156 results about "Colloidal quantum dots" patented technology

The invention discloses a preparation method of size-controllable monodisperse indium antimonide colloidal quantum dots, which comprises the following steps: (1) preparing a precursor solution containing an indium precursor and an antimony precursor, and heating the precursor solution at 50-300 DEG C for 1-20 minutes; (2) in an inert atmosphere, raising the temperature of a solvent to a reaction temperature, injecting a reducing agent, then injecting the heated precursor solution, maintaining the reaction temperature for 10s-30min, and then stopping the reaction to obtain monodisperse indium antimonide colloidal quantum dots; the reaction temperature is 250 to 300 DEG C; in the reaction system in the step (2), the concentration of the indium precursor and the concentration of the antimony precursor are independently 0.4-8 mmol / L; the size of the monodisperse indium antimonide colloidal quantum dot is regulated and controlled by regulating and controlling the concentration of a precursor in a reaction system, the injection mode of a precursor solution and the growth time. According to the preparation method disclosed by the invention, accurate regulation and control on the size of the indium antimonide colloidal quantum dot can be realized without the help of a complex size selective precipitation technology.

The invention belongs to the technical field of biochemical sensing, and particularly relates to a sulfide colloidal quantum dot-based biosensor for exosome detection as well as preparation and application thereof. Transferring the sulfide colloidal quantum dot solution to a metal gate electrode of a high electron mobility transistor or a working electrode of a screen printing three-electrode to form a sulfide colloidal quantum dot film; coating the sulfide colloidal quantum dot film with an antibody protein modification layer, and closing non-specific active sites on the antibody protein modification layer by adopting bovine serum albumin; the antibody protein can be specifically bound with transmembrane protein corresponding to the surface of an exosome to be detected, so that the exosome to be detected is captured on the surface of the electrode, and meanwhile, based on the unique physical and chemical effect of the sulfide colloidal quantum dots, the modified electrode has the capability of sensing the distribution change of external charges, so that the detection sensitivity of the exosome to be detected is improved. Therefore, rapid and quantitative detection of the exosome is realized.

The invention provides a light spot detection visualization device and method, and aims to solve the problems of insufficient precision and insufficient interactivity of a traditional fluorescent color developing card in light spot detection. The device is composed of a detection array, a display module and a central controller, the detection array adopts the design of combining a PCB circuit substrate and a colloid quantum dot coating layer, and efficient photoelectric conversion and signal processing are achieved; the central controller analyzes the collected digital signals through an advanced algorithm, so that parameters such as the position and the size of the light spot are accurately calculated, and results are output to the display module to achieve visualization. According to the method, through electrode array partitioning and signal processing flow optimization, the detection efficiency is remarkably improved, and the cost is reduced. The core innovation point of the invention is that a unique hardware structure is combined with an intelligent algorithm, a low-cost and efficient solution is provided for a light spot detection technology, and the technical progress in the field is promoted.

The invention relates to a waveguide integrated infrared spectrum chip which comprises a first optical waveguide, and a plurality of infrared colloidal quantum dot detectors of different specifications are arranged in the length direction of the first optical waveguide. According to the waveguide integrated infrared spectrum chip, detectors made of different colloidal quantum dots are used, the detectors made of the different colloidal quantum dots are arranged on one optical waveguide, and when infrared light passes through the optical waveguide, the different detectors output different light currents.

Light is projected from a light source in a first direction towards a tooth. The light source generates at least infrared light in the wavelength range of 950nm to 2500nm. A colloidal quantum dot (CQD) sensor records one or more surface light distribution images produced at the surface of the tooth by the projected light and the one or more surface light distribution images are used to compute a defect condition of the tooth.

The invention discloses a colloidal quantum dot-based broadband super-radiation light-emitting diode and a preparation method thereof, belongs to the technical field of semiconductor devices, and solves the technical problem that the improvement of optical gain is limited due to insufficient spectrum regulation and control precision of colloidal quantum dots in the application of a super-radiation light-emitting diode in the prior art. The diode comprises a distributed Bragg reflector and a bar structure, wherein the bar structure is composed of an ITO cathode, an electron transport layer, a CQD active layer, a hole transport layer, a spacer layer, a current focusing structure layer, a hole injection layer and an Ag anode which are sequentially arranged from bottom to top and composed of the ITO cathode, the electron transport layer, the CQD active layer, the hole transport layer, the spacer layer and the current focusing structure layer; the distributed Bragg reflector is of a transverse Bragg reflection waveguide structure, and the structure comprises a plurality of pairs of alternating layers; the CQD active layer is filled with core-shell colloidal quantum dots; the spacing layer and the current focusing structure layer are of slit structures; and the Ag anode and the distributed Bragg reflector form a transverse cavity structure along the plane direction. The super-radiation light-emitting diode is suitable for the technical fields of broadband optical coherence tomography, gyroscope optical fiber sensing and the like.

The present invention relates to a ligand exchange technique for III-V group colloidal quantum dots. By employing a ligand surface treatment method, the invention facilitates the ligand exchange process in III-V group quantum dots while enhancing their solvent dispersibility. Furthermore, by substituting heterogeneous ligands, the invention enables the production of quantum dot ink based on environmentally friendly solvents and its application in device fabrication. Accordingly, the present invention proposes III-V group colloidal quantum dots incorporating heterogeneous ligands, a method for manufacturing environmentally friendly solvent-based quantum dot ink, and an optoelectronic device utilizing the ink.

The invention relates to a light emitting diode device based on quantum dots and a preparation method thereof, and belongs to the technical field of semiconductor devices. The light-emitting diode device based on the quantum dots comprises a light-emitting layer, the materials of the light-emitting layer comprise colloidal quantum dots and an organic light-emitting material; the mass ratio of the colloidal quantum dots to the organic light-emitting material is 100: (0.1-20); and the distribution gap of the colloidal quantum dots is larger than the unit cell size of the organic light-emitting material. By selecting proper colloidal quantum dots and organic light-emitting materials for compounding, dot gap defects are reduced, non-radiative recombination is inhibited, the structure of a functional layer of a device is optimized, and the carrier injection efficiency is improved, so that the photoelectric property of a colloidal quantum dot light-emitting layer is improved.

The invention provides a micro-fluidic chip and a manufacturing method thereof, the micro-fluidic chip comprises an injection channel, a mixing channel and a reaction channel, the mixing channel is communicated with the injection channel, and the reaction channel is communicated with the mixing channel; the reaction channel comprises at least two reaction sub-channels, and the lengths of the at least two reaction sub-channels in the reaction channel are unequal in the extension direction of the reaction channel. Quantum dot raw materials are injected from the injection channel of the micro-fluidic chip, and the quantum dot raw materials flow into the reaction channel after being uniformly mixed in the mixing channel; the longer the synthesis time of the colloidal quantum dots in the container is, the larger the size of the quantum dots is, and the lengths of at least two reaction sub-channels in the embodiment are not equal, so that the reaction time of the colloidal quantum dots is different, and the quantum dots with different sizes can be synthesized, namely, the quantum dots with different sizes can be synthesized through one test; the high-flux synthesis of the micro-fluidic chip is realized.

The invention relates to the technical field of tumor cell ectovesicle metabolism detection, and discloses a near-infrared colloidal quantum dot mark optimization system for ectovesicle metabolism detection. Comprising an electric pulse processing module used for generating millisecond electric pulses acting on cancer cells so as to unblock cell membrane outer vesicles corresponding to the cancer cells and increase cell membrane phosphoric acid structure permeability; the control module is used for marking near-infrared colloidal quantum dots corresponding to the cancer cells, the near-infrared colloidal quantum dots have available fluorescence spectrums in an infrared range, and the near-infrared colloidal quantum dots can cross a cell barrier processed by the millisecond-level electric pulse and can be used for detecting the cancer cells. Combining with macromolecular organic matters and metabolic substrates in extracellular vesicles; on the basis of the combined near-infrared colloidal quantum dots, macromolecular organic matters and metabolic substrates in the extracellular vesicles are detected, and efficient marking of the macromolecular organic matters and metabolic substrates in the extracellular vesicles of cancer cells is achieved.

The invention relates to an infrared detector based on 2.0 micron PbS colloidal quantum dots and a preparation method thereof, the infrared detector is composed of an anode conducting layer, a hole transport layer, a colloidal quantum dot film, an electron transport layer, an electron blocking layer and a cathode conducting layer, the colloidal quantum dot film adopts PbS-PbX, the preparation method adopts 9.7 nm PbS colloidal quantum dots to carry out liquid phase exchange, and the hole transport layer and the electron blocking layer are combined to form the infrared detector based on 2.0 micron PbS colloidal quantum dots. The PbS-PbX ink containing the halogen short-chain ligand is spin-coated on the hole transport layer. And the prepared infrared detector has a good rectification characteristic and relatively high infrared sensitivity at a 2350 nm infrared light source.

The application belongs to the field of electrochemical biosensors, and more particularly relates to a protein molecule labeling method for constructing a high-performance electrochemical sensor. In the application, organic ligands on the surface of sulfide colloidal quantum dots are replaced with water-soluble ligands through liquid-phase ligand replacement, and then mixed with a carboxyl activator to activate the carboxyl groups of the water-soluble ligands, followed by uniform mixing with protein molecules, so that the protein molecules are effectively labeled on the quantum dots. The quantum dots prepared in the application, which have water-soluble ligands on the surface and are labeled with protein molecules, are coated on the working electrode of a planar three-electrode system through a one-step method, and after drying, an electrochemical biosensor with a wide detection range, high response sensitivity and strong anti-interference performance is prepared.

The invention discloses a preparation and liquid-phase ligand exchange method of a sulfydryl-free silver telluride colloidal quantum dot, and the sulfydryl-free silver telluride colloidal quantum dot is prepared by adopting oleylamine as a solvent and a ligand for quantum dot synthesis, silver halide as a cationic precursor and organic lithium modified TOP-Te as an anionic precursor through a thermal injection method. The size and the absorption spectrum of the silver telluride quantum dots are adjusted by accurately regulating and controlling the reaction time, the temperature, the halogen type and the organic lithium content. The method is simple to operate and good in repeatability, and the prepared silver telluride quantum dots have excellent size distribution and adjustable absorption wavelength (856-1589 nm). On the basis of oleylamine coordinated silver telluride quantum dots, conductive ink dispersed in polar solvent colloid is obtained by adopting a liquid-phase ligand exchange method which is simple to operate, a flat, compact, crack-free and few-defect high-quality thin film is prepared through a single spin-coating process, and the thin film has application potential in the field of short-wave infrared detectors.

The invention relates to colloidal quantum dots on a silicon photomultiplier microcell matrix. The techniques employ colloidal quantum dots (CQDs) in which a CQD layer is disposed on an array of SiPM microcells of an image sensor for an imaging module. The CQD layer and the microcell array are individually biased. A method includes biasing a CQD layer of an imaging module at a first voltage, and biasing an array of photomultiplier microcells at a second voltage. Upon receiving photons, the CQD layer generates charge in response. Charge moves from the CQD layer into the array, where at least one photomultiplier microcell amplifies the charge. A signal is then output from the imaging module in accordance with the amplified charge. This method can significantly improve the photon detection efficiency of the imaging element, which can be used in a wide range of applications such as lidar, medical imaging and night vision or in other weak light imaging scenarios.

The invention provides a macro-energy disc laser hot mirror effect control system comprising a pump beam shaping system used for outputting shaped pump laser; the disc crystal generates large-energy laser under the excitation of the pump beam shaping system; the first detector is used for detecting heat distribution on the front surface of the disc crystal; the second detector is used for detecting the temperature change of the side surface of the disc crystal and / or the height change of the heated expansion of the disc crystal and the heat distribution of the side surface; wherein the first detector and the second detector are colloidal quantum dot mercury telluride infrared detectors, and the first detector and the second detector are respectively connected with a control system. And the control system adaptively regulates and controls the pump laser output by the pump beam shaping system based on detection results of the first detector and the second detector, so that the hot mirror effect of the disc crystal is controlled, and the optical performance of the macro-energy disc laser is further improved.

This application discloses a method for preparing a trimethylaluminum-doped lead selenide colloidal quantum dot film. The method comprises: obtaining a fifth mixed solution; spin-coating the fifth mixed solution onto a target sample and annealing the solution for a preset annealing time to obtain an initial lead selenide colloidal quantum dot film; placing the initial lead selenide colloidal quantum dot film in a chamber, evacuating the chamber until the pressure reaches a preset pressure, heating the initial lead selenide colloidal quantum dot film to a preset temperature; and introducing trimethylaluminum gas into the chamber to obtain the trimethylaluminum-doped lead selenide colloidal quantum dot film. This application can improve the mobility of colloidal quantum dot detectors.

One embodiment of the present invention provides a photodetector comprising a light-absorbing layer that is formed between an upper electrode and a lower electrode and contains a fluorine-based organic polymer and colloidal quantum dots. According to the embodiment, using the newly proposed light-absorbing layer enables reducing surface defects of the quantum dots in the photodetector while simultaneously improving operational stability.

The present invention relates to a colloidal quantum dot material, which comprises colloidal quantum dots and a colloidal quantum dot ligand, and the colloidal quantum dots are encapsulated within the colloidal quantum dot ligand. The colloidal quantum dot ligand has the following structural formula (I). On the one hand, the colloidal quantum dot ligand with this structure can help the colloidal quantum dots disperse in solution, thereby realizing solution processing. On the other hand, after the colloidal quantum dot material forms a film, the colloidal quantum dot ligand can be decomposed into a short-chain structure through a simple annealing process, thus eliminating the traditional multiple ligand exchange and elution processes. The array of colloidal quantum dot photodetectors prepared based on the technical solution of the present invention has an ideal external quantum efficiency.

The embodiment of the present application provides a short-wave infrared focal plane sensor, a manufacturing method thereof and a short-wave infrared detector. The short-wave infrared focal plane sensor comprises a TFT backplane and a colloidal quantum dot photoelectric conversion layer arranged on the TFT backplane. The orthographic projection of the colloidal quantum dot photoelectric conversion layer on the TFT backplane covers the sensing area of the TFT backplane and is used for sensing short-wave infrared light. The TFT backplane comprises a substrate base plate and a thin film transistor layer arranged on the sensing area of the substrate base plate. The thin film transistor layer is arranged between the substrate base plate and the colloidal quantum dot photoelectric conversion layer and comprises a plurality of thin film transistors. Each thin film transistor corresponds to a pixel. The side of the colloidal quantum dot photoelectric conversion layer facing the TFT backplane is provided with a plurality of bias electrodes, and the side of the colloidal quantum dot photoelectric conversion layer facing away from the TFT backplane is provided with a common electrode. Each bias electrode corresponds to a thin film transistor. The common electrode covers the colloidal quantum dot photoelectric conversion layer, and the common electrode and the bias electrode are made of the same material.

The invention provides a micro-fluidic chip for high-flux synthesis of colloidal quantum dots and a use method of the micro-fluidic chip, and relates to the technical field of colloidal quantum dot synthesis. The micro-fluidic chip comprises: a substrate; the microfluidic channel is arranged on the substrate and is configured to be of a hollow channel structure, and the microfluidic channel comprises a plurality of liquid inlets used for injecting raw materials and functional solutions required for synthesizing colloidal quantum dots; the plurality of liquid outlets are respectively formed in different positions of the microfluidic channel and are used for outputting the colloidal quantum dot solution; the micro-fluidic chip is configured to enable raw materials or functional solutions required for synthesizing the colloidal quantum dots to stay for different time in the micro-fluidic channel, so that the colloidal quantum dots with different sizes are generated. According to the micro-fluidic chip, different liquid outlets are formed in different positions of the micro-fluidic channel, so that the retention time of raw materials or functional solutions required for synthesizing colloidal quantum dots in the micro-fluidic channel is different, and colloidal quantum dots with different sizes can be obtained by collecting colloidal quantum dot solutions at different positions.

The invention discloses a preparation method of a water-soluble copper-iron-sulfur colloidal quantum dot with near-infrared absorption characteristic, hexamethyldisilazane is used as a sulfur precursor, an organic sulfur source and an n-octadecene solvent can rapidly form a colloidal quantum dot nucleation site, and the nucleation and growth process of the quantum dot is controlled in stages. Therefore, the CuFeS2 colloidal quantum dot has a tetrahedral morphology and has a determined exposed crystal face. The CuFeS2 colloidal quantum dots prepared by the method are uniform in morphology, uniform in size and narrow in particle size distribution; the process is simple and easy to implement, synthesis equipment is low in price, molecular beam epitaxy equipment and the like required by a traditional semiconductor are not involved, and the method is very suitable for high-productivity preparation of colloidal quantum dots for photoelectric detection and photovoltaic devices.

One embodiment of the present invention provides a colloidal quantum dot-based optical amplification photoelectric device and an infrared photodetector using same. The colloidal quantum dot-based optical amplification photoelectric device according to an embodiment of the present invention can achieve a quantum efficiency of approximately 400% in the infrared region (900–1000 nm) by using a quantum tunneling effect that occurs when photo-generated holes are accumulated in an organic semiconductor-based hole transport layer and a strong electric field is applied locally.

The invention discloses a short-wave infrared color imaging method and an optical system, relates to the technical field of photoelectric imaging, and mainly receives, converges and splits short-wave infrared light waves to form three sub-band light waves which are respectively focused and imaged to three colloidal quantum dot short-wave infrared imaging devices. When color imaging is needed, light splitting is carried out twice to obtain three sub-band image information, and the three sub-band image information is transmitted to the input end of a color display, so that short-wave infrared multi-band common-optical-path color imaging is realized, and the problem that color imaging cannot be realized is solved. According to the main technical scheme, the short-wave infrared color imaging optical system comprises a common-path objective lens, a light splitting assembly and three imaging devices; the common-path objective lens is used for receiving and converging incident light waves and then emitting the incident light waves to the light splitting assembly, and the light splitting assembly is used for carrying out dichroic light splitting on the converged light waves to form three sub-band light waves which are respectively imaged on the three imaging devices; and different sub-bands have different wavelength ranges of light waves. The method is mainly used for short-wave infrared color imaging.

An embodiment of the present invention discloses an infrared detector, an infrared imager, and a preparation method of the infrared detector. The infrared detector includes at least one pixel, and the pixel includes: a substrate layer, at least one stacked structure, and a top electrode layer sequentially arranged from bottom to top; the stacked structure includes an electrode layer and a quantum dot infrared absorption layer sequentially arranged from bottom to top; wherein, the quantum dot infrared absorption layer contains a preset number of colloidal quantum dots for detecting infrared radiation; wherein, the wavelengths of the infrared radiation detected by the quantum dot infrared absorption layers in different stacked structures are different. The preparation process of this infrared detector is simple and the cost is low. In addition, since the wavelengths of the infrared radiation detected by the quantum dot infrared absorption layers in different stacked structures are different, integrating infrared detection materials with different detection wavelengths on the same substrate structure can better expand the detection range of the infrared detector and improve the system performance.

A laser designation system is provided including a high-definition broad-band visible-shortwave infrared (SWIR) sensor. The SWIR sensor includes a colloidal quantum dot sensor operative across a spectral band of from about 400 nm to 2400 nm or any subset of wavelengths therein.

A method of synthesising AB colloidal quantum dots (CQDs) is provided, wherein A is Al, Ga, In or a mixture thereof, and B is P, As, Sb or a mixture thereof. The method comprises the steps of: a) reacting AX3 and BX3, where is X is Cl, Br or I, with metal bis(trimethylsilyl)amide, wherein said metal is Li, Na, K or Cs, in at least one long chain amine at an elevated temperature to form A and B silylamides; b) further reacting the A and B silylamides with the at least one long chain amine to form triamides of A and B; c) injecting a reducing agent to balance the reactivity of the triamides of A and B to form nanocrystals of AB CQDs covered by organic ligands; and d) isolating and purifying the AB CQDs. Also provided are CQDs formed by such a method, and devices that incorporate such CQDs.

A photodetector device includes a group of pixels. A common reference electrode is shared between the pixels of the group of pixels. A continuous and common colloidal quantum dot thin film is shared by the pixels, including a photosensitive region capable of photogenerating electric charges. An electrode for collecting photogenerated charges is provided for each pixel. The electrodes collecting the charges are configured to collect electrically positive photogenerated charges.

The invention provides a quantum dot phototransistor capable of realizing high-performance infrared detection and a preparation process of the quantum dot phototransistor, and belongs to the field of photoelectric components. Comprising a substrate, a metal electrode pair, a ZnO film and Ag2Te quantum dots which are arranged in sequence, and a high-speed center spin-coating method is adopted. The high-performance photoelectric detector based on the Ag2Te colloidal quantum dots is prepared by adopting a high-speed center spin-coating method technology, the detector has a simple transistor structure of Ag2Te / ZnO, carrier transport is accelerated through regulation and control of grid voltage and channel voltage, the performance of the device is further improved, the device has excellent performance from visible light to near infrared light, and the photoelectric detector has good application prospects. And under the incident light of 660 nm, the response rate (2050 A / W) and the detection rate (4.8 * 10 < 13 > Jones) are ultrahigh, and under the incident light of 940 nm, the response rate (2450 A / W) and the detection rate (6.8 * 10 < 13 > Jones) are ultrahigh.

The present invention provides a method of preparing a nanocrystal composition comprising an inorganic ligand by one-pot synthesis. The invention also provides nanocrystals comprising the novel inorganic ligands and uses thereof. The invention also provides application of the novel inorganic ligand in preparation of nanocrystals.

A colloidal quantum dot (CQD) based image sensor. The CQD based image sensor includes a top contact layer, a light absorption layer, a readout integrated circuit (ROIC), and a pixel electrode. The quantum dot film includes colloidal quantum dots. The pixel electrode is positioned between the quantum dot film and the ROIC.