical waveguides to acquire an optical carrier radio frequency signal transmitted through the optical waveguides. By providing a feed gap on the symmetrical axis of both arms of the antenna and providing the photodetector within the feed gap, the present invention allows the antenna and the photodetector to be integrated on the same device of the same chip, thereby improving the integration degree of optical integrated circuits and systems.

A waveguide photodetector for reducing retro-reflection and increasing bandwidth is provided. The waveguide photodetector comprises: a waveguide photodiode having: a main waveguide, an absorbing waveguide integrated with the main waveguide, and an input facet at the absorbing waveguide; and an input waveguide for transmitting light to the waveguide photodiode, an input angle between the input waveguide and the input facet comprising an acute interface angle.

A waveguide photodetector includes a slab over a substrate, first and second contact portions protruding upward from the slab, and a ridge protruding upward from the slab between the first and second contact portions. A first semiconductor layer is over the substrate and includes a first doped region in the first contact portion, a second doped region in the slab between the first contact portion and the ridge, a third doped region and a sixth doped region in the ridge, a fourth doped region in the second contact portion, a fifth doped region in the slab between the second contact portion and the ridge, a first intrinsic region between the sixth and third doped regions, and a second intrinsic region between the sixth and fifth doped regions. A second semiconductor layer is over the first intrinsic region and between the sixth and third doped regions.