1808results about How to "Improve coupling efficiency" patented technology

The invention discloses a grating coupler, which sequentially comprises an upper cladding, a grating layer, a wave guide layer and a lower cladding from top to bottom. The grating layer adopts a binary blazed grating that is a one-dimension binary blazed grating or a two-dimension binary blazed grating. The binary blazed grating coupler provided by the invention can obtain high coupling efficiency and realize complete vertical coupling; besides, the preparation is easy. By adjusting a grating parameter, the grating coupler realizes that incident light is respectively coupled in different wave guides according to different polarization states or wave lengths, thus offering effective ways for polarization beam splitting, wavelength division multiplex, etc.

The invention relates to a fiber coupling module of a high-power semiconductor laser, which comprises a plurality of single-tube semiconductor lasers with the same wavelength in the same polarization state, beam collimation lenses, a glass flat plate, reflecting prisms and a focusing device, wherein expect one path of the single-tube semiconductor lasers, the other single-tube semiconductor lasers are all parallel to an axis x and arrayed in a ladder shape; the beam collimation lenses are arranged in front of each single-tube semiconductor laser, and the light emitted by each single-tube laser passes through a beam collimation lens and then passes through a reflecting prism; each reflecting prism keeps consistent with a single-tube laser corresponding to the reflecting prism on the horizontal height; the light emitted by the plurality of single-tube lasers is transmitted to the focusing device through reflecting; and beams emitted by the single-tube lasers arranged in the direction of an axis z is directly transmitted to the focusing device through gaps among the plurality of the reflecting prisms and then combined with other beams to focus together and then enter a fiber. In the invention, the distances of the welding positions of each single-tube laser become longer, and the high-power semiconductor laser fiber coupling module has easy welding, convenient debugging, good heat radiating effect and high coupling efficiency.

The invention provides an optical fiber coupling module of a platform-type turning and reflecting single-tube semiconductor laser and belongs to the technical field of laser; the optical fiber coupling module comprises a bearing platform (1), a plurality of groups of single-tube semiconductor lasers (2), a plurality of fast axis collimators (3), a plurality of slow axis collimators (4), a plurality of turning and reflecting prisms (5), an ordinary reflecting prism (7), a beam-combining prism (8), and fast/slow axis focusing lens combinations (9) and (10) and an optical fiber coupling head (12); each group of the single-tube semiconductor lasers comprises a plurality of the single-tube semiconductor lasers; each single-tube semiconductor laser corresponds to one fast axis collimator, one slow axis collimator and one turning and reflecting prism; all the optical devices are laid on the bearing platform without steps and pedestals; the light-emitting positions of the single-tube semiconductor lasers are located at the same height; the light beams emitted by the single-tube semiconductor lasers are subjected to the collimation, turning and reflection, beam-combination and focusing processes through the optical devices and finally are coupled to the optical fiber coupling head.

The invention discloses a single-core and multi-core fiber coupler and fiber access into rafah cone coupling method. It peels the ending coating layer of a single-core optical fibers and a multi-core fiber, direct financial with the fiber welding machine in stripping department, received and in the implementation of solder joint heating department fused biconical taper, monitoring optical power, when cone waist rafah small cone of light power distribution to the target, spectrophotometer stopping widening cone. The method is the technical characteristics of single-core fiber and multi-core fiber fusion welding, the solder joint implemented fused biconical taper, thus forming a cone of light energy distribution, optical power of distribution. The method can be single-core optical fiber distribution of power coupled multi-core optical fiber to each core, or multi-core fiber coupling of light waves to single-core fiber, to achieve optical spectrophotometer and cooperation functions.

The invention discloses a SiC crystal growing device, including vacuum chamber, graphite growing chamber, and induction coil, where the graphite chamber is coated with insulating material at a proper thickness, the induction coil is set outside the insulating material, they are all fixed in the vacuum chamber together, the vacuum chamber is set with an openable sealing cover and with a pumping hole for connecting with the vacuum pump. It eliminates the defect caused by the vacuum chamber wall interlaid between the induction coil and the crystal growing chamber, and can conveniently changes the size of the graphite growing chamger by adjusting the thickness of the heat preserving material to achieve the purpose of changing the size of the grown crystal; at the same time, can grow large-sized SiC crystal without a great change of equipment.

The invention discloses a silicon nanowire grating resonant enhanced photoelectric detector, which comprises a silicon substrate, a silicon oxide layer, an I-shaped mesa structure, a protective layer, a metal gate electrode and two photocurrent output metal electrodes, wherein the silicon oxide layer is manufactured on the silicon substrate; the I-shaped mesa structure is manufactured on the silicon oxide layer, two ends of the I-shaped mesa structure are provided with a P-type electrode and an N-type electrode, and a silicon nanowire grating resonant cavity structure is connected between the P-type electrode and the N-type electrode; the protective layer is manufactured on the surface and side faces of the I-shaped mesa structure, and electrode windows are formed on the P-type electrode and the N-type electrode at two ends of the I-shaped mesa structure; the metal gate electrode is manufactured on the protective layer of the silicon nanowire grating resonant cavity structure and is close to one side of the N-type electrode; and the two photocurrent output metal electrodes are manufactured in the electrode windows of the protective layer on the P-type electrode and the N-type electrode of the I-shaped mesa structure.

The package structure for a high-speed semiconductor light emission assembly comprises: a dish-type case with RF connector, a semiconductor refrigerator to control the work temperature of emission chip, a KOVAR metal heat sink, a medium heat sink substrate, a light emission device, a thermistor, a backlight detector, the metal wire to connect dc connection electrode and case pin, a coplanar waveguide transmission lie on medium substrate, and optical coupling assembly. Wherein, it uses BTF standard package form for dc terminals outside the case.

The invention discloses a display panel and a display device. The display panel is characterized in that bright dipping direction and color can be selected through coupling of special modes in a waveguide layer by grating coupling structures; reflective index of a liquid crystal layer can be regulated after voltage exerted on the liquid crystal layer is regulated through an electrode structure by setting the refractive index to be (no, ne) through the grating coupling structures, and display gray level is controlled. Due to the selection action of the grating coupling structures on the bright dipping direction, near-to-eye display capable of being monocular focus can be favorably realized. Light rays can be effectively coupled out from the waveguide layer through the grating couple structures for a few grating periods which are generally short, so that the pixel size can be quite small and high definition display is favorably displayed. Due to selection action of the grating coupling structures on the bright dipping color, color films can be omitted, and all parts can be formed by transparent materials so as to achieve highly-transparent transparency display and virtual/augmented reality display.

The invention discloses an electric tunable grating coupler. The electric tunable grating coupler comprises an SOI (Silicon On Insulator) substrate, an oblique incidence grating coupler, a P+ mixing area, an N+ mixing area, a pair of electrodes, a mode converter, a single mode ridge waveguide and a substrate gold reflecting mirror, wherein the SOI substrate comprises a silicon substrate, an oxideburying layer and a top silicon layer positioned at the upper position of the SOI substrate; the oblique incidence grating coupler is positioned on the top silicon layer positioned on the SOI substrate; the P+ mixing area is positioned in a panel area at one side of the oblique incidence grating coupler; the N+ mixing area is positioned in the panel area at the other side of the oblique incidencegrating coupler; the electrodes are positioned at the upper positions of the P+ mixing area and the N+ mixing area, are respectively connected with the P+ mixing area and the N+ mixing area through metal contact through holes and are used for loading electric signals; one end of the mode converter is provided with a wide waveguide, the mode converter is positioned at one end of the oblique incidence grating coupler, and the end of the mode converter, which is provided with the wide waveguide, is coupled with one end of the oblique incidence grating coupler; the single mode ridge waveguide andthe oblique incidence grating coupler are respectively positioned at two ends of the mode converter; and the substrate gold reflecting mirror is embedded in the silicon substrate positioned at the bottom part of the SOI substrate and is positioned below the oblique incidence grating coupler and the oxide burying layer.

The invention discloses an optical coupler, which comprises a reflection chamber, at least one light source and a light guide plate, wherein the reflection chamber is provided with one mouth, which comprises an upper surface, a low surface, a first side face, a second side face and an end face relative to the mouth, the light source is arranged on the end face, the side face of the light guide plate is conjugated with the mouth, and the light guide plate is thinner than the light source.

The invention discloses an inductance coupling coil, which comprises at least two groups of mutually nested coil windings with different diameters, wherein the upper surfaces of at least two groups of the coil windings in the coil windings are at planes with different heights for the convenience of obtaining plasmas which are distributed evenly. Besides, the invention also discloses a plasma processing device comprising a reaction chamber; a dielectric window is arranged on the upper part of the reaction chamber, and the inductance coupling coil is arranged above the dielectric window; and the inductance coupling coil is connected with a radio frequency power supply through a radio frequency matcher so as to obtain the plasmas distributed evenly in the reaction chamber. The inductance coupling coil and the plasma processing device can obtain the plasmas which are distributed evenly, and can obtain an excellent and even processing/handling result.

The invention relates to a Bragg refractive waveguide edge transmitting semiconductor laser with a low horizontal divergence angle, wherein the P electrode of the laser is placed on the top face of a cover layer and is electrically connected onto the cover layer; the N electrode is positioned on the back face of a substrate and is electrically connected to the substrate; a center cavity is positioned between an upper waveguide layer and a lower waveguide layer; an active area is inserted in the center cavity; a Bragg refractive waveguide formed by periodically distributing a plurality of layers of N-doped materials with a high refractive index and a low refractive index is adopted in the lower waveguide layer on; and a Bragg refractive waveguide formed by periodically distributing a plurality of layers of P-doped materials with a high refractive index and a low refractive index is adopted in the upper waveguide layer. The Bragg refractive waveguide edge transmitting semiconductor laser with the low horizontal divergence angle has the advantages that: effects such as catastrophic damage, hole burning, electric heat overburning, beam filamentization and the like on the end face of the traditional edge transmitting semiconductor laser can be effectively improved, and the laser can realize the large mode-volume and stable single-transverse-mode work because of the great gain loss difference between a basic mode and a high-order mode, the full wave at half maximum (FWHM) of the transverse far-field divergence angle of the laser can reach below 10 DEG.

The invention discloses a scanning type fingerprint identification and touch control integrated screen comprising a backlight light source, an optical waveguide, rasters, a LCD module, array sensors, an initialization detection area, a fingerprint detection area, and a lens system; the optical waveguide is arranged above the backlight light source; the raster is respectively arranged on bottom surfaces of two adjacent sides of the optical waveguide; the array sensor is respectively arranged on another two adjacent sides of the optical waveguide; the LCD module is arranged between the backlight light source and the optical waveguide; one side edge area of the optical waveguide is the fingerprint initialization detection area; the fingerprint detection area is located on a visual light emitting surface of the optical waveguide; the lens system is arranged between the array sensors and the rasters. The scanning type fingerprint identification and touch control integrated screen is safe, ultra thin, high in imaging quality, and low in cost.

The invention relates to a waveguide grating coupler with a distributed Bragg reflector. The coupler is made of silicon materials on an insulator and comprises a silicon substrate, a limiting layer, a top silicon layer and an optical fiber, wherein the limiting layer is made on the silicon substrate; the top silicon layer is made on the limiting layer; a diffraction grating is made on the surface of the top silicon layer; a reflection grating is made at one side of the diffraction grating; the other side of the diffraction grating is provided with a tapered waveguide with the length of about 80 micrometers; a submicrometer waveguide is arranged on the connecting point of the diffraction grating and the tapered waveguide; and one end of the optical fiber is close to the diffraction grating on the top silicon layer.

The invention provides a backlight module. The backlight module comprises a back board, a backlight source, a guide plate, a light guide plate, a reflective piece, an optical membrane set, a rubber frame and a baffle wall, wherein the backlight source is arranged in the back board; the light guide plate is arranged in the back board and is opposite to the backlight source; the reflective piece is arranged between the guide plate and the back board; the optical membrane set is arranged on the guide plate; the rubber frame is arranged on the back board; the baffle wall is arranged between the light guide plate and the rubber frame and is opposite to the backlight source; the trapezoidal baffle wall is provided with a bevel close to the backlight source; the bevel is provided with a reflective layer; and light incident to the baffle wall is reflected to the light guide plate by arranging the baffle wall with the reflective layer in a position opposite to the backlight source between the rubber frame and the light guide plate, so that the light is prevented from being refracted from a gap between the optical membrane set and the light guide plate to form a bright line, thereby the bright line problem of an incident side in a side incident backlight module is solved well. The backlight module provided by the invention has higher light coupling efficiency; and meanwhile, with the adoption of the backlight module, the brightness of the light guide plate is improved, brightness loss of light emitted by an LED (light emitting diode) light source is avoided, and the utilization ratio of the LED light source is improved.

The invention discloses a structured light illuminating microscopic imaging system based on an integrated photonic chip. The structured light illuminating microscopic imaging system comprises a light source, the integrated photonic chip, a sample containing table, a microobjective, a filter part, a photoelectric detector, a computer processing system and a control system. The light source is connected with the integrated photonic chip, the integrated photonic chip is arranged below the sample containing table, the microobjective is arranged above the sample containing table, the filter part is arranged above the microobjective, and the photoelectric detector is arranged above the filter part. A sample to be detected is fixed to the sample containing table, and light emitted by the light source irradiates the sample to be detected on the sample containing table after being processed by the integrated photonic chip. The computer processing system is connected with the sample containing table, the photoelectric detector and the control system. The integrated photonic chip is connected with the control system. According to the technical scheme, the system has the advantages of being small in size, compact in structure, high in system stability, high in solar energy utilization rate, high in imaging resolution ratio and the like, and is suitable for the real-time three-dimensional imaging study of living cells.

The invention relates to an optical fiber array for directly coupling with an array VSCEL (vertical cavity surface emitting laser) or PD (photoelectric detector) chip. The optical fiber array comprises a groove substrate, a gland substrate and an optical fiber belt clamped between the groove substrate and the gland substrate, wherein an end part of the optical fiber belt is protruded out of a plane jointly defined by the end face of the groove substrate and the end face of the gland substrate; and the end face of the optical fiber belt is an optical plane with a 45-degree inclined angle. When the optical fiber array is directly coupled with an optical waveguide integrated device, each optical fiber core is easily aligned with each pixel of the optical waveguide integrated device during the use process, the coupling operation is more convenient and the coupling efficiency is higher, because the end part of the optical fiber belt is ground and processed as a 45-degree optical plane according to the requirement and completely extends for an enough distance outside the end face of the optical fiber array and the obstruction of the groove substrate and the gland substrate on upper and lower sides to the laser beam is eliminated. The invention also provides a manufacturing method for the optical fiber array.

The present invention discloses a silicon waveguide spot size converter based on a multilayer polymer structure and a preparation method thereof. The silicon waveguide spot size converter based on themultilayer polymer structure and the preparation method thereof are applied to coupling of silicon nanowire optical waveguides and common single-mode fibers. The structure is made by employing an integrated photoelectron process method, on a silicon substrate on an insulator layer, a taper-type silicon waveguide is made, a lithography technology is employed to continuously nest three layers of combined taper-type optical waveguides with materials of SU-8 photoresist on the insulator layer, and a silicon dioxide upper cladding is deposited to achieve making of a spot size converter. The taper-type portions of the three layers of combined taper-type optical waveguides with materials of SU-8 photoresist are employed to reduce the sizes of spot sizes entering the single-mode fibers in a horizontal direction and a vertical direction, perform cascade with a reverse taper-type silicon waveguide and finally allow a light field to couple into the silicon nanowire optical waveguides. The directend face connection between the silicon nanowire optical waveguides and the common single-mode fibers can be achieved, the matching with the single-mode fiber spot size is improved, the optical coupling efficiency is improved, and it is convenient to perform large-scale optical path integration.

The invention relates to an integrally molded fiber microsensor and a manufacturing method and belongs to the technical field of microsensors. In the invention, a groove with a certain width is formed on the lateral surface of a certain part with a coating removed of a fiber by using femtosecond laser pulse technology, the depth of the groove is a little smaller than the distance from the lateral surface to a fiber core so as to guarantee the integrity of the fiber core, and the bottom surface of the groove is an ablation interface lamina with refractivity increasing uniformly; and a scavenging method is adopted in the whole process to remove ablation chips to guarantee the processing effect. The microsensor in the invention has no assembled or movable parts, has the advantages of integral molding, simple structure, high mechanical strength, high coupling effect and the like and overcomes the shortcomings of instability and the like caused by manufacturing and assembling the plane waveguide fiber microsensor separately. The sensor can detect the existence and concentration of specific molecules in the environment and can also be used for detecting temperature or pressure change.

The invention relates to a laser component, which comprises a substrate and a laser chip, wherein the laser chip is provided with an active region for generating and outputting laser light, and an electrode for supplying the laser chip with electricity; an etching groove for at least partially accommodating the laser chip is formed in one end of the substrate and a light-exiting surface is arranged at the other end of the substrate; the substrate is also provided with an optical waveguide which extends between the etching groove and the light-exiting surface; the laser chip is arranged in the etching groove of the substrate; and the active region of the laser chip is aligned at the optical waveguide on the substrate. The laser component only comprises two parts, namely the substrate for integrating the optical waveguide and the electrode and the laser chip, and is free of other discrete component. The laser structure is simple in design and low in cost; a flip chip bonding alignment technology can be adopted to achieve coupling of a laser light path and coupling of a laser and a grating coupler of a silicon photonic integrated chip; and a passive alignment technology is adopted, so that the coupling efficiency is high and the laser component is suitable for high-efficiency mass production.