71 results about "Photoelectric efficiency" patented technology

The invention discloses a solar cell, a photovoltaic module and a manufacturing method of the solar cell, relates to the technical field of solar cells, and aims to solve the problem of how to enable the photoelectric efficiency of the solar cell to reach a relatively high level. The solar cell comprises a semiconductor substrate, a first doped layer and a second doped layer. The semiconductor substrate comprises a first surface and a second surface which are opposite; the first surface comprises a first electrode region and a first non-electrode region; the surface of the first electrode area is provided with a first texture structure, and the first non-electrode area is provided with a second texture structure; the second surface comprises a second electrode region and a second non-electrode region; the second non-electrode area is provided with a third texture structure, and the size consistency of the second texture structure is larger than that of the third texture structure; the first doping layer is arranged in the first electrode region; the second doped layer is arranged in the first non-electrode region; the doping concentration of the first doping layer is larger than that of the second doping layer.

The invention provides a perovskite absorption layer and a preparation method thereof, and a polyion liquid-ion liquid synergistically modified perovskite solar cell, belongs to the technical field of solar cells, and aims to solve the problems of bulk phase and interface defects of the perovskite solar cell. The preparation method of the perovskite absorption layer comprises the following steps: dispersing and dissolving a perovskite precursor, polyionic liquid and ionic liquid into an organic solvent to prepare a perovskite precursor solution; and spin-coating the perovskite precursor solution to form a film, and annealing to obtain the perovskite absorption layer. According to the invention, polyionic liquid (PIL) and ionic liquid (IL) are preferably and synergistically added into a single-junction or multi-junction photovoltaic cell containing perovskite junctions, so that dual passivation of bulk phase and interface defects is realized; and the film uniformity and the photoelectric efficiency are improved.

The invention relates to the technical field of optical fiber communication, in particular to a thin-film lithium niobate electro-optical modulator of a stepped electrode, which comprises a substrate, a buffer layer, an optical waveguide, a metal electrode and a transition layer, the optical waveguide is an X-shaped or Y-shaped cutting LN film, a traditional ridge-shaped structure is adopted, the optical waveguide is bonded to the thick SiO2 buffer layer on the substrate, the film can be prepared through various technologies such as ion implantation, wafer bonding and hot slicing, and in order to improve the electro-optical overlapping coefficient and reduce light absorption loss, a silicon dioxide transition layer is used for connecting the metal electrode and the optical waveguide. The metal electrode is of a stepped structure, the electrode can effectively reduce electrical loss and obtain high bandwidth, and the electrode is used for generating an electric field in the aspect of photoelectric efficiency; the electric field is used for changing the functional characteristics of the thin-film lithium niobate layer and further changing the optical transmission characteristics of the waveguide, so that electro-optical modulation is realized. Therefore, the problem that an existing electro-optical modulator is low in modulation efficiency is solved.

The present invention belongs to the field of solar cell technology and discloses a 2D / 3D perovskite solar cell and its preparation method. A glass slide is added to the surface of the 2D perovskite layer to allow full contact between the PEAI solution and the 3D perovskite surface. PEAI is used as a 2D perovskite barrier layer, and a 2D covering layer is grown in situ on top of the 3D perovskite film. The annealing method of the 2D layer and the concentration of PEAI are improved. A low-temperature carbon slurry is used to replace the hole transport layer (HTM) and the metal electrode to prepare a 2D / 3D perovskite solar cell. The present invention uses a low-temperature carbon slurry to replace the expensive hole transport layer (HTM) and metal electrode, avoiding the long-term placement of the metal electrode and the perovskite layer. It also greatly reduces the experimental cost. The perovskite cell prepared by the present invention has low cost and significantly improved thermal stability. After heating at 70°C for 10 hours, it can still maintain 90% of the initial efficiency and the photoelectric efficiency can reach 14.63%.

The invention discloses a solar cell and a preparation method thereof. The solar cell comprises a silicon substrate, a passivation contact structure located on the back face of the silicon substrate and a back face electrode. The passivation contact structure comprises a tunneling layer located on the back face of the silicon substrate, a first doped polycrystalline silicon layer located on the back face of the tunneling layer, a spacer layer located in a grid line area on the back face of the first doped polycrystalline silicon layer and a second doped polycrystalline silicon layer located on the back face of the spacer layer. According to the passivation contact structure, film layers in a grid line area and a non-grid line area are different in thickness, the grid line area is of a four-layer structure, the thickness is large, the grid line area is provided with two doped polycrystalline silicon layers, grid line slurry is prevented from penetrating through the doped polycrystalline silicon layers and damaging a bottom tunneling oxide layer during sintering, and therefore the field passivation effect is guaranteed; the non-grid line area only comprises the tunneling layer and the first doped polycrystalline silicon layer, so that compared with the grid line area, the thickness is greatly reduced, the parasitic absorption of light on the back surface is reduced, and the photoelectric efficiency is improved.

The invention belongs to the technical field of perovskite solar cells, and discloses a perovskite solar cell based on an imidazolyl ionic liquid additive and a preparation method of the perovskite solar cell. The perovskite absorption layer comprises imidazolyl ionic liquid, the structural general formula of the imidazolyl ionic liquid is shown in the specification, R1 and R2 are independently H, C1-C18 alkyl, alkenyl or aryl, R3 is CHnY3-n, Y is at least one of H, F, Cl, Br and I, n is more than or equal to 0 and less than or equal to 3, and m is equal to 0 or 1. The ionic liquid is added to regulate and control the crystallization process of the perovskite layer, and the photoelectric efficiency and the stability are improved. Under the condition of no interface passivation, the power conversion efficiency of the MT and PIT improved perovskite solar device can reach 24.97% and 25.14%. At the room temperature of a nitrogen environment, the initial efficiency of a PIT improved device is far higher than that of a device without an additive, wherein the initial efficiency of the PIT improved device is 97% or above within 2000h.

The application discloses a solar cell, a photovoltaic module and a manufacturing method of the solar cell, and relates to the technical field of solar cells, and aims to solve the problem of how to make the photoelectric efficiency of the solar cell reach a high level. The solar cell comprises a semiconductor substrate, a first doped layer and a second doped layer. The semiconductor substrate comprises opposite first and second surfaces, and the first surface comprises a first electrode area and a first non-electrode area. The surface of the first electrode area has a first texture structure, the first non-electrode area has a second texture structure and a third texture structure, the second texture structure is located in the middle region of the semiconductor substrate, the third texture structure is located in the edge region of the semiconductor substrate, the width of the edge region is less than or equal to 3 mm, and the fluctuation degree of the third texture structure is less than the fluctuation degree of the second texture structure. The first doped layer is arranged in the first electrode area, the second doped layer is arranged in the first non-electrode area, and the doping concentration of the first doped layer is greater than the doping concentration of the second doped layer.

A method for synergistically improving the photoelectric efficiency and stability of PSCs based on phosphomolybdic acid@gamma-cyclodextrin host-guest composite material belongs to the technical field of perovskite solar cells. The present application solves the problems of poor photoelectric efficiency and stability of existing PSCs, and solves the problems of poor compatibility of existing POMs with perovskite system and easy aggregation of POMs in the process of perovskite defect passivation, which leads to low utilization rate of passivation sites. Preparation: I, PMo 12 @gamma-CD host-guest composite material; II, preparation of PMo 12 @gamma-CD modified perovskite precursor solution; III, preparation of PSCs. The present application is used for synergistically improving the photoelectric efficiency and stability of PSCs based on phosphomolybdic acid@gamma-cyclodextrin host-guest composite material.

The invention belongs to the technical field of photovoltaic industry, and particularly relates to a preparation method and application of an environment-friendly composite material for improving photovoltaic photoelectric efficiency. The combined material is composed of an agent A used for improving the light absorption efficiency of the photovoltaic module and an agent B used for improving the electron transmission efficiency of the photovoltaic module. The agent A is prepared by grinding titanium oxide, sodium sulfate, sodium pyrophosphate and a rare earth compound, introducing nitrogen under 2500 DEG C plasma heating for nitridation treatment to form nitrogen-doped crystal lattices, dissolving the nitrogen-doped crystal lattices in deionized water, and grinding the nitrogen-doped crystal lattices; the agent B is graphite, polyethylene glycol, sodium sulfate, sodium pyrophosphate, rubidium-containing soluble ion salt and sulfuric acid, a graphite product is formed after ultrasonic mixing and oxidation, the graphite product is heated at the temperature of 1,300 DEG C under the ultra-vacuum condition smaller than or equal to 10 <-6 > Pa and then subjected to discharge treatment through an electric arc furnace at the temperature of 3500 DEG C to form a carbon atom recombination structure, and the carbon atom recombination structure is dissolved in isopropanol and ground. By utilizing the settings, the invention provides the environment-friendly composite material for improving the photovoltaic photoelectric efficiency as well as the preparation method and the application of the environment-friendly composite material.

The invention provides a perovskite cell and a preparation method thereof, and a photovoltaic module, the perovskite cell comprises a substrate layer, a conductive function layer, a middle anchoring layer, a hole transport layer, a perovskite absorption layer, an electron transport layer, a conductive layer and a metal electrode layer which are stacked in sequence, and the material of the middle anchoring layer comprises lanthanide series metal salt. According to the invention, a multi-coordination structure is realized by utilizing extranuclear multiple electrons of lanthanide series metal salt and a self-assembled monomolecular layer, so that the adhesive force and uniformity of self-assembled monomolecules are improved, interface defects are improved, and the photoelectric efficiency of a photovoltaic module is further improved.

The application discloses a kind of multi-functional group dynamic crosslinking polymer preparation methods for perovskite photovoltaic device, comprising: end hydroxyl polydimethylsiloxane, diselenoic acid, dopamine, 4-dimethylaminopyridine, condensing agent and solvent.By the above mode, the multi-functional group dynamic crosslinking polymer preparation method for perovskite photovoltaic device of the application greatly improves the mechanical properties and photoelectric efficiency of perovskite photovoltaic device, and the environmental stability of perovskite photovoltaic device is also improved, and has self-repairing function, effectively prolongs service life.

The application discloses a perovskite phase additive, a perovskite thin film, a solar cell and a preparation method, a battery assembly and a power utilization device thereof. The perovskite phase additive comprises a heterometallic substituted polyoxometalate. The perovskite thin film and the perovskite active layer of the solar cell are doped with the perovskite phase additive. The heterometallic substituted polyoxometalate utilizes adjustable energy levels, multi-site coordination and gradient redox activity, can realize the synergistic effect of defect passivation, crystallization regulation and stability improvement of the perovskite thin film, and thus improves the photoelectric efficiency and working stability of the device.

The utility model discloses a novel quartz glass photocatalytic microchannel reactor, and relates to the technical field of photocatalytic reactor equipment. The reactor comprises a box body, a lamp panel, an adjustable bracket, a photocatalytic reaction unit and a controller, the lamp panel, the adjustable bracket and the photocatalytic reaction unit are arranged in the box body, and the controller is respectively connected with the lamp panel and the photocatalytic reaction unit; the photocatalytic reaction unit comprises a cover plate, a quartz glass plate, a reaction plate and a heat exchange plate which are arranged from top to bottom, a reaction channel is formed in the side, close to the quartz glass plate, of the reaction plate, and a heat exchange short circuit prevention channel is formed in the side, close to the heat exchange plate, of the reaction plate. According to the utility model, the quartz glass is used for transmitting light with almost all wavelengths, so that the attenuation of light intensity is greatly reduced, the photoelectric efficiency is greatly reduced under the same working condition, the cost is saved, and the working conditions of most photocatalytic reactions can be met.

The utility model discloses an efficiency detection device of a photovoltaic cell, the efficiency detection device of the photovoltaic cell comprises a crystalline silicon standard sheet, a processing unit and a display unit, and the crystalline silicon standard sheet comprises a crystalline silicon optical signal input end and a crystalline silicon electric signal output end. The processing unit comprises a crystalline silicon electric signal input end, a photovoltaic area input end, a positive electrode signal input end, a negative electrode signal input end and a photoelectric efficiency output end; the crystalline silicon electric signal input end is electrically connected with the crystalline silicon electric signal output end, the photovoltaic area input end is electrically connected with the photovoltaic area providing end of the efficiency detection device, the positive electrode signal input end is electrically connected with the positive electrode signal detection end of the efficiency detection device, and the negative electrode signal input end is electrically connected with the negative electrode signal detection end of the efficiency detection device. The display unit comprises a display input end, and the photoelectric efficiency output end is electrically connected with the display input end. The positive electrode signal detection end is electrically connected with the positive electrode of the to-be-detected photovoltaic cell, and the negative electrode signal detection end is electrically connected with the negative electrode of the to-be-detected photovoltaic cell.

The invention discloses an annular pump laser and a module sintering device and method thereof. According to the annular pump laser module sintering device, the sintering device comprises a sintering base and a locking and positioning device; wherein the sintering base comprises a bearing part used for bearing a heat sink of the annular pump laser and a locking matching part extending upwards from the bearing surface of the bearing part, and the locking matching part penetrates through a center hole of the heat sink; one end of the locking and positioning device is matched and positioned with the locking and matching part, and the other end of the locking and positioning device presses the to-be-welded part on the laser module welding part on the circumferential surface of the central hole of the heat sink. The sintering device is arranged, the corresponding to-be-welded part is pressed and fixed to the heat sink of the sintering base through the locking device, and then the whole sintering device is put into the sintering furnace to be sintered and formed, so that the consistency and stability of the performance of all laser bar beams in the sintering device are achieved; and meanwhile, the photoelectric efficiency and the reliability of the annular pump laser are improved.

The invention discloses a laminated cell, a preparation method thereof and a photovoltaic module, and belongs to the field of photovoltaic technology. The laminated cell comprises a perovskite cell, a tunneling composite layer and a TOPCon cell, the perovskite cell comprises a hole transport layer; the tunneling composite layer is a composite layer of a MoS2-2 layer and an HfS2 layer; and the MoS2-2 layer is arranged between the hole transport layer and the HfS2 layer composite layer. A novel two-dimensional material composite tunneling composite layer MoS2 / HfS2 heterojunction is introduced to replace a traditional metal oxide tunneling composite layer, the light transmittance is larger than 95%, the resistance loss is smaller than 0.5%, and the quantum tunneling probability is larger than 90%, so that efficient transmission of carriers between different cell layers is effectively promoted, effective separation and collection of charges are achieved, and the quantum tunneling efficiency is improved. And the photoelectric efficiency of the perovskite-TOPCon laminated cell is obviously improved.

Provided in the present invention are a rear-surface-passivated CIGS single-junction cell and interconnected cells thereof and a preparation method therefor, and a CIGS / PVK double-junction tandem cell and a preparation method therefor. The CIGS single-junction cell comprises a substrate, and a back electrode, an absorption layer, a buffer layer, a high barrier layer, a front electrode and grid lines which are sequentially formed, wherein a discontinuous passivation layer is deposited between the back electrode and the absorption layer. The preparation method for the CIGS single-junction cell comprises: depositing a back electrode on a substrate; forming a suspension from nanoparticles, coating the suspension onto the back electrode to form a wet film, and conducting annealing, so as to form a passivation layer; and sequentially depositing an absorption layer, a buffer layer, a high barrier layer, a front electrode layer and grid lines on the passivation layer. The CIGS / PVK double-junction tandem cell comprises a bottom CIGS single-junction cell and a top perovskite cell, the two forming an integral body by means of the interconnection of two or four internal ends thereof. Further provided in the present invention is a passivation method for interconnected CIGS single-junction cells. P1, P2 and P3 scribe lines are arranged inside the CIGS single-junction cell. The rear-surface-passivated cell provided by the present invention reduces rear surface recombination and improves photoelectric efficiency.

The present application discloses an infrared LED epitaxial structure and a manufacturing method thereof. The infrared LED epitaxial structure comprises, stacked from bottom to top, a substrate, a first semiconductor layer, a first space layer, a multi-quantum well layer, a second space layer, and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer have opposite doping types. The first space layer and the second space layer are superlattice structures. The highest Al composition in each layer of the first space layer is lower than the highest Al composition in each layer of the second space layer, so that the first space layer and the second space layer form an asymmetric structure. The asymmetric space layer in the present application can increase the height of the effective barrier, suppress the overflow of carriers, and enhance the quantum confinement effect on carriers. Moreover, due to the tunneling characteristics of the superlattice, the mobility of carriers is improved. In addition, the asymmetric design can effectively reduce the overflow of carriers from the multi-quantum well, improve the light field distribution, and enhance the photoelectric efficiency and reliability of the infrared light-emitting diode.

The application discloses a solar cell, a photovoltaic module and a manufacturing method of the solar cell, and relates to the technical field of solar cells, and aims to solve the problem of how to make the photoelectric efficiency of the solar cell reach a high level. The solar cell comprises a semiconductor substrate, a first doped layer and a second doped layer. The semiconductor substrate comprises opposite first and second surfaces; the first surface comprises a first electrode area and a first non-electrode area; the surface of the first electrode area has a first texture structure, and the first non-electrode area has a second texture structure; the second surface comprises a second electrode area and a second non-electrode area; the second non-electrode area has a third texture structure, and the size consistency of the second texture structure is greater than that of the third texture structure; the first doped layer is arranged on the first electrode area; the second doped layer is arranged on the first non-electrode area; and the doping concentration of the first doped layer is greater than that of the second doped layer.

The invention discloses a preparation method and application of a high-efficiency cesium-based perovskite solution and a thin film, and belongs to the field of photoelectric devices. A cesium salt dissolving technology is invented, that is, cesium salt and metal halide powder are dissolved through oxidized NMP and a small amount of DMSO additive, and the problems that a cesium-based perovskite precursor is poor in solubility, complex in preparation and the like are solved. Meanwhile, the invention further discloses a technology for preparing the high-quality cesium-based perovskite thin film, namely a novel two-step mutual diffusion technology. The method comprises the following steps: firstly spin-coating a mixture of excessive metal halide and organic halide on a hole transport layer, then vertically dropwise adding an organic halide solution, and heating and annealing to form a compact high-quality thin film. Compared with the prior art, the crystallization time is prolonged, toxic chlorobenzene is removed, and the battery consistency is improved. The cesium-based inverted pure iodine perovskite solar cell prepared on the basis of the method has the photoelectric efficiency of 17.85%, and a new path is provided for commercialization of perovskite cells.

The invention provides a semiconductor laser module and a preparation method thereof. The semiconductor laser module comprises a plurality of rows of chips and an optical shaping assembly. The optical shaping assembly comprises a space beam combining part, and the space beam combining part comprises a plurality of transmission beam combining parts. Each transmission beam combining part is used for forming light beams emitted by the corresponding row of chips into transmission light beams, so that the coupling loss is reduced, and the photoelectric efficiency is improved; the semiconductor laser module can be used for combining multiple rows of light beams, and the manufacturing cost of the transmission beam combining component is low.

The invention relates to radiation refrigeration glass based on industrial by-product fly ash and a preparation and optimization method thereof. The glass material with high sunlight reflectivity and high far infrared radiance is prepared by purifying and processing industrial by-product fly ash, using SiO2 and Al2O3 which are rich in fly ash as glass substrates and doping functional oxides such as CaO, MgO, TiO2 and ZrO2. A neural network fitting technology is innovatively adopted to establish a nonlinear mapping relationship between the glass component proportion and optical / thermal / mechanical properties, the component proportion is globally optimized in combination with a genetic algorithm or a particle swarm optimization algorithm, and the balance of high performance and low cost is realized through data driving. An optimization result is verified by utilizing tools such as MATLAB / ANSYS and the like, and indexes such as light transmittance, infrared radiance and mechanical strength are tested by experiments. The glass can be applied to the back face of a photovoltaic panel, the working temperature is reduced through efficient heat dissipation, the photoelectric efficiency is improved, and meanwhile high-added-value resource utilization of the fly ash is achieved. The material is suitable for the fields of photovoltaic power generation and building energy-saving window / wall materials, and has the advantages of environmental protection and economy.

The invention discloses a photomultiplier photocathode integrated manufacturing system and method, and belongs to the technical field of photoelectric detection. The device comprises a precision processing cavity design, configuration of a composite three-stage vacuum pump set system with precise monitoring and control, a cleaning and degassing unit integrating plasma cleaning, high-temperature baking and an electronic brushing module, a dynamic evaporation system with multi-parameter in-situ control, and a packaging unit with laser ranging matched with visual precision cooperative positioning. On the basis of the integrated system, the steps of photocathode substrate surface cleaning, chamber baking, alkali source degassing, electronic brushing, photocathode evaporation and packaging are sequentially executed. According to the invention, the quantum efficiency of the photocathode is greater than or equal to 30% and the surface photoelectric efficiency distribution deviation is less than or equal to 5% under the wavelength of 550nm by relying on a 10-9Pa-level ultrahigh vacuum environment and combining a dynamic intelligent model to iterate evaporation process parameters in real time, so that the problem that the service life of the photocathode is short is effectively solved, the sensitivity is doubled compared with that of a traditional device, the production efficiency and the cost are optimized, and leap-type improvement of the efficiency is realized.

The present application provides a solar cell and a preparation method therefor. The solar cell comprises a silicon substrate, a front electrode arranged on a front face of the silicon substrate, and a back electrode arranged on a back face of the silicon substrate. The back face of the silicon substrate comprises a grid line area and a non-grid line area. The back electrode is arranged in the grid line area. The grid line area is provided with a first passivated contact structure. A tunnel layer, at least one first doped polycrystalline silicon layer, at least one spacer layer, and a second doped polycrystalline silicon layer are sequentially stacked on the first passivated contact structure. The passivated contact structure of the solar cell of the present invention has different film layers and thicknesses in the grid line area and the non-grid line area. The grid line area is provided with a four-layer structure consisting of the tunnel layer, the first doped polycrystalline silicon layer, the spacer layer, and the second doped polycrystalline silicon layer, and the grid line area is large in thickness and is provided with two doped polycrystalline silicon layers, preventing a grid line slurry from penetrating through the doped polycrystalline silicon layer and damaging an underlying tunnel oxide layer during sintering, thereby ensuring a field passivation effect. The non-grid line area only comprises the tunnel layer and the first doped polycrystalline silicon layer, and is much thinner than the grid line area, thereby reducing parasitic absorption of backlight, and improving photoelectric efficiency.

The invention relates to the technical field of photovoltaic devices, in particular to a composite electrode, a flexible perovskite photovoltaic device thereof and a packaging method. According to the technical scheme, the composite electrode is of a multi-layer structure and sequentially comprises a stress buffering and interface bonding layer, a conductive grid layer and a self-repairing functional layer from bottom to top. A buffer interface with modulus gradient transition is constructed, a three-dimensional composite conductive network is formed by reducing graphene through a silver nanowire / carbon nanotube / chemical vapor deposition method, a self-repairing functional layer integrating a dynamic disulfide bond and microcapsule dual mechanism is combined with an atomic layer deposition inorganic layer and an organic buffer layer for composite packaging, and the three-dimensional composite conductive network and the self-repairing functional layer are formed. The key problems of mechanical mismatch between an electrode and a substrate in a flexible perovskite photovoltaic device, easy damage of a conductive network under bending and stability reduction caused by water and oxygen invasion are systematically solved, so that high photoelectric efficiency is ensured, and repeated bending resistance, damage self-repairing capability and long-term environmental stability of the device are remarkably improved.

In the present invention, light to be measured is output from a coherence-wavelength-swept light source, is split into signal light and reference light by a first optical coupler which are then recombined by a second optical coupler and then output as a first interference signal, a second interference signal, and a third interference signal having phases different by 120°, and each of the signals is detected by a photodetector. A correction matrix in which factors that vary over time is calculated, the factors relating to amplitudes due to the first optical coupler and the second optical coupler, the quantum efficiency of the photodetector, and phase due to the second optical coupler. The phase difference between the signal light and the reference light is calculated by using the first interference signal, the second interference signal, the third interference signal, and the correction matrix. The spectral width of light is calculated by using the phase difference, and the coherence-distance of light is calculated by using the spectral width.

The invention provides a heterojunction solar cell, and belongs to the technical field of solar cells. The heterojunction solar cell comprises an N-type silicon wafer which is provided with a first surface and a second surface which are oppositely arranged; a first intrinsic hydrogenated amorphous silicon oxygen film, a P-type doped hydrogenated amorphous silicon oxygen film, a first TCO film and a first electrode are sequentially arranged on the first surface of the N-type silicon wafer in a stacked mode. A second intrinsic hydrogenated amorphous silicon oxygen film, an N-type doped hydrogenated amorphous silicon film, a second TCO film and a second electrode are sequentially arranged on the second surface of the N-type silicon wafer in a stacked mode, the chemical formula of the first intrinsic hydrogenated amorphous silicon oxygen film and the chemical formula of the second intrinsic hydrogenated amorphous silicon oxygen film are a-SiOx: H, and the oxygen content x ranges from 0.5 to 1.5. The band gap width of the thin film is relatively wider, the adjustable range is large, sunlight of different wavelengths can be absorbed more effectively, the passivation effect is better, the defect state density of the silicon surface and interface is reduced, the carrier recombination rate is reduced, and the photoelectric efficiency of a solar cell is improved.

The invention provides a GaAs / perovskite laminated solar cell based on pi-pi interaction and a preparation method of the GaAs / perovskite laminated solar cell. The laminated solar cell is composed of a GaAs sub-cell and a perovskite sub-cell. A CuPc surface functional layer is prepared on the surface of the CNT to form a CuPc / CNT layer, and the CuPc / CNT serves as a hole transport layer of the GaAs sub-cell at the bottom and a hole transport layer of the perovskite sub-cell at the top and also serves as a middle interconnection layer for connecting the upper sub-cell and the lower sub-cell; the process that a complex tunnel junction or a TCO layer needs to be additionally prepared in a traditional laminated cell is avoided, the device structure is simplified, and the manufacturing cost is reduced. The CuPc and the CNT have strong pi-pi interaction and good energy level matching, electrons are induced to be transferred from the CNT to the CuPc, p-type doping of the CNT and the conductivity of the thin film are remarkably enhanced, the charge transmission capacity in the vertical direction is effectively improved, and voltage loss caused by energy level mismatching is reduced to the maximum extent; the photoelectric efficiency is improved.

A solar reflection full-band hyperspectral imaging detection system comprises a telescope light collection system, a field-of-view separation assembly, a spectrometer assembly, and a detector assembly. The field-of-view separation assembly comprises an integrated trisection field-of-view separator, a first field-of-view assembly, a second field-of-view assembly, and a third field-of-view assembly; the spectrometer assembly comprises a first spectrometer, a second spectrometer and a third spectrometer; and the detector assembly comprises a CMOS (Complementary Metal Oxide Semiconductor) detector, an InGaAs detector, and an HgCdTe detector. The present invention adopts the three-band spectrometer, and the spectrum aliasing, high photoelectric efficiency in the middle and low photoelectric efficiency at two ends, limited detection dynamic range, severe Etalon interference effect and the like of a two-band spectrometer with a traditional solar reflection full-band hyperspectral detection system are solved.

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.