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Three connection solar cell having reflection layer and manufacturing method therefor

A technology for solar cells and reflective layers, applied in final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as slow progress, increased free path of non-equilibrium carriers, and lattice constant mismatch

Active Publication Date: 2009-03-18
XIAMEN CHANGELIGHT CO LTD
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Problems solved by technology

In addition, people have theoretically designed 4-junction and 5-junction stacked photovoltaic cells, and given the theoretical efficiency, expected efficiency and experimental efficiency of multi-junction photovoltaic cells, but the progress has been slow in recent years.
An important reason for this result is that in order to fully absorb sunlight, the thickness of the battery material is too thick, which increases the free path of the non-equilibrium carriers and seriously reduces the battery efficiency.
Moreover, the adjustment of the band gap also brings about the mismatch of the lattice constant, and the existence of internal stress reduces the reliability of the battery.

Method used

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  • Three connection solar cell having reflection layer and manufacturing method therefor

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Embodiment Construction

[0023] Such as figure 1 Shown is a triple-junction solar cell with a reflective layer disclosed in the present invention. The semiconductor material layer of the triple-junction solar cell (bottom cell, middle cell and top cell) comprising two sets of Bragg reflectors (DBR) is grown on a P-Ge substrate. The two sets of Bragg reflectors (DBR) are a set of aluminum indium phosphide AlInP / aluminum gallium indium phosphide AlGaInP top cell reflector 20 for reflecting short-wave photons and a set of aluminum arsenide AlAs / aluminum gallium arsenide AlGaAs for reflecting medium-wave photons Battery reflective layer 14.

[0024] The specific structure and manufacture are as follows, each growth is using metal-organic vapor deposition MOCVD technology.

[0025] P diffusion is performed on the P-Ge substrate at 500-700° C. to form a P-Ge bottom cell base region / N-Ge bottom cell emitter region 10 .

[0026] Due to the use of P diffusion, N-GaInP is used as the bottom cell window layer...

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Abstract

The invention discloses a triple-junction solar cell with a reflecting layer and a production method thereof, wherein a semiconductor material layer of the triple-junction solar cell which comprises two sets of Bragg reflecting layers (DBR) is grown on a P-Ge substrata, and the two sets of Bragg reflecting layers (DBR) are respectively a set of AlInP / AlGaInP top cell reflecting layer which is used to reflect shortwave photons and a set of AlAs / AlGaAs intermediate cell reflecting layer which is used to reflect intermediate-wave photons. The structure can reduce the thickness of the cell, reduces the free path of non-equilibrium carriers, and increases the efficiency of photo-electronic conversion.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to the structure and manufacturing method of a triple-junction solar cell applied in space and on the ground. Background technique [0002] Solar energy is a kind of new energy and renewable energy, which has unique advantages and huge potential for development and utilization, which has been fully recognized by people. The solar radiation energy is directly converted into electrical energy through a conversion device. The photoelectric conversion device usually uses the photovoltaic effect principle of a semiconductor device to perform photoelectric conversion. Solar photovoltaic technology has developed rapidly. [0003] In recent years, photoelectric conversion technology represented by photovoltaic technology has developed rapidly, new technologies have emerged, and battery efficiency has continued to improve. The research on multi-junction stacked photovoltaic cells is ev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/052H01L31/0232H01L31/18H01L31/054
CPCY02E10/52Y02P70/50
Inventor 张银桥蔡建九张双翔王向武
Owner XIAMEN CHANGELIGHT CO LTD
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