66results about How to "Enhanced built-in electric field" patented technology

The present invention discloses a silicon-based germanium photodetector. The silicon-based germanium photodetector comprises an optical waveguide layer, a silicon oxide layer and a silicon substrate which are sequentially stacked from top to bottom; the optical waveguide layer includes an optical coupling region, a planar optical waveguide region and an optical output region which are distributed sequentially along the propagation direction of optical signals; a coupling grating for receiving the optical signals and guiding the optical signals to the planar optical waveguide region is formed in the coupling region; and the silicon-based germanium photodetector further comprises a germanium layer stacked on the optical output region, a silicon covering layer stacked on the germanium layer, a first electrode formed on the silicon covering layer, and a second electrode formed on the optical output region, wherein the germanium layer receives the optical signals from the optical output region and converts the optical signals into electrical signals. According to the silicon-based germanium photodetector of the invention, the silicon covering layer is adopted, so that bandwidth is greatly improved, the dark current of the device is greatly reduced, and therefore, the comprehensive performance index of the device can be improved, and the requirements of high-speed optical communication and optical interconnection systems can be better satisfied.

The invention discloses a single-layer organic solar cell, which comprises a transparent insulating substrate, a transparent anode electrode layer, a metal nanoparticle layer, a photosensitive layer and a cathode electrode layer sequentially stacked on the transparent insulating substrate. The work function value of the metal nanoparticles in the particle layer is higher than that of the transparent anode electrode layer. The metal nanoparticle layer is set in the single-layer organic solar cell of the present invention, thereby further enhancing the built-in electric field of the single-layer organic solar cell device, thereby improving the exciton splitting efficiency of the pair, and finally improving the efficiency of the single-layer organic solar cell. Energy conversion efficiency; the preparation method of a single-layer organic solar cell device uses stable sputtering and vacuum evaporation to form each layer of the solar cell device in sequence, so that the connections between the layers are tight and firm, so that the solar cell device The performance is stable, the production efficiency is high, and it is suitable for industrial production.

The invention relates to a heterojunction solar cell and a manufacturing method thereof and belongs to the technical field of solar cell apparatuses. The heterojunction solar cell is characterized in that: a first-type noncrystal silicon carbide layer is arranged between a transparent conductive film and a first-type noncrystal silicon and the thickness of the layer is 10 to 50nm; and a transparent conductive film is arranged between a quasi-monocrystal silicon layer and a metal film and the thickness of the layer is 100 to 300nm. The manufacturing method comprises the following steps of: manufacturing a double-layer porous silicon by using a p-type (or n-type) monocrystal silicon wafer, growing a p-type (or n-type) crystal silicon layer and an intrinsic crystal silicon layer successively after H2 annealing, performing H2 treatment on the surfaces of samples sequentially to manufacture the intrinsic crystal silicon layer, an n-type (or p-type) noncrystal silicon layer and an n-type (or p-type) noncrystal silicon carbide layer, and performing layer transfer after the manufacturing of an apparatus is finished. A silicon wafer can be reused on the premise of obtaining a high-quality silicon film; the conductivity and the transmissivity of a window layer are higher; and excellent electrode contact can be realized at a low temperature.

The invention provides a method for preparing a silicon heterojunction solar cell containing a composite emission layer. The method includes the steps that an amorphous silicon back field N is deposited on one face of a substrate C on which a double-faced intrinsic amorphous silicon passivation layer I is deposited, an amorphous silicon layer P2 with the uniform structure is prepared on the face opposite to the amorphous silicon back field N under the conditions that doping concentration, hydrogen dilution and power density are low, a nanocrystalline silicon layer P1 with the uniform structure is prepared under the conditions that the doping concentration, the hydrogen dilution and the power density are improved, and an amorphous silicon / nanocrystalline silicon composite structure formed by the two silicon films serves as the emission layer of the silicon heterojunction solar cell. Materials have the advantages of being high in transmittance and conductivity through the structure, on the basis, the passivation effect of the surface of crystalline silicon can be improved, short wave response and output characteristics of the cell are improved, and the method for preparing the silicon heterojunction solar cell is simple and easy to carry out.

The invention discloses a heterojunction solar cell and an interfacing processing method and preparing technology thereof. According to the interface processing method of the heterojunction solar cell, in the preparing technology of the heterojunction solar cell, highly doping processing is conducted on the front surface of a crystalline silicon wafer with the ion implantation technology or the diffusion technology so that a heavy doped layer can be formed on the front surface of the crystalline silicon wafer, and then the Fermi level of the surface of the crystalline silicon water of the heterojunction solar cell is changed and an built-in electric field is enhanced. According to the method, the built-in electric field of the substrate interface of crystalline silicon can be enhanced, separation and conveyance of current carriers on the border of a depletion region can be promoted more effectively, film / crystalline silicon abrupt junction formation is facilitated, the width of a depletion layer on the base region of the crystalline silicone is reduced, light absorption efficiency is improved, recombination losses of the current carriers are reduced, and the voltage characteristic of a heterojunction efficient battery is improved.

The invention discloses a single-layer organic solar cell, which comprises a transparent insulating substrate, and a transparent anode electrode layer, a photosensitive layer and a cathode electrode layer which are sequentially formed on the transparent insulating substrate in an overlapped manner; a metal nano-particle layer is formed on at least one surface of the cathode electrode layer in the overlapped manner; and the power function value of metal nano particles in the metal nano-particle layer is less than the power function value of the cathode electrode layer. The metal nano-particle layer is arranged in the single-layer organic solar cell, so a built-in electric field of a single-layer organic solar cell device is enhanced, the separation efficiency of right excitons is improved, and the energy transfer efficiency of the right excitons is finally enhanced; by a making method for the single-layer organic solar cell device, all the layers of the single-layer organic solar cell device are sequentially formed and tightly and firmly connected, so the single-layer organic solar cell device is stable in performance, high in production efficiency and applicable for industrialized production.

The invention discloses a heterojunction solar battery and a preparation method therefor. The preparation method comprises the steps of providing a substrate; depositing an intrinsic layer on the two sides of the substrate separately; depositing n type doping layers and p type doping layers on the intrinsic layer on the two sides of the substrate respectively, wherein at least two layers of n type doping layers and / or p type doping layers are provided; and the doping concentration of each layer of the n type doping layers and / or p type doping layers is progressively increased in a longitudinal direction far from the substrate; and forming a transparent conductive layer and an electrode layer on the n type doping layers and p type doping layers in sequence separately. Therefore, the battery conversion efficiency and production efficiency are improved.

The invention discloses a p-type amorphous silicon carbon-nanoparticle silicon multi-quantum well window layer material. The p-type amorphous silicon carbon-nanoparticle silicon multi-quantum well window layer material is a multilayer material which is prepared by using a cascading deposition method and formed by alternately growing broadband gap amorphous silicon carbon thin films and narrowband gap p-type nanoparticle silicon thin films, wherein the thickness of each amorphous silicon carbon thin film is between 2 nm and 8 nm; the thickness of each p-type nanoparticle silicon thin film is between 2 nm and 8 nm; by repeated deposition, a p-type amorphous silicon carbon-nanoparticle silicon multi-quantum well material of which the total thickness is between 20 nm and 50 nm is formed; and the p-type amorphous silicon carbon-nanoparticle silicon multi-quantum well window layer material is applicable to a silicon-based thin film solar cell. The p-type amorphous silicon carbon-nanoparticle silicon multi-quantum well window layer material has the advantages that an optical band gap can reach 2.0 to 3.7 eV, and electric conductivity can reach 0.1 to 5.0 S / cm; and the material is applicable to the silicon-based thin film solar cell, so the open-circuit voltage of the cell can be remarkably improved, the optical absorption loss of a window layer is reduced, the short wave response and short-circuit current density of the cell are improved, and photoelectric conversion efficiency is improved.

The invention discloses a perovskite solar cell based on an organic molecule passivator and a preparation method of the perovskite solar cell, and belongs to the field of solar cells. The structure comprises a transparent conductive substrate, an electron transport layer, a perovskite absorption layer, an organic molecule passivation layer, a hole transport layer and a metal electrode. The organic molecule passivator is at least one of compounds and derivatives thereof, wherein benzene rings of the compounds comprise -COOH or -CH3O, such as p-methoxyphenylacetic acid, anisole and phenylacetic acid. When the passivator is used for passivating the upper surface and the lower surface of the perovskite thin film or the interior of the thin film, the defect density on the surface of the perovskite thin film or in the perovskite thin film can be effectively reduced, non-radiative recombination is inhibited, the built-in electric field of the perovskite thin film is enhanced, and the performance of the perovskite solar cell is improved. The organic molecule passivator provided by the invention is suitable for single-junction perovskite solar cells, perovskite / crystalline silicon or perovskite / perovskite multi-junction laminated solar cells and the like, and has a wide application prospect.

The invention relates to an organic-inorganic hybrid solar cell and a preparation method thereof. The method comprises steps as follows: texturing treatment of an N type silicon wafer, passivating treatment of the N type silicon wafer, preparation of a strontium chloride interface modified film, preparation of a P3HT composite layer, preparation of a PEDOT:PSS composite layer and a Bphen / lithium fluoride composite interface layer, preparation of a front grid electrode and preparation of a rear electrode. The organic-inorganic hybrid solar cell has excellent photoelectric conversion efficiency.

The invention provides a full-inorganic P / N heterojunction antimony selenide / perovskite solar cell and a preparation method thereof. The solar cell comprises an FTO conductive glass substrate, a titanium dioxide (TiO<2>) layer, an inorganic CsPbBrI<2> perovskite layer, a selenized Sb<2>Se<3> layer and a metal counter electrode layer which are sequentially arranged from bottom to top. According tothe invention, the Sb<2>Se<3> is selenized to prepare the selenized Sb<2>Se<3> layer, and the inorganic CsPbBrI<2> perovskite layer and the selenized Sb<2>Se<3> layer are compounded into the heterojunction to prepare the full-inorganic P / N heterojunction antimony selenide / perovskite solar cell. The photoelectric conversion efficiency of the prepared solar cell is greatly improved, and the solar cell has good long-term working stability.

The invention relates to an organic solar cell and a manufacturing method thereof, and belongs to the field of photovoltaic technologies. The organic solar cell comprises an ITO glass substrate, a novel cavity transmission layer, an organic light absorption layer, an electron transmission layer and a reflection electrode; the novel cavity transmission layer is a MoO3 and fluorescent carbon dot composite cavity transmission layer prepared by a solution method, and the thickness of the novel cavity transmission layer ranges from 10 to 50nm. The novel cavity transmission layer is prepared by preparing an ammonium heptamolybdate aqueous solution, preparing a fluorescent carbon dot aqueous solution, preparing a precursor solution of the novel cavity transmission layer, and preparing the novel cavity transmission layer. The novel cavity transmission layer can improve the charge collection capability of the novel cavity transmission layer, enhance a built-in electric field of the device, improve the open-circuit voltage, and finally improve the energy conversion efficiency of the cell. The solar cell is simple in manufacture method, low in cost and suitable for large-scale industrial production.

The invention discloses a nitrogen-doped nickel oxide and zinc oxide near ultraviolet detector of the following structure of Ag / NiO:N / ZnO / FTO conductive glass, and FTO represents fluorine doped indiumoxide. According to the detector, the carrier concentration in NiO is improved, the conductivity is increased, a built-in electric field is enhanced, the forbidden band is narrower, absorption wavelength moves towards the long wave direction, and the detector is highly sensitive to weak UVA near ultraviolet.

The invention discloses a double-sided power generation cadmium telluride thin film solar cell and a preparation method thereof. The double-sided power generation cadmium telluride thin film solar cell comprises a glass substrate layer, a transparent conductive film layer, a window layer, an absorbing layer, a back contact layer, a back electrode layer, a packaging material layer and a backboard glass layer in turn. Copper thiocyanate is used as the material of the back contact layer. Tungsten-doped indium oxide is used as the material of the back electrode layer. The p-type material copper thiocyanate is used as the back contact layer and the tungsten-doped indium oxide is used as the back electrode layer so that transparent back electrode of the cadmium telluride cell can be realized, double-sided power generation can be realized and the generation capacity of the cell can be enhanced; meanwhile, the built-in electric field can be enhanced by the strong p-type back contact so that the Voc and the FF of the cadmium telluride solar cell can be enhanced and the performance of the cell can be enhanced.

The invention discloses a MoS2 / Si heterojunction photovoltaic device with an ITO / Pd double-layer structured composite electrode. The device is of a composite layer layered structure, and sequentially comprises an ITO transparent conductive layer, a Pd metal layer, a MoS2 thin film layer, a Si single crystal substrate with the upper surface and the lower surface being provided with a SiO2 passivation layer and a metal In back electrode from top to bottom. The preparation method comprises the steps that the surfaces of different target materials are sequentially bombarded by using high-energy electrons through mainly adopting a DC magnetic control sputtering technology, a MoS2 target material is firstly bombarded, then a Pd target material is bombarded and finally an ITO target material is bombarded so as to sputter a large number of ions, and the ions are successively deposited at the surface of the Si single crystal substrate on which passivation processing is performed and superimposed into a multi-layer structured material; and a back electrode layer is prepared. The light conversion efficiency of the MoS2 / Si photovoltaic device with the ITO / Pd double-layer structured composite structure is improved over 100% compared with similar products in the prior art. The MoS2 / Si photovoltaic device is simple in process, simple and convenient to control, high in rate of finished products, low in manufacturing cost and suitable for industrial production.

The invention discloses a silicon carbon window layer film with refractive index gradient characteristics and application. The carbon content of the film ranges from 30% to 80%, low discharge power density adjacent to the intrinsic layer is adopted, and the discharge power density is increased gradually with the increase of the thickness of the film according to a formula that P (t) = P0 + A*t, the P is the discharge power, the P0 is the initial power density, the A is a linear rate, the t is the discharge time, discharge power density longitudinal gradient change is implemented finally, and the change of the refractive index at the 400nm wavelength ranges from 2.8 to 2.2; the film is applied to silicon film solar batteries. The film has the advantages that the optical band gap of material ranges from 2.0 to 3.7eV, the electrical conductivity ranges from 0.1 to 5.0 omega*cm, the window layer optical loss is reduced effectively, the filling factors, open circuit voltage and short wave response speed of a solar battery can be increased significantly, and the photoelectric conversion efficiency is improved finally.

The invention discloses a 2D / 2D heterojunction pressure-photocatalyst and a preparation method thereof. The 2D / 2D heterojunction pressure-photocatalyst is composed of a piezoelectric NaNbO3 nano-sheetand a MoS2 nano-layer, and the NaNbO3 / MoS2 heterojunction pressure-photocatalyst is hydrothermally synthesized by adopting a simple two-step process. The 2D / 2D nano NaNbO3 / MoS2 heterojunction can collect fine vibration energy in an environment through a piezoelectric effect to induce the surface to generate electron hole pairs so as to drive the decomposition of organic pollutants; besides, due to the formation of the heterojunction and the synergistic effect of a built-in electric field caused by mechanical vibration, charges are effectively separated, and the photocatalytic activity is effectively enhanced, so that synchronous collection and utilization of mechanical vibration energy and visible light are realized. According to the design of the nano-composite material based on a 2D piezoelectric material, the limitation that a single piezoelectric material serves as a catalyst is broken through, efficient coupling utilization of mechanical vibration and visible light is achieved, anew way is provided for environmental remediation and renewable energy production, and the preparation method of the nano-composite material is simple and suitable for industrial production.

The invention discloses a photoelectric detector employing a gate modulation graphene / semiconductor Schottky junction and a preparation method. The photoelectric detector comprises a substrate, wherein the substrate is provided with a semiconductor layer, the semiconductor layer is provided with an insulating layer, the insulating layer and a part of the semiconductor layer are provided with a graphene layer, a transparent passivation layer and a piezoelectric gate layer are disposed on the graphene layer, a gate top electrode is arranged on the piezoelectric gate layer, a second metal electrode and the semiconductor layer form Schottky contact, and a first metal electrode and the graphene layer form ohmic contact. The photoelectric detector has the advantages that the structure is simple, the reliability is high, the influence of the manufacturing process on the core structure is small, the light response of the device can be regulated and controlled, and the photoelectric detector with high responsivity and low dark current is prepared.

The invention discloses a preparation method of a weak light type copper indium gallium selenide solar cell applied indoors. The preparation method comprises the following steps: (1) depositing a Mo back electrode on a substrate; (2) depositing a CIGS light absorption layer on the Mo back electrode by a co-evaporation method; (3) depositing a buffer layer on the CIGS light absorption layer; (4) depositing a high-resistance i-ZnO layer or a ZnxMg(1-x) O layer and an ITO layer or an AZO layer on the buffer layer through magnetron sputtering; (5) annealing the copper-indium-gallium-selenium solarcell by using an atmosphere furnace; (6) preparing an upper electrode of the CIGS soft light battery to obtain a weak light type CIGS solar battery; and (7) cutting and packaging the weak light typeCIGS solar cell to finally obtain a finished product. The weak light type copper indium gallium selenide solar cell prepared by the invention has good photoelectric property under lower illuminance, belongs to an environment-friendly product, and is very suitable for being used as an indoor weak light type solar cell.

The invention relates to a three-dimensional / two-dimensional perovskite-based solar cell and a preparation method thereof. The solar cell sequentially comprises a transparent conductive substrate, an electron transport layer, a three-dimensional perovskite active layer, a two-dimensional perovskite active layer, a hole transport layer and a counter electrode from bottom to top, in the two-dimensional perovskite active layer, the structure of the two-dimensional perovskite is lt; 110gt, 110gt; and shaping. According to the preparation method, a high-quality three-dimensional perovskite thin film is prepared by adopting low-pressure auxiliary treatment, and then a nonlinear long-chain organic amine salt solution is used for treatment, so that the thin film with the 1t is generated on the upper surface of the three-dimensional perovskite in situ; 110gt, 110gt; the invention discloses a two-dimensional perovskite layer. The preparation method is efficient, the preparation process is simple, and the obtained three-dimensional / lt is achieved; 110gt, 110gt; the two-dimensional perovskite thin film is better in film-forming property and fewer in defect, the carrier transport performance of the perovskite solar cell prepared on the basis of the two-dimensional perovskite thin film is improved, and the photoelectric conversion efficiency is remarkably improved.

The invention discloses a quaternary ammonium salt functionalized perylene diimide micromolecule interface layer and a preparation method thereof, and the synthesis process is simple and only comprises two steps. Lone pair electrons on secondary amine are subjected to intramolecular charge transfer to perylene diimide cores, so that the perylene diimide has a very strong self-doping effect, a large interface dipole is formed, and the electron mobility is improved; and meanwhile, the quaternary ammonium salt at the tail end also generates dipoles and endows the material with green solvent processing. Due to the formation of the double dipoles, the PDINN-Br has good work function reducing capability, so that good ohmic contact can be formed between an active layer and an electrode, a built-in electric field is enhanced, the open-circuit voltage and short-circuit current density are improved, and finally the device efficiency is improved. In addition, the secondary amine can form hydrogen bonds with F, H and the like in the active layer, so that the interface compatibility is improved, and the interface contact is improved.

The invention discloses an organic solar cell. The organic solar cell comprises a transparent insulating substrate, a transparent anode electrode layer, a photosensitive layer, a cathode electrode layer and an organic protective layer, wherein the transparent anode electrode layer, the photosensitive layer, the cathode electrode layer and the organic protective layer are sequentially stacked on the transparent insulating substrate. A metal nano-particle layer is formed on at least one face of the cathode electrode layer, the work function value of metal nano-particles in the metal nano-particle layer is smaller than the work function value of the cathode electrode layer, the cathode electrode layer is formed by a layer of graphene thin film or double layers of graphene thin films or multiple layers of graphene thin films, the thickness of the cathode electrode layer ranges from 0.5 nm to 10 nm, and the thickness of the photosensitive layer ranges from 100 nm to 1000 nm. According to a manufacturing method of single-layer solar cell devices, the solar cell devices are sequentially formed on all layers, all the layers are tightly and firmly connected, the performance of the solar cell devices is stable, production efficiency is high, production cost is reduced, and the solar cell is suitable for industrial production.

The invention discloses a halogen-doped lead-oxygen compound nanocrystal and a preparation method and application thereof. Specifically, the method of the present invention comprises the following steps: 1) using lead reagent, oleic acid and 1-octadecene to prepare a lead precursor; 2) using trimethylsilyl halogen compounds, bis(trimethylsilyl ) reacting the oxo compound, 1-octadecene and the lead precursor obtained in step 1); 3) obtaining halogen-doped lead oxo compound nanocrystals through post-processing. The present invention uses a precursor containing halogen elements, has good compatibility with the precursor containing oxygen elements, can be almost arbitrarily dissolved in each other, and has a simple and easy preparation method. Compared with the traditional Schottky structure, the open-circuit voltage and short-circuit current of the device are greatly improved, while the fill factor has only a very small attenuation, and the conversion efficiency is increased by nearly 75%.

The invention discloses a solar battery sheet and an assembly thereof, and relates to the technical field of a solar battery. The solar battery sheet comprises a front electrode, a back electrode and a substrate, and further comprises a conductive layer, an emitter electrode, tunneling layers and a backfield doping layer, wherein the upper surface and the lower surface of the substrate are each provided with a tunneling layer; the emitter electrode is disposed on the tunneling layer on the upper surface of the substrate, and the emitter electrode is provided with the conductive layer; the backfield doping layer is disposed below the tunneling layer at the lower surface of the substrate, and the conductive layer is arranged below the backfield doping layer; and the back electrode is arranged below the conductive layer below the backfield doping layer. According to the invention, the battery performance is improved, due to wide band gaps of the tunneling layers and the layer of the emitter electrode, the built-in electric field is enhanced, open-circuit voltages are improved accordingly, at the same time, the utilization rate of incident light is improved, and short-circuit currents are increased.

The invention relates to a silicon heterojunction solar cell and a preparation method thereof. The preparation method comprises the following steps: texturing a n-type silicon wafer, passivating the n-type silicon wafer, preparing a strontium chloride interface-modified film, preparing a Spiro-OMeTAD composite layer, preparing a PEDOT:PSS composite layer, preparing a Bphen interface layer, preparing a front grid electrode and preparing a back electrode. The silicon heterojunction solar cell has excellent photoelectric conversion efficiency.

The invention discloses a double-sided power generation cadmium telluride thin film solar cell and a preparation method thereof. The double-sided power generation cadmium telluride thin film solar cell comprises a glass substrate layer, a transparent conductive film layer, a window layer, an absorbing layer, a back contact layer, a back electrode layer, a packaging material layer and a backboard glass layer in turn. Copper thiocyanate is used as the material of the back contact layer. Tungsten-doped indium oxide is used as the material of the back electrode layer. The p-type material copper thiocyanate is used as the back contact layer and the tungsten-doped indium oxide is used as the back electrode layer so that transparent back electrode of the cadmium telluride cell can be realized, double-sided power generation can be realized and the generation capacity of the cell can be enhanced; meanwhile, the built-in electric field can be enhanced by the strong p-type back contact so that the Voc and the FF of the cadmium telluride solar cell can be enhanced and the performance of the cell can be enhanced.

The invention provides an N type doped silicon film, a preparation method of the N type doped silicon film and a solar cell comprising the N type doped silicon film. The preparation method comprises the following step that: deposition is carried out on a solar cell semi-finished product positioned in a reaction chamber by utilizing a plasma enhanced chemical vapour deposition process, such that the N type doped silicon film is formed; reaction gas in the plasma enhanced chemical vapour deposition process comprises silicon source gas, hydrogen and doped gas, wherein the flow ratio of hydrogen to silicon source gas is 80:1 to 150:1; when the plasma enhanced chemical vapour deposition process is implemented, the surface temperature of the solar cell semi-finished product is 50-70 DEG C; the discharge power density of the plasma enhanced chemical vapour deposition process is 0.8-1.5 W / cm<2>; the reaction pressure is 500-750 Pa; the grain size of the formed N type doped silicon film is less than 5 nm; the bandwidth is greater than 1.9 eV; and the activation energy is less than 0.1 eV. The conversion efficiency of the solar cell can be increased.

The invention discloses a cathode interface modification layer material and a perovskite solar cell. The structural formula of the cathode interface modification layer material is as shown in the specification, wherein Ar is as shown in the specification, n is equal to 1, 2, 3 or 4, and n1 is equal to 1, 2, 3 or 4; and R is H, F, Cl, Br, I, CN, NO3, NH3, CH3 or OCH3. When the cathode interface modification material with the above structure is used for preparing a perovskite solar cell with an inverted structure, the cathode interface modification material has the advantages that the roughnessof an electron transport layer can be reduced, and the collection of carriers by a cathode is facilitated; by introducing the cathode interface modification layer as shown above, a built-in electric field of the device can be improved, so that collection of electrons by the device is facilitated. As the cathode interface modification material has good water-alcohol solubility, the cathode interface modification material can be spin-coated in an electron transport layer through a solution spin-coating method while the electron transport layer is not damaged, the operation is simple, and the cathode interface modification material is compatible with a roll-to-roll process.

The invention relates to a heterojunction solar cell and a manufacturing method thereof and belongs to the technical field of solar cell apparatuses. The heterojunction solar cell is characterized in that: a first-type noncrystal silicon carbide layer is arranged between a transparent conductive film and a first-type noncrystal silicon and the thickness of the layer is 10 to 50nm; and a transparent conductive film is arranged between a quasi-monocrystal silicon layer and a metal film and the thickness of the layer is 100 to 300nm. The manufacturing method comprises the following steps of: manufacturing a double-layer porous silicon by using a p-type (or n-type) monocrystal silicon wafer, growing a p-type (or n-type) crystal silicon layer and an intrinsic crystal silicon layer successively after H2 annealing, performing H2 treatment on the surfaces of samples sequentially to manufacture the intrinsic crystal silicon layer, an n-type (or p-type) noncrystal silicon layer and an n-type (or p-type) noncrystal silicon carbide layer, and performing layer transfer after the manufacturing of an apparatus is finished. A silicon wafer can be reused on the premise of obtaining a high-quality silicon film; the conductivity and the transmissivity of a window layer are higher; and excellent electrode contact can be realized at a low temperature.

The invention relates to a solar thin-film cell comprising a first substrate, a second substrate, an intrinsic semiconductor layer, an N-type doped semiconductor layer and a P-type doped polycrystalline diamond layer. The second substrate and the first substrate are oppositely arranged, the intrinsic semiconductor layer is arranged between the first substrate and the second substrate, the N-type doped semiconductor layer is arranged between the intrinsic semiconductor layer and the second substrate, and the P-type doped polycrystalline diamond layer is arranged between the first substrate and the intrinsic semiconductor layer. In the invention, the solar thin-film cell is internally provided with the P-type doped polycrystalline diamond layer and a built-in electric field is enhanced by utilizing the high energy gap characteristic of the P-type doped polycrystalline diamond layer so as to improve the output power of the solar thin-film cell.