CsPbBr3 quantum dot-silicon based composite structure solar cell

A technology of solar cells and composite structures, applied in the field of solar cells, can solve the problems of complex preparation process, price and cost, environmental problems, etc., and achieve the effects of high light absorption rate, controllable film formation parameters, and enhanced short-wave response

CN109950330AInactive Publication Date: 2019-06-28YANGZHOU UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2019-06-28
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a CsPbBr3 quantum dot-silicon based composite structure solar cell in the field of solar cells. The solar cell comprises a silicon-based solar cell and a CsPbBr3 quantum dot film coated on the surface of the silicon cell, and the thickness of the CsPbBr3 quantum dot film is 20-25nm. According to the CsPbBr3 quantum dot-silicon based composite structure solar cell, the CsPbBr3 quantum dot film is prepared in the surface of the silicon based solar cell in a spin coating method to form the CsPbBr3 quantum dot-silicon based composite structure solar cell, a fluorescence downward transfer layer is formed in the surface of the silicon based solar cell, compared with a traditional II-VI family compound quantum dot downward transfer material, the CsPbBr3 quantum dots havethe advantages of large absorption cross section and high absorptivity, the short wave response and photovoltaic characteristic of the cell can be enhanced by spin-coating a single film, adverse influence of increasing the serial connection resistance due to the fact that the downward transfer layer is too thick can be avoided, a film forming parameter is controllable, the surface reflectivity ofthe composite structure cell is reduced, short wave response is improved, long wave response is increased, the short-circuit current is increased, and the photovoltaic conversion efficiency of the cell is improved.
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Description

technical field

[0001] The invention relates to the field of solar cells, in particular to a CsPbBr that improves the photoelectric conversion efficiency of the cell 3 Quantum dot-silicon composite structure solar cells. Background technique

[0002] In the prior art, the key issue in the research of silicon-based solar cells is how to realize high-efficiency photoelectric conversion without greatly increasing the production cost. Among them, the introduction of new materials and traditional silicon-based photovoltaic devices to form a nanocomposite structure is considered to be an effective way to broaden the spectral response wavelength range of the battery, thereby obtaining a new generation of silicon-based solar cells with high efficiency and low cost. One of the research frontiers and hot issues. Due to the thermal relaxation loss of traditional silicon-based solar cells, the effective response spectrum is only in the range of 500-1000nm, and the near-ultraviolet pho...

Examples

Embodiment 1

[0028] Such as figure 1 Shown is CsPbBr of the present invention 3 Synthesis process of quantum dot-silicon-based composite structure solar cell In this process, in this example, first prepare CsPbBr applied on the surface of the silicon substrate of the solar cell 3 Colloidal quantum dots: the specific process is: under vacuum conditions, the Cs 2 CO 3 (99.9%) solid 0.8g, oleic acid (90%) 2.5mL and octadecene (90%) 30mL were placed in a three-necked flask, heated to 120°C and dried for 1 hour; °C heating to Cs 2 CO 3 After complete reaction, cool naturally to room temperature under the protection of nitrogen to complete the preparation of cesium oleate precursor solution; take 0.9mL precursor solution and preheat it to 100°C to dissolve it completely; then add octadecene (90%) 10mL and PbBr 2 (99.999%) solid 0.138g was placed in another three-necked flask, and dried at 120°C under vacuum for 1 hour; Oleic acid (90%) each 1mL, to be PbBr 2 After complete dissolution, qu...