Inductance coupling coil and plasma processing device adopting same

Abstract

The invention discloses an inductance coupling coil, which comprises at least two groups of mutually nested coil windings with different diameters, wherein the upper surfaces of at least two groups of the coil windings in the coil windings are at planes with different heights for the convenience of obtaining plasmas which are distributed evenly. Besides, the invention also discloses a plasma processing device comprising a reaction chamber; a dielectric window is arranged on the upper part of the reaction chamber, and the inductance coupling coil is arranged above the dielectric window; and the inductance coupling coil is connected with a radio frequency power supply through a radio frequency matcher so as to obtain the plasmas distributed evenly in the reaction chamber. The inductance coupling coil and the plasma processing device can obtain the plasmas which are distributed evenly, and can obtain an excellent and even processing/handling result.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to an inductively coupled coil. In addition, the present invention also relates to a plasma processing device using the inductively coupled coil. Background technique [0002] With the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires companies that produce integrated circuits to continuously improve the processing / processing capabilities of semiconductor devices. At present, in the field of processing / processing of semiconductor devices, plasma etching technology and plasma deposition technology are often required, and these technologies are usually implemented by means of plasma processing devices such as plasma etching machines. [0003] Therefore, in the field of processing / handling of semiconductor devices, the working performance of a plasma processing device suitable for ...

AI Technical Summary

Problems solved by technology

However, increasing the coil length will cause an increase in the voltage across the coil, and an increase in the voltage across the coil will cause some of the RF power to couple into the plasma through capacitive coupling, that is, the capacitive coupling of the RF power from the coil to the plasma will increase as the voltage across the coil increases

However, capacitive coupling not only reduces the coupling efficiency of RF power, but also increases the kinetic energy of ions, making it difficult to precisely control the kinetic energy of ions, which in turn makes it difficult to precisely control process parameters such as sputtering rate and etching rate.

In addition, increasing the coil length will cause the coil inductance to also increase

However, if the inductance is too high, it will be difficult to achieve the conjugate matching of the coil, so that it is difficult to obtain the large-area, high-density and uniformly distributed plasma required for semiconductor processing, which will affect the uniformity of the processing / processing results of wafers and other workpieces

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