46 results about "Photoelectric efficiency" patented technology

The invention provides a perovskite absorption layer and a preparation method thereof, and a polyion liquid-ion liquid synergistically modified perovskite solar cell, belongs to the technical field of solar cells, and aims to solve the problems of bulk phase and interface defects of the perovskite solar cell. The preparation method of the perovskite absorption layer comprises the following steps: dispersing and dissolving a perovskite precursor, polyionic liquid and ionic liquid into an organic solvent to prepare a perovskite precursor solution; and spin-coating the perovskite precursor solution to form a film, and annealing to obtain the perovskite absorption layer. According to the invention, polyionic liquid (PIL) and ionic liquid (IL) are preferably and synergistically added into a single-junction or multi-junction photovoltaic cell containing perovskite junctions, so that dual passivation of bulk phase and interface defects is realized; and the film uniformity and the photoelectric efficiency are improved.

The application discloses a solar cell, a photovoltaic module and a manufacturing method of the solar cell, and relates to the technical field of solar cells, and aims to solve the problem of how to make the photoelectric efficiency of the solar cell reach a high level. The solar cell comprises a semiconductor substrate, a first doped layer and a second doped layer. The semiconductor substrate comprises opposite first and second surfaces, and the first surface comprises a first electrode area and a first non-electrode area. The surface of the first electrode area has a first texture structure, the first non-electrode area has a second texture structure and a third texture structure, the second texture structure is located in the middle region of the semiconductor substrate, the third texture structure is located in the edge region of the semiconductor substrate, the width of the edge region is less than or equal to 3 mm, and the fluctuation degree of the third texture structure is less than the fluctuation degree of the second texture structure. The first doped layer is arranged in the first electrode area, the second doped layer is arranged in the first non-electrode area, and the doping concentration of the first doped layer is greater than the doping concentration of the second doped layer.

A method for synergistically improving the photoelectric efficiency and stability of PSCs based on phosphomolybdic acid@gamma-cyclodextrin host-guest composite material belongs to the technical field of perovskite solar cells. The present application solves the problems of poor photoelectric efficiency and stability of existing PSCs, and solves the problems of poor compatibility of existing POMs with perovskite system and easy aggregation of POMs in the process of perovskite defect passivation, which leads to low utilization rate of passivation sites. Preparation: I, PMo 12 @gamma-CD host-guest composite material; II, preparation of PMo 12 @gamma-CD modified perovskite precursor solution; III, preparation of PSCs. The present application is used for synergistically improving the photoelectric efficiency and stability of PSCs based on phosphomolybdic acid@gamma-cyclodextrin host-guest composite material.

The invention belongs to the technical field of photovoltaic industry, and particularly relates to a preparation method and application of an environment-friendly composite material for improving photovoltaic photoelectric efficiency. The combined material is composed of an agent A used for improving the light absorption efficiency of the photovoltaic module and an agent B used for improving the electron transmission efficiency of the photovoltaic module. The agent A is prepared by grinding titanium oxide, sodium sulfate, sodium pyrophosphate and a rare earth compound, introducing nitrogen under 2500 DEG C plasma heating for nitridation treatment to form nitrogen-doped crystal lattices, dissolving the nitrogen-doped crystal lattices in deionized water, and grinding the nitrogen-doped crystal lattices; the agent B is graphite, polyethylene glycol, sodium sulfate, sodium pyrophosphate, rubidium-containing soluble ion salt and sulfuric acid, a graphite product is formed after ultrasonic mixing and oxidation, the graphite product is heated at the temperature of 1,300 DEG C under the ultra-vacuum condition smaller than or equal to 10 <-6 > Pa and then subjected to discharge treatment through an electric arc furnace at the temperature of 3500 DEG C to form a carbon atom recombination structure, and the carbon atom recombination structure is dissolved in isopropanol and ground. By utilizing the settings, the invention provides the environment-friendly composite material for improving the photovoltaic photoelectric efficiency as well as the preparation method and the application of the environment-friendly composite material.

The invention provides a perovskite cell and a preparation method thereof, and a photovoltaic module, the perovskite cell comprises a substrate layer, a conductive function layer, a middle anchoring layer, a hole transport layer, a perovskite absorption layer, an electron transport layer, a conductive layer and a metal electrode layer which are stacked in sequence, and the material of the middle anchoring layer comprises lanthanide series metal salt. According to the invention, a multi-coordination structure is realized by utilizing extranuclear multiple electrons of lanthanide series metal salt and a self-assembled monomolecular layer, so that the adhesive force and uniformity of self-assembled monomolecules are improved, interface defects are improved, and the photoelectric efficiency of a photovoltaic module is further improved.

The application discloses a kind of multi-functional group dynamic crosslinking polymer preparation methods for perovskite photovoltaic device, comprising: end hydroxyl polydimethylsiloxane, diselenoic acid, dopamine, 4-dimethylaminopyridine, condensing agent and solvent.By the above mode, the multi-functional group dynamic crosslinking polymer preparation method for perovskite photovoltaic device of the application greatly improves the mechanical properties and photoelectric efficiency of perovskite photovoltaic device, and the environmental stability of perovskite photovoltaic device is also improved, and has self-repairing function, effectively prolongs service life.

The invention discloses an annular pump laser and a module sintering device and method thereof. According to the annular pump laser module sintering device, the sintering device comprises a sintering base and a locking and positioning device; wherein the sintering base comprises a bearing part used for bearing a heat sink of the annular pump laser and a locking matching part extending upwards from the bearing surface of the bearing part, and the locking matching part penetrates through a center hole of the heat sink; one end of the locking and positioning device is matched and positioned with the locking and matching part, and the other end of the locking and positioning device presses the to-be-welded part on the laser module welding part on the circumferential surface of the central hole of the heat sink. The sintering device is arranged, the corresponding to-be-welded part is pressed and fixed to the heat sink of the sintering base through the locking device, and then the whole sintering device is put into the sintering furnace to be sintered and formed, so that the consistency and stability of the performance of all laser bar beams in the sintering device are achieved; and meanwhile, the photoelectric efficiency and the reliability of the annular pump laser are improved.

The invention discloses a laminated cell, a preparation method thereof and a photovoltaic module, and belongs to the field of photovoltaic technology. The laminated cell comprises a perovskite cell, a tunneling composite layer and a TOPCon cell, the perovskite cell comprises a hole transport layer; the tunneling composite layer is a composite layer of a MoS2-2 layer and an HfS2 layer; and the MoS2-2 layer is arranged between the hole transport layer and the HfS2 layer composite layer. A novel two-dimensional material composite tunneling composite layer MoS2 / HfS2 heterojunction is introduced to replace a traditional metal oxide tunneling composite layer, the light transmittance is larger than 95%, the resistance loss is smaller than 0.5%, and the quantum tunneling probability is larger than 90%, so that efficient transmission of carriers between different cell layers is effectively promoted, effective separation and collection of charges are achieved, and the quantum tunneling efficiency is improved. And the photoelectric efficiency of the perovskite-TOPCon laminated cell is obviously improved.

Provided in the present invention are a rear-surface-passivated CIGS single-junction cell and interconnected cells thereof and a preparation method therefor, and a CIGS / PVK double-junction tandem cell and a preparation method therefor. The CIGS single-junction cell comprises a substrate, and a back electrode, an absorption layer, a buffer layer, a high barrier layer, a front electrode and grid lines which are sequentially formed, wherein a discontinuous passivation layer is deposited between the back electrode and the absorption layer. The preparation method for the CIGS single-junction cell comprises: depositing a back electrode on a substrate; forming a suspension from nanoparticles, coating the suspension onto the back electrode to form a wet film, and conducting annealing, so as to form a passivation layer; and sequentially depositing an absorption layer, a buffer layer, a high barrier layer, a front electrode layer and grid lines on the passivation layer. The CIGS / PVK double-junction tandem cell comprises a bottom CIGS single-junction cell and a top perovskite cell, the two forming an integral body by means of the interconnection of two or four internal ends thereof. Further provided in the present invention is a passivation method for interconnected CIGS single-junction cells. P1, P2 and P3 scribe lines are arranged inside the CIGS single-junction cell. The rear-surface-passivated cell provided by the present invention reduces rear surface recombination and improves photoelectric efficiency.

The application discloses a solar cell, a photovoltaic module and a manufacturing method of the solar cell, and relates to the technical field of solar cells, and aims to solve the problem of how to make the photoelectric efficiency of the solar cell reach a high level. The solar cell comprises a semiconductor substrate, a first doped layer and a second doped layer. The semiconductor substrate comprises opposite first and second surfaces; the first surface comprises a first electrode area and a first non-electrode area; the surface of the first electrode area has a first texture structure, and the first non-electrode area has a second texture structure; the second surface comprises a second electrode area and a second non-electrode area; the second non-electrode area has a third texture structure, and the size consistency of the second texture structure is greater than that of the third texture structure; the first doped layer is arranged on the first electrode area; the second doped layer is arranged on the first non-electrode area; and the doping concentration of the first doped layer is greater than that of the second doped layer.

The invention relates to radiation refrigeration glass based on industrial by-product fly ash and a preparation and optimization method thereof. The glass material with high sunlight reflectivity and high far infrared radiance is prepared by purifying and processing industrial by-product fly ash, using SiO2 and Al2O3 which are rich in fly ash as glass substrates and doping functional oxides such as CaO, MgO, TiO2 and ZrO2. A neural network fitting technology is innovatively adopted to establish a nonlinear mapping relationship between the glass component proportion and optical / thermal / mechanical properties, the component proportion is globally optimized in combination with a genetic algorithm or a particle swarm optimization algorithm, and the balance of high performance and low cost is realized through data driving. An optimization result is verified by utilizing tools such as MATLAB / ANSYS and the like, and indexes such as light transmittance, infrared radiance and mechanical strength are tested by experiments. The glass can be applied to the back face of a photovoltaic panel, the working temperature is reduced through efficient heat dissipation, the photoelectric efficiency is improved, and meanwhile high-added-value resource utilization of the fly ash is achieved. The material is suitable for the fields of photovoltaic power generation and building energy-saving window / wall materials, and has the advantages of environmental protection and economy.

The invention discloses a photomultiplier photocathode integrated manufacturing system and method, and belongs to the technical field of photoelectric detection. The device comprises a precision processing cavity design, configuration of a composite three-stage vacuum pump set system with precise monitoring and control, a cleaning and degassing unit integrating plasma cleaning, high-temperature baking and an electronic brushing module, a dynamic evaporation system with multi-parameter in-situ control, and a packaging unit with laser ranging matched with visual precision cooperative positioning. On the basis of the integrated system, the steps of photocathode substrate surface cleaning, chamber baking, alkali source degassing, electronic brushing, photocathode evaporation and packaging are sequentially executed. According to the invention, the quantum efficiency of the photocathode is greater than or equal to 30% and the surface photoelectric efficiency distribution deviation is less than or equal to 5% under the wavelength of 550nm by relying on a 10-9Pa-level ultrahigh vacuum environment and combining a dynamic intelligent model to iterate evaporation process parameters in real time, so that the problem that the service life of the photocathode is short is effectively solved, the sensitivity is doubled compared with that of a traditional device, the production efficiency and the cost are optimized, and leap-type improvement of the efficiency is realized.

The invention relates to the technical field of photovoltaic devices, in particular to a composite electrode, a flexible perovskite photovoltaic device thereof and a packaging method. According to the technical scheme, the composite electrode is of a multi-layer structure and sequentially comprises a stress buffering and interface bonding layer, a conductive grid layer and a self-repairing functional layer from bottom to top. A buffer interface with modulus gradient transition is constructed, a three-dimensional composite conductive network is formed by reducing graphene through a silver nanowire / carbon nanotube / chemical vapor deposition method, a self-repairing functional layer integrating a dynamic disulfide bond and microcapsule dual mechanism is combined with an atomic layer deposition inorganic layer and an organic buffer layer for composite packaging, and the three-dimensional composite conductive network and the self-repairing functional layer are formed. The key problems of mechanical mismatch between an electrode and a substrate in a flexible perovskite photovoltaic device, easy damage of a conductive network under bending and stability reduction caused by water and oxygen invasion are systematically solved, so that high photoelectric efficiency is ensured, and repeated bending resistance, damage self-repairing capability and long-term environmental stability of the device are remarkably improved.

In the present invention, light to be measured is output from a coherence-wavelength-swept light source, is split into signal light and reference light by a first optical coupler which are then recombined by a second optical coupler and then output as a first interference signal, a second interference signal, and a third interference signal having phases different by 120°, and each of the signals is detected by a photodetector. A correction matrix in which factors that vary over time is calculated, the factors relating to amplitudes due to the first optical coupler and the second optical coupler, the quantum efficiency of the photodetector, and phase due to the second optical coupler. The phase difference between the signal light and the reference light is calculated by using the first interference signal, the second interference signal, the third interference signal, and the correction matrix. The spectral width of light is calculated by using the phase difference, and the coherence-distance of light is calculated by using the spectral width.

The invention provides a heterojunction solar cell, and belongs to the technical field of solar cells. The heterojunction solar cell comprises an N-type silicon wafer which is provided with a first surface and a second surface which are oppositely arranged; a first intrinsic hydrogenated amorphous silicon oxygen film, a P-type doped hydrogenated amorphous silicon oxygen film, a first TCO film and a first electrode are sequentially arranged on the first surface of the N-type silicon wafer in a stacked mode. A second intrinsic hydrogenated amorphous silicon oxygen film, an N-type doped hydrogenated amorphous silicon film, a second TCO film and a second electrode are sequentially arranged on the second surface of the N-type silicon wafer in a stacked mode, the chemical formula of the first intrinsic hydrogenated amorphous silicon oxygen film and the chemical formula of the second intrinsic hydrogenated amorphous silicon oxygen film are a-SiOx: H, and the oxygen content x ranges from 0.5 to 1.5. The band gap width of the thin film is relatively wider, the adjustable range is large, sunlight of different wavelengths can be absorbed more effectively, the passivation effect is better, the defect state density of the silicon surface and interface is reduced, the carrier recombination rate is reduced, and the photoelectric efficiency of a solar cell is improved.

The invention provides a GaAs / perovskite laminated solar cell based on pi-pi interaction and a preparation method of the GaAs / perovskite laminated solar cell. The laminated solar cell is composed of a GaAs sub-cell and a perovskite sub-cell. A CuPc surface functional layer is prepared on the surface of the CNT to form a CuPc / CNT layer, and the CuPc / CNT serves as a hole transport layer of the GaAs sub-cell at the bottom and a hole transport layer of the perovskite sub-cell at the top and also serves as a middle interconnection layer for connecting the upper sub-cell and the lower sub-cell; the process that a complex tunnel junction or a TCO layer needs to be additionally prepared in a traditional laminated cell is avoided, the device structure is simplified, and the manufacturing cost is reduced. The CuPc and the CNT have strong pi-pi interaction and good energy level matching, electrons are induced to be transferred from the CNT to the CuPc, p-type doping of the CNT and the conductivity of the thin film are remarkably enhanced, the charge transmission capacity in the vertical direction is effectively improved, and voltage loss caused by energy level mismatching is reduced to the maximum extent; the photoelectric efficiency is improved.

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

The invention relates to the photovoltaic field, and discloses a solar cell and a manufacturing method thereof, and a photovoltaic module, the solar cell comprises a semiconductor substrate, the semiconductor substrate comprises a first surface and a second surface which are oppositely arranged, and a plurality of side surfaces connected with the first surface and the second surface; tower footing structures are distributed on at least one side surface, each tower footing structure comprises a first tower footing structure recessed towards the interior of the semiconductor substrate and a second tower footing structure protruding towards the exterior of the semiconductor substrate, each first tower footing structure is a polygonal structure in a regular shape, and each second tower footing structure is a polygonal structure in an irregular shape; the ratio of the area of all the first tower footing structures to the area of the side surface is larger than the ratio of the area of all the second tower footing structures to the area of the side surface. The side surface with the tower footing structure is an uneven surface, so that the reflection and refraction times of light can be increased, the light absorption on the side surface of the semiconductor substrate is increased, the photoelectric efficiency of the solar cell can be improved, and the photoelectric performance is improved.

The oxygen-vacancy-rich Bi / BiOCl photocatalytic material with the crystal face heterojunction and excellent photocatalytic performance is prepared through a simple hydrolysis method and a simple technology of ultraviolet irradiation treatment, the preparation method has the advantages of being simple in technology, safe, low in energy consumption and the like, batch preparation can be achieved, and the preparation technology is stable. The preparation method comprises the following steps: firstly, constructing a crystal face heterojunction by utilizing ethylene glycol polyhydroxy to assist in regulating and controlling the crystal face heterojunction effect, then skillfully utilizing the synergistic effect of generation of metal Bi and oxygen vacancy accumulation caused by BiOCl photocorrosion to successfully prepare the oxygen vacancy-enriched Bi / BiOCl photocatalytic material with a heterostructure, and remarkably promoting light absorption and light response by virtue of the synergistic effect of the three components. The composite efficiency of photon-generated carriers and the intrinsic impedance of the material are reduced, and the photoelectrocatalytic performance of the material is remarkably enhanced. The oxygen-vacancy-rich Bi / BiOCl photocatalytic material with the crystal face heterojunction, which is prepared by a preferable preparation process, can realize 0.05 to 0.10 percent of water decomposition bias voltage photoelectric efficiency and 10 to 15 percent of monochromatic light electro-conversion efficiency.

This invention relates to a heterocyclic compound, a hole transport material, a photovoltaic device, and a method for preparing the same, belonging to the field of new materials. The structural formula of the heterocyclic compound is: [Formula omitted for brevity], where R1 is selected from -C[…]. n H 2n+1 (0≤n≤3), one of —F, —Cl, —Br, —I; R2 is selected from —C n H 2n+1 -COOH (0≤n≤5), —C n H 2n+1 -SO3H (0≤n≤5), —C n H 2n+1 -PO3H2 (0≤n≤5), —C n H 2n+1 One of -NH2 (0≤n≤5); R3 is selected from -C n H 2n+1 (0≤n≤3), one of —F, —Cl, —Br, —I; R1 and R3 substituted at any substituted position in the cyclopentadiene. Using this heterocyclic compound as a hole transport material to prepare photovoltaic devices, the photoelectric efficiency and stability of the resulting photovoltaic devices were effectively improved.

The invention discloses a battery, a preparation method of the battery, a photovoltaic module and a preparation method of the photovoltaic module, and the preparation method of the battery, and the preparation method of the battery comprises the following steps: providing a substrate which comprises a front surface and a back surface; a first groove is prepared, and a groove is formed in the front face of the substrate towards the interior of the substrate to form the first groove corresponding to the front face grid electrode pattern; a mask layer is printed, wherein the mask layer is printed in the area, except the first groove, of the front face of the substrate; preparing a back electrode, and printing a back grid line on the back of the substrate to form the back electrode; and preparing a front electrode, laying a silver electrode at the bottom of the first groove, then filling the first groove with a conductive material, enabling at least part of the conductive material to protrude out of the front surface of the substrate to form a front protrusion, and solidifying the conductive material to form the front electrode. According to the preparation method, the process is simple, and the obtained battery is high in photoelectric efficiency and reliable in structure.

Measuring the coherence distance of a coherence light source operating in a very high frequency band. [Solution] The light to be measured is output from a coherence wavelength-swept light source, separated into signal light and reference light by a first optical coupler, and combined by a second optical coupler. These are then output as a first interference signal, a second interference signal, and a third interference signal, each with a phase difference of 120°. Each of these is detected by a photodetector. A correction matrix is ​​calculated in which factors related to the amplitude of the first and second optical couplers, the photoelectric efficiency of the photodetector, and the phase of the second optical coupler change over time. The phase difference between the signal light and the reference light is calculated using the first, second, and third interference signals and the correction matrix. The spectral width of the light is calculated using the phase difference, and the coherence distance of the light is calculated using the spectral width.

The invention discloses a Carnot battery energy storage system coupled with a solar heat pump, which comprises a heat pump circulating unit, a heat storage unit and an organic Rankine cycle unit, the heat pump circulating unit comprises a solar heat collector and a photovoltaic and photo-thermal integrated device, and is used as a low-temperature heat source and a driving heat source of the heat pump circulating unit; the heat pump cycle unit is connected with the heat storage unit and used for storing heat energy in the heat storage unit, and the heat storage unit is connected with the organic Rankine cycle unit and used for converting the heat energy into electric energy. The device has the advantages that the structure is simple, full-spectrum utilization of solar energy is achieved, photoelectric efficiency is high, and energy supply and demand are matched in time and space. The invention further discloses an energy storage and power generation method of the Carnot battery energy storage system coupled with the solar heat pump.

The invention relates to the photovoltaic field, and discloses a solar cell and a manufacturing method thereof, and a photovoltaic module, the solar cell comprises a semiconductor substrate, the semiconductor substrate comprises a first surface and a second surface which are oppositely arranged, and a plurality of side edges which are connected with the first surface and the second surface in a surrounding manner; a first tower footing structure and a second tower footing structure which are recessed towards the interior of the semiconductor substrate are distributed on the surface of at least one side edge, and the second tower footing structure is formed by superposing partial areas of at least two first tower footing structures; on the surface of the side edge, the sum of the areas of the second tower footing structures is larger than the sum of the areas of the first tower footing structures. The two tower footing structures can increase the refraction and reflection times of light on the side surface, so that the photoelectric efficiency of the cell is improved. The sum of the areas of the second tower footing structures is larger than the sum of the areas of the first tower footing structures, diffuse reflection of light can be increased, and the photoelectric performance of the cell is further improved.

The application provides a semiconductor laser module and a preparation method thereof. The semiconductor laser module comprises a plurality of rows of chips and an optical shaping assembly. The optical shaping assembly comprises a spatial beam combining component, and the spatial beam combining component comprises a plurality of transmission beam combining components. Each transmission beam combining component is used for forming a transmission beam from the light beam emitted by the row of chips corresponding to the transmission beam combining component, so as to reduce the coupling loss and improve the photoelectric efficiency. The semiconductor laser module can be used for the beam combining of a plurality of rows of light beams, and the transmission beam combining component has a low manufacturing cost.

The invention provides a core-shell structure high-performance quantum dot material and a preparation method and application thereof, and belongs to the technical field of quantum dot materials. A NaHTe aqueous solution is added into a solution containing sodium citrate and cadmium salt, glutathione and a zinc precursor solution are added, a reaction is performed to prepare sodium citrate modified CdTe / CdS / ZnS quantum dots, the sodium citrate modified CdTe / CdS / ZnS quantum dots react with black phosphorus quantum dots, nitrogen-doped sulfur quantum dots and mercaptoacetic acid to prepare a compound, and then the compound is coated with a silicon dioxide layer to prepare the core-shell structure high-performance quantum dot material. The core-shell structure high-performance quantum dot material prepared by the invention has better photoelectric efficiency and high quantum efficiency, the service life is prolonged, the resistance of quantum dots to environments such as oxygen and moisture is improved, the retention rate of optical performance is increased, and the core-shell structure high-performance quantum dot material has a wide application prospect.

The invention provides a solar cell, a preparation method thereof and a photovoltaic module. The solar cell comprises a substrate, wherein a passivation layer, a first silicon nitride layer and a second silicon nitride layer are sequentially stacked on the surface of one side of the substrate; wherein silicon quantum dots are doped and distributed in the first silicon nitride layer. According to the invention, the silicon quantum dots with down-conversion capability are introduced into the first silicon nitride layer, and UVB is converted into visible light or UVA which can be efficiently utilized by the cell by utilizing the down-conversion characteristic of the silicon quantum dots, so that the loss of photoelectric efficiency is reduced while UVB protection is realized, the dependence on a special ultraviolet cut-off material is reduced, and the production cost is further reduced. Therefore, the first silicon nitride layer is used as a functional core layer to cooperate with the second silicon nitride layer, so that the long-term stability of the down-conversion performance of the first silicon nitride layer is protected, the down-conversion gain effect of the first silicon nitride layer is enhanced, the passivation effect on the substrate is enhanced, and the carrier recombination loss is reduced.

The invention discloses a PV / T and double-source heat pump coupled heat exchange system, and relates to the technical field of complementary coupling of solar energy and air energy. The system comprises a double-source heat pump unit, a solar heat supply unit, a user side heat supply unit and an electric control unit, and can realize cooperative operation of photovoltaic power generation, photo-thermal utilization and heat pump heating and refrigeration. The PV / T heat source and the air heat source can be switched to guarantee heating in winter, refrigeration and domestic hot water supply are taken into consideration in non-heating seasons, meanwhile, the PV / T heat collector is cooled in a targeted mode to improve the photoelectric efficiency, and electric energy generated by the PV / T heat collector is stored, connected to the internet or used by a user. The COP value of the heat pump and the power generation efficiency of the PV / T heat collector can be remarkably improved, and the overall conversion use efficiency of solar energy is improved.

The invention provides a miniature light-emitting semiconductor device and a preparation method thereof. The miniature light-emitting semiconductor device comprises a substrate, an epitaxial structure, a first dielectric layer, a metal layer and an electrode, the epitaxial structure comprises a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer which are sequentially located on the substrate from bottom to top; the first dielectric layer covers the side wall and the upper surface of the epitaxial structure; the metal layer covers part of the first dielectric layer; the electrodes comprise a first electrode, a second electrode and a third electrode, the first electrode is electrically connected with the first type semiconductor layer, the second electrode is electrically connected with the second type semiconductor layer, and the third electrode is electrically connected with the metal layer. Non-radiative recombination caused by side wall defects can be reduced, and the photoelectric efficiency of the miniature light-emitting semiconductor device is improved.

The application discloses a laminated battery and a preparation method and a photovoltaic module thereof, and belongs to the technical field of photovoltaics. The laminated battery comprises a perovskite battery, a tunneling composite layer and a TOPCon battery; the perovskite battery comprises a hole transport layer; the tunneling composite layer is a MoS2-2 layer and a HfS2 layer composite layer; and the MoS2-2 layer is arranged between the hole transport layer and the HfS2 layer composite layer. The application introduces a novel two-dimensional material composite tunneling composite layer MoS2 / HfS2 heterojunction to replace a conventional metal oxide tunneling composite layer, realizes a light transmittance > 95%, a resistance loss < 0.5%, a quantum tunneling probability > 90%, and thus effectively promotes the efficient transmission of carriers between different battery layers, realizes the effective separation and collection of charges, and significantly improves the photoelectric efficiency of the perovskite-TOPCon laminated battery.