10results about How to "Increase absorbance" patented technology

The utility model provides a battery assembly and a photovoltaic system. The battery assembly comprises a plurality of battery strings which are sequentially arranged in the first direction, each battery string comprises a plurality of battery pieces which are sequentially arranged in the second direction, and the first direction intersects with the second direction; the plurality of battery strings comprise a first battery string, a second battery string and a third battery string which are sequentially arranged along the first direction, and two ends of the second battery string in the first direction are respectively overlapped with the same sides of the first battery string and the third battery string. According to the battery assembly provided by the embodiment of the utility model, the two ends of the second battery string in the first direction are respectively overlapped with the same side of the first battery string and the third battery string, so that the string distance between the adjacent battery strings can be eliminated, and sunlight cannot penetrate out from the interval between the adjacent battery strings; the light absorption rate of the battery assembly can be improved, and the efficiency of the battery assembly is improved.

The application belongs to the field of organic photovoltaics, and relates to a kind of polymer photovoltaic material and its preparation method and application. Double bromide compound A and double side tin compound B are subjected to Stille cross coupling reaction under the action of palladium catalyst, and the polymer photovoltaic material is obtained. The polymer photovoltaic material prepared by the application has an ultra-wide absorption spectrum range from 300 nm to 1200 nm. Such material exhibits an ultra-wide spectral range and a high extinction coefficient, and embodies excellent light absorption capacity. The strong light absorption capacity of the polymer photovoltaic material prepared by the application will help to improve the device efficiency of organic photovoltaics and improve the energy conversion efficiency of the device. The polymer photovoltaic material prepared by the application provides reference value for the design of functional materials in many fields of organic photoelectricity and solar energy utilization and conversion.

The present invention provides a protective film agent and a method for processing a workpiece, the protective film agent being capable of forming a protective film suitable for processing with a laser beam. The protective film agent is coated on a workpiece when the workpiece is processed, the protective film agent comprising: a water-soluble resin; a light absorber having a flavone structure, a flavonol structure, or an isoflavone structure; and a solvent that dissolves the resin and the light absorber.

The invention relates to the technical field of semiconductor devices, and discloses a semiconductor device, a wafer and a wafer processing method. The semiconductor device includes: a substrate; an epitaxial layer; an ohmic contact layer; the device electrode layer is located on the side, away from the substrate, of the ohmic contact layer; the at least one interconnection layer is electrically connected with the device electrode layer in the device area and located on the side, away from the substrate, of the device electrode layer, and the at least one interconnection layer comprises a top interconnection layer farthest away from the substrate; the dielectric layer is located between the top interconnection layer and the device electrode layer; the heat absorption layer is located on the side, away from the substrate, of the dielectric layer, the heat absorption layer is at least located in the cutting edge area, and the absorptivity of the heat absorption layer to light of the preset wave band is larger than that of the dielectric layer to the light of the preset wave band. According to the semiconductor device provided by the embodiment of the invention, the problem of non-uniform heat distribution in the thickness direction during laser cutting in the process of manufacturing the semiconductor device can be relieved, so that the problem of cutting thermal damage to the edge of the semiconductor device is relieved.

The invention belongs to the technical field of photo-thermal conversion materials, and particularly relates to a solar photo-thermal conversion material, a preparation method and application, the material comprises 2-5 parts of biomass, 2-10 parts of copper chloride, 5-10 parts of nano ceramic particles, 5-20 parts of 3-aminopropyltriethoxysilane, 10-20 parts of hydroxypropyl methyl cellulose, and 5-20 parts of felt cloth. Compared with the prior art, the solar photo-thermal conversion material, the preparation method and the application provided by the invention have the advantages that light reflection can be effectively inhibited, and the absorbance is improved; in addition, the biomass is enhanced through the kaolin nano ceramic particles, and the photothermal conversion efficiency can still be kept at a high level under the condition that the solar illumination intensity is increased.

This invention belongs to the field of photochromic nanomaterials, and relates to tungsten oxide nanoparticles, a gel electrolyte, their preparation method, and applications. It provides hydrated tungsten oxide prepared by a chemical reaction in solution without drying. The hydrated tungsten oxide is added to water and dispersed evenly, then ethylene glycol is added, making the volume ratio of water to ethylene glycol 2–10:4–10. After sealing, the mixture is heated to 70–110°C and reacted for 15–45 min to obtain the final product. The dispersion concentration after the reaction is 0.5–8 mg / mL. The tungsten oxide nanoparticles prepared by this invention exhibit photochromic properties, and the preparation method is simple, low-cost, and environmentally friendly.

The invention discloses a battery piece and a photovoltaic module. The battery piece comprises a substrate, and the surface of the substrate is provided with an N-type doped layer, a P-type doped layer and an isolation region arranged between the N-type doped layer and the P-type doped layer; the N-type doping layer and the P-type doping layer are arranged in an interdigital manner, each of the N-type doping layer and the P-type doping layer comprises a main body part and a finger-shaped part, the main body parts extend along a first direction, and the finger-shaped parts are arranged on at least one side of the main body parts along a second direction; the finger-shaped part is provided with a current collection electrode extending along a second direction; the first insulating layer is arranged at the position, close to the main body part of the opposite conductive type, of the finger-shaped part; the first insulating layer covers the end portion of the collector electrode, and the first insulating layer and the adjacent isolation region are arranged at an interval in the second direction. The first insulating layer is utilized to play an insulating and isolating role, meanwhile, the shielding area of the first insulating layer on the surface of the substrate is reduced, and the problem of poor local connection of the interconnector caused by the fact that the interconnector is heightened due to the fact that the first insulating layer partially extends below the interconnector can also be avoided.

The application discloses an application of a self-driven perovskite photoelectric detector in a visible light photosensitive chip. The self-driven perovskite photoelectric detector comprises electrodes, a first charge transport layer, a second charge transport layer and a perovskite layer; wherein the perovskite layer is a thin film in an interdigital structure formed by low-dimensional and three-dimensional perovskite, and the low-dimensional perovskite is any one or a combination of zero-dimensional, one-dimensional and two-dimensional; the first charge transport layer is one or a combination of a hole transport layer and an electron blocking layer, and the second charge transport layer is one or a combination of an electron transport layer and a hole blocking layer; or the first charge transport layer is one or a combination of an electron transport layer and a hole blocking layer, and the second charge transport layer is one or a combination of an electron transport layer or a hole blocking layer. The perovskite photoelectric detector solves the problem that the application of the existing silicon-based and perovskite visible light detectors is limited due to the insufficient visible light detection performance.

The present application relates to the field of photothermal materials, discloses a kind of photothermal coating preparation photothermal material composition and its application and photothermal composite film and its preparation method and application, the photothermal material composition contains chitosan, hydrophilic photothermal component and optional auxiliary, wherein, the content weight ratio of the chitosan, the hydrophilic photothermal component and optional auxiliary is 1:0.1-15:0-5, the photothermal composite film prepared by the photothermal material composition provided by the present application is strong, has higher light absorption rate, photothermal conversion efficiency and driving water evaporation rate.

The application discloses a green sulfuric acid concentration method based on solar interface evaporation, which comprises the following steps: (1) SiC mixed powder preparation; (2) 3D printing of an evaporator blank; (3) vacuum impregnation of SiO2 slurry; (4) high-temperature sintering to optimize performance; and (5) solar-driven sulfuric acid concentration. The application forms a uniform SiO2 layer on the surface of the evaporator through vacuum impregnation of SiO2 slurry and high-temperature crystalline transformation, the hydroxyl groups of SiO2 endow the evaporator with superhydrophilicity, and ensure the rapid transmission of sulfuric acid; meanwhile, SiC and SiO2 both have excellent sulfuric acid corrosion resistance, and the synergistic effect of the two makes the evaporator maintain structural integrity and stable performance after being soaked in 18.4 mol / L concentrated sulfuric acid for 3600 hours; then, the above-mentioned evaporator is used to concentrate sulfuric acid, and solar energy is used as the only energy source, without additional consumption of fossil energy or electric energy, so that the operation cost is low, and the application is suitable for industrial application.