98 results about "Photoelectric efficiency" patented technology

The invention relates to a P-type double-sided passivation selective contact TOPCon cell structure and a preparation method thereof, and belongs to the technical field of solar cells. According to the cell prepared by the invention, the short-circuit current and the photoelectric conversion photoelectric efficiency are improved, a polycrystalline silicon doping layer and a tunneling oxide layer in a non-metal contact region outside a front electrode position are removed through laser film opening, and a selective local contact structure is formed in a metal contact region at the electrode position; current parasitic absorption and contact recombination between metal and the surface of crystalline silicon are reduced; the PN junction is manufactured on the back face, front face light absorption is prevented from being affected, low-power laser is adopted to ensure that the back face PN junction is not damaged by the laser in a non-metal contact area outside the back face electrode position, and then back face current parasitic absorption is greatly reduced by etching and cleaning a back face tunneling oxide layer of the area.

The invention discloses a solar cell, a photovoltaic module and a manufacturing method of the solar cell, relates to the technical field of solar cells, and aims to solve the problem of how to enable the photoelectric efficiency of the solar cell to reach a relatively high level. The solar cell comprises a semiconductor substrate, a first doped layer and a second doped layer. The semiconductor substrate comprises a first surface and a second surface which are opposite; the first surface comprises a first electrode region and a first non-electrode region; the surface of the first electrode area is provided with a first texture structure, and the first non-electrode area is provided with a second texture structure; the second surface comprises a second electrode region and a second non-electrode region; the second non-electrode area is provided with a third texture structure, and the size consistency of the second texture structure is larger than that of the third texture structure; the first doping layer is arranged in the first electrode region; the second doped layer is arranged in the first non-electrode region; the doping concentration of the first doping layer is larger than that of the second doping layer.

The invention discloses a solar cell epitaxial structure with controlled epitaxial dislocation distribution, a solar cell and a manufacturing method of the solar cell. The solar cell epitaxial structure comprises a GaAs substrate, a GaAs nucleating layer, a GaInP corrosion barrier layer, a GaAs contact layer, a GaInP top cell, a first tunnel junction, a first gradient buffer layer, a GaInAs intermediate cell, a second tunnel junction, a lattice overshoot layer, a second gradient buffer layer, a GaInAs bottom cell and a GaInAs contact layer from bottom to top in sequence. Wherein the first gradual change buffer layer is an AlGaInAs lattice gradual change buffer layer, and in the first gradual change buffer layer, the In component is increased nonlinearly from an initial layer to a target gradual change layer; the second gradual change buffer layer is an AlGaInAs lattice gradual change buffer layer, and in the second gradual change buffer layer, the In component content of the previous layer of the target gradual change layer is higher than that of the target gradual change layer in the process that the In component is increased from the initial layer to the target gradual change layer in a non-linear mode; the In component content in the lattice overshoot layer is higher than the In component content in the initial layer of the second gradient buffer layer. And the photoelectric efficiency of the solar cell can be effectively improved.

The invention provides a perovskite absorption layer and a preparation method thereof, and a polyion liquid-ion liquid synergistically modified perovskite solar cell, belongs to the technical field of solar cells, and aims to solve the problems of bulk phase and interface defects of the perovskite solar cell. The preparation method of the perovskite absorption layer comprises the following steps: dispersing and dissolving a perovskite precursor, polyionic liquid and ionic liquid into an organic solvent to prepare a perovskite precursor solution; and spin-coating the perovskite precursor solution to form a film, and annealing to obtain the perovskite absorption layer. According to the invention, polyionic liquid (PIL) and ionic liquid (IL) are preferably and synergistically added into a single-junction or multi-junction photovoltaic cell containing perovskite junctions, so that dual passivation of bulk phase and interface defects is realized; and the film uniformity and the photoelectric efficiency are improved.

The invention discloses a photoelectric device, a preparation method thereof and a display device, and relates to the technical field of display. The photoelectric device comprises an anode, a functional layer and a cathode which are sequentially stacked. The photoelectric device further comprises a first stable layer located on the side, away from the functional layer, of the anode, and / or a second stable layer located on the side, away from the functional layer, of the cathode, and / or a third stable layer located between the anode and the functional layer. Wherein the materials of each stable layer respectively and independently comprise one or more of 2-mercaptothiazoline and derivatives thereof, and 2-mercaptobenzothiazole and derivatives thereof. According to the photoelectric device provided by the invention, the electrochemical corrosion resistance of the electrode can be enhanced, the stability of the electrode is improved, the photoelectric efficiency of the photoelectric device is further improved, and the service life of the photoelectric device is prolonged.

The invention relates to the technical field of optical fiber communication, in particular to a thin-film lithium niobate electro-optical modulator of a stepped electrode, which comprises a substrate, a buffer layer, an optical waveguide, a metal electrode and a transition layer, the optical waveguide is an X-shaped or Y-shaped cutting LN film, a traditional ridge-shaped structure is adopted, the optical waveguide is bonded to the thick SiO2 buffer layer on the substrate, the film can be prepared through various technologies such as ion implantation, wafer bonding and hot slicing, and in order to improve the electro-optical overlapping coefficient and reduce light absorption loss, a silicon dioxide transition layer is used for connecting the metal electrode and the optical waveguide. The metal electrode is of a stepped structure, the electrode can effectively reduce electrical loss and obtain high bandwidth, and the electrode is used for generating an electric field in the aspect of photoelectric efficiency; the electric field is used for changing the functional characteristics of the thin-film lithium niobate layer and further changing the optical transmission characteristics of the waveguide, so that electro-optical modulation is realized. Therefore, the problem that an existing electro-optical modulator is low in modulation efficiency is solved.

The present invention belongs to the field of solar cell technology and discloses a 2D / 3D perovskite solar cell and its preparation method. A glass slide is added to the surface of the 2D perovskite layer to allow full contact between the PEAI solution and the 3D perovskite surface. PEAI is used as a 2D perovskite barrier layer, and a 2D covering layer is grown in situ on top of the 3D perovskite film. The annealing method of the 2D layer and the concentration of PEAI are improved. A low-temperature carbon slurry is used to replace the hole transport layer (HTM) and the metal electrode to prepare a 2D / 3D perovskite solar cell. The present invention uses a low-temperature carbon slurry to replace the expensive hole transport layer (HTM) and metal electrode, avoiding the long-term placement of the metal electrode and the perovskite layer. It also greatly reduces the experimental cost. The perovskite cell prepared by the present invention has low cost and significantly improved thermal stability. After heating at 70°C for 10 hours, it can still maintain 90% of the initial efficiency and the photoelectric efficiency can reach 14.63%.

The invention discloses a solar cell and a preparation method thereof. The solar cell comprises a silicon substrate, a passivation contact structure located on the back face of the silicon substrate and a back face electrode. The passivation contact structure comprises a tunneling layer located on the back face of the silicon substrate, a first doped polycrystalline silicon layer located on the back face of the tunneling layer, a spacer layer located in a grid line area on the back face of the first doped polycrystalline silicon layer and a second doped polycrystalline silicon layer located on the back face of the spacer layer. According to the passivation contact structure, film layers in a grid line area and a non-grid line area are different in thickness, the grid line area is of a four-layer structure, the thickness is large, the grid line area is provided with two doped polycrystalline silicon layers, grid line slurry is prevented from penetrating through the doped polycrystalline silicon layers and damaging a bottom tunneling oxide layer during sintering, and therefore the field passivation effect is guaranteed; the non-grid line area only comprises the tunneling layer and the first doped polycrystalline silicon layer, so that compared with the grid line area, the thickness is greatly reduced, the parasitic absorption of light on the back surface is reduced, and the photoelectric efficiency is improved.

The invention provides an improvement process of a solar cell P-N junction, a PERC cell and a manufacturing method of the PERC cell, and the improvement process comprises the steps: firstly removing a PSG layer after a silicon wafer is used for manufacturing a selective emitter, and then carrying out the oxidation growth of an oxidation protection layer, thereby enabling a dead layer on the surface of the P-N junction to be thinned, improving and optimizing the P-N junction, and improving the performance of the PERC cell. And recombination of diffused photoelectrons on the surface of the cell is effectively reduced. According to the manufacturing method, on the basis of the improved technology, secondary cleaning is carried out to remove the oxidation winding plating layer on the back face, the oxidation protection layer on the front face is reserved, and then the subsequent coating procedure and the subsequent electrode procedure are carried out. A diffusion oxide layer removing process is formed by firstly removing a PSG layer, then oxidizing and carrying out secondary cleaning, and finally, the photoelectric efficiency of the surface is improved. According to the secondary cleaning, not only is the oxidized winding plating layer on the back removed, but also the existing pollution of the battery piece can be cleaned before film coating, and the reworking procedure of the battery piece does not need to be additionally added.

The invention belongs to the technical field of perovskite solar cells, and discloses a perovskite solar cell based on an imidazolyl ionic liquid additive and a preparation method of the perovskite solar cell. The perovskite absorption layer comprises imidazolyl ionic liquid, the structural general formula of the imidazolyl ionic liquid is shown in the specification, R1 and R2 are independently H, C1-C18 alkyl, alkenyl or aryl, R3 is CHnY3-n, Y is at least one of H, F, Cl, Br and I, n is more than or equal to 0 and less than or equal to 3, and m is equal to 0 or 1. The ionic liquid is added to regulate and control the crystallization process of the perovskite layer, and the photoelectric efficiency and the stability are improved. Under the condition of no interface passivation, the power conversion efficiency of the MT and PIT improved perovskite solar device can reach 24.97% and 25.14%. At the room temperature of a nitrogen environment, the initial efficiency of a PIT improved device is far higher than that of a device without an additive, wherein the initial efficiency of the PIT improved device is 97% or above within 2000h.

The application discloses a solar cell, a photovoltaic module and a manufacturing method of the solar cell, and relates to the technical field of solar cells, and aims to solve the problem of how to make the photoelectric efficiency of the solar cell reach a high level. The solar cell comprises a semiconductor substrate, a first doped layer and a second doped layer. The semiconductor substrate comprises opposite first and second surfaces, and the first surface comprises a first electrode area and a first non-electrode area. The surface of the first electrode area has a first texture structure, the first non-electrode area has a second texture structure and a third texture structure, the second texture structure is located in the middle region of the semiconductor substrate, the third texture structure is located in the edge region of the semiconductor substrate, the width of the edge region is less than or equal to 3 mm, and the fluctuation degree of the third texture structure is less than the fluctuation degree of the second texture structure. The first doped layer is arranged in the first electrode area, the second doped layer is arranged in the first non-electrode area, and the doping concentration of the first doped layer is greater than the doping concentration of the second doped layer.

A method for synergistically improving the photoelectric efficiency and stability of PSCs based on phosphomolybdic acid@gamma-cyclodextrin host-guest composite material belongs to the technical field of perovskite solar cells. The present application solves the problems of poor photoelectric efficiency and stability of existing PSCs, and solves the problems of poor compatibility of existing POMs with perovskite system and easy aggregation of POMs in the process of perovskite defect passivation, which leads to low utilization rate of passivation sites. Preparation: I, PMo 12 @gamma-CD host-guest composite material; II, preparation of PMo 12 @gamma-CD modified perovskite precursor solution; III, preparation of PSCs. The present application is used for synergistically improving the photoelectric efficiency and stability of PSCs based on phosphomolybdic acid@gamma-cyclodextrin host-guest composite material.

The invention belongs to the technical field of photovoltaic industry, and particularly relates to a preparation method and application of an environment-friendly composite material for improving photovoltaic photoelectric efficiency. The combined material is composed of an agent A used for improving the light absorption efficiency of the photovoltaic module and an agent B used for improving the electron transmission efficiency of the photovoltaic module. The agent A is prepared by grinding titanium oxide, sodium sulfate, sodium pyrophosphate and a rare earth compound, introducing nitrogen under 2500 DEG C plasma heating for nitridation treatment to form nitrogen-doped crystal lattices, dissolving the nitrogen-doped crystal lattices in deionized water, and grinding the nitrogen-doped crystal lattices; the agent B is graphite, polyethylene glycol, sodium sulfate, sodium pyrophosphate, rubidium-containing soluble ion salt and sulfuric acid, a graphite product is formed after ultrasonic mixing and oxidation, the graphite product is heated at the temperature of 1,300 DEG C under the ultra-vacuum condition smaller than or equal to 10 <-6 > Pa and then subjected to discharge treatment through an electric arc furnace at the temperature of 3500 DEG C to form a carbon atom recombination structure, and the carbon atom recombination structure is dissolved in isopropanol and ground. By utilizing the settings, the invention provides the environment-friendly composite material for improving the photovoltaic photoelectric efficiency as well as the preparation method and the application of the environment-friendly composite material.

The invention provides a perovskite cell and a preparation method thereof, and a photovoltaic module, the perovskite cell comprises a substrate layer, a conductive function layer, a middle anchoring layer, a hole transport layer, a perovskite absorption layer, an electron transport layer, a conductive layer and a metal electrode layer which are stacked in sequence, and the material of the middle anchoring layer comprises lanthanide series metal salt. According to the invention, a multi-coordination structure is realized by utilizing extranuclear multiple electrons of lanthanide series metal salt and a self-assembled monomolecular layer, so that the adhesive force and uniformity of self-assembled monomolecules are improved, interface defects are improved, and the photoelectric efficiency of a photovoltaic module is further improved.

The present invention discloses a preparation method of a double-cation synergistic chelation passivated perovskite thin film and device, belonging to the technical field of photovoltaic device manufacturing. The preparation method of the present invention includes the following steps: (1) coating a copper complex solution on a substrate and heating to form a film as a base layer thin film; (2) coating a perovskite solution containing a zinc complex on the base layer thin film and heating to obtain the double-cation synergistic chelation passivated perovskite thin film. By using a copper complex and a zinc complex to assist in the preparation of a CsPbI2Br battery, through a specific preparation process, that is, first coating a layer of copper complex solution and then spin-coating a perovskite solution containing another zinc complex, the passivation effect can be significantly improved, and the photoelectric efficiency and long-term humidity stability of the perovskite battery can be improved.

The application discloses a kind of multi-functional group dynamic crosslinking polymer preparation methods for perovskite photovoltaic device, comprising: end hydroxyl polydimethylsiloxane, diselenoic acid, dopamine, 4-dimethylaminopyridine, condensing agent and solvent.By the above mode, the multi-functional group dynamic crosslinking polymer preparation method for perovskite photovoltaic device of the application greatly improves the mechanical properties and photoelectric efficiency of perovskite photovoltaic device, and the environmental stability of perovskite photovoltaic device is also improved, and has self-repairing function, effectively prolongs service life.

The application discloses a perovskite phase additive, a perovskite thin film, a solar cell and a preparation method, a battery assembly and a power utilization device thereof. The perovskite phase additive comprises a heterometallic substituted polyoxometalate. The perovskite thin film and the perovskite active layer of the solar cell are doped with the perovskite phase additive. The heterometallic substituted polyoxometalate utilizes adjustable energy levels, multi-site coordination and gradient redox activity, can realize the synergistic effect of defect passivation, crystallization regulation and stability improvement of the perovskite thin film, and thus improves the photoelectric efficiency and working stability of the device.

The utility model discloses a novel quartz glass photocatalytic microchannel reactor, and relates to the technical field of photocatalytic reactor equipment. The reactor comprises a box body, a lamp panel, an adjustable bracket, a photocatalytic reaction unit and a controller, the lamp panel, the adjustable bracket and the photocatalytic reaction unit are arranged in the box body, and the controller is respectively connected with the lamp panel and the photocatalytic reaction unit; the photocatalytic reaction unit comprises a cover plate, a quartz glass plate, a reaction plate and a heat exchange plate which are arranged from top to bottom, a reaction channel is formed in the side, close to the quartz glass plate, of the reaction plate, and a heat exchange short circuit prevention channel is formed in the side, close to the heat exchange plate, of the reaction plate. According to the utility model, the quartz glass is used for transmitting light with almost all wavelengths, so that the attenuation of light intensity is greatly reduced, the photoelectric efficiency is greatly reduced under the same working condition, the cost is saved, and the working conditions of most photocatalytic reactions can be met.

The utility model discloses an efficiency detection device of a photovoltaic cell, the efficiency detection device of the photovoltaic cell comprises a crystalline silicon standard sheet, a processing unit and a display unit, and the crystalline silicon standard sheet comprises a crystalline silicon optical signal input end and a crystalline silicon electric signal output end. The processing unit comprises a crystalline silicon electric signal input end, a photovoltaic area input end, a positive electrode signal input end, a negative electrode signal input end and a photoelectric efficiency output end; the crystalline silicon electric signal input end is electrically connected with the crystalline silicon electric signal output end, the photovoltaic area input end is electrically connected with the photovoltaic area providing end of the efficiency detection device, the positive electrode signal input end is electrically connected with the positive electrode signal detection end of the efficiency detection device, and the negative electrode signal input end is electrically connected with the negative electrode signal detection end of the efficiency detection device. The display unit comprises a display input end, and the photoelectric efficiency output end is electrically connected with the display input end. The positive electrode signal detection end is electrically connected with the positive electrode of the to-be-detected photovoltaic cell, and the negative electrode signal detection end is electrically connected with the negative electrode of the to-be-detected photovoltaic cell.

The invention discloses an annular pump laser and a module sintering device and method thereof. According to the annular pump laser module sintering device, the sintering device comprises a sintering base and a locking and positioning device; wherein the sintering base comprises a bearing part used for bearing a heat sink of the annular pump laser and a locking matching part extending upwards from the bearing surface of the bearing part, and the locking matching part penetrates through a center hole of the heat sink; one end of the locking and positioning device is matched and positioned with the locking and matching part, and the other end of the locking and positioning device presses the to-be-welded part on the laser module welding part on the circumferential surface of the central hole of the heat sink. The sintering device is arranged, the corresponding to-be-welded part is pressed and fixed to the heat sink of the sintering base through the locking device, and then the whole sintering device is put into the sintering furnace to be sintered and formed, so that the consistency and stability of the performance of all laser bar beams in the sintering device are achieved; and meanwhile, the photoelectric efficiency and the reliability of the annular pump laser are improved.

The invention discloses a laminated cell, a preparation method thereof and a photovoltaic module, and belongs to the field of photovoltaic technology. The laminated cell comprises a perovskite cell, a tunneling composite layer and a TOPCon cell, the perovskite cell comprises a hole transport layer; the tunneling composite layer is a composite layer of a MoS2-2 layer and an HfS2 layer; and the MoS2-2 layer is arranged between the hole transport layer and the HfS2 layer composite layer. A novel two-dimensional material composite tunneling composite layer MoS2 / HfS2 heterojunction is introduced to replace a traditional metal oxide tunneling composite layer, the light transmittance is larger than 95%, the resistance loss is smaller than 0.5%, and the quantum tunneling probability is larger than 90%, so that efficient transmission of carriers between different cell layers is effectively promoted, effective separation and collection of charges are achieved, and the quantum tunneling efficiency is improved. And the photoelectric efficiency of the perovskite-TOPCon laminated cell is obviously improved.

Provided in the present invention are a rear-surface-passivated CIGS single-junction cell and interconnected cells thereof and a preparation method therefor, and a CIGS / PVK double-junction tandem cell and a preparation method therefor. The CIGS single-junction cell comprises a substrate, and a back electrode, an absorption layer, a buffer layer, a high barrier layer, a front electrode and grid lines which are sequentially formed, wherein a discontinuous passivation layer is deposited between the back electrode and the absorption layer. The preparation method for the CIGS single-junction cell comprises: depositing a back electrode on a substrate; forming a suspension from nanoparticles, coating the suspension onto the back electrode to form a wet film, and conducting annealing, so as to form a passivation layer; and sequentially depositing an absorption layer, a buffer layer, a high barrier layer, a front electrode layer and grid lines on the passivation layer. The CIGS / PVK double-junction tandem cell comprises a bottom CIGS single-junction cell and a top perovskite cell, the two forming an integral body by means of the interconnection of two or four internal ends thereof. Further provided in the present invention is a passivation method for interconnected CIGS single-junction cells. P1, P2 and P3 scribe lines are arranged inside the CIGS single-junction cell. The rear-surface-passivated cell provided by the present invention reduces rear surface recombination and improves photoelectric efficiency.

The present application discloses a whole-process management method for aquaculture based on photovoltaic complementarity in fishery, comprising: obtaining aquaculture growth data of a growth cycle under a photothermal environment, and screening out characteristic factors; analyzing the aquaculture growth data of the characteristic factors, obtaining growth evaluation values ​​of the growth cycle, and drawing aquaculture growth curves corresponding to the photothermal environment; analyzing multiple aquaculture growth curves, screening out preferred aquatic species, and constructing a photothermal environment-preferred aquatic species mapping table; determining a preferred reference group and formulating a management strategy based on a maximum photoelectric efficiency objective function and a photothermal environment-preferred aquatic species mapping table, constructing an aquaculture growth curve based on the growth evaluation value, thereby obtaining the relationship between shrimp and crab quality indicators and different photothermal environments, and establishing a response mechanism of photovoltaic fishery farming-photothermal environment-photovoltaic array structure, thereby forming an efficient coupling management method of "shrimp and crab-environment-photovoltaic power generation", and improving the modernization level of fishery-photovoltaic complementary farming.

The present application discloses an infrared LED epitaxial structure and a manufacturing method thereof. The infrared LED epitaxial structure comprises, stacked from bottom to top, a substrate, a first semiconductor layer, a first space layer, a multi-quantum well layer, a second space layer, and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer have opposite doping types. The first space layer and the second space layer are superlattice structures. The highest Al composition in each layer of the first space layer is lower than the highest Al composition in each layer of the second space layer, so that the first space layer and the second space layer form an asymmetric structure. The asymmetric space layer in the present application can increase the height of the effective barrier, suppress the overflow of carriers, and enhance the quantum confinement effect on carriers. Moreover, due to the tunneling characteristics of the superlattice, the mobility of carriers is improved. In addition, the asymmetric design can effectively reduce the overflow of carriers from the multi-quantum well, improve the light field distribution, and enhance the photoelectric efficiency and reliability of the infrared light-emitting diode.

The invention relates to the technical field of electro-optical modulators, in particular to an inverted step capacitor load type traveling wave electrode lithium niobate electro-optical modulator which comprises a substrate, a buffer layer, an optical waveguide, a metal electrode, an isolation layer and a high-dielectric cladding. The metal electrode is an inverted step capacitance load type electrode which can effectively reduce electrical loss and obtain high bandwidth, the inverted step capacitance load type metal electrode enhances the effect on the optical waveguide and effectively improves the modulation efficiency on the aspect of photoelectric efficiency, and the high-dielectric cladding and the isolation layer change the electric field intensity distribution while reducing the optical loss, so that the modulation efficiency is improved. The electric field intensity in the waveguide is greatly improved, the overlapping between the electric field and the light field is enhanced, the modulation efficiency is further improved, the half-wave voltage length product of 0.99 V.cm is achieved under the light absorption loss of 0.25 dB / cm through the lithium niobate electro-optical modulator of the inverted-step capacitance load type traveling wave electrode, and important guiding significance is achieved for the design of the electro-optical modulator.

The application discloses a solar cell, a photovoltaic module and a manufacturing method of the solar cell, and relates to the technical field of solar cells, and aims to solve the problem of how to make the photoelectric efficiency of the solar cell reach a high level. The solar cell comprises a semiconductor substrate, a first doped layer and a second doped layer. The semiconductor substrate comprises opposite first and second surfaces; the first surface comprises a first electrode area and a first non-electrode area; the surface of the first electrode area has a first texture structure, and the first non-electrode area has a second texture structure; the second surface comprises a second electrode area and a second non-electrode area; the second non-electrode area has a third texture structure, and the size consistency of the second texture structure is greater than that of the third texture structure; the first doped layer is arranged on the first electrode area; the second doped layer is arranged on the first non-electrode area; and the doping concentration of the first doped layer is greater than that of the second doped layer.

The present invention provides a maze-type multi-level pore structure strontium titanate and a preparation method and application thereof, the preparation method comprising the following steps: (1) mixing a strontium source mixed solution and a titanium source mixed solution, and then performing a hydrothermal crystallization reaction under stirring, and obtaining an intermediate product after solid-liquid separation; (2) washing the intermediate product obtained in step (1), and then drying and roasting in sequence to obtain the maze-type multi-level pore structure strontium titanate. The maze-type multi-level pore structure strontium titanate provided by the present invention has the characteristics of multi-level pores, controllable dominant crystal planes, high purity, etc. in structure, and has the advantages of high light utilization rate and high photoelectric efficiency in performance, and can be applied to the fields of new energy, environmental protection, photocatalysis, photovoltaic power generation, and photocatalytic water splitting for hydrogen production.

The invention discloses a preparation method and application of a high-efficiency cesium-based perovskite solution and a thin film, and belongs to the field of photoelectric devices. A cesium salt dissolving technology is invented, that is, cesium salt and metal halide powder are dissolved through oxidized NMP and a small amount of DMSO additive, and the problems that a cesium-based perovskite precursor is poor in solubility, complex in preparation and the like are solved. Meanwhile, the invention further discloses a technology for preparing the high-quality cesium-based perovskite thin film, namely a novel two-step mutual diffusion technology. The method comprises the following steps: firstly spin-coating a mixture of excessive metal halide and organic halide on a hole transport layer, then vertically dropwise adding an organic halide solution, and heating and annealing to form a compact high-quality thin film. Compared with the prior art, the crystallization time is prolonged, toxic chlorobenzene is removed, and the battery consistency is improved. The cesium-based inverted pure iodine perovskite solar cell prepared on the basis of the method has the photoelectric efficiency of 17.85%, and a new path is provided for commercialization of perovskite cells.

The invention provides a semiconductor laser module and a preparation method thereof. The semiconductor laser module comprises a plurality of rows of chips and an optical shaping assembly. The optical shaping assembly comprises a space beam combining part, and the space beam combining part comprises a plurality of transmission beam combining parts. Each transmission beam combining part is used for forming light beams emitted by the corresponding row of chips into transmission light beams, so that the coupling loss is reduced, and the photoelectric efficiency is improved; the semiconductor laser module can be used for combining multiple rows of light beams, and the manufacturing cost of the transmission beam combining component is low.

The present invention provides a tandem type solar cell device and a method for manufacturing the same, which can ensure the stability of the electrical / mechanical connection between an upper cell and a lower cell by making full use of the excellent characteristics of a tandem type solar cell and omitting a recombination layer, and can maximize the process efficiency and economy due to omission of an intermediate layer, thereby improving the reliability of the tandem type solar cell device. And optical loss such as reflection loss or parasitic absorption caused by the recombination layer can be prevented, so that the photoelectric efficiency can be remarkably improved.