The invention discloses a low-pressure oxidization process for a crystalline silicon small-textured structure. The low-pressure oxidization process is carried out on a crystalline silicon wafer with the textured dimension of 0.1-2[mu]m to generate a layer of uniform SiO<2> layer on the surface of the crystalline silicon small-textured structure, so that the surface recombination rate is lowered, the minority carrier lifetime is prolonged, the problem of surface passivation of the crystalline silicon small-textured structure is solved, the surface doping concentration of an emitter can be lowered, the problem of overhigh surface doping concentration of the small-textured structure can be solved, the influence from "dead layer" can be weakened obviously, and the short-wave response of the battery can be improved; meanwhile, the oxidization process is performed in a low-pressure state, so that gas stability and uniformity and environment cleanliness in a diffusion furnace tube can be improved, the sheet resistance uniformity after oxidization is greatly improved and the battery efficiency is improved; and meanwhile, the problem of abnormal appearance of the silicon wafer surface in normal-pressure oxidization can be solved, the number of the abnormal white spots and the like on the silicon wafer surface can be obviously reduced, and the battery product quality is improved effectively.