256 results about "Photoelectric efficiency" patented technology

The present invention relates to a counter electrode for DSSC which includes a porous membrane include a carbon-based material calcinated at high temperature and a platinum nano-particles and maintains higher conductivity than a thin membrane and in which the electrolyte moves smoothly, a method of preparing the same, and a DSSC using the same which is improved in photoelectric efficiency.

Disclosed herein are a metal oxide paste composition comprising a carboxylic ester dispersant and/or a phosphate dispersant, and a method for manufacturing a semiconductor electrode for solar cells using the same. The disclosed metal oxide paste composition improves the dispersibility of metal oxide nanoparticles. Thus, if it is used to manufacture a semiconductor electrode for solar cells, it will allow the increased adsorption of a dye, thus improving the photoelectric efficiency of the resulting solar cell.

The invention discloses a preparation method for a cesium lead bromide inorganic perovskite thin film and a photovoltaic device based on the cesium lead bromide inorganic perovskite thin film. An unstable yellow oblique-phase CsPbI3 thin film is prepared by employing a one-step solution method and then is converted to a stable black cubic-phase CsPbBr3 thin film by employing a Br2 steam thermal injection gas-phase deposition method. Gas-phase exchange reaction of halide ions is utilized, I<-> in CsPbI3 is substituted by Br<-> with smaller radius, the purpose of lattice shrinkage, phase changesuppression and stability improvement are achieved, the bottleneck problem that Br solubility of a traditional one-step solution method is limited can be effectively solved, and the problems that thethin film is easy to fall during immersion of a two-step solution method also can be prevented; and meanwhile, the prepared CsPbBr3 thin film is also used as a light absorption layer to prepare an FTO/c-TiO2/m-TiO2/CsPbBr3/C perovskite solar cell with an all-inorganic structure, the photoelectric efficiency of a battery in initial batch reaches 3.23%, and the battery shows favorable long-term stability.

The invention discloses a preparation technology of a visible-light response WO3 nanosheet array film electrode. The preparation technology comprises the following steps that Na2WO4.2H2O and ammonium oxalate are dissolved in deionized water to react with hydrochloric acid to obtain tungstic acid precipitates, and the tungstic acid precipitates react with H2O2 to obtain a clear peroxotungstic acid solution; an ethyl alcohol reducing agent is added into the peroxotungstic acid solution, fluorine-doped tin oxide (FTO) conducting glass serves as a substrate to be placed in the solution, under the water bath condition, the peroxotungstic acid is slowly reduced into tungstic acid, the tungstic acid is slowly separated out on an FTO film, and then a tungstic acid film is obtained; after being cleaned and dried, the tungstic acid film is calcined to obtain the WO3 nanosheet array film electrode. The preparation technology has the advantages of being simple, convenient, mild, efficient and suitable for large-scale preparation. The prepared WO3 nanosheet array film electrode has the good visible-light absorption property and good stability and is high in photoelectric efficiency, good in photoelectrocatalytic degradation effect on organic matter and capable of being applied to the fields of photoelectrocatalysis hydrogen production and organic matter degradation, and the better effect is achieved.

A flip-chip light emitting diode is disclosed, and includes: a substrate, a semiconductor multilayer structure, first and second electrodes, first and second diamond-like-carbon/conductive-material composite structures, and a passivation layer, wherein, the passivation layer is a stacked structure possessing a material of different refractive index, and the first and second diamond-like-carbon/conductive-material can buffer thermal stress in the flip-chip light emitting diode. Therefore, the flip-chip light emitting diode can improve the whole photoelectric efficiency, and prevent the photoelectric characteristic of elements from being decreased, and accordingly its reliability and service life are improved. A method of manufacturing the abovementioned flip-chip light emitting diode and application thereof are also disclosed.

A semiconductor electrode, a fabrication method thereof and a solar cell including the semiconductor electrode each include a metal oxide layer of metal oxide nanoparticles having dye molecules adsorbed thereon. In the semiconductor electrode of the present invention, the surface of the metal oxide layer is treated with an aromatic or heteroaromatic organic material having an electron-donating group. Thus, since the semiconductor electrode can provide an effect of improving photoelectric efficiency by virtue of an increase in short-circuit photocurrent density and open-circuit voltage, it can be applied to a high efficiency solar cell.

Disclosed are inorganic nanomaterial-based hydrophobic charge carriers and an organic-inorganic hybrid perovskite solar cell using the charge carriers. In the solar cell, the charge carriers are used as materials for a charge transport layer. The solar cell has high photoelectric efficiency for its price. In addition, the solar cell is prevented from being degraded by moisture. Therefore, the solar cell can be operated stably for a long time despite long-term exposure to a humid environment.

Disclosed herein is a photovoltaic cell using catalyst-supported carbon nanotubes and a method for producing the same. More particularly, the photovoltaic cell includes a photo anode, a cathode including a layer of metal catalyst particle supporting carbon nanotubes, and an electrolyte disposed between the photo anode and the cathode. The photovoltaic cell is economic in terms of production costs and process steps, and shows improved catalytic activity due to an enlarged contact area and conductivity, resulting in excellent photoelectric efficiency.

The invention belongs to the field of solar cell manufacturing processes, in particular relates to a solar cell manufacturing process for blocking back diffusion by using a mask. Before a silicon chip is diffused, a silicon dioxide or silicon nitride mask is prepared on the back side of the silicon chip, and a back side mask before diffusion prevents the formation of PN junctions on the back side in a silicon chip diffusion process, so that the problem of short circuits of upper and lower electrodes of the silicon chip can be solved directly, and edge and back side etching processes after diffusion can be eliminated. Therefore, losses such as cell damage, efficiency reduction and the like caused by edge etching are avoided. Moreover, passivation effect can be acted on the back side of the silicon chip when the back side of the silicon chip is masked, so that the photoelectric efficiency of a solar cell can be improved effectively, and the process is suitable for industrial production.

The present disclosure provides GaN based LED epitaxial structure and a method for manufacturing the same. The GaN based LED epitaxial structure may comprise: a substrate; and a GaN based LED epitaxial structure grown on the substrate, wherein the substrate is a substrate containing a photoluminescence fluoresent material. The photoelectric efficiency of the LED epitaxial structure is enhanced and the amount of heat generated from a device is reduced by utilizing a rare earth element doped Re 3 Al 5 O 12 substrate; since the LED epitaxial structure takes a fluorescence material as a substrate, a direct white light emission may be implemented by such a LED chip manufactured by the epitaxial structure, so as to simplify the manufacturing procedure of the white light LED light source and to reduce the production cost. The defect density of the epitaxial structure is reduced by firstly epitaxial growing, pattering the substrate and then laterally growing a GaN based epitaxial structure.

The invention discloses a method for removing a silicon solar cell diffusion death layer. The method comprises the following steps: (1) removing phosphorosilicate glasses of a diffused silicon chip; (2) carrying out oxidation treatment on a surface of the silicon chip so as to form a silicon dioxide layer; (3) removing the silicon dioxide layer. In the invention of the invention, an oxidation process is adopted to form the silicon dioxide layer on the surface of the diffused silicon chip. A part of silicon is consumed by oxidation so that the oxidation silicon layer is formed, and then the oxidation silicon layer is removed so as to reach a purpose of etching away a layer of the silicon surface. The diffusion death layer is removed. Recombination of the high density surface diffusion layer can be reduced. Short-wave responses can be raised. Experiments confirm that by using the method of the invention, a short circuit current of the solar cell can raise 1% and photoelectric efficiency of the cell can raise 0.1-0.2.

The invention discloses a preparation method of a bi-pass large-area TiO2 nanotube array film, which includes the following steps of: preparing a first-grade preliminary product through the anodic oxidation of a pretreated titanium sheet; obtaining a second-grade preliminary product by cleaning the first-grade product with de-ionized water, putting the first-grade product into a vessel with absolute ethyl alcohol, putting the vessel into an ultrasonic cleaner for ultrasonic vibration and causing the TiO2 nanotube array film to be separated from a pure titanium matrix; obtaining a third-grade preliminary product with a barrier layer at the bottom after cleaning the second-grade product with absolute ethyl alcohol and putting and drying the second-grade product in a threshold CO2 drying box; obtaining the finished product by putting the second-grade product into the mixed acid solution and removing the barrier layer at the bottom through acid cleaning; and cleaning, airing or drying the finished product after being put into the absolute ethyl alcohol. The preparation method is simple and convenient in technical operation and reasonable in design. The prepared bi-pass large-area smooth TiO2 nanotube array film has higher photoelectric efficiency and can be effectively applied in the fields of gas separation, drug delivery, bone fixation, and the like.

The invention discloses a titanium dioxide nanocomposite and a one-step preparation method by utilizing an anodic oxidation device; the preparation method comprises the steps of: polishing a pure titanium sheet to be smooth, cleaning ultrasonically and drying, fixing the pure titanium sheet to an anode by the anodic oxidation device, fixing a platinum gauze electrode to a cathode, and placing the pure titanium sheet and the platinum gauze electrode into electrolyte to perform an electrochemical reaction, wherein the electrolyte is an ethylene glycol/water mixing solution of ammonium fluoride, the concentration of NH4F in the solution is 0.1wt%-0.5wt%, the volume ratio of water is 1vol%-5vol%, the temperature of the solution is kept to be 20 DEG C-60 DEG C,the reaction time is 16 hours-48 hours, and the anodic oxidation voltage is 50V-70V. In the invention, the preparation process with low cost and simple preparation process is provided, a composite structure material of a nanotube and a nanowire in a microstructure can be provided, and good photoelectric efficiency is achieved.

A photovoltaic device having a relatively high photoelectric efficiency and a method of manufacturing the same. The photovoltaic device according to an embodiment of the present invention includes a transparent electrode, a metal electrode, and a plurality of photovoltaic layers between the transparent electrode and the metal electrode. The photovoltaic layers include light-absorbing compounds for absorbing different light absorption wavelength bands, and each of the photovoltaic layers comprises an electron accepting material. As such, a photovoltaic device according to an embodiment of the present invention includes a plurality of photovoltaic layers having different light absorption regions, and thereby having relatively high photoelectric efficiency.

Disclosed is a photoelectric element, composed of a photoelectric lamination layer and a magnetic member, wherein the magnetic member is arranged inside or adjacent to the photoelectric lamination layer and generates a magnetic field to pass through the photoelectric lamination layer. The magnetic member generates a magnetic field penetrating the photoelectric lamination layer, thereby making the motion charge carriers inside the photoelectric lamination layer change the motion path thanks to the Hall effect and accordingly raise the photoelectric efficiency.

The invention belongs to the field of a solar battery manufacture process, in particular to a crystalline silicon solar battery edge etching process, which comprises the steps of edge etching and residue removal. The invention adopts a corrosive chemical pulp spray coating method for etching the edge of a silicon chip, the etching amount of the periphery of the silicon chip surface can be controlled within 0.2 mm, the PN junction loss of the silicon chip surface can be greatly lowered, the light absorption of the light absorption surface of the silicon chip can be improved, the photoelectric efficiency of batteries can be improved, the process is stable, and the control is easy.

The invention belongs to the field of solar cell making process, in particular relates to a solar cell making process capable blocking edge diffusion by using masks. In the process, silicon dioxide or silicon nitride masks are prepared around the edge of a silicon chip before the silicon chip is diffused; the mask on a front edge is diffused, so that PN nodes are not formed around the edge of the silicon chip in a diffusing process; and PN nodes on the front side and the back side of the silicon chip are isolated, so that the problem of short circuit of upper and lower electrodes of the silicon chip is solved radically and the photoelectric efficiency of a solar cell can be improved effectively. Therefore, the process is suitable for industrial production.

The invention provides a fabrication method of a slice cell. The fabrication method comprises the steps of obtaining a plurality of independent sub-cell pieces after laser scribing and cracking on thewhole cell, wherein each sub-cell piece is provided with at least one crack surface; and performing thermal oxidization on the crack surface, wherein the crack surface comprises the step of processing the sub-cell pieces for 20-60 minutes at 180-230 DEG C under an oxygen-containing atmosphere. After the whole cell is cracked, thermal oxidization is performed on the crack surfaces of the independent sub-cell pieces, the recombination of photo-generated carriers generated at the crack surfaces due to photoelectric effect can be prevented by silicon dioxide protection films formed on the crack surfaces, and the photoelectric efficiency of the slice cell is further and greatly improved. The invention also provides the slice cell fabricated by the method of the slice cell and a photovoltaic module comprising the slice cell.

The invention discloses a modular household light storage system capable of automatically scheduling energy and a control method. The modular household light storage system comprises an energy storagebattery, a light storage integrated converter, a battery management system, an energy management system, a photovoltaic module, a power grid, a user load and a direct current bus; wherein the energystorage battery, the light storage integrated converter, the battery management system and the energy management system are placed in an electric box; the photovoltaic module, the power grid, the userload and the direct current bus are arranged outside the electric box; the energy storage battery, the light storage integrated converter, the battery management system and the energy management system are placed in an electric box; the energy storage battery, the photovoltaic assembly, the power grid and the user load are connected to the direct current bus through the light storage integrated converter. The input end of the energy management system is connected with the photovoltaic module, the power grid, the user load and the battery management system arranged on the energy storage battery. The output end of the energy management system is connected with the light storage integrated converter, and according to the light storage system, the problems that an existing photovoltaic powergeneration system is unstable, intermittent, low in photoelectric efficiency and difficult to maintain can be solved.

The invention discloses a manufacturing method for a double-face illuminated crystalline silicon solar cell. The method comprises the following steps of: (1) washing a raw silicon chip, and removing a damaged layer from the back face of the raw silicon chip; (2) performing single-face boron diffusion on the front face of the silicon chip in a back-to-back way, wherein the back face of the silicon chip is a diffusing face; (3) depositing a mask layer on the back face of the diffused silicon chip; (4) washing the front face of the silicon chip, removing a damaged layer, performing texturing, and removing a diffraction diffusion layer; (5) performing single-face phosphorus diffusion on the back face of the silicon chip in a back-to-back way, wherein the front face of the silicon chip is the diffused face; (6) removing a peripheral joint, impurity glass and a mask which are formed by the diffusion; (7) depositing an anti-reflection coating on each of the two faces of the silicon chip; and (8) printing a metal electrode on each of the two faces of the silicon chip, and performing sintering to obtain the double-face illuminated crystalline silicon solar cell. The influence of diffraction on the electrical properties of the cell is avoided, and the photoelectric efficiency of the cell can be improved by 0.3 to 0.5 percent; and the method has positive practical significance.

The invention provides a passivation method for a sliced battery, comprising the steps of: performing an ozonization treatment on the fracture surface of the sliced battery, wherein the ozonization treatment includes: spraying an ozone-containing passivation gas onto the fracture surface of the sliced battery at room temperature. There is also provided a passivation device for the sliced battery,comprising a passivation chamber capable of accommodating at least one sliced battery, and an ozone spraying unit for spraying the passivation gas onto the fracture surface of the sliced battery. A battery slice obtained by using the passivation method and a photovoltaic module composed of the battery slice are also provided. The passivation method and device can form a silicon dioxide protectivelayer on the fracture surface of the sliced battery to avoid recombination of photo-generated carriers on the fracture surface, thereby greatly improving the photoelectric efficiency of the sliced battery.

The invention discloses a LED automobile anti-fog lamp, whose object is to provide a automobile anti-fog lamp with long service life, low use temperature and high photoelectric efficiency. The LED automobile anti-fog lamp includes: a casing, a front lens, a light gathering cup and a luminous body, wherein the front lens is installed on the casing in an embedding connection, the luminous body and the light gathering cup are installed in the casing, which is characterized in that: the luminous body is a yellow LED lamp string, wherein the front end of the LED lamp string has a light gathering cup, and the back end clings to the frontend of a heating body; a cavity is in the heating body; a water inlet is installed on the lower part of the cavity and a water outlet is on the upper part of the cavity; the water inlet and outlet are communicated with an automobile water tank through a water pipe. A driver of the LED lamp string includes: a LED drive circuit and a strong and weak light control circuit, wherein, the LED drive circuit has double input ends, one is a strong light control input end, and the other is a weak light control input end; the strong and weak light control circuit has double output ends, one is a strong light control output end, and the other is a weak light control output end.