3results about How to "Increase absorbance" patented technology

The application belongs to the field of organic photovoltaics, and relates to a kind of polymer photovoltaic material and its preparation method and application. Double bromide compound A and double side tin compound B are subjected to Stille cross coupling reaction under the action of palladium catalyst, and the polymer photovoltaic material is obtained. The polymer photovoltaic material prepared by the application has an ultra-wide absorption spectrum range from 300 nm to 1200 nm. Such material exhibits an ultra-wide spectral range and a high extinction coefficient, and embodies excellent light absorption capacity. The strong light absorption capacity of the polymer photovoltaic material prepared by the application will help to improve the device efficiency of organic photovoltaics and improve the energy conversion efficiency of the device. The polymer photovoltaic material prepared by the application provides reference value for the design of functional materials in many fields of organic photoelectricity and solar energy utilization and conversion.

The present invention provides a protective film agent and a method for processing a workpiece, the protective film agent being capable of forming a protective film suitable for processing with a laser beam. The protective film agent is coated on a workpiece when the workpiece is processed, the protective film agent comprising: a water-soluble resin; a light absorber having a flavone structure, a flavonol structure, or an isoflavone structure; and a solvent that dissolves the resin and the light absorber.

The invention relates to the technical field of semiconductor devices, and discloses a semiconductor device, a wafer and a wafer processing method. The semiconductor device includes: a substrate; an epitaxial layer; an ohmic contact layer; the device electrode layer is located on the side, away from the substrate, of the ohmic contact layer; the at least one interconnection layer is electrically connected with the device electrode layer in the device area and located on the side, away from the substrate, of the device electrode layer, and the at least one interconnection layer comprises a top interconnection layer farthest away from the substrate; the dielectric layer is located between the top interconnection layer and the device electrode layer; the heat absorption layer is located on the side, away from the substrate, of the dielectric layer, the heat absorption layer is at least located in the cutting edge area, and the absorptivity of the heat absorption layer to light of the preset wave band is larger than that of the dielectric layer to the light of the preset wave band. According to the semiconductor device provided by the embodiment of the invention, the problem of non-uniform heat distribution in the thickness direction during laser cutting in the process of manufacturing the semiconductor device can be relieved, so that the problem of cutting thermal damage to the edge of the semiconductor device is relieved.