Silicon nanowire grating resonant enhanced photoelectric detector and manufacturing method thereof

Abstract

The invention discloses a silicon nanowire grating resonant enhanced photoelectric detector, which comprises a silicon substrate, a silicon oxide layer, an I-shaped mesa structure, a protective layer, a metal gate electrode and two photocurrent output metal electrodes, wherein the silicon oxide layer is manufactured on the silicon substrate; the I-shaped mesa structure is manufactured on the silicon oxide layer, two ends of the I-shaped mesa structure are provided with a P-type electrode and an N-type electrode, and a silicon nanowire grating resonant cavity structure is connected between the P-type electrode and the N-type electrode; the protective layer is manufactured on the surface and side faces of the I-shaped mesa structure, and electrode windows are formed on the P-type electrode and the N-type electrode at two ends of the I-shaped mesa structure; the metal gate electrode is manufactured on the protective layer of the silicon nanowire grating resonant cavity structure and is close to one side of the N-type electrode; and the two photocurrent output metal electrodes are manufactured in the electrode windows of the protective layer on the P-type electrode and the N-type electrode of the I-shaped mesa structure.

Description

technical field [0001] The invention relates to the field of nanostructure photodetectors, in particular to a silicon nanowire grating resonance enhanced photodetector and a manufacturing method thereof. Background technique [0002] Silicon is not only an electronic material, but also a photonic material. Very mature microelectronics processing technology has provided solid technical support for silicon photonics, greatly accelerating the formation and development of silicon photonics. In the past few decades, silicon processing capabilities have already entered the submicron range smaller than the wavelength of light, and are developing towards the nanoscale range. Silicon nanophotonics is and has become the most exciting new frontier today. Silicon nanophotonics, which deals with the interaction of light and matter in the nanometer range shorter than the wavelength, creates exciting opportunities and enables the development of new technologies. [0003] Due to the nano...

AI Technical Summary

Problems solved by technology

In 2008, Islam et al. from the University of California reported a method for preparing a photodetector by using the lateral induced growth method to connect a large number of silicon, InP or Zn0 nanowires in parallel, and obtained a bandwidth of 30 GHz, which is novel, but the nanostructure of the device There are still many challenges in positioning and reliability control (see M.S.Islam et al., 2nd IEEE International Nanoelectronics Conference, 1009-1014, 2008)

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