79 results about "Colloidal quantum dots" patented technology

The present invention relates to a ligand exchange technique for III-V group colloidal quantum dots. By employing a ligand surface treatment method, the invention facilitates the ligand exchange process in III-V group quantum dots while enhancing their solvent dispersibility. Furthermore, by substituting heterogeneous ligands, the invention enables the production of quantum dot ink based on environmentally friendly solvents and its application in device fabrication. Accordingly, the present invention proposes III-V group colloidal quantum dots incorporating heterogeneous ligands, a method for manufacturing environmentally friendly solvent-based quantum dot ink, and an optoelectronic device utilizing the ink.

The application belongs to the field of electrochemical biosensors, and more particularly relates to a protein molecule labeling method for constructing a high-performance electrochemical sensor. In the application, organic ligands on the surface of sulfide colloidal quantum dots are replaced with water-soluble ligands through liquid-phase ligand replacement, and then mixed with a carboxyl activator to activate the carboxyl groups of the water-soluble ligands, followed by uniform mixing with protein molecules, so that the protein molecules are effectively labeled on the quantum dots. The quantum dots prepared in the application, which have water-soluble ligands on the surface and are labeled with protein molecules, are coated on the working electrode of a planar three-electrode system through a one-step method, and after drying, an electrochemical biosensor with a wide detection range, high response sensitivity and strong anti-interference performance is prepared.

The invention relates to colloidal quantum dots on a silicon photomultiplier microcell matrix. The techniques employ colloidal quantum dots (CQDs) in which a CQD layer is disposed on an array of SiPM microcells of an image sensor for an imaging module. The CQD layer and the microcell array are individually biased. A method includes biasing a CQD layer of an imaging module at a first voltage, and biasing an array of photomultiplier microcells at a second voltage. Upon receiving photons, the CQD layer generates charge in response. Charge moves from the CQD layer into the array, where at least one photomultiplier microcell amplifies the charge. A signal is then output from the imaging module in accordance with the amplified charge. This method can significantly improve the photon detection efficiency of the imaging element, which can be used in a wide range of applications such as lidar, medical imaging and night vision or in other weak light imaging scenarios.

One embodiment of the present invention provides a photodetector comprising a light-absorbing layer that is formed between an upper electrode and a lower electrode and contains a fluorine-based organic polymer and colloidal quantum dots. According to the embodiment, using the newly proposed light-absorbing layer enables reducing surface defects of the quantum dots in the photodetector while simultaneously improving operational stability.

A photodetector device includes a group of pixels. A common reference electrode is shared between the pixels of the group of pixels. A continuous and common colloidal quantum dot thin film is shared by the pixels, including a photosensitive region capable of photogenerating electric charges. An electrode for collecting photogenerated charges is provided for each pixel. The electrodes collecting the charges are configured to collect electrically positive photogenerated charges.

The present invention provides a method of preparing a nanocrystal composition comprising an inorganic ligand by one-pot synthesis. The invention also provides nanocrystals comprising the novel inorganic ligands and uses thereof. The invention also provides application of the novel inorganic ligand in preparation of nanocrystals.

A colloidal quantum dot (CQD) based image sensor. The CQD based image sensor includes a top contact layer, a light absorption layer, a readout integrated circuit (ROIC), and a pixel electrode. The quantum dot film includes colloidal quantum dots. The pixel electrode is positioned between the quantum dot film and the ROIC.

This invention discloses a colloidal quantum dot dual-mode detector and its fabrication method. The colloidal quantum dot dual-mode detector comprises, from bottom to top, a substrate, a bottom electrode, a photodiode layer, an electric field modulation layer, a gain device layer, and a top electrode, stacked sequentially. Through an innovative vertically stacked bandgap design, this invention integrates a colloidal quantum dot photodiode and a multi-junction gain structure within a single device for the first time. The device intelligently modulates the direction of the internal electric field using an external bias voltage, achieving precise and rapid switching between high-gain weak-light detection and high-linearity strong-light detection modes. It also fundamentally suppresses dark current, solving the problems of excessive noise and poor stability in traditional gain devices. Furthermore, the device maintains high response speed and excellent stability while possessing a compact structure and high compatibility with existing planar processes, demonstrating excellent process compatibility and large-scale fabrication potential, providing a stable and reliable technical foundation for the development of high-resolution infrared imaging devices.

The invention discloses an electric pumping colloidal quantum dot laser of a silicon-based substrate, and belongs to the technical field of semiconductor optoelectronic devices. The laser is provided with a doped silicon substrate, a lower buffer layer, a lower carrier transport layer, a colloidal quantum dot gain layer, an upper carrier transport layer, an upper protection layer, a waveguide structure layer, an upper buffer layer and an electrode system which are stacked from bottom to top. A conductive optical limiting structure is constructed on the surface of the doped silicon substrate and has conductivity in the vertical direction, and the effective refractive index of the conductive optical limiting structure under the lasing wavelength is remarkably lower than that of the colloid quantum dot gain layer. In addition, a DFB grating structure is arranged in the transparent waveguide structure layer, and a planarization buried layer design is adopted to adapt to a solution method preparation process. The problems of silicon-based interface light leakage, parasitic waveguide effect and process compatibility are solved, and low-cost, low-threshold and high-stability laser output can be realized on the silicon substrate without wafer bonding.

This invention discloses a near-infrared narrowband absorption enhancement structure based on a resonant cavity, comprising a substrate on which, from bottom to top, a lower thin-film reflective structure, an electron transport layer, an absorption layer, a hole transport layer, and an upper thin-film reflective structure are sequentially disposed. This design resolves the contradiction between shortened charge transport paths and insufficient light absorption distance. While thinning the absorption layer and improving carrier collection efficiency, it completely avoids plasmon losses and increased dark current introduced by metal electrodes, effectively improving the device's signal-to-noise ratio and weak light detection capability. This invention also discloses a method for fabricating the aforementioned absorption enhancement structure. By fabricating an upper and lower thin-film reflective structure with alternating stacks of TiO2 and SiO2 to replace traditional metal electrodes, this structure, together with a PbS colloidal quantum dot absorption layer, forms an all-dielectric optical resonant cavity. This structure exhibits no metal loss, enhanced absorption, controllable spectrum, balances high absorption and charge transport in a thin layer, and improves device efficiency and stability.

The invention provides a low-threshold continuous wave pumping vertical cavity surface emitting single-mode laser and a preparation method thereof. The low-threshold continuous wave pumping vertical cavity surface emitting single-mode laser based on the colloidal quantum dots comprises an optical substrate; the bottom distributed Bragg reflector is arranged on the optical substrate; the colloidal quantum dot active gain layer is arranged on the bottom distributed Bragg reflector; and the top distributed Bragg reflector is arranged on the colloidal quantum dot active gain layer. The low-threshold continuous wave pumping vertical cavity surface emitting single-mode laser and the preparation method thereof have the advantages that the operation is simple, convenient and efficient, low-threshold and high-stability continuous laser output is realized, and the blank of a continuous laser based on colloidal quantum dots in the prior art is effectively filled up.

The invention belongs to the technical field of semiconductor technologies, and discloses a blood glucose detection device based on a non-toxic colloidal quantum dot photodiode, which comprises a near-infrared light source module, a photoelectric conversion module, a signal processing module and a blood glucose calculation module, the photoelectric conversion module is a non-toxic colloidal quantum dot photodiode; the non-toxic colloid quantum dot photodiode comprises a bottom reflection electrode, a DBR layer, an N-type layer, an absorption layer, a P-type layer and a top transparent electrode which are sequentially stacked. The N-type layer is a TiO2 or ZnO nano particle layer; the absorption layer is an intrinsic AgBiS2 and ZnTe mixed colloid quantum dot layer; the P-type layer is a CuInS2 colloidal quantum dot layer; the top transparent electrode is made of ITO or AZO. The long-term safety of the device can be remarkably improved, and the device is more suitable for non-invasive wearable blood glucose monitoring application which is in contact with or is attached to the skin of the human body.

A photodetector comprising a sensor which is configured to sense infrared radiation. The sensor comprises an infrared-absorbing structure on a CMOS die and an encapsulation structure which is arranged to form an enclosure on the CMOS die so that the infrared-5 absorbing structure is located inside the enclosure. The infrared-absorbing structure comprises colloidal quantum dots. The encapsulation structure comprises a silicon die.

The application provides a multi-component quantum dot heterostructure and a preparation method and application thereof. The preparation method comprises the following steps: dispersing at least two components of colloidal quantum dots in an alkane solvent to obtain a precursor solution; placing the precursor solution on the surface of a silicon-based micro-column template, then covering a base on the top of the silicon-based micro-column template, applying pressure, so that the precursor solution forms a capillary liquid bridge between the top of the silicon-based micro-column template and the base; and performing one-way evaporation treatment on the capillary liquid bridge structure to form a multi-component quantum dot heterostructure with size-oriented phase separation; the particle size of colloidal quantum dots of any component is different from the particle size of colloidal quantum dots of other components. The application provides a one-step method for preparing a multi-component quantum dot heterostructure, realizes the size-oriented phase separation and ordered assembly of the multi-component quantum dots, and has the advantages of simple process, large-scale microprocessing, good photoelectric performance and integration, and good application prospect in optoelectronic devices.

The application discloses a long-time high-temperature-resistant lead sulfide colloidal quantum dot film and a preparation method thereof, and comprises the following steps: obtaining first PbS quantum dot solids, wherein the surface ligand of the first PbS quantum dot solids is a first ligand; dissolving the first PbS quantum dot solids in a first non-polar solvent to form a first PbS quantum dot solution; adding a mercaptan ligand into the first PbS quantum dot solution; obtaining second PbS quantum dot solids, wherein the surface of the quantum dots is the mercaptan ligand; dissolving the quantum dots with the mercaptan ligand on the surface in a second non-polar solvent to obtain a second PbS quantum dot solution; and spin-coating the second PbS quantum dot solution on a substrate to prepare a PbS colloidal quantum dot film; and the mercaptan ligand is one or a combination of mercaptoethanol (ME) or butanethiol. According to the application, mercaptoethanol (ME) or butanethiol is used as the PbS quantum dot solid ligand, the high-temperature-resistant mercaptan ligand is used to replace the high-temperature-unstable metal halide ligand, and the long-time high-temperature stability of the PbS quantum dot film is greatly improved.

The invention discloses a pure bromine-based multiband composite sky-blue light colloidal quantum dot material and a synthesis method thereof, and belongs to the field of metal halide luminescent materials. According to the method, a composite ligand containing oleylamine and 3-aminopropyltriethoxysilane is adopted to carry out cooperative regulation and control on the reaction of a lead source, a zinc source and a cesium source. Specifically, the quantum dot material is prepared in a single reaction system through a thermal injection method. The material can generate at least three independent emission peaks within the range of 435-445 nm, 460-468 nm and 475-485 nm under exciting light of 365 nm, the three independent emission peaks are compounded to form sky blue light, and the photoluminescence quantum yield of the material can exceed 60%. Due to the existence of the silane-containing organic amine ligand, the material has excellent water stability, for example, the material can still keep higher photoluminescence quantum yield after 30 minutes in an environment with 100% relative humidity. According to the invention, the problems of single luminescence peak and poor stability of the existing blue-light perovskite material are solved.

The application belongs to the technical field of neuromorphic computing devices, and particularly relates to a temperature programmable neuromorphic device based on lead sulfide colloidal quantum dots and application. The device comprises an insulating substrate, a planar gap electrode, a lead sulfide colloidal quantum dot photosensitive film and a temperature control module. By setting the working temperature to control the release kinetics of the trap state charge in the photosensitive film, the device has different photocurrent decay characteristics at different temperatures, realizing reversible switching of the fast detection and long-term storage modes. The device can be used for reservoir computing, and realizes time sequence information processing through the historical dependence response to time sequence light pulses. The application solves the problem of fixed and unadjustable response time scale of the existing device, and has the advantages of simple structure, good process compatibility and wide response dynamic range.

A colloidal quantum dot (CQD) based image sensor. The CQD based image sensor includes a top contact layer, a light absorption layer, a readout integrated circuit (ROIC), and a pixel electrode. The quantum dot film includes colloidal quantum dots. The pixel electrode is positioned between the quantum dot film and the ROIC.

The application relates to a preparation method of long-wave and very long-wave infrared quantum dots and application of the quantum dots in photoconductive detectors. The application belongs to the field of infrared colloidal quantum dots. The application aims to solve the technical problems of poor stability of existing large-size quantum dot colloids, low response wavelength and low specific detectivity. The application prepares quantum dots with photoelectric response to long-wave and very long-wave by adjusting the Hg:Te ratio of HgTe quantum dots, simultaneously adopting a method of fast nucleation of a trisubstituted tellurium-containing precursor and continuous growth of a disubstituted tellurium-containing precursor. In addition, precise doping control is realized through surface modification, so that a long enough carrier drift length is obtained, the quantum dot mobility is increased by 100 times, and high responsivity and specific detectivity of the device are facilitated.

Methods and apparatus for a sensor having a photodetector array having photodetectors comprising a colloidal quantum dot (CQD) structure formed on an integrated circuit. The sensor may comprise a LIDAR time of flight sensor.

The invention discloses a manganese-doped wide-band-gap colloidal quantum dot and TiO2 heterojunction photoelectrode and preparation and application thereof, and belongs to the technical field of semiconductor photoelectric materials and devices. According to the photoelectrode, conductive glass serves as a substrate, a TiO2 barrier layer, a TiO2 transparent layer, a scattering layer, a Mn-doped wide-band-gap colloid quantum dot layer and a surface passivation layer are sequentially constructed, and the barrier layer inhibits charge recombination; the transparent layer and the scattering layer synergistically enhance light absorption; the quantum dot layer can broaden spectral response, remarkably prolong the service life of current carriers and promote effective separation of photo-generated excitons; the passivation layer is used for reducing the light corrosion influence; the preparation method comprises the steps of TiO2 multilayer photoelectrode preparation, quantum dot synthesis and electrophoretic deposition and passivation treatment. The photoelectrode has excellent performance in hydrogen production by photoelectrochemical decomposition of water, and the system does not contain heavy metals; compared with an undoped system, the saturation photocurrent density and the hydrogen production rate are remarkably improved, the electron life is prolonged, and a reliable technical path is provided for large-scale preparation and application in the hydrogen production field.

The invention relates to the technical field of colloidal quantum dot doping, in particular to an iodine-doped preparation method of PbS colloidal quantum dots, which comprises the following steps: preparing PbS CQDs by a thermal injection method, dispersing the PbS CQDs in an n-octane solution for later use after liquid phase exchange, weighing a certain amount of iodine (I) solid, adding a proper amount of ethanol solvent, treating under ultrasonic conditions until the iodine (I) solid is completely dissolved, and drying to obtain the PbS colloidal quantum dots. The iodine-doped PbS (I) CQDs thin film is prepared by the following steps: adding a PbS CQDs solution into a quartz substrate to obtain a uniform iodine solution, dripping the PbS CQDs solution on the quartz substrate, spin-coating to form a PbS CQDs thin film, immersing the obtained thin film into the iodine solution for 30 seconds, taking out the thin film, spin-drying the thin film on a spin coater, cleaning the surface with an ethanol solution, and repeating the operation twice to finally obtain the iodine-doped PbS (I) CQDs thin film. The doping technology is simple and effective, the doping concentration is adjustable, large-scale solution phase doping can be achieved, and the doping technology is expected to be applied to PbS quantum dot material and film doping and plays an important role in PbS quantum dot photoelectric devices and electronic devices.

This disclosure relates to the field of infrared detection technology, and more particularly to a colloidal quantum dot infrared focal plane detector. The colloidal quantum dot infrared focal plane detector includes a colloidal quantum dot infrared detection chip and a window located on one side of the light-incident surface of the colloidal quantum dot infrared detection chip. Specifically, by setting the window as an anisotropic structure window, the anisotropic structure window includes a first surface and a second surface. The first surface is located on the side facing the colloidal quantum dot infrared detection chip, and the second surface is located on the side facing away from the colloidal quantum dot infrared detection chip. At least a portion of the first surface and / or the second surface has an angle greater than 0 with the light-incident surface of the colloidal quantum dot infrared detection chip, thereby breaking the light path of reflected light in conventional window structures. This prevents the reflected light from forming a coherent beam with the incident light, thus improving the interference fringe phenomenon and enhancing the imaging quality of the colloidal quantum dot infrared focal plane detector.

The invention belongs to the technical field of nano material preparation and resource cyclic utilization, and particularly relates to a colloidal quantum dot liquid-phase ligand exchange matrix material recycling method based on purification and recrystallization, which aims at waste liquid generated in a liquid-phase ligand exchange process, recycles an unreacted halide matrix material, and improves the utilization rate of the colloid quantum dot liquid-phase ligand exchange matrix material. The invention develops an efficient, environment-friendly and easy-to-implement halide matrix material recovery technology, so that the cyclic utilization of resources is realized, the production cost is reduced, and the environmental pollution is reduced.

The invention discloses a single photon source device and a preparation method thereof, relates to the technical field of optical signal processing, and discloses the preparation method of the single photon source device, which comprises the following steps: providing a hollow-core optical fiber, a colloidal quantum dot solution and a single-mode optical fiber; guiding the colloidal quantum dot solution into a fiber core of the hollow-core optical fiber; and connecting the hollow-core optical fiber with the single-mode optical fiber to obtain the single photon source device. According to the scheme of the invention, the collection and detection efficiency of quantum dot luminescence of the single-photon source device can be improved.

An electroluminescent (EL) device used, for example, in a flat panel display (FPD) comprises a top electrode, a plurality of bottom electrodes connected to a substrate, and a plurality of layers of EL materials interposed between the top electrode and the bottom electrodes. In some examples, a first EL layer comprises a first EL material capable of emitting a first colour of light, and a second layer comprises a second EL material capable of emitting a second colour of light, where a selected region of the first layer is coated in a metal capable of reducing EL properties of the first EL material in the selected region. In some examples, the first EL material and / or the second EL material comprise one or more of colloidal quantum dots, perovskites, and organic pi-conjugated molecules.

The application discloses a kind of electrically pumped colloidal quantum dot lasers of silicon-based substrate, belong to the technical field of semiconductor optoelectronic devices.The laser is stacked from bottom to top with doped silicon substrate, lower buffer layer, download carrier transport layer, colloidal quantum dot gain layer, upper carrier transport layer, upper protective layer, waveguide structure layer, upper buffer layer and electrode system.Doped silicon substrate surface is constructed with conductive optical confinement structure, the structure has vertical direction conductivity, and its effective refractive index at lasing wavelength is significantly lower than colloidal quantum dot gain layer.In addition, DFB grating structure is provided in transparent waveguide structure layer, and flat buried layer design is used to adapt solution method preparation process.The application solves the problems of silicon-based interface light leakage, parasitic waveguide effect and process compatibility, and can realize low-cost, low-threshold and high-stability laser output on silicon substrate without wafer bonding.

The invention relates to the technical field of new energy photovoltaic cell panels, in particular to a manufacturing method of a quantum photovoltaic cell panel, which comprises the following steps: S1, preparing core / shell structure colloidal quantum dot ink with uniform size and surface defect density less than or equal to 1 * 10cm; an improved continuous fluid chemical synthesis process is adopted, nuclear phase synthesis and shell layer coating are completed through a double-reaction-cavity serial connection structure, agglomeration is inhibited in cooperation with a surface modifier, the size uniformity of the quantum dots is remarkably improved (the size deviation is smaller than or equal to 3%), and the quantum dots are uniform in size. The surface defect density is controlled to be less than or equal to 1 * 10cm, and compared with traditional batch synthesis, the yield is greatly improved, and the unit cost is reduced; and by matching with a roll-to-roll (R2R) continuous deposition process, large-area continuous preparation of each functional layer is realized, the defects of pinholes, cracks and the like in a traditional coating process are avoided, the consistency of the device is improved, and a foundation is laid for industrial mass production.

The photodetector device (PDD), comprising at least one group of pixels (P1, P2, P3), includes: - a reference electrode (Eref) common to all pixels, - a continuous thin layer of colloidal quantum dots (CQD) common to all pixels, comprising a photosensitive region (n-CQD) capable of photogenerating electrical charges (h+, e-), and - a charge-collecting electrode (EC1, EC2, EC3) for the photogenerated charges specific to each pixel (P1, P2, P3), the charge-collecting electrodes (EC1, EC2, EC3) being configured to collect electrically positive photogenerated charges (h+). Figure for the abbreviation: Fig 4A