687 results about "Metal grid" patented technology

The invention relates to the technical field of solar cells, and provides a laminated cell and a manufacturing method thereof, which are at least beneficial to improving the efficiency of the laminated cell. The laminated cell comprises a crystalline silicon bottom cell, a middle layer and a perovskite top cell which are sequentially laminated in a preset direction, the middle layer comprises a conductive composite layer, the conductive composite layer is located on the surface, facing the perovskite top cell, of the crystalline silicon bottom cell, and materials of the conductive composite layer comprise a conductive polymer and a metal dopant; the metal grid layer is embedded into one side, far away from the crystalline silicon bottom battery, of the conductive composite layer, and the conductive composite layer exposes the surface, far away from the conductive composite layer, of the metal grid layer; the barrier layer is located on the side, away from the composite layer, of the metal grid layer and covers the surfaces of the metal grid layer and the conductive composite layer.

The invention discloses a wearable medical monitoring equipment electrode which is composed of a layered structure and comprises a transparent flexible substrate layer which is made of a biocompatible flexible polymer material and is used for providing flexible support and isolating a metal electrode from the skin; the metal grid copper transparent electrode layer is formed on the surface of the transparent flexible substrate layer through a yellow light etching micro-nano processing technology; the conductive gel layer uniformly covers the surface of the metal grid copper electrode layer; the encapsulation layer is formed by spin-coating a polymethyl methacrylate solution on the surface of the conductive gel layer and forming a transparent protection layer after curing; the gradient line width bionic honeycomb-shaped copper grid design is adopted, the light transmittance is kept, meanwhile, the collection efficiency of physiological electric signals is remarkably improved, signal transmission loss is reduced, through the polyacrylamide and nanocellulose composite gel formula and micro-channel dynamic humidity adjustment, signal stability under long-term wearing is ensured, and the application range is wide. The problem of signal distortion caused by dryness of traditional gel is solved.

The embodiment of the invention provides a conductive film, a metal grid touch screen sensor, a touch module and a preparation method of the conductive film. The problem that in the prior art, a conductive film is prone to breakage after being bent for multiple times is solved. The conductive film includes a substrate layer, a first conductive layer, and a first outer blackening layer. The substrate layer is provided with a first surface and a second surface which are oppositely arranged along the thickness direction of the substrate layer; the first conductive layer comprises a plurality of first conductive sub-layers, the plurality of first conductive sub-layers are sequentially stacked on the first surface of the substrate layer, the thickness of each first conductive sub-layer is smaller than a first preset value, and the number of the first conductive sub-layers is larger than a second preset value; the first outer blackening layer is stacked on the first conductive sub-layer on the outermost layer. The touch module prepared from the conductive film provided by the embodiment of the invention has the advantages of good fracture resistance and high visual quality.

The current collector comprises a bipolar plate, the bipolar plate comprises a disc and a circular ring, the circular ring surrounds the periphery of the disc, one or more alkali liquor inlets are formed in the first end of the circular ring, and one or more alkali liquor outlets are formed in the second end of the circular ring; the flow field material is arranged on the disc, and the flow field material comprises a plurality of expansion metal grid plates which are sequentially arranged at intervals. The manufacturing method comprises the steps that the diameter of a disc is obtained, and the length and the width of each expansion metal grid plate are determined according to the diameter of the disc, the preset number of the expansion metal grid plates and the preset distance between the adjacent expansion metal grid plates; according to the length and the width of each expansion metal grid plate and the edge contour of the corresponding disc, the raw material is cut to obtain a preset number of expansion metal grid plates; and according to the preset position of each expansion metal grid plate on the disc, the expansion metal grid plates are welded to the disc. According to the invention, the uniformity of the alkali liquor distributed on the bipolar plate can be improved.

The invention relates to the technical field of flexible transparent electrodes, in particular to a Cu / Al laminated metal grid flexible transparent electrode and a preparation method thereof. The Cu / Al laminated metal grid flexible transparent electrode comprises a flexible substrate, a copper layer arranged on the flexible substrate and an aluminum layer arranged on the copper layer, and the aluminum layer located on the outer layer spontaneously forms an Al2O3 passivation layer with the thickness of 2-5 nm in air. The Al2O3 passivation layer can effectively prevent oxygen and moisture from permeating inwards, so that oxidation of the copper layer in a humid or high-temperature environment is fundamentally inhibited, long-term stability of the electrical property of the electrode is ensured, and meanwhile, due to the fact that the thickness of the copper layer is 150-250 nm, excellent conductivity is provided, and low square resistance is achieved; the latticed structure maintains high light transmittance of the electrode while ensuring a high conductive path. Finally, the structure has excellent oxidation resistance, high light transmittance, low sheet resistance and flexible stability under the support of a flexible transparent substrate with the thickness of 50-200 [mu] m, and meets the harsh requirements of a new generation of flexible optoelectronic devices on electrode performance.

The invention relates to the technical field of lead-acid batteries, and particularly discloses a graphene-based composite material as well as a preparation method and application thereof. The graphene-based composite material comprises a graphene-CNTs three-dimensional composite skeleton, and tin dioxide and titanium dioxide which are loaded on the graphene-CNTs three-dimensional composite skeleton. In the material provided by the invention, the graphene-CNTs three-dimensional composite skeleton has excellent conductivity and mechanical strength, so that the resistivity of a negative plate is remarkably reduced, structural support is provided, and the binding force of lead powder and a negative electrode metal plate grid is enhanced, thereby reducing the falling of active substances and improving the cycling stability of the battery; meanwhile, tin dioxide and titanium dioxide are introduced into the graphene-based composite material and form a multi-stage synergistic system with the graphene-CNTs three-dimensional composite framework, so that the problems that the negative electrode of the lead-acid battery is easy to separate hydrogen, the conductivity is insufficient and active substances fall off can be effectively solved, and the cycle performance of the battery is remarkably improved.

The invention discloses a high-efficiency transmission and reflection polarization conversion metasurface, which belongs to the technical field of electromagnetic wave regulation and control, and is characterized in that a plurality of transmission and polarization conversion metal structure layers arranged in an array are arranged between a first dielectric substrate and a second dielectric substrate; the top of the third dielectric substrate is correspondingly provided with a plurality of reflective polarization conversion metal structure layers which are arranged in an array; an air layer is arranged between the second dielectric substrate and the third dielectric substrate; the bottom of the first layer dielectric substrate and the top of the second layer dielectric substrate are respectively and correspondingly provided with metal grids, and a metal grid cavity is formed between every two adjacent metal grids. The metasurface has the functions of transmission polarization conversion and reflection polarization conversion, high-efficiency transmission polarization conversion can guarantee normal communication in a band, high-efficiency reflection polarization conversion can change polarization of radar detection waves, and the metasurface can be used for an embedded antenna cavity antenna housing.

The invention discloses a comprehensive two-dimensional vertical structure metal-semiconductor field effect transistor and a preparation method thereof. A source electrode, a lower isolation layer, a drain electrode and an upper isolation layer which are vertically stacked are formed on the surface of a substrate, an inclined side wall is formed, a channel covers the inclined side wall, a grid electrode and the channel are self-aligned, and a semi-metal grid electrode and a semiconductor channel are in direct contact to form a Schottky junction; based on a comprehensive two-dimensional material system, the Fermi pinning effect and unintentional doping are effectively inhibited, and the performance of the device is optimized by optimizing the grid control capability and the electric contact performance; a gate dielectric layer is not arranged, so that the problems of electrical performance deterioration and the like under a limit miniature scale are avoided; the integration density of the device is improved and the research and development and manufacturing cost is controlled while excellent performance is kept; the channel length and the contact length are synchronously and accurately reduced by utilizing a side wall vertical structure; the method is applied to the industrial application fields of next-generation integrated circuit chips, high-density memories, flexible and wearable electronics and the like which break through the silicon-based physical limit.

The invention relates to the technical field of wireless communication technology, positioning navigation technology and intelligent equipment interaction, in particular to a UWB (Ultra-Wideband) antenna based on metal grid copper, which comprises a transparent flexible substrate with the light transmittance of more than 90%, a metal grid copper layer, a metal grid copper layer and a metal grid copper layer, a copper grid formed on the transparent flexible substrate and configured as a radiator of the UWB antenna; the ultra-wideband chip module is configured to execute receiving, transmitting and processing of ultra-wideband signals and high-precision positioning calculation; the interconnection structure is used for realizing electrical connection between the copper grid and the ultra-wideband chip module; the line width of the copper grid is smaller than 30 microns, and the light transmittance is larger than 80%, so that the UWB antenna has high transparency, and is nearly invisible visually when being attached to carriers such as glass and transparent packages, and the original attractiveness of the carriers is kept; and on the other hand, the transparent flexible substrate supports curved surface attachment and is suitable for special-shaped object identification, and the applicability of the UWB antenna is greatly improved.

The invention provides a perovskite quantum dot perovskite thin film laminated solar cell structure and a preparation method thereof, and belongs to the technical field of perovskite laminated solar cells. Comprising a perovskite quantum dot top cell and a perovskite thin film bottom cell. The perovskite quantum dot perovskite thin film laminated solar cell structurally comprises a glass substrate, a transparent conductive film layer, a hole transport layer, a perovskite thin film layer, an electron transport layer, a buffer layer, a middle layer, a hole transport layer, a perovskite quantum dot layer, an electron transport layer, a buffer layer, a transparent electrode and a metal grid line electrode from bottom to top in sequence. According to the perovskite quantum dot perovskite thin film laminated solar cell prepared by the invention, the light absorption spectrum range is widened and the photoelectric conversion efficiency is improved through the laminated structure. The perovskite quantum dot perovskite thin film laminated solar cell prepared by the invention is simple in preparation method, low in cost and easy for large-scale preparation, and has remarkable commercial potential.

The invention provides a back contact solar cell. The back contact solar cell comprises a silicon substrate, a first metal gate line, a second metal gate line, a first passivation layer, a second passivation layer and a protection layer, the first metal grid lines and the second metal grid lines are arranged on the back surface of the silicon substrate, and a protective layer accommodating area is formed between the adjacent first metal grid lines and second metal grid lines at intervals; the first passivation layer is arranged on the front face of the silicon substrate, and the second passivation layer is arranged on the back face of the silicon substrate and located in the protection layer containing area; the protection layer is arranged on the surface, deviating from the silicon substrate, of the first passivation layer, and the orthographic projection of the protection layer on the back surface of the silicon substrate is located in the orthographic projection of the protection layer accommodating area on the back surface of the silicon substrate; the thickness h1 of the protective layer, the distance h2 between one end, far away from the second passivation layer, of the first metal gate line and the second passivation layer, and the distance h3 between one end, far away from the second passivation layer, of the second metal gate line and the second passivation layer meet h1gt; h1, h2, h1gt; h3. After the back contact solar cell is stacked, the metal grid lines on the back surface are not easy to scratch the textured surface on the front surface.

The present disclosure provides a touch display panel and a display device. The touch display panel comprises: a base substrate; a pixel defining layer located on one side of the base substrate, wherein the pixel defining layer defines a plurality of sub-pixels located in a display area; and a first touch metal layer located on the side of the pixel defining layer facing away from the base substrate, wherein the first touch metal layer comprises a plurality of metal grid lines intersecting with each other, the orthographic projection of each metal grid line on the base substrate at least partially overlaps the orthographic projection of the pixel defining layer on the base substrate, the plurality of metal grid lines comprise first metal grid lines, the first metal grid lines also function as a first light shielding layer, and the width of the first light shielding layer is 0.6-1.2 times the width of the pixel defining layer at a corresponding position.

The invention discloses a metal grid transparent conductive film which sequentially comprises a transparent base material layer, a metal grid layer, a transition layer and a protection layer from bottom to top. The manufacturing method comprises the steps of pretreating the transparent base material, preparing the metal seed layer, performing laser direct writing patterning, performing electroplating thickening to form the metal grid layer, preparing the transition layer and the protective layer, and performing performance test and adjustment. The hexagonal honeycomb grid structure and the arc edge design are adopted, and the problem of metal grid electric field concentration is effectively solved; through the arrangement of the transition layer, the interface bonding force of the metal grid is improved; the protection layer and the transition layer cooperate to improve the corrosion resistance of the film; the problems that an existing transparent conductive material is high in cost, poor in flexibility and insufficient in interface compatibility, and an electrochromic device is concentrated in electric field, short in service life and the like are effectively solved, and the transparent conductive material can be widely applied to building intelligent windows, automobile anti-dazzle rearview mirrors, flexible display panels and other electrochromic devices and has important industrial application value.

The invention discloses a TopCon cell and a TopCon cell preparation method, and belongs to the field of solar cells. The structure of the passivation layer is optimized, the doped polycrystalline silicon layer is reserved in the metal contact area, the doped polycrystalline silicon layer and the substrate form a high-low junction to provide field passivation, and ohmic contact is formed between the doped polycrystalline silicon layer and the electrode; a doped polycrystalline silicon carbide layer is arranged in a non-metal contact area, and the doped polycrystalline silicon carbide layer and a substrate form a heterojunction to provide field passivation and serve as a carrier transverse transmission layer. The parasitic absorption of the passivation layer is reduced by removing the doped polycrystalline silicon layer in the non-metal contact region. The light absorption coefficient of the doped polycrystalline silicon carbide layer is low and the doped polycrystalline silicon carbide layer is thin, so that parasitic absorption can be reduced. Ohmic contact is formed between the doped polycrystalline silicon layer in the reserved metal contact area and the electrode, so that low recombination loss can be ensured when the doped polycrystalline silicon layer is in contact with the metal grid line. Field passivation is formed in the metal contact area and the non-metal area, and the passivation effect of the whole surface of the substrate is guaranteed.

The invention specifically provides a low-cross-polarization ultra-wideband wide-angle scanning low-profile tight coupling phased-array antenna based on metal grid loading, and belongs to the technical field of microwave antennas. The three-order Chebyshev impedance transformer comprises a C-shaped ring metasurface loading wide-angle matching layer, a folded dipole, a double-Y balun, a three-order Chebyshev impedance transformer, a coaxial feed port, a metal floor, a metal grid, a grounding metal sheet, a resistive film, a dielectric layer and a metal chip resistor. Different polarization electromagnetic waves are regulated and controlled through the metal grid, the resistive film is introduced to absorb cross polarization components, the front-to-back ratio is improved, and the cross polarization level is smaller than or equal to-30 dB; the working bandwidth is expanded to 5.6: 1 under the condition that the profile is only 0.09 lambda by combining the size design of the non-uniform unit and the gradient balun feed, and the scanning of the wide angle of + / -60 degrees of an E surface and an H surface is supported. The invention has the advantages of compact structure, high polarization purity and wide-angle stability, and is suitable for 5G / 6G communication, radar and electronic countermeasure systems.

A touch sensing structure includes a display panel, a first sensing unit, a second sensing unit, and a third sensing unit. The first sensing unit is disposed on a first side or a second side of the display panel. The second sensing unit and the third sensing unit are disposed on the second side of the display panel. The first sensing unit and the second sensing unit belong to the same layer when the first sensing unit is disposed on the second side of the display panel. Each of the first sensing unit and second sensing unit is composed of plural metal grid units. Each of the metal grid units is shaped as a rhombus and an acute angle of the rhombus is less than 90 degrees.

The invention discloses a metal grating and a forming method thereof, and aims to solve the problem of optical crosstalk. The metal grating comprises a dielectric layer forming an outer layer structure, and a metal layer which is at least coated on the side wall and filled in the metal grating. The forming method comprises the following steps of: forming a mask layer on a substrate and forming a groove in the mask layer; depositing a dielectric layer on the inner wall of the groove; depositing a metal layer to fill the residual space of the groove and cover the peripheral region to form a laminated structure; and finally, removing the laminated structure part and the mask layer part outside the groove so as to limit the metal grating. Through the formed metal grating, optical crosstalk can be effectively reduced, and the imaging quality and the quantum efficiency are improved.

The invention discloses a submicro-scale self-supporting metal grid flexible transparent electrode and a manufacturing method thereof, and belongs to the technical field of flexible electrode manufacturing. The manufacturing method provided by the invention comprises the following steps: preparing a printing solution, wherein the printing solution contains a polymer, silver nitrate and a solvent; printing a submicro-scale polymer-based seed layer grid structure on the hydrophobic substrate by using an electric field driven spray deposition micro-nano 3D printing technology; performing steam reduction on the surface of the polymer-based seed layer grid structure, and then depositing metal through chemical plating to form a metal grid structure; and stripping from the surface of the hydrophobic substrate. According to the invention, simple, efficient and low-cost manufacturing of the submicro-scale, ultrathin, soft, breathable and substrate-support-free self-supporting metal grid flexible transparent electrode with high photoelectric performance is realized, and the electrode has general applicability in the application fields of electronic skin, flexible sensors, transparent wearable and portable electronic equipment and the like.

The invention provides a transparent antenna lens and intelligent glasses, and belongs to the technical field of intelligent glasses. The antenna transparent substrate is arranged on the lens body. The plurality of first metal structures are arranged on the surface of the antenna transparent substrate and are far away from the lens body, so that the lens body and the transparent antenna are combined and can support each other, and the transparent antenna is arranged on the lens of the glasses. The design space of the transparent antenna is not limited by the size of the glasses legs any more and is far away from the head of the human body, the problem that the electromagnetic performance is low due to the fact that the human body absorbs and scatters electromagnetic waves and is limited by the size is solved, and the electromagnetic performance of the transparent antenna is greatly improved. The multiple first metal structures are connected and surround to form the irregular polygonal metal grid, so that the problems of bright diffraction fringes and dark areas caused by coherent interference generated by the periodic metal grid can be solved, and a user can see a clearer and more accurate image.

The present invention discloses a reflective portable imaging and image processing method for metal mesh defect detection. The method comprises the following steps: constructing a reflective portable imaging system and combining it with a carrying motion device to capture images of the metal mesh in situ; extracting prior information about block defects and broken wire defects from the metal mesh image using a method based on spectral filtering fusion and Hough transform; inputting the captured image and the prior defect information into a low-rank decomposition model to obtain the low-rank portion, sparse portion, and noise portion of the image; and performing threshold segmentation on the sparse portion to extract defects. The method can achieve in-situ imaging measurement of the metal mesh, identify and detect various defects in the metal mesh image, and provide accurate and efficient detection results.

The invention relates to the technical field of photovoltaic cells, and discloses a photovoltaic cell with a selective passivation anti-reflection film on the front side and a preparation method of the photovoltaic cell. The preparation method of the photovoltaic cell comprises the following steps: preparing a first passivation anti-reflection film on a pyramid textured surface on the front surface of a silicon substrate; selectively removing the first passivation anti-reflection film in a non-grid line area; preparing a second passivation anti-reflection film on the front surface of the silicon substrate so as to increase the thickness of the passivation anti-reflection film in a front surface grid line area; preparing a back passivation film; printing first grid line slurry and second grid line slurry on the front grid line area and the back grid line area respectively; sintering to enable the second grid line slurry to locally corrode the back passivation film to form a back metal grid line in contact with the back of the silicon substrate; and after sintering and auxiliary sintering, enabling the first grid line slurry to locally corrode the second passivation anti-reflection film and the first passivation anti-reflection film to form a front metal grid line in contact with the front surface of the silicon substrate. According to the preparation method, the binding force of the front metal grid line can be improved, the grid line is prevented from stripping, and the passivation performance and the open-circuit voltage can be improved.

The invention relates to a curved-surface photovoltaic tile based on a back contact battery and a preparation method thereof, and belongs to the technical field of photovoltaic building integration. The curved-surface photovoltaic tile comprises a curved-surface front hard board and a curved-surface rear board; the solar prefabricated laminated piece is arranged between the curved surface front hard board and the curved surface rear board, the solar prefabricated laminated piece comprises a plurality of photovoltaic cell pieces, and the photovoltaic cell pieces are back contact solar cell pieces, are arranged in the longitudinal direction of the tile and are electrically connected through conductive interconnection strips to form a cell string; wherein at least one of the curved surface front hard plate and the curved surface rear plate is constructed to be a rigid curved surface plate, and the rigid curved surface plate comprises a plurality of bending parts which are connected in sequence. And by utilizing the characteristic that the front surface of the BC battery is free of metal grid lines, the surface of the photovoltaic tile is integrated, the whole is dark or black, the appearance is simple and harmonious, and the photovoltaic tile can be perfectly fused with a traditional roof.

A method of fabricating self-aligned grids in a BSI image sensor is provided. The method includes depositing a first dielectric layer over a back surface of a substrate that has a plurality of photodiodes formed therein, forming a grid of trenches, and filling in the trenches with dielectric material to create a trench isolation grid. Here, a trench passes through the first dielectric layer and extends into the substrate. The method further includes etching back dielectric material in the trenches to a level that is below an upper surface of the first dielectric layer to form recesses overlaying the trench isolation grid, and filling in the recesses with metallic material to create a metallic grid that is aligned with the trench isolation grid.

The invention relates to a back contact battery, a preparation method thereof and a photovoltaic module. In the preparation process of the back contact battery, the laser slicing process is completed in any step before the texturing and passivating processes, so that the cut surface damage generated in the cutting process can be repaired in the subsequent texturing and passivating processes; meanwhile, the layout of the metal grid lines in the cutting area is optimized, the distance D1 between the cutting line in the laser slicing and the edge metal grid line closest to the cutting line is smaller than or equal to 0.3 mm, the distance between the edge metal grid line closest to the cutting line and the cutting line is shortened, the effective power generation area of the middle half-cut area is increased, and then the conversion efficiency of the cell is improved.

The invention discloses an HJT solar cell based on a metal grid copper electrode, which comprises an N-type monocrystalline silicon substrate, the front surface and the back surface of the N-type monocrystalline silicon substrate are respectively textured, an I-type amorphous silicon layer and a P-type amorphous silicon layer are sequentially laminated on the front surface of the N-type monocrystalline silicon substrate, and an I-type amorphous silicon layer and an N-type amorphous silicon layer are sequentially laminated on the back surface of the N-type monocrystalline silicon substrate; the surface of the P-type amorphous silicon layer and the surface of the N-type amorphous silicon layer are both covered with transparent conductive oxide layers, the transparent conductive oxide layers are coated with transparent conductive colloid layers, the transparent conductive colloid layers comprise transparent resin binders and conductive substances dispersed in the transparent resin binders, and metal grid copper electrodes are arranged on the transparent conductive colloid layers; through precise design of the line width and the spacing of the metal grid copper electrode, the shading rate can be reduced to the maximum extent while low square resistance and efficient current collection can be ensured, and the requirements of scenes such as building integrated photovoltaic and the like for high-light-transmittance and low-resistance electrodes are met.

The invention discloses a manufacturing method and application of a multilayer metal grid conductive circuit based on laser lift-off and electroplating thickening, and belongs to the technical field of conductive circuit manufacturing. Vacuum coating, laser stripping and electroplating technologies are combined, the process is simplified, the precision is improved, and the method is suitable for various substrate materials; according to the invention, laser parameter optimization (such as scanning speed and power) is realized, the line width control precision is ensured to reach + / -0.5 [mu] m, and the requirement of a 5G high-frequency circuit is met; according to the method, the use of photoresist and a chemical etching agent is reduced, and the pollution and the production cost are reduced; according to the invention, through laser drilling and interlayer conductive filling, a three-dimensional circuit structure and multi-layer interconnection are realized, and the application scene is expanded; compared with traditional etching, laser processing is adopted, a mask is not needed, complex patterns can be directly achieved through software programming, edge burrs are few, and the method is suitable for the requirement of a high-frequency circuit.

A CMOS image sensor includes a unit pixel array including a photodiode array, a color filter array, a micro-lens array, and a grid isolation structure laterally separating adjacent color filters. The grid isolation structure includes a first low-n grid, a second low-n grid underlying the first low-n grid, and a metal grid within the second low-n grid, the first low-n grid being narrower than the second low-n grid. The color filter array includes color filter matrixes, all color filter matrixes have the same arrangement pattern. Sizes of color filters in each color filter matrix vary depending on locations of the color filters in the color filter matrix. In an edge portion, a distance between a center of a color filter matrix and a center of a corresponding unit pixel matrix in plan view varies depending on a location of the unit pixel matrix in the CMOS image sensor.

An SPAD with a mesa structure has an etch stop layer that allows a first high-precision etch process that forms substrate contact plugs around the mesa to be combined with a second high-precision etch process that forms a metal grid. The etch stop layer is provided with a first elevation adjacent the substrate contact plugs and a second elevation adjacent the metal grid. The second elevation is greater than the first elevation. In a process, holes for the substrate contact plugs and trenches for the metal grid are etched down to the etch stop layer. After a break-through etch, a third etch process deepens the holes and the trenches to their final depths. The metal grid may land on a second etch stop layer that is absent from an area around the substrate contact plugs. This structure and process provide lower cost SPADs with mesa structures.

The application belongs to the technical field of lead-carbon batteries, and specifically provides a method for preparing a positive plate of a lead-carbon battery by a dry method, the positive plate and the battery. The method comprises the following steps: uniformly mixing material containing lead powder and polytetrafluoroethylene to obtain dry powder; applying the dry powder to both sides of a metal grid, pressing the dry powder, and then immersing the pressed dry powder in an acid solution, and then taking out the pressed dry powder, flattening the pressed dry powder, and solidifying the flattened pressed dry powder. The positive plate prepared by the method can not only improve the stability and consistency of the battery, but also reduce the production energy consumption, provides an experimental basis for breaking through the bottleneck of uniformity of active material in the traditional paste coating process, promotes the industrial application development of the technology in energy storage, and opens up a new idea for the sustainable development of the lead-carbon battery manufacturing industry.

The invention provides a composite metal grid and a preparation method thereof. The preparation method of the composite metal grid comprises the following steps: forming a core mold layer on a substrate; etching through the core mold layer to form a plurality of first grooves; forming a first protection layer, wherein the first protection layer covers the top surface of the core mold layer and the side wall and the bottom surface of the first groove and defines a second groove in the first groove; filling the bottom of the second groove with a first metal layer; trimming the side wall of the second groove above the first metal layer to form a third groove, wherein at least the width of a partial region of the third groove is greater than the width of the first metal layer; filling the bottom of the third groove with a second metal layer; filling the third groove with a second protection layer; and removing the core mold layer and the first protection layer above the core mold layer. Therefore, the problem that the outline of the composite metal grid is not vertical can be solved, and the light transmittance and the light blocking rate of the grid and the quantity of light received by the pixel units are improved. The composite metal grid provided by the invention is prepared by using the preparation method.