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34results about How to "Increase absorption length" patented technology

Silicon nanowire grating resonant enhanced photoelectric detector and manufacturing method thereof

The invention discloses a silicon nanowire grating resonant enhanced photoelectric detector, which comprises a silicon substrate, a silicon oxide layer, an I-shaped mesa structure, a protective layer, a metal gate electrode and two photocurrent output metal electrodes, wherein the silicon oxide layer is manufactured on the silicon substrate; the I-shaped mesa structure is manufactured on the silicon oxide layer, two ends of the I-shaped mesa structure are provided with a P-type electrode and an N-type electrode, and a silicon nanowire grating resonant cavity structure is connected between the P-type electrode and the N-type electrode; the protective layer is manufactured on the surface and side faces of the I-shaped mesa structure, and electrode windows are formed on the P-type electrode and the N-type electrode at two ends of the I-shaped mesa structure; the metal gate electrode is manufactured on the protective layer of the silicon nanowire grating resonant cavity structure and is close to one side of the N-type electrode; and the two photocurrent output metal electrodes are manufactured in the electrode windows of the protective layer on the P-type electrode and the N-type electrode of the I-shaped mesa structure.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Solar cell with phase grating nanostructure

The invention discloses a solar cell with a phase grating nanostructure. A transmission type phase grating is manufactured on the surface of the solar cell, wherein the phase grating is composed of a series of etching grooves, the depth of the etching grooves is calculated through the formula h=lambda/[2(n-1)], pi represents the phase difference generated when incident light is spread to the lower surface from the upper surface of the grating, lambda represents the central wavelength of the incident light, and n represents the refractive index of materials of the phase grating on the surface of the solar cell. The width and interval of the etching grooves are designed according to the Huygens-Fresnel principle and calculated through the Fresnel wave band method. By means of the integration of the phase grating and the solar cell, a high-performance, small-size and high-efficiency photovoltaic system is obtained. The reflectivity of the surface of the solar cell can be effectively decreased. The absorption length of photons in PN junction areas of the solar cell is effectively increased. The light field density of the incident light in the PN junction areas of the solar cell is effectively increased; the effective photon absorption of the PN junction areas of the solar cell is effectively increased.
Owner:ZHEJIANG UNIV

Solar battery with Fresnel lens nano structure

The invention discloses a solar battery with a Fresnel lens nano structure. A Fresnel lens is manufactured on the surface of the solar battery; the Fresnel lens consists of a series of concentric annulus etching grooves; the depth of each etching groove is calculated according to the equation as shown in the specification, so that the phase difference of incident light transmitted to the lower surface from the upper surface of the Fresnel lens is phi, in the equation, lambda is the central wave length of the incident light, and n is the refractive index of the material of the Fresnel lens on the surface of the solar battery; the width and the interval of the etching grooves are designed according to the Huygens-Fresnel principle, and are calculated by using a Fresnel wave band method. As the Fresnel lens is integrated with the solar battery, a high-performance, small-size and high-efficiency photovoltaic system is achieved, the reflectivity of the surface of the solar battery is effectively reduced, the absorbing length of photon on a PN junction area of the solar battery is effectively prolonged, the light field strength of the incident light in the PN junction area of the solar battery is effectively improved, and the effective absorption of the photon in the PN junction area of the solar battery is improved.
Owner:ZHEJIANG UNIV

Aircraft fire alarm detection device and method based on CO2 gas concentration monitoring

The invention provides an aircraft fire alarm detection device and method based on CO2 gas concentration monitoring. A dual-wavelength infrared monitoring principle and a diffusion type structure are adopted, based on the continuous monitoring of the concentration of CO2 gas of an aircraft in flight in a low-temperature low-pressure environment, the fire alarm detection of an aircraft is carried out; the detection device and method have the advantages of capability of being adaptive to a low-temperature low-pressure atmospheric environment, heating, preserving heat, monitoring continuously online in a constant-temperature state, rapid response, high reliability, excellent waterproof and dustproof performances, no need of using an air pump, and the like, and can be widely applied to aircraft fire alarm detection systems. A dual-channel infrared detector is adopted for eliminating interferences caused by factors of light source instability and the like; a light reflection lens is adopted for lengthening the absorption length of infrared light; a heating element and a heat preservation material are adopted for reinforcing the environment adaptability; a conical light concentrator is adopted for increasing the received light intensity and compensating and correcting the temperature and air pressure automatically, so that the aircraft fire alarm detection reliability is improved effectively. The device and the method guarantee the rapidness and accuracy of aircraft fire disaster alarming.
Owner:UNIV OF SCI & TECH OF CHINA

Near-infrared response photodetector of microlens trap structure and preparation method thereof

The invention belongs to the technical field of photoelectric detectors and relates to a near-infrared response photoelectric detector with a microlens trap structure and a preparation method thereof.A photosensitive region passivation layer is arranged in the central region of the upper surface of the absorption layer, and a front mirror, a microlens cushion layer and a microlens array are arranged on the upper surface of the photosensitive passivation layer from bottom to top in sequence. The thickness of the microlens cushion layer is the focal length of the microlens, and the front mirroris provided with a plurality of small light through holes. The invention has the advantages that: from the principle of near infrared response enhancement of microlens trap structure, it can be seenthat the response enhancement is realized by increasing the absorption length of light in the absorption layer through the reflection of the mirror, which does not depend on the increase of the thickness of the absorption layer, so the breakdown voltage temperature coefficient and the response time of the detector will not be increased. Moreover, the temperature coefficient of breakdown voltage and the response speed of the device can be reduced by further reducing the thickness of the absorption layer, so that the comprehensive performance of the near-infrared silicon APD photodetector can begreatly improved.
Owner:THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP

Erbium-doped wedge-shaped waveguide amplifier capable of achieving high efficiency, large energy and small size

The invention discloses an erbium-doped wedge-shaped waveguide amplifier capable of realizing high efficiency, large energy and small volume. A wedge-shaped double-cladding erbium glass waveguide structure is used, pump light is fully absorbed after passing through a gain medium for multiple times, and the absorption length and the absorption uniformity of the gain medium are increased, so that the heat effect is improved, and the pump absorption efficiency is effectively improved. A gain medium wraps the four sides of a material which absorbs 1.5 microns and does not absorb pump light, so that a self-excited oscillation loop is cut off, the influence of ASE is improved, the energy storage efficiency is improved, and the output laser energy is improved. The novel waveguide structure is small in size and compact in structure. The inner cladding and the outer cladding play a role of heat sink for the erbium glass, so that the gain medium can better dissipate heat, the temperature gradient of the center and the side surface of the gain medium is effectively improved, the heat effect is reduced, and high-energy output is realized. The amplifier gain medium is prepared by adopting a bonding technology, so that the whole structure of the amplifier is simpler and more compact, and integration and structural miniaturization are easy to realize.
Owner:BEIJING UNIV OF TECH

Back-illuminated high-speed photodiode receiving chip and manufacturing method thereof

The invention provides a back lighting type photodiode receiving chip and a manufacturing method thereof. The chip comprises an epitaxial layer, the epitaxial layer comprises a P-shaped table face, an N-shaped table face and an indium phosphide substrate; the P-shaped table face comprises an InGaAs absorbing layer, an InGaAsP gradient layer, a reflective mirror layer, an indium phosphide top layer and an InGaAs contact layer; the N-shaped table face comprises an indium phosphide buffer layer; the indium phosphide buffer layer, the InGaAs absorbing layer, the InGaAsP gradient layer, the reflective mirror layer, the indium phosphide top layer and the InGaAs contact layer are grown on the indium phosphide substrate in sequence; an integrated micro lens is arranged at one side of the indium phosphide substrate, and the integrated micro lens and the indium phosphide buffer layer are at the different sides of the indium phosphide substrate. According to the back lighting type photodiode receiving chip and a manufacturing method, on the condition of guaranteeing that chip diffused source area keeps constant, the light absorption area of the chip is expanded, the problem of low coupling efficiency caused by small chip diffused source area is solved, and through the addition of the reflective mirror layer, the quantum efficiency of the chip can be improved.
Owner:SHENZHEN PHOGRAIN INT TECH DEV

A method of using magnetic fluid to prepare wave-absorbing materials

The invention discloses a method for preparing a wave absorbing material from magnetic fluid, and belongs to the field of a wave absorbing material. The wave absorbing material is composed of a composite material coating and a semiconductor coating; the magnetic fluid which is highly stable is prepared by preparing Fe3O4 magnetic nanoparticles by adopting a chemical coprecipitation method, and ultrasonically dispersing a proper amount of surfactant in base carrier liquid; the composite material coating is prepared by uniformly mixing epoxy resin, nickel carbonyl powder and the magnetic fluid so as to obtain a mixture I, and coating n aluminum alloy sheet with the mixture I under the action of an external magnetic field; the semiconductor coating is prepared by uniformly mixing epoxy resin and silicon carbide powder so as to obtain a mixture II, and coating the composite material coating with the mixture II. According to the method disclosed by the invention, the magnetic fluid is cured on the surface of substrate under the action of the external stable magnetic field after a magnetic cone is formed, so as to greatly increase absorption length and widen the absorption band. Meanwhile, the wave absorbing material prepared by adopting the method disclosed by the invention has the advantages of light weight, low thickness and the like, and is convenient in industrial production on a large scale.
Owner:UNIV OF SCI & TECH BEIJING

A co-based 2 Aircraft fire detection device and method for gas concentration monitoring

The invention provides an aircraft fire alarm detection device and method based on CO2 gas concentration monitoring. A dual-wavelength infrared monitoring principle and a diffusion type structure are adopted, based on the continuous monitoring of the concentration of CO2 gas of an aircraft in flight in a low-temperature low-pressure environment, the fire alarm detection of an aircraft is carried out; the detection device and method have the advantages of capability of being adaptive to a low-temperature low-pressure atmospheric environment, heating, preserving heat, monitoring continuously online in a constant-temperature state, rapid response, high reliability, excellent waterproof and dustproof performances, no need of using an air pump, and the like, and can be widely applied to aircraft fire alarm detection systems. A dual-channel infrared detector is adopted for eliminating interferences caused by factors of light source instability and the like; a light reflection lens is adopted for lengthening the absorption length of infrared light; a heating element and a heat preservation material are adopted for reinforcing the environment adaptability; a conical light concentrator is adopted for increasing the received light intensity and compensating and correcting the temperature and air pressure automatically, so that the aircraft fire alarm detection reliability is improved effectively. The device and the method guarantee the rapidness and accuracy of aircraft fire disaster alarming.
Owner:UNIV OF SCI & TECH OF CHINA

Silicon nanowire grating resonant enhanced photoelectric detector and manufacturing method thereof

The invention discloses a silicon nanowire grating resonant enhanced photoelectric detector, which comprises a silicon substrate, a silicon oxide layer, an I-shaped mesa structure, a protective layer, a metal gate electrode and two photocurrent output metal electrodes, wherein the silicon oxide layer is manufactured on the silicon substrate; the I-shaped mesa structure is manufactured on the silicon oxide layer, two ends of the I-shaped mesa structure are provided with a P-type electrode and an N-type electrode, and a silicon nanowire grating resonant cavity structure is connected between theP-type electrode and the N-type electrode; the protective layer is manufactured on the surface and side faces of the I-shaped mesa structure, and electrode windows are formed on the P-type electrode and the N-type electrode at two ends of the I-shaped mesa structure; the metal gate electrode is manufactured on the protective layer of the silicon nanowire grating resonant cavity structure and is close to one side of the N-type electrode; and the two photocurrent output metal electrodes are manufactured in the electrode windows of the protective layer on the P-type electrode and the N-type electrode of the I-shaped mesa structure.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Solar cells with phase grating nanostructures

The invention discloses a solar cell with a phase grating nanostructure. A transmission type phase grating is manufactured on the surface of the solar cell, wherein the phase grating is composed of a series of etching grooves, the depth of the etching grooves is calculated through the formula h=lambda / [2(n-1)], pi represents the phase difference generated when incident light is spread to the lower surface from the upper surface of the grating, lambda represents the central wavelength of the incident light, and n represents the refractive index of materials of the phase grating on the surface of the solar cell. The width and interval of the etching grooves are designed according to the Huygens-Fresnel principle and calculated through the Fresnel wave band method. By means of the integration of the phase grating and the solar cell, a high-performance, small-size and high-efficiency photovoltaic system is obtained. The reflectivity of the surface of the solar cell can be effectively decreased. The absorption length of photons in PN junction areas of the solar cell is effectively increased. The light field density of the incident light in the PN junction areas of the solar cell is effectively increased; the effective photon absorption of the PN junction areas of the solar cell is effectively increased.
Owner:ZHEJIANG UNIV
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