836 results about "Metal grid" patented technology

The invention relates to a backside illuminated image sensor and a manufacturing method thereof, and relates to the technical field of integrated circuits. The manufacturing method comprises the steps that a substrate is provided, the substrate comprises a first surface and a second surface which are opposite, a first isolation structure is formed in the substrate, and the first isolation structure extends from the first surface to the second surface; second isolation structures and metal grids are formed, the second isolation structures correspond to the first isolation structures and are arranged on the first surface, the second isolation structures are arranged on the first surface at intervals, and the second isolation structures and the metal grids are sequentially arranged in the direction away from the first surface; forming photodiodes between the second isolation structures, wherein the photodiodes and the second isolation structures are alternately arranged on the first surface; forming a light filtering element on one side, far away from the substrate, of the photodiode, wherein the light filtering element is located between the adjacent metal grids; according to the invention, the crosstalk problem of the backside illuminated image sensor is reduced.

The invention relates to the technical field of solar cells, and provides a laminated cell and a manufacturing method thereof, which are at least beneficial to improving the efficiency of the laminated cell. The laminated cell comprises a crystalline silicon bottom cell, a middle layer and a perovskite top cell which are sequentially laminated in a preset direction, the middle layer comprises a conductive composite layer, the conductive composite layer is located on the surface, facing the perovskite top cell, of the crystalline silicon bottom cell, and materials of the conductive composite layer comprise a conductive polymer and a metal dopant; the metal grid layer is embedded into one side, far away from the crystalline silicon bottom battery, of the conductive composite layer, and the conductive composite layer exposes the surface, far away from the conductive composite layer, of the metal grid layer; the barrier layer is located on the side, away from the composite layer, of the metal grid layer and covers the surfaces of the metal grid layer and the conductive composite layer.

The invention discloses a wearable medical monitoring equipment electrode which is composed of a layered structure and comprises a transparent flexible substrate layer which is made of a biocompatible flexible polymer material and is used for providing flexible support and isolating a metal electrode from the skin; the metal grid copper transparent electrode layer is formed on the surface of the transparent flexible substrate layer through a yellow light etching micro-nano processing technology; the conductive gel layer uniformly covers the surface of the metal grid copper electrode layer; the encapsulation layer is formed by spin-coating a polymethyl methacrylate solution on the surface of the conductive gel layer and forming a transparent protection layer after curing; the gradient line width bionic honeycomb-shaped copper grid design is adopted, the light transmittance is kept, meanwhile, the collection efficiency of physiological electric signals is remarkably improved, signal transmission loss is reduced, through the polyacrylamide and nanocellulose composite gel formula and micro-channel dynamic humidity adjustment, signal stability under long-term wearing is ensured, and the application range is wide. The problem of signal distortion caused by dryness of traditional gel is solved.

The embodiment of the invention provides a conductive film, a metal grid touch screen sensor, a touch module and a preparation method of the conductive film. The problem that in the prior art, a conductive film is prone to breakage after being bent for multiple times is solved. The conductive film includes a substrate layer, a first conductive layer, and a first outer blackening layer. The substrate layer is provided with a first surface and a second surface which are oppositely arranged along the thickness direction of the substrate layer; the first conductive layer comprises a plurality of first conductive sub-layers, the plurality of first conductive sub-layers are sequentially stacked on the first surface of the substrate layer, the thickness of each first conductive sub-layer is smaller than a first preset value, and the number of the first conductive sub-layers is larger than a second preset value; the first outer blackening layer is stacked on the first conductive sub-layer on the outermost layer. The touch module prepared from the conductive film provided by the embodiment of the invention has the advantages of good fracture resistance and high visual quality.

The current collector comprises a bipolar plate, the bipolar plate comprises a disc and a circular ring, the circular ring surrounds the periphery of the disc, one or more alkali liquor inlets are formed in the first end of the circular ring, and one or more alkali liquor outlets are formed in the second end of the circular ring; the flow field material is arranged on the disc, and the flow field material comprises a plurality of expansion metal grid plates which are sequentially arranged at intervals. The manufacturing method comprises the steps that the diameter of a disc is obtained, and the length and the width of each expansion metal grid plate are determined according to the diameter of the disc, the preset number of the expansion metal grid plates and the preset distance between the adjacent expansion metal grid plates; according to the length and the width of each expansion metal grid plate and the edge contour of the corresponding disc, the raw material is cut to obtain a preset number of expansion metal grid plates; and according to the preset position of each expansion metal grid plate on the disc, the expansion metal grid plates are welded to the disc. According to the invention, the uniformity of the alkali liquor distributed on the bipolar plate can be improved.

The invention relates to the technical field of flexible transparent electrodes, in particular to a Cu / Al laminated metal grid flexible transparent electrode and a preparation method thereof. The Cu / Al laminated metal grid flexible transparent electrode comprises a flexible substrate, a copper layer arranged on the flexible substrate and an aluminum layer arranged on the copper layer, and the aluminum layer located on the outer layer spontaneously forms an Al2O3 passivation layer with the thickness of 2-5 nm in air. The Al2O3 passivation layer can effectively prevent oxygen and moisture from permeating inwards, so that oxidation of the copper layer in a humid or high-temperature environment is fundamentally inhibited, long-term stability of the electrical property of the electrode is ensured, and meanwhile, due to the fact that the thickness of the copper layer is 150-250 nm, excellent conductivity is provided, and low square resistance is achieved; the latticed structure maintains high light transmittance of the electrode while ensuring a high conductive path. Finally, the structure has excellent oxidation resistance, high light transmittance, low sheet resistance and flexible stability under the support of a flexible transparent substrate with the thickness of 50-200 [mu] m, and meets the harsh requirements of a new generation of flexible optoelectronic devices on electrode performance.

The invention belongs to the technical field of optical devices, and provides a single photon avalanche diode array, a receiving sensor and a laser radar, at least two SPAD units are arranged in an array, a microlens converges incident light to the corresponding SPAD unit, a back metal grid connects the SPAD unit and a corresponding external electrode, a first dielectric layer is arranged between the microlens and the SPAD unit, and a second dielectric layer is arranged between the microlens and the SPAD unit. The second dielectric layer is arranged between the SPAD units and the front metal wiring layer, and the front metal wiring layer is electrically connected with the corresponding SPAD units through contact metal wires. The deep groove isolation columns are arranged between the adjacent SPAD units, and the metal filling structures are arranged between the deep groove isolation columns and the back metal grids, so that self-excitation photons generated when the SPAD units are excited by incident light can be isolated, the self-excitation photons are prevented from entering the adjacent SPAD units through grid gaps, the probability of photon crosstalk is reduced, and the optical crosstalk of the device is reduced.

The invention provides a transparent electromagnetic shielding metal copper mesh and a preparation method and application thereof. The preparation method of the transparent electromagnetic shielding metal copper mesh comprises the steps that an electromagnetic shielding substrate is coated with an ink layer, then the ink layer is converted into a patterned metal copper mesh to be deposited on the surface of the electromagnetic shielding substrate through a femtosecond laser reduction direct writing method, and finally ink which is not converted into the metal mesh is cleaned through cleaning liquid. Obtaining a transparent electromagnetic shielding metal copper mesh; the ink is prepared from copper salt, water, reductive low-carbon alcohol and a nano material, and the nano material comprises at least one of a high-conductivity nano material and a high-permeability nano material. According to the method, the transparent electromagnetic shielding metal copper mesh is prepared through femtosecond laser reduction direct writing, by adjusting the line width and the period of the metal copper mesh, the shielding effectiveness is effectively improved under the condition that the high light transmittance of an electromagnetic shielding material is guaranteed, the technological method is simple and feasible, and high-efficiency and low-cost manufacturing of the transparent electromagnetic shielding metal copper mesh is achieved.

The invention is suitable for the technical field of solar cells, and provides a back contact solar cell, comprising: a silicon wafer, the back of which is provided with an edge main grid and a middle main grid adjacent to the edge main grid; the first fine grid lines are arranged on the edge main grids; the second fine grid lines are arranged on the middle main grid; each first fine grid line comprises a first edge fine grid and a second edge fine grid, one of the first edge fine grid and the second edge fine grid is an unequal-width section, the other one of the first edge fine grid and the second edge fine grid is an equal-width section, the width of the equal-width section is larger than or equal to that of the second fine grid line, and the average width of the unequal-width sections is larger than that of the equal-width section. According to the invention, the width of the first fine grid line is set to be greater than the width of the second fine grid line, so that the carrier collection capability of the first fine grid line is improved, the contact resistance or series resistance of the metal grid line and the silicon wafer is reduced, the binding force of the metal grid line and the silicon wafer is improved, and the working efficiency of the cell is improved.

The invention relates to the technical field of lead-acid batteries, and particularly discloses a graphene-based composite material as well as a preparation method and application thereof. The graphene-based composite material comprises a graphene-CNTs three-dimensional composite skeleton, and tin dioxide and titanium dioxide which are loaded on the graphene-CNTs three-dimensional composite skeleton. In the material provided by the invention, the graphene-CNTs three-dimensional composite skeleton has excellent conductivity and mechanical strength, so that the resistivity of a negative plate is remarkably reduced, structural support is provided, and the binding force of lead powder and a negative electrode metal plate grid is enhanced, thereby reducing the falling of active substances and improving the cycling stability of the battery; meanwhile, tin dioxide and titanium dioxide are introduced into the graphene-based composite material and form a multi-stage synergistic system with the graphene-CNTs three-dimensional composite framework, so that the problems that the negative electrode of the lead-acid battery is easy to separate hydrogen, the conductivity is insufficient and active substances fall off can be effectively solved, and the cycle performance of the battery is remarkably improved.

The invention relates to a phase change regulation and control Van der Waals junction type transistor infrared detection chip and a preparation method and application thereof. The unit structure of the Van der Waals junction type transistor infrared detection chip comprises a two-dimensional material layer, a metal electrode, a vanadium dioxide micro-nano structure, an electrical channel and a CMOS reading circuit from top to bottom. The metal electrode comprises a metal grid electrode, an auxiliary electrode, a metal source electrode and a metal drain electrode; two ends of the vanadium dioxide micro-nano structure are respectively connected with the metal grid electrode and the auxiliary electrode, and two ends of the two-dimensional material layer are respectively connected with the metal source electrode and the metal drain electrode; and the electrical channel is connected with the metal electrode and the CMOS reading circuit on the substrate. According to the infrared detection chip prepared by the invention, the response speed of a device is remarkably improved, the response range is widened, ultra-sensitive detection is realized, a self-powered infrared detection chip can be realized, and the infrared detection chip has important significance for reducing the power consumption and the cost of the device.

The invention discloses a high-efficiency transmission and reflection polarization conversion metasurface, which belongs to the technical field of electromagnetic wave regulation and control, and is characterized in that a plurality of transmission and polarization conversion metal structure layers arranged in an array are arranged between a first dielectric substrate and a second dielectric substrate; the top of the third dielectric substrate is correspondingly provided with a plurality of reflective polarization conversion metal structure layers which are arranged in an array; an air layer is arranged between the second dielectric substrate and the third dielectric substrate; the bottom of the first layer dielectric substrate and the top of the second layer dielectric substrate are respectively and correspondingly provided with metal grids, and a metal grid cavity is formed between every two adjacent metal grids. The metasurface has the functions of transmission polarization conversion and reflection polarization conversion, high-efficiency transmission polarization conversion can guarantee normal communication in a band, high-efficiency reflection polarization conversion can change polarization of radar detection waves, and the metasurface can be used for an embedded antenna cavity antenna housing.

An antenna module according to an embodiment comprises: a first layer which is arranged on the front surface of a dielectric substrate, and which is composed of a radiator region having a metal mesh grid, and a dummy region having a dummy mesh grid formed of a plurality of patterns; and a second layer which is arranged on the rear surface of the dielectric substrate and which allows the metal mesh grid to operate as a ground. The plurality of patterns can form a first metal line to a fourth metal line, the first metal line and the third metal line can be parallel to each other, the second metal line can connect the first metal line to the third metal line, and the fourth metal line can be connected to a second end portion of the third metal line.

The invention provides a crystalline silicon solar cell metal grid line preparation method, a crystalline silicon solar cell and a photovoltaic module, and relates to the technical field of crystalline silicon solar cells. The preparation method comprises the following steps: printing a plurality of first sub-grid lines arranged in rows or columns by using a knotless screen printing plate, and curing to obtain a first target battery piece; and overprinting a second sub-grid line on each first sub-grid line by adopting a full-opening steel plate, curing and sintering. The first sub-grid lines are printed by adopting a knotless screen printing plate, and then the second sub-grid lines are overprinted by adopting a full-opening steel plate, so that the height-width ratio of the metal grid lines can be improved; the second sub-grid line is overprinted by using the full-opening steel plate, so that the shaping of the metal grid line can be assisted, the surface flatness of the metal grid line is optimized, the broken grid is reduced, the contact resistance is reduced, the formation of high-quality ohmic contact is promoted, a better narrow-line-width design space can be obtained, and the consumption of silver is reduced while the shielding of a light absorption area is reduced; and the production cost of the battery is effectively reduced.

The utility model relates to the technical field of water conservancy protection slope upstream faces, in particular to a water conservancy project protection slope design model which comprises a slope body, one side of the slope body is fixedly connected with a slope toe, the top of the slope toe is provided with an anti-scour assembly, the anti-scour assembly comprises a protection slope main body, the protection slope main body is fixedly connected to the top of the slope toe, and the slope toe is fixedly connected with the slope toe. A drainage groove is formed in one side of the top of the slope protection body, a water receiving groove is formed in the side, away from the drainage groove, of the top of the slope toe, and a green plant planting block is fixedly connected to an inner cavity of the water receiving groove. According to the slope protection design model for the water conservancy project, by installing the anti-scouring assembly, in the process of using the model, through cooperation of green plant planting blocks, metal grids and other components and special structural design, impact of water flow can be resisted, erosion of the water flow to a slope surface is reduced, the service life of a protection slope is prolonged, and safe operation of water conservancy facilities is guaranteed; green plants are planted on the surface, rainwater can be effectively absorbed, water and soil loss is reduced, and soil stability is improved.

The invention discloses a comprehensive two-dimensional vertical structure metal-semiconductor field effect transistor and a preparation method thereof. A source electrode, a lower isolation layer, a drain electrode and an upper isolation layer which are vertically stacked are formed on the surface of a substrate, an inclined side wall is formed, a channel covers the inclined side wall, a grid electrode and the channel are self-aligned, and a semi-metal grid electrode and a semiconductor channel are in direct contact to form a Schottky junction; based on a comprehensive two-dimensional material system, the Fermi pinning effect and unintentional doping are effectively inhibited, and the performance of the device is optimized by optimizing the grid control capability and the electric contact performance; a gate dielectric layer is not arranged, so that the problems of electrical performance deterioration and the like under a limit miniature scale are avoided; the integration density of the device is improved and the research and development and manufacturing cost is controlled while excellent performance is kept; the channel length and the contact length are synchronously and accurately reduced by utilizing a side wall vertical structure; the method is applied to the industrial application fields of next-generation integrated circuit chips, high-density memories, flexible and wearable electronics and the like which break through the silicon-based physical limit.

The utility model discloses a transparent heatable electromagnetic shielding window, which comprises a transparent base material layer, a metal grid layer, an inorganic material layer and a fluorosilicone material layer which are sequentially laminated and connected from bottom to top, and the inorganic material layer comprises a plurality of silicon dioxide coatings and a plurality of trititanium pentoxide coatings which are staggered and stacked. The transparent heatable electromagnetic shielding window is novel in structure, the metal grid layer not only can be used for electromagnetic shielding, but also can be used for introducing a relatively large current to heat the electromagnetic shielding window so as to ensure the permeability of the electromagnetic shielding window in a severe cold environment, and then the visibility of the electromagnetic shielding window is ensured; the arrangement of the inorganic material layer can improve the light transmission of the electromagnetic shielding window to a greater extent; the fluorosilicone material layer can improve the antifouling capability of the electromagnetic shielding window and improve the phenomenon that fingerprints are easy to remain in the electromagnetic shielding window, so that the visibility of the electromagnetic shielding window is further ensured.

The invention belongs to the technical field of electromagnetic shielding of optical transparent parts, and particularly relates to a large-slope conformal curved surface electromagnetic shielding transparent light window considering infrared visible light laser, which consists of a curved surface optical glass substrate, an electromagnetic shielding layer and a surface protection layer, the electromagnetic shielding layer is of a multi-layer electromagnetic shielding structure composed of a conductive polymer transparent film and a randomly-distributed metal mesh film. The electromagnetic shielding transparent light window has high shielding characteristics in X and S wave bands, keeps excellent optical transmission performance, and can meet the requirements of high imaging quality and high stealth characteristics of a high-performance seeker. Meanwhile, the appearance of the light window is trimmed and the design parameters of the shielding layer are adjusted, so that the service requirements of the seeker in different combat scenes can be met, and the electromagnetic shielding transparent light window with excellent performance is provided for the seeker of weapon equipment.

The invention relates to the technical field of wireless communication technology, positioning navigation technology and intelligent equipment interaction, in particular to a UWB (Ultra-Wideband) antenna based on metal grid copper, which comprises a transparent flexible substrate with the light transmittance of more than 90%, a metal grid copper layer, a metal grid copper layer and a metal grid copper layer, a copper grid formed on the transparent flexible substrate and configured as a radiator of the UWB antenna; the ultra-wideband chip module is configured to execute receiving, transmitting and processing of ultra-wideband signals and high-precision positioning calculation; the interconnection structure is used for realizing electrical connection between the copper grid and the ultra-wideband chip module; the line width of the copper grid is smaller than 30 microns, and the light transmittance is larger than 80%, so that the UWB antenna has high transparency, and is nearly invisible visually when being attached to carriers such as glass and transparent packages, and the original attractiveness of the carriers is kept; and on the other hand, the transparent flexible substrate supports curved surface attachment and is suitable for special-shaped object identification, and the applicability of the UWB antenna is greatly improved.

The invention belongs to the technical field of wireless communication and microwave antennas, and particularly discloses a transparent antenna for receiving ADS-B (Automatic Dependent Surveillance-Broadcast) signals, which comprises a phase delayer and is formed by matching a miniaturized coplanar waveguide feed inverted F transparent antenna and a coplanar waveguide feed bent line transparent antenna. The substrates of the two antennas are transparent acrylic substrates, and the antenna body structure and the grounding plate are made of an extremely fine metal grid structure used by film photoetching, so that the transparency of the antennas is ensured by the method. According to the invention, 83% of optical transparency in the working bandwidth can be realized, 1090MHz aircraft ADS-B signals can be received, the structure is simple, the size is small, the weight is light, and the concealment is strong.

The embodiment of the invention discloses a preparation method of a TBC battery and the TBC battery. The preparation method comprises the following steps: firstly, providing a TBC battery process sheet; the TBC battery process piece comprises a battery piece, a first metal grid line and a second metal grid line, the first metal grid line and the second metal grid line are located on the surface of the same side of the battery piece, the first metal grid line and the second metal grid line are alternately arranged in an interdigital mode, then laser is adopted, the first metal grid line is irradiated along a first preset path, and the second metal grid line is irradiated along a second preset path. Laser is adopted to irradiate the second metal grid line along a second preset path, so that laser sintering treatment is carried out on the TBC battery process piece, the first metal grid line and the second metal grid line are in ohmic contact with the battery piece, and the TBC battery is manufactured; wherein the laser sintering power corresponding to the first metal grid line is different from the laser sintering power corresponding to the second metal grid line. By means of the method, the first metal grid lines and the second metal grid lines are in good ohmic contact with the battery piece.

The invention provides a perovskite quantum dot perovskite thin film laminated solar cell structure and a preparation method thereof, and belongs to the technical field of perovskite laminated solar cells. Comprising a perovskite quantum dot top cell and a perovskite thin film bottom cell. The perovskite quantum dot perovskite thin film laminated solar cell structurally comprises a glass substrate, a transparent conductive film layer, a hole transport layer, a perovskite thin film layer, an electron transport layer, a buffer layer, a middle layer, a hole transport layer, a perovskite quantum dot layer, an electron transport layer, a buffer layer, a transparent electrode and a metal grid line electrode from bottom to top in sequence. According to the perovskite quantum dot perovskite thin film laminated solar cell prepared by the invention, the light absorption spectrum range is widened and the photoelectric conversion efficiency is improved through the laminated structure. The perovskite quantum dot perovskite thin film laminated solar cell prepared by the invention is simple in preparation method, low in cost and easy for large-scale preparation, and has remarkable commercial potential.

The invention discloses a method for preparing an upper electrode of a gallium arsenide solar cell for a low-cost space, which comprises the following steps of: corroding a gallium arsenide epitaxial wafer taking germanium as a substrate in a mixed acid corrosion solution, removing an oxide layer and pollutants on the surface of the epitaxial wafer, taking out the epitaxial wafer, and cleaning the epitaxial wafer in deionized water; the surface of the active layer of the epitaxial wafer is tightly attached to the metal grid mesh, the epitaxial wafer is put into vacuum evaporation equipment, electrode metal is evaporated layer by layer in an electron beam evaporation mode, and after evaporation is completed, the epitaxial wafer is taken out from the vacuum evaporation equipment when the epitaxial wafer is cooled to 100 DEG C or below; and placing in a vacuum sintering furnace, heating at a constant temperature for a period of time, cooling to below 100 DEG C, and taking out to obtain the space gallium arsenide solar cell top electrode. A traditional photoetching process is replaced by a metal grid mesh, the surface of an active layer of an epitaxial wafer is tightly attached to the metal grid mesh, and then the epitaxial wafer is put into a vacuum coating machine to be subjected to metal evaporation. And the evaporated metal is deposited on the surface of the epitaxial wafer through gaps of the grid mesh to prepare a conductive upper electrode.

A metal grid flexible transparent conductive film and its preparation method and applications are provided. The conductive film has a flexible substrate and a sputtered metal grid, the metal grid forming various desired patterns on the flexible substrate. Magnetron sputtering method is used to accurately control the thickness of the metal grid layer by controlling the deposition time, so as to prepare a flexible transparent conductive film with good quality, high transmittance, high conductivity and strong bending resistance. The conductive film can be used as a flexible transparent electrode material with excellent properties, and can satisfy the demand of flexible display screen or flexible electronics, and the preparation process is simple, safe and non-toxic, and it can be convenient to prepare a large-area metal grid.

The invention discloses a preparation process of a BC battery, which comprises the following steps: S1, preparing a first metal layer on the surface of an N electrode by a light induction process; s2, sequentially depositing a second metal layer, a barrier layer and a seed layer on the back surface of the battery piece by a vacuum deposition process; the material of the second metal layer is different from that of the first metal layer; s3, performing a patterning process on the back surface of the battery piece to expose a to-be-electroplated region; s4, preparing a metal grid line in the to-be-electroplated area through an electroplating process; and S5, removing the mask layer, the seed layer, the barrier layer and the second metal layer. Through the photoelectric induction technology, the nickel metal layer is prepared on the N electrode, the N face and the nickel metal form ohmic contact, the aluminum metal layer is prepared on the surface of the P electrode, the P face and the aluminum metal form ohmic contact, compounding of the metal contact face is reduced, the open voltage Voc of the battery piece is improved, ohmic contact resistance is reduced, and the short-circuit current Isc and the fill factor FF of the battery piece are improved.

The invention provides a back contact solar cell. The back contact solar cell comprises a silicon substrate, a first metal gate line, a second metal gate line, a first passivation layer, a second passivation layer and a protection layer, the first metal grid lines and the second metal grid lines are arranged on the back surface of the silicon substrate, and a protective layer accommodating area is formed between the adjacent first metal grid lines and second metal grid lines at intervals; the first passivation layer is arranged on the front face of the silicon substrate, and the second passivation layer is arranged on the back face of the silicon substrate and located in the protection layer containing area; the protection layer is arranged on the surface, deviating from the silicon substrate, of the first passivation layer, and the orthographic projection of the protection layer on the back surface of the silicon substrate is located in the orthographic projection of the protection layer accommodating area on the back surface of the silicon substrate; the thickness h1 of the protective layer, the distance h2 between one end, far away from the second passivation layer, of the first metal gate line and the second passivation layer, and the distance h3 between one end, far away from the second passivation layer, of the second metal gate line and the second passivation layer meet h1gt; h1, h2, h1gt; h3. After the back contact solar cell is stacked, the metal grid lines on the back surface are not easy to scratch the textured surface on the front surface.

The present disclosure provides a touch display panel and a display device. The touch display panel comprises: a base substrate; a pixel defining layer located on one side of the base substrate, wherein the pixel defining layer defines a plurality of sub-pixels located in a display area; and a first touch metal layer located on the side of the pixel defining layer facing away from the base substrate, wherein the first touch metal layer comprises a plurality of metal grid lines intersecting with each other, the orthographic projection of each metal grid line on the base substrate at least partially overlaps the orthographic projection of the pixel defining layer on the base substrate, the plurality of metal grid lines comprise first metal grid lines, the first metal grid lines also function as a first light shielding layer, and the width of the first light shielding layer is 0.6-1.2 times the width of the pixel defining layer at a corresponding position.

The invention discloses a metal grid transparent conductive film which sequentially comprises a transparent base material layer, a metal grid layer, a transition layer and a protection layer from bottom to top. The manufacturing method comprises the steps of pretreating the transparent base material, preparing the metal seed layer, performing laser direct writing patterning, performing electroplating thickening to form the metal grid layer, preparing the transition layer and the protective layer, and performing performance test and adjustment. The hexagonal honeycomb grid structure and the arc edge design are adopted, and the problem of metal grid electric field concentration is effectively solved; through the arrangement of the transition layer, the interface bonding force of the metal grid is improved; the protection layer and the transition layer cooperate to improve the corrosion resistance of the film; the problems that an existing transparent conductive material is high in cost, poor in flexibility and insufficient in interface compatibility, and an electrochromic device is concentrated in electric field, short in service life and the like are effectively solved, and the transparent conductive material can be widely applied to building intelligent windows, automobile anti-dazzle rearview mirrors, flexible display panels and other electrochromic devices and has important industrial application value.

The invention discloses a TopCon cell and a TopCon cell preparation method, and belongs to the field of solar cells. The structure of the passivation layer is optimized, the doped polycrystalline silicon layer is reserved in the metal contact area, the doped polycrystalline silicon layer and the substrate form a high-low junction to provide field passivation, and ohmic contact is formed between the doped polycrystalline silicon layer and the electrode; a doped polycrystalline silicon carbide layer is arranged in a non-metal contact area, and the doped polycrystalline silicon carbide layer and a substrate form a heterojunction to provide field passivation and serve as a carrier transverse transmission layer. The parasitic absorption of the passivation layer is reduced by removing the doped polycrystalline silicon layer in the non-metal contact region. The light absorption coefficient of the doped polycrystalline silicon carbide layer is low and the doped polycrystalline silicon carbide layer is thin, so that parasitic absorption can be reduced. Ohmic contact is formed between the doped polycrystalline silicon layer in the reserved metal contact area and the electrode, so that low recombination loss can be ensured when the doped polycrystalline silicon layer is in contact with the metal grid line. Field passivation is formed in the metal contact area and the non-metal area, and the passivation effect of the whole surface of the substrate is guaranteed.

The invention relates to the technical field of solar cells, in particular to a wide-band-gap perovskite solar cell and a preparation method thereof. The preparation method comprises the following steps: preparation of the ITO layer, O2-plasma treatment of the ITO layer, preparation of the hole transport layer, preparation of the perovskite light absorption film layer, coating of PEAI post-treatment salt, preparation of the thermal evaporation C60 electron transport layer, preparation of the SnO2 electron transport layer by an atomic layer deposition method, plating of the ITO transparent conductive electrode by a magnetron sputtering technology, preparation of the metal gate line, and evaporation of the MgF2 antireflection layer. The organic fluorescent material NPBI2 which absorbs ultraviolet light and converts the ultraviolet light into visible light is doped into the perovskite light absorption layer, so that the damage of the ultraviolet light to perovskite is avoided, the perovskite can absorb the visible light to generate power and improve the photoelectric conversion efficiency, and the organic fluorescent material can passivate crystal defects in the perovskite light absorption layer and improve the quality of the perovskite thin film. And the carrier lifetime is prolonged.