P-type amorphous silicon carbon-nanoparticle silicon multi-quantum well window layer material

Abstract

The invention discloses a p-type amorphous silicon carbon-nanoparticle silicon multi-quantum well window layer material. The p-type amorphous silicon carbon-nanoparticle silicon multi-quantum well window layer material is a multilayer material which is prepared by using a cascading deposition method and formed by alternately growing broadband gap amorphous silicon carbon thin films and narrowband gap p-type nanoparticle silicon thin films, wherein the thickness of each amorphous silicon carbon thin film is between 2 nm and 8 nm; the thickness of each p-type nanoparticle silicon thin film is between 2 nm and 8 nm; by repeated deposition, a p-type amorphous silicon carbon-nanoparticle silicon multi-quantum well material of which the total thickness is between 20 nm and 50 nm is formed; and the p-type amorphous silicon carbon-nanoparticle silicon multi-quantum well window layer material is applicable to a silicon-based thin film solar cell. The p-type amorphous silicon carbon-nanoparticle silicon multi-quantum well window layer material has the advantages that an optical band gap can reach 2.0 to 3.7 eV, and electric conductivity can reach 0.1 to 5.0 S/cm; and the material is applicable to the silicon-based thin film solar cell, so the open-circuit voltage of the cell can be remarkably improved, the optical absorption loss of a window layer is reduced, the short wave response and short-circuit current density of the cell are improved, and photoelectric conversion efficiency is improved.

Description

【Technical field】 [0001] The invention belongs to the field of silicon-based thin-film solar cells, in particular to a p-type amorphous silicon carbon-nano particle silicon multi-quantum well window layer material. 【technical background】 [0002] Silicon-based thin-film solar cells are the most researched and most mature technology because of the abundant, non-toxic and non-polluting semiconductor material silicon used. Among them, silicon-based thin-film solar cells have become an important direction for the development of solar cells in the future due to their short industrial chain, low manufacturing cost, low energy consumption, and pollution-free manufacturing process. [0003] The p-type doped layer acts as a window layer of the silicon-based thin film battery, and together with the n-type doped layer forms a built-in electric field of the silicon-based thin film battery. The requirements for the p-type window layer are high conductivity, low activation energy and wid...

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Problems solved by technology

However, as the carbon content and band gap in the amorphous silicon carbon film increase, the doping efficiency will decrease and the electrical conductivity will decrease; on the other hand, the electrical conductivity of the p-type amorphous silicon carbon material can be improved by increasing the gas phase doping concentration. At this time, the structural order of the material is severely reduced, resulting in a decrease in the band gap.

In short, the band gap, carbon content, conductivity, doping concentration and other factors of traditional p-type amorphous silicon carbon materials restrict each other, making it difficult to obtain wide band gap and high conductivity properties at the same time, which ultimately affects the improvement of the overall performance of solar cells.

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