208results about How to "Broad absorption spectrum" patented technology

A laminated solar battery based on a perovskite battery and an HIT battery comprises a back metal electrode; the HIT battery which is manufactured on the back metal electrode; an ITO connection layer which is manufactured on the HIT battery; an electron transporting layer which is manufactured on the ITO connection layer; a perovskite active absorption layer which is manufactured on the electron transporting layer; a hole transporting layer which is manufactured on the perovskite active absorption layer; an interface modification layer which is manufactured on the hole transporting layer; a light facing surface transparent electrode which is manufactured on the interface modification layer; and a metal grid line electrode which is manufactured on the light facing surface transparent electrode, wherein the metal grid line electrode is located on the two sides of the center on the light facing surface transparent electrode. With the adoption of the laminated solar battery based on the perovskite battery and the HIT battery, the absorption spectrum can be expanded and light energy is converted into electric energy to the greatest extent, so that the photoelectric conversion efficiency of the perovskite solar battery is improved.

The invention relates to a preparation method of a rare-earth element doped modified hollow microsphere bismuth oxyiodide photocatalyst. The preparation method comprises the following steps: adding bismuth nitrate pentahydrate and nitrate of a rare-earth element into a solvent and sufficiently dissolving to obtain a bismuth nitrate solution containing the rare-earth element; under magnetic stirring, dropwise adding a potassium iodide solution at a uniform speed drop by drop; after finishing dropwise adding, continually carrying out the magnetic stirring to obtain a precursor solution; puttingthe precursor solution into a reaction kettle to react by adopting a solvothermal method; after finishing the reaction, cooling a product to room temperature and taking out the product; washing, drying in vacuum and grinding to obtain the rare-earth element doped modified hollow microsphere bismuth oxyiodide photocatalyst. The method provided by the invention is simple and feasible and has the characteristics of simple process, good experiment reproducibility, low production cost and the like; the prepared rare-earth element doped composite photocatalyst has good photocatalytic degradation performance on organic pollutant and a good application prospect.

The invention describes a usage of a heteroatom doped water-soluble carbon quantum dot serving as a photosensitizer in an antimicrobial material. Various types of heteroatom doped water-soluble carbon quantum dots contain one or more of such heteroatoms as N, S, Si, Se, P, As, Ge, Gd, B, Sb and Te, and the absorption spectrum wavelength of the heteroatom doped water-soluble carbon quantum dot is 300-850 nm. As shown in a research, the heteroatom doped water-soluble carbon quantum dots can efficiently generate active oxygen under the irradiation of visible light, so that the heteroatom doped water-soluble carbon quantum dot has a huge development potential in the application field of photodynamic (PDT) sterilization and disinfection.

The invention discloses a method for preparing titanium dioxide nanometer tube array by molybdenum-tungsten mixture anode oxidation. Wherein, an electrolyte is an organic electrolyte system of hydrofluoric acid with HF content by mass of 0.5 swung dash 3% and dimethyl sulfoxide; under a DC voltage of 25 swung dash 100 V, some pure titanium or titanium alloy is taken as an anode, a platinum sheet as a cathode, and the nanometer tube is prepared by electrolyzing in the electrolyte; then the prepared TiO2 nanometer tube array is immersed in clearing solution of WO3 or MoO3 taking O22- as chelant for 10 swung dash 90 min., then TiO2 nanometer tube array mixed with tungsten and molybdenum is prepared. The invention increases the length of TiO2 nanometer tube, enlarges the specific surface area of the light-pole material, and widens the absorption spectrum of the TiO2 nanometer tube array in visible light area.

The invention discloses a silicon-avalanche photodetector (Si-APD) with black silicon as a photosensitive layer and a preparation method of the Si-APD with the black silicon as the photosensitive layer, and belongs to the field of photoelectric detection technology. The Si-APD comprises a silicon intrinsic substrate 1, an N<+> region 2, a P type region 3, an annular N type region 4, an N<+> region black silicon layer 5, a P<+> region 6, an upper electrode 7 and a lower electrode 8, wherein the N<+> region 2 is located in the middle of the upper surface of the silicon intrinsic substrate 1, the P type region 3 is located below the N<+> region, the annular N type region 4 is located on the periphery of the upper surface of the silicon intrinsic substrate, the N<+> region black silicon layer 5 is located on the upper surface of the N<+> region, the P<+> region 6 is located on the lower surface of the silicon intrinsic substrate, the upper electrode 7 is located on the upper surfaces of the N<+> region black silicon layer and the annular N type region, and the lower electrode 8 is located on the lower surface of the P<+> region. According to the Si-PAD, the black silicon material serves as the photosensitive layer, and meanwhile the annular N type region is additionally arranged on the peripheries of the N<+> region and the P type region. Thus, the Si-APD with the black silicon as the photosensitive layer can absorb light waves of a near-infrared band and have higher light absorptivity and a wider response wave band, the preparation technique is simple, the cost is low, and the Si-PAD has the advantages of being easy to integrate, quick in response speed, high in responsivity and wide in response wave band.

The invention provides a solar cell which comprises a quantum well structure; the cell structure comprises from bottom to top a back electrode, a bottom cell consisting of a p-typed germanium substrate and an n-typed germanium epitaxial layer, an n-typed GaAs layer transition layer, a lower tunneling junction, a middle cell consisting of a p-typed GaAs layer, the quantum well structure and an n-typed GaAs layer, an upper tunneling junction, a top cell consisting of a p-typed GaInP layer and an n-typed GaInP layer, an anti-reflection film and an upper electrode, wherein, the quantum well structure is divided into a quantum well layer which is made by three to five clusters of semiconductor materials and a barrier layer; and the solar cell can extend the absorption spectra of the middle cell, improve the current matching among three sub-cells, and enhance the conversion efficiency of the cell.

The invention discloses a quantum dot fluorescent material, which is prepared from the following raw materials of: by weight, 0.01-35 parts of a fluorescent material, 60-90 parts of a resin, and 2-35 parts of a filling material, wherein the fluorescent material comprises quantum dots or a compound of quantum dot and non-quantum dot fluorescent materials. Correspondingly, the invention discloses a preparation method of the above quantum dot fluorescent material. In addition, the invention also discloses a LED fill / flash lamp, which is prepared by steps of: coating the quantum dot fluorescent material on the surface of an unpacked LED chip, curing and packaging. According to the invention, the quantum dot fluorescent material and the LED fill / flash lamp prepared by the utilization of the quantum dot fluorescent material have characteristics of high color rendering index, low color temperature and strong luminous efficiency. By the adoption of the material and the lamp, color trueness of images acquired by image acquisition equipment can be substantially raised.

An organic solar cell comprises a transparent substrate, a cathode, an electron transport layer, an optical activity layer, a hole transport layer and an anode, wherein the optical activity layer comprises a donor material, an acceptor material and two or more dyes with different absorption wavelengths. According to the organic solar cell, the absorption of the organic solar cell for near ultraviolet and near infrared regions in sunlight is increased through the addition of dye combination, the absorption spectrum of the organic solar cell for the sunlight is broadened, the fluorescent radiation loss is reduced, the utilization efficiency of the sunlight is reinforced, and the photoelectric conversion efficiency of the organic solar cell is further improved. Meanwhile, the crystallinity of the optical activity layer is also improved due to the addition of the dyes, and the stability of the organic solar cell is improved.

A double-knot organic solar cell comprises a bottom cell and a top cell, wherein the bottom cell comprises a transparent substrate, a negative pole, an electron transfer layer, an optical activity layer, a hole transfer layer and an intermediate electrode layer; the top cell comprises an intermediate electrode layer, an electron transfer layer, an optical activity layer, a hole transfer layer and a positive pole; and the optical activity layers of the bottom cell and the top cell contain donor materials, acceptor materials and dyes, dyes include at least one short-wave dye and at least one long-wave dye, the absorption peak of the short-wave dye is 250-550 nm, and the absorption peak of the long-wave dye is 650-950 nm. According to the double-knot organic solar cell, the dyes with different wave lengths are combined and used, so that the sunlight utilization ratio is increased, and the photoelectric conversion efficiency and the stability of the solar cell are improved.

The invention discloses a modified carbon quantum dot loaded hollow tubular carbon nitride photocatalyst and a preparation method thereof. The photocatalyst takes hollow tubular carbon nitride as a carrier and is loaded with modified carbon quantum dots; urea and melamine with a mole ratio of 1-5:1 are used to prepare the hollow tubular carbon nitride through hydrothermal and calcination. The preparation method comprises the following steps of: mixing hollow tubular carbon nitride, water and modified carbon quantum dot solution, and drying to obtain the photocatalyst. The photocatalyst has the advantages of large specific surface area, large number of pores, multiple active sites, high speed of separation and migration of photo-generated carriers, strong light absorption capacity, high photocatalytic activity, high stability, high photocatalytic efficiency and the like; the preparation method of the photocatalyst has the advantages of convenience in synthesis, simplicity in operation,no secondary pollution to the environment and the like. The photocatalyst can be widely used for treating organic pollutants in the environment and killing harmful microorganisms in the environment,and has good application value and application prospect.

A lithographic projection apparatus is disclosed. The apparatus includes a radiation system that provides a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to pattern the beam of radiation according to a desired pattern. The apparatus also includes a substrate support that supports a substrate, a projection system that projects the patterned beam onto a target portion of the substrate, a plurality of optical elements that form part of at least one of the radiation system, the patterning structure, and the projection system; and a cleaning device. The cleaning device includes at least one cleaning beam of radiation, and a gas. The cleaning device is configured to clean an individual optical element or a subset of the plurality of optical elements.

The invention discloses an InP / ZnS quantum dot and a CIS / ZnS quantum dot for a white-light LED and a preparation method of the InP / ZnS quantum dot and the CIS / ZnS quantum dot. Mixed fluorescent powder of the green luminous InP / ZnS quantum dot and the orange-red luminous CIS / ZnS quantum dot is prepared as a fluorescent layer; and a blue chip is selected to be modulated into the white LED as an excitation light source. Each of the InP / ZnS quantum dot and CIS / ZnS quantum dot structurally comprises a cooling base (1), a light picking lens (2), an electrode (3), a gold line (4), silica (5), a silica gel layer (6) of the mixed fluorescent powder of the InP / ZnS quantum dot and the CIS / ZnS quantum dot, and the blue chip (7) with the peak wavelength of 440-480nm. The used fluorescent material is low in toxicity and low in cost; the synthesized white-light LED is simple in structure; the defects of poor color rendering property, relatively narrow color gamut, poor stability and the like in an existing LED technology are overcome; and the InP / ZnS quantum dot and the CIS / ZnS quantum dot have good development prospects.

The invention discloses a wide-spectrum high-absorption solar cell, which is a semiconductor photovoltaic device and comprises an intrinsic absorption layer of specific thickness. The thickness of theintrinsic absorption layer is determined by the light trapping efficiency of a photonic crystal. The device is sequentially provided with a substrate layer, an insulating buried layer, a top absorption layer (like a Si layer) and an anti-reflection film layer from bottom to top; ions are injected into the two sides of a top absorption region of the device to form a p-type doped region and an n-type doped region respectively, a p electrode is formed on the p-type doped region, and an n electrode is formed on the n-type doped region; the intrinsic absorption layer is arranged between the p-typedoped region and the n-type doped region; periodic air holes are formed in the surface of the intrinsic absorption layer to form photonic crystals; the specific period and the etching depth of the periodic air holes are calculated according to requirements, an incident light wavelength range and a theory; the periodic air holes can be made into cylindrical holes or conical holes; another semiconductor material (like Ge) is filled in the periodic air holes. The solar cell has the advantages of wide absorption spectrum, high absorption efficiency, high integration level, multiple functions andthe like, and is suitable for ultraviolet, visible light and near-infrared bands.

The invention discloses a ternary all-polymer solar cell and belongs to the technical field of photovoltaics. A non-fullerene small molecule receptor with strong crystallinity is added to an optical active layer of a binary all-polymer solar cell as a third component. An inversion structure is adopted by the cell; and the optical active layer is prepared from the following components in percentages by weight: 41.6-50% of an electron donor, 41.6-50% of an electron receptor and 0-16.6% of the non-fullerene small molecule receptor with the strong crystallinity. A non-fullerene small molecule receptor material with strong crystallinity is added to the optical active layer, so that spectral absorption is widened, phase separation is improved and bimolecular charge recombination can be inhibited, thereby causing more effective charge generation and transportation, improving the short-circuit current density of a device and finally improving the photoelectric conversion property of the device. The ternary all-polymer solar cell disclosed by the invention has the advantages of being high in photoelectric conversion property, simple in preparation process, short in process and low in cost.