385results about How to "Improve light absorption efficiency" patented technology

Active pixel sensors are defined on double silicon on insulator (SOI) substrates such that a first silicon layer is selected to define radiation detection regions, and a second silicon layer is selected to define readout circuitry. The first and second silicon layers are separated by an insulator layer, typically an oxide layer, and the layers can be independently doped. Doping can be provided in the silicon layers of the SOI substrate during assembly of the SOI substrate, or later during device processing. A semiconductor substrate that supports the first and second layers can be removed for, for example, back side radiation detection, using a second insulator layer (typically an oxide layer) as an etch stop.

The invention relates to a PVA hydrogel-based photo-thermal evaporation material and preparation and application thereof. The preparation method comprises the following steps: step 1, respectively preparing an aqueous polyvinyl alcohol (PVA) solution, an aqueous nanometer photo-thermal material dispersion solution, an aqueous glutaraldehyde solution and a low-concentration hydrochloric acid solution; 2, fully mixing and stirring the aqueous PVA solution, the aqueous nanometer photo-thermal material dispersion solution, the aqueous glutaraldehyde solution and the low-concentration hydrochloricacid solution in the step 1 according to a certain sequence under a certain temperature condition; and 3, transferring the mixed and stirred product into a forming mold when the mixed and stirred product is not cured, and carrying out standing until a cross-linking reaction is complete, thereby obtaining the hydrogel material. The preparation method disclosed by the invention has the beneficial effects that preparation process is environment-friendly, pollution-free, simple and feasible; preparation cost is low; the obtained hydrogel can be used as an ideal photo-thermal evaporation and solarseawater desalination material; and the prepared hydrogel has high light absorption efficiency, photo-thermal conversion efficiency and evaporation efficiency, and can be applied to the field of solarseawater desalination.

The invention belongs to the technical field of electronic technologies and photoelectronic imaging technologies, in particular relates to a single-photon avalanche diode and a three-dimensional CMOS (Complementary Metal Oxide Semiconductor) image sensor based on the diode. The single-photon avalanche diode of the invention improves the traditional rectangular photosensitive PN junction into a regular octagon and can conveniently and simply weaken edge breakdown and improve gain uniformity. A two-dimensional pixel array of the three-dimensional CMOS image sensor based on the diode comprises unit pixels of the regular octagon-shaped single-photon avalanche diode and is arrayed in a honeycomb-shape, thereby being convenient for interpolation and improving resolution in horizontal and vertical direction.

The invention discloses a method for preparing a nano-branched titanium dioxide photoanode of a dye sensitized solar cell and relates to a photoanode of a solar cell. The method comprises the following steps of: cleaning conductive glass; depositing a ZnO nanorod array template on the surface of the conductive glass and dipping in a mixed solution of (NH4)2TiF6 and boric acid to obtain titanium dioxide nanorods; dipping the calcined titanium dioxide nanorods in a TiCl4 solution, putting into a reaction kettle, leaning the conductive glass against the inner wall of the reaction kettle, adding a mixed solution of HCl and tetrabutyl titanate and performing hydrothermal reaction to obtain the nano-branched titanium dioxide photoanode of the dye sensitized solar cell; mixing tetrabutyl titanate and HF, performing hydrothermal reaction, taking out white powder, washing, performing centrifugal separation, drying, putting the product into an absolute ethanol solution to obtain the suspension of titanium dioxide nano-slices; and coating a film layer of titanium dioxide nano-slice granules on the surface of the obtained product to obtain the final product.

The invention discloses a preparation method of a metal nanostructure. The preparation method comprises the steps of (1) manufacturing a mask plate; (2) providing a clean and dry base plate, uniformly coating a positive ultraviolet photoresist on the base plate, and pre-baking to ensure that the positive ultraviolet photoresist is solidified to form a photoresist base plate; (3) overlapping the mask plate on the photoresist base plate, and performing exposure, development, residual adhesive removal and hardening under ultraviolet light to obtain a forming mold with shape grooves of a nanostructure graph; (4) depositing a metal in the forming mold by adopting a chemical synthetic method; (5) soaking the forming mold deposited with the metal in an acetone solution, and performing ultrasonic adhesive removal to obtain the metal nanostructure of the nanostructure graph. The preparation method disclosed by the invention is simple in process and high in efficiency; the shape, size and position of the prepared metal nanostructure can be accurately controlled, and the light extraction efficiency and light absorption efficiency of a metal nanostructure material are effectively improved.

The invention relates to a surface-texturing n-type ZnO-based transparent conductive film and a preparation method thereof. The invention forms a large amount of microporous structures with regular arrangement, uniform structure, good communication and a certain depth on the film surface of the conductive film. The surface-texturing film has excellent light capture performance and extremely high conductivity simultaneously. The surface-texturing n-type ZnO-based transparent conductive film prepared by direct current magnetic control continuous sputtering has simple process and easily monitored quality, is suitable for large-scale production, can keep excellent column-shaped crystal structure of the body film, has complete communication between holes and keeps high conductivity of the ZnO-based film; the micropore on the texture surface has excellent uniformity and repeatability compared to the two traditional methods; furthermore, the depth and the diameter of the hole are controllable within a certain range; the average transmissivity of the film layer at the visible light area reaches more than 90%, the mobility is up to 35.4cm[2] / V.S, the resistivity is 1.003*10[-4]Omega.cm and the sheet resistance reaches 0.9 Omega.

The invention relates to an SnO2 porous structure perovskite photovoltaic cell and a preparation method thereof, which belong to the field of photoelectric materials and devices. An electron-transporting layer of the perovskite photovoltaic cell is a tin oxide compact layer covering above a transparent conducting substrate and a tin oxide porous layer covering above a tin oxide compact layer film. The porous structure SnO2 perovskite porous photovoltaic cell prepared based on a low temperature obtains 12.58 percent of high photoelectric conversion efficiency, which is higher than a plane structure perovskite film photovoltaic cell adopting an SnO2 compact layer as an electron-transporting layer. The oxide SnO2 is acid and alkali resistant, large in band gap width, and low in ultraviolet attenuation as a cell window layer, and has significance on improving the stability of performances of devices; in addition, the preparation method is simple in process, low in cost, and beneficial to scale production, and has wide business application prospect.

The invention relates to high-intensity photocatalytic cement-based composite slurry. The high-intensity photocatalyst cement-based composite slurry comprises a photocatalyst composite body, cement, aggregate, an active mixture, a polymer additive, fibers, a water reducing agent and water, wherein the photocatalyst composite body comprises modified rare-earth elements and N co-doped TiO2, activated carbon and conductive fillers. According to the preparation method, the slurry is prepared through the raw materials and then treated by pouring and maintaining and molding with high humidity under a high temperature and other processes to form a face brick and an exterior wall cladding. The product detection result shows that the ultimate bending strength of the product reaches 25 to 30MPa, the ultimate compressive strength reaches 150 to 200MPa, the shock strength reaches 15 to 20kJ / m<2>, an absorption band of a photocatalyst is subjected to redshift to reach a 600nm visible region, the degradation rate for a 1mg / L rhodamine aqueous solution after 6 hours reaches 85 to 90%, and therefore, the product is high in mechanical strength and high in capacity of degrading pollutants with the visible light in a photocatalytic manner.

The invention discloses a GeSn-GeSi material based heterogeneous phototransistor and a fabrication method thereof. A collector and an emitter of the transistor both adopt a GeSi material, a light absorption region and a base region both adopt a GeSn material, an emitter region, the base region, the light absorption region and a collector region are sequentially and vertically arranged, and a passivation layer encircles the peripheries of the emitter region, the base region, the light absorption region and the collector region. According to the fabrication method of the transistor, the GeSn material is grown by a low-temperature solid-source molecular beam epitaxial process, and the fabrication method is a standard complementary metal oxide semiconductor (CMOS) fabrication method. The GeSn material with a high light absorption coefficient forms heterojunctions in the light absorption region, the GeSi emitter region and the collector region, the light sensitivity and light current during detection of an infrared light signal by the transistor are improved, and the GeSn-GeSi material based heterogeneous phototransistor has high light absorption rate.

The invention discloses a bismuth tungstate composite photocatalyst modified by a nitrogen-doped carbon quantum dot and a preparation method and application thereof. The composite photocatalyst is characterized in that bismuth tungstate is taken as a carrier, and is modified with the nitrogen-doped carbon quantum dot. The preparation method comprises the following steps: mixing bismuth nitrate, sodium tungstate and water, and stirring the mixture to obtain a bismuth tungstate precursor solution; mixing the bismuth tungstate precursor solution with a nitrogen-doped carbon quantum dot solution, and stirring the mixture to obtain a mixed solution; performing a hydrothermal reaction to obtain the bismuth tungstate composite photocatalyst. The composite photocatalyst has the advantages of environmental friendliness, high photo-induced electron-hole separating efficiency, high light absorbing efficiency, high photocatalysis activity, high photocatalysis stability and high corrosion resistance; the preparation method has the advantages of simple preparation process, low raw material cost, and easiness in controlling operation conditions. The composite photocatalyst is used for catalyzing degradation of antibiotic wastewater, and has the advantages of simple application method, high degrading efficiency and high repeatability, and has a very good practical application prospect.

The invention relates to manufacturing of metal transparent film electrodes, in particular to a manufacturing method of a copper nano wire network wrapped by a graphene carbon film. According to the manufacturing method of the copper nano wire network wrapped by the graphene carbon film, oxidation resistance and the optical-electrical characteristic of copper nano wire electrodes can be effectively improved. The manufacturing method includes the steps that the copper nano wire film electrodes are manufactured; graphene is grown on copper foil at low temperature; the vacuum melting point of copper nano wires is regulated and controlled; the copper nano wire network is wrapped by the graphene carbon film. The sample is sealed through a copper foil capsule, by using the method of strictly controlling the curing time and the reaction time of the sample through a magnetic force rod, the profile of the copper nano wires at high temperature can be kept stable, rapid cooling and annealing treatment after the graphene carbon film is wrapped can be finished, and therefore the surfaces of the whole side walls of the copper nano wires can be evenly wrapped by the graphene carbon film within the effective time to form a coaxial wrapped structure.

The invention discloses a silver phosphate / nitrogen-doped carbon quantum dot / bismuth vanadate Z type photocatalyst, a preparation method and application thereof. The Z type photocatalyst adopts bismuth vanadate as the carrier, and the bismuth vanadate is modified with nitrogen-doped carbon quantum dots and silver phosphate. The preparation method includes: preparation of a nitrogen-doped carbon quantum dot modified bismuth vanadium material; and mixing of the nitrogen-doped carbon quantum dot modified bismuth vanadium material with silver nitrate and disodium hydrogen phosphate dodecahydrate in water so as to obtain the Z type photocatalyst. The Z type photocatalyst provided by the invention has the advantages of high light absorption efficiency, high photoinduced electron-cavity separation efficiency, high photocatalytic activity, strong redox ability and the like, can efficiently degrade antibiotic wastewater, also has the advantages of simple application method, high degradation efficiency and good reutilization, and has good practical application prospect. The preparation method provided by the invention has the advantages of simple preparation process, easily controllable operating conditions, simple and easily available raw materials, low preparation cost and the like, and is suitable for continuous and large-scale mass production.

The invention discloses a single photon avalanche diode, a manufacturing method thereof, a detector array, and an image sensor. The back-illuminated single-photon avalanche diode is provided with a light trapping structure and a side wall reflecting wall. Incident light is scattered to all angles after being reflected, scattered and refracted by the light trapping structure, and the effective optical path of the light in the back-illuminated single-photon avalanche diode can be prolonged under the reflection action of the side wall reflection wall, so that the absorption efficiency of the light in the back-illuminated single-photon avalanche diode is improved. The invention relates to the manufacturing method of the back-illuminated single-photon avalanche diode, which realizes the manufacturing of the back-illuminated single-photon avalanche diode. Due to the fact that the photoelectric detector array and the image sensor comprise the back-illuminated single-photon avalanche diode, the light absorption efficiency of the photoelectric detector array and the image sensor is effectively improved.

The invention relates to hexagonal boron nitride, particularly a method for preparing wafer-grade large-size hexagonal boron nitride on a substrate. The method comprises the following steps: growing a hexagonal boron nitride film on Cu foil in a controllable way; after Borazane-carrying gas leaves the quartz tube, bending the Cu foil substrate into a semicircular column, putting in a quartz boat, pushing into a heating region, vacuumizing, heating, introducing H2 when the temperature reaches the set value to perform surface oxide removal treatment, further raising the growth temperature of the third region, and heating a precursor of the first region; when the set values of the first region and third region are simultaneously reached, introducing H2 and Borazane gas generated by Ar delivery from the quartz tube into a reaction chamber to react until the Cu foil is completely covered; after the reaction finishes, taking out the Cu foil, thereby obtaining the large-area hexagonal boron nitride film on the Cu foil; and applying a PMMA (polymethyl methacrylate) layer by spin coating, dissolving away the Cu substrate, transferring the PMMA / hexagonal boron nitride film onto the substrate, and removing the PMMA layer on the sample surface.

The invention discloses a preparation method of a nitrogen (N)-doped titanium dioxide (TiO2) porous film on the surface of a stainless steel matrix, belonging to the field of the preparation technology of photocatalytic materials. The method is characterized by a technical scheme for preparing a high film-based bonding strength anatase type N-doped TiO2 porous film on a stainless steel matrix, and comprises the following steps of: firstly preparing a Ti-N diffusion coating layer composed of a Ti-N diffusion layer in the matrix and a surface Ti-N compound film on the surface of a stainless steel workpiece by use of a double glow plasma surface alloying technology; then performing anode oxidation on the Ti-N film on the workpiece surface to generate an N-doped TiO2 porous film; and finally performing thermal treatment in the air to prepare an anatase type N-doped TiO2 porous film. By adopting the preparation method disclosed by the invention, the prepared N-doped TiO2 porous film has the advantages of large specific surface area and good film-based bonding strength, and also has visible light catalysis performance; and the stainless steel after the N-doped TiO2 surface modification can be applied to the fields of photocatalysis self-cleaning, photocatalysis sterilization and the like.

The invention discloses a hollow TiO2 microsphere synthesizing method, and belongs to the field of solar energy utilizing photovoltaic technology and photocatalysts. In the hollow TiO2 microsphere synthesizing method, through hydrothermal treatment, tetrabutyl titanate is directly taken as an oil phase and forms an emulsion dispersion system with water to obtain a TiO2 hollow spherical particle; a hollow characteristic is obtained through simple change in the mixing sequence of raw materials; the substantial part of the TiO2 hollow spherical particle has a three-dimensional interpenetrating network structure formed by a nano TiO2 crystal grain and a nano-sized space; the average diameter of the spherical particle is 0.5-1.5 microns and can be adjusted by changing the adding amount of a surfactant; the specific surface area of the spherical particle is 32-97 m2 / g; the apparent density of the spherical particle is 1.91 g / cm3. When the hollow spherical particle is used as an electrode material of a dye-sensitized TiO2 solar cell, the optical path can be elongated and the utilization efficiency of light energy can be improved; and when the hollow spherical particle is used as a photocatalyst, the photocatalytic activity is high and the hollow spherical particle is easily separated from a liquid medium.

Belonging to the technical field of nano-material preparation, the invention in particular relates to a ZnS / rGO / CuS nano-photocatalyst and a preparation method thereof. ZnS / CuS is a widely applied photocatalyst, the morphology of ZnS / CuS can be further regulated to increase the exposure number of active sites, thereby improving the photocatalytic activity of the photocatalyst. The zeolite imidazole framework material ZIF-8 has high specific surface area and abundant pore structures, and provides favorable conditions for construction of the photocatalyst. The preparation method of the materialincludes: firstly preparing graphene oxide (GO) loaded ZIF-8, and taking the product as the template to prepare the GO loaded ZnS porous nano-material ZnS / rGO, and finally introducing nano-CuS into the porous ZnS / rGO system to prepare the target product, i.e. ZnS / rGO / CuS nano-photocatalyst. The ZnS / rGO / CuS nano-photocatalyst provided by the invention has the advantages that: the ZnS prepared withZIF as the template has a super-large specific surface area, and provides more loading sites for CuS, thereby increasing the exposure number of active sites, and the introduction of graphene oxide cansignificantly improve the carrier conduction capacity, thereby significantly improving the photocatalytic activity of the photocatalyst.

To provide a tandem dye-sensitized solar cell having a novel structure capable of improving the light absorption efficiency and being manufactured less expensively. A dye-sensitized solar cell 10 is configured by including, in order from the light incident side, an anode substrate 12, a first dye-carrying porous oxide semiconductor layer 14, a first electrolyte layer 16a, an electrolyte redox catalyst layer 18, a second dye-carrying porous oxide semiconductor layer 20, a porous support layer 19, a second electrolyte layer 16b, and a cathode substrate 22. The electrons extracted from a conductor layer 12b by a conductor are introduced into the cathode substrate 22, so that a battery circuit, for example, for a lighting power source is configured.

The invention relates to a preparation method of a nanoscale laser array, in particular to a preparation method of a nano laser array using perovskite nanowires in directional alignment as a gain medium and a resonant cavity. The one-dimensional nanoscale perovskite nanowires in directional alignment are used as the gain medium and the resonant cavity, the perovskite nanowires in directional alignment in a plane are successfully prepared, the nanoscale laser array is realized, and the problem of a nanoscale light source in a high-density photon integration system is effectively solved. The chemical formula of the perovskite nanowires in directional alignment is CsPbX3, the diameter is 200 to 800 nm, and the length is 10 to 80 microns. In a synthetic method, CsX powder and PbX2 powder are taken as raw materials, annealed M-Plane sapphire is taken as a substrate, and the nanoscale laser array is prepared by adopting a chemical vapor deposition method. The preparation method also has extremely important significance for realizing the high-density photon integration system.

The invention belongs to the technical field of polymer material synthesis, discloses a water-soluble carbon quantum dot sustained-release microcapsule and a preparation method and application thereof. The water-soluble carbon quantum dot sustained-release microcapsule is composed of a capsule core containing water-soluble carbon quantum dots and a capsule wall. The method is as follows: (1) underthe condition of mixing, a water phase comprising the carbon quantum dots, a crosslinker, a catalyst, a water soluble emulsifier and water is added to an oil phase comprising an oil soluble emulsifier and an organic solvent dropwise for emulsifying to form initial emulsion; and (2) under low-speed stirring, the initial emulsion is added to an outer water phase comprising wall material PVA, a stabilizer and water to form W / O / W multiple emulsion; and the water-soluble carbon quantum dot sustained-release microcapsule is obtained by continued crosslinking reaction, centrifuging, washing anddrying after the completion of the adding. The microcapsule has high fluorescence intensity, high core coating rate, low carbon quantum dot loss, controllable release and high light absorption efficiency, and is used in plant photosynthesis and other fields.

The invention discloses a graphene-silicon heterojunction photoelectric detection chip and a preparation method thereof. The detection chip includes a silicon substrate, a frame-shaped SiO2 insulatinglayer on the boundary around the silicon substrate, an interface passivation layer on the silicon substrate, a graphene layer on the interface passivation layer, and a metal nanostructure layer on the graphene layer. By introducing the metal nanostructure to the chip structure, on one hand, the light absorption efficiency of the graphene-silicon heterojunction can be significantly improved and the light responsivity and linear light response range of devices can be improved through the localized surface plasmon resonance characteristic of the metal nanostructure. On the other hand, through the ultrafast photoelectric conversion process of the metal nanostructure under light excitation, the spectral response rate and frequency characteristic of the chip can be significantly improved. In addition, by making use of different spectrum resonance characteristics of metal nanoparticles of different materials and sizes, the specific spectrum enhancement characteristic of the detection chip can be significantly improved.

The invention belongs to the technical field of solar cell manufacturing and relates to a method for manufacturing a polymer solar cell mixed with clad nanometer metal. The method for manufacturing the polymer solar cell mixed with the clad nanometer metal includes the following steps. A transparent substrate with anode electrodes are thoroughly cleaned and dried. An electron hole transmitting layer is formed on anode electrodes. An optical activity layer mixed with organic or inorganic clad nanometer metal is formed on the electron hole transmitting layer. An electron buffering layer is formed on the optical activity layer. Finally, a cathode electrode is formed on the electron buffering layer to obtain a polymer solar cell mixed with organic or inorganic clad nanometer metal. The polymer solar cell manufacturing method mixed with the clad nanometer metal is simple in manufacturing technology, high in optical conversion rate, low in cost and friendly to environment.

The invention belongs to the technical field of nano material preparation, and specifically discloses a preparation method of a ZnS / CuS nanosheet composite photocatalyst. The preparation method comprises the following steps: (1) weighing raw materials of copper nitrate trihydrate, zinc nitrate hexahydrate, thiourea and a surfactant according to proportions, then putting the raw materials in an acetonitrile water solution for ultrasonically oscillating, and then stirring under constant temperature, thus forming a uniform copper-zinc mixed solution; (2) putting the copper-zinc mixed solution into a hydrothermal reaction kettle, and reacting under specified temperature and time; (3) completing the reaction, removing supernatant after naturally cooling, respectively washing by three times by using deionized water and absolute ethanol, and drying for 5 hours under 60 DEG C in a drying oven, wherein an obtained product is a composite nanosheet of which Cu to Zn is equal to x to y. In the preparation method of the ZnS / CuS nanosheet composite photocatalyst, disclosed by the invention, when a CuS / ZnS dual-metal sulfide is used as a photocatalyst, photon-generated carriers can be effectively separated, and the photocatalytic activity is effectively increased.

The invention discloses a method for treating antibiotic wastewater by using a cobalt ion-doped metal organic framework material. The method comprises the following steps: mixing the cobalt ion-dopedmetal organic framework material and the antibiotic wastewater, and performing oscillating adsorption to complete treatment to the antibiotic wastewater, wherein the cobalt ion-doped metal organic framework material comprises cobalt ions and UiO-66(Zr), and the cobalt ions are doped in the UiO-66(Zr). By the method for treating the antibiotic wastewater by using the cobalt ion-doped metal organicframework material, a treatment technology is simple, operation is convenient, equipment is simple, the cost is low, the treatment efficiency is high, the removing effect is good, the repeated utilization rate is high, and cleanness and no pollution are achieved; the method is a treatment method which can be widely applied and by which antibiotics can be effectively removed, and has a very high application value and a very high commercial value.

The invention provides a light controllable type quantum dot backlight source. The light controllable type quantum dot backlight source comprises a blue light source module and an optical plate, wherein the blue light source module and the optical plate are sequentially stacked. A quantum dot layer is arranged on the in-light end surface of the optical plate, and a microstructure is arranged on the out-light end surface of the optical plate. According to the light controllable type quantum dot backlight source, the high precision ink spraying printing technology is adopted, thus a quantum dot convex len is formed on the end surface of the optical plate; the light effect and divergence angle of dot light source are improved; the utilization rate of quantum dot materials is increased. According to the light type of the light source on the out-light surface, the size and density of pixels in the small partition are adjusted; the control on the uniformity of a backlight plate is realized. The concentration of red and green quantum dot ink, the relative proportion and resolution rate distribution of red and green quantum dots are adjusted; the accuracy control on the chromaticity, color temperature and wavelength of emitting light are realized. The shape, size and depth of the superfine microstructure optical plate surface structure are adjusted; high precision ink spraying printing design is combined and the overall light effect of the light controllable type quantum dot backlight source is improved.

The invention relates to a photoelectric-effect ion source based on carbon nano-tubes. The ion source comprises an ultraviolet ray emitting device and a power source, wherein the anode of the power source is connected with a counter electrode; the cathode of the power source is connected with a carbon nano-tube electrode, the carbon nano-tube electrode comprises a carbon nano-tube layer and a substrate, the carbon nano-tube layer is opposite to the counter electrode, and a passage which is used for a sample to pass through is reserved between the carbon nano-tube layer and the counter electrode; and the ultraviolet ray emitting device irradiates the carbon nano-tube electrode. According to the ion source, ions are generated through the photoelectric effect on the carbon nano-tubes, the carbon nano-tubes are very low in light reflection coefficient and very high in light absorption efficiency, the electron emission is easier due to the unique one-dimensional structure of the carbon nano-tubes, and the carbon nano-tubes can be used in an atmospheric state, so that the problem in the prior art that the vacuum is required when the field-effect ion emission is carried out by using the carbon nano-tubes is solved, the range of use is expanded, and the use is more convenient.

The invention discloses a heterojunction solar cell and an interfacing processing method and preparing technology thereof. According to the interface processing method of the heterojunction solar cell, in the preparing technology of the heterojunction solar cell, highly doping processing is conducted on the front surface of a crystalline silicon wafer with the ion implantation technology or the diffusion technology so that a heavy doped layer can be formed on the front surface of the crystalline silicon wafer, and then the Fermi level of the surface of the crystalline silicon water of the heterojunction solar cell is changed and an built-in electric field is enhanced. According to the method, the built-in electric field of the substrate interface of crystalline silicon can be enhanced, separation and conveyance of current carriers on the border of a depletion region can be promoted more effectively, film / crystalline silicon abrupt junction formation is facilitated, the width of a depletion layer on the base region of the crystalline silicone is reduced, light absorption efficiency is improved, recombination losses of the current carriers are reduced, and the voltage characteristic of a heterojunction efficient battery is improved.

The present invention provides a zinc-doped prussian blue nanoparticle preparation method, wherein a hexaoyanoferrous acid substance and zinc methacrylate are adopted as raw materials, an organic acid with a specific concentration is matched to prepare the zinc-doped prussian blue nanoparticles having double bond on the surface, and an organic layer having carboxyl, amino, hydroxyl and other functional groups is modified on the nanoparticle surface through a polymerization reaction. Another purpose of the present invention is to provide the zinc-doped prussian blue nanoparticles prepared through the preparation method, and clinical applications of the zinc-doped prussian blue nanoparticles as the contrast agent in magnetic resonance imaging and photoacoustic bifunctional imaging. According to the present invention, the prepared zinc-doped prussian blue nanoparticles have characteristics of good water solubility, good biocompatibility and good light-heat stability, and amino, carboxyl or hydroxyl and the like are modified on the nanoparticle surface so as to provide favorable conditions for the further surface modification and antibody grafting.

The invention is related to new type catalysis counter electrode and preparation method. The counter electrode is prepared through following steps: fixing a layer of nickel base alloy on side face of the substrate, and fixing metal layer in ultrathin on external side face of the said nickel base alloy. Nickel base alloy possesses high light reflectivity and high conductivity. Ultrathin metal layer possesses high activity of electrocatalysis for oxidation-reduction reaction of iodine. Combination of both features is able to raise light absorption efficiency of battery, lowers ohm loss and electrochemical polarization loss so as to raise photoelectric conversion efficiency. The disclosed counter electrode possesses good stability in corrosion operation environment of battery. Thus, the counter electrode is suitable to dye sensitized solar cell specially.

The invention provides an ocean self-adjustment power generation device. The ocean self-adjustment power generation device comprises a base and a supporting rod vertically arranged on the base. A plurality of horizontal coils and a plurality of vertical coils are fixedly connected to the interior of the supporting rod. The upper end of the supporting rod is fixedly connected with a connecting base. A wind driven generator is rotatably arranged on the connecting base. The supporting rod is slidably sleeved with a pipe sleeve. The pipe sleeve is fixedly connected with a magnet. A plurality of bearing rods are fixedly connected to the outer circumferential wall of the pipe sleeve. The free ends of the bearing rods are fixedly connected with floating bodies. A connecting plate is arranged on the lower portions of the bearing rods. A through hole is formed in the middle of the connecting plate. The supporting rod is located in the through hole. The bearing rods are fixedly connected with the upper side face of the connecting plate. A plurality of fixing columns are fixedly connected to the lower side face of the connecting plate. The lower ends of the fixing columns are rotatably connected with turbine power generators. Each bearing rod is further rotatably connected with a plurality of solar panels in the length direction of the bearing rod. A transmission part is arranged between the supporting rod and the solar panels. The ocean self-adjustment power generation device can comprehensively utilize wind power, ocean current and solar energy to generate power, and has the advantage of high ocean energy utilization rate.