51results about How to "Improve light absorption efficiency" patented technology

The invention belongs to the technical field of optical communication, and relates to a flexible silicon-based photoelectric device, a receiving end and a visible light communication system. The flexible silicon-based photoelectric device comprises a back electrode layer, a hole transport layer, a P-type silicon light absorption layer, an electron transport layer and a front electrode layer. The valence band side energy difference between the electron transport layer and the P-type silicon light absorption layer is greater than the conduction band side energy difference; the conduction band side energy difference between the P-type silicon light absorption layer and the hole transport layer is greater than the valence band side energy difference; the forbidden bandwidth of the electron transport layer is greater than 3.0 eV. The front electrode layer comprises a plurality of grid electrodes which are separately arranged on the surface of the electron transport layer. According to the scheme provided by the invention, the heterojunction is formed on the surfaces of the two sides of the P-type silicon light absorption layer, so that the intensity of a built-in electric field is effectively enhanced, and the flowing speed of photo-generated electrons and photo-generated holes in the device is accelerated, thereby improving the response speed of the device; and meanwhile, the collection efficiency of electrons and holes is improved, so that the photoelectric conversion efficiency of a photoelectric device is improved.

The invention belongs to the technical field of photoinitiators, and particularly relates to a ketoxime ester photoinitiator as well as application and a photosensitive combination thereof. Compared with the prior art, the novel photoinitiator has the advantages that by introducing a sulfone phenyl specific structure to a ketoxime ester group and the like, excellent photosensitivity can be shown in the optical wavelength range of 280-400 nanometers, and compared with OXE-01 and OXE-02 commonly used in the market, the novel photoinitiator can show better photoinitiation efficiency under an ultraviolet visible (UV-Vi s) LED light source.

The invention relates to the field of air hydrogen production, and provides an air hydrogen production material, a preparation method and application. The invention discloses a material for producing hydrogen from air, graphene aerogel and an MOF material, the graphene aerogel can absorb solar energy and convert the solar energy into heat energy, and the MOF material can adsorb water vapor in the air and catalyze a reaction for producing hydrogen under the illumination of the sun. The preparation method of the air hydrogen production material comprises the following steps: preparing a precursor solution containing graphene oxide, a polymer binder and an MOF material as required to form a solid compound, and then carrying out vacuum freeze-drying reduction treatment. The material can adapt to different application scenes, realizes distributed hydrogen production, and is suitable for efficient hydrogen production in diversified environments.

The invention discloses a near-infrared light mediated heterogeneous composite photocatalyst as well as a preparation method and application thereof, the heterogeneous composite photocatalyst is an up-conversion luminescent material loaded semiconductor material, and can realize up-conversion luminescent catalysis under the irradiation of 980nm near-infrared light; the up-conversion luminescent material is rare earth ion doped fluoride nanoparticles, fluoride is one or two of yttrium fluoride and sodium yttrium tetrafluoride, the doped rare earth ions comprise rare earth luminescent center ions and light absorption ions, the luminescent center ions comprise one of Er < 3 + >, Tm < 3 + >, Tb < 3 + > and Pr < 3 + >, and the light absorption ions comprise Yb < 3 + >; the semiconductor material is of a heterojunction structure which is tightly formed by Co3O4 quantum dots and g-C3N4 nanosheets. The up-conversion nanoparticles are synthesized by adopting a simple hydrothermal method and are loaded on the g-CN nanosheets modified by the CoO quantum dots, and the obtained composite material can effectively convert near-infrared light into visible green light, so that generation of photocatalytic reaction species is increased, and the up-conversion nanoparticles are recycled and reused for multiple times without inactivation.

The invention discloses a three-in-one new energy charging station integrating photovoltaic power generation, charging and energy storage functions, which comprises a charging station platform fixedly mounted on the ground, a plurality of charging piles for charging new energy vehicles are fixedly connected to the charging station platform, and a cover plate is fixedly connected to the charging station platform through an external bracket. Supporting frames are fixedly connected to the symmetrical positions of the two sides of the cover plate, a lifting plate capable of conducting lifting movement is movably connected to the inner walls of the two supporting frames, and adjusting frames are rotationally connected to the symmetrical positions of the two sides of the lifting plate through pin shafts. The inner wall of each adjusting frame is fixedly connected with a solar cell panel for photovoltaic power generation, and the cover plate is provided with an adjusting mechanism for adjusting the angle of the solar cell panel and a protection mechanism for shielding the solar cell panel. And the illumination absorption efficiency of the solar cell panel is ensured.

The utility model relates to the technical field of air environment gas monitoring, and provides gas environment monitoring equipment which comprises a gas monitor located at the top of a supporting cylinder and a solar panel located on the gas monitor, and the solar panel is electrically connected with the gas monitor; the cleaning roller is arranged on the solar panel in a sliding and rotating mode, abuts against the solar panel and is used for sweeping dust on the solar panel. The cleaning strip is arranged on the solar panel in a sliding mode and located behind the cleaning roller, the cleaning strip is provided with a cleaning end, the cleaning end abuts against the solar panel, and the cleaning strip is used for scraping bird droppings on the solar panel. According to the technical scheme, the problem that the absorption efficiency of solar light is affected due to dust and impurities accumulated on the solar panel in the related technology is solved.

The invention discloses an inorganic composite environment-friendly coating for photocatalytic air purification and a preparation method of the inorganic composite environment-friendly coating. The coating comprises the following raw material components in parts by mass: 30-60 parts of emulsion; 5 to 20 parts of a porous substance-dye molecularly-TiO2 photocatalytic composite material; 10 to 30 parts of an inorganic filler; 1-5 parts of an auxiliary agent; 10 to 40 parts of water; wherein the porous substance-dye molecularly-TiO2 photocatalytic composite material is a composite material formed by loading dye molecules onto the surface of titanium dioxide on the surface or in pore channels of a porous substance. A more sufficient photocatalytic substrate is provided by utilizing a porous substance, and the photocatalytic capability is promoted by utilizing the light absorption capability of dye molecules, so that the air purification effect is enhanced, and the purification efficiency is improved.

A narrow-pulse-width multi-wavelength laser based on LED pumping comprises a reflecting mirror, a first LED pumping module, an optical rotation crystal, a second LED pumping module, an acousto-optic Q-switched crystal and an output mirror which are sequentially connected in series. The LED pumping module comprises a laser rod located in the center, a glass sleeve is arranged on the periphery of the laser rod in the length direction, a supporting frame is arranged on the periphery of the glass sleeve, a plurality of sets of water-cooling copper blocks are evenly arranged on the supporting frame, and an LED stacking array is arranged on the side, close to the glass sleeve, of each set of water-cooling copper blocks. Each LED stacking array comprises an LED light bar and a PCB (Printed Circuit Board) for fixing the LED light bar, and the PCB is connected with the water-cooling copper block; cooling water circulation modules are arranged at the two ends of the laser rod in the length direction respectively, and water through holes are formed in the cooling water circulation modules and the water cooling copper blocks respectively. A laser resonant cavity system of the laser takes an LED as a pumping source, combines an acousto-optic Q-switching technology, and simultaneously realizes compression of laser pulse width and multi-wavelength output.

The invention relates to the technical field of photovoltaic cell preparation, in particular to a cell assembly based on a rectangular silicon wafer and a processing method of the cell assembly. Comprising the following steps: placing a monocrystalline silicon wafer in a potassium hydroxide solution, texturing, washing and drying to obtain a textured silicon wafer; sequentially performing low-pressure diffusion, SE laser, polishing and oxidizing annealing on the textured silicon wafer to obtain a silicon wafer A; sequentially depositing an aluminum oxide layer and a silicon nitride layer on the back surface of the silicon wafer A to obtain a silicon wafer B; depositing a silicon nitride layer on the front surface of the silicon wafer B to obtain a rectangular silicon wafer; performing laser grooving, screen printing and sintering on the rectangular silicon wafer to obtain a single battery piece; the single battery pieces are connected in series through a welding strip to obtain a battery string; (3) sequentially laying glass, POE / EPE, a battery string, EVA and grid glazed backboard glass, sealing the edge by an edge sealing tape machine, and then, carrying out lamination, framing and junction box installation in the next process; and thus, a rectangular silicon wafer battery assembly is obtained.

The invention relates to the technical field of photocatalytic processes, in particular to a catalyst for preparing methanol through photocatalytic reduction of CO2 as well as a preparation method and application of the catalyst. The catalyst comprises a composite carrier and active sites dispersed on the surface or in pores of the composite carrier, the composite carrier is of a heterojunction composite structure formed by a hollow TiO2 sphere and MCN, the hollow TiO2 sphere comprises a shell layer and a spherical cavity structure located in the shell layer, the shell layer is formed by TiO2 nanoparticles, and the MCN has a mesoporous pore structure; a II-type or Z-type heterojunction interface is formed between the hollow TiO2 spheres and the MCN through physical contact and chemical action; the active sites comprise copper nano species, sulfur vacancy defects and amino groups; the copper nano species are copper nano particles or clusters, and the valence state of copper is 0 and / or + 1 valence amino is grafted on the surface of the composite carrier through an organic long chain. The catalyst provided by the invention can greatly improve the yield and selectivity of methanol prepared by photocatalytic reduction of carbon dioxide.

The invention discloses a nanorod-shaped Cu1.8 S material as well as a preparation method and application thereof. The preparation method comprises the following steps: adding ascorbic acid into a copper ion solution, then adding Na2S or K2S, stirring for reaction, centrifuging and washing to obtain a nanorod-shaped Cu1.8S material; the pH value of the copper ion solution is 2-4. The nanorod-shaped Cu1.8S material belongs to a hexagonal crystal system, the center of Cu and S atoms of the first coordination form three Cu-S coordination with the average bond length of # imgabs0 #, the synthesized material conforms to the crystal form characteristics of Cu1.8S, and the material has application prospects in thermoelectricity, photocatalysis and water treatment.

The invention belongs to the technical field of optical detectors. The invention provides a preparation method of a broadband optical detector for dynamic encryption communication. The preparation method comprises the following steps: S1, providing a SiO2 / Si substrate; s2, sequentially transferring a first transition metal sulfide and a second transition metal sulfide on the SiO2 / Si substrate in a directional transfer manner to form a transition metal sulfide layer; s3, spin-coating a PbSe QDs solution or a PbS QDs solution on the transition metal sulfide layer to form a quantum dot film with uniform quantum dots; s4, an EDT acetonitrile solution is dropwise added to the surface of the quantum dot thin film, standing reaction is conducted for preset time, and then spin coating is conducted to remove redundant ligands and reaction by-products; and S5, placing the mixed dimension quantum dot / transition metal sulfide heterostructure optical detector on a heating table for annealing treatment to complete the preparation of the mixed dimension quantum dot / transition metal sulfide heterostructure optical detector. Wherein the energy barrier at the quantum dot / transition metal sulfide heterostructure can be independently and cooperatively regulated and controlled through the drain-source voltage and the gate-source voltage, and the confidentiality of the photoelectric detector can be improved.

The present invention discloses a TBC solar cell with doped materials, a preparation method and equipment, comprising the following steps: S1: placing a silicon wafer to be processed in an SDE tank for SDE treatment, and using a KOH treatment solution; S2: using PECVD (plasma enhanced chemical vapor deposition) to in-situ dope the back of the silicon wafer obtained in S1 to prepare a tunneling layer and a boron-doped polysilicon layer; S3: using a picosecond laser to process the back of the silicon wafer obtained in S2 to form a first laser ablation zone; S4: placing the silicon wafer obtained in S3 in an RCA tank for RCA cleaning; S5: using PECVD to in-situ dope the first laser ablation zone of the silicon wafer obtained in S4 to prepare a tunneling layer and an arsenic-doped polysilicon layer. The present invention solves the problem of low cell efficiency caused by poor passivation uniformity of phosphorus-doped polysilicon in TBC cells by in-situ doping of arsenic-doped polysilicon layers on silicon wafers, and the cell efficiency can be improved by up to 0.5%.

The invention discloses a preparation method of an ITO / Au (at) CdS (at) ALP photoelectrochemical sensor for rapidly detecting organophosphorus pesticides. The method comprises the following steps: preparing Au (at) CdS NPs, and modifying the surface of the Au (at) CdS NPs with alkaline phosphatase to construct the sensor; different from a traditional photoelectrochemical sensor, a target substance is detected by causing change of system impedance or introducing (removing) a photoelectrochemical material, the intensity of a photoelectric signal is changed by changing the content of an electron donor in a system, and the preparation method is simple to operate, does not need a complex modification process, and is suitable for large-scale production. The method has good reproducibility and stability, and can rapidly, sensitively and accurately detect the organophosphorus pesticide.

The utility model discloses a fixing structure of a distributed photovoltaic panel of an expressway, which relates to the technical field of photovoltaic panel installation, and is characterized in that the fixing structure of the distributed photovoltaic panel of the expressway comprises four groups of cement bases, two cement bases are provided with first supporting rods, and the first supporting rods are provided with second supporting rods; the other two cement bases are provided with telescopic rods used for adjusting angles, second supporting rods are arranged between the telescopic rods and the supporting rods, a mounting frame body is arranged above the telescopic rods and the first supporting rods, sliding grooves are formed in the mounting frame body in a vertically symmetrical mode, and a plurality of photovoltaic panel bodies are arranged in the mounting frame body. The photovoltaic panel has the advantages that through the fixing assembly, the clamping column at the bottom of the photovoltaic panel body is aligned with the fixing assembly to be placed in, then the first handle is rotated, the clamping plate clamps the clamping column, and due to the fact that the clamping plate and the clamping column are both provided with threaded lines, fixing is firmer, and the photovoltaic panel is not prone to falling off. And the fixing is more convenient.

The invention relates to the technical field of photocatalysts, in particular to a nonmetal plasmon heterojunction material, a preparation method and application thereof and a method for preparing p-aminophenol through reduction of p-nitrophenol. The nonmetal plasmon heterojunction material provided by the invention comprises a C3N4 nanosheet and a WO3-x nanoplate (x is 0.1 to 0.3) positioned on the surface of the C3N4 nanosheet. The WO3-x local surface plasmon characteristic can effectively expand the spectral response range of the non-metal plasmon heterojunction material in a visible region to a near-infrared region, and the light absorption efficiency of the non-metal plasmon heterojunction material is remarkably enhanced. The nonmetal plasmon heterojunction material provided by the invention can realize efficient reduction of p-nitrophenol based on the synergistic effect of an interface heterojunction, a built-in electric field and oxygen vacancies, is high in selectivity, has excellent photocatalytic activity for reduction of p-nitrophenol, and is excellent in photocatalytic activity stability.

The present application relates to the technical field of laser plastic welding, and specifically discloses a modified polycarbonate light-absorbing transparent plastic for laser welding and a preparation method thereof. The modified polycarbonate light-absorbing transparent plastic for laser welding comprises the following raw materials: polycarbonate, polyamide, thermoplastic polyester elastomer, light-absorbing slurry, lubricant, and antioxidant; the preparation method comprises pre-drying the polycarbonate, adding the polyamide, thermoplastic polyester elastomer, light-absorbing slurry, lubricant, and antioxidant into a mixer, stirring and mixing, and then extruding and granulating to obtain the obtained plastic; the present application uses polycarbonate, polyamide, and thermoplastic polyester elastomer together to produce laser welding plastics, and all of the three are thermoplastic materials with good processability, and their common use can achieve complementary characteristics, significantly improve the overall strength, toughness, thermal stability, and impact resistance of the plastic for welding, and optimize the optical properties of the plastic for welding, thereby improving the laser welding efficiency and welding quality.

The application relates to the photovoltaic technical field and provides a back contact solar cell, a preparation method thereof, a laminated cell and a photovoltaic module. The back contact solar cell comprises a substrate including oppositely arranged first and second surfaces, the second surface includes alternately arranged first and second regions, the first region includes a first rough surface and a first plane, and in the thickness direction of the substrate, the first plane is convex to the side away from the first surface relative to the first rough surface, and the second region includes a second rough surface; a first doped layer is arranged on the first region; a first electrode is electrically connected with the first doped layer, and in the thickness direction of the substrate, the first electrode at least partially overlaps with the first plane; a second doped layer is arranged on the second region, and the doping type of the second doped layer is different from that of the first doped layer; and a second electrode is electrically connected with the second doped layer.

This invention discloses a geological disaster monitoring system based on a three-dimensional structured quantum dot imaging device, comprising a MEMS structured light projection module, a short-wave infrared quantum dot imaging module, a synchronization control and signal processing module, and a data processing and disaster early warning module. The MEMS structured light projection module uses a dual-axis MEMS micromirror to perform two-dimensional scanning of short-wave infrared laser light to form a structured light pattern. The short-wave infrared quantum dot imaging module employs a heterogeneous structure with a three-dimensional structured electron transport layer conformally coated with a lead sulfide quantum dot photosensitive layer to enhance short-wave infrared light absorption efficiency and carrier separation efficiency. The synchronization control and signal processing module achieves nanosecond-level time synchronization. The data processing and disaster early warning module monitors surface cracks, landslides, and subsidence areas through three-dimensional point cloud reconstruction and multi-temporal deformation inversion. This invention has the advantages of wide spectral response, high sensitivity, strong low-light imaging capability, and high three-dimensional reconstruction accuracy.

The invention provides an N-type TOPCon battery and a preparation method thereof. The method comprises the following steps: depositing a tunneling oxide layer and a Poly layer on the surface of a silicon wafer; performing phosphorus diffusion on the silicon wafer on which the tunneling oxide layer and the Poly layer are deposited, so that a phosphorus-doped Poly layer is formed on the back surface of the silicon wafer; and carrying out laser processing on the phosphorus-doped Poly layer in a non-grid line area on the back surface of the silicon wafer so as to remove the phosphorus-doped Poly layer in the non-grid line area. According to the preparation method of the N-type TOPCon battery provided by the invention, the phosphorus-doped polycrystalline silicon in the non-grid line region on the back surface of the silicon wafer is subjected to laser treatment, so that on one hand, the phosphorus-doped polycrystalline silicon in the non-grid line region on the back surface of the silicon wafer is removed, the light absorption efficiency of a long wave band is enhanced, and the conversion efficiency of the battery is improved; and on the other hand, through laser treatment, the phosphorus-doped polycrystalline silicon in the grid line region on the back surface of the silicon wafer is changed from disorder to order, so that the series resistance of the battery is reduced, and the short-circuit current of the battery is improved.

The invention discloses an intelligent clothes airing and drying robot and a working method thereof. The first driving motor drives the driving disc to drive the arc-shaped rotating doors to slide in the forward direction or the reverse direction so that the gaps can be opened or closed, meanwhile, the arc-shaped grooves in the driving disc push the clothes airing rod shells to synchronously move outwards or inwards through the first cylindrical pins, the first gears on the clothes airing rod shells are sequentially meshed with the tooth grooves in the rack rods, and therefore the clothes airing rod shells can rotate in the forward direction or the reverse direction. The hooks rotate forwards or reversely, so that the clothes are parallel to the tangential direction or the radial direction of the driving disc; in sunny weather, the moving device drives the moving shell to move out of a room, the first driving motor drives the driving disc to rotate forwards, the clothes are moved out of the gaps to be aired, in cloudy and rainy weather, the clothes are located in a closed space formed by the moving shell, the fixed disc, the arc-shaped rotating doors and the arc-shaped inserting plates, and the fan heater in the moving shell works. And the clothes are dried. The clothes airing and drying device can achieve airing and drying work of clothes, and has high airing efficiency and clothes drying efficiency.

The invention relates to a graphene / Cu NPs / silicon heterojunction-based Schottky solar cell preparation method, which relates to the photovoltaic technical field, and comprises the following steps: 1) pre-treating a silicon wafer; 2) evaporating a copper nano film on the surface of the pretreated silicon wafer; 3) depositing a graphene film on the copper nano film; 4) carrying out annealing treatment on the heterojunction; 5) evaporating an electrode layer on the back surface of the silicon wafer; and 6) evaporating an electrode layer on the front surface of the silicon wafer. According to the preparation method of the Schottky solar cell based on the graphene / Cu NPs / silicon heterojunction, the photoelectric conversion efficiency of the Schottky solar cell is remarkably improved to 15% or above, meanwhile, the material cost is reduced to 1 / 100 of that of a traditional precious metal system, and 2-5 nano copper nanoparticles formed after annealing have triple functions in the cell at the same time, so that the photoelectric conversion efficiency of the Schottky solar cell is greatly improved. As a back electrode material, the material cooperates with a silver-aluminum electrode to provide a low-resistance conductive path, the contact resistance is lower than 0.1 ohm square centimeter, an efficient Schottky junction is formed with a silicon substrate interface to enhance light capture, and the light absorption efficiency is improved by 30%.

The application discloses a kind of tannin-based Mn-Fe diatomic metal polyphenol nano-carrier loaded hypocrellin B nano-assemblies and its preparation method and application.The nano-assemblies use tannin as ligand, by step coordination driven self-assembly strategy, first with Mn 2+ Forming pre-assembly template, then introducing Fe 3+ Constructing Mn-Fe diatomic metal polyphenol network with atomic level uniform dispersion, and loading traditional Chinese medicine source photosensitizer hypocrellin B to obtain nano-preparation.The preparation realizes Fe 2+ / Fe 3+ Self-circulation, and can sustainably catalyze H2O2 in tumor microenvironment to generate hydroxyl radical, realizes long-acting chemical kinetics treatment;Meanwhile, in-situ oxygen production relieves tumor hypoxia, improves photodynamic therapy effect, and consumes glutathione to amplify oxidative stress.The preparation process of the application is mild, and biocompatibility is good, and it breaks through the bottleneck of insufficient effect of traditional treatment in anoxic tumor.

The invention relates to the technical field of texturing additives for monocrystalline silicon wafers, and discloses a texturing additive for a pyramid textured monocrystalline silicon wafer and a preparation method of the texturing additive. Comprising the following raw materials in parts by mass: 1-1.5 parts of organic sulfonate, 1-2 parts of a polyamine high-molecular compound, 1-2 parts of a high-molecular polymer, 0.5-1 part of a surfactant, 0.2-0.5 part of a composite additive and 90-110 parts of deionized water. The composite additive contains a large number of carboxyl groups, hydroxyl groups and amino groups, the adsorption performance of the texturing additive on the surface of the monocrystalline silicon wafer can be enhanced, then a uniform pyramid structure is formed, the reflectivity is reduced, and the contained modified nano titanium dioxide can form a nano composite film on the surface of the monocrystalline silicon wafer, so that the texturing effect is improved. And the surface roughness and the scattering effect are further improved.

The invention discloses a preparation method of a transverse photoelectrochemical solar blind ultraviolet photoelectric detector, and belongs to the technical field of detector preparation. The method comprises the following steps: covering a part of a conductive substrate by using a mask, and preparing a photosensitive material on the uncovered part; taking down the mask, preparing a counter electrode on the exposed part of the conductive substrate, and punching at the position of the counter electrode to penetrate through the electrode and the substrate for injecting electrolyte; and preparing a high-transmittance quartz plate, bonding the high-transmittance quartz plate with the above structure by using a sarin film with the thickness of 50-60 [mu] m, then injecting an electrolyte through the hole in the electrode, and then sealing the small hole to form the transverse PEC type photoelectric detector. According to the PEC photoelectric detector, the photo-anode and the counter electrode are arranged on the same side, namely, the photo-anode and the counter electrode are transversely arranged, the incident surface is made of high-transmittance quartz, compared with a detector with FTO as an electrode, a solar-blind ultraviolet detector can be achieved, and compared with an inverted structure with platinum on quartz as the counter electrode, the solar-blind ultraviolet detector has a larger incident surface and is high in light absorption efficiency and detection efficiency.

The invention relates to a preparation method of a bipolar transistor type silicon-based optical detector with an independent absorption region and a metasurface structure. The detector comprises a top silicon layer (secondary collector region), an n-type silicon layer (collector region), a p-type germanium-silicon layer (base region) and an n-type polycrystalline silicon layer (emitter region) which are arranged on an SOI substrate. And the absorption region is an n-type polycrystalline silicon layer. The method comprises the following steps: epitaxially growing multiple layers of materials on an SOI (Silicon On Insulator) substrate, wherein the multiple layers of materials comprise a Si layer / Si collector region, a SiGe layer / SiGe base region and a polycrystalline silicon layer / polycrystalline Si emitter region; etching the polycrystalline silicon layer and filling SiO2 to form an isolation region; etching to form an emitter region mesa and a collector region mesa, depositing a passivation insulating layer, etching and preparing an electrode contact hole, sputtering and depositing, and manufacturing a metal electrode; and manufacturing a metasurface structure in the polycrystalline silicon layer of the absorption region. According to the device, light detection absorption and photocurrent amplification are separated, structural parameters of an absorption region and the junction area of the bipolar transistor are optimized respectively, high-speed response is achieved, the light absorption efficiency is high, and the absorption detection wavelength is expanded to 1300-1550 nm.

The invention discloses a photovoltaic power generation device and a photovoltaic system, and relates to the technical field of photovoltaic power generation, the photovoltaic power generation device comprises a photovoltaic power generation device main body of a rectangular frame structure, and the outer wall of one side of the photovoltaic power generation device main body is provided with a photovoltaic assembly used for directly converting solar energy into electric energy. An inverter for converting direct-current electric energy generated by the photovoltaic power generation device body into alternating-current electric energy is arranged on the outer wall of the top end of one side of the photovoltaic power generation device body, a cold cleaning mechanism is arranged on the side, close to the photovoltaic assembly, of the photovoltaic power generation device body, and an irrigation mechanism is arranged on the side, away from the photovoltaic assembly, of the photovoltaic power generation device body; shading mechanisms are arranged on the two sides of the photovoltaic module, an active inserting mechanism is arranged on the rear side of the orientation frame, a water storage tank, a guide pipe, a wiping plate and a rotating rod are matched with one another, a cold cleaning mechanism can effectively remove dust, dirt and other impurities accumulated on the plate face, and therefore the clean state of the plate face is kept.

The present invention discloses a Ag3PO4 / Si pyramid array photoelectric catalyst and its preparation method and application. The Ag3PO4 nanoparticles and silicon pyramid arrays are composed of Ag3PO4 nanoparticles. The preparation method is to prepare the silicon pyramid array by metal-assisted wet alkaline etching, and to make the Ag3PO4 nanoparticles grow in situ on the silicon pyramid array to form a composite material by an impregnation method. The silicon pyramid array structure in the present invention enhances the scattering probability of the incident light and can improve the light utilization rate; the loaded Ag3PO4 nanoparticles and the silicon pyramid array form a heterojunction to accelerate the separation of photogenerated carriers; the positive valence band position of Ag3PO4 is utilized to enhance the oxidation degradation ability of the silicon pyramid array; the Ag3PO4 / Si pyramid array photoelectric catalyst of the present invention is a block solid catalyst, which is easier to recycle than the traditional powder catalyst.

The present invention discloses a bismuth oxyhalide oxide and its synthesis method and application, which belongs to the technical field of inorganic photocatalytic materials. The chemical formula of the bismuth oxyhalide oxide is KBi 5.4 Ca 0.3 Te 0.3 9F 0.3 Cl 0.7 The present invention designs multi-element substitution in bismuth-based oxides to increase defect centers in the lattice. The coexistence of multiple elements in the lattice greatly increases the absorption range in the visible light range, thereby increasing the efficiency of light absorption, more effectively hindering the recombination of photogenerated charges to avoid the consumption of photogenerated carriers in the recombination process, improving the photon quantum efficiency, and making the bismuth halide oxide have excellent photocatalytic performance.

The present invention belongs to the technical field of photovoltaic modules, and specifically relates to an integrated thin-film photovoltaic battery group, a double-sided photovoltaic module and a preparation method. The battery group includes a substrate, a first electrode layer, a photovoltaic functional layer including a first charge transport layer and a second charge transport layer, and a second electrode layer. The first surface of the substrate has a series groove, and the series groove has a mask wall B with an angle of 45° to 90° with the substrate reference plane A. In the z direction of the substrate, the depth of the mask wall B is greater than the sum of the thickness of the first electrode layer and the photovoltaic functional layer not including the second charge transport layer and is less than the total thickness of the first electrode layer, the photovoltaic functional layer and the second electrode layer. The first electrode layer, the photovoltaic functional layer and the second electrode layer are sequentially prepared on the projection surface of the x-y plane of the first surface of the substrate, and each monomer thin-film photovoltaic cell is formed by means of the series groove. The first electrode layer of the monomer thin-film photovoltaic cell and the second electrode layer of the adjacent monomer thin-film photovoltaic cell are connected in series to form a battery group, which significantly improves the photoelectric conversion efficiency.