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Silicon heterojunction solar cell and preparation method thereof

A solar cell and silicon heterojunction technology, applied in the field of solar cells, can solve the problems of difficult large-scale application, high cost, and low photoelectric conversion efficiency, and achieve the goals of easy industrial production, improved contact barrier, and improved photoelectric conversion efficiency Effect

Active Publication Date: 2018-09-21
YANGZHOU BAODE LIGHTING EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The temperature in the preparation process of traditional silicon solar cells is high, and the purity of silicon materials is high, which in turn leads to high costs, making traditional silicon solar cells difficult to apply on a large scale
Organic-inorganic hybrid solar cells have attracted widespread attention due to their simple preparation process and low temperature during the preparation process. However, the existing organic-inorganic hybrid solar cells have low photoelectric conversion efficiency.

Method used

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  • Silicon heterojunction solar cell and preparation method thereof

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preparation example Construction

[0024] A method for preparing a silicon heterojunction solar cell proposed in a specific embodiment of the present invention comprises the following steps:

[0025] (1) Carry out texturing treatment to n-type silicon chip, then soak in acidic solution to remove the natural silicon oxide layer on the surface of n-type silicon chip;

[0026] (2) Passivate the n-type silicon chip: spin-coat a mixed solution containing yttrium n-propoxide and hafnium n-propoxide on the upper surface of the n-type silicon chip, and dry it, then apply the n-type silicon chip on the n-type silicon chip The lower surface of the n-type silicon wafer is spin-coated with the above-mentioned mixed solution containing yttrium n-propoxide and hafnium n-propoxide, and then annealed for the first time to form a passivation film on the upper and lower surfaces of the n-type silicon wafer;

[0027] (3) Preparation of strontium chloride interface modification film: the upper surface of the n-type silicon wafer o...

Embodiment 1

[0036] A method for preparing a silicon heterojunction solar cell, comprising the following steps: (1) carrying out texturing treatment to an n-type silicon wafer, and then soaking in an acidic solution to remove the natural silicon oxide layer on the surface of the n-type silicon wafer; (2) ) Passivating the n-type silicon chip: spin-coating a mixed solution containing yttrium n-propoxide and hafnium n-propoxide on the upper surface of the n-type silicon chip, and drying it, then coating the n-type silicon chip The lower surface of the chip is spin-coated with the above-mentioned mixed solution containing yttrium n-propoxide and hafnium n-propoxide, and then annealed for the first time to form a passivation film on the upper and lower surfaces of the n-type silicon chip; (3) strontium chloride Preparation of interface modification film: spin-coat an aqueous solution containing strontium chloride on the upper surface of the n-type silicon wafer obtained in step (2), wherein the...

Embodiment 2

[0040] A method for preparing a silicon heterojunction solar cell, comprising the following steps: (1) carrying out texturing treatment to an n-type silicon wafer, and then soaking in an acidic solution to remove the natural silicon oxide layer on the surface of the n-type silicon wafer; (2) ) Passivating the n-type silicon chip: spin-coating a mixed solution containing yttrium n-propoxide and hafnium n-propoxide on the upper surface of the n-type silicon chip, and drying it, then coating the n-type silicon chip The lower surface of the chip is spin-coated with the above-mentioned mixed solution containing yttrium n-propoxide and hafnium n-propoxide, and then annealed for the first time to form a passivation film on the upper and lower surfaces of the n-type silicon chip; (3) strontium chloride Preparation of interface modification film: spin-coat an aqueous solution containing strontium chloride on the upper surface of the n-type silicon wafer obtained in step (2), wherein the...

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Abstract

The invention relates to a silicon heterojunction solar cell and a preparation method thereof. The preparation method comprises the following steps: texturing a n-type silicon wafer, passivating the n-type silicon wafer, preparing a strontium chloride interface-modified film, preparing a Spiro-OMeTAD composite layer, preparing a PEDOT:PSS composite layer, preparing a Bphen interface layer, preparing a front grid electrode and preparing a back electrode. The silicon heterojunction solar cell has excellent photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a silicon heterojunction solar cell and a preparation method thereof. Background technique [0002] Silicon solar cells mainly include monocrystalline silicon solar cells, polycrystalline silicon solar cells, silicon-based thin-film solar cells and organic-inorganic hybrid solar cells. The temperature in the preparation process of traditional silicon solar cells is high, and the purity of silicon materials is high, which in turn leads to high costs, making it difficult for traditional silicon solar cells to be applied on a large scale. Organic-inorganic hybrid solar cells have attracted widespread attention due to their simple preparation process and low temperature during the preparation process. However, the photoelectric conversion efficiency of existing organic-inorganic hybrid solar cells is low. How to improve the structure of organic-inorganic hybrid solar cells to in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K71/12H10K30/10H10K30/88H10K2102/00Y02E10/549
Inventor 张军
Owner YANGZHOU BAODE LIGHTING EQUIP
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