Heterojunction solar cell and interfacing processing method and preparing technology thereof

Abstract

The invention discloses a heterojunction solar cell and an interfacing processing method and preparing technology thereof. According to the interface processing method of the heterojunction solar cell, in the preparing technology of the heterojunction solar cell, highly doping processing is conducted on the front surface of a crystalline silicon wafer with the ion implantation technology or the diffusion technology so that a heavy doped layer can be formed on the front surface of the crystalline silicon wafer, and then the Fermi level of the surface of the crystalline silicon water of the heterojunction solar cell is changed and an built-in electric field is enhanced. According to the method, the built-in electric field of the substrate interface of crystalline silicon can be enhanced, separation and conveyance of current carriers on the border of a depletion region can be promoted more effectively, film/crystalline silicon abrupt junction formation is facilitated, the width of a depletion layer on the base region of the crystalline silicone is reduced, light absorption efficiency is improved, recombination losses of the current carriers are reduced, and the voltage characteristic of a heterojunction efficient battery is improved.

Description

technical field [0001] The invention relates to a heterojunction solar cell and its interface treatment method and preparation process, belonging to the technical field of heterojunction solar cells. Background technique [0002] At present, the technical advantage of heterojunction high-efficiency solar cells lies in the high opening voltage characteristics determined by the heterojunction, and the excellent film / crystalline silicon interface directly contributes to the opening voltage performance of heterojunction cells. Traditional interfacial properties mainly refer to the passivation of dangling bonds on the surface of crystalline silicon. However, in addition to the dangling bond-related defects in the separation and transport of photogenerated carriers, the strength of the built-in potential field at the interface is directly related to whether the carriers at the interface can be smoothly "swept" into the emitter. Finally, it is collected by electrodes, the treatmen...

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Problems solved by technology

However, in addition to the dangling bond-related defects in the separation and transport of photogenerated carriers, the strength of the built-in potential field at the interface is directly related to whether the carriers at the interface can be smoothly "swept" into the emitter. However, it is finally collected by electrodes, the interface treatment of thin film / crystalline silicon and the modulation of internal potential field are the difficulties in the research and development of heterojunction cells.

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