Sedimentation growing method of semiconductor nanocrystalline/quantum dots on single crystal silicon material
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANGHAI NORMAL UNIVERSITY
- Publication Date
- 2011-09-14
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a method for depositing and growing semiconductor nanocrystals / quantum dots on crystalline silicon materials, and belongs to the field of solar photoelectric conversion materials. Background technique
[0002] Semiconductor nanocrystals or quantum dots have the characteristics of high extinction coefficient, large intrinsic dipole moment, modulated energy gap, easy ionization, and generation of multiple excitons. As a light absorber, they are obviously superior to metal organic dyes. The thermodynamic efficiency breaks through 44%. Nano-TiO sensitized with CdSe quantum dots 2 The photoelectric efficiency of crystalline solar cells (QDSCs) reaches about 10%, the production cost is only 1 / 5-1 / 10 of that of silicon solar cells, and the life span can reach more than 20 years. It is considered to be the most promising third-generation solar cell. However, the efficiency of QDSCs still lags behind that of dye-sensitized solar cells...