GaInP/GaAs/InGaAs three-junction film solar cell

A thin-film solar cell and battery technology, applied in the field of solar cells, can solve problems such as cell gaps, and achieve the effects of reducing defect density, reducing compound current, and increasing short-circuit current.
CN109950337APending Publication Date: 2019-06-28DR TECH CO LTD YIXING JIANGSU
0 Cites 3 Cited by

Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
DR TECH CO LTD YIXING JIANGSU
Publication Date
2019-06-28

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a GaInP / GaAs / InGaAs three-junction film solar cell which comprises a GaInP top cell, a GaAs intermediate cell and an InGaAs bottom cell successively along the light incident direction. The GaInP top cell and GaAs intermediate cell are provided with a first tunneling junction; and a second tunneling junction and a crystal graded buffer (CGB) layer is arranged between the GaAsintermediate cell and InGaAs bottom cell successively. Each of the GaInP top cell, GaAs intermediate cell and InGaAs bottom cell uses an nP+ heterojunction structure, and compared with a traditionalGaInP / GaAs / InGaAs three-junction film solar cell with an N+p structure, the area of metal grids in the surface of the GaInP top cell is reduced, influence of CGB defect on the material quality of thepn junction region of the InGaAs bottom cell is reduced, the short circuit current Jsc and the open circuit voltage Voc of the cell are improved effectively, and the conversion efficiency is higher.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present disclosure relates to the field of solar cells, in particular to a structural design of a GaInP / GaAs / InGaAs triple-junction thin-film solar cell. Background technique

[0002] III-V compound semiconductor solar cells represented by GaAs can be prepared into thin-film cells by epitaxy and post-exfoliation method. Compared with Ge-based / Si-based solar cells, they have higher power / mass ratio and flexible and bendable advantages. It has irreplaceable advantages in application fields such as aerospace, long-stay drones, and portable power supplies. Theoretically, III-V compound solar cells can be designed into various structures of 1~n junction (n>4), but from the perspective of efficiency / cost ratio, GaInP / GaAs / InGaAs triple-junction thin-film solar cells are currently the most widely used solar cells. One of many structures.

[0003] The traditional design of the three sub-cells of the GaInP / GaAs / InGaAs triple-junction thin-film solar ce...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More