385results about How to "Improve light absorption efficiency" patented technology

The invention relates to a PVA hydrogel-based photo-thermal evaporation material and preparation and application thereof. The preparation method comprises the following steps: step 1, respectively preparing an aqueous polyvinyl alcohol (PVA) solution, an aqueous nanometer photo-thermal material dispersion solution, an aqueous glutaraldehyde solution and a low-concentration hydrochloric acid solution; 2, fully mixing and stirring the aqueous PVA solution, the aqueous nanometer photo-thermal material dispersion solution, the aqueous glutaraldehyde solution and the low-concentration hydrochloricacid solution in the step 1 according to a certain sequence under a certain temperature condition; and 3, transferring the mixed and stirred product into a forming mold when the mixed and stirred product is not cured, and carrying out standing until a cross-linking reaction is complete, thereby obtaining the hydrogel material. The preparation method disclosed by the invention has the beneficial effects that preparation process is environment-friendly, pollution-free, simple and feasible; preparation cost is low; the obtained hydrogel can be used as an ideal photo-thermal evaporation and solarseawater desalination material; and the prepared hydrogel has high light absorption efficiency, photo-thermal conversion efficiency and evaporation efficiency, and can be applied to the field of solarseawater desalination.

The invention belongs to the technical field of electronic technologies and photoelectronic imaging technologies, in particular relates to a single-photon avalanche diode and a three-dimensional CMOS (Complementary Metal Oxide Semiconductor) image sensor based on the diode. The single-photon avalanche diode of the invention improves the traditional rectangular photosensitive PN junction into a regular octagon and can conveniently and simply weaken edge breakdown and improve gain uniformity. A two-dimensional pixel array of the three-dimensional CMOS image sensor based on the diode comprises unit pixels of the regular octagon-shaped single-photon avalanche diode and is arrayed in a honeycomb-shape, thereby being convenient for interpolation and improving resolution in horizontal and vertical direction.

The invention discloses a preparation method of a metal nanostructure. The preparation method comprises the steps of (1) manufacturing a mask plate; (2) providing a clean and dry base plate, uniformly coating a positive ultraviolet photoresist on the base plate, and pre-baking to ensure that the positive ultraviolet photoresist is solidified to form a photoresist base plate; (3) overlapping the mask plate on the photoresist base plate, and performing exposure, development, residual adhesive removal and hardening under ultraviolet light to obtain a forming mold with shape grooves of a nanostructure graph; (4) depositing a metal in the forming mold by adopting a chemical synthetic method; (5) soaking the forming mold deposited with the metal in an acetone solution, and performing ultrasonic adhesive removal to obtain the metal nanostructure of the nanostructure graph. The preparation method disclosed by the invention is simple in process and high in efficiency; the shape, size and position of the prepared metal nanostructure can be accurately controlled, and the light extraction efficiency and light absorption efficiency of a metal nanostructure material are effectively improved.

The invention relates to a surface-texturing n-type ZnO-based transparent conductive film and a preparation method thereof. The invention forms a large amount of microporous structures with regular arrangement, uniform structure, good communication and a certain depth on the film surface of the conductive film. The surface-texturing film has excellent light capture performance and extremely high conductivity simultaneously. The surface-texturing n-type ZnO-based transparent conductive film prepared by direct current magnetic control continuous sputtering has simple process and easily monitored quality, is suitable for large-scale production, can keep excellent column-shaped crystal structure of the body film, has complete communication between holes and keeps high conductivity of the ZnO-based film; the micropore on the texture surface has excellent uniformity and repeatability compared to the two traditional methods; furthermore, the depth and the diameter of the hole are controllable within a certain range; the average transmissivity of the film layer at the visible light area reaches more than 90%, the mobility is up to 35.4cm[2]/V.S, the resistivity is 1.003*10[-4]Omega.cm and the sheet resistance reaches 0.9 Omega.

The invention relates to an SnO2 porous structure perovskite photovoltaic cell and a preparation method thereof, which belong to the field of photoelectric materials and devices. An electron-transporting layer of the perovskite photovoltaic cell is a tin oxide compact layer covering above a transparent conducting substrate and a tin oxide porous layer covering above a tin oxide compact layer film. The porous structure SnO2 perovskite porous photovoltaic cell prepared based on a low temperature obtains 12.58 percent of high photoelectric conversion efficiency, which is higher than a plane structure perovskite film photovoltaic cell adopting an SnO2 compact layer as an electron-transporting layer. The oxide SnO2 is acid and alkali resistant, large in band gap width, and low in ultraviolet attenuation as a cell window layer, and has significance on improving the stability of performances of devices; in addition, the preparation method is simple in process, low in cost, and beneficial to scale production, and has wide business application prospect.

The invention relates to high-intensity photocatalytic cement-based composite slurry. The high-intensity photocatalyst cement-based composite slurry comprises a photocatalyst composite body, cement, aggregate, an active mixture, a polymer additive, fibers, a water reducing agent and water, wherein the photocatalyst composite body comprises modified rare-earth elements and N co-doped TiO2, activated carbon and conductive fillers. According to the preparation method, the slurry is prepared through the raw materials and then treated by pouring and maintaining and molding with high humidity under a high temperature and other processes to form a face brick and an exterior wall cladding. The product detection result shows that the ultimate bending strength of the product reaches 25 to 30MPa, the ultimate compressive strength reaches 150 to 200MPa, the shock strength reaches 15 to 20kJ/m<2>, an absorption band of a photocatalyst is subjected to redshift to reach a 600nm visible region, the degradation rate for a 1mg/L rhodamine aqueous solution after 6 hours reaches 85 to 90%, and therefore, the product is high in mechanical strength and high in capacity of degrading pollutants with the visible light in a photocatalytic manner.

The invention discloses a bismuth tungstate composite photocatalyst modified by a nitrogen-doped carbon quantum dot and a preparation method and application thereof. The composite photocatalyst is characterized in that bismuth tungstate is taken as a carrier, and is modified with the nitrogen-doped carbon quantum dot. The preparation method comprises the following steps: mixing bismuth nitrate, sodium tungstate and water, and stirring the mixture to obtain a bismuth tungstate precursor solution; mixing the bismuth tungstate precursor solution with a nitrogen-doped carbon quantum dot solution, and stirring the mixture to obtain a mixed solution; performing a hydrothermal reaction to obtain the bismuth tungstate composite photocatalyst. The composite photocatalyst has the advantages of environmental friendliness, high photo-induced electron-hole separating efficiency, high light absorbing efficiency, high photocatalysis activity, high photocatalysis stability and high corrosion resistance; the preparation method has the advantages of simple preparation process, low raw material cost, and easiness in controlling operation conditions. The composite photocatalyst is used for catalyzing degradation of antibiotic wastewater, and has the advantages of simple application method, high degrading efficiency and high repeatability, and has a very good practical application prospect.

The invention discloses a single photon avalanche diode, a manufacturing method thereof, a detector array, and an image sensor. The back-illuminated single-photon avalanche diode is provided with a light trapping structure and a side wall reflecting wall. Incident light is scattered to all angles after being reflected, scattered and refracted by the light trapping structure, and the effective optical path of the light in the back-illuminated single-photon avalanche diode can be prolonged under the reflection action of the side wall reflection wall, so that the absorption efficiency of the light in the back-illuminated single-photon avalanche diode is improved. The invention relates to the manufacturing method of the back-illuminated single-photon avalanche diode, which realizes the manufacturing of the back-illuminated single-photon avalanche diode. Due to the fact that the photoelectric detector array and the image sensor comprise the back-illuminated single-photon avalanche diode, the light absorption efficiency of the photoelectric detector array and the image sensor is effectively improved.

The invention relates to hexagonal boron nitride, particularly a method for preparing wafer-grade large-size hexagonal boron nitride on a substrate. The method comprises the following steps: growing a hexagonal boron nitride film on Cu foil in a controllable way; after Borazane-carrying gas leaves the quartz tube, bending the Cu foil substrate into a semicircular column, putting in a quartz boat, pushing into a heating region, vacuumizing, heating, introducing H2 when the temperature reaches the set value to perform surface oxide removal treatment, further raising the growth temperature of the third region, and heating a precursor of the first region; when the set values of the first region and third region are simultaneously reached, introducing H2 and Borazane gas generated by Ar delivery from the quartz tube into a reaction chamber to react until the Cu foil is completely covered; after the reaction finishes, taking out the Cu foil, thereby obtaining the large-area hexagonal boron nitride film on the Cu foil; and applying a PMMA (polymethyl methacrylate) layer by spin coating, dissolving away the Cu substrate, transferring the PMMA/hexagonal boron nitride film onto the substrate, and removing the PMMA layer on the sample surface.

The invention discloses a preparation method of a nitrogen (N)-doped titanium dioxide (TiO2) porous film on the surface of a stainless steel matrix, belonging to the field of the preparation technology of photocatalytic materials. The method is characterized by a technical scheme for preparing a high film-based bonding strength anatase type N-doped TiO2 porous film on a stainless steel matrix, and comprises the following steps of: firstly preparing a Ti-N diffusion coating layer composed of a Ti-N diffusion layer in the matrix and a surface Ti-N compound film on the surface of a stainless steel workpiece by use of a double glow plasma surface alloying technology; then performing anode oxidation on the Ti-N film on the workpiece surface to generate an N-doped TiO2 porous film; and finally performing thermal treatment in the air to prepare an anatase type N-doped TiO2 porous film. By adopting the preparation method disclosed by the invention, the prepared N-doped TiO2 porous film has the advantages of large specific surface area and good film-based bonding strength, and also has visible light catalysis performance; and the stainless steel after the N-doped TiO2 surface modification can be applied to the fields of photocatalysis self-cleaning, photocatalysis sterilization and the like.

Belonging to the technical field of nano-material preparation, the invention in particular relates to a ZnS/rGO/CuS nano-photocatalyst and a preparation method thereof. ZnS/CuS is a widely applied photocatalyst, the morphology of ZnS/CuS can be further regulated to increase the exposure number of active sites, thereby improving the photocatalytic activity of the photocatalyst. The zeolite imidazole framework material ZIF-8 has high specific surface area and abundant pore structures, and provides favorable conditions for construction of the photocatalyst. The preparation method of the materialincludes: firstly preparing graphene oxide (GO) loaded ZIF-8, and taking the product as the template to prepare the GO loaded ZnS porous nano-material ZnS/rGO, and finally introducing nano-CuS into the porous ZnS/rGO system to prepare the target product, i.e. ZnS/rGO/CuS nano-photocatalyst. The ZnS/rGO/CuS nano-photocatalyst provided by the invention has the advantages that: the ZnS prepared withZIF as the template has a super-large specific surface area, and provides more loading sites for CuS, thereby increasing the exposure number of active sites, and the introduction of graphene oxide cansignificantly improve the carrier conduction capacity, thereby significantly improving the photocatalytic activity of the photocatalyst.

The invention relates to a preparation method of a nanoscale laser array, in particular to a preparation method of a nano laser array using perovskite nanowires in directional alignment as a gain medium and a resonant cavity. The one-dimensional nanoscale perovskite nanowires in directional alignment are used as the gain medium and the resonant cavity, the perovskite nanowires in directional alignment in a plane are successfully prepared, the nanoscale laser array is realized, and the problem of a nanoscale light source in a high-density photon integration system is effectively solved. The chemical formula of the perovskite nanowires in directional alignment is CsPbX3, the diameter is 200 to 800 nm, and the length is 10 to 80 microns. In a synthetic method, CsX powder and PbX2 powder are taken as raw materials, annealed M-Plane sapphire is taken as a substrate, and the nanoscale laser array is prepared by adopting a chemical vapor deposition method. The preparation method also has extremely important significance for realizing the high-density photon integration system.

The invention belongs to the technical field of polymer material synthesis, discloses a water-soluble carbon quantum dot sustained-release microcapsule and a preparation method and application thereof. The water-soluble carbon quantum dot sustained-release microcapsule is composed of a capsule core containing water-soluble carbon quantum dots and a capsule wall. The method is as follows: (1) underthe condition of mixing, a water phase comprising the carbon quantum dots, a crosslinker, a catalyst, a water soluble emulsifier and water is added to an oil phase comprising an oil soluble emulsifier and an organic solvent dropwise for emulsifying to form initial emulsion; and (2) under low-speed stirring, the initial emulsion is added to an outer water phase comprising wall material PVA, a stabilizer and water to form W / O / W multiple emulsion; and the water-soluble carbon quantum dot sustained-release microcapsule is obtained by continued crosslinking reaction, centrifuging, washing anddrying after the completion of the adding. The microcapsule has high fluorescence intensity, high core coating rate, low carbon quantum dot loss, controllable release and high light absorption efficiency, and is used in plant photosynthesis and other fields.

The invention provides a light controllable type quantum dot backlight source. The light controllable type quantum dot backlight source comprises a blue light source module and an optical plate, wherein the blue light source module and the optical plate are sequentially stacked. A quantum dot layer is arranged on the in-light end surface of the optical plate, and a microstructure is arranged on the out-light end surface of the optical plate. According to the light controllable type quantum dot backlight source, the high precision ink spraying printing technology is adopted, thus a quantum dot convex len is formed on the end surface of the optical plate; the light effect and divergence angle of dot light source are improved; the utilization rate of quantum dot materials is increased. According to the light type of the light source on the out-light surface, the size and density of pixels in the small partition are adjusted; the control on the uniformity of a backlight plate is realized. The concentration of red and green quantum dot ink, the relative proportion and resolution rate distribution of red and green quantum dots are adjusted; the accuracy control on the chromaticity, color temperature and wavelength of emitting light are realized. The shape, size and depth of the superfine microstructure optical plate surface structure are adjusted; high precision ink spraying printing design is combined and the overall light effect of the light controllable type quantum dot backlight source is improved.

The invention discloses a heterojunction solar cell and an interfacing processing method and preparing technology thereof. According to the interface processing method of the heterojunction solar cell, in the preparing technology of the heterojunction solar cell, highly doping processing is conducted on the front surface of a crystalline silicon wafer with the ion implantation technology or the diffusion technology so that a heavy doped layer can be formed on the front surface of the crystalline silicon wafer, and then the Fermi level of the surface of the crystalline silicon water of the heterojunction solar cell is changed and an built-in electric field is enhanced. According to the method, the built-in electric field of the substrate interface of crystalline silicon can be enhanced, separation and conveyance of current carriers on the border of a depletion region can be promoted more effectively, film/crystalline silicon abrupt junction formation is facilitated, the width of a depletion layer on the base region of the crystalline silicone is reduced, light absorption efficiency is improved, recombination losses of the current carriers are reduced, and the voltage characteristic of a heterojunction efficient battery is improved.

The present invention provides a zinc-doped prussian blue nanoparticle preparation method, wherein a hexaoyanoferrous acid substance and zinc methacrylate are adopted as raw materials, an organic acid with a specific concentration is matched to prepare the zinc-doped prussian blue nanoparticles having double bond on the surface, and an organic layer having carboxyl, amino, hydroxyl and other functional groups is modified on the nanoparticle surface through a polymerization reaction. Another purpose of the present invention is to provide the zinc-doped prussian blue nanoparticles prepared through the preparation method, and clinical applications of the zinc-doped prussian blue nanoparticles as the contrast agent in magnetic resonance imaging and photoacoustic bifunctional imaging. According to the present invention, the prepared zinc-doped prussian blue nanoparticles have characteristics of good water solubility, good biocompatibility and good light-heat stability, and amino, carboxyl or hydroxyl and the like are modified on the nanoparticle surface so as to provide favorable conditions for the further surface modification and antibody grafting.