477 results about "Metal grid" patented technology

The invention relates to the technical field of flexible transparent electrodes, in particular to a Cu / Al laminated metal grid flexible transparent electrode and a preparation method thereof. The Cu / Al laminated metal grid flexible transparent electrode comprises a flexible substrate, a copper layer arranged on the flexible substrate and an aluminum layer arranged on the copper layer, and the aluminum layer located on the outer layer spontaneously forms an Al2O3 passivation layer with the thickness of 2-5 nm in air. The Al2O3 passivation layer can effectively prevent oxygen and moisture from permeating inwards, so that oxidation of the copper layer in a humid or high-temperature environment is fundamentally inhibited, long-term stability of the electrical property of the electrode is ensured, and meanwhile, due to the fact that the thickness of the copper layer is 150-250 nm, excellent conductivity is provided, and low square resistance is achieved; the latticed structure maintains high light transmittance of the electrode while ensuring a high conductive path. Finally, the structure has excellent oxidation resistance, high light transmittance, low sheet resistance and flexible stability under the support of a flexible transparent substrate with the thickness of 50-200 [mu] m, and meets the harsh requirements of a new generation of flexible optoelectronic devices on electrode performance.

The invention relates to the technical field of lead-acid batteries, and particularly discloses a graphene-based composite material as well as a preparation method and application thereof. The graphene-based composite material comprises a graphene-CNTs three-dimensional composite skeleton, and tin dioxide and titanium dioxide which are loaded on the graphene-CNTs three-dimensional composite skeleton. In the material provided by the invention, the graphene-CNTs three-dimensional composite skeleton has excellent conductivity and mechanical strength, so that the resistivity of a negative plate is remarkably reduced, structural support is provided, and the binding force of lead powder and a negative electrode metal plate grid is enhanced, thereby reducing the falling of active substances and improving the cycling stability of the battery; meanwhile, tin dioxide and titanium dioxide are introduced into the graphene-based composite material and form a multi-stage synergistic system with the graphene-CNTs three-dimensional composite framework, so that the problems that the negative electrode of the lead-acid battery is easy to separate hydrogen, the conductivity is insufficient and active substances fall off can be effectively solved, and the cycle performance of the battery is remarkably improved.

The invention discloses a high-efficiency transmission and reflection polarization conversion metasurface, which belongs to the technical field of electromagnetic wave regulation and control, and is characterized in that a plurality of transmission and polarization conversion metal structure layers arranged in an array are arranged between a first dielectric substrate and a second dielectric substrate; the top of the third dielectric substrate is correspondingly provided with a plurality of reflective polarization conversion metal structure layers which are arranged in an array; an air layer is arranged between the second dielectric substrate and the third dielectric substrate; the bottom of the first layer dielectric substrate and the top of the second layer dielectric substrate are respectively and correspondingly provided with metal grids, and a metal grid cavity is formed between every two adjacent metal grids. The metasurface has the functions of transmission polarization conversion and reflection polarization conversion, high-efficiency transmission polarization conversion can guarantee normal communication in a band, high-efficiency reflection polarization conversion can change polarization of radar detection waves, and the metasurface can be used for an embedded antenna cavity antenna housing.

The invention discloses a comprehensive two-dimensional vertical structure metal-semiconductor field effect transistor and a preparation method thereof. A source electrode, a lower isolation layer, a drain electrode and an upper isolation layer which are vertically stacked are formed on the surface of a substrate, an inclined side wall is formed, a channel covers the inclined side wall, a grid electrode and the channel are self-aligned, and a semi-metal grid electrode and a semiconductor channel are in direct contact to form a Schottky junction; based on a comprehensive two-dimensional material system, the Fermi pinning effect and unintentional doping are effectively inhibited, and the performance of the device is optimized by optimizing the grid control capability and the electric contact performance; a gate dielectric layer is not arranged, so that the problems of electrical performance deterioration and the like under a limit miniature scale are avoided; the integration density of the device is improved and the research and development and manufacturing cost is controlled while excellent performance is kept; the channel length and the contact length are synchronously and accurately reduced by utilizing a side wall vertical structure; the method is applied to the industrial application fields of next-generation integrated circuit chips, high-density memories, flexible and wearable electronics and the like which break through the silicon-based physical limit.

The invention relates to the technical field of wireless communication technology, positioning navigation technology and intelligent equipment interaction, in particular to a UWB (Ultra-Wideband) antenna based on metal grid copper, which comprises a transparent flexible substrate with the light transmittance of more than 90%, a metal grid copper layer, a metal grid copper layer and a metal grid copper layer, a copper grid formed on the transparent flexible substrate and configured as a radiator of the UWB antenna; the ultra-wideband chip module is configured to execute receiving, transmitting and processing of ultra-wideband signals and high-precision positioning calculation; the interconnection structure is used for realizing electrical connection between the copper grid and the ultra-wideband chip module; the line width of the copper grid is smaller than 30 microns, and the light transmittance is larger than 80%, so that the UWB antenna has high transparency, and is nearly invisible visually when being attached to carriers such as glass and transparent packages, and the original attractiveness of the carriers is kept; and on the other hand, the transparent flexible substrate supports curved surface attachment and is suitable for special-shaped object identification, and the applicability of the UWB antenna is greatly improved.

The invention provides a back contact solar cell. The back contact solar cell comprises a silicon substrate, a first metal gate line, a second metal gate line, a first passivation layer, a second passivation layer and a protection layer, the first metal grid lines and the second metal grid lines are arranged on the back surface of the silicon substrate, and a protective layer accommodating area is formed between the adjacent first metal grid lines and second metal grid lines at intervals; the first passivation layer is arranged on the front face of the silicon substrate, and the second passivation layer is arranged on the back face of the silicon substrate and located in the protection layer containing area; the protection layer is arranged on the surface, deviating from the silicon substrate, of the first passivation layer, and the orthographic projection of the protection layer on the back surface of the silicon substrate is located in the orthographic projection of the protection layer accommodating area on the back surface of the silicon substrate; the thickness h1 of the protective layer, the distance h2 between one end, far away from the second passivation layer, of the first metal gate line and the second passivation layer, and the distance h3 between one end, far away from the second passivation layer, of the second metal gate line and the second passivation layer meet h1gt; h1, h2, h1gt; h3. After the back contact solar cell is stacked, the metal grid lines on the back surface are not easy to scratch the textured surface on the front surface.

The present disclosure provides a touch display panel and a display device. The touch display panel comprises: a base substrate; a pixel defining layer located on one side of the base substrate, wherein the pixel defining layer defines a plurality of sub-pixels located in a display area; and a first touch metal layer located on the side of the pixel defining layer facing away from the base substrate, wherein the first touch metal layer comprises a plurality of metal grid lines intersecting with each other, the orthographic projection of each metal grid line on the base substrate at least partially overlaps the orthographic projection of the pixel defining layer on the base substrate, the plurality of metal grid lines comprise first metal grid lines, the first metal grid lines also function as a first light shielding layer, and the width of the first light shielding layer is 0.6-1.2 times the width of the pixel defining layer at a corresponding position.

The invention discloses a metal grid transparent conductive film which sequentially comprises a transparent base material layer, a metal grid layer, a transition layer and a protection layer from bottom to top. The manufacturing method comprises the steps of pretreating the transparent base material, preparing the metal seed layer, performing laser direct writing patterning, performing electroplating thickening to form the metal grid layer, preparing the transition layer and the protective layer, and performing performance test and adjustment. The hexagonal honeycomb grid structure and the arc edge design are adopted, and the problem of metal grid electric field concentration is effectively solved; through the arrangement of the transition layer, the interface bonding force of the metal grid is improved; the protection layer and the transition layer cooperate to improve the corrosion resistance of the film; the problems that an existing transparent conductive material is high in cost, poor in flexibility and insufficient in interface compatibility, and an electrochromic device is concentrated in electric field, short in service life and the like are effectively solved, and the transparent conductive material can be widely applied to building intelligent windows, automobile anti-dazzle rearview mirrors, flexible display panels and other electrochromic devices and has important industrial application value.

The invention discloses a TopCon cell and a TopCon cell preparation method, and belongs to the field of solar cells. The structure of the passivation layer is optimized, the doped polycrystalline silicon layer is reserved in the metal contact area, the doped polycrystalline silicon layer and the substrate form a high-low junction to provide field passivation, and ohmic contact is formed between the doped polycrystalline silicon layer and the electrode; a doped polycrystalline silicon carbide layer is arranged in a non-metal contact area, and the doped polycrystalline silicon carbide layer and a substrate form a heterojunction to provide field passivation and serve as a carrier transverse transmission layer. The parasitic absorption of the passivation layer is reduced by removing the doped polycrystalline silicon layer in the non-metal contact region. The light absorption coefficient of the doped polycrystalline silicon carbide layer is low and the doped polycrystalline silicon carbide layer is thin, so that parasitic absorption can be reduced. Ohmic contact is formed between the doped polycrystalline silicon layer in the reserved metal contact area and the electrode, so that low recombination loss can be ensured when the doped polycrystalline silicon layer is in contact with the metal grid line. Field passivation is formed in the metal contact area and the non-metal area, and the passivation effect of the whole surface of the substrate is guaranteed.

A touch sensing structure includes a display panel, a first sensing unit, a second sensing unit, and a third sensing unit. The first sensing unit is disposed on a first side or a second side of the display panel. The second sensing unit and the third sensing unit are disposed on the second side of the display panel. The first sensing unit and the second sensing unit belong to the same layer when the first sensing unit is disposed on the second side of the display panel. Each of the first sensing unit and second sensing unit is composed of plural metal grid units. Each of the metal grid units is shaped as a rhombus and an acute angle of the rhombus is less than 90 degrees.

The invention relates to a curved-surface photovoltaic tile based on a back contact battery and a preparation method thereof, and belongs to the technical field of photovoltaic building integration. The curved-surface photovoltaic tile comprises a curved-surface front hard board and a curved-surface rear board; the solar prefabricated laminated piece is arranged between the curved surface front hard board and the curved surface rear board, the solar prefabricated laminated piece comprises a plurality of photovoltaic cell pieces, and the photovoltaic cell pieces are back contact solar cell pieces, are arranged in the longitudinal direction of the tile and are electrically connected through conductive interconnection strips to form a cell string; wherein at least one of the curved surface front hard plate and the curved surface rear plate is constructed to be a rigid curved surface plate, and the rigid curved surface plate comprises a plurality of bending parts which are connected in sequence. And by utilizing the characteristic that the front surface of the BC battery is free of metal grid lines, the surface of the photovoltaic tile is integrated, the whole is dark or black, the appearance is simple and harmonious, and the photovoltaic tile can be perfectly fused with a traditional roof.

The invention relates to a back contact battery, a preparation method thereof and a photovoltaic module. In the preparation process of the back contact battery, the laser slicing process is completed in any step before the texturing and passivating processes, so that the cut surface damage generated in the cutting process can be repaired in the subsequent texturing and passivating processes; meanwhile, the layout of the metal grid lines in the cutting area is optimized, the distance D1 between the cutting line in the laser slicing and the edge metal grid line closest to the cutting line is smaller than or equal to 0.3 mm, the distance between the edge metal grid line closest to the cutting line and the cutting line is shortened, the effective power generation area of the middle half-cut area is increased, and then the conversion efficiency of the cell is improved.

A CMOS image sensor includes a unit pixel array including a photodiode array, a color filter array, a micro-lens array, and a grid isolation structure laterally separating adjacent color filters. The grid isolation structure includes a first low-n grid, a second low-n grid underlying the first low-n grid, and a metal grid within the second low-n grid, the first low-n grid being narrower than the second low-n grid. The color filter array includes color filter matrixes, all color filter matrixes have the same arrangement pattern. Sizes of color filters in each color filter matrix vary depending on locations of the color filters in the color filter matrix. In an edge portion, a distance between a center of a color filter matrix and a center of a corresponding unit pixel matrix in plan view varies depending on a location of the unit pixel matrix in the CMOS image sensor.

An SPAD with a mesa structure has an etch stop layer that allows a first high-precision etch process that forms substrate contact plugs around the mesa to be combined with a second high-precision etch process that forms a metal grid. The etch stop layer is provided with a first elevation adjacent the substrate contact plugs and a second elevation adjacent the metal grid. The second elevation is greater than the first elevation. In a process, holes for the substrate contact plugs and trenches for the metal grid are etched down to the etch stop layer. After a break-through etch, a third etch process deepens the holes and the trenches to their final depths. The metal grid may land on a second etch stop layer that is absent from an area around the substrate contact plugs. This structure and process provide lower cost SPADs with mesa structures.

The application belongs to the technical field of lead-carbon batteries, and specifically provides a method for preparing a positive plate of a lead-carbon battery by a dry method, the positive plate and the battery. The method comprises the following steps: uniformly mixing material containing lead powder and polytetrafluoroethylene to obtain dry powder; applying the dry powder to both sides of a metal grid, pressing the dry powder, and then immersing the pressed dry powder in an acid solution, and then taking out the pressed dry powder, flattening the pressed dry powder, and solidifying the flattened pressed dry powder. The positive plate prepared by the method can not only improve the stability and consistency of the battery, but also reduce the production energy consumption, provides an experimental basis for breaking through the bottleneck of uniformity of active material in the traditional paste coating process, promotes the industrial application development of the technology in energy storage, and opens up a new idea for the sustainable development of the lead-carbon battery manufacturing industry.

The invention provides a composite metal grid and a preparation method thereof. The preparation method of the composite metal grid comprises the following steps: forming a core mold layer on a substrate; etching through the core mold layer to form a plurality of first grooves; forming a first protection layer, wherein the first protection layer covers the top surface of the core mold layer and the side wall and the bottom surface of the first groove and defines a second groove in the first groove; filling the bottom of the second groove with a first metal layer; trimming the side wall of the second groove above the first metal layer to form a third groove, wherein at least the width of a partial region of the third groove is greater than the width of the first metal layer; filling the bottom of the third groove with a second metal layer; filling the third groove with a second protection layer; and removing the core mold layer and the first protection layer above the core mold layer. Therefore, the problem that the outline of the composite metal grid is not vertical can be solved, and the light transmittance and the light blocking rate of the grid and the quantity of light received by the pixel units are improved. The composite metal grid provided by the invention is prepared by using the preparation method.

This invention discloses a high-gain vehicle-mounted optically transparent antenna with improved radiation pattern, operating in the 0.74-0.87 GHz range. The invention includes a substrate, an antenna body, and a system ground plane. The substrate comprises a PET film layer, an OCA adhesive layer, and a PC dielectric substrate. The antenna body consists of two trapezoidal radiating patches, a reverse cancellation strip, a feed line, and a system ground plane located on the same layer as the antenna. The two trapezoidal radiating patches are connected by the reverse cancellation strip, which links their longer base edges. Its transparency is primarily achieved through the use of a transparent substrate material and a metal mesh structure composed of thin and fine metal wires. The cascaded trapezoidal radiating patches and the connected reverse radiation strip achieve performance improvements such as high gain, wide bandwidth, and improved horizontal radiation pattern nulls. This invention can achieve optical transparency of over 70%, radiation efficiency of over 65%, and radiation pattern null improvement of over 3 dB in the operating frequency band.

The utility model relates to the technical field of tool cleaning auxiliary equipment, and discloses a tool storage rack for a tool cleaning device, the tool storage rack comprises a tray and a storage rack main body, the storage rack main body is arranged in a cage shape and covers the tray, a connecting assembly is arranged between the tray and the storage rack main body, and a plurality of positioning protrusions are arrayed on the surface of the tray; the top of each positioning protrusion is concavely provided with an inserting groove used for being connected with the handle portion of a cutter in a clamped mode, a horizontally-arranged metal grid plate is arranged in the storage rack body, receding holes corresponding to the positioning protrusions are evenly distributed in the metal grid plate, and the tops of the cutters penetrate out of the receding holes. The cutter storage rack has the effect of improving the cutter fixing stability.

The invention belongs to the field of protective films, and relates to an acrylic protective film for a metal grid touch sensor, the acrylic protective film comprises an acrylic acid adhesive layer, the acrylic acid adhesive layer comprises the following substances by weight: 100 parts of acrylic resin, 2-6 parts of a curing agent, 0.05-0.5 part of a catalyst, 2-6 parts of a retarder, 1-10 parts of a plasticizer, 0.1-0.5 part of a leveling agent, and 110-120 parts of a solvent. According to the technical scheme, the problems that after a protective film is attached to the metal grid sensor, adhesive residues are prone to occurring, and the dyne value of the surface is reduced are effectively solved, and the better subsequent ink printing effect is achieved.

The present invention is provided with: a fixed contact (24b); a movable contact (25b) that comes into contact with and separates from the fixed contact (24b) in accordance with the rotational movement of the rod-shaped movable contact (22b); and a metal grid (26b) disposed so as to face the fixed contact (24b) in a second direction that is orthogonal to a first direction, which is the movement direction of the movable contact (25b), and that is along the longitudinal direction of the movable contact (22b). The grid (26b) returns, to the periphery of the movable contact (25b) and the fixed contact (24b), an air flow that flows from the movable contact (25b) and the fixed contact (24b) toward the grid (26b) in the second direction, said air flow being generated between the movable contact (25b) and the fixed contact (24b) during a pole opening operation in which the fixed contact (24b) and the movable contact (25b) are separated from each other.

The invention discloses multi-component alloy electrode plasma surface modification treatment equipment, and particularly relates to the field of plasma surface modification treatment.The equipment comprises a vacuum cavity, a box door is arranged on the outer side of the vacuum cavity, and an inflation mechanism, a vacuum mechanism and a waste gas treatment mechanism are arranged on the outer side of the vacuum cavity; a detection mechanism, an electrifying mechanism and a limiting mechanism are mounted in the vacuum cavity, and the limiting mechanism comprises a metal grid plate. Through the arrangement of the detection mechanism and the limiting mechanism, ions in the plasma are controlled to move within a certain range by utilizing an electric field force generated by bias voltage, so that the generation rate of the ions in the plasma is not influenced while gas in the vacuum cavity is exhausted, and meanwhile, according to the concave-convex condition of the surface of a material, the plasma can be accurately detected. The ion spraying rate and the ion generation rate are controlled, the working time of the device is shortened, and the working efficiency of the device is improved.

The invention discloses a plasma electrospray fusion ionization source and mass spectrum combined system and a detection method. The plasma electrospray fusion ionization source and mass spectrum combined system comprises a coaxially nested electrospray needle, a sample injector, an ultrahigh voltage generator, a grounded metal grid mesh, a mass spectrometer and a detector thereof. A grounded metal grid is installed between a spray needle and a mass spectrum inlet, voltage is applied to the spray needle, carrier gas is excited to generate plasmas, the macroscopic plasmas at the front end of the spray needle are fused with electrospray, and the plasmas and micro-droplets at the tip of the spray needle are fused. According to the unique ionization source constructed by the plasma-micro-droplet fusion system, on one hand, the ionization efficiency is improved, mass spectrum signals are enhanced, the application range of analytes is widened, excellent sensitivity to high-polarity compounds is kept, and effective ionization and detection of low-polarity compounds are achieved; on the other hand, higher energy and active species are provided for the micro-droplet reaction, the energy barrier required by traditional synthesis is broken, and efficient spontaneous product generation of the micro-droplet chemical reaction is achieved.

The invention provides an arc extinguishing system of an electric switch, which at least comprises an insulating shell, and a power supply wiring end, a load wiring end, a moving contact device, a static contact device and an arc extinguishing chamber which are arranged in the insulating shell, at least six metal grid sheets are arranged in the arc extinguishing chamber, the arc extinguishing chamber is arranged at the bottom of the insulating shell, and at least part of the opening of the arc extinguishing chamber is upward; or all or part of the opening faces the moving contact device and the static contact device, the contact end is provided with an alloy contact and a static contact arc striking sheet, and the static contact arc striking sheet extends towards the left side and forms an acute angle with the X axis; the at least one metal gate sheet of the arc starting end is arranged close to or close to the conductor of the power supply wiring end or the power supply extension conductor, and the at least one metal gate sheet of the arc ending end is arranged close to or close to the conductor of the load wiring end or the load extension conductor. And an extension line, extending leftwards, of the static contact arc striking sheet extends towards the direction or the periphery of the arc striking end of the electric arc.

The present disclosure provides a touch structure, a display panel and a touch display device. The touch structure comprises: a metal grid comprising a plurality of metal wires; wherein the metal grid has a plurality of open units, each of the open units comprises at least three openings, each of the openings is surrounded by a plurality of metal wires, and the plurality of metal wires surrounding each of the openings has at least three different extension directions; at least one of the metal wires used to divide the openings in the open unit is different from the extension direction of each of the metal wires surrounding the outer boundary of the open unit.

The invention relates to a multilayer metal stack for active and black pixel regions of an image sensor and a method thereof. An image sensor comprises an active pixel photodiode, a black pixel photodiode, a metal grid structure and a light shield. Each of the active pixel photodiode and the black pixel photodiode is disposed in a semiconductor material having a first side and a second side opposite the first side. The first side of the semiconductor material is disposed between the light shield and the black pixel photodiode. The metal grid structure includes a first multilayer metal stack including a first metal and a second metal different from the first metal. The light shield includes a second multilayer stack including the first metal and the second metal. A first thickness of the first multilayer metal stack is less than a second thickness of the second multilayer metal stack.

Provided is a metal mesh, comprising, intersecting each other, a plurality of first wires and a plurality of second wires, wherein intersection points of the plurality of first wires and the plurality of second wires are arranged in an array, and any two adjacent first wires and any two adjacent second wires enclose a mesh. For any intersection point, a first adjacent intersection point adjacent to the intersection point is present on the first wire where the intersection point is located, a second adjacent intersection point adjacent to the intersection point is present on the second wire where the intersection point is located, and the distance from the intersection point to the first adjacent intersection point and the distance from the intersection point to the second adjacent intersection point are different from each other.

The present application belongs to the field of perovskite / crystalline silicon tandem cells. Disclosed are a perovskite / crystalline silicon tandem cell and a preparation method therefor. The perovskite / crystalline silicon tandem cell comprises a bottom cell and a top cell, wherein the bottom cell uses a crystalline silicon wafer as a substrate, an interface passivation layer, a first doped silicon layer, a first transparent conductive oxide film layer and a metal conductive film layer are sequentially provided on the back surface of the bottom cell, and an interface passivation layer, a second doped silicon layer and an intermediate composite layer are sequentially provided on the front surface of the bottom cell; the top cell uses a perovskite light-absorbing layer as a light-absorbing layer, a first carrier transport layer is provided on the back surface, and a second carrier transport layer, a second transparent conductive oxide film layer and a metal grid line electrode are sequentially provided on the front surface; and an amorphous germanium layer is provided between the second doped silicon layer and the intermediate composite layer, thereby enhancing the tunneling conductivity between the second doped silicon layer and the intermediate composite layer, reducing the interfacial contact resistance, and improving the FF and conversion efficiency of the cell.

The utility model discloses a combined rubber shock pad which comprises a shock-absorbing base plate, a shock-absorbing top plate is fixedly arranged at the top of the shock-absorbing base plate, a shock-absorbing bottom plate is fixedly arranged at the bottom of the shock-absorbing base plate, a metal grid is fixedly arranged between the shock-absorbing base plate and the shock-absorbing bottom plate, a shock-absorbing groove is formed in the shock-absorbing base plate, and the shock-absorbing bottom plate is fixedly arranged in the shock-absorbing groove. And an air flow groove is formed in the metal grid. According to the combined type rubber shock pad, the strength and stability of the shock pad can be enhanced through the metal grids arranged in the combined type rubber shock pad, meanwhile, the bearing capacity of the shock pad is improved, and when the combined type rubber shock pad is pressed, the movable plate, the movable rods and the damping springs slide downwards in the shock absorption grooves formed in the shock absorption base plate; according to the rubber combined pad, the vibration energy can be absorbed and reduced, meanwhile, the movable rods can press downwards towards the air flow grooves, internal air can be exhausted outwards through the air holes, and therefore the buffering effect is achieved, and the damping effect of the rubber combined pad can be effectively improved through assistance of the parts.

The utility model relates to the technical field of mine mining equipment, in particular to a prefabricated plate wall module for blocking a metal mine laneway, which comprises a first metal grid screen, impermeable cloth and a metal support frame arranged on the lower side of the first metal grid screen. The anti-seepage cloth is tightly attached between the first metal grid screen and the metal supporting frame. The roadway opening is blocked through the prefabricated plate wall module, the underground construction period is shortened through ground prefabrication, and the operation risk is reduced; the compression resistance, the tensile resistance, the bending resistance and the deformation resistance of the plate wall are enhanced through the metal supporting frame; the geotextile anti-seepage cloth blocks a water source, the service life is prolonged, and a reliable scheme is provided for mine laneway plugging.

The invention relates to the field of solar cells, in particular to a method for manufacturing a metalized grid line of a photovoltaic solar cell, which comprises the following steps of: sequentially depositing an intrinsic amorphous silicon layer, an n-type amorphous silicon layer and a p-type amorphous silicon layer on an n-type silicon substrate, and respectively depositing TCO (Transparent Conductive Oxide) layers on the n-type amorphous silicon layer and the p-type amorphous silicon layer; depositing a barrier layer on the TCO layer, and depositing a seed layer on the barrier layer; a pattern of a metal grid line is accurately printed on the seed layer through the ink-jet printing technology, an ink-jet printing material is a hot melting material, a mask layer is formed, the mask layer covers a non-grid-line area, and the portion, at the grid line position, of the seed layer is exposed; electroplating copper on the surface of the exposed seed layer; removing the mask layer and the seed layer and the barrier layer covered by the mask layer by using a chemical corrosive liquid to expose the grid line on the surface of the cell; and carrying out subsequent treatment on the electroplated grid line. The method has the following advantages: 1, the cost is reduced; 2, the conductivity is improved; and 3, the process is simplified. And 4, high precision.