106 results about "Colloidal quantum dots" patented technology

The invention provides a light spot detection visualization device and method, and aims to solve the problems of insufficient precision and insufficient interactivity of a traditional fluorescent color developing card in light spot detection. The device is composed of a detection array, a display module and a central controller, the detection array adopts the design of combining a PCB circuit substrate and a colloid quantum dot coating layer, and efficient photoelectric conversion and signal processing are achieved; the central controller analyzes the collected digital signals through an advanced algorithm, so that parameters such as the position and the size of the light spot are accurately calculated, and results are output to the display module to achieve visualization. According to the method, through electrode array partitioning and signal processing flow optimization, the detection efficiency is remarkably improved, and the cost is reduced. The core innovation point of the invention is that a unique hardware structure is combined with an intelligent algorithm, a low-cost and efficient solution is provided for a light spot detection technology, and the technical progress in the field is promoted.

The present invention relates to a ligand exchange technique for III-V group colloidal quantum dots. By employing a ligand surface treatment method, the invention facilitates the ligand exchange process in III-V group quantum dots while enhancing their solvent dispersibility. Furthermore, by substituting heterogeneous ligands, the invention enables the production of quantum dot ink based on environmentally friendly solvents and its application in device fabrication. Accordingly, the present invention proposes III-V group colloidal quantum dots incorporating heterogeneous ligands, a method for manufacturing environmentally friendly solvent-based quantum dot ink, and an optoelectronic device utilizing the ink.

The invention provides a micro-fluidic chip and a manufacturing method thereof, the micro-fluidic chip comprises an injection channel, a mixing channel and a reaction channel, the mixing channel is communicated with the injection channel, and the reaction channel is communicated with the mixing channel; the reaction channel comprises at least two reaction sub-channels, and the lengths of the at least two reaction sub-channels in the reaction channel are unequal in the extension direction of the reaction channel. Quantum dot raw materials are injected from the injection channel of the micro-fluidic chip, and the quantum dot raw materials flow into the reaction channel after being uniformly mixed in the mixing channel; the longer the synthesis time of the colloidal quantum dots in the container is, the larger the size of the quantum dots is, and the lengths of at least two reaction sub-channels in the embodiment are not equal, so that the reaction time of the colloidal quantum dots is different, and the quantum dots with different sizes can be synthesized, namely, the quantum dots with different sizes can be synthesized through one test; the high-flux synthesis of the micro-fluidic chip is realized.

The invention relates to the technical field of tumor cell ectovesicle metabolism detection, and discloses a near-infrared colloidal quantum dot mark optimization system for ectovesicle metabolism detection. Comprising an electric pulse processing module used for generating millisecond electric pulses acting on cancer cells so as to unblock cell membrane outer vesicles corresponding to the cancer cells and increase cell membrane phosphoric acid structure permeability; the control module is used for marking near-infrared colloidal quantum dots corresponding to the cancer cells, the near-infrared colloidal quantum dots have available fluorescence spectrums in an infrared range, and the near-infrared colloidal quantum dots can cross a cell barrier processed by the millisecond-level electric pulse and can be used for detecting the cancer cells. Combining with macromolecular organic matters and metabolic substrates in extracellular vesicles; on the basis of the combined near-infrared colloidal quantum dots, macromolecular organic matters and metabolic substrates in the extracellular vesicles are detected, and efficient marking of the macromolecular organic matters and metabolic substrates in the extracellular vesicles of cancer cells is achieved.

The invention relates to an infrared detector based on 2.0 micron PbS colloidal quantum dots and a preparation method thereof, the infrared detector is composed of an anode conducting layer, a hole transport layer, a colloidal quantum dot film, an electron transport layer, an electron blocking layer and a cathode conducting layer, the colloidal quantum dot film adopts PbS-PbX, the preparation method adopts 9.7 nm PbS colloidal quantum dots to carry out liquid phase exchange, and the hole transport layer and the electron blocking layer are combined to form the infrared detector based on 2.0 micron PbS colloidal quantum dots. The PbS-PbX ink containing the halogen short-chain ligand is spin-coated on the hole transport layer. And the prepared infrared detector has a good rectification characteristic and relatively high infrared sensitivity at a 2350 nm infrared light source.

The application belongs to the field of electrochemical biosensors, and more particularly relates to a protein molecule labeling method for constructing a high-performance electrochemical sensor. In the application, organic ligands on the surface of sulfide colloidal quantum dots are replaced with water-soluble ligands through liquid-phase ligand replacement, and then mixed with a carboxyl activator to activate the carboxyl groups of the water-soluble ligands, followed by uniform mixing with protein molecules, so that the protein molecules are effectively labeled on the quantum dots. The quantum dots prepared in the application, which have water-soluble ligands on the surface and are labeled with protein molecules, are coated on the working electrode of a planar three-electrode system through a one-step method, and after drying, an electrochemical biosensor with a wide detection range, high response sensitivity and strong anti-interference performance is prepared.

The invention relates to colloidal quantum dots on a silicon photomultiplier microcell matrix. The techniques employ colloidal quantum dots (CQDs) in which a CQD layer is disposed on an array of SiPM microcells of an image sensor for an imaging module. The CQD layer and the microcell array are individually biased. A method includes biasing a CQD layer of an imaging module at a first voltage, and biasing an array of photomultiplier microcells at a second voltage. Upon receiving photons, the CQD layer generates charge in response. Charge moves from the CQD layer into the array, where at least one photomultiplier microcell amplifies the charge. A signal is then output from the imaging module in accordance with the amplified charge. This method can significantly improve the photon detection efficiency of the imaging element, which can be used in a wide range of applications such as lidar, medical imaging and night vision or in other weak light imaging scenarios.

This application discloses a method for preparing a trimethylaluminum-doped lead selenide colloidal quantum dot film. The method comprises: obtaining a fifth mixed solution; spin-coating the fifth mixed solution onto a target sample and annealing the solution for a preset annealing time to obtain an initial lead selenide colloidal quantum dot film; placing the initial lead selenide colloidal quantum dot film in a chamber, evacuating the chamber until the pressure reaches a preset pressure, heating the initial lead selenide colloidal quantum dot film to a preset temperature; and introducing trimethylaluminum gas into the chamber to obtain the trimethylaluminum-doped lead selenide colloidal quantum dot film. This application can improve the mobility of colloidal quantum dot detectors.

One embodiment of the present invention provides a photodetector comprising a light-absorbing layer that is formed between an upper electrode and a lower electrode and contains a fluorine-based organic polymer and colloidal quantum dots. According to the embodiment, using the newly proposed light-absorbing layer enables reducing surface defects of the quantum dots in the photodetector while simultaneously improving operational stability.

The embodiment of the present application provides a short-wave infrared focal plane sensor, a manufacturing method thereof and a short-wave infrared detector. The short-wave infrared focal plane sensor comprises a TFT backplane and a colloidal quantum dot photoelectric conversion layer arranged on the TFT backplane. The orthographic projection of the colloidal quantum dot photoelectric conversion layer on the TFT backplane covers the sensing area of the TFT backplane and is used for sensing short-wave infrared light. The TFT backplane comprises a substrate base plate and a thin film transistor layer arranged on the sensing area of the substrate base plate. The thin film transistor layer is arranged between the substrate base plate and the colloidal quantum dot photoelectric conversion layer and comprises a plurality of thin film transistors. Each thin film transistor corresponds to a pixel. The side of the colloidal quantum dot photoelectric conversion layer facing the TFT backplane is provided with a plurality of bias electrodes, and the side of the colloidal quantum dot photoelectric conversion layer facing away from the TFT backplane is provided with a common electrode. Each bias electrode corresponds to a thin film transistor. The common electrode covers the colloidal quantum dot photoelectric conversion layer, and the common electrode and the bias electrode are made of the same material.

A photodetector device includes a group of pixels. A common reference electrode is shared between the pixels of the group of pixels. A continuous and common colloidal quantum dot thin film is shared by the pixels, including a photosensitive region capable of photogenerating electric charges. An electrode for collecting photogenerated charges is provided for each pixel. The electrodes collecting the charges are configured to collect electrically positive photogenerated charges.

The present invention provides a method of preparing a nanocrystal composition comprising an inorganic ligand by one-pot synthesis. The invention also provides nanocrystals comprising the novel inorganic ligands and uses thereof. The invention also provides application of the novel inorganic ligand in preparation of nanocrystals.

A colloidal quantum dot (CQD) based image sensor. The CQD based image sensor includes a top contact layer, a light absorption layer, a readout integrated circuit (ROIC), and a pixel electrode. The quantum dot film includes colloidal quantum dots. The pixel electrode is positioned between the quantum dot film and the ROIC.

The present invention relates to a colloidal quantum dot photoconductive infrared detector based on a capture mode, its preparation method, and application, and belongs to the technical field of photoelectric detectors. The detector comprises a first colloidal quantum dot layer and an adjacent second colloidal quantum dot layer, as well as a substrate and an electrode, wherein the first colloidal quantum dot layer is arranged closer to the electrode than the second colloidal quantum dot layer; the first colloidal quantum dot layer has a greater carrier mobility than the second colloidal quantum dot layer; the second colloidal quantum dot layer is a p-type semiconductor material layer, in which holes in the p-type semiconductor material layer capture electrons in the first colloidal quantum dot layer and are used to reduce electron-hole recombination noise. The detector designed by the present invention has both excellent photoresponsivity and good specific detectivity.

This invention discloses a colloidal quantum dot dual-mode detector and its fabrication method. The colloidal quantum dot dual-mode detector comprises, from bottom to top, a substrate, a bottom electrode, a photodiode layer, an electric field modulation layer, a gain device layer, and a top electrode, stacked sequentially. Through an innovative vertically stacked bandgap design, this invention integrates a colloidal quantum dot photodiode and a multi-junction gain structure within a single device for the first time. The device intelligently modulates the direction of the internal electric field using an external bias voltage, achieving precise and rapid switching between high-gain weak-light detection and high-linearity strong-light detection modes. It also fundamentally suppresses dark current, solving the problems of excessive noise and poor stability in traditional gain devices. Furthermore, the device maintains high response speed and excellent stability while possessing a compact structure and high compatibility with existing planar processes, demonstrating excellent process compatibility and large-scale fabrication potential, providing a stable and reliable technical foundation for the development of high-resolution infrared imaging devices.

The invention discloses an electric pumping colloidal quantum dot laser of a silicon-based substrate, and belongs to the technical field of semiconductor optoelectronic devices. The laser is provided with a doped silicon substrate, a lower buffer layer, a lower carrier transport layer, a colloidal quantum dot gain layer, an upper carrier transport layer, an upper protection layer, a waveguide structure layer, an upper buffer layer and an electrode system which are stacked from bottom to top. A conductive optical limiting structure is constructed on the surface of the doped silicon substrate and has conductivity in the vertical direction, and the effective refractive index of the conductive optical limiting structure under the lasing wavelength is remarkably lower than that of the colloid quantum dot gain layer. In addition, a DFB grating structure is arranged in the transparent waveguide structure layer, and a planarization buried layer design is adopted to adapt to a solution method preparation process. The problems of silicon-based interface light leakage, parasitic waveguide effect and process compatibility are solved, and low-cost, low-threshold and high-stability laser output can be realized on the silicon substrate without wafer bonding.

This invention discloses a near-infrared narrowband absorption enhancement structure based on a resonant cavity, comprising a substrate on which, from bottom to top, a lower thin-film reflective structure, an electron transport layer, an absorption layer, a hole transport layer, and an upper thin-film reflective structure are sequentially disposed. This design resolves the contradiction between shortened charge transport paths and insufficient light absorption distance. While thinning the absorption layer and improving carrier collection efficiency, it completely avoids plasmon losses and increased dark current introduced by metal electrodes, effectively improving the device's signal-to-noise ratio and weak light detection capability. This invention also discloses a method for fabricating the aforementioned absorption enhancement structure. By fabricating an upper and lower thin-film reflective structure with alternating stacks of TiO2 and SiO2 to replace traditional metal electrodes, this structure, together with a PbS colloidal quantum dot absorption layer, forms an all-dielectric optical resonant cavity. This structure exhibits no metal loss, enhanced absorption, controllable spectrum, balances high absorption and charge transport in a thin layer, and improves device efficiency and stability.

The invention provides a low-threshold continuous wave pumping vertical cavity surface emitting single-mode laser and a preparation method thereof. The low-threshold continuous wave pumping vertical cavity surface emitting single-mode laser based on the colloidal quantum dots comprises an optical substrate; the bottom distributed Bragg reflector is arranged on the optical substrate; the colloidal quantum dot active gain layer is arranged on the bottom distributed Bragg reflector; and the top distributed Bragg reflector is arranged on the colloidal quantum dot active gain layer. The low-threshold continuous wave pumping vertical cavity surface emitting single-mode laser and the preparation method thereof have the advantages that the operation is simple, convenient and efficient, low-threshold and high-stability continuous laser output is realized, and the blank of a continuous laser based on colloidal quantum dots in the prior art is effectively filled up.

The invention belongs to the technical field of semiconductor technologies, and discloses a blood glucose detection device based on a non-toxic colloidal quantum dot photodiode, which comprises a near-infrared light source module, a photoelectric conversion module, a signal processing module and a blood glucose calculation module, the photoelectric conversion module is a non-toxic colloidal quantum dot photodiode; the non-toxic colloid quantum dot photodiode comprises a bottom reflection electrode, a DBR layer, an N-type layer, an absorption layer, a P-type layer and a top transparent electrode which are sequentially stacked. The N-type layer is a TiO2 or ZnO nano particle layer; the absorption layer is an intrinsic AgBiS2 and ZnTe mixed colloid quantum dot layer; the P-type layer is a CuInS2 colloidal quantum dot layer; the top transparent electrode is made of ITO or AZO. The long-term safety of the device can be remarkably improved, and the device is more suitable for non-invasive wearable blood glucose monitoring application which is in contact with or is attached to the skin of the human body.

A photodetector comprising a sensor which is configured to sense infrared radiation. The sensor comprises an infrared-absorbing structure on a CMOS die and an encapsulation structure which is arranged to form an enclosure on the CMOS die so that the infrared-5 absorbing structure is located inside the enclosure. The infrared-absorbing structure comprises colloidal quantum dots. The encapsulation structure comprises a silicon die.

The invention discloses a cascaded colloidal quantum dot light guide type focal plane detector and a preparation method thereof. The cascade type colloid quantum dot light guide type focal plane detector comprises a substrate layer, array type interdigital electrodes are arranged on the substrate layer, and a first insulating layer is arranged at the position, except for the interdigital electrodes, of the substrate; an active layer formed by cascading HgTe quantum dot layers is arranged on the interdigital electrode; a second insulating layer is arranged on the first insulating layer and the active layer, and an antireflection film layer is arranged on the second insulating layer. The structure of the cascaded colloidal quantum dot light guide type focal plane detector can effectively isolate adjacent pixels, reduce signal crosstalk and improve image contrast. According to the cascade type colloid quantum dot light guide type focal plane detector, the active layer formed by the cascade type HgTe quantum dot layer is adopted, in combination with the overall structure, the energy band gradient can be formed, separation and transmission of photon-generated carriers are promoted, the recombination loss is reduced, and the quantum efficiency is improved.

The application provides a multi-component quantum dot heterostructure and a preparation method and application thereof. The preparation method comprises the following steps: dispersing at least two components of colloidal quantum dots in an alkane solvent to obtain a precursor solution; placing the precursor solution on the surface of a silicon-based micro-column template, then covering a base on the top of the silicon-based micro-column template, applying pressure, so that the precursor solution forms a capillary liquid bridge between the top of the silicon-based micro-column template and the base; and performing one-way evaporation treatment on the capillary liquid bridge structure to form a multi-component quantum dot heterostructure with size-oriented phase separation; the particle size of colloidal quantum dots of any component is different from the particle size of colloidal quantum dots of other components. The application provides a one-step method for preparing a multi-component quantum dot heterostructure, realizes the size-oriented phase separation and ordered assembly of the multi-component quantum dots, and has the advantages of simple process, large-scale microprocessing, good photoelectric performance and integration, and good application prospect in optoelectronic devices.

The application discloses a long-time high-temperature-resistant lead sulfide colloidal quantum dot film and a preparation method thereof, and comprises the following steps: obtaining first PbS quantum dot solids, wherein the surface ligand of the first PbS quantum dot solids is a first ligand; dissolving the first PbS quantum dot solids in a first non-polar solvent to form a first PbS quantum dot solution; adding a mercaptan ligand into the first PbS quantum dot solution; obtaining second PbS quantum dot solids, wherein the surface of the quantum dots is the mercaptan ligand; dissolving the quantum dots with the mercaptan ligand on the surface in a second non-polar solvent to obtain a second PbS quantum dot solution; and spin-coating the second PbS quantum dot solution on a substrate to prepare a PbS colloidal quantum dot film; and the mercaptan ligand is one or a combination of mercaptoethanol (ME) or butanethiol. According to the application, mercaptoethanol (ME) or butanethiol is used as the PbS quantum dot solid ligand, the high-temperature-resistant mercaptan ligand is used to replace the high-temperature-unstable metal halide ligand, and the long-time high-temperature stability of the PbS quantum dot film is greatly improved.

The application relates to a synthesis method of selenium-doped mercury telluride colloidal quantum dots and application thereof, and the synthesis method comprises the following steps: adding mercury halide into oleylamine to obtain an oleylamine complex solution of the mercury halide; rapidly injecting a mixed precursor solution of tri-n-octyl tellurium phosphine and oleylamine selenium urea into the solution, so that the mixed precursor reacts with the mercury halide to generate selenium-doped mercury telluride colloidal quantum dots. The synthesis method synthesizes the selenium-doped mercury telluride colloidal quantum dots through a simple one-step method, greatly simplifies a synthesis threshold of the mercury telluride colloidal quantum dots, and makes the mercury telluride colloidal quantum dots more controllable, faster and cheaper.

The invention discloses a pure bromine-based multiband composite sky-blue light colloidal quantum dot material and a synthesis method thereof, and belongs to the field of metal halide luminescent materials. According to the method, a composite ligand containing oleylamine and 3-aminopropyltriethoxysilane is adopted to carry out cooperative regulation and control on the reaction of a lead source, a zinc source and a cesium source. Specifically, the quantum dot material is prepared in a single reaction system through a thermal injection method. The material can generate at least three independent emission peaks within the range of 435-445 nm, 460-468 nm and 475-485 nm under exciting light of 365 nm, the three independent emission peaks are compounded to form sky blue light, and the photoluminescence quantum yield of the material can exceed 60%. Due to the existence of the silane-containing organic amine ligand, the material has excellent water stability, for example, the material can still keep higher photoluminescence quantum yield after 30 minutes in an environment with 100% relative humidity. According to the invention, the problems of single luminescence peak and poor stability of the existing blue-light perovskite material are solved.

The application belongs to the technical field of neuromorphic computing devices, and particularly relates to a temperature programmable neuromorphic device based on lead sulfide colloidal quantum dots and application. The device comprises an insulating substrate, a planar gap electrode, a lead sulfide colloidal quantum dot photosensitive film and a temperature control module. By setting the working temperature to control the release kinetics of the trap state charge in the photosensitive film, the device has different photocurrent decay characteristics at different temperatures, realizing reversible switching of the fast detection and long-term storage modes. The device can be used for reservoir computing, and realizes time sequence information processing through the historical dependence response to time sequence light pulses. The application solves the problem of fixed and unadjustable response time scale of the existing device, and has the advantages of simple structure, good process compatibility and wide response dynamic range.

A colloidal quantum dot (CQD) based image sensor. The CQD based image sensor includes a top contact layer, a light absorption layer, a readout integrated circuit (ROIC), and a pixel electrode. The quantum dot film includes colloidal quantum dots. The pixel electrode is positioned between the quantum dot film and the ROIC.

The present invention relate to a plurality of molecular clusters of which a substantial proportion are singly-doped, methods of producing such pluralities of molecular dusters, pluralities of colloidal quantum dots of which a substantial proportion are singly-doped, methods of producing such pluralities of colloidal quantum dots, and quantum devices comprising such pluralities of colloidal quantum dots.

The application relates to a preparation method of long-wave and very long-wave infrared quantum dots and application of the quantum dots in photoconductive detectors. The application belongs to the field of infrared colloidal quantum dots. The application aims to solve the technical problems of poor stability of existing large-size quantum dot colloids, low response wavelength and low specific detectivity. The application prepares quantum dots with photoelectric response to long-wave and very long-wave by adjusting the Hg:Te ratio of HgTe quantum dots, simultaneously adopting a method of fast nucleation of a trisubstituted tellurium-containing precursor and continuous growth of a disubstituted tellurium-containing precursor. In addition, precise doping control is realized through surface modification, so that a long enough carrier drift length is obtained, the quantum dot mobility is increased by 100 times, and high responsivity and specific detectivity of the device are facilitated.