Sedimentation growing method of semiconductor nanocrystalline/quantum dots on single crystal silicon material

A growth method and technology of quantum dots, which are applied in semiconductor devices, sustainable manufacturing/processing, photovoltaic power generation, etc., can solve the problems of narrow crystalline silicon energy band, increase production cost, sunlight loss, etc., achieve easy industrial application, improve Utilization efficiency, stable effect of physicochemical properties

Inactive Publication Date: 2011-09-14
SHANGHAI NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The main constraints on the conversion efficiency and production cost of silicon crystal solar cells are: crystalline silicon has a narrow energy band and can only absorb sunlight at 600-1000nm, and solar energy higher than the energy gap can only be lost in the form of "hot electrons" - heat energy
On the other hand, standard flat silicon cells partly lose sunlight through reflection
To reduce this loss, battery manufacturers coat the batteries with Si 3 N 4 Anti-reflective coatings, or etching the surface of the cell to increase photon absorption, a process that would also add significantly to production costs

Method used

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  • Sedimentation growing method of semiconductor nanocrystalline/quantum dots on single crystal silicon material
  • Sedimentation growing method of semiconductor nanocrystalline/quantum dots on single crystal silicon material
  • Sedimentation growing method of semiconductor nanocrystalline/quantum dots on single crystal silicon material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] The specific steps of the preparation method of the quantum dot-sensitized Si solar cell provided in this example are as follows: a) Dissolve 1.8 g of lead acetate in 8 ml of oleylamine, heat to 120° C. for 30 min, and evacuate with argon for 3 min.

[0042] b) Dissolve 0.023g of sulfur in 6mL of oleic acid, stir and heat to 80°C for 10min.

[0043] c) Inject the sulfur solution into the metal salt solution and keep it warm for 1 min, take it out, disperse it with n-hexane and oleic acid at a ratio of 1:2, centrifuge, remove the upper layer solution, re-disperse it with n-hexane, centrifuge once, and dry it.

[0044] d) Dissolving the quantum dots in n-hexane for later use.

[0045] e) Put the diffusion-treated monocrystalline silicon wafer into the solvent for 30 minutes, take it out, and treat it in vacuum at 250° C. for 2 hours.

[0046] f) The single crystal silicon wafer after the diffusion treatment is put into a solvent and pulled at 5 cm / s, repeated 15 times, a...

Embodiment 2

[0050] The preparation method of this example is the same as that described in Example 1, except that in step a), 1.8 g of lead acetate is dissolved in 5 ml of oleylamine, heated at 120° C. for 30 minutes, and evacuated with argon for 3 minutes.

Embodiment 3

[0052] The preparation method of this example is the same as that described in Example 1, except that in step a), 1.8 g of lead acetate is dissolved in 12 ml of oleylamine, heated at 120° C. for 30 minutes, and evacuated with argon for 3 minutes.

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Abstract

The invention discloses a sedimentation growing method of semiconductor nanocrystalline/quantum dots on a single crystal silicon material. The semiconductor nanocrystalline/quantum dot is composed of the materials with the following weight ratio: 1 to 100 parts of sulphur, selenium, sulfide or selenide, 1 to 100 parts of metal salt, 100-500 parts of solvent, 1-10 parts of coupling agent, a crystal silicon material and a silicon wafer. The crystal silicon material is taken as the matrix, colloidal quantum dots are composed in advance, then the coupling molecules are added, and the colloidal quantum dots are connected to the crystal silicon material through the spin coating and dispensing methods and the dip-coating technology. The semiconductor nanocrystalline/quantum dot has very stable physicochemical property, and the photoelectric conversion efficiency can not be influenced even though the quantum dot is exposed in air for a long time; and the preparation process is simple and easyto operate, the source of feed is abundant, and the quantum dot is easy for industrial applications, low in price and easy to be obtained.

Description

technical field [0001] The invention relates to a method for depositing and growing semiconductor nanocrystals / quantum dots on crystalline silicon materials, and belongs to the field of solar photoelectric conversion materials. Background technique [0002] Semiconductor nanocrystals or quantum dots have the characteristics of high extinction coefficient, large intrinsic dipole moment, modulated energy gap, easy ionization, and generation of multiple excitons. As a light absorber, they are obviously superior to metal organic dyes. The thermodynamic efficiency breaks through 44%. Nano-TiO sensitized with CdSe quantum dots 2 The photoelectric efficiency of crystalline solar cells (QDSCs) reaches about 10%, the production cost is only 1 / 5-1 / 10 of that of silicon solar cells, and the life span can reach more than 20 years. It is considered to be the most promising third-generation solar cell. However, the efficiency of QDSCs still lags behind that of dye-sensitized solar cells...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/04H01L31/0216H01L31/18H01L31/06
CPCY02E10/50Y02P70/50
Inventor 余锡宾王飞久杜梦娟张坤浦旭鑫
Owner SHANGHAI NORMAL UNIVERSITY
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