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64 results about "Intermediate cell" patented technology
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Intermediate cells are approximately the size of parabasal or superficial cells; their nuclei are the size of an erythrocyte with fine chromatin. Superficial cells are polygonal, transparent, eosinophilic, flat / thin; nucleus is pyknotic, round / oval; are like intermediate cells but with pyknotic and smaller nuclei.
Method for separating and extracting stem cells from placenta, umbilical cord or adipose tissue
ActiveCN101693884AEasy accessSpecification acquisitionSkeletal/connective tissue cellsArtificially induced pluripotent cellsFicollDisease
The invention relates to a method for separating and extracting stem cells from a placenta, umbilical cord or adipose tissue, which comprises the following process steps: firstly mixing the placenta, umbilical cord or adipose tissue and a cell maintenance fluid according to the proportion by weight of 2.5-4:1, putting the mixture into a tissue crushing barrel, adding collagenase after crushing, uniformly mixing, hatching at the temperature of 37 DEG C, filtering, adding a precipitator, sucking a supernatant fluid after settling, centrifuging, removing the supernatant fluid, adding concentrated cells into a liquid of diatrizoate sodium-ficoll 400#, then centrifuging, collecting 10-15 ml of intermediate cell layer, washing with the cell maintenance fluid, counting the collected cells, and providing the cells for clinical use when the cell survival ratio is more than or equal to 95 percent. The invention not only realizes the separation and the extraction of all stem cells from the placenta, umbilical cord or adipose tissue, but also realizes industrialized production, and enables doctors to conveniently, safely and canonically obtain the adult stem cells in clinic and use the adult stem cells for treating the diseases of patients as using medicaments, thereby solving the bottleneck problem of difficult obtainment of adult stem cells in clinic and popularizing a cell treatment technology.
Owner:NINGXIA ZHONGLIANDA BIOPHYSICS
Semiconductor integrated circuit device
A semiconductor integrated circuit device, comprising: a semiconductor layer formed via an embedded insulation film on a substrate; an FBC (Floating Body Cell) which stores data by accumulating a majority carrier in a floating channel body formed on the semiconductor layer; a reference cell connected to a reference bit line, the reference cell having the same size, shape and electric properties as those of the FBC; an intermediate cell writing control circuit which performs control for writing intermediate potential which is less than data “1” and larger than data “0” in the channel body of the reference cell; and a sense amplifier which performs control for reading out data stored in a selected FBC based on the intermediate data read out from the reference cell.
Owner:KK TOSHIBA
Manufacturing method and apparatus for making alkaline ionized water and acidic water
InactiveUS6464845B2Stably and efficiently mass-produceStrong natureCellsWater treatment parameter controlElectrolysed waterWater cycling
The manufacturing apparatus for producing alkaline ionized water and acidic water by electrolysis of water has an electrolytic bath including a cathode cell, an intermediate cell, and an anode cell, separated by diaphragms; an electrolysis solution bath connected to the intermediate cell via an electrolysis solution circulating line and an electrolysis solution circulating pump; a circulation container bath for alkaline ionized water connected to the cathode cell via an alkaline ionized water circulating line and an alkaline ionized water circulating pump; a supplying line for raw material water for producing acidic water connected to an inlet of the anode cell; a withdrawing line for acidic water connected to an outlet of the anode cell; a supplying system for raw material water for making the alkaline ionized water connected to the circulation container bath and a withdrawing line with a water collecting device for withdrawing alkaline ionized water.
Owner:CHEMICOAT
Solar cell having a graded buffer layer
InactiveUS20110220190A1Photovoltaic energy generationSemiconductor devicesIntermediate cellSolar cell
An IMM solar cell includes a substrate, a bottom cell on the substrate; a graded buffer layer on the bottom cell; a middle cell on the graded buffer layer; a top cell on the middle cell.
Owner:EPISTAR CORP
Three connection solar cell having reflection layer and manufacturing method therefor
ActiveCN101388419AImprove absorption efficiencyReduce thicknessFinal product manufacturePhotovoltaic energy generationSemiconductor materialsIntermediate cell
The invention discloses a triple-junction solar cell with a reflecting layer and a production method thereof, wherein a semiconductor material layer of the triple-junction solar cell which comprises two sets of Bragg reflecting layers (DBR) is grown on a P-Ge substrata, and the two sets of Bragg reflecting layers (DBR) are respectively a set of AlInP / AlGaInP top cell reflecting layer which is used to reflect shortwave photons and a set of AlAs / AlGaAs intermediate cell reflecting layer which is used to reflect intermediate-wave photons. The structure can reduce the thickness of the cell, reduces the free path of non-equilibrium carriers, and increases the efficiency of photo-electronic conversion.
Owner:XIAMEN CHANGELIGHT CO LTD
Target cell determining method and device
ActiveCN103945469AImprove switching performanceImprove experienceWireless communicationIntermediate cellBase station
The embodiment of the invention discloses a target cell determining method and device. The problems of long switching preparation delay and easy dropping in the prior art are solved. The method provided by the embodiment of the invention comprises the steps that after a service base station receives a measurement report sent by UE served by the service base station, the service base station searches adjacent cells matching the work frequency point and PCI of a target cell of a UE report in the measurement report from the adjacent cell relationship table, and takes the found adjacent cells as intermediate cells; and if at least two intermediate cells are found, according to first position information corresponding to each intermediate cell locally saved and second position information in the measurement report, the target cell of the UE report is determined from at least two intermediate cells. According to the embodiment of the invention, the UE simply needs to report the measurement report, and the target cell can be accurately determined; the switching preparation delay is reduced; and the probability of dropping caused by too long delay is reduced.
Owner:DATANG MOBILE COMM EQUIP CO LTD
Solar cell electroplating equipment to improve electroplating uniformity
InactiveCN102296344AImprove the difference in electric field densityUniform plating weight gainElectrodesIntermediate cellEngineering
The invention discloses a solar cell sheet electroplating equipment for improving the uniformity of electroplating, comprising an electroplating tank, an electroplating solution, a battery sheet and a silver anode, the electroplating tank is provided with an electroplating solution, and the battery sheet and the silver anode are arranged in the electroplating tank and immersed in the electroplating solution, the silver anode is set at the corresponding position under the battery sheet, and the shape of the silver anode is an upwardly convex arc in the middle, that is, the vertical distance between the middle of the silver anode and the battery sheet is the closest , the closer to the two ends of the silver anode, the farther the vertical distance between the silver anode and the cell. By changing the shape of the silver anode, the present invention makes the electric field received by each battery sheet more uniform, so as to obtain a more uniform electroplating weight gain, which will reduce the variance of this process and improve the quality of the product. Changing the shape of the silver anode is relatively simple to implement, without increasing costs and without changing the manufacturing process.
Owner:ALTUSVIA ENERGY TAICANG
Preparation method of gallium arsenide thin-film multijunction stacked solar cells
ActiveCN103000759AImprove uniformityImprove reliabilityRenewable energy productsSemiconductor devicesIntermediate cellLow cost substrate
The invention relates to a preparation method of gallium arsenide thin-film multijunction stacked solar cells. The preparation method is characterized by including the steps of firstly, allowing for reverse growth of an epitaxial layer to prepare a GaAs three-junction solar cell; secondly, bonding the cell prepared in the step 1 to a Si substrate; thirdly, stripping a Ge substrate; fourthly, adhering a low-cost substrate; and fifthly, stripping the Si substrate. The preparation method allows for epitaxial growth of a top cell and an intermediate cell prior to growth of a bottom cell, and accordingly the lattice subjected to epitaxial growth firstly is guaranteed to match with perfect epitaxial growth of the top cell and the intermediate cell; doping uniformity and film reliability in large-area epitaxial thin films are increased, and photoelectric conversion efficiency is further improved; by the use of the low-cost support substrate lower than Ge in specific weight, the weight of the cells is reduced, the power ratio of the solar cells is increased, the cost of the cells is reduced effectively, and application prospect of the III-V compound solar cells is improved greatly.
Owner:TIANJIN LANTIAN SOLAR TECH +2
Practical structure for making a multilevel converter
InactiveUS6040990AApparatus without intermediate ac conversionElectric variable regulationCapacitanceIntermediate cell
A multilevel converter structure made up of cells in cascade, each intermediate cell containing two switches, with one pole of each of the two switches forming part of a pair of upstream poles and the other pole of each of the switches forming part of a pair of downstream poles, the pair of downstream poles of an upstream cell being connected to the pair of upstream poles of a downstream cell, the converter structure also having a respective capacitor for each cell, each capacitor being connected between the two poles constituting the pair of downstream poles of its cell. The converter structure is made up of modules, among which at least an intermediate module contains an upstream capacitor element, in addition to two switches corresponding to the switches of an intermediate cell, the capacitance of said capacitor element being a fraction of the capacitance of the cell capacitor of said upstream cell, while a module upstream from said intermediate module contains a downstream capacitor element whose capacitance is a second fraction of the capacitance of the cell capacitor of said upstream cell.
Owner:APC POWER CONVERSION
Multijunction gallium arsenide solar cell
InactiveCN101764165AIncrease current densityIncrease short circuit currentPhotovoltaic energy generationSemiconductor devicesIntermediate cellSolar cell
The invention relates to a multijunction gallium arsenide solar cell, comprising a top cell mainly composed of GaInP, an intermediate cell mainly composed of InGaAs and a bottom cell mainly composed of Ge, wherein an AlInP(p+) / AlGaAs(p++)-GaInP(n++) / AlInP(n+) or AlGaInP(p+) / AlGaAs(p++)-GaInP(n++) / AlInP(n+) tunneling junction connection structure is arranged between the top cell and the intermediate cell. As the above tunneling junction connection structure is adopted, the multijunction gallium arsenide solar cell according to the invention can not only reduce the reflection of incident light prominently and improve the current density of the cells, but can also enhance the conversion efficiency of three-junction cell.
Owner:SHANGHAI INST OF SPACE POWER SOURCES +1
Preparation method of multi-junction solar cell
InactiveCN101728458ABroad absorption spectrumPrecise growth controlFinal product manufactureSemiconductor devicesScreen printingOhmic contact
The invention discloses a preparation method of a multi-junction solar cell. The solar cell has a Si / GaAs / InGaP three-layer structure, wherein the bottom cell is a PN junction cell of Si, the intermediate cell is a PN junction cell of GaAs, the top cell is a PN junction cell of InGaP and each sub-cell directly grows on the substrate of a silicon cell. The method comprises the following processing steps: adopting chemical corrosion method to grow dense and uniform texture on the surface of monocrystalline wafer under magnetic field, diffusing to prepare PN junction and form the bottom cell in a high temperature diffusion furnace; growing GaAs tunnel junction on the surface of silicon wafer N-type junction of the prepared PN junction; growing the GaAs cell on the tunnel junction; growing the GaAs tunnel junction on the N-type junction of the GaAs cell; growing the InGaP cell on the tunnel junction; growing an anti-reflective film on the InGaP cell; forming ohmic contact by using screen printing; and obtaining the multi-junction solar cell.
Owner:上海联孚新能源科技集团有限公司
Wireless communication system facilitating communications through local networks
ActiveUS20060215598A1Create quicklyMore serviceError preventionFrequency-division multiplex detailsCommunications systemIntermediate cell
A wireless communication system (20) includes a base station (22) that is capable of communicating with a plurality of intermediate cells (24, 60). Each intermediate cell (24, 60) directly communicates with a plurality of end users (26, 64). Communications from an end user (26, 64) may be routed through the intermediate cell to a wireless network (30) associated with the base station (22) or directly to another intermediate cell in a disclosed example. The intermediate cells communicate with the base station on behalf of the end users such that the wireless network recognizes the intermediate cell as a single user and, in one example, assigns temporary listed directory numbers to each of the end users associated with each intermediate cell so that communications from each end user may be handled individually.
Owner:BEIJING XIAOMI MOBILE SOFTWARE CO LTD
Multi-junction solar cell with high peak current density tunnel junction
ActiveCN101814543AIncrease the doping concentrationSteep interfaceFinal product manufacturePhotovoltaic energy generationHigh concentrationIntermediate cell
The invention discloses a multi-junction solar cell with a high peak current density tunnel junction, in particular a high-concentration GaInP / GaInAs / Ge three-junction solar cell, which is characterized in that: a tunnel junction connecting a Ge bottom cell, a GaInAs intermediate cell and a GaInP top cell have five layers, wherein the first layer is an n-type (AlxGa1-x)InP or AlGaAs nonproliferation layer; the second layer is Si and Te codoped GaAs membrane; the third layer is Te doped GaAs membrane; the fourth layer is a C doped AlGaAs membrane; and the fifth layer is a p-type (AlxGa1-x)InP or AlGaAs nonproliferation layer. The solar cell can obtain the peak current density of the tunnel junction of more than 150A / cm<2>. The multi-junction solar cell with the tunnel junction can work under a condition of 2,000-times solar concentration.
Owner:XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
Frequency planning for a cellular communication system
InactiveUS20100317354A1High frequencyImprove performanceNetwork planningIntermediate cellEngineering
An apparatus for frequency planning for a cellular communication system comprises a receiver (201) receiving measurement reports from remote stations. An interference processor (203) determines, for each of a plurality of cells, a neighbour cell interference relationship between at least a first and a second neighbour cell for the cell in response to measurement reports from remote stations served by the cell. The neighbour cell interference relationship is indicative of interference from the first to the second neighbour cell. The first and second cells are both neighbours of an intermediate cell but are not (necessarily) neighbours of each other. A frequency planner (205) determines a frequency plan in response to the neighbour cell interference relationships. The invention may allow the interference impact on neighbours of neighbour cells to be estimated and taken into account in the frequency plan thereby leading to improved frequency plans and performance of the cellular communication system.
Owner:GOOGLE TECH HLDG LLC
Efficient triple-junction solar cell and manufacturing method thereof
InactiveCN103258872AHigh mechanical strengthImprove lattice qualityPhotovoltaic energy generationSemiconductor devicesEngineeringSolar battery
The invention discloses an efficient triple-junction solar cell and a manufacturing method thereof. The efficient triple-junction solar cell comprises a growth substrate, a bottom cell, an intermediate cell and a top cell, wherein the growth substrate is provided with two polished surfaces; the bottom cell is formed by a strain compensation superlattice structure, grows on the reverse side of the growth substrate in an inverted mode, and is provided with a first band gap, and the equivalent lattice constant of the bottom cell is matched with that of the growth substrate; the intermediate cell is formed on the obverse side of the growth substrate and is provided with a second band gap larger than the first band gap, and the lattice constant of the intermediate cell is matched with that of the growth substrate; the top cell is formed on the intermediate cell and provided with a third bang gap larger than the second band gap, and the lattice constant of the top cell is matched with that of the intermediate cell. Distribution of energy band gaps of the triple-junction solar cell meets an optimal choice for capturing a solar energy spectrum, and current matching and lattice matching are achieved, so photoelectric conversion efficiency of the triple-junction solar cell is effectively improved; according to the manufacturing method of the triple-junction solar cell, a mode of double-faced growth on the growth substrate is adopted, so growth cockamamie processes brought in the later stage of inverted growth are eliminated, and the yield of products is improved.
Owner:XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
Characterizing performance of an electronic system
InactiveUS20090287462A1Near-SPICE accuracy in the resultsError detection/correctionComputation using non-denominational number representationStatic timing analysisEffective power
In one embodiment of the present invention, the performance of an electronic circuit having a clock path between a clock source cell and a clock leaf cell is characterized over a simulation duration, where the clock path has one or more intermediate cells. Variations in the effective power supply voltage level at at least one intermediate cell over the simulation duration are determined using a system-level power-grid simulation tool. Static timing analysis (STA) software is used to determine cell delays for at least one of the intermediate cells for different clock-signal transitions at different times during the simulation duration. The cell delays are then used to generate one or more metrics characterizing the performance of the electronic circuit, such as maximum and minimum pulse widths, maximum cycle-to-cycle jitter, and maximum periodic jitter.
Owner:BELL SEMICON LLC
Urban surface runoff flow direction calculation method and device based on cellular automaton
ActiveCN110442988AImprove simulation accuracySpecial data processing applicationsCellular automationIntermediate cell
The invention discloses an urban surface runoff flow direction calculation method and device based on a cellular automaton. The method comprises the following steps: establishing a cellular basic geographic scene of a research area; determining downstream cells of the intermediate cells according to the water level value, and calculating the time required for transferring the water quantity of theintermediate cells to each downstream cell; comparing the water level value standard deviation between the intermediate cell and the neighborhood cell with the standard deviation threshold, selectinga water quantity distribution weight value, and determining the water quantity distribution proportion in each downstream cell; comparing the time step length of the model with the actual transfer time of the water quantity, and determining the water quantity distribution proportion within one time step length; and calculating the water quantity transferred from the intermediate cell to each downstream cell according to the water quantity of the intermediate cell and the water quantity distribution proportion, setting a transfer upper limit in each downstream direction, and correcting the water quantity transferred to each downstream cell. The method is more suitable for the actual flow direction motion process, can make up for the defects of other multi-flow-direction algorithms, and improves the simulation precision of the urban confluence process.
Owner:NANJING HYDRAULIC RES INST
Novel distributed array and contact architecture for 4-stack 3D X-point memory
ActiveCN112166471AImprove Array EfficiencyElectrical apparatusDigital storageBit lineComputer architecture
A three-dimensional memory includes a bottom cell layer of a memory cell, a top cell layer of the memory cell, and at least one intermediate cell layer of the memory cell. The bottom cell layer is coupled to the bottom cell bit line, the bottom cell bit line decoder, the bottom cell word line, and the bottom cell word line decoder. The intermediate cell layer is coupled to an intermediate cell bitline, an intermediate cell bit line decoder, a bottom or intermediate cell word line, and a bottom or intermediate cell word line decoder. The top cell layer is coupled to the top cell bit line, thebottom cell bit line decoder, the intermediate cell word line, and the intermediate cell word line decoder. A bit line decoder may be arranged in a sub-portion offset in a vertical direction. A word line decoder may be arranged in a sub-portion offset in a horizontal direction.
Owner:YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
Differentiation of human pluripotent stem cells to multipotent neural crest cells
ActiveUS20160237405A1Increase profitEffectively lead to differentiationNervous system cellsArtificially induced pluripotent cellsSmooth muscleInduced pluripotent stem cell
The present invention relates to the differentiation of human pluripotent cells, including human pluripotent stems cells to produce a self-renewing multipotent neural crest cell population in a single step method without the requirement of isolation of intermediate cells and without appreciable contamination (in certain preferred instances, virtually none) with Pax6+ neural progenitor cells in the population of p75+Hnk1+Ap2+ multipotent neural crest-like cells. The multipotent neural crest cell population obtained can be clonally amplified and maintained for >25 passages (>100 days) while retaining the capacity to differentiate into peripheral neurons, smooth muscle cells and mesenchymal precursor cells.
Owner:UNIV OF GEORGIA RES FOUND INC
Method for separating and extracting stem cells from placenta, umbilical cord or adipose tissue
ActiveCN101693884BEasy accessSpecification acquisitionSkeletal/connective tissue cellsArtificially induced pluripotent cellsDiseaseFicoll
Owner:NINGXIA ZHONGLIANDA BIOPHYSICS
Differentiation of human pluripotent stem cells to multipotent neural crest cells
InactiveUS20130280804A1Increase profitEffectively lead to differentiationNervous system cellsArtificial cell constructsSmooth muscleInduced pluripotent stem cell
The present invention relates to the differentiation of human pluripotent cells, including human pluripotent stems cells to produce a self-renewing multipotent neural crest cell population in a single step method without the requirement of isolation of intermediate cells and without appreciable contamination (in certain preferred instances, virtually none) with Pax6+ neural progenitor cells in the population of p75+ Hnk1+ Ap2+ multipotent neural crest-like cells. The multipotent neural crest cell population obtained can be clonally amplified and maintained for >25 passages (>100 days) while retaining the capacity to differentiate into peripheral neurons, smooth muscle cells and mesenchymal precursor cells.
Owner:UNIV OF GEORGIA RES FOUND INC
Battery module
ActiveUS20160276720A1Improve stabilityImpair safety of batteryCell temperature controlCell component detailsElectricityIntermediate cell
The invention concerns a battery module (10, 72) consisting of a number of battery cells (12) electrically connected to one another by means of connectors (18). The battery module (10, 72) comprises a number of temperature sensors (20). The battery module (10, 72) comprises at least one intermediate cell (30) with an integrated temperature sensor system (36) comprising temperature sensors (20).
Owner:ROBERT BOSCH GMBH
Three-dimensional dyeing method for amygdalus communis l anther cells
InactiveCN106769347ASimple and fast operationWith three-dimensional dyeing effectPreparing sample for investigationIntermediate cellPollen
The invention discloses a three-dimensional dyeing method for amygdalus communis l anther cells. According to the three-dimensional dyeing method, an amygdalus communis l anther slice treated with a conventional paraffin slicing method is dyed with an iron haematoxylin solution prepared 10 min in advance, such that the pollen granulocytes, the tapetal cells, the intermediate cells, the connective cells, the endothecium cells, the epidermic cells, the cells at the connection tissue position and the filaments of the amygdalus communis l anther can be clearly colored, and the coloring degrees among the cells at different parts are different so as to provide the three-dimensional dyeing effect. The three-dimensional dyeing method can be used for the study on the three-dimensional dyeing method internal structure change and the anther development process.
Owner:XINJIANG AGRI UNIV
Novel distributed array and contact architecture for 4 stacked 3D PCM memories
PendingCN111758171AImprove Array EfficiencySolid-state devicesSemiconductor devicesComputer hardwareBit line
A three-dimensional memory includes memory cell layers stacked in a depth direction. The bottom cell layer includes a bottom cell array block, the top cell layer includes a top cell array block aligned with the bottom cell array block in a vertical direction, and the at least one intermediate cell layer includes an intermediate cell array block offset from the bottom cell array block in the vertical direction. The memory includes a plurality of bit lines and a plurality of bit line contacts, where a bottom cell bit line contact is connected to the bottom cell bit line, a top cell bit line contact is connected to the top cell bit line and the bottom cell bit line, and an intermediate cell bit line contact is connected to the intermediate cell bit line and located in a space between the bottom cell array blocks.
Owner:YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
GaInP/GaAs/InGaAs three-junction film solar cell
PendingCN109950337AImprove conversion efficiencyReduce defect densityPhotovoltaic energy generationSemiconductor devicesHeterojunctionIntermediate cell
The invention provides a GaInP / GaAs / InGaAs three-junction film solar cell which comprises a GaInP top cell, a GaAs intermediate cell and an InGaAs bottom cell successively along the light incident direction. The GaInP top cell and GaAs intermediate cell are provided with a first tunneling junction; and a second tunneling junction and a crystal graded buffer (CGB) layer is arranged between the GaAsintermediate cell and InGaAs bottom cell successively. Each of the GaInP top cell, GaAs intermediate cell and InGaAs bottom cell uses an nP+ heterojunction structure, and compared with a traditionalGaInP / GaAs / InGaAs three-junction film solar cell with an N+p structure, the area of metal grids in the surface of the GaInP top cell is reduced, influence of CGB defect on the material quality of thepn junction region of the InGaAs bottom cell is reduced, the short circuit current Jsc and the open circuit voltage Voc of the cell are improved effectively, and the conversion efficiency is higher.
Owner:DR TECH CO LTD YIXING JIANGSU
Method of producing an enforced delimited element and such an element
ActiveUS9156599B2Withstanding stressProtected contentLarge containersBuilding componentsIntermediate cellMechanical engineering
Method of producing an enforced composite surface delimited element such as a wall, ceiling or roof includes: connecting profile elements, preferably of metal and having a length within the interval 200-250 cm, a width within the interval 15-35 cm, and a depth within the interval 18-40 cm, side by side constituting cell modules having passing through cell elements; adding a substance or a material to the modules to bring completing properties to the construction element; and providing the cell modules with an inner and / or outer completely covering layer at the same time adding strength to the surface delimited element. The surface delimited element includes a series of cell modules constituting of profile elements forming intermediate cells, wherein each cell module has a width of at least 30 cm, a depth of at least 18 cm and the cell modules are internally.
Owner:CESIUM
Broad-band-gap reverse three-junction solar cell with heterojunction structure
ActiveCN104393090AIncrease reflectionImprove passivation effectPhotovoltaic energy generationSemiconductor devicesHeterojunctionContact layer
The invention discloses a broad-band-gap reverse three-junction solar cell with a heterojunction structure. The broad-band-gap reverse three-junction solar cell contains a substrate, a buffer layer, a bottom cell, an ultra-broad band gap tunnel junction, an intermediate cell, a broad-band-gap tunnel junction, a top cell and a contact layer, wherein the parts are successively arranged from the bottom layer to the top layer according to a growth direction. The bottom cell is a AlGaInP cell, the intermediate cell is a AlGaAs-GaInP heterojunction cell, and the top cell is a GaAs cell. The intermediate cell Zn-doped AlxGaAs as a base region and Si-doped GayInP as an emitter region, wherein the x is larger than or equal to 0.05 and is less than or equal to 0.45 and the y is larger than or equal to 0.48 and is less than or equal to 0.54. The back field of the bottom cell uses the gradient Zn-doped AlzGaInP, wherein the z is larger than or equal to 0.13 and is less than or equal to 0.5. According to the broad-band-gap reverse three-junction solar cell with the heterojunction structure, the interface recombination rate can be reduced and thus a high-quality cell material can be obtained. Meanwhile, the cell short-circuit current density and the open-circuit voltage can be improved.
Owner:SHANGHAI INST OF SPACE POWER SOURCES
Apparatus and method of loading lens-fitted photo film unit with photo film
InactiveUS6061898AMaximum number can be maximizedAutomate processingAutomatic control devicesAssembly machinesCamera lensRobot hand
An apparatus for assembling a photo film unit has a dark box, which has supply openings into which parts are supplied, and an exit opening from which the body loaded with the photo film is exited. Intermediate cells of the dark box shield ambient light and include interlocked outer shutter plates and inner shutter plates which are disposed in the supply openings and the exit opening. A cassette supplying loader and a robot hand transfer the cassette into the dark box, while a leading tongue of the photo film is protruded from the cassette shell, with a remaining portion of the photo film contained as a roll. A roll forming fork device winds the photo film to a predetermined length from the cassette and forms the photo film into the roll. A photo film mounting mechanism swings the roll and the cassette shell together to change orientation thereof, and loads the roll and the cassette shell into the body.
Owner:FUJIFILM CORP
Tissue culture method of taxus cuspidata
InactiveCN106135002AImprove survival rateImprove proliferative abilityHorticulture methodsPlant tissue cultureIntermediate cellSeedling
The invention discloses a tissue culture method of taxus cuspidata. The method includes the following steps that 1, intermediate cells of a newborn branch of taxus cuspidata are selected and treated into a 2 cm tissue slice, the tissue slice is disinfected and then cultured for 15-20 days in a B5 culture medium to form 10-12 cm tissue, and the 5-6 cm part in the middle is selected for the next step of culture; 2, the callus is transplanted into a rooting culture medium for rooting culture, a dark environment is kept in the first three days, and the illumination time of 12-14 h / d is kept three days later till 3 cm main roots emerge. According to the tissue culture method of taxus cuspidata, the intermediate cells of the newborn branch of taxus cuspidata are selected, contain rich taxol and have high proliferation capability, so that the tissue culture period of taxus cuspidata is short, and the survival rate is high; the selected culture medium is simple, easy to obtain and suitable for large-scale culture of taxus cuspidata seedlings.
Owner:夏学云
Three-junction cascade solar cell and manufacturing method thereof
ActiveCN103258908ARealize segmental absorption and utilizationImprove battery efficiencyFinal product manufacturePhotovoltaic energy generationHigh cellOrganometallic chemistry
The invention relates to the technical field of solar energy, in particular to a three-junction cascade solar cell and a manufacturing method thereof. The manufacturing method comprises the following steps that a GaAs1-x-yNxBiy bottom cell layer, a first tunnel junction, an InmGa1-mAs1-nNn intermediate cell layer, a second tunnel junction, an AlpGa1-p-qInqP top cell layer and a GaAs contact layer grow sequentially on a GaAs substrate through adoption of an organometallic chemical vapor deposition method; ohmic electrodes are manufactured at the bottom of the GaAs substrate and the top of the GaAs contact layer. The invention further provides a structure of the solar cell. According to the three-junction cascade solar cell and the manufacturing method, subsection absorption and utilization of solar spectra and current matching of cells are achieved, the cell layers are matched with GaAs lattices, high cell efficiency can be obtained, and the three-junction cascade solar cell is a potential and ideal solar cell material.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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